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CYW54591RKUBGT CYW54591RKUBGT Infineon Technologies Description: Automotive WiFi/Bluetooth
Packaging: Tape & Reel (TR)
Package / Case: 194-UFBGA, WLBGA
Sensitivity: -98.8dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 896kB RAM, 896kB ROM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 4.8V
Power - Output: 21dBm
Protocol: 802.11a/b/g/-c, Bluetooth v5.0
Data Rate (Max): 433.3Mbps
Supplier Device Package: 194-WLBGA (5.16x7.7)
Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+527.08 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CYW54591RKUBGT CYW54591RKUBGT Infineon Technologies Description: Automotive WiFi/Bluetooth
Packaging: Cut Tape (CT)
Package / Case: 194-UFBGA, WLBGA
Sensitivity: -98.8dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 896kB RAM, 896kB ROM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 4.8V
Power - Output: 21dBm
Protocol: 802.11a/b/g/-c, Bluetooth v5.0
Data Rate (Max): 433.3Mbps
Supplier Device Package: 194-WLBGA (5.16x7.7)
Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1+892.33 грн
10+777.71 грн
25+716.33 грн
100+614.61 грн
250+576.20 грн
500+537.79 грн
1000+502.52 грн
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TC223L16F133NACLXUMA1 TC223L16F133NACLXUMA1 Infineon Technologies Power_Sensing_Selection_Guide_2021.pdf Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
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SAK-TC297TP-128F300N BC SAK-TC297TP-128F300N BC Infineon Technologies Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 768K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
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TC297TP128F300SBBKXUMA2 TC297TP128F300SBBKXUMA2 Infineon Technologies Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 72x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
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TC297TP128F300SBCKXUMA1 TC297TP128F300SBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Discontinued at Digi-Key
Number of I/O: 169
DigiKey Programmable: Not Verified
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FS10R06VL4_B2 Infineon Technologies INFNS20560-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1-1
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
24+1043.37 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
SCREWCLAMPEASY750GEXOXA1 SCREWCLAMPEASY750GEXOXA1 Infineon Technologies Infineon-Clamp%20Easy750GEO%20-ATI-v02_05-EN.pdf?fileId=5546d462525dbac401532bcb2a50704d Description: EASY ACCESSORY
Packaging: Tray
Type: Mount
Part Status: Active
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
5+77.01 грн
10+53.28 грн
25+48.07 грн
200+37.76 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPB023N04NF2SATMA1 IPB023N04NF2SATMA1 Infineon Technologies Infineon-IPB023N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12c45d6afa Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
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IPB023N04NF2SATMA1 IPB023N04NF2SATMA1 Infineon Technologies Infineon-IPB023N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12c45d6afa Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
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IRFI4410ZPBF IRFI4410ZPBF Infineon Technologies irfi4410zpbf.pdf?fileId=5546d462533600a4015356242aab1f86 Description: MOSFET N-CH 100V 43A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 26A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
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S29GL128S10FHI010 S29GL128S10FHI010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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CYBT-483056-02 CYBT-483056-02 Infineon Technologies Infineon-CYBT-483056-02_CYBT-483062-02_EZ-BT_XR_WICED_Module-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c8b972a8 Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 811 шт:
термін постачання 21-31 дні (днів)
1+1361.52 грн
10+1027.70 грн
25+942.80 грн
100+787.06 грн
250+735.27 грн
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CYBT-423054-02 CYBT-423054-02 Infineon Technologies Infineon-CYBT-423054-02_CYBT-423060-02_EZ-BT_WICED_Module-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9d97472bd Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 373 шт:
термін постачання 21-31 дні (днів)
1+1125.74 грн
10+847.28 грн
25+776.26 грн
100+646.62 грн
250+603.19 грн
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CYBT-423054-EVAL CYBT-423054-EVAL Infineon Technologies Infineon-EZ-BT_Module_Arduino_Evaluation_Board_CYBT-423054-EVAL-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0322651a5b Description: CYBT-423054-EVAL
Packaging: Tray
Part Status: Active
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
For Use With/Related Products: CYBT-423054-02
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+3717.80 грн
В кошику  од. на суму  грн.
CYBT-483056-EVAL CYBT-483056-EVAL Infineon Technologies Infineon-EZ-BT_Module_Arduino_Evaluation_Board_CYBT-483056-EVAL-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f032d171a6f Description: CYBT-483056-EVAL
Packaging: Tray
Part Status: Active
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
For Use With/Related Products: CYBT-483056-02
Contents: Board(s)
Utilized IC / Part: CYBT-483056-02
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+3689.22 грн
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CY9BF429SPMC-GK7E1 CY9BF429SPMC-GK7E1 Infineon Technologies Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32B 1.5625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 122
DigiKey Programmable: Not Verified
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CY9BF429TABGL-GK7E1 CY9BF429TABGL-GK7E1 Infineon Technologies Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32B 1.5625MB FLSH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
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CY9BF418TBGL-GK7E1 CY9BF418TBGL-GK7E1 Infineon Technologies Infineon-CY9B410T_Series_32_bit_ARM_Cortex_-M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0cae76684&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
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CY9BF428TABGL-GK7E1 CY9BF428TABGL-GK7E1 Infineon Technologies Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32B 1.0625MB FLSH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
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S29GL128S10FHB010 S29GL128S10FHB010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10FAIV23 S29GL128S10FAIV23 Infineon Technologies S29GL-S_PbPkg.pdf Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10GHIV20 S29GL128S10GHIV20 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 56FBGA
Packaging: Tray
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
на замовлення 2635 шт:
термін постачання 21-31 дні (днів)
1+411.24 грн
10+361.07 грн
25+354.17 грн
40+329.99 грн
80+296.11 грн
260+294.99 грн
520+271.94 грн
1040+260.47 грн
В кошику  од. на суму  грн.
S29GL128S10FHB013 S29GL128S10FHB013 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10FAIV13 S29GL128S10FAIV13 Infineon Technologies S29GL-S_PbPkg.pdf Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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S29GL128S10FHSS10 S29GL128S10FHSS10 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10FHIV13 S29GL128S10FHIV13 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10FHIV23 S29GL128S10FHIV23 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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XMC4100F64K128BAXQMA1 XMC4100F64K128BAXQMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
1+484.27 грн
10+361.30 грн
25+335.15 грн
160+295.55 грн
В кошику  од. на суму  грн.
IRFB3306PBF IRFB3306PBF Infineon Technologies irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165 Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
на замовлення 3764 шт:
термін постачання 21-31 дні (днів)
3+150.84 грн
50+72.60 грн
100+65.65 грн
500+56.03 грн
1000+52.76 грн
2000+51.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY62146ELL-45ZSXIT CY62146ELL-45ZSXIT Infineon Technologies Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270 Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY62146ELL-45ZSXIT CY62146ELL-45ZSXIT Infineon Technologies Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270 Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
1+843.11 грн
10+720.15 грн
25+686.72 грн
50+621.66 грн
100+599.66 грн
250+571.74 грн
500+542.41 грн
В кошику  од. на суму  грн.
IPAW60R280P7SE8228XKSA1 IPAW60R280P7SE8228XKSA1 Infineon Technologies Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R600P7SE8228XKSA1 IPAW60R600P7SE8228XKSA1 Infineon Technologies Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
товару немає в наявності
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IPAW60R360P7SE8228XKSA1 IPAW60R360P7SE8228XKSA1 Infineon Technologies Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
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KP226N3622XTMA1 KP226N3622XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+243.55 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
KP226N3622XTMA1 KP226N3622XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+504.12 грн
10+363.90 грн
25+323.47 грн
50+288.40 грн
100+280.81 грн
500+235.27 грн
В кошику  од. на суму  грн.
IRFP4332PBF IRFP4332PBF Infineon Technologies irfp4332pbf.pdf?fileId=5546d462533600a40153562c58682013 description Description: MOSFET N-CH 250V 57A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
1+348.52 грн
25+212.80 грн
100+175.63 грн
В кошику  од. на суму  грн.
IPA65R400CEXKSA1 IPA65R400CEXKSA1 Infineon Technologies Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493 Description: MOSFET N-CH 650V TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
3+115.11 грн
50+88.76 грн
100+70.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA50R280CEXKSA2 IPA50R280CEXKSA2 Infineon Technologies DS_IPA50R280CE_2_2.pdf?fileId=5546d4614815da880148594e0dbc1751 Description: MOSFET N-CH 500V 7.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 30.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
3+146.87 грн
10+90.52 грн
100+61.33 грн
500+45.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ACCESSORY34362NOSA1 Infineon Technologies Description: ACCESSORY 34362NOSA1
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IDW40E65D2FKSA1 IDW40E65D2FKSA1 Infineon Technologies DS_IDW40E65D2_1_2.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433d68e984013d8226e10d7547 Description: DIODE GP 650V 80A TO247-3-1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 2289 шт:
термін постачання 21-31 дні (днів)
2+269.13 грн
30+141.28 грн
120+115.23 грн
510+90.20 грн
1020+83.65 грн
2010+79.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDP12E120XKSA1 IDP12E120XKSA1 Infineon Technologies IDP12E120_v2_3G[1].pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30432313ff5e012374c3dade485b Description: DIODE STD 1200V 28A PGTO22022
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 28A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
2+174.66 грн
50+91.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDP30E65D2XKSA1 IDP30E65D2XKSA1 Infineon Technologies Infineon-IDP30E65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4ef86e3ec2 Description: DIODE GP 650V 60A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
2+179.42 грн
50+84.26 грн
100+75.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFBL3703 IRFBL3703 Infineon Technologies irfbl3703.pdf Description: MOSFET N-CH 30V 260A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 76A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Super D2-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
товару немає в наявності
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FF400R07KE4HOSA1 FF400R07KE4HOSA1 Infineon Technologies Infineon-FF400R07KE4-DS-v03_00-en_de.pdf?fileId=db3a30432d081e66012d097a5c6d001d Description: IGBT MODULE 650V 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+7874.62 грн
10+6357.87 грн
В кошику  од. на суму  грн.
FF200R17KE3HOSA1 FF200R17KE3HOSA1 Infineon Technologies Infineon-FF200R17KE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b42fcc6c4d9c Description: IGBT MOD 1700V 310A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+10595.28 грн
10+9038.47 грн
В кошику  од. на суму  грн.
BFP420H6801XTSA1 BFP420H6801XTSA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+12.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BFP420H6801XTSA1 BFP420H6801XTSA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 8825 шт:
термін постачання 21-31 дні (днів)
10+33.34 грн
14+22.48 грн
25+20.06 грн
100+16.32 грн
250+15.13 грн
500+14.41 грн
1000+13.59 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
D711N65TXPSA1 D711N65TXPSA1 Infineon Technologies Infineon-D711N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b42f99154c5f Description: DIODE STANDARD 6500V 1070A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 6500 V
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS11TFV023 S29GL01GS11TFV023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
TLE4997A8DE0300XUMA1 TLE4997A8DE0300XUMA1 Infineon Technologies Infineon-TLE4997A8D_DS-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015bc87f823f319f Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+211.18 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IKP39N65ES5XKSA1 IKP39N65ES5XKSA1 Infineon Technologies Infineon-IKP39N65ES5-DS-v02_01-EN.pdf?fileId=5546d462696dbf1201697b7740f4442c Description: IGBT TRENCH FS 650V 62A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 39A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/120ns
Switching Energy: 800µJ (on), 500µJ (off)
Test Condition: 400V, 39A, 12.8Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+320.73 грн
50+158.72 грн
100+144.15 грн
500+111.34 грн
В кошику  од. на суму  грн.
IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 Infineon Technologies Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914 Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
на замовлення 875 шт:
термін постачання 21-31 дні (днів)
2+250.87 грн
10+157.71 грн
100+109.85 грн
500+89.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R060P7XKSA1 IPA60R060P7XKSA1 Infineon Technologies Infineon-IPA60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b195511da49e8 Description: MOSFET N-CHANNEL 600V 48A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
1+406.47 грн
50+209.75 грн
100+199.03 грн
В кошику  од. на суму  грн.
IPP60R070CFD7XKSA1 IPP60R070CFD7XKSA1 Infineon Technologies Infineon-IPP60R070CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3e1505931e0 Description: MOSFET N-CH 650V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
на замовлення 680 шт:
термін постачання 21-31 дні (днів)
1+466.81 грн
50+238.37 грн
100+218.02 грн
500+172.29 грн
В кошику  од. на суму  грн.
IPP60R125P6XKSA1 IPP60R125P6XKSA1 Infineon Technologies Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f Description: MOSFET N-CH 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R160C6XKSA1 IPP60R160C6XKSA1 Infineon Technologies IPP60R160C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc20123f06a60d340d2 Description: MOSFET N-CH 600V 23.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
2+300.89 грн
50+148.30 грн
100+134.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S29AL016J55TFIR10 S29AL016J55TFIR10 Infineon Technologies Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 467 шт:
термін постачання 21-31 дні (днів)
2+227.85 грн
10+204.58 грн
25+198.61 грн
96+178.07 грн
192+173.80 грн
288+171.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S29GL128P90FFIR10 S29GL128P90FFIR10 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
на замовлення 515 шт:
термін постачання 21-31 дні (днів)
1+469.19 грн
10+420.47 грн
25+407.72 грн
50+373.62 грн
180+357.01 грн
360+348.15 грн
В кошику  од. на суму  грн.
CYW54591RKUBGT
CYW54591RKUBGT
Виробник: Infineon Technologies
Description: Automotive WiFi/Bluetooth
Packaging: Tape & Reel (TR)
Package / Case: 194-UFBGA, WLBGA
Sensitivity: -98.8dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 896kB RAM, 896kB ROM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 4.8V
Power - Output: 21dBm
Protocol: 802.11a/b/g/-c, Bluetooth v5.0
Data Rate (Max): 433.3Mbps
Supplier Device Package: 194-WLBGA (5.16x7.7)
Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+527.08 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CYW54591RKUBGT
CYW54591RKUBGT
Виробник: Infineon Technologies
Description: Automotive WiFi/Bluetooth
Packaging: Cut Tape (CT)
Package / Case: 194-UFBGA, WLBGA
Sensitivity: -98.8dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 896kB RAM, 896kB ROM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 4.8V
Power - Output: 21dBm
Protocol: 802.11a/b/g/-c, Bluetooth v5.0
Data Rate (Max): 433.3Mbps
Supplier Device Package: 194-WLBGA (5.16x7.7)
Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+892.33 грн
10+777.71 грн
25+716.33 грн
100+614.61 грн
250+576.20 грн
500+537.79 грн
1000+502.52 грн
В кошику  од. на суму  грн.
TC223L16F133NACLXUMA1 Power_Sensing_Selection_Guide_2021.pdf
TC223L16F133NACLXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
товару немає в наявності
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SAK-TC297TP-128F300N BC Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
SAK-TC297TP-128F300N BC
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 768K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
товару немає в наявності
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TC297TP128F300SBBKXUMA2
TC297TP128F300SBBKXUMA2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 72x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
товару немає в наявності
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TC297TP128F300SBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC297TP128F300SBCKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Discontinued at Digi-Key
Number of I/O: 169
DigiKey Programmable: Not Verified
товару немає в наявності
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FS10R06VL4_B2 INFNS20560-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1-1
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+1043.37 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
SCREWCLAMPEASY750GEXOXA1 Infineon-Clamp%20Easy750GEO%20-ATI-v02_05-EN.pdf?fileId=5546d462525dbac401532bcb2a50704d
SCREWCLAMPEASY750GEXOXA1
Виробник: Infineon Technologies
Description: EASY ACCESSORY
Packaging: Tray
Type: Mount
Part Status: Active
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.01 грн
10+53.28 грн
25+48.07 грн
200+37.76 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPB023N04NF2SATMA1 Infineon-IPB023N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12c45d6afa
IPB023N04NF2SATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
товару немає в наявності
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IPB023N04NF2SATMA1 Infineon-IPB023N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12c45d6afa
IPB023N04NF2SATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
товару немає в наявності
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IRFI4410ZPBF irfi4410zpbf.pdf?fileId=5546d462533600a4015356242aab1f86
IRFI4410ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 43A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 26A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
товару немає в наявності
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S29GL128S10FHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10FHI010
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYBT-483056-02 Infineon-CYBT-483056-02_CYBT-483062-02_EZ-BT_XR_WICED_Module-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c8b972a8
CYBT-483056-02
Виробник: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 811 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1361.52 грн
10+1027.70 грн
25+942.80 грн
100+787.06 грн
250+735.27 грн
В кошику  од. на суму  грн.
CYBT-423054-02 Infineon-CYBT-423054-02_CYBT-423060-02_EZ-BT_WICED_Module-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9d97472bd
CYBT-423054-02
Виробник: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 373 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1125.74 грн
10+847.28 грн
25+776.26 грн
100+646.62 грн
250+603.19 грн
В кошику  од. на суму  грн.
CYBT-423054-EVAL Infineon-EZ-BT_Module_Arduino_Evaluation_Board_CYBT-423054-EVAL-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0322651a5b
CYBT-423054-EVAL
Виробник: Infineon Technologies
Description: CYBT-423054-EVAL
Packaging: Tray
Part Status: Active
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
For Use With/Related Products: CYBT-423054-02
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3717.80 грн
В кошику  од. на суму  грн.
CYBT-483056-EVAL Infineon-EZ-BT_Module_Arduino_Evaluation_Board_CYBT-483056-EVAL-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f032d171a6f
CYBT-483056-EVAL
Виробник: Infineon Technologies
Description: CYBT-483056-EVAL
Packaging: Tray
Part Status: Active
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
For Use With/Related Products: CYBT-483056-02
Contents: Board(s)
Utilized IC / Part: CYBT-483056-02
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3689.22 грн
В кошику  од. на суму  грн.
CY9BF429SPMC-GK7E1 Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF429SPMC-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32B 1.5625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 122
DigiKey Programmable: Not Verified
товару немає в наявності
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CY9BF429TABGL-GK7E1 Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF429TABGL-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32B 1.5625MB FLSH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF418TBGL-GK7E1 Infineon-CY9B410T_Series_32_bit_ARM_Cortex_-M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0cae76684&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF418TBGL-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
товару немає в наявності
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CY9BF428TABGL-GK7E1 Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF428TABGL-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
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S29GL128S10FHB010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10FHB010
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL128S10FAIV23 S29GL-S_PbPkg.pdf
S29GL128S10FAIV23
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10GHIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10GHIV20
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56FBGA
Packaging: Tray
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
на замовлення 2635 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+411.24 грн
10+361.07 грн
25+354.17 грн
40+329.99 грн
80+296.11 грн
260+294.99 грн
520+271.94 грн
1040+260.47 грн
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S29GL128S10FHB013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10FHB013
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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S29GL128S10FAIV13 S29GL-S_PbPkg.pdf
S29GL128S10FAIV13
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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S29GL128S10FHSS10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
S29GL128S10FHSS10
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL128S10FHIV13 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10FHIV13
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL128S10FHIV23 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10FHIV23
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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XMC4100F64K128BAXQMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4100F64K128BAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+484.27 грн
10+361.30 грн
25+335.15 грн
160+295.55 грн
В кошику  од. на суму  грн.
IRFB3306PBF irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165
IRFB3306PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
на замовлення 3764 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.84 грн
50+72.60 грн
100+65.65 грн
500+56.03 грн
1000+52.76 грн
2000+51.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY62146ELL-45ZSXIT Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270
CY62146ELL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY62146ELL-45ZSXIT Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270
CY62146ELL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+843.11 грн
10+720.15 грн
25+686.72 грн
50+621.66 грн
100+599.66 грн
250+571.74 грн
500+542.41 грн
В кошику  од. на суму  грн.
IPAW60R280P7SE8228XKSA1
IPAW60R280P7SE8228XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R600P7SE8228XKSA1
IPAW60R600P7SE8228XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R360P7SE8228XKSA1
IPAW60R360P7SE8228XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
KP226N3622XTMA1 fundamentals-of-power-semiconductors
KP226N3622XTMA1
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+243.55 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
KP226N3622XTMA1 fundamentals-of-power-semiconductors
KP226N3622XTMA1
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+504.12 грн
10+363.90 грн
25+323.47 грн
50+288.40 грн
100+280.81 грн
500+235.27 грн
В кошику  од. на суму  грн.
IRFP4332PBF description irfp4332pbf.pdf?fileId=5546d462533600a40153562c58682013
IRFP4332PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 57A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+348.52 грн
25+212.80 грн
100+175.63 грн
В кошику  од. на суму  грн.
IPA65R400CEXKSA1 Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493
IPA65R400CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.11 грн
50+88.76 грн
100+70.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA50R280CEXKSA2 DS_IPA50R280CE_2_2.pdf?fileId=5546d4614815da880148594e0dbc1751
IPA50R280CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 30.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.87 грн
10+90.52 грн
100+61.33 грн
500+45.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ACCESSORY34362NOSA1
Виробник: Infineon Technologies
Description: ACCESSORY 34362NOSA1
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IDW40E65D2FKSA1 DS_IDW40E65D2_1_2.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433d68e984013d8226e10d7547
IDW40E65D2FKSA1
Виробник: Infineon Technologies
Description: DIODE GP 650V 80A TO247-3-1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 2289 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+269.13 грн
30+141.28 грн
120+115.23 грн
510+90.20 грн
1020+83.65 грн
2010+79.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDP12E120XKSA1 IDP12E120_v2_3G[1].pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30432313ff5e012374c3dade485b
IDP12E120XKSA1
Виробник: Infineon Technologies
Description: DIODE STD 1200V 28A PGTO22022
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 28A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.66 грн
50+91.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDP30E65D2XKSA1 Infineon-IDP30E65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4ef86e3ec2
IDP30E65D2XKSA1
Виробник: Infineon Technologies
Description: DIODE GP 650V 60A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+179.42 грн
50+84.26 грн
100+75.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFBL3703 irfbl3703.pdf
IRFBL3703
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 260A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 76A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Super D2-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FF400R07KE4HOSA1 Infineon-FF400R07KE4-DS-v03_00-en_de.pdf?fileId=db3a30432d081e66012d097a5c6d001d
FF400R07KE4HOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 650V 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7874.62 грн
10+6357.87 грн
В кошику  од. на суму  грн.
FF200R17KE3HOSA1 Infineon-FF200R17KE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b42fcc6c4d9c
FF200R17KE3HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 310A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10595.28 грн
10+9038.47 грн
В кошику  од. на суму  грн.
BFP420H6801XTSA1 BFP420_Rev2013.pdf
BFP420H6801XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BFP420H6801XTSA1 BFP420_Rev2013.pdf
BFP420H6801XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 8825 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.34 грн
14+22.48 грн
25+20.06 грн
100+16.32 грн
250+15.13 грн
500+14.41 грн
1000+13.59 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
D711N65TXPSA1 Infineon-D711N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b42f99154c5f
D711N65TXPSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 6500V 1070A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 6500 V
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS11TFV023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11TFV023
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
TLE4997A8DE0300XUMA1 Infineon-TLE4997A8D_DS-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015bc87f823f319f
TLE4997A8DE0300XUMA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+211.18 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IKP39N65ES5XKSA1 Infineon-IKP39N65ES5-DS-v02_01-EN.pdf?fileId=5546d462696dbf1201697b7740f4442c
IKP39N65ES5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 62A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 39A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/120ns
Switching Energy: 800µJ (on), 500µJ (off)
Test Condition: 400V, 39A, 12.8Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+320.73 грн
50+158.72 грн
100+144.15 грн
500+111.34 грн
В кошику  од. на суму  грн.
IKB15N65EH5ATMA1 Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914
IKB15N65EH5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
на замовлення 875 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+250.87 грн
10+157.71 грн
100+109.85 грн
500+89.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R060P7XKSA1 Infineon-IPA60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b195511da49e8
IPA60R060P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 600V 48A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+406.47 грн
50+209.75 грн
100+199.03 грн
В кошику  од. на суму  грн.
IPP60R070CFD7XKSA1 Infineon-IPP60R070CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3e1505931e0
IPP60R070CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
на замовлення 680 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+466.81 грн
50+238.37 грн
100+218.02 грн
500+172.29 грн
В кошику  од. на суму  грн.
IPP60R125P6XKSA1 Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f
IPP60R125P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R160C6XKSA1 IPP60R160C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc20123f06a60d340d2
IPP60R160C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+300.89 грн
50+148.30 грн
100+134.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S29AL016J55TFIR10 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
S29AL016J55TFIR10
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 467 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+227.85 грн
10+204.58 грн
25+198.61 грн
96+178.07 грн
192+173.80 грн
288+171.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S29GL128P90FFIR10 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FFIR10
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
на замовлення 515 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+469.19 грн
10+420.47 грн
25+407.72 грн
50+373.62 грн
180+357.01 грн
360+348.15 грн
В кошику  од. на суму  грн.
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