Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS64LF12832A-7.5TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Kind of package: in-tray; tube Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Operating temperature: -40...125°C Access time: 7.5ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit Type of integrated circuit: SRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LF12832A-7.5TQLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Kind of package: reel; tape Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Operating temperature: -40...125°C Access time: 7.5ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit Type of integrated circuit: SRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LPS12832A-200TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 128kx32bit Operating voltage: 3.3V Access time: 3.1ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LPS12832A-200TQLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 128kx32bit Operating voltage: 3.3V Access time: 3.1ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61LPS25618A-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Case: QFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61LPS25618EC-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Case: QFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61LPS25618EC-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Type of integrated circuit: SRAM memory Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Case: QFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LF12832EC-7.5TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Kind of package: in-tray; tube Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Operating temperature: -40...125°C Access time: 7.5ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit Type of integrated circuit: SRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS25WP016D-JKLE | ISSI |
![]() Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating voltage: 1.65...1.95V Memory: 16Mb FLASH Operating frequency: 133MHz Interface: DTR; QPI; SPI Kind of memory: NOR Kind of interface: serial |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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IS25WP080D-JKLE | ISSI |
![]() Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating frequency: 133MHz |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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IS34ML02G081-TLI | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Case: TSOP48 Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 2Gb FLASH Kind of memory: NAND Interface: parallel 8bit Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS34ML02G081-TLI-TR | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Case: TSOP48 Type of integrated circuit: FLASH memory Kind of package: reel; tape Kind of memory: NAND Kind of interface: parallel Interface: parallel 8bit Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 2Gb FLASH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS34ML01G081-BLI | ISSI |
![]() Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 1Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Case: VFBGA63 Kind of interface: parallel Interface: parallel 8bit |
на замовлення 397 шт: термін постачання 21-30 дні (днів) |
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IS34ML01G084-BLI | ISSI |
![]() Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 1Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Case: VFBGA63 Kind of interface: parallel Interface: parallel 8bit |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
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IS34MW01G164-BLI | ISSI |
![]() Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 1Gb FLASH Operating voltage: 1.7...1.95V Mounting: SMD Operating temperature: -40...85°C Case: VFBGA63 Kind of interface: parallel Interface: parallel 8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IS34ML02G084-TLI | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Case: TSOP48 Kind of interface: parallel Interface: parallel 8bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
IS43LR16160G-6BL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16160G-6BL-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16160G-6BLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16160G-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16320C-6BL-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16320C-6BLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16320C-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16400C-6BLI | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: in-tray; tube Kind of memory: LPDDR; SDRAM Kind of interface: parallel Mounting: SMD Case: TFBGA60 Memory organisation: 1Mx16bitx4 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 1.7...1.95V DC Memory: 64Mb DRAM Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16640A-5BL | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 1Gb DRAM Memory organisation: 16Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TWBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16640A-5BL-TR | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 1Gb DRAM Memory organisation: 16Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TWBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16800G-6BL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16800G-6BL-TR | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16800G-6BLI | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR16800G-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR32160C-6BLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR32160C-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR32320B-6BL | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 1Gb DRAM Memory organisation: 8Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: LFBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR32640A-6BL | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 2Gb DRAM Memory organisation: 16Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: WBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR32640A-6BLI | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 2Gb DRAM Memory organisation: 16Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: WBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR32800G-6BL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR32800G-6BLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS43LR32800G-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS42S16100H-6BL-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS42S16100H-6TL-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS42S16100H-7TL-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS42S16100H-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS42S16100H-7BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS64LPS25636A-166TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61LPS25636A-200B3LI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: BGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61LPS25636A-200B3LI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: BGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IS61LPS25636A-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
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IS61LPS25636A-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||
IS61LPS25636B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 256kx36bit |
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В кошику од. на суму грн. | |||||||||||||
IS61LPS25636B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 256kx36bit |
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IS43LD16128B-25BL | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: 0...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 2Gb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 16Mx8bitx8 |
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IS43LD16128B-25BL-TR | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: reel; tape Kind of interface: parallel Operating temperature: 0...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 2Gb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 16Mx8bitx8 |
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IS43LD16320A-25BLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: -40...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 512Mb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 8Mx16bitx4 |
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IS43LD16640C-18BLI | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: -40...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 1Gb DRAM Mounting: SMD Clock frequency: 533MHz Memory organisation: 8Mx16bitx8 |
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В кошику од. на суму грн. | |||||||||||||
IS43LD16640C-25BLI | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: -40...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 1Gb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 8Mx16bitx8 |
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В кошику од. на суму грн. | |||||||||||||
IS43LD16640C-25BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: reel; tape Kind of interface: parallel Operating temperature: -40...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 1Gb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 8Mx16bitx8 |
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IS43TR16K01S2AL-125KBLI | ISSI |
![]() Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 16Gb DRAM Memory organisation: 1Gx16bit Clock frequency: 800MHz Access time: 13.75ns Case: LWBGA96 Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
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В кошику од. на суму грн. | |||||||||||||
IS43TR16K01S2AL-125KBL | ISSI |
![]() Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 16Gb DRAM Memory organisation: 1Gx16bit Clock frequency: 800MHz Access time: 13.75ns Case: LWBGA96 Mounting: SMD Operating temperature: 0...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
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IS61QDB21M18A-250B4LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
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В кошику од. на суму грн. | |||||||||||||
IS61QDB24M18A-250B4LI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
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В кошику од. на суму грн. |
IS64LF12832A-7.5TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
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IS64LF12832A-7.5TQLA3-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: reel; tape
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: reel; tape
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
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IS64LPS12832A-200TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Operating voltage: 3.3V
Access time: 3.1ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Operating voltage: 3.3V
Access time: 3.1ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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IS64LPS12832A-200TQLA3-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Operating voltage: 3.3V
Access time: 3.1ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Operating voltage: 3.3V
Access time: 3.1ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IS61LPS25618A-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
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IS61LPS25618EC-200TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
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IS61LPS25618EC-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
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IS64LF12832EC-7.5TQLA3 |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Type of integrated circuit: SRAM memory
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IS25WP016D-JKLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 1.65...1.95V
Memory: 16Mb FLASH
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Kind of memory: NOR
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 1.65...1.95V
Memory: 16Mb FLASH
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Kind of memory: NOR
Kind of interface: serial
на замовлення 101 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 77.19 грн |
10+ | 65.37 грн |
16+ | 59.07 грн |
25+ | 57.50 грн |
43+ | 55.92 грн |
100+ | 54.35 грн |
IS25WP080D-JKLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating frequency: 133MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating frequency: 133MHz
на замовлення 69 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.46 грн |
25+ | 71.68 грн |
IS34ML02G081-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Kind of memory: NAND
Interface: parallel 8bit
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Kind of memory: NAND
Interface: parallel 8bit
Type of integrated circuit: FLASH memory
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IS34ML02G081-TLI-TR |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Case: TSOP48
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NAND
Kind of interface: parallel
Interface: parallel 8bit
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Case: TSOP48
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NAND
Kind of interface: parallel
Interface: parallel 8bit
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
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IS34ML01G081-BLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
на замовлення 397 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 368.98 грн |
4+ | 283.55 грн |
9+ | 267.80 грн |
100+ | 257.56 грн |
IS34ML01G084-BLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
на замовлення 220 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 243.44 грн |
10+ | 211.09 грн |
220+ | 207.15 грн |
IS34MW01G164-BLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
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IS34ML02G084-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
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IS43LR16160G-6BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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IS43LR16160G-6BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
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IS43LR16160G-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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IS43LR16160G-6BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
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IS43LR16320C-6BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
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IS43LR16320C-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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IS43LR16320C-6BLI-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
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IS43LR16400C-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of memory: LPDDR; SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Memory organisation: 1Mx16bitx4
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of memory: LPDDR; SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Memory organisation: 1Mx16bitx4
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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IS43LR16640A-5BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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IS43LR16640A-5BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
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IS43LR16800G-6BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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IS43LR16800G-6BL-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
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од. на суму грн.
IS43LR16800G-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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IS43LR16800G-6BLI-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
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IS43LR32160C-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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IS43LR32160C-6BLI-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
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IS43LR32320B-6BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 8Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: LFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 8Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: LFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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IS43LR32640A-6BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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IS43LR32640A-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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IS43LR32800G-6BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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од. на суму грн.
IS43LR32800G-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
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В кошику
од. на суму грн.
IS43LR32800G-6BLI-TR |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
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IS42S16100H-6BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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IS42S16100H-6TL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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IS42S16100H-7TL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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IS42S16100H-6BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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IS42S16100H-7BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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IS64LPS25636A-166TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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IS61LPS25636A-200B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: BGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: BGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61LPS25636A-200B3LI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: BGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: BGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS61LPS25636A-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61LPS25636A-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS61LPS25636B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
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IS61LPS25636B-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
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IS43LD16128B-25BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: 0...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 2Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: 0...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 2Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx8
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IS43LD16128B-25BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: 0...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 2Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: 0...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 2Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx8
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IS43LD16320A-25BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 512Mb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 512Mb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx4
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IS43LD16640C-18BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 533MHz
Memory organisation: 8Mx16bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 533MHz
Memory organisation: 8Mx16bitx8
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IS43LD16640C-25BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx8
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IS43LD16640C-25BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx8
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IS43TR16K01S2AL-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 16Gb DRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 16Gb DRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
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IS43TR16K01S2AL-125KBL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 16Gb DRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 16Gb DRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
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IS61QDB21M18A-250B4LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61QDB24M18A-250B4LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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