| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS62WV5128EBLL-45HLI-TR | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 45ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV6416BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP48 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TSOP48 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...3.6V |
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| IS62WV102416DBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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| IS62WV102416DBLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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| IS62WV102416GBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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| IS62WV12816BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
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| IS62WV12816BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...3.6V |
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| IS62WV25616BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
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| IS62WV25616BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...3.6V |
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| IS62WV25616EALL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V |
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| IS62WV2568EBLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.2...3.6V Kind of package: reel; tape Access time: 45ns |
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| IS62WV102416EBLL-45BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV102416EBLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV102416FBLL-45BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Memory capacity: 16Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV25616EBLL-45BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV51216EBLL-45BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV51216EFBLL-45BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV51216EFBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V |
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| IS62WV102416BLL-25MLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 25ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS62WV102416BLL-25TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 25ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS62WV102416DBLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV102416GALL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1Mx16bit; 1.65÷2.2V; 55ns; TSOP48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Memory capacity: 16Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.65...2.2V |
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| IS62WV102416GBLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV12816BLL-55B2LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...3.6V |
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| IS62WV12816EBLL-45BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx16bit; 2.2÷3.6V; 45ns; TFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 45ns Case: TFBGA48 Kind of interface: parallel Memory capacity: 2Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV51216GBLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV12816EBLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV25616EALL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.65...2.2V |
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| IS62WV51216EFBLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV5128EBLL-45T2LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; TSOP32 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 45ns Case: TSOP32 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS64LF12832A-7.5TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Kind of package: in-tray; tube Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 7.5ns Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C Case: QFP100 |
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| IS64LF12832A-7.5TQLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Kind of package: reel; tape Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 7.5ns Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C Case: QFP100 |
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| IS64LPS12832A-200TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Operating temperature: -40...125°C Mounting: SMD Kind of package: in-tray; tube Operating voltage: 3.3V Case: QFP100 Kind of interface: parallel Memory: 4Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 3.1ns |
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| IS64LPS12832A-200TQLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Operating voltage: 3.3V Case: QFP100 Kind of interface: parallel Memory: 4Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 3.1ns |
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| IS61LPS25618A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Mounting: SMD Case: QFP100 Kind of package: in-tray; tube Operating temperature: -40...85°C Memory: 4.5Mb SRAM Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Access time: 3.1ns Kind of interface: parallel |
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| IS61LPS25618EC-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Mounting: SMD Case: QFP100 Kind of package: in-tray; tube Operating temperature: -40...85°C Memory: 4.5Mb SRAM Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Access time: 3.1ns Kind of interface: parallel |
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| IS61LPS25618EC-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Mounting: SMD Case: QFP100 Kind of package: reel; tape Operating temperature: -40...85°C Memory: 4.5Mb SRAM Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Access time: 3.1ns Kind of interface: parallel |
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| IS61QDB42M36A-300M3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V |
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| IS25LP080D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.3...3.6V |
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| IS25WP016D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 1.65...1.95V |
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| IS25WP080D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 1.65...1.95V |
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| IS34MW04G084-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Flash Memory: 4Gb FLASH Interface: parallel 8bit Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7...1.95V |
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| IS66WVC4M16EALL-7010BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.7...1.95V |
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| IS66WVC4M16EALL-7010BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.7...1.95V |
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| IS66WVC4M16ECLL-7010BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Access time: 70ns Case: VFBGA54 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.7...1.95/2.7...3.6V |
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| IS66WVE4M16EALL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V Kind of package: in-tray; tube Access time: 70ns |
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| IS66WVE4M16EALL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V Kind of package: reel; tape Access time: 70ns |
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| IS66WVE4M16EBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.7...3.6V Kind of package: in-tray; tube Access time: 70ns |
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| IS66WVE4M16EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.7...3.6V Kind of package: reel; tape Access time: 70ns |
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| IS66WVE4M16ECLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95/2.7...3.6V Kind of package: in-tray; tube Access time: 70ns |
товар відсутній |
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| IS66WVE4M16ECLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Memory: 64Mb SRAM Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7...1.95/2.7...3.6V Kind of package: reel; tape Case: TFBGA48 Kind of interface: parallel Kind of memory: PSRAM Memory organisation: 4Mx16bit Access time: 70ns |
товар відсутній |
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| IS66WVE4M16TBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.7...3.6V |
товар відсутній |
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| IS66WVE4M16TBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.7...3.6V |
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| IS61QDB24M18A-300M3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V |
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| IS61QDPB44M18A-400M3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V |
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| IS66WVH16M8DALL-166B1LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 128Mb SRAM Memory organisation: 16Mx8bit Case: TFBGA24 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.7...1.95V |
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| IS66WVH16M8DBLL-100B1LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 128Mb SRAM Memory organisation: 16Mx8bit Case: TFBGA24 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.7...3.6V |
товар відсутній |
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| IS66WVO32M8DALL-200BLI | ISSI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 256Mb SRAM Memory organisation: 32Mx8bit Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Operating voltage: 1.8V Kind of package: in-tray; tube |
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| IS66WV1M16EBLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.5...3.6V Kind of package: in-tray; tube Access time: 55ns |
товар відсутній |
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| IS66WV1M16EBLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.5...3.6V Kind of package: reel; tape Access time: 55ns |
товар відсутній |
| IS62WV5128EBLL-45HLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV6416BLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP48 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP48 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP48 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP48 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV102416DBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV102416DBLL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV102416GBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV12816BLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV12816BLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV25616BLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV25616BLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV25616EALL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
товар відсутній
| IS62WV2568EBLL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.2...3.6V
Kind of package: reel; tape
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.2...3.6V
Kind of package: reel; tape
Access time: 45ns
товар відсутній
| IS62WV102416EBLL-45BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV102416EBLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV102416FBLL-45BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV25616EBLL-45BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV51216EBLL-45BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV51216EFBLL-45BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV51216EFBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV102416BLL-25MLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS62WV102416BLL-25TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS62WV102416DBLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV102416GALL-55TLI-TR |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1Mx16bit; 1.65÷2.2V; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.65...2.2V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1Mx16bit; 1.65÷2.2V; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Memory capacity: 16Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.65...2.2V
товар відсутній
| IS62WV102416GBLL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV12816BLL-55B2LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
товар відсутній
| IS62WV12816EBLL-45BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.2÷3.6V; 45ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.2÷3.6V; 45ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV51216GBLL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV12816EBLL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV25616EALL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.65...2.2V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.65...2.2V
товар відсутній
| IS62WV51216EFBLL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV5128EBLL-45T2LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.2÷3.6V; 45ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS64LF12832A-7.5TQLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
товар відсутній
| IS64LF12832A-7.5TQLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: reel; tape
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: reel; tape
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
товар відсутній
| IS64LPS12832A-200TQLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: in-tray; tube
Operating voltage: 3.3V
Case: QFP100
Kind of interface: parallel
Memory: 4Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 3.1ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: in-tray; tube
Operating voltage: 3.3V
Case: QFP100
Kind of interface: parallel
Memory: 4Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 3.1ns
товар відсутній
| IS64LPS12832A-200TQLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 3.3V
Case: QFP100
Kind of interface: parallel
Memory: 4Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 3.1ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 3.3V
Case: QFP100
Kind of interface: parallel
Memory: 4Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 3.1ns
товар відсутній
| IS61LPS25618A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 3.1ns
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 3.1ns
Kind of interface: parallel
товар відсутній
| IS61LPS25618EC-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 3.1ns
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 3.1ns
Kind of interface: parallel
товар відсутній
| IS61LPS25618EC-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Kind of package: reel; tape
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 3.1ns
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Kind of package: reel; tape
Operating temperature: -40...85°C
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 3.1ns
Kind of interface: parallel
товар відсутній
| IS61QDB42M36A-300M3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
| IS25LP080D-JULE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.3...3.6V
товар відсутній
| IS25WP016D-JULE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
товар відсутній
| IS25WP080D-JULE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.65...1.95V
товар відсутній
| IS34MW04G084-TLI |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 4Gb FLASH
Interface: parallel 8bit
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 4Gb FLASH
Interface: parallel 8bit
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
товар відсутній
| IS66WVC4M16EALL-7010BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.7...1.95V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.7...1.95V
товар відсутній
| IS66WVC4M16EALL-7010BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...1.95V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...1.95V
товар відсутній
| IS66WVC4M16ECLL-7010BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.7...1.95/2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.7...1.95/2.7...3.6V
товар відсутній
| IS66WVE4M16EALL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Kind of package: in-tray; tube
Access time: 70ns
товар відсутній
| IS66WVE4M16EALL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Kind of package: reel; tape
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Kind of package: reel; tape
Access time: 70ns
товар відсутній
| IS66WVE4M16EBLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Kind of package: in-tray; tube
Access time: 70ns
товар відсутній
| IS66WVE4M16EBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Kind of package: reel; tape
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Kind of package: reel; tape
Access time: 70ns
товар відсутній
| IS66WVE4M16ECLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95/2.7...3.6V
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95/2.7...3.6V
Kind of package: in-tray; tube
Access time: 70ns
товар відсутній
| IS66WVE4M16ECLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Memory: 64Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95/2.7...3.6V
Kind of package: reel; tape
Case: TFBGA48
Kind of interface: parallel
Kind of memory: PSRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Memory: 64Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95/2.7...3.6V
Kind of package: reel; tape
Case: TFBGA48
Kind of interface: parallel
Kind of memory: PSRAM
Memory organisation: 4Mx16bit
Access time: 70ns
товар відсутній
| IS66WVE4M16TBLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
| IS66WVE4M16TBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
| IS61QDB24M18A-300M3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
| IS61QDPB44M18A-400M3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
| IS66WVH16M8DALL-166B1LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.7...1.95V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.7...1.95V
товар відсутній
| IS66WVH16M8DBLL-100B1LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Case: TFBGA24
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
| IS66WVO32M8DALL-200BLI |
|
Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 256Mb SRAM
Memory organisation: 32Mx8bit
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 1.8V
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 256Mb SRAM
Memory organisation: 32Mx8bit
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 1.8V
Kind of package: in-tray; tube
товар відсутній
| IS66WV1M16EBLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: in-tray; tube
Access time: 55ns
товар відсутній
| IS66WV1M16EBLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: reel; tape
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: reel; tape
Access time: 55ns
товар відсутній