Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS61WV51216EDBLL-10BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16160G-6BL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16160G-6BL-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16160G-6BLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16160G-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43DR82560C-25DBL | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C Case: TWBGA60 Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx8bitx8 Access time: 5ns Clock frequency: 400MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Operating temperature: 0...85°C Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43DR82560C-25DBLI | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60 Case: TWBGA60 Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx8bitx8 Access time: 5ns Clock frequency: 400MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Operating temperature: -40...85°C Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43DR82560C-3DBL | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C Case: TWBGA60 Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx8bitx8 Access time: 5ns Clock frequency: 333MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Operating temperature: 0...85°C Supply voltage: 1.7...1.9V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS34ML02G081-TLI | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Flash Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Interface: parallel 8bit Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS34ML02G081-TLI-TR | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Flash Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Interface: parallel 8bit Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS34ML04G081-TLI | ISSI |
![]() Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Flash Memory: 4Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Case: TSOP48 Interface: parallel 8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS42S16100H-7TLI | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 217 шт: термін постачання 21-30 дні (днів) |
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IS42S16800F-7TLI | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3.3V DC Clock frequency: 143MHz Kind of package: tube |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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IS42S16800F-6TLI | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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IS42S16800F-7TL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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IS34ML02G084-TLI-TR | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Case: TSOP48 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of memory: NAND Flash Kind of interface: parallel Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Interface: parallel 8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS34MW02G084-TLI-TR | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Case: TSOP48 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of memory: NAND Flash Kind of interface: parallel Memory: 2Gb FLASH Operating voltage: 1.7...1.95V Interface: parallel 8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS34ML02G084-TLI | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Case: TSOP48 Mounting: SMD Operating temperature: -40...85°C Kind of memory: NAND Flash Kind of interface: parallel Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Interface: parallel 8bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IS25WP016D-JKLE | ISSI |
![]() Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Interface: DTR; QPI; SPI Kind of memory: NOR Flash Operating frequency: 133MHz Dimensions: 6x5mm Kind of interface: serial Memory: 16Mb FLASH Operating voltage: 1.65...1.95V Case: WSON8 |
на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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IS61LPD51236A-250B3LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 2.6ns; PBGA165 Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 2.6ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Mounting: SMD Case: PBGA165 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61LPS12836A-250TQL | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 2.6ns; QFP100; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 2.6ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Mounting: SMD Case: QFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61QDPB42M36A2-500M3LI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx36bit Kind of package: in-tray; tube Kind of interface: parallel Memory: 72Mb SRAM Mounting: SMD Case: LFBGA165 Operating voltage: 1.8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS25WP080D-JBLE | ISSI |
![]() Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IS25WP080D-JBLE-TR | ISSI |
![]() Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IS25WP080D-JNLE-TR | ISSI |
![]() Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
IS25WP080D-JULE-TR | ISSI |
![]() Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61NLP102418B-250B3L | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Operating voltage: 3.3V Access time: 2.6ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61NLP102418B-250B3LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Operating voltage: 3.3V Access time: 2.6ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LF12832A-7.5TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C Case: QFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LF12832A-7.5TQLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C Case: QFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LPS12832A-200TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 3.1ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LPS12832A-200TQLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 3.1ns Kind of package: reel; tape Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS62WV5128BLL-55BLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS62WV5128BLL-55QLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Case: SOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS62WV5128BLL-55BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TFBGA36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS62WV5128BLL-55QLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS62WV5128BLL-55HLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS62WV5128BLL-55T2LI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP32 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS62WV5128BLL-55TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS62C256AL-45TLI | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 45ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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IS62C256AL-25ULI | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 25ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS62C25616BL-45TLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 5V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS62C256AL-25ULI-TR | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 25ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS62C256AL-45TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 45ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS62C256AL-45ULI-TR | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32x8bit; 5V; 45ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32x8bit Operating voltage: 5V Access time: 45ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
IS62C25616BL-45TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 5V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LF12832EC-7.5TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Mb SRAM Operating temperature: -40...125°C Case: QFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LF12836A-7.5B3LA3-TR | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...125°C Case: TFBGA165 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61LF12836A-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...85°C Case: QFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61LF12836A-7.5TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...85°C Case: QFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61LF12836EC-6.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 6.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...85°C Case: QFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LF12836EC-7.5B3LA3 | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...125°C Case: TFBGA165 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61LF12836EC-7.5TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...85°C Case: QFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS61NLF12836A-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...85°C Case: TQFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IS61NLF12836A-7.5TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...85°C Case: TQFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IS66WVS1M8BLL-104NLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Operating voltage: 3V Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
IS61LF25618A-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100 Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Mounting: SMD Case: QFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61LF25618A-7.5TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100 Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Mounting: SMD Case: QFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LF25636A-7.5B3LA3 | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165 Operating temperature: -40...125°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: PBGA165 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS64LF25636A-7.5TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...125°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: TQFP100 Operating voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. |
IS61WV51216EDBLL-10BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
IS43LR16160G-6BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товару немає в наявності
В кошику
од. на суму грн.
IS43LR16160G-6BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товару немає в наявності
В кошику
од. на суму грн.
IS43LR16160G-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товару немає в наявності
В кошику
од. на суму грн.
IS43LR16160G-6BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
товару немає в наявності
В кошику
од. на суму грн.
IS43DR82560C-25DBL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C
Case: TWBGA60
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx8bitx8
Access time: 5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C
Case: TWBGA60
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx8bitx8
Access time: 5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Supply voltage: 1.7...1.9V DC
товару немає в наявності
В кошику
од. на суму грн.
IS43DR82560C-25DBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60
Case: TWBGA60
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx8bitx8
Access time: 5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60
Case: TWBGA60
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx8bitx8
Access time: 5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Supply voltage: 1.7...1.9V DC
товару немає в наявності
В кошику
од. на суму грн.
IS43DR82560C-3DBL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C
Case: TWBGA60
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx8bitx8
Access time: 5ns
Clock frequency: 333MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C
Case: TWBGA60
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx8bitx8
Access time: 5ns
Clock frequency: 333MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Supply voltage: 1.7...1.9V DC
товару немає в наявності
В кошику
од. на суму грн.
IS34ML02G081-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: parallel 8bit
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: parallel 8bit
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
IS34ML02G081-TLI-TR |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: parallel 8bit
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: parallel 8bit
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
IS34ML04G081-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Case: TSOP48
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Case: TSOP48
Interface: parallel 8bit
товару немає в наявності
В кошику
од. на суму грн.
IS42S16100H-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 217 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 148.55 грн |
IS42S16800F-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Clock frequency: 143MHz
Kind of package: tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Clock frequency: 143MHz
Kind of package: tube
на замовлення 108 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 540.56 грн |
3+ | 381.63 грн |
7+ | 360.94 грн |
IS42S16800F-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
на замовлення 104 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 382.93 грн |
4+ | 266.68 грн |
10+ | 252.12 грн |
IS42S16800F-7TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
на замовлення 94 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 289.67 грн |
4+ | 233.73 грн |
11+ | 220.70 грн |
25+ | 212.27 грн |
IS34ML02G084-TLI-TR |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NAND Flash
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NAND Flash
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Interface: parallel 8bit
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IS34MW02G084-TLI-TR |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NAND Flash
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 1.7...1.95V
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NAND Flash
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 1.7...1.95V
Interface: parallel 8bit
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IS34ML02G084-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: NAND Flash
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: NAND Flash
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Interface: parallel 8bit
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IS25WP016D-JKLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Dimensions: 6x5mm
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Dimensions: 6x5mm
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
на замовлення 103 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 77.58 грн |
10+ | 65.14 грн |
16+ | 59.77 грн |
25+ | 57.48 грн |
42+ | 56.71 грн |
100+ | 54.41 грн |
IS61LPD51236A-250B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 2.6ns; PBGA165
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 2.6ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Case: PBGA165
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 2.6ns; PBGA165
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 2.6ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Case: PBGA165
Operating voltage: 3.3V
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IS61LPS12836A-250TQL |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 2.6ns; QFP100; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 2.6ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 2.6ns; QFP100; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 2.6ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
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IS61QDPB42M36A2-500M3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Case: LFBGA165
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Case: LFBGA165
Operating voltage: 1.8V
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IS25WP080D-JBLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
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IS25WP080D-JBLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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IS25WP080D-JNLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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IS25WP080D-JULE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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IS61NLP102418B-250B3L |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 3.3V
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 3.3V
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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IS61NLP102418B-250B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 3.3V
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 3.3V
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS64LF12832A-7.5TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
Operating voltage: 3.3V
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IS64LF12832A-7.5TQLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
Operating voltage: 3.3V
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IS64LPS12832A-200TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
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IS64LPS12832A-200TQLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
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IS62WV5128BLL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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IS62WV5128BLL-55QLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Case: SOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Case: SOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
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IS62WV5128BLL-55BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS62WV5128BLL-55QLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62WV5128BLL-55HLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62WV5128BLL-55T2LI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62WV5128BLL-55TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62C256AL-45TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 63 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 88.89 грн |
IS62C256AL-25ULI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62C25616BL-45TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62C256AL-25ULI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62C256AL-45TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62C256AL-45ULI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32x8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32x8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32x8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32x8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62C25616BL-45TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS64LF12832EC-7.5TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Operating temperature: -40...125°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Operating temperature: -40...125°C
Case: QFP100
Operating voltage: 3.3V
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IS64LF12836A-7.5B3LA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...125°C
Case: TFBGA165
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...125°C
Case: TFBGA165
Operating voltage: 3.3V
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IS61LF12836A-7.5TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
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IS61LF12836A-7.5TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
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IS61LF12836EC-6.5TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 6.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 6.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
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IS64LF12836EC-7.5B3LA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...125°C
Case: TFBGA165
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...125°C
Case: TFBGA165
Operating voltage: 3.3V
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IS61LF12836EC-7.5TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
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IS61NLF12836A-7.5TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
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IS61NLF12836A-7.5TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
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IS66WVS1M8BLL-104NLI |
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Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 3V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 3V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
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IS61LF25618A-7.5TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
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IS61LF25618A-7.5TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
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IS64LF25636A-7.5B3LA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: PBGA165
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: PBGA165
Operating voltage: 3.3V
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IS64LF25636A-7.5TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
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