| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
| IS25WP01G-RILA3 | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V Operating temperature: -40...125°C Memory: 1Gb FLASH Operating frequency: 104MHz Interface: DTR; QPI; SPI Type of integrated circuit: FLASH memory Kind of package: in-tray; tube Case: LFBGA24 Kind of memory: NOR Kind of interface: serial Mounting: SMD Operating voltage: 1.65...1.95V |
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| IS25WP01G-RILE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V Operating temperature: -40...105°C Memory: 1Gb FLASH Operating frequency: 104MHz Interface: DTR; QPI; SPI Type of integrated circuit: FLASH memory Kind of package: in-tray; tube Case: LFBGA24 Kind of memory: NOR Kind of interface: serial Mounting: SMD Operating voltage: 1.65...1.95V |
товару немає в наявності |
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|
IS25LP128-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm |
товару немає в наявності |
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|
IS42S16400J-7TL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
товару немає в наявності |
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| IS42S16400J-5BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TFBGA54; 0÷70°C Kind of package: in-tray; tube Case: TFBGA54 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 3...3.6V DC Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 200MHz Kind of memory: SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-6BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-7BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-7BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-5TL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-6BL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-6TL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-7B2LI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-7BL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-7BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16400J-7B2LI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61QDB42M36A-300M3L | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS63WV1024BLL-12BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 12ns; TFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 3.3V Access time: 12ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: in-tray; tube Case: TFBGA60 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: reel; tape Case: TFBGA60 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: in-tray; tube Case: TFBGA60 Kind of interface: parallel Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-5BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: in-tray; tube Case: TWBGA60 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: reel; tape Case: TWBGA60 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-5BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: in-tray; tube Case: TWBGA60 Kind of interface: parallel Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R32160D-5BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 200MHz; 5ns; LFBGA144 Kind of package: in-tray; tube Case: LFBGA144 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.6V DC Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R32400E-5BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144 Kind of package: in-tray; tube Case: LFBGA144 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R32400E-5BL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144 Kind of package: reel; tape Case: LFBGA144 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R32400E-5BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144 Kind of package: in-tray; tube Case: LFBGA144 Kind of interface: parallel Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61DDB22M18C-250M3L | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61QDB22M36A-333B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43TR81024B-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC Mounting: SMD Case: TWBGA78 Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: -40...95°C Access time: 13.75ns Supply voltage: 1.5V DC Clock frequency: 933MHz Memory organisation: 1Gx8bit Memory: 8Gb DRAM Kind of memory: DDR3; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43TR81024BL-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA78 Access time: 13.75ns Supply voltage: 1.35V DC Clock frequency: 933MHz Memory organisation: 1Gx8bit Memory: 8Gb DRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
IS42S16160G-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3.3V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
IS42S16320D-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 512Mb DRAM Clock frequency: 143MHz Memory organisation: 8Mx16bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| IS42S32400F-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 143MHz; 7ns; TSOP86 II; tube Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP86 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 128Mb DRAM Clock frequency: 143MHz Memory organisation: 4Mx32bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160D-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 16Mx32bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
IS42S16320F-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 143MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: in-tray Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3.3V DC Memory: 512Mb DRAM Clock frequency: 143MHz Memory organisation: 32Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
IS42S16800F-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 128Mb DRAM Clock frequency: 143MHz Memory organisation: 2Mx16bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| IS42S32200L-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP86 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3.3V DC Memory: 64Mb DRAM Clock frequency: 166MHz Memory organisation: 512kx32bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S32800J-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Kind of memory: SDRAM Case: TSOP86 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 256Mb DRAM Clock frequency: 143MHz Memory organisation: 8Mx32bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320D-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 32Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16800E-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bit; 166MHz; 6ns; TSOP66 II; tube Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16160J-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16160J-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 256Mb DRAM Clock frequency: 143MHz Memory organisation: 4Mx16bitx4 |
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| IS42S81600F-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 4Mx8bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Clock frequency: 143MHz Memory organisation: 4Mx8bitx4 |
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В кошику од. на суму грн. | |||||||
|
IS62WV2568BLL-55HLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.5...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
на замовлення 166 шт: термін постачання 21-30 дні (днів) |
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| IS62WV2568BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.5...3.6V Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
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В кошику од. на суму грн. | |||||||
| IS62WV2568BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Operating voltage: 2.5...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
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В кошику од. на суму грн. | |||||||
| IS62WV2568BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Operating voltage: 2.5...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568BLL-55HLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Operating voltage: 2.5...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568EBLL-45HLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
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В кошику од. на суму грн. | |||||||
| IS62WV2568EBLL-45HLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568EBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568EBLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS64WV2568EDBLL-10BLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.4...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...125°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61WV2568EDBLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.4...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61WV2568EDBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.4...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. |
| IS25WP01G-RILA3 |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Operating temperature: -40...125°C
Memory: 1Gb FLASH
Operating frequency: 104MHz
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
Kind of package: in-tray; tube
Case: LFBGA24
Kind of memory: NOR
Kind of interface: serial
Mounting: SMD
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Operating temperature: -40...125°C
Memory: 1Gb FLASH
Operating frequency: 104MHz
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
Kind of package: in-tray; tube
Case: LFBGA24
Kind of memory: NOR
Kind of interface: serial
Mounting: SMD
Operating voltage: 1.65...1.95V
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| IS25WP01G-RILE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Memory: 1Gb FLASH
Operating frequency: 104MHz
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
Kind of package: in-tray; tube
Case: LFBGA24
Kind of memory: NOR
Kind of interface: serial
Mounting: SMD
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Memory: 1Gb FLASH
Operating frequency: 104MHz
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
Kind of package: in-tray; tube
Case: LFBGA24
Kind of memory: NOR
Kind of interface: serial
Mounting: SMD
Operating voltage: 1.65...1.95V
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| IS25LP128-JKLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
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| IS42S16400J-7TL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
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В кошику
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| IS42S16400J-5BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TFBGA54; 0÷70°C
Kind of package: in-tray; tube
Case: TFBGA54
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TFBGA54; 0÷70°C
Kind of package: in-tray; tube
Case: TFBGA54
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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В кошику
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| IS42S16400J-6BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
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| IS42S16400J-7BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
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| IS42S16400J-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
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| IS42S16400J-7BLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
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| IS42S16400J-5TL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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В кошику
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| IS42S16400J-6BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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В кошику
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| IS42S16400J-6TL-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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| IS42S16400J-7B2LI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
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| IS42S16400J-7BL-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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В кошику
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| IS42S16400J-6BLI-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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| IS42S16400J-6TLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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| IS42S16400J-7BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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| IS42S16400J-7B2LI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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| IS61QDB42M36A-300M3L |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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| IS63WV1024BLL-12BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 12ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Access time: 12ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 12ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Access time: 12ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS43R16160F-5BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Case: TFBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Case: TFBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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| IS43R16160F-5BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: reel; tape
Case: TFBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: reel; tape
Case: TFBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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| IS43R16160F-5BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Case: TFBGA60
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Case: TFBGA60
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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| IS43R16320F-5BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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| IS43R16320F-5BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: reel; tape
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: reel; tape
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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| IS43R16320F-5BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Case: TWBGA60
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Case: TWBGA60
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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| IS43R32160D-5BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 200MHz; 5ns; LFBGA144
Kind of package: in-tray; tube
Case: LFBGA144
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.6V DC
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 200MHz; 5ns; LFBGA144
Kind of package: in-tray; tube
Case: LFBGA144
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.6V DC
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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| IS43R32400E-5BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Kind of package: in-tray; tube
Case: LFBGA144
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Kind of package: in-tray; tube
Case: LFBGA144
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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| IS43R32400E-5BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Kind of package: reel; tape
Case: LFBGA144
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Kind of package: reel; tape
Case: LFBGA144
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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| IS43R32400E-5BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Kind of package: in-tray; tube
Case: LFBGA144
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Kind of package: in-tray; tube
Case: LFBGA144
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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| IS61DDB22M18C-250M3L |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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| IS61QDB22M36A-333B4LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS43TR81024B-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC
Mounting: SMD
Case: TWBGA78
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...95°C
Access time: 13.75ns
Supply voltage: 1.5V DC
Clock frequency: 933MHz
Memory organisation: 1Gx8bit
Memory: 8Gb DRAM
Kind of memory: DDR3; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC
Mounting: SMD
Case: TWBGA78
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...95°C
Access time: 13.75ns
Supply voltage: 1.5V DC
Clock frequency: 933MHz
Memory organisation: 1Gx8bit
Memory: 8Gb DRAM
Kind of memory: DDR3; SDRAM
Type of integrated circuit: DRAM memory
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| IS43TR81024BL-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA78
Access time: 13.75ns
Supply voltage: 1.35V DC
Clock frequency: 933MHz
Memory organisation: 1Gx8bit
Memory: 8Gb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA78
Access time: 13.75ns
Supply voltage: 1.35V DC
Clock frequency: 933MHz
Memory organisation: 1Gx8bit
Memory: 8Gb DRAM
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| IS42S16160G-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
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| IS42S16320D-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 512Mb DRAM
Clock frequency: 143MHz
Memory organisation: 8Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 512Mb DRAM
Clock frequency: 143MHz
Memory organisation: 8Mx16bitx4
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| IS42S32400F-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 143MHz; 7ns; TSOP86 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 143MHz; 7ns; TSOP86 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx32bit
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| IS43R16160D-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
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| IS42S16320F-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 143MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 512Mb DRAM
Clock frequency: 143MHz
Memory organisation: 32Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 143MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 512Mb DRAM
Clock frequency: 143MHz
Memory organisation: 32Mx16bit
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| IS42S16800F-7TLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 2Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 2Mx16bitx4
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| IS42S32200L-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Memory organisation: 512kx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Memory organisation: 512kx32bitx4
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| IS42S32800J-7TLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 256Mb DRAM
Clock frequency: 143MHz
Memory organisation: 8Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 256Mb DRAM
Clock frequency: 143MHz
Memory organisation: 8Mx32bit
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| IS43R16320D-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 32Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 32Mx16bit
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| IS43R16800E-6TLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bit
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| IS42S16160J-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
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| IS42S16160J-7TLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 256Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 256Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx16bitx4
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| IS42S81600F-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx8bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx8bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx8bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx8bitx4
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| IS62WV2568BLL-55HLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
на замовлення 166 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 164.29 грн |
| 5+ | 147.05 грн |
| 25+ | 131.32 грн |
| IS62WV2568BLL-55TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
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| IS62WV2568BLL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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| IS62WV2568BLL-55BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
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| IS62WV2568BLL-55HLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
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| IS62WV2568EBLL-45BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV2568EBLL-45HLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV2568EBLL-45HLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 45ns
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| IS62WV2568EBLL-45TLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV2568EBLL-45TLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 45ns
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| IS64WV2568EDBLL-10BLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 10ns
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| IS61WV2568EDBLL-10BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 10ns
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| IS61WV2568EDBLL-10BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 10ns
товару немає в наявності
В кошику
од. на суму грн.



