Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS42S32800J-75ETL-TR | ISSI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS42S32800L-6TL | ISSI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS42S32800J-6BI | ISSI |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS42S32800J-6BI-TR | ISSI |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
IS42S16800J-7BL-TR | ISSI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
637008103A | ISSI | PPAP IS25LQ010B-JULA3-TR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS45S16400J-6BLA1 | ISSI |
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на замовлення 348 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
IS43DR16640B-3DBLI | ISSI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS61LPS204836B-166TQLI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 3.3V Access time: 3.8ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
IS61VPS204836B-250B3L | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 2.5V Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61VPS204836B-250B3LI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 2.5V Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61VVPS204818B-166B3LI | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 1.8V Access time: 3.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61LPS51218B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61LPS51218B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP51218B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP51218B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP102418B-200B3L | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: 0...70°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP102418B-200B3LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP102418B-200B3LI-TR | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP102418B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61NLP102418B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS61NLP204818B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel Kind of interface: parallel Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 2Mx18bit Memory: 36Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS61NVP204818B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel Kind of interface: parallel Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 2.5V Memory organisation: 2Mx18bit Memory: 36Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
IS61WV25616BLS-25TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TSOP44 II Operating temperature: -40...85°C Access time: 25ns Operating voltage: 2.4...3.6V Memory organisation: 256kx16bit Memory: 4Mb SRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS61WV25616BLS-25TLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TSOP44 II Operating temperature: -40...85°C Access time: 25ns Operating voltage: 2.4...3.6V Memory organisation: 256kx16bit Memory: 4Mb SRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS62WV51216BLL-55TLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 3.3V Access time: 55ns Case: TSOP44 Kind of interface: parallel Mounting: SMD |
на замовлення 2943 шт: термін постачання 21-30 дні (днів) |
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IS61QDPB42M36A1-500M3LI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS42S16400J-5TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube Clock frequency: 200MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: tube Memory organisation: 1Mx16bitx4 Kind of interface: parallel Mounting: SMD Access time: 5ns |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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IS42S16400J-6TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C Clock frequency: 166MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: tube Memory organisation: 4Mx16bit Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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IS42S16400J-6TLI | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube Clock frequency: 166MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: -40...85°C Part status: Not recommended for new designs Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: tube Memory organisation: 4Mx16bit Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IS42S16400J-7TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C Clock frequency: 143MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: tube Memory organisation: 4Mx16bit Kind of interface: parallel Mounting: SMD Access time: 7ns |
на замовлення 443 шт: термін постачання 21-30 дні (днів) |
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IS42S32200L-6TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II Clock frequency: 166MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 512kx32bitx4 Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 173 шт: термін постачання 21-30 дні (днів) |
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IS42S32200L-7TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Clock frequency: 143MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 512kx32bitx4 Kind of interface: parallel Mounting: SMD Access time: 7ns |
на замовлення 283 шт: термін постачання 21-30 дні (днів) |
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IS42S32200L-7TLI | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Clock frequency: 143MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: -40...85°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 512kx32bitx4 Kind of interface: parallel Mounting: SMD Access time: 7ns |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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IS42S32400F-6TL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube Clock frequency: 166MHz Memory: 128Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 4Mx32bit Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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IS62WV51216ALL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS62WV51216BLL-55BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS62WV51216EALL-55BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS62WV51216EBLL-45BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.2...3.6V Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS62WV51216ALL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS62WV51216BLL-55BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS62WV51216EBLL-45BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.2...3.6V Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70DLEB | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 70ns Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70DLET | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 70ns Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70FLEB | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 70ns Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70FLET | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 70ns Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70SLEB | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 70ns Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70SLET | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 70ns Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70DLEB-TR | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 70ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70DLET-TR | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 70ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70FLET-TR | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 70ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70SLEB-TR | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 70ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
IS29GL256-70SLET-TR | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 70ns Kind of package: reel; tape |
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IS62C256AL-45ULI | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 45ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 188 шт: термін постачання 21-30 дні (днів) |
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IS64WV51216BLL-10CTLA3 | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
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IS64WV51216BLL-10CTLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
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IS64WV51216BLL-10MLA3 | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
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IS64WV51216BLL-10MLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
IS61WV51216BLL-10MLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
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В кошику од. на суму грн. | |||||||||||
IS61WV51216BLL-10MLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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IS42S32800J-75ETL-TR |
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Виробник: ISSI
8M X 32 256Mb Synchronous DRAM
8M X 32 256Mb Synchronous DRAM
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IS42S32800L-6TL |
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Виробник: ISSI
256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS
256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS
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IS42S32800J-6BI |
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Виробник: ISSI
8M X 32 256MB SYNCHRONOUS DRAM
8M X 32 256MB SYNCHRONOUS DRAM
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IS42S32800J-6BI-TR |
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Виробник: ISSI
8M X 32 256MB Synchronous DRAM
8M X 32 256MB Synchronous DRAM
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IS42S16800J-7BL-TR |
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Виробник: ISSI
128M, 3.3V, SDRAM, 8Mx16, 143Mhz, 54 ball BGA (8mmx8mm) ROHS, T&R
128M, 3.3V, SDRAM, 8Mx16, 143Mhz, 54 ball BGA (8mmx8mm) ROHS, T&R
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637008103A |
Виробник: ISSI
PPAP IS25LQ010B-JULA3-TR
PPAP IS25LQ010B-JULA3-TR
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IS45S16400J-6BLA1 |
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Виробник: ISSI
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V Automotive AEC-Q100 54-Pin TFBGA
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V Automotive AEC-Q100 54-Pin TFBGA
на замовлення 348 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
IS43DR16640B-3DBLI |
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Виробник: ISSI
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin TW-BGA
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin TW-BGA
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IS61LPS204836B-166TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 3.3V
Access time: 3.8ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 3.3V
Access time: 3.8ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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од. на суму грн.
IS61VPS204836B-250B3L |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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В кошику
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IS61VPS204836B-250B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61VVPS204818B-166B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Access time: 3.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Access time: 3.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
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IS61LPS51218B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
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IS61LPS51218B-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
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IS61NLP51218B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
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IS61NLP51218B-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
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IS61NLP102418B-200B3L |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
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IS61NLP102418B-200B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
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IS61NLP102418B-200B3LI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
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IS61NLP102418B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
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IS61NLP102418B-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
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IS61NLP204818B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
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IS61NVP204818B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 2.5V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 2.5V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
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IS61WV25616BLS-25TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
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IS61WV25616BLS-25TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
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IS62WV51216BLL-55TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 3.3V
Access time: 55ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 3.3V
Access time: 55ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
на замовлення 2943 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 468.23 грн |
3+ | 390.67 грн |
7+ | 369.41 грн |
135+ | 356.02 грн |
IS61QDPB42M36A1-500M3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS42S16400J-5TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Clock frequency: 200MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 1Mx16bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Clock frequency: 200MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 1Mx16bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 5ns
на замовлення 49 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 288.40 грн |
5+ | 221.33 грн |
12+ | 208.73 грн |
25+ | 200.85 грн |
IS42S16400J-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 66 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 227.33 грн |
5+ | 186.67 грн |
6+ | 179.58 грн |
15+ | 169.34 грн |
25+ | 165.41 грн |
IS42S16400J-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Part status: Not recommended for new designs
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Part status: Not recommended for new designs
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 177.22 грн |
10+ | 166.98 грн |
25+ | 164.62 грн |
IS42S16400J-7TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
на замовлення 443 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 186.61 грн |
5+ | 167.77 грн |
6+ | 163.83 грн |
16+ | 154.38 грн |
108+ | 148.87 грн |
IS42S32200L-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 173 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 335.90 грн |
3+ | 293.00 грн |
4+ | 259.92 грн |
10+ | 245.75 грн |
25+ | 236.29 грн |
IS42S32200L-7TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
на замовлення 283 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 340.99 грн |
4+ | 259.92 грн |
10+ | 245.75 грн |
108+ | 236.29 грн |
IS42S32200L-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
на замовлення 51 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 319.78 грн |
IS42S32400F-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Clock frequency: 166MHz
Memory: 128Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 4Mx32bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Clock frequency: 166MHz
Memory: 128Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 4Mx32bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 31 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 746.45 грн |
2+ | 501.73 грн |
6+ | 474.16 грн |
IS62WV51216ALL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS62WV51216BLL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS62WV51216EALL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS62WV51216EBLL-45BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS62WV51216ALL-70BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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од. на суму грн.
IS62WV51216BLL-55BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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од. на суму грн.
IS62WV51216EBLL-45BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS29GL256-70DLEB |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
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IS29GL256-70DLET |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
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IS29GL256-70FLEB |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
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IS29GL256-70FLET |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
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IS29GL256-70SLEB |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
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IS29GL256-70SLET |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
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IS29GL256-70DLEB-TR |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: reel; tape
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од. на суму грн.
IS29GL256-70DLET-TR |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: reel; tape
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од. на суму грн.
IS29GL256-70FLET-TR |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: reel; tape
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В кошику
од. на суму грн.
IS29GL256-70SLEB-TR |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: reel; tape
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В кошику
од. на суму грн.
IS29GL256-70SLET-TR |
![]() |
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: reel; tape
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од. на суму грн.
IS62C256AL-45ULI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 188 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 101.61 грн |
10+ | 95.31 грн |
27+ | 89.79 грн |
120+ | 86.64 грн |
IS64WV51216BLL-10CTLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
IS64WV51216BLL-10CTLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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В кошику
од. на суму грн.
IS64WV51216BLL-10MLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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од. на суму грн.
IS64WV51216BLL-10MLA3-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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В кошику
од. на суму грн.
IS61WV51216BLL-10MLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
IS61WV51216BLL-10MLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику
од. на суму грн.