| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IS43R16800E-5TL | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R16800E-5TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R16800E-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R16800E-6TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R86400F-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: 0...70°C Kind of memory: DDR1; SDRAM Memory organisation: 16Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R86400F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: -40...85°C Kind of memory: DDR1; SDRAM Memory organisation: 16Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: reel; tape Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS46R16160F-5TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS46R16160F-6TLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R16160F-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R16160F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R16160F-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R16160F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R16160F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS46R16160F-6BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR16160B-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 400MHz Access time: 12.5ns Case: TWBGA84 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR16160B-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 400MHz Access time: 12.5ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR16160B-25DBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 400MHz Access time: 12.5ns Case: TWBGA84 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR16160B-37CBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 266MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR16160B-37CBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 266MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR16160B-3DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR16160B-3DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR16160B-3DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR16160B-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 400MHz Access time: 12.5ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR16160B-37CBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 266MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS46DR16160B-25DBLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 400MHz Access time: 12.5ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS46DR16160B-3DBLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS46DR16160B-3DBLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
IS62WV2568BLL-55HLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.5...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
на замовлення 173 шт: термін постачання 21-30 дні (днів) |
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IS62WV1288BLL-55HLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 2.5...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
на замовлення 234 шт: термін постачання 21-30 дні (днів) |
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IS62WV12816BLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Operating voltage: 2.5...3.6V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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IS62WV12816BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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| IS62WV2568BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Operating voltage: 2.5...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV6416BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; MBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 2.5...3.6V Case: MBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
IS62WVS1288FBLL-20NLI | ISSI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; SO8; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 2.2...3.6V Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS62WV25616EBLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.2...3.6V Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV102416ALL-35MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 1.65...2.2V Access time: 35ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV102416ALL-35TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 1.65...2.2V Access time: 35ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV102416BLL-25MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.4...3.6V Access time: 25ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV102416BLL-25TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.4...3.6V Access time: 25ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV10248BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Operating voltage: 2.5...3.6V Case: miniBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV10248EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Operating voltage: 2.2...3.6V Case: VFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV12816BLL-55B2LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV12816BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV12816EALL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 1.65÷2.2V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Operating voltage: 1.65...2.2V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV1288BLL-55QLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 2.5...3.6V Case: SOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
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В кошику од. на суму грн. | |||||||||
| IS62WV1288FBLL-45HLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 2.2...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
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В кошику од. на суму грн. | |||||||||
| IS62WV1288FBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 2.2...3.6V Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
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В кошику од. на суму грн. | |||||||||
| IS62WV20488BLL-25MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Operating voltage: 2.4...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 25ns |
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В кошику од. на суму грн. | |||||||||
| IS62WV20488FBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Operating voltage: 2.2...3.6V Case: VFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
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В кошику од. на суму грн. | |||||||||
| IS62WV25616BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.5...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
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В кошику од. на суму грн. | |||||||||
| IS62WV25616EALL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 1.65...2.2V Case: VFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
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В кошику од. на суму грн. | |||||||||
| IS62WV25616EALL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 1.65...2.2V Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
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В кошику од. на суму грн. | |||||||||
| IS62WV25616EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.2...3.6V Case: VFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
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В кошику од. на суму грн. | |||||||||
| IS62WV2568BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Operating voltage: 2.5...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV2568BLL-55HLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Operating voltage: 2.5...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV2568EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV2568EBLL-45HLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV2568EBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43LD16128B-25BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: 0...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Kind of memory: LPDDR2; SDRAM Memory organisation: 16Mx8bitx8 Access time: 18ns Clock frequency: 400MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43LD16128B-25BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: 0...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Kind of memory: LPDDR2; SDRAM Memory organisation: 16Mx8bitx8 Access time: 18ns Clock frequency: 400MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| IS43R16800E-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
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В кошику
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| IS43R16800E-5TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
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В кошику
од. на суму грн.
| IS43R16800E-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
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В кошику
од. на суму грн.
| IS43R16800E-6TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
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В кошику
од. на суму грн.
| IS43R86400F-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
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В кошику
од. на суму грн.
| IS43R86400F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
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В кошику
од. на суму грн.
| IS46R16160F-5TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
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В кошику
од. на суму грн.
| IS46R16160F-6TLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
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В кошику
од. на суму грн.
| IS43R16160F-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
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В кошику
од. на суму грн.
| IS43R16160F-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
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В кошику
од. на суму грн.
| IS43R16160F-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
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В кошику
од. на суму грн.
| IS43R16160F-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
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В кошику
од. на суму грн.
| IS43R16160F-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
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| IS46R16160F-6BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
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| IS43DR16160B-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
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| IS43DR16160B-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
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од. на суму грн.
| IS43DR16160B-25DBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
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В кошику
од. на суму грн.
| IS43DR16160B-37CBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 266MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 266MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
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В кошику
од. на суму грн.
| IS43DR16160B-37CBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 266MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 266MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
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| IS43DR16160B-3DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
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В кошику
од. на суму грн.
| IS43DR16160B-3DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.9V DC
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од. на суму грн.
| IS43DR16160B-3DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
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од. на суму грн.
| IS43DR16160B-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
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В кошику
од. на суму грн.
| IS43DR16160B-37CBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 266MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 266MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 266MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
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од. на суму грн.
| IS46DR16160B-25DBLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 400MHz
Access time: 12.5ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
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В кошику
од. на суму грн.
| IS46DR16160B-3DBLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
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| IS46DR16160B-3DBLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 333MHz; 15ns; TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 333MHz
Access time: 15ns
Case: TWBGA84
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.9V DC
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од. на суму грн.
| IS62WV2568BLL-55HLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
на замовлення 173 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 164.23 грн |
| 5+ | 147.14 грн |
| 8+ | 115.72 грн |
| 22+ | 109.59 грн |
| IS62WV1288BLL-55HLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
на замовлення 234 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.50 грн |
| 5+ | 128.74 грн |
| 19+ | 124.15 грн |
| 25+ | 119.55 грн |
| IS62WV12816BLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 2.5...3.6V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 2.5...3.6V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.82 грн |
| 5+ | 123.38 грн |
| 20+ | 121.85 грн |
| 25+ | 117.25 грн |
| IS62WV12816BLL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 42 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 129.57 грн |
| 5+ | 115.72 грн |
| 21+ | 114.95 грн |
| 25+ | 110.35 грн |
| IS62WV2568BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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| IS62WV6416BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; MBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.5...3.6V
Case: MBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; MBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.5...3.6V
Case: MBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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| IS62WVS1288FBLL-20NLI |
|
Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.2...3.6V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.2...3.6V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS62WV25616EBLL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.2...3.6V
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.2...3.6V
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 45ns
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од. на суму грн.
| IS62WV102416ALL-35MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 1.65...2.2V
Access time: 35ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 1.65...2.2V
Access time: 35ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS62WV102416ALL-35TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 1.65...2.2V
Access time: 35ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 1.65...2.2V
Access time: 35ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS62WV102416BLL-25MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS62WV102416BLL-25TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 25ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 25ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS62WV10248BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 2.5...3.6V
Case: miniBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 2.5...3.6V
Case: miniBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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| IS62WV10248EBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 2.2...3.6V
Case: VFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 2.2...3.6V
Case: VFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV12816BLL-55B2LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS62WV12816BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS62WV12816EALL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 1.65÷2.2V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 1.65...2.2V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 1.65÷2.2V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 1.65...2.2V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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| IS62WV1288BLL-55QLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Case: SOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Case: SOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
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| IS62WV1288FBLL-45HLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.2...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.2...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV1288FBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.2...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.2...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV20488BLL-25MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 25ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 25ns
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| IS62WV20488FBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Operating voltage: 2.2...3.6V
Case: VFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Operating voltage: 2.2...3.6V
Case: VFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV25616BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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| IS62WV25616EALL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 1.65...2.2V
Case: VFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 1.65...2.2V
Case: VFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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| IS62WV25616EALL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 1.65...2.2V
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 1.65...2.2V
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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| IS62WV25616EBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.2...3.6V
Case: VFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.2...3.6V
Case: VFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV2568BLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
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| IS62WV2568BLL-55HLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
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| IS62WV2568EBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV2568EBLL-45HLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV2568EBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
товару немає в наявності
В кошику
од. на суму грн.
| IS43LD16128B-25BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Kind of memory: LPDDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 18ns
Clock frequency: 400MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Kind of memory: LPDDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 18ns
Clock frequency: 400MHz
товару немає в наявності
В кошику
од. на суму грн.
| IS43LD16128B-25BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Kind of memory: LPDDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 18ns
Clock frequency: 400MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Kind of memory: LPDDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 18ns
Clock frequency: 400MHz
товару немає в наявності
В кошику
од. на суму грн.