| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS43TR16128C-15HBLI | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC |
товар відсутній |
||
| IS43TR16128C-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC |
товар відсутній |
||
| IS43TR16128C-125KBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: 0...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC |
товар відсутній |
||
| IS43TR16128C-15HBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.5V DC |
товар відсутній |
||
| IS43TR16128CL-15HBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: 0...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR16128CL-15HBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR16128CL-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR16128CL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR16128CL-125KBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Operating temperature: 0...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.75ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR16128CL-15HBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR16128CL-15HBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96 Operating temperature: 0...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 128Mx16bit Access time: 13.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb DRAM Clock frequency: 933MHz Mounting: SMD Case: TWBGA96 Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR16128D-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; 0÷95°C Mounting: SMD Supply voltage: 1.5V DC Kind of package: in-tray; tube Operating temperature: 0...95°C Kind of interface: parallel Memory organisation: 128Mx16bit Case: TWBGA96 Kind of memory: DDR3; SDRAM Access time: 13.75ns Type of integrated circuit: DRAM memory Clock frequency: 1066MHz Memory capacity: 2Gb |
товар відсутній |
||
| IS43TR16128D-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; -40÷95°C Mounting: SMD Supply voltage: 1.5V DC Kind of package: in-tray; tube Operating temperature: -40...95°C Kind of interface: parallel Memory organisation: 128Mx16bit Case: TWBGA96 Kind of memory: DDR3; SDRAM Access time: 13.75ns Type of integrated circuit: DRAM memory Clock frequency: 1066MHz Memory capacity: 2Gb |
товар відсутній |
||
| IS43TR16128DL-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; 0÷95°C Mounting: SMD Supply voltage: 1.35V DC Kind of package: in-tray; tube Operating temperature: 0...95°C Kind of interface: parallel Memory organisation: 128Mx16bit Case: TWBGA96 Kind of memory: DDR3L; SDRAM Access time: 13.75ns Type of integrated circuit: DRAM memory Clock frequency: 1066MHz Memory capacity: 2Gb |
товар відсутній |
||
| IS43TR16128DL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; -40÷95°C Mounting: SMD Supply voltage: 1.35V DC Kind of package: in-tray; tube Operating temperature: -40...95°C Kind of interface: parallel Memory organisation: 128Mx16bit Case: TWBGA96 Kind of memory: DDR3L; SDRAM Access time: 13.75ns Type of integrated circuit: DRAM memory Clock frequency: 1066MHz Memory capacity: 2Gb |
товар відсутній |
||
| IS43TR16256B-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96 Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR3; SDRAM Memory organisation: 256Mx16bit Access time: 13.91ns Clock frequency: 1066MHz Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: -40...95°C Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory |
товар відсутній |
||
| IS43TR16256B-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR3; SDRAM Memory organisation: 256Mx16bit Access time: 13.75ns Clock frequency: 1066MHz Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: 0...95°C Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory |
товар відсутній |
||
| IS43TR16256B-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR3; SDRAM Memory organisation: 256Mx16bit Access time: 13.75ns Clock frequency: 1066MHz Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: -40...95°C Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory |
товар відсутній |
||
| IS43TR16256BL-107MBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96 Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx16bit Access time: 13.91ns Clock frequency: 1066MHz Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: 0...95°C Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory |
товар відсутній |
||
| IS43TR16256BL-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Mounting: SMD Kind of package: in-tray; tube Case: TWBGA96 Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx16bit Access time: 13.75ns Clock frequency: 1066MHz Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: 0...95°C Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory |
товар відсутній |
||
| IS43TR16256BL-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx16bit Access time: 13.91ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Gb DRAM Operating temperature: -40...95°C Case: TWBGA96 |
товар відсутній |
||
| IS43TR16256BL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Mounting: SMD Operating temperature: -40...95°C Supply voltage: 1.35V DC Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Gb DRAM Case: TWBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 256Mx16bit Access time: 13.75ns Clock frequency: 1066MHz |
товар відсутній |
||
| IS43TR16512B-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96 Kind of package: in-tray; tube Operating temperature: 0...95°C Case: TWBGA96 Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 512Mx16bit Access time: 13.75ns Clock frequency: 933MHz Kind of interface: parallel Memory: 8Gb DRAM Mounting: SMD |
товар відсутній |
||
| IS43TR16512B-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96 Kind of package: in-tray; tube Operating temperature: -40...95°C Case: TWBGA96 Supply voltage: 1.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 512Mx16bit Access time: 13.75ns Clock frequency: 933MHz Kind of interface: parallel Memory: 8Gb DRAM Mounting: SMD |
товар відсутній |
||
| IS43TR16512BL-107MBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.91ns; TWBGA96 Kind of package: in-tray; tube Operating temperature: 0...95°C Case: TWBGA96 Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx16bit Access time: 13.91ns Clock frequency: 933MHz Kind of interface: parallel Memory: 8Gb DRAM Mounting: SMD |
товар відсутній |
||
| IS43TR16512BL-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96 Kind of package: in-tray; tube Operating temperature: 0...95°C Case: TWBGA96 Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx16bit Access time: 13.75ns Clock frequency: 933MHz Kind of interface: parallel Memory: 8Gb DRAM Mounting: SMD |
товар відсутній |
||
| IS43TR16512BL-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.91ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx16bit Access time: 13.91ns Clock frequency: 933MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 8Gb DRAM Operating temperature: -40...95°C Case: TWBGA96 |
товар відсутній |
||
| IS43TR16512BL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96 Kind of package: in-tray; tube Operating temperature: -40...95°C Case: TWBGA96 Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx16bit Access time: 13.75ns Clock frequency: 933MHz Kind of interface: parallel Memory: 8Gb DRAM Mounting: SMD |
товар відсутній |
||
| IS43TR16640C-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64Mx16bit; 1066MHz; 13.91ns; TWBGA96; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 64Mx16bit Clock frequency: 1066MHz Access time: 13.91ns Case: TWBGA96 Memory capacity: 1Gb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.5V DC |
товар відсутній |
||
| IS43TR16640C-125JBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96 Operating temperature: 0...95°C Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 64Mx16bit Access time: 12.5ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 1Gb DRAM Case: TWBGA96 Supply voltage: 1.5V DC |
товар відсутній |
||
| IS43TR16640C-125JBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96 Operating temperature: -40...95°C Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 64Mx16bit Access time: 12.5ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 1Gb DRAM Case: TWBGA96 Supply voltage: 1.5V DC |
товар відсутній |
||
| IS43TR16640CL-125JBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96 Operating temperature: 0...95°C Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 64Mx16bit Access time: 12.5ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 1Gb DRAM Case: TWBGA96 Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR16640CL-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 13.91ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 64Mx16bit Access time: 13.91ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 1Gb DRAM Operating temperature: -40...95°C Case: TWBGA96 |
товар відсутній |
||
| IS43TR16640CL-125JBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96 Operating temperature: -40...95°C Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 64Mx16bit Access time: 12.5ns Clock frequency: 1066MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 1Gb DRAM Case: TWBGA96 Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR16K01S2AL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96 Kind of package: in-tray; tube Operating temperature: -40...95°C Memory organisation: 1Gx16bit Access time: 13.75ns Clock frequency: 800MHz Kind of interface: parallel Memory: 16Gb DRAM Mounting: SMD Case: LWBGA96 Supply voltage: 1.35V DC Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM |
товар відсутній |
||
| IS43TR16K01S2AL-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Gx16bit; 800MHz; 13.75ns; LWBGA96; 0÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 1Gx16bit Clock frequency: 800MHz Access time: 13.75ns Case: LWBGA96 Memory capacity: 16Gb Mounting: SMD Operating temperature: 0...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR81024B-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC Mounting: SMD Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory organisation: 1Gx8bit Access time: 13.75ns Clock frequency: 933MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 8Gb DRAM Case: TWBGA78 Supply voltage: 1.5V DC |
товар відсутній |
||
| IS43TR81024BL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78 Mounting: SMD Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 1Gx8bit Access time: 13.75ns Clock frequency: 933MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 8Gb DRAM Case: TWBGA78 Supply voltage: 1.35V DC |
товар відсутній |
||
| IS43TR85120BL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 1066MHz Access time: 13.75ns Case: TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
товар відсутній |
||
| IS45S16100H-7BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16100H-7BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16100H-7BLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512kx16bitx2; 143MHz; 7ns; TFBGA60; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Memory capacity: 16Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16100H-7TLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16100H-7TLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512kx16bitx2; 143MHz; 7ns; TSOP50 II; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Memory capacity: 16Mb Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16160J-6BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Clock frequency: 166MHz |
товар відсутній |
||
| IS45S16160J-6BLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Clock frequency: 166MHz |
товар відсутній |
||
| IS45S16160J-6TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Clock frequency: 166MHz |
товар відсутній |
||
| IS45S16160J-6TLA1 -TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16160J-7BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz |
товар відсутній |
||
| IS45S16160J-7BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...105°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz |
товар відсутній |
||
| IS45S16160J-7BLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Case: TFBGA54 Operating temperature: -40...105°C Kind of package: reel; tape Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz |
товар відсутній |
||
| IS45S16160J-7TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz |
товар відсутній |
||
| IS45S16160J-7TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16160J-7TLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...105°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz |
товар відсутній |
||
| IS45S16160J-7TLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Case: TSOP54 II Operating temperature: -40...105°C Kind of package: reel; tape Kind of interface: parallel Memory: 256Mb DRAM Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 7ns Clock frequency: 143MHz |
товар відсутній |
||
| IS45S16320F-6BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16320F-6TLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16320F-6TLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16320F-7BLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товар відсутній |
||
| IS45S16320F-7BLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товар відсутній |
| IS43TR16128C-15HBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній
| IS43TR16128C-125KBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній
| IS43TR16128C-125KBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній
| IS43TR16128C-15HBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній
| IS43TR16128CL-15HBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
товар відсутній
| IS43TR16128CL-15HBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
товар відсутній
| IS43TR16128CL-125KBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
товар відсутній
| IS43TR16128CL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
товар відсутній
| IS43TR16128CL-125KBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.75ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
товар відсутній
| IS43TR16128CL-15HBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
товар відсутній
| IS43TR16128CL-15HBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.5ns; TWBGA96
Operating temperature: 0...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 128Mx16bit
Access time: 13.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb DRAM
Clock frequency: 933MHz
Mounting: SMD
Case: TWBGA96
Supply voltage: 1.35V DC
товар відсутній
| IS43TR16128D-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; 0÷95°C
Mounting: SMD
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; 0÷95°C
Mounting: SMD
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
товар відсутній
| IS43TR16128D-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; -40÷95°C
Mounting: SMD
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; -40÷95°C
Mounting: SMD
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
товар відсутній
| IS43TR16128DL-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; 0÷95°C
Mounting: SMD
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; 0÷95°C
Mounting: SMD
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
товар відсутній
| IS43TR16128DL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; -40÷95°C
Mounting: SMD
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128Mx16bit; 1066MHz; 13.75ns; TWBGA96; -40÷95°C
Mounting: SMD
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 128Mx16bit
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Clock frequency: 1066MHz
Memory capacity: 2Gb
товар відсутній
| IS43TR16256B-107MBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS43TR16256B-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS43TR16256B-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS43TR16256BL-107MBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS43TR16256BL-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Kind of package: in-tray; tube
Case: TWBGA96
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: 0...95°C
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
товар відсутній
| IS43TR16256BL-107MBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Case: TWBGA96
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Gb DRAM
Operating temperature: -40...95°C
Case: TWBGA96
товар відсутній
| IS43TR16256BL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Gb DRAM
Case: TWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.35V DC
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Gb DRAM
Case: TWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 256Mx16bit
Access time: 13.75ns
Clock frequency: 1066MHz
товар відсутній
| IS43TR16512B-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Case: TWBGA96
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Case: TWBGA96
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
товар відсутній
| IS43TR16512B-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Case: TWBGA96
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Case: TWBGA96
Supply voltage: 1.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
товар відсутній
| IS43TR16512BL-107MBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.91ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Case: TWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.91ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.91ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Case: TWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.91ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
товар відсутній
| IS43TR16512BL-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Case: TWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: 0...95°C
Case: TWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
товар відсутній
| IS43TR16512BL-107MBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.91ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.91ns
Clock frequency: 933MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 8Gb DRAM
Operating temperature: -40...95°C
Case: TWBGA96
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.91ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.91ns
Clock frequency: 933MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 8Gb DRAM
Operating temperature: -40...95°C
Case: TWBGA96
товар відсутній
| IS43TR16512BL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Case: TWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Case: TWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx16bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of interface: parallel
Memory: 8Gb DRAM
Mounting: SMD
товар відсутній
| IS43TR16640C-107MBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx16bit; 1066MHz; 13.91ns; TWBGA96; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 64Mx16bit
Clock frequency: 1066MHz
Access time: 13.91ns
Case: TWBGA96
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx16bit; 1066MHz; 13.91ns; TWBGA96; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 64Mx16bit
Clock frequency: 1066MHz
Access time: 13.91ns
Case: TWBGA96
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.5V DC
товар відсутній
| IS43TR16640C-125JBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: 0...95°C
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: 0...95°C
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній
| IS43TR16640C-125JBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: -40...95°C
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: -40...95°C
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
Supply voltage: 1.5V DC
товар відсутній
| IS43TR16640CL-125JBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: 0...95°C
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: 0...95°C
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
Supply voltage: 1.35V DC
товар відсутній
| IS43TR16640CL-107MBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 13.91ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Operating temperature: -40...95°C
Case: TWBGA96
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 13.91ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx16bit
Access time: 13.91ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Operating temperature: -40...95°C
Case: TWBGA96
товар відсутній
| IS43TR16640CL-125JBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: -40...95°C
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Operating temperature: -40...95°C
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 1066MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Gb DRAM
Case: TWBGA96
Supply voltage: 1.35V DC
товар відсутній
| IS43TR16K01S2AL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Memory organisation: 1Gx16bit
Access time: 13.75ns
Clock frequency: 800MHz
Kind of interface: parallel
Memory: 16Gb DRAM
Mounting: SMD
Case: LWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Kind of package: in-tray; tube
Operating temperature: -40...95°C
Memory organisation: 1Gx16bit
Access time: 13.75ns
Clock frequency: 800MHz
Kind of interface: parallel
Memory: 16Gb DRAM
Mounting: SMD
Case: LWBGA96
Supply voltage: 1.35V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
товар відсутній
| IS43TR16K01S2AL-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx16bit; 800MHz; 13.75ns; LWBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx16bit; 800MHz; 13.75ns; LWBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
товар відсутній
| IS43TR81024B-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC
Mounting: SMD
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 8Gb DRAM
Case: TWBGA78
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC
Mounting: SMD
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory organisation: 1Gx8bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 8Gb DRAM
Case: TWBGA78
Supply voltage: 1.5V DC
товар відсутній
| IS43TR81024BL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 1Gx8bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 8Gb DRAM
Case: TWBGA78
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 1Gx8bit
Access time: 13.75ns
Clock frequency: 933MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 8Gb DRAM
Case: TWBGA78
Supply voltage: 1.35V DC
товар відсутній
| IS43TR85120BL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1066MHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
товар відсутній
| IS45S16100H-7BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16100H-7BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16100H-7BLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx16bitx2; 143MHz; 7ns; TFBGA60; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx16bitx2; 143MHz; 7ns; TFBGA60; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16100H-7TLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16100H-7TLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx16bitx2; 143MHz; 7ns; TSOP50 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512kx16bitx2; 143MHz; 7ns; TSOP50 II; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16160J-6BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
товар відсутній
| IS45S16160J-6BLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
товар відсутній
| IS45S16160J-6TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
товар відсутній
| IS45S16160J-6TLA1 -TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16160J-7BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
товар відсутній
| IS45S16160J-7BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
товар відсутній
| IS45S16160J-7BLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
товар відсутній
| IS45S16160J-7TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
товар відсутній
| IS45S16160J-7TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16160J-7TLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
товар відсутній
| IS45S16160J-7TLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 256Mb DRAM
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
товар відсутній
| IS45S16320F-6BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16320F-6TLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16320F-6TLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16320F-7BLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній
| IS45S16320F-7BLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товар відсутній