Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (276833) > Сторінка 1903 з 4614
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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UES1001 | Microchip Technology |
Description: DIODE GEN PURP 50V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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UES1001/TR | Microchip Technology |
Description: DIODE GEN PURP 50V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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UES1002/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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UES1002SM | Microchip Technology |
Description: DIODE GEN PURP A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Supplier Device Package: A, Axial Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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UES1003SM-1 | Microchip Technology |
Description: DIODE GEN PURP 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 150 V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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UES1002SM-1 | Microchip Technology |
Description: DIODE GEN PURP 100V 2A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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UES1001SM | Microchip Technology |
Description: DIODE GEN PURP 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
| UES1003SM/TR | Microchip Technology |
Description: RECTIFIER UFR,FRR Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||
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UES1002SM/TR | Microchip Technology |
Description: DIODE GEN PURP A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Supplier Device Package: A, Axial Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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UES1002SM-1/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 2A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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UES1001SM/TR | Microchip Technology |
Description: DIODE GEN PURP 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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UES1003SM-1/TR | Microchip Technology |
Description: DIODE GEN PURP 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -55°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 150 V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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UES1003 | Microchip Technology |
Description: DIODE GEN PURP 150V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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UES1003/TR | Microchip Technology |
Description: DIODE GEN PURP 150V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
| MPLAD7.5KP13A/TR | Microchip Technology |
Description: 13V, 5%, 8000W, UNI, MINI-PLAD, Packaging: Tape & Reel (TR) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 349A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |||||||
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M5KP13A | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC DO204ARQualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 5000W (5kW) Voltage - Clamping (Max) @ Ipp: 21.5V Voltage - Breakdown (Min): 14.4V Unidirectional Channels: 1 Supplier Device Package: DO-204AR Voltage - Reverse Standoff (Typ): 13V Current - Peak Pulse (10/1000µs): 232A Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AR, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | ||||||
| M5KP13A/TR | Microchip Technology |
Description: TVS 13V 5% 5000W UNI Power Line Protection: No Power - Peak Pulse: 5000W (5kW) Voltage - Clamping (Max) @ Ipp: 21.5V Voltage - Breakdown (Min): 14.4V Unidirectional Channels: 1 Supplier Device Package: P600 Voltage - Reverse Standoff (Typ): 13V Current - Peak Pulse (10/1000µs): 233A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: P600, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |||||||
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AT90USB82-16MUR | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 32VQFNPackaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512 x 8 Core Processor: AVR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 32-VQFN (5x5) Number of I/O: 22 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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AT90USB82-16MUR | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 32VQFNPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512 x 8 Core Processor: AVR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 32-VQFN (5x5) Number of I/O: 22 DigiKey Programmable: Not Verified |
на замовлення 2763 шт: термін постачання 21-31 дні (днів) |
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AT90USB82-16MU | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 32VQFNPackaging: Tray Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512 x 8 Core Processor: AVR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 32-VQFN (5x5) Number of I/O: 22 DigiKey Programmable: Not Verified |
на замовлення 479 шт: термін постачання 21-31 дні (днів) |
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2N2988 | Microchip Technology |
Description: TRANS PNP 100V 1A TO-5AA Power - Max: 5 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-5AA Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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2N2992 | Microchip Technology |
Description: POWER BJT Power - Max: 5 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-5AA Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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2N2990 | Microchip Technology |
Description: TRANS NPN 100V 1A TO-5AA Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Supplier Device Package: TO-5AA Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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2N2994 | Microchip Technology |
Description: POWER BJT Power - Max: 5 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-5AA Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
| 2N2324 | Microchip Technology |
Description: SCR 100V 200UA TO5Qualification: MIL-PRF-19500/276 Voltage - Off State: 100 V Grade: Military Supplier Device Package: TO-5 Voltage - Gate Trigger (Vgt) (Max): 800 mV Current - On State (It (AV)) (Max): 220 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Hold (Ih) (Max): 2 mA Operating Temperature: -65°C ~ 125°C SCR Type: Sensitive Gate Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 2N2324A | Microchip Technology |
Description: SCR 100V 20UA TO5Qualification: MIL-PRF-19500/276 Voltage - Off State: 100 V Grade: Military Supplier Device Package: TO-5 Voltage - Gate Trigger (Vgt) (Max): 600 mV Current - On State (It (AV)) (Max): 220 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Hold (Ih) (Max): 2 mA Operating Temperature: -65°C ~ 125°C SCR Type: Sensitive Gate Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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APT100GF60JU2 | Microchip Technology |
Description: IGBT MOD 600V 120A 416W SOT-227Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 416 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 120 A IGBT Type: NPT Supplier Device Package: SOT-227 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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2N3749 | Microchip Technology |
Description: TRANS NPN 80V 5A TO111 Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: TO-111 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Current - Collector Cutoff (Max): 20µA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
| Jantxv2N3749 | Microchip Technology |
Description: TRANS NPN 80V 5A TO111Qualification: MIL-PRF-19500/315 Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 5 A Grade: Military Supplier Device Package: TO-111 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Current - Collector Cutoff (Max): 20µA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||
| 2N2892 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||
| 2N2877 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 30 W |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||
| 2N3746 | Microchip Technology |
Description: POWER BJT Power - Max: 30 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: TO-111 Transistor Type: PNP Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||
| 2N3744 | Microchip Technology |
Description: POWER BJT Power - Max: 30 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: TO-111 Transistor Type: PNP Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||
| 2N3751 | Microchip Technology |
Description: POWER BJT Power - Max: 30 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: TO-111 Transistor Type: PNP Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||
| 2N5326 | Microchip Technology |
Description: POWER BJT Power - Max: 30 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: TO-111 Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||
| 2N5328 | Microchip Technology |
Description: POWER BJT Power - Max: 30 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 10 A Supplier Device Package: TO-111 Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||
| 2N5411 | Microchip Technology |
Description: POWER BJT Power - Max: 52 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: TO-111 Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Stud Mount Package / Case: TO-111-4, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||
| 2N5410 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 52 W |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||
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DSC1001AI1-049.1520 | Microchip Technology |
Description: MEMS OSC XO 49.1520MHZ CMOS SMDBase Resonator: MEMS Frequency: 49.152 MHz Height - Seated (Max): 0.035" (0.90mm) Current - Supply (Max): 10.5mA Ratings: AEC-Q100 Voltage - Supply: 1.7V ~ 3.6V Frequency Stability: ±50ppm Operating Temperature: -40°C ~ 85°C Type: XO (Standard) Function: Standby (Power Down) Output: CMOS Mounting Type: Surface Mount Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Package / Case: 4-VDFN Exposed Pad Packaging: Strip |
на замовлення 643 шт: термін постачання 21-31 дні (днів) |
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24CS512T-I/Q4B | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8UDFNDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-UDFN (2x3) Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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24CS512T-I/Q4B | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
на замовлення 4346 шт: термін постачання 21-31 дні (днів) |
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24CS512T-I/OT | Microchip Technology |
Description: IC EEPROM 512KBIT I2C SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-5 Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||
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24CS512T-I/OT | Microchip Technology |
Description: IC EEPROM 512KBIT I2C SOT23-5DigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: SOT-23-5 Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 2204 шт: термін постачання 21-31 дні (днів) |
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24CS512T-I/MS | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8MSOPDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-MSOP Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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24CS512T-I/MS | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8MSOPDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-MSOP Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) |
на замовлення 4933 шт: термін постачання 21-31 дні (днів) |
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24CS512T-E/Q4B | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8UDFNDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-UDFN (2x3) Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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24CS512T-E/Q4B | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8UDFNDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-UDFN (2x3) Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 4970 шт: термін постачання 21-31 дні (днів) |
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24CS512T-E/SN | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOICDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOIC Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
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24CS512T-E/SN | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
на замовлення 3043 шт: термін постачання 21-31 дні (днів) |
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24CS512-E/SN | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
на замовлення 329 шт: термін постачання 21-31 дні (днів) |
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24CS512T-E/OT | Microchip Technology |
Description: IC EEPROM 512KBIT I2C SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-5 Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||
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24CS512T-E/OT | Microchip Technology |
Description: IC EEPROM 512KBIT I2C SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-5 Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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24CS512T-I/SM | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOIJPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 3.4 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIJ Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2100 шт В кошику од. на суму грн. | ||||||
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24CS512T-I/SM | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOIJDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOIJ Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 1902 шт: термін постачання 21-31 дні (днів) |
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24CS512T-E/SM | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOIJDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOIJ Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2100 шт В кошику од. на суму грн. | ||||||
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24CS512T-E/SM | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8SOIJDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOIJ Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 1898 шт: термін постачання 21-31 дні (днів) |
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24CS512-E/P | Microchip Technology |
Description: IC EEPROM 512KBIT I2C 8DIPDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-PDIP Memory Format: EEPROM Clock Frequency: 3.4 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
на замовлення 288 шт: термін постачання 21-31 дні (днів) |
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SM16LC05CE3/TR13 | Microchip Technology |
Description: TVS DIODE 5VWM 11VC 16SOPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: 16-SO Bidirectional Channels: 8 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 11V Power - Peak Pulse: 300W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||
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MIC4930YFL-TR | Microchip Technology |
Description: IC REG BUCK ADJ 3A 10DFNPackaging: Tape & Reel (TR) Package / Case: 10-PowerVDFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: Up to 3.3MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 10-DFN (3x4) Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.625V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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MIC4930YFL-TR | Microchip Technology |
Description: IC REG BUCK ADJ 3A 10DFNPackaging: Cut Tape (CT) Package / Case: 10-PowerVDFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: Up to 3.3MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 10-DFN (3x4) Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.625V |
на замовлення 4965 шт: термін постачання 21-31 дні (днів) |
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| UES1001 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| UES1001/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| UES1002/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| UES1002SM |
Виробник: Microchip Technology
Description: DIODE GEN PURP A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| UES1003SM-1 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| UES1002SM-1 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| UES1001SM |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| UES1002SM/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| UES1002SM-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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| UES1001SM/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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Мінімальне замовлення: 100 шт
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| UES1003SM-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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Мінімальне замовлення: 100 шт
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| UES1003 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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Мінімальне замовлення: 100 шт
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| UES1003/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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Мінімальне замовлення: 100 шт
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| MPLAD7.5KP13A/TR |
Виробник: Microchip Technology
Description: 13V, 5%, 8000W, UNI, MINI-PLAD,
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: 13V, 5%, 8000W, UNI, MINI-PLAD,
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Мінімальне замовлення: 200 шт
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| M5KP13A |
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Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO204AR
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: DO-204AR
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 232A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
Description: TVS DIODE 13VWM 21.5VC DO204AR
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: DO-204AR
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 232A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Packaging: Bulk
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Мінімальне замовлення: 200 шт
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| M5KP13A/TR |
Виробник: Microchip Technology
Description: TVS 13V 5% 5000W UNI
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 233A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Description: TVS 13V 5% 5000W UNI
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 13V
Current - Peak Pulse (10/1000µs): 233A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 200 шт
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| AT90USB82-16MUR |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 5000 шт
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| AT90USB82-16MUR |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 2763 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 228.33 грн |
| 25+ | 202.13 грн |
| 100+ | 183.69 грн |
| AT90USB82-16MU |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 479 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 219.01 грн |
| 25+ | 207.52 грн |
| 2N2988 |
Виробник: Microchip Technology
Description: TRANS PNP 100V 1A TO-5AA
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5AA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: TRANS PNP 100V 1A TO-5AA
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5AA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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Мінімальне замовлення: 100 шт
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| 2N2992 |
Виробник: Microchip Technology
Description: POWER BJT
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5AA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: POWER BJT
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5AA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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Мінімальне замовлення: 100 шт
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| 2N2990 |
Виробник: Microchip Technology
Description: TRANS NPN 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Description: TRANS NPN 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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Мінімальне замовлення: 100 шт
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| 2N2994 |
Виробник: Microchip Technology
Description: POWER BJT
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5AA
Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: POWER BJT
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-5AA
Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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Мінімальне замовлення: 100 шт
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| 2N2324 |
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Виробник: Microchip Technology
Description: SCR 100V 200UA TO5
Qualification: MIL-PRF-19500/276
Voltage - Off State: 100 V
Grade: Military
Supplier Device Package: TO-5
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 2 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: SCR 100V 200UA TO5
Qualification: MIL-PRF-19500/276
Voltage - Off State: 100 V
Grade: Military
Supplier Device Package: TO-5
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 2 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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| 2N2324A |
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Виробник: Microchip Technology
Description: SCR 100V 20UA TO5
Qualification: MIL-PRF-19500/276
Voltage - Off State: 100 V
Grade: Military
Supplier Device Package: TO-5
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - On State (It (AV)) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Hold (Ih) (Max): 2 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: SCR 100V 20UA TO5
Qualification: MIL-PRF-19500/276
Voltage - Off State: 100 V
Grade: Military
Supplier Device Package: TO-5
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - On State (It (AV)) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Hold (Ih) (Max): 2 mA
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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| APT100GF60JU2 |
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Виробник: Microchip Technology
Description: IGBT MOD 600V 120A 416W SOT-227
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 416 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 120 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
Description: IGBT MOD 600V 120A 416W SOT-227
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 416 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 120 A
IGBT Type: NPT
Supplier Device Package: SOT-227
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
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| 2N3749 |
Виробник: Microchip Technology
Description: TRANS NPN 80V 5A TO111
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Description: TRANS NPN 80V 5A TO111
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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| Jantxv2N3749 |
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Виробник: Microchip Technology
Description: TRANS NPN 80V 5A TO111
Qualification: MIL-PRF-19500/315
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Grade: Military
Supplier Device Package: TO-111
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Description: TRANS NPN 80V 5A TO111
Qualification: MIL-PRF-19500/315
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Grade: Military
Supplier Device Package: TO-111
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| 2N2892 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| 2N2877 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| 2N3746 |
Виробник: Microchip Technology
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| 2N3744 |
Виробник: Microchip Technology
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| 2N3751 |
Виробник: Microchip Technology
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| 2N5326 |
Виробник: Microchip Technology
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| 2N5328 |
Виробник: Microchip Technology
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-111
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Description: POWER BJT
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-111
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| 2N5411 |
Виробник: Microchip Technology
Description: POWER BJT
Power - Max: 52 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
Description: POWER BJT
Power - Max: 52 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-111
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| 2N5410 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 52 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 52 W
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| DSC1001AI1-049.1520 |
![]() |
Виробник: Microchip Technology
Description: MEMS OSC XO 49.1520MHZ CMOS SMD
Base Resonator: MEMS
Frequency: 49.152 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 10.5mA
Ratings: AEC-Q100
Voltage - Supply: 1.7V ~ 3.6V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 4-VDFN Exposed Pad
Packaging: Strip
Description: MEMS OSC XO 49.1520MHZ CMOS SMD
Base Resonator: MEMS
Frequency: 49.152 MHz
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 10.5mA
Ratings: AEC-Q100
Voltage - Supply: 1.7V ~ 3.6V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Standby (Power Down)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 4-VDFN Exposed Pad
Packaging: Strip
на замовлення 643 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 139.02 грн |
| 10+ | 131.40 грн |
| 50+ | 129.29 грн |
| 24CS512T-I/Q4B |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC EEPROM 512KBIT I2C 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 24CS512T-I/Q4B |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 4346 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 94.75 грн |
| 25+ | 87.02 грн |
| 100+ | 83.33 грн |
| 24CS512T-I/OT |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 24CS512T-I/OT |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: SOT-23-5
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC EEPROM 512KBIT I2C SOT23-5
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: SOT-23-5
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 2204 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.60 грн |
| 24CS512T-I/MS |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 512KBIT I2C 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 91.13 грн |
| 24CS512T-I/MS |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 512KBIT I2C 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
на замовлення 4933 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.63 грн |
| 25+ | 92.20 грн |
| 100+ | 87.75 грн |
| 24CS512T-E/Q4B |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC EEPROM 512KBIT I2C 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 24CS512T-E/Q4B |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC EEPROM 512KBIT I2C 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 4970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.25 грн |
| 24CS512T-E/SN |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 512KBIT I2C 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3300 шт
В кошику
од. на суму грн.
| 24CS512T-E/SN |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 3043 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.63 грн |
| 25+ | 92.20 грн |
| 100+ | 87.75 грн |
| 24CS512-E/SN |
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Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 329 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.63 грн |
| 25+ | 92.20 грн |
| 100+ | 87.75 грн |
| 24CS512T-E/OT |
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Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 24CS512T-E/OT |
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Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.63 грн |
| 25+ | 92.20 грн |
| 100+ | 87.75 грн |
| 24CS512T-I/SM |
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Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 8SOIJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2100 шт
В кошику
од. на суму грн.
| 24CS512T-I/SM |
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Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIJ
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIJ
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 512KBIT I2C 8SOIJ
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIJ
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 1902 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 100.19 грн |
| 25+ | 93.63 грн |
| 100+ | 90.70 грн |
| 24CS512T-E/SM |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIJ
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIJ
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 512KBIT I2C 8SOIJ
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIJ
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2100 шт
В кошику
од. на суму грн.
| 24CS512T-E/SM |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIJ
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIJ
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 512KBIT I2C 8SOIJ
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIJ
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 1898 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 107.18 грн |
| 25+ | 99.56 грн |
| 100+ | 95.13 грн |
| 24CS512-E/P |
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Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8DIP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-PDIP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC EEPROM 512KBIT I2C 8DIP
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-PDIP
Memory Format: EEPROM
Clock Frequency: 3.4 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
на замовлення 288 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 111.06 грн |
| 25+ | 103.24 грн |
| 100+ | 98.82 грн |
| SM16LC05CE3/TR13 |
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Виробник: Microchip Technology
Description: TVS DIODE 5VWM 11VC 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 16-SO
Bidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 5VWM 11VC 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 16-SO
Bidirectional Channels: 8
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 300W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MIC4930YFL-TR |
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Виробник: Microchip Technology
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerVDFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 3.3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-DFN (3x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.625V
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerVDFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 3.3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-DFN (3x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.625V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| MIC4930YFL-TR |
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Виробник: Microchip Technology
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 3.3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-DFN (3x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.625V
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 3.3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-DFN (3x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.625V
на замовлення 4965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 102.52 грн |
| 25+ | 81.34 грн |
| 100+ | 74.38 грн |
















