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IS64LF204818B-7.5TQLA3 | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel Operating temperature: -40...125°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 36Mb SRAM Mounting: SMD Case: TQFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx18bit Access time: 7.5ns |
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IS61LF204818B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 36Mb SRAM Mounting: SMD Case: TQFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx18bit Access time: 7.5ns |
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IS61LF204836B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 7.5ns; TQFP100; parallel Kind of package: in-tray; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx36bit Access time: 7.5ns Kind of interface: parallel Memory: 72Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TQFP100 Operating voltage: 3.3V |
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IS61VF204836B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 7.5ns; TQFP100; parallel Kind of package: in-tray; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx36bit Access time: 7.5ns Kind of interface: parallel Memory: 72Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TQFP100 Operating voltage: 2.5V |
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| IS61WV204816BLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS61WV204816BLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS61WV204816BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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IS61WV20488BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2048x8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
на замовлення 131 шт: термін постачання 21-30 дні (днів) |
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| IS64WV20488BLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS61WV20488BLL-10MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS61WV20488BLL-10MLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS62WV20488BLL-25MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 25ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS62WV20488BLL-25MLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 25ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS62WV20488BLL-25TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 25ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS62WV20488FBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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| IS61NLP204818B-250B3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 2.8ns; TFBGA165; 0÷70°C Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 36Mb SRAM Mounting: SMD Case: TFBGA165 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx18bit Access time: 2.8ns |
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IS61NLP204836B-166TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel Kind of package: in-tray; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx36bit Access time: 3.8ns Kind of interface: parallel Memory: 72Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TQFP100 Operating voltage: 3.3V |
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| IS61C6416AL-12KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 12ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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| IS61C6416AL-12KLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 12ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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IS61C3216AL-12KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 32kx16bit Access time: 12ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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| IS61WV6416BLL-12KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 12ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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| IS61WV6416BLL-12KLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 12ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V |
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IS61LP6432A-133TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 64kx32bit; 3.3V; 4ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 64kx32bit Access time: 4ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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IS61LP6432A-133TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 64kx32bit; 3.3V; 4ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 64kx32bit Access time: 4ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V |
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IS61LP6436A-133TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64kx36bit; 3.3V; 4ns; TQFP100; parallel; -40÷85°C Operating voltage: 3.3V Kind of package: in-tray; tube Operating temperature: -40...85°C Kind of memory: SRAM Mounting: SMD Memory capacity: 2.25Mb Kind of interface: parallel Access time: 4ns Memory organisation: 64kx36bit Case: TQFP100 Type of integrated circuit: SRAM memory |
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| IS64C25616AL-12CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Mb SRAM Operating voltage: 5V Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 12ns |
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| IS64C25616AL-12CTLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of interface: parallel Memory: 4Mb SRAM Operating voltage: 5V Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 12ns |
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| IS62C25616EL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 5V |
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| IS62C25616EL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 5V |
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| IS61LF25618A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100 Operating temperature: -40...85°C Mounting: SMD Operating voltage: 3.3V Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Case: QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Access time: 7.5ns |
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| IS61LF25618A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100 Operating temperature: -40...85°C Mounting: SMD Operating voltage: 3.3V Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Case: QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Access time: 7.5ns |
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| IS61LV25616AL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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| IS61LV25616AL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V |
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| IS61LV25616AL-10TL | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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| IS61LV25616AL-10TL-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape Operating voltage: 3.3V |
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| IS61WV25616BLS-25TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 25ns Kind of interface: parallel Memory: 4Mb SRAM Operating voltage: 2.4...3.6V |
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IS62WV51216BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx16bit Access time: 55ns Kind of interface: parallel Memory: 8Mb SRAM Mounting: SMD Case: TSOP44 Operating voltage: 3.3V |
на замовлення 2950 шт: термін постачання 21-30 дні (днів) |
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| IS61C25616AS-25TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 5V; 25ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Access time: 25ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating voltage: 5V |
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IS61C256AL-12JLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel Operating temperature: -40...85°C Kind of interface: parallel Memory: 256kb SRAM Mounting: SMD Case: SOJ28 Operating voltage: 5V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 12ns |
на замовлення 205 шт: термін постачання 21-30 дні (днів) |
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| IS61C256AL-12JLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel Operating temperature: -40...85°C Kind of interface: parallel Memory: 256kb SRAM Mounting: SMD Case: SOJ28 Operating voltage: 5V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 12ns |
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IS61C256AL-12TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32kx8bit; 5V; 12ns; TSOP28; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 12ns Case: TSOP28 Kind of interface: parallel Memory capacity: 256kb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
на замовлення 215 шт: термін постачання 21-30 дні (днів) |
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IS61C25616AL-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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IS61C25616AL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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| IS61C256AL-12TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32kx8bit; 5V; 12ns; TSOP28; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 12ns Case: TSOP28 Kind of interface: parallel Memory capacity: 256kb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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| IS61C25616AL-10KLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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| IS61C25616AL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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| IS61C25616AS-25TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 25ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 25ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
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| IS61QDPB42M36A1-500M3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.8V |
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| IS25LE01G-RILE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; LFBGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: LFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
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| IS25LE512M-RMLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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IS25LP010E-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Mb FLASH Interface: QPI; SPI Operating frequency: 104MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
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IS25LP010E-JNLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Mb FLASH Interface: QPI; SPI Operating frequency: 104MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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| IS25LP010E-JYLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Mb FLASH Interface: QPI; SPI Operating frequency: 104MHz Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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IS25LP016D-JBLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
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IS25LP016D-JBLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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IS25LP016D-JLLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
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IS25LP016D-JLLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
товар відсутній |
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| IS25LP016D-JMLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
товар відсутній |
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| IS25LP016D-JMLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
товар відсутній |
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IS25LP016D-JNLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.3...3.6V |
товар відсутній |
| IS64LF204818B-7.5TQLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 7.5ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 7.5ns
товар відсутній
| IS61LF204818B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 7.5ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 7.5ns
товар відсутній
| IS61LF204836B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
товар відсутній
| IS61VF204836B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 7.5ns; TQFP100; parallel
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 2.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 7.5ns; TQFP100; parallel
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 2.5V
товар відсутній
| IS61WV204816BLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV204816BLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV204816BLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV20488BLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
на замовлення 131 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1747.69 грн |
| 2+ | 1534.67 грн |
| 100+ | 1489.16 грн |
| IS64WV20488BLL-10CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV20488BLL-10MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV20488BLL-10MLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS62WV20488BLL-25MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS62WV20488BLL-25MLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS62WV20488BLL-25TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS62WV20488FBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS61NLP204818B-250B3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 2.8ns; TFBGA165; 0÷70°C
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Case: TFBGA165
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 2.8ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 2.8ns; TFBGA165; 0÷70°C
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Case: TFBGA165
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 2.8ns
товар відсутній
| IS61NLP204836B-166TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 3.8ns
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 3.8ns
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
товар відсутній
| IS61C6416AL-12KLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
| IS61C6416AL-12KLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
| IS61C3216AL-12KLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 232.06 грн |
| 4+ | 209.08 грн |
| 5+ | 206.24 грн |
| 11+ | 197.7 грн |
| IS61WV6416BLL-12KLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61WV6416BLL-12KLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
товар відсутній
| IS61LP6432A-133TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 64kx32bit; 3.3V; 4ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 64kx32bit
Access time: 4ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 64kx32bit; 3.3V; 4ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 64kx32bit
Access time: 4ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61LP6432A-133TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 64kx32bit; 3.3V; 4ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 64kx32bit
Access time: 4ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 64kx32bit; 3.3V; 4ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 64kx32bit
Access time: 4ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
товар відсутній
| IS61LP6436A-133TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kx36bit; 3.3V; 4ns; TQFP100; parallel; -40÷85°C
Operating voltage: 3.3V
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SRAM
Mounting: SMD
Memory capacity: 2.25Mb
Kind of interface: parallel
Access time: 4ns
Memory organisation: 64kx36bit
Case: TQFP100
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kx36bit; 3.3V; 4ns; TQFP100; parallel; -40÷85°C
Operating voltage: 3.3V
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of memory: SRAM
Mounting: SMD
Memory capacity: 2.25Mb
Kind of interface: parallel
Access time: 4ns
Memory organisation: 64kx36bit
Case: TQFP100
Type of integrated circuit: SRAM memory
товар відсутній
| IS64C25616AL-12CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 12ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 12ns
товар відсутній
| IS64C25616AL-12CTLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 12ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 12ns
товар відсутній
| IS62C25616EL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 5V
товар відсутній
| IS62C25616EL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 5V
товар відсутній
| IS61LF25618A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
товар відсутній
| IS61LF25618A-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Case: QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
товар відсутній
| IS61LV25616AL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61LV25616AL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
товар відсутній
| IS61LV25616AL-10TL | |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61LV25616AL-10TL-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 3.3V
товар відсутній
| IS61WV25616BLS-25TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Kind of interface: parallel
Memory: 4Mb SRAM
Operating voltage: 2.4...3.6V
товар відсутній
| IS62WV51216BLL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb SRAM
Mounting: SMD
Case: TSOP44
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb SRAM
Mounting: SMD
Case: TSOP44
Operating voltage: 3.3V
на замовлення 2950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 531.51 грн |
| 2+ | 471.5 грн |
| 5+ | 445.89 грн |
| 100+ | 433.81 грн |
| IS61C25616AS-25TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 5V; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 5V; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 5V
товар відсутній
| IS61C256AL-12JLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256kb SRAM
Mounting: SMD
Case: SOJ28
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256kb SRAM
Mounting: SMD
Case: SOJ28
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
на замовлення 205 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 187.64 грн |
| 5+ | 151.48 грн |
| 25+ | 120.19 грн |
| IS61C256AL-12JLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256kb SRAM
Mounting: SMD
Case: SOJ28
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 256kb SRAM
Mounting: SMD
Case: SOJ28
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
товар відсутній
| IS61C256AL-12TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32kx8bit; 5V; 12ns; TSOP28; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: TSOP28
Kind of interface: parallel
Memory capacity: 256kb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32kx8bit; 5V; 12ns; TSOP28; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: TSOP28
Kind of interface: parallel
Memory capacity: 256kb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.64 грн |
| 5+ | 103.83 грн |
| 9+ | 97.43 грн |
| 23+ | 92.45 грн |
| IS61C25616AL-10KLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 719.91 грн |
| 2+ | 483.59 грн |
| 5+ | 457.27 грн |
| IS61C25616AL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 540.7 грн |
| 3+ | 355.58 грн |
| 7+ | 336.38 грн |
| IS61C256AL-12TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32kx8bit; 5V; 12ns; TSOP28; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: TSOP28
Kind of interface: parallel
Memory capacity: 256kb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32kx8bit; 5V; 12ns; TSOP28; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: TSOP28
Kind of interface: parallel
Memory capacity: 256kb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
| IS61C25616AL-10KLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
| IS61C25616AL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
| IS61C25616AS-25TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 25ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
товар відсутній
| IS61QDPB42M36A1-500M3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
| IS25LE01G-RILE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; LFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: LFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; LFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: LFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LE512M-RMLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP010E-JNLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP010E-JNLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP010E-JYLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1MbFLASH; QPI,SPI; 104MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP016D-JBLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP016D-JBLA3-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP016D-JLLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP016D-JLLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP016D-JMLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP016D-JMLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP016D-JNLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.3...3.6V
товар відсутній