| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||
|---|---|---|---|---|---|---|---|---|---|
 |
IS25LP016D-JNLA3-TR | ISSI |
 Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
товар відсутній |
|||||
| IS25LP016D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
товар відсутній |
||||||
| IS25LP01G-RILA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; LFBGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: LFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
товар відсутній |
||||||
| IS25LP01G-RILE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; LFBGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: LFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
товар відсутній |
||||||
|
|
IS25LP020E-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 2Mb FLASH Interface: QPI; SPI Operating frequency: 104MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
товар відсутній |
|||||
|
|
IS25LP020E-JNLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 2Mb FLASH Interface: QPI; SPI Operating frequency: 104MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
товар відсутній |
|||||
| IS25LP020E-JYLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 2Mb FLASH Interface: QPI; SPI Operating frequency: 104MHz Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
товар відсутній |
||||||
| IS43TR16128DL-107MBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.91ns; TWBGA96; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Clock frequency: 1066MHz Access time: 13.91ns Case: TWBGA96 Memory capacity: 2Gb Mounting: SMD Operating temperature: 0...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
товар відсутній |
||||||
| IS43TR16128DL-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1066MHz; 13.91ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.91ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Operating temperature: -40...95°C Case: TWBGA96 |
товар відсутній |
||||||
| IS43DR82560C-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Memory: 2Gb DRAM Operating temperature: 0...85°C Kind of package: in-tray; tube Access time: 5ns Memory organisation: 32Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR82560C-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Memory: 2Gb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 5ns Memory organisation: 32Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR82560C-3DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C Mounting: SMD Case: TWBGA60 Operating temperature: 0...85°C Type of integrated circuit: DRAM memory Clock frequency: 333MHz Memory: 2Gb DRAM Kind of interface: parallel Memory organisation: 32Mx8bitx8 Kind of package: in-tray; tube Kind of memory: DDR2; SDRAM Supply voltage: 1.7...1.9V DC Access time: 5ns |
товар відсутній |
||||||
| IS43TR82560D-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 256Mx8bit Clock frequency: 1066MHz Access time: 13.75ns Case: TWBGA78 Memory capacity: 2Gb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.5V DC |
товар відсутній |
||||||
| IS43TR82560D-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C Mounting: SMD Operating temperature: -40...95°C Kind of package: reel; tape Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Kind of interface: parallel Memory capacity: 2Gb Clock frequency: 1066MHz Supply voltage: 1.5V DC Access time: 13.75ns Memory organisation: 256Mx8bit Case: TWBGA78 |
товар відсутній |
||||||
| IS43TR82560DL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx8bit Clock frequency: 1066MHz Access time: 13.75ns Case: TWBGA78 Memory capacity: 2Gb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
товар відсутній |
||||||
| IS43TR82560DL-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx8bit Clock frequency: 1066MHz Access time: 13.75ns Case: TWBGA78 Memory capacity: 2Gb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.35V DC |
товар відсутній |
||||||
| IS61DDB21M18C-250M3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V |
товар відсутній |
||||||
| IS61DDB22M18C-250M3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V |
товар відсутній |
||||||
| IS61DDB24M18A-250M3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V |
товар відсутній |
||||||
| IS61QDB21M18A-250B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.8V |
товар відсутній |
||||||
| IS61QDB24M18A-250B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.8V |
товар відсутній |
||||||
| IS64WV2568EDBLL-10BLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: TFBGA36 Mounting: SMD Operating temperature: -40...125°C Kind of interface: parallel Operating voltage: 2.4...3.6V Kind of package: in-tray; tube Access time: 10ns |
товар відсутній |
||||||
| IS61WV2568EDBLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.4...3.6V Kind of package: in-tray; tube Access time: 10ns |
товар відсутній |
||||||
| IS61WV2568EDBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.4...3.6V Kind of package: reel; tape Access time: 10ns |
товар відсутній |
||||||
| IS64WV2568EDBLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: TSOP44 II Mounting: SMD Operating temperature: -40...125°C Kind of interface: parallel Operating voltage: 2.4...3.6V Kind of package: in-tray; tube Access time: 10ns |
товар відсутній |
||||||
| IS64WV25616EDBLL-10BLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
товар відсутній |
||||||
| IS64WV25616EDBLL-10BLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
товар відсутній |
||||||
| IS61WV25616EDBLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
товар відсутній |
||||||
| IS61WV25616EDBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
товар відсутній |
||||||
| IS64WV25616EDBLL-10CTLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Memory capacity: 4Mb Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
товар відсутній |
||||||
| IS64WV25616EDBLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Memory capacity: 4Mb Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
товар відсутній |
||||||
| IS61WV25616EDBLL-8BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 8ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
товар відсутній |
||||||
| IS61WV25616EDBLL-8BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 8ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V |
товар відсутній |
||||||
| IS61WV2568EDBLL-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: SOJ36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.4...3.6V Access time: 10ns |
товар відсутній |
||||||
 |
IS61WV2568EDBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.4...3.6V Access time: 10ns |
товар відсутній |
|||||
| IS61WV2568EDBLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.4...3.6V Access time: 10ns |
товар відсутній |
||||||
| IS61WV25616EDBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
товар відсутній |
||||||
 |
IS61WV25616EDBLL-8TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 8ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
|
||||
| IS43DR16128C-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 2Gb DRAM Operating temperature: -40...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 16Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR16160B-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 256Mb DRAM Operating temperature: -40...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 4Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR16320E-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 512Mb DRAM Operating temperature: -40...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 8Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR16640C-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 1Gb DRAM Operating temperature: -40...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 8Mx16bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR81280C-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Memory: 1Gb DRAM Operating temperature: -40...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 16Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR86400E-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 12.5ns Clock frequency: 400MHz Kind of package: reel; tape |
товар відсутній |
||||||
| IS46DR16160B-25DBLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 400MHz Access time: 12.5ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
товар відсутній |
||||||
| IS46DR16320E-25DBLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 400MHz Access time: 12.5ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
товар відсутній |
||||||
| IS46DR16640C-25DBLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 8Mx16bitx8 Clock frequency: 400MHz Access time: 12.5ns Case: TWBGA84 Memory capacity: 1Gb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
товар відсутній |
||||||
| IS43DR16128C-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 2Gb DRAM Operating temperature: 0...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 16Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR16128C-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 2Gb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 16Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR16160B-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 256Mb DRAM Operating temperature: 0...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 4Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR16160B-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 256Mb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 4Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR16160B-25DBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 256Mb DRAM Operating temperature: 0...85°C Kind of package: reel; tape Access time: 12.5ns Memory organisation: 4Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR16320E-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 512Mb DRAM Operating temperature: 0...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 8Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR16320E-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 512Mb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 8Mx16bitx4 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR16640C-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 1Gb DRAM Operating temperature: 0...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 8Mx16bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR16640C-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA84 Supply voltage: 1.7...1.9V DC Memory: 1Gb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 8Mx16bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR81280C-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Memory: 1Gb DRAM Operating temperature: 0...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 16Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR81280C-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Memory: 1Gb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 12.5ns Memory organisation: 16Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
товар відсутній |
||||||
| IS43DR86400E-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray; tube |
товар відсутній |
||||||
| IS43DR86400E-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray; tube |
товар відсутній |
| IS25LP016D-JNLA3-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP016D-JULE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP01G-RILA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; LFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: LFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; LFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: LFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP01G-RILE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; LFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: LFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; LFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: LFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP020E-JNLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 2Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 2Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP020E-JNLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 2Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 2Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP020E-JYLA3-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 2Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 2Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS43TR16128DL-107MBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.91ns; TWBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Clock frequency: 1066MHz
Access time: 13.91ns
Case: TWBGA96
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.91ns; TWBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Clock frequency: 1066MHz
Access time: 13.91ns
Case: TWBGA96
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
товар відсутній
| IS43TR16128DL-107MBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1066MHz; 13.91ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: -40...95°C
Case: TWBGA96
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1066MHz; 13.91ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: -40...95°C
Case: TWBGA96
товар відсутній
| IS43DR82560C-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 5ns
Memory organisation: 32Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 5ns
Memory organisation: 32Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR82560C-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 5ns
Memory organisation: 32Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 5ns
Memory organisation: 32Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR82560C-3DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 333MHz
Memory: 2Gb DRAM
Kind of interface: parallel
Memory organisation: 32Mx8bitx8
Kind of package: in-tray; tube
Kind of memory: DDR2; SDRAM
Supply voltage: 1.7...1.9V DC
Access time: 5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Clock frequency: 333MHz
Memory: 2Gb DRAM
Kind of interface: parallel
Memory organisation: 32Mx8bitx8
Kind of package: in-tray; tube
Kind of memory: DDR2; SDRAM
Supply voltage: 1.7...1.9V DC
Access time: 5ns
товар відсутній
| IS43TR82560D-125KBLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.5V DC
товар відсутній
| IS43TR82560D-125KBLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Kind of interface: parallel
Memory capacity: 2Gb
Clock frequency: 1066MHz
Supply voltage: 1.5V DC
Access time: 13.75ns
Memory organisation: 256Mx8bit
Case: TWBGA78
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Kind of interface: parallel
Memory capacity: 2Gb
Clock frequency: 1066MHz
Supply voltage: 1.5V DC
Access time: 13.75ns
Memory organisation: 256Mx8bit
Case: TWBGA78
товар відсутній
| IS43TR82560DL-125KBLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
товар відсутній
| IS43TR82560DL-125KBLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Memory capacity: 2Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.35V DC
товар відсутній
| IS61DDB21M18C-250M3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
| IS61DDB22M18C-250M3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
| IS61DDB24M18A-250M3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
| IS61QDB21M18A-250B4LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
| IS61QDB24M18A-250B4LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
| IS64WV2568EDBLL-10BLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Kind of package: in-tray; tube
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Kind of package: in-tray; tube
Access time: 10ns
товар відсутній
| IS61WV2568EDBLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Kind of package: in-tray; tube
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Kind of package: in-tray; tube
Access time: 10ns
товар відсутній
| IS61WV2568EDBLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Kind of package: reel; tape
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Kind of package: reel; tape
Access time: 10ns
товар відсутній
| IS64WV2568EDBLL-10CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Kind of package: in-tray; tube
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Kind of package: in-tray; tube
Access time: 10ns
товар відсутній
| IS64WV25616EDBLL-10BLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS64WV25616EDBLL-10BLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV25616EDBLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV25616EDBLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS64WV25616EDBLL-10CTLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 4Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 4Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS64WV25616EDBLL-10CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 4Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 4Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV25616EDBLL-8BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 8ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 8ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61WV25616EDBLL-8BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 8ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 8ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
товар відсутній
| IS61WV2568EDBLL-10KLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: SOJ36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: SOJ36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Access time: 10ns
товар відсутній
| IS61WV2568EDBLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Access time: 10ns
товар відсутній
| IS61WV2568EDBLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Access time: 10ns
товар відсутній
| IS61WV25616EDBLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV25616EDBLL-8TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 8ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 8ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 392.89 грн |
| 3+ | 281.62 грн |
| IS43DR16128C-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR16160B-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR16320E-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 512Mb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 8Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 512Mb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 8Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR16640C-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 8Mx16bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 8Mx16bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR81280C-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR86400E-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel; tape
товар відсутній
| IS46DR16160B-25DBLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
товар відсутній
| IS46DR16320E-25DBLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
товар відсутній
| IS46DR16640C-25DBLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 8Mx16bitx8
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 8Mx16bitx8
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
товар відсутній
| IS43DR16128C-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR16128C-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR16160B-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR16160B-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR16160B-25DBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: 0...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 256Mb DRAM
Operating temperature: 0...85°C
Kind of package: reel; tape
Access time: 12.5ns
Memory organisation: 4Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR16320E-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 512Mb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 512Mb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR16320E-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 512Mb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 512Mb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx4
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR16640C-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR16640C-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA84
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 8Mx16bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR81280C-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR81280C-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA60
Type of integrated circuit: DRAM memory
Clock frequency: 400MHz
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Access time: 12.5ns
Memory organisation: 16Mx8bitx8
Kind of memory: DDR2; SDRAM
Kind of interface: parallel
товар відсутній
| IS43DR86400E-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
товар відсутній
| IS43DR86400E-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
товар відсутній