| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IS25WP256D-JMLE | ISSI |
 Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 104MHz Operating voltage: 1.65...1.95V Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS25WP256D-RHLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 104MHz Operating voltage: 1.65...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
IS25LQ512B-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial Type of integrated circuit: FLASH memory Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating voltage: 2.3...3.6V Memory: 512kb FLASH Operating frequency: 104MHz Interface: SPI Kind of memory: NOR Kind of interface: serial |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
|
||||||||
 |
IS65WV1288BLL-55HLA1 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
|
||||||||
 |
IS66WVS1M8BLL-104NLI | ISSI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Operating voltage: 3V Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS61WV10248BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61WV10248BLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61WV10248EDBLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61WV10248EDBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42SM32800K-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Supply voltage: 2.7...3.6V DC Clock frequency: 166MHz Memory organisation: 2Mx32bitx4 Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Operating temperature: -40...85°C Access time: 6ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42SM32800K-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Supply voltage: 2.7...3.6V DC Clock frequency: 133MHz Memory organisation: 2Mx32bitx4 Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Operating temperature: -40...85°C Access time: 7.5ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42SM32800K-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Supply voltage: 2.7...3.6V DC Clock frequency: 133MHz Memory organisation: 2Mx32bitx4 Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Operating temperature: -40...85°C Access time: 7.5ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42VM32800K-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Supply voltage: 1.7...1.95V DC Clock frequency: 166MHz Memory organisation: 2Mx32bitx4 Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Operating temperature: -40...85°C Access time: 6ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42VM32800K-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Supply voltage: 1.7...1.95V DC Clock frequency: 133MHz Memory organisation: 2Mx32bitx4 Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Operating temperature: -40...85°C Access time: 7.5ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
IS42S16320D-7TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS61C5128AS-25QLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 5V Access time: 25ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS65C1024AL-45QLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 45ns; SOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 45ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS65C1024AL-45QLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 45ns; SOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 45ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV5128BLL-55QLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV5128EBLL-45QLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.2...3.6V Access time: 45ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
|
IS42S16400J-7TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS42S16400J-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 3.3VDC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS42S16400J-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S16400J-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S16400J-7BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61WV102416BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61WV102416BLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R86400F-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S86400F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 6ns Supply voltage: 3...3.6V DC Clock frequency: 167MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S86400F-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 6ns Supply voltage: 3...3.6V DC Clock frequency: 167MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S86400F-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 6ns Supply voltage: 3...3.6V DC Clock frequency: 167MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S86400F-7TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 7ns Supply voltage: 3...3.6V DC Clock frequency: 143MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S86400F-7TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 7ns Supply voltage: 3...3.6V DC Clock frequency: 143MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS42S86400F-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 7ns Supply voltage: 3...3.6V DC Clock frequency: 143MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R86400F-5BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R86400F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR86400E-25DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Operating temperature: 0...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 12.5ns Supply voltage: 1.7...1.9V DC Clock frequency: 400MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR86400E-25DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 12.5ns Supply voltage: 1.7...1.9V DC Clock frequency: 400MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR86400E-3DBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: 0...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR86400E-3DBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR86400E-3DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43DR86400E-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 12.5ns Supply voltage: 1.7...1.9V DC Clock frequency: 400MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
IS61VVF409618B-7.5TQL | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; 7.5ns; TQFP100; parallel Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TQFP100 Kind of package: in-tray; tube Mounting: SMD Kind of interface: parallel Operating temperature: 0...70°C Access time: 7.5ns Operating voltage: 1.8V Memory: 72Mb SRAM Memory organisation: 4Mx18bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS43LR16200D-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 32Mb DRAM Memory organisation: 1Mx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS34ML04G081-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 4Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Case: TSOP48 Kind of interface: parallel Interface: parallel 8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LF12836EC-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Operating voltage: 3.3V Access time: 6.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43LQ32256A-062BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA200 Operating temperature: -40...95°C Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC Clock frequency: 1.6GHz Memory organisation: 256Mx16bitx2 Memory: 8Gb DRAM Kind of memory: DRAM; LPDDR4; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
|
IS42S16160G-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS42S16160J-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS42S16160G-7TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS42S16800F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS42S16100H-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
|
IS42S16160G-7TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS42S16320D-7TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS42S16320D-7TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS42S16320F-7TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 143MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 32Mx16bit Clock frequency: 143MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS42S16800F-6TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS42S16800F-7TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS42S16800F-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS42S16100H-7TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. |
| IS25WP256D-JMLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 104MHz
Operating voltage: 1.65...1.95V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 104MHz
Operating voltage: 1.65...1.95V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
товару немає в наявності
В кошику
од. на суму грн.
| IS25WP256D-RHLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 104MHz
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 104MHz
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
товару немає в наявності
В кошику
од. на суму грн.
| IS25LQ512B-JKLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 2.3...3.6V
Memory: 512kb FLASH
Operating frequency: 104MHz
Interface: SPI
Kind of memory: NOR
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 2.3...3.6V
Memory: 512kb FLASH
Operating frequency: 104MHz
Interface: SPI
Kind of memory: NOR
Kind of interface: serial
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.68 грн |
| IS65WV1288BLL-55HLA1 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
на замовлення 134 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 296.88 грн |
| 5+ | 215.03 грн |
| 12+ | 203.21 грн |
| 100+ | 200.06 грн |
| IS66WVS1M8BLL-104NLI |
|
Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 3V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 3V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV10248BLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV10248BLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV10248EDBLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV10248EDBLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS42SM32800K-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Supply voltage: 2.7...3.6V DC
Clock frequency: 166MHz
Memory organisation: 2Mx32bitx4
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Operating temperature: -40...85°C
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Supply voltage: 2.7...3.6V DC
Clock frequency: 166MHz
Memory organisation: 2Mx32bitx4
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Operating temperature: -40...85°C
Access time: 6ns
товару немає в наявності
В кошику
од. на суму грн.
| IS42SM32800K-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Operating temperature: -40...85°C
Access time: 7.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Operating temperature: -40...85°C
Access time: 7.5ns
товару немає в наявності
В кошику
од. на суму грн.
| IS42SM32800K-75BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Operating temperature: -40...85°C
Access time: 7.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Operating temperature: -40...85°C
Access time: 7.5ns
товару немає в наявності
В кошику
од. на суму грн.
| IS42VM32800K-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Memory organisation: 2Mx32bitx4
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Operating temperature: -40...85°C
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Memory organisation: 2Mx32bitx4
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Operating temperature: -40...85°C
Access time: 6ns
товару немає в наявності
В кошику
од. на суму грн.
| IS42VM32800K-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 1.7...1.95V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Operating temperature: -40...85°C
Access time: 7.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Supply voltage: 1.7...1.95V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Operating temperature: -40...85°C
Access time: 7.5ns
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16320D-7TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS61C5128AS-25QLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS65C1024AL-45QLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 45ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 45ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS65C1024AL-45QLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 45ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 45ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS62WV5128BLL-55QLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS62WV5128EBLL-45QLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16400J-7TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16400J-7TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 3.3VDC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 3.3VDC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16400J-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16400J-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16400J-7BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV102416BLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV102416BLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS43R86400F-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS42S86400F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS42S86400F-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS42S86400F-6TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS42S86400F-7TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS42S86400F-7TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS42S86400F-7TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43R86400F-5BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43R86400F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43DR86400E-25DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43DR86400E-25DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43DR86400E-3DBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43DR86400E-3DBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43DR86400E-3DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43DR86400E-25DBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS61VVF409618B-7.5TQL |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; 7.5ns; TQFP100; parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Kind of package: in-tray; tube
Mounting: SMD
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 7.5ns
Operating voltage: 1.8V
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; 7.5ns; TQFP100; parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Kind of package: in-tray; tube
Mounting: SMD
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 7.5ns
Operating voltage: 1.8V
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
товару немає в наявності
В кошику
од. на суму грн.
| IS43LR16200D-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS34ML04G081-TLI |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
товару немає в наявності
В кошику
од. на суму грн.
| IS61LF12836EC-6.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Operating voltage: 3.3V
Access time: 6.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Operating voltage: 3.3V
Access time: 6.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS43LQ32256A-062BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA200
Operating temperature: -40...95°C
Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC
Clock frequency: 1.6GHz
Memory organisation: 256Mx16bitx2
Memory: 8Gb DRAM
Kind of memory: DRAM; LPDDR4; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA200
Operating temperature: -40...95°C
Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC
Clock frequency: 1.6GHz
Memory organisation: 256Mx16bitx2
Memory: 8Gb DRAM
Kind of memory: DRAM; LPDDR4; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16160G-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16160J-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16160G-7TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16800F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16100H-7TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16160G-7TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16320D-7TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16320D-7TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16320F-7TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 143MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 143MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16800F-6TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16800F-7TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16800F-7TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16100H-7TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.