| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|
| IS61C25616AS-25TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 5V; 25ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Operating voltage: 5V Access time: 25ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD |
товару немає в наявності |
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| IS61C256AL-12JLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 12ns Case: SOJ28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Part status: Obsolete |
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| IS61C64AL-10JLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; SOJ28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64kb SRAM Memory organisation: 8kx8bit Operating voltage: 5V Access time: 10ns Case: SOJ28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
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| IS61C64AL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64kb SRAM Memory organisation: 8kx8bit Operating voltage: 5V Access time: 10ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
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| IS61WV12824-8BL-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 8ns; PBGA119; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 3Mb SRAM Memory organisation: 128kx24bit Operating voltage: 3.3V Access time: 8ns Case: PBGA119 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
товару немає в наявності |
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| IS61LV25616AL-10TL | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 3.3V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
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| IS61C6416AL-12KLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 5V Access time: 12ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
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| IS61LV256AL-10JLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 3.3V Access time: 10ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
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|
IS61C5128AL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 5V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
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|
IS61C3216AL-12TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 32kx16bit Operating voltage: 5V Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
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| IS61WV25616BLL-10TL | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
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| IS61C5128AS-25HLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 5V Access time: 25ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS61C64AL-10JLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; SOJ28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64kb SRAM Memory organisation: 8kx8bit Operating voltage: 5V Access time: 10ns Case: SOJ28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS61C64AL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64kb SRAM Memory organisation: 8kx8bit Operating voltage: 5V Access time: 10ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
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| IS61LF6436A-8.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2.25MbSRAM; 64kx36bit; 3.3V; 8.5ns; QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2.25Mb SRAM Memory organisation: 64kx36bit Operating voltage: 3.3V Access time: 8.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
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| IS61LF12836EC-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Operating voltage: 3.3V Access time: 7.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||
|
IS63LV1024L-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 10ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 3.3V Access time: 10ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
|
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| IS43R16800E-5TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS43R16800E-5TL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS43R16800E-5TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS43R16800E-6TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS43R16800E-6TL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS42S32400F-6BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Kind of package: in-tray; tube Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: 0...70°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS42S32400F-6BL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Kind of package: reel; tape Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: 0...70°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS42S32400F-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Kind of package: in-tray; tube Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS42S32400F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Kind of package: reel; tape Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS42S32400F-6TL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II Kind of package: reel; tape Case: TSOP86 II Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: 0...70°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS42S32400F-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II Kind of package: in-tray; tube Case: TSOP86 II Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS42S32400F-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II Kind of package: reel; tape Case: TSOP86 II Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS42S32400F-7BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90 Kind of package: in-tray; tube Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: 0...70°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS42S32400F-7BL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90 Kind of package: reel; tape Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: 0...70°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS42S32400F-7BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90 Kind of package: in-tray; tube Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS42S32400F-7BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90 Kind of package: reel; tape Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS42S32400F-7TL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II Kind of package: reel; tape Case: TSOP86 II Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: 0...70°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS45S32400F-6BLA1 | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Kind of package: in-tray; tube Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS45S32400F-6BLA2 | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Kind of package: in-tray; tube Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...105°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS45S32400F-6BLA2-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Kind of package: reel; tape Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...105°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS45S32400F-6TLA2 | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II Kind of package: in-tray; tube Case: TSOP86 II Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...105°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS45S32400F-7BLA1 | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90 Kind of package: in-tray; tube Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS45S32400F-7BLA2 | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90 Kind of package: in-tray; tube Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...105°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS45S32400F-7BLA2-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90 Kind of package: reel; tape Case: TFBGA90 Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...105°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS45S32400F-7TLA1 | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II Kind of package: in-tray; tube Case: TSOP86 II Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS45S32400F-7TLA1-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II Kind of package: reel; tape Case: TSOP86 II Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS43LR16400C-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: in-tray; tube Kind of memory: LPDDR; SDRAM Kind of interface: parallel Mounting: SMD Case: TFBGA60 Memory organisation: 1Mx16bitx4 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 1.7...1.95V DC Memory: 64Mb DRAM Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS45S16400J-6CTLA1-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of interface: parallel Kind of package: reel; tape Kind of memory: SDRAM Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 64Mb DRAM Clock frequency: 166MHz Memory organisation: 1Mx16bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||
| IS45S16400J-7CTLA2-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Kind of interface: parallel Mounting: SMD Case: TSOP54 II Memory organisation: 1Mx16bitx4 Operating temperature: -40...105°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 64Mb DRAM Clock frequency: 143MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||
|
IS25LP064D-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 166MHz Operating voltage: 2.3...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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| IS61C25616AS-25TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 5V; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Operating voltage: 5V
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 5V; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Operating voltage: 5V
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
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| IS61C256AL-12JLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Part status: Obsolete
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Part status: Obsolete
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| IS61C64AL-10JLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Operating voltage: 5V
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Operating voltage: 5V
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61C64AL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Operating voltage: 5V
Access time: 10ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Operating voltage: 5V
Access time: 10ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61WV12824-8BL-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 8ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 3Mb SRAM
Memory organisation: 128kx24bit
Operating voltage: 3.3V
Access time: 8ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 8ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 3Mb SRAM
Memory organisation: 128kx24bit
Operating voltage: 3.3V
Access time: 8ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
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| IS61LV25616AL-10TL | ![]() |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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| IS61C6416AL-12KLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61LV256AL-10JLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61C5128AL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 5V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 5V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61C3216AL-12TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61WV25616BLL-10TL |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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| IS61C5128AS-25HLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 5V
Access time: 25ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 5V
Access time: 25ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61C64AL-10JLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Operating voltage: 5V
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Operating voltage: 5V
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61C64AL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Operating voltage: 5V
Access time: 10ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Operating voltage: 5V
Access time: 10ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61LF6436A-8.5TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2.25MbSRAM; 64kx36bit; 3.3V; 8.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2.25Mb SRAM
Memory organisation: 64kx36bit
Operating voltage: 3.3V
Access time: 8.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2.25MbSRAM; 64kx36bit; 3.3V; 8.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2.25Mb SRAM
Memory organisation: 64kx36bit
Operating voltage: 3.3V
Access time: 8.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS61LF12836EC-7.5TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| IS63LV1024L-10KLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 168.31 грн |
| IS43R16800E-5TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
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| IS43R16800E-5TL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
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| IS43R16800E-5TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
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| IS43R16800E-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
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| IS43R16800E-6TL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
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| IS42S32400F-6BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS42S32400F-6BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: reel; tape
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: reel; tape
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS42S32400F-6BLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS42S32400F-6BLI-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: reel; tape
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: reel; tape
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS42S32400F-6TL-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II
Kind of package: reel; tape
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II
Kind of package: reel; tape
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS42S32400F-6TLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II
Kind of package: in-tray; tube
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II
Kind of package: in-tray; tube
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS42S32400F-6TLI-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II
Kind of package: reel; tape
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II
Kind of package: reel; tape
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS42S32400F-7BL |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: 0...70°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: 0...70°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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| IS42S32400F-7BL-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: reel; tape
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: 0...70°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: reel; tape
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: 0...70°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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| IS42S32400F-7BLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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| IS42S32400F-7BLI-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: reel; tape
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: reel; tape
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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| IS42S32400F-7TL-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II
Kind of package: reel; tape
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: 0...70°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II
Kind of package: reel; tape
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: 0...70°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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| IS45S32400F-6BLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS45S32400F-6BLA2 |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...105°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...105°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS45S32400F-6BLA2-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: reel; tape
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...105°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90
Kind of package: reel; tape
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...105°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS45S32400F-6TLA2 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II
Kind of package: in-tray; tube
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...105°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TSOP86 II
Kind of package: in-tray; tube
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...105°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS45S32400F-7BLA1 |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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| IS45S32400F-7BLA2 |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: in-tray; tube
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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| IS45S32400F-7BLA2-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: reel; tape
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TFBGA90
Kind of package: reel; tape
Case: TFBGA90
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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| IS45S32400F-7TLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II
Kind of package: in-tray; tube
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II
Kind of package: in-tray; tube
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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| IS45S32400F-7TLA1-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II
Kind of package: reel; tape
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 143MHz; 7ns; TSOP86 II
Kind of package: reel; tape
Case: TSOP86 II
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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| IS43LR16400C-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of memory: LPDDR; SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Memory organisation: 1Mx16bitx4
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of memory: LPDDR; SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Memory organisation: 1Mx16bitx4
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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| IS45S16400J-6CTLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of package: reel; tape
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Memory organisation: 1Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of package: reel; tape
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Memory organisation: 1Mx16bitx4
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| IS45S16400J-7CTLA2-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Memory organisation: 1Mx16bitx4
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Memory organisation: 1Mx16bitx4
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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од. на суму грн.
| IS25LP064D-JBLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 166MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 98.75 грн |





