Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS61VPS204836B-250B3LI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 2.5V Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61VVPS204818B-166B3LI | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 1.8V Access time: 3.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61LPS51218B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: QFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61LPS51218B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: QFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP51218B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: QFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP51218B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: QFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP102418B-200B3L | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Mounting: SMD Operating temperature: 0...70°C Case: TFBGA165 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP102418B-200B3LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA165 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP102418B-200B3LI-TR | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns Kind of package: reel; tape Kind of interface: parallel Memory: 18Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA165 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP102418B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: QFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP102418B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns Kind of package: reel; tape Kind of interface: parallel Memory: 18Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: QFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS61NLP204818B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx18bit Access time: 3.1ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 36Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TQFP100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS61NVP204818B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel Operating voltage: 2.5V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx18bit Access time: 3.1ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 36Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TQFP100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
IS61WV25616BLS-25TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Mounting: SMD Operating temperature: -40...85°C Case: TSOP44 II Operating voltage: 2.4...3.6V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 25ns Kind of interface: parallel Memory: 4Mb SRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61WV25616BLS-25TLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Mounting: SMD Operating temperature: -40...85°C Case: TSOP44 II Operating voltage: 2.4...3.6V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 25ns Kind of interface: parallel Memory: 4Mb SRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS62WV51216BLL-55TLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel Case: TSOP44 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx16bit Access time: 55ns Kind of interface: parallel Memory: 8Mb SRAM Mounting: SMD |
на замовлення 2946 шт: термін постачання 21-30 дні (днів) |
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IS61C25616AL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel Operating temperature: -40...85°C Case: TSOP44 II Operating voltage: 5V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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IS61QDPB42M36A1-500M3LI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS42S16400J-5TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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IS42S16400J-6TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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IS42S16400J-6TLI | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC Part status: Not recommended for new designs |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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IS42S16400J-7TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 452 шт: термін постачання 21-30 дні (днів) |
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IS42S32200L-6TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP86 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 174 шт: термін постачання 21-30 дні (днів) |
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IS42S32200L-7TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 283 шт: термін постачання 21-30 дні (днів) |
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IS42S32200L-7TLI | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 512kx32bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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IS42S32400F-6TL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 166MHz Access time: 6ns Case: TSOP86 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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IS62WV5128BLL-55T2LI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Case: TSOP32 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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IS62WV51216ALL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS62WV51216BLL-55BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS62WV51216EALL-55BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS62WV51216EBLL-45BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.2...3.6V Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS62WV51216ALL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS62WV51216BLL-55BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS62WV51216EBLL-45BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.2...3.6V Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS66WVH16M8DALL-166B1LI | ISSI |
![]() Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 128Mb SRAM Memory organisation: 16Mx8bit Operating voltage: 1.7...1.95V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS66WVH16M8DBLL-100B1LI | ISSI |
![]() Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 128Mb SRAM Memory organisation: 16Mx8bit Operating voltage: 2.7...3.6V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS66WVO32M8DALL-200BLI | ISSI |
![]() Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 256Mb SRAM Memory organisation: 32Mx8bit Operating voltage: 1.8V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS66WV1M16EBLL-55BLI | ISSI |
![]() Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS66WV1M16EBLL-55BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS66WV1M16EBLL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70DLEB | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Access time: 70ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70DLET | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Access time: 70ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70FLEB | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Access time: 70ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70FLET | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Access time: 70ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70SLEB | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Access time: 70ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70SLET | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Access time: 70ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70DLEB-TR | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Access time: 70ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70DLET-TR | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Access time: 70ns |
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IS29GL256-70FLET-TR | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Access time: 70ns |
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IS29GL256-70SLEB-TR | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Access time: 70ns |
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IS29GL256-70SLET-TR | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Access time: 70ns |
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IS62C256AL-45ULI | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 45ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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IS64WV51216BLL-10CTLA3 | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
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IS64WV51216BLL-10CTLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
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IS64WV51216BLL-10MLA3 | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
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IS64WV51216BLL-10MLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
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IS61WV51216BLL-10MLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
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IS61WV51216BLL-10MLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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IS66WV51216EALL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
IS66WV51216EBLL-55TLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
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В кошику од. на суму грн. |
IS61VPS204836B-250B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61VVPS204818B-166B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Access time: 3.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Access time: 3.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61LPS51218B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
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IS61LPS51218B-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
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IS61NLP51218B-200TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
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IS61NLP51218B-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
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IS61NLP102418B-200B3L |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TFBGA165
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TFBGA165
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IS61NLP102418B-200B3LI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA165
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA165
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IS61NLP102418B-200B3LI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA165
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA165
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IS61NLP102418B-200TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
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IS61NLP102418B-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
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IS61NLP204818B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
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IS61NVP204818B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Operating voltage: 2.5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Operating voltage: 2.5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
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IS61WV25616BLS-25TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP44 II
Operating voltage: 2.4...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Kind of interface: parallel
Memory: 4Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP44 II
Operating voltage: 2.4...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Kind of interface: parallel
Memory: 4Mb SRAM
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IS61WV25616BLS-25TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP44 II
Operating voltage: 2.4...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Kind of interface: parallel
Memory: 4Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP44 II
Operating voltage: 2.4...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Kind of interface: parallel
Memory: 4Mb SRAM
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IS62WV51216BLL-55TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Case: TSOP44
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb SRAM
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Case: TSOP44
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb SRAM
Mounting: SMD
на замовлення 2946 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 455.56 грн |
3+ | 406.16 грн |
IS61C25616AL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
на замовлення 36 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 560.37 грн |
3+ | 377.04 грн |
7+ | 356.35 грн |
IS61QDPB42M36A1-500M3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
IS42S16400J-5TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 82 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 289.67 грн |
5+ | 222.24 грн |
12+ | 209.98 грн |
25+ | 202.31 грн |
IS42S16400J-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 66 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 210.45 грн |
5+ | 172.43 грн |
15+ | 164.76 грн |
25+ | 157.87 грн |
IS42S16400J-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Part status: Not recommended for new designs
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Part status: Not recommended for new designs
на замовлення 28 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 166.29 грн |
10+ | 160.16 грн |
IS42S16400J-7TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 452 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 188.16 грн |
5+ | 167.83 грн |
6+ | 159.40 грн |
16+ | 150.20 грн |
108+ | 144.84 грн |
IS42S32200L-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 174 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 326.81 грн |
3+ | 285.08 грн |
4+ | 252.89 грн |
10+ | 239.10 грн |
25+ | 229.90 грн |
IS42S32200L-7TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 283 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 331.76 грн |
4+ | 252.89 грн |
10+ | 239.10 грн |
108+ | 229.90 грн |
IS42S32200L-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 512kx32bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 51 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 311.13 грн |
IS42S32400F-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 103 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 726.25 грн |
2+ | 488.16 грн |
5+ | 487.39 грн |
6+ | 461.33 грн |
IS62WV5128BLL-55T2LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Case: TSOP32 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Case: TSOP32 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
на замовлення 104 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 415.12 грн |
3+ | 368.61 грн |
7+ | 348.68 грн |
25+ | 334.89 грн |
IS62WV51216ALL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
IS62WV51216BLL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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од. на суму грн.
IS62WV51216EALL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
IS62WV51216EBLL-45BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
IS62WV51216ALL-70BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику
од. на суму грн.
IS62WV51216BLL-55BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику
од. на суму грн.
IS62WV51216EBLL-45BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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од. на суму грн.
IS66WVH16M8DALL-166B1LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 1.7...1.95V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 1.7...1.95V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
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IS66WVH16M8DBLL-100B1LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 2.7...3.6V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 2.7...3.6V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
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IS66WVO32M8DALL-200BLI |
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Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 256Mb SRAM
Memory organisation: 32Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 256Mb SRAM
Memory organisation: 32Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
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IS66WV1M16EBLL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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IS66WV1M16EBLL-55BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
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IS66WV1M16EBLL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS29GL256-70DLEB |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Access time: 70ns
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IS29GL256-70DLET |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Access time: 70ns
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IS29GL256-70FLEB |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Access time: 70ns
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IS29GL256-70FLET |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Access time: 70ns
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IS29GL256-70SLEB |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Access time: 70ns
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IS29GL256-70SLET |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Access time: 70ns
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IS29GL256-70DLEB-TR |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Access time: 70ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Access time: 70ns
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IS29GL256-70DLET-TR |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Access time: 70ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Access time: 70ns
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IS29GL256-70FLET-TR |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Access time: 70ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Access time: 70ns
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IS29GL256-70SLEB-TR |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Access time: 70ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Access time: 70ns
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од. на суму грн.
IS29GL256-70SLET-TR |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Access time: 70ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Access time: 70ns
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IS62C256AL-45ULI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 93 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 101.92 грн |
10+ | 95.79 грн |
26+ | 90.43 грн |
IS64WV51216BLL-10CTLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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IS64WV51216BLL-10CTLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IS64WV51216BLL-10MLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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IS64WV51216BLL-10MLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IS61WV51216BLL-10MLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61WV51216BLL-10MLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS66WV51216EALL-70BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS66WV51216EBLL-55TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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