| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS43LR16320C-6BL-TR | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
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| IS43LR16320C-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS43LR16320C-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
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| IS43LR16400C-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx16bitx4; 166MHz; 6ns; TFBGA60; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS43LR16640A-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Mounting: SMD Case: TWBGA60 Kind of package: in-tray; tube Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 16Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 1Gb DRAM Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC |
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| IS43LR16640A-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Mounting: SMD Case: TWBGA60 Kind of package: reel; tape Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 16Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 1Gb DRAM Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC |
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| IS43LR16800G-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Case: TFBGA60 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel |
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| IS43LR16800G-6BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape Case: TFBGA60 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel |
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| IS43LR16800G-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Case: TFBGA60 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel |
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| IS43LR16800G-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Case: TFBGA60 Memory: 128Mb DRAM Supply voltage: 1.7...1.95V DC Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel |
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| IS43LR32160C-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS43LR32160C-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
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| IS43LR32320B-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 1Gb DRAM Memory organisation: 8Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: LFBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS43LR32640A-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 2Gb DRAM Memory organisation: 16Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: WBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS43LR32640A-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 2Gb DRAM Memory organisation: 16Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: WBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
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| IS43LR32800G-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC Access time: 6ns |
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| IS43LR32800G-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC Access time: 6ns |
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| IS43LR32800G-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC Access time: 6ns |
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| IS43QR16256B-083RBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 13.32ns; TWBGA96; 0÷95°C Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR4; SDRAM Memory organisation: 256Mx16bit Access time: 13.32ns Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: 0...95°C Supply voltage: 1.2V DC Type of integrated circuit: DRAM memory |
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| IS43QR16256B-083RBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 13.32ns; TWBGA96; -40÷95°C Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR4; SDRAM Memory organisation: 256Mx16bit Access time: 13.32ns Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: -40...95°C Supply voltage: 1.2V DC Type of integrated circuit: DRAM memory |
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| IS43QR16512A-083TBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C Memory: 8Gb DRAM Kind of memory: DDR4; SDRAM Supply voltage: 1.2V DC Operating temperature: 0...95°C Mounting: SMD Access time: 14.16ns Memory organisation: 512Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of interface: parallel Kind of package: in-tray; tube |
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| IS43QR16512A-083TBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C Memory: 8Gb DRAM Kind of memory: DDR4; SDRAM Supply voltage: 1.2V DC Operating temperature: -40...95°C Mounting: SMD Access time: 14.16ns Memory organisation: 512Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of interface: parallel Kind of package: in-tray; tube |
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| IS43R16160F-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16160F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
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| IS43R16160F-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16160F-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16160F-5TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
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| IS43R16160F-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16160F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
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| IS43R16160F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16160F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
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| IS43R16160F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16160F-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16320F-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TWBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16320F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TWBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
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| IS43R16320F-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16320F-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16320F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
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| IS43R16320F-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TWBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16320F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16320F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
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| IS43R16320F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16320F-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
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| IS43R16320F-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
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| IS43R16800E-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory |
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| IS43R16800E-5TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory |
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| IS43R16800E-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory |
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| IS43R16800E-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory |
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| IS43R16800E-6TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: reel; tape Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory |
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| IS43R32160D-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.6VDC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx32bitx4 Clock frequency: 200MHz Access time: 5ns Case: LFBGA144 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.6V DC |
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| IS43R32400E-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.5VDC Kind of package: in-tray; tube Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 200MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 1Mx32bitx4 Case: LFBGA144 Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 5ns |
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| IS43R32400E-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.5VDC Kind of package: reel; tape Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 200MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 1Mx32bitx4 Case: LFBGA144 Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 5ns |
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| IS43R32400E-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; -40÷85°C Kind of package: in-tray; tube Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Operating temperature: -40...85°C Clock frequency: 200MHz Memory capacity: 128Mb Kind of interface: parallel Memory organisation: 1Mx32bitx4 Case: LFBGA144 Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 5ns |
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| IS43R83200F-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 8Mx8bitx4; 200MHz; 5ns; TSOP66 II Supply voltage: 2.5V DC Operating temperature: 0...70°C Access time: 5ns Type of integrated circuit: DRAM memory Clock frequency: 200MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 8Mx8bitx4 Kind of package: in-tray; tube Case: TSOP66 II Kind of memory: DDR1; SDRAM Mounting: SMD |
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| IS43R86400F-5BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: reel; tape |
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| IS43R86400F-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Memory: 512Mb DRAM Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube |
товар відсутній |
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| IS43R86400F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: reel; tape |
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| IS43TR16128C-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: 0...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC |
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| IS43TR16128C-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC |
товар відсутній |
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| IS43TR16128C-15HBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: 0...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC |
товар відсутній |
| IS43LR16320C-6BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS43LR16320C-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS43LR16320C-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS43LR16400C-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 166MHz; 6ns; TFBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx16bitx4; 166MHz; 6ns; TFBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS43LR16640A-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Mounting: SMD
Case: TWBGA60
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 16Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Mounting: SMD
Case: TWBGA60
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 16Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS43LR16640A-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Mounting: SMD
Case: TWBGA60
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 16Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Mounting: SMD
Case: TWBGA60
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 16Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 1Gb DRAM
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS43LR16800G-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
товар відсутній
| IS43LR16800G-6BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
товар відсутній
| IS43LR16800G-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
товар відсутній
| IS43LR16800G-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TFBGA60
Memory: 128Mb DRAM
Supply voltage: 1.7...1.95V DC
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
товар відсутній
| IS43LR32160C-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS43LR32160C-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS43LR32320B-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 8Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: LFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 8Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: LFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS43LR32640A-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS43LR32640A-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товар відсутній
| IS43LR32800G-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Access time: 6ns
товар відсутній
| IS43LR32800G-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Access time: 6ns
товар відсутній
| IS43LR32800G-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Access time: 6ns
товар відсутній
| IS43QR16256B-083RBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 13.32ns; TWBGA96; 0÷95°C
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR4; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.32ns
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.2V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 13.32ns; TWBGA96; 0÷95°C
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR4; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.32ns
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.2V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS43QR16256B-083RBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 13.32ns; TWBGA96; -40÷95°C
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR4; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.32ns
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Supply voltage: 1.2V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 13.32ns; TWBGA96; -40÷95°C
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR4; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.32ns
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Supply voltage: 1.2V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS43QR16512A-083TBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Kind of memory: DDR4; SDRAM
Supply voltage: 1.2V DC
Operating temperature: 0...95°C
Mounting: SMD
Access time: 14.16ns
Memory organisation: 512Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Kind of memory: DDR4; SDRAM
Supply voltage: 1.2V DC
Operating temperature: 0...95°C
Mounting: SMD
Access time: 14.16ns
Memory organisation: 512Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of interface: parallel
Kind of package: in-tray; tube
товар відсутній
| IS43QR16512A-083TBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C
Memory: 8Gb DRAM
Kind of memory: DDR4; SDRAM
Supply voltage: 1.2V DC
Operating temperature: -40...95°C
Mounting: SMD
Access time: 14.16ns
Memory organisation: 512Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C
Memory: 8Gb DRAM
Kind of memory: DDR4; SDRAM
Supply voltage: 1.2V DC
Operating temperature: -40...95°C
Mounting: SMD
Access time: 14.16ns
Memory organisation: 512Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of interface: parallel
Kind of package: in-tray; tube
товар відсутній
| IS43R16160F-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16160F-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
товар відсутній
| IS43R16160F-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16160F-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16160F-5TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
товар відсутній
| IS43R16160F-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16160F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
товар відсутній
| IS43R16160F-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16160F-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
товар відсутній
| IS43R16160F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16160F-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16320F-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16320F-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
товар відсутній
| IS43R16320F-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16320F-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16320F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
товар відсутній
| IS43R16320F-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16320F-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16320F-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
товар відсутній
| IS43R16320F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16320F-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товар відсутній
| IS43R16320F-6TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
товар відсутній
| IS43R16800E-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS43R16800E-5TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS43R16800E-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS43R16800E-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS43R16800E-6TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS43R32160D-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.6VDC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: LFBGA144
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.6VDC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: LFBGA144
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.6V DC
товар відсутній
| IS43R32400E-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.5VDC
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: LFBGA144
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.5VDC
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: LFBGA144
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 5ns
товар відсутній
| IS43R32400E-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.5VDC
Kind of package: reel; tape
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: LFBGA144
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; 0÷70°C; 2.5VDC
Kind of package: reel; tape
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: LFBGA144
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 5ns
товар відсутній
| IS43R32400E-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; -40÷85°C
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: LFBGA144
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 200MHz; 5ns; LFBGA144; -40÷85°C
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 128Mb
Kind of interface: parallel
Memory organisation: 1Mx32bitx4
Case: LFBGA144
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 5ns
товар відсутній
| IS43R83200F-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx8bitx4; 200MHz; 5ns; TSOP66 II
Supply voltage: 2.5V DC
Operating temperature: 0...70°C
Access time: 5ns
Type of integrated circuit: DRAM memory
Clock frequency: 200MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx8bitx4
Kind of package: in-tray; tube
Case: TSOP66 II
Kind of memory: DDR1; SDRAM
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx8bitx4; 200MHz; 5ns; TSOP66 II
Supply voltage: 2.5V DC
Operating temperature: 0...70°C
Access time: 5ns
Type of integrated circuit: DRAM memory
Clock frequency: 200MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx8bitx4
Kind of package: in-tray; tube
Case: TSOP66 II
Kind of memory: DDR1; SDRAM
Mounting: SMD
товар відсутній
| IS43R86400F-5BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
товар відсутній
| IS43R86400F-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
товар відсутній
| IS43R86400F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512Mb DRAM
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
товар відсутній
| IS43TR16128C-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній
| IS43TR16128C-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній
| IS43TR16128C-15HBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній