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AOW-4542P-B-RPUI AudioMicrophones -42DB 1.5VDC .5MA 2.2 KOHM
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
2+172.06 грн
10+138.19 грн
25+110.61 грн
50+100.37 грн
100+94.22 грн
260+89.44 грн
520+88.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOW-4542P-B-RPUI Audio, Inc.Description: MIC COND ANLG OMNI -42DB 0.382"D
Packaging: Bulk
Output Type: Analog
Size / Dimension: 0.382" Dia (9.70mm)
Sensitivity: -42dB ±3dB
Shape: Circular
Type: Electret Condenser
S/N Ratio: 60dB
Termination: PC Pins
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Top
Height (Max): 0.185" (4.70mm)
Part Status: Active
Voltage - Rated: 1.5 V
Impedance: 2.2 kOhms
Current - Supply: 500 µA
Voltage Range: 1.5 V ~ 10 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
2+178.97 грн
10+140.39 грн
25+129.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOW-4544L-C3310-B-RPUI AudioMicrophones -44DB 2VDC .5MA 2.2KOHM
на замовлення 65 шт:
термін постачання 21-30 дні (днів)
2+182.41 грн
10+149.97 грн
25+120.17 грн
50+112.66 грн
100+105.83 грн
520+90.81 грн
1040+88.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOW-4544L-C3310-B-RPUI Audio, Inc.Description: MIC COND ANLG OMNI -44DB 0.382"D
Packaging: Bulk
Output Type: Analog
Size / Dimension: 0.382" Dia (9.70mm)
Sensitivity: -44dB ±3dB
Shape: Circular
Type: Electret Condenser
S/N Ratio: 60dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Top
Height (Max): 0.185" (4.70mm)
Part Status: Active
Voltage - Rated: 2 V
Impedance: 2.2 kOhms
Current - Supply: 500 µA
Voltage Range: 2 V ~ 10 V
на замовлення 128 шт:
термін постачання 21-31 дні (днів)
2+187.42 грн
10+149.93 грн
25+138.46 грн
50+122.13 грн
100+114.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOW-4544P-C3310-B-RPUI AUDIODescription: PUI AUDIO - AOW-4544P-C3310-B-R - Mikrofon, ungerichtet, 50Hz bis 16kHz, 2V DC bis 10V DC, 2.2 kOhm, -44dB, 500µA
tariffCode: 85181000
Empfindlichkeit (dB): -44dB
rohsCompliant: YES
Wandlerfunktion: Mikrofon
Signal-Rausch-Verhältnis (SNR): 60dB
Drain-Strom, max.: 500µA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Frequenzgang, min.: 50Hz
isCanonical: Y
IP-Schutzart: IP57
usEccn: EAR99
Mikrofon: ECM
Richtcharakteristik: Omnidirektional
Versorgungsspannung, min.: 2VDC
Sensorgehäuse/-bauform: Radial bedrahtet
Ausgangsimpedanz: 2.2kohm
euEccn: NLR
Akustischer Übersteuerungspunkt (AOP): -
Frequenzgang, max.: 16kHz
Impedanz: 2.2kohm
Anzahl der Pins: 2Pin(s)
Produktpalette: -
productTraceability: No
Versorgungsspannung, max.: 10VDC
Ausgangsschnittstelle: -
SVHC: No SVHC (21-Jan-2025)
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
4+223.83 грн
5+196.75 грн
10+169.67 грн
20+150.15 грн
40+131.09 грн
65+115.39 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AOW-4544P-C3310-B-RPUI AudioMicrophones -44DB 2VDC .5MA 2.2KOHM
на замовлення 584 шт:
термін постачання 21-30 дні (днів)
2+184.00 грн
10+142.12 грн
25+113.34 грн
50+103.10 грн
100+94.90 грн
260+89.44 грн
520+88.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOW-4544P-C3310-B-RPUI Audio, Inc.Description: MIC COND ANLG OMNI -44DB 0.382"D
Packaging: Bulk
Output Type: Analog
Size / Dimension: 0.382" Dia (9.70mm)
Sensitivity: -44dB ±3dB
Shape: Circular
Type: Electret Condenser
S/N Ratio: 60dB
Termination: PC Pins
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Top
Height (Max): 0.185" (4.70mm)
Voltage - Rated: 2 V
Impedance: 2.2 kOhms
Current - Supply: 500 µA
Voltage Range: 2 V ~ 10 V
на замовлення 397 шт:
термін постачання 21-31 дні (днів)
2+172.06 грн
65+119.73 грн
130+112.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AOW-5024P-HD-F-RPUI AudioMicrophones MICROPHONE -24DB 3VDC
на замовлення 1678 шт:
термін постачання 21-30 дні (днів)
2+305.88 грн
10+232.41 грн
25+188.44 грн
50+179.57 грн
100+152.94 грн
300+152.26 грн
500+140.65 грн
Мінімальне замовлення: 2
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AOW-6540L-RPUI Audio, Inc.Description: MICROPHONE -40 DB 1.5VDC 2KOHM .
Packaging: Box
Output Type: Analog
Size / Dimension: 0.382" Dia (9.70mm)
Sensitivity: -40dB ±3dB @ 94dB SPL
Shape: Round
S/N Ratio: 65dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Top
Height (Max): 0.264" (6.70mm)
Voltage - Rated: 1.5 V
Impedance: 2 kOhms
Current - Supply: 300 µA
Voltage Range: 1.5 V ~ 10 V
Frequency Range: 50 Hz ~ 16 kHz
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AOW101-BGRIDECPushbutton Switches TW FLUSH PB
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AOW101-BGRIDECDescription: TW FLUSH PB
Packaging: Bulk
Part Status: Active
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AOW10N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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AOW10N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V
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AOW10T60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 600V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V
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AOW10T60PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
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AOW110-BGRIDECPushbutton Switches TW FLUSH PB
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AOW110-BGRIDECDescription: TW FLUSH PB
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+3509.46 грн
В кошику  од. на суму  грн.
AOW110-BGRIDECDescription: IDEC - AOW110-BGR - PB SWITCH, SPST, 10A, 110V, PANEL
Schalteranschlüsse: Screw
Betätiger-/Kappenfarbe: Black, Green, Red
Plattenausschnitt (H x B): -
Schalterfunktion: Maintained
IP-Schutzart: IP65
AC-Kontaktstrom, max.: 10
DC-Kontaktstrom, max.: 10
Kontaktspannung V DC: 24
Farbe der Beleuchtung: Non Illuminated
Durchmesser des Frontplattenausschnitts: 22.3
Schaltermontage: Panel Mount
Produktpalette: TW Series
Druckknopf-Betätiger: Round
Kontaktkonfiguration: SPST-NO
Kontaktspannung V AC: 110
SVHC: No SVHC (16-Jul-2019)
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+2935.29 грн
5+2861.21 грн
10+2787.13 грн
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AOW11N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
на замовлення 769 шт:
термін постачання 21-31 дні (днів)
3+152.85 грн
50+71.67 грн
100+64.34 грн
500+48.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AOW11N60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
на замовлення 580 шт:
термін постачання 21-30 дні (днів)
14+31.86 грн
15+28.44 грн
25+27.20 грн
100+26.05 грн
500+24.82 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
AOW11N60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
кількість в упаковці: 1 шт
на замовлення 580 шт:
термін постачання 7-14 дні (днів)
9+35.44 грн
25+32.64 грн
100+31.26 грн
500+29.78 грн
Мінімальне замовлення: 9
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AOW11S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
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AOW11S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V
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AOW120-BGRIDECPushbutton Switches TW FLUSH PB
товару немає в наявності
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AOW120-BGRIDECDescription: TW FLUSH PB
Packaging: Bulk
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AOW125A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 28A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 312.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+374.83 грн
В кошику  од. на суму  грн.
AOW12N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 12A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
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AOW12N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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AOW12N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 12A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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AOW14N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 14A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
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AOW14N50_001Alpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
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AOW15S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 15A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V
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AOW15S60ALPHA & OMEGA SEMICONDUCTORAOW15S60 THT N channel transistors
на замовлення 771 шт:
термін постачання 7-14 дні (днів)
5+72.22 грн
19+64.10 грн
50+61.14 грн
250+60.42 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AOW15S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-262
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AOW15S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 15A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V
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AOW190A60CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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AOW20C60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO262
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AOW20S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
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AOW214E
на замовлення 200 шт:
термін постачання 14-28 дні (днів)
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AOW214EDIP8
на замовлення 200 шт:
термін постачання 14-28 дні (днів)
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AOW222-YIDECDescription: 22MM PUSHBUTTON YELLOW
Packaging: Bulk
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AOW222-YIDECPushbutton Switches 22mm Pushbutton Yellow
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AOW2500Alpha & Omega SemiconductorTrans MOSFET N-CH 150V 152A 3-Pin(3+Tab) TO-262
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AOW2500Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 150V 11.5/152A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 152A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
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AOW2502Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 150V 16A/106A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 75 V
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AOW25S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 25A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V
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AOW284Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 15A/105A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5154 pF @ 40 V
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AOW290Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 17.5/140A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 50 V
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AOW2918Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 13A TO262
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AOW292Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 105A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V
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AOW296Alpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 100V 70A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
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AOW298Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 9A TO262
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AOW29S50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 29A TO262
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AOW360A70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 12A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
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AOW410Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V TO262
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AOW410-BIDECPushbutton Switches 22mm Pushbutton Black
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AOW410-GIDECPushbutton Switches 22mm Pushbutton Green
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AOW410-RIDECPushbutton Switches 22mm Pushbutton Red
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AOW410-SIDECPushbutton Switches 22mm Pushbutton Blue
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AOW410-YIDECPushbutton Switches 22mm Pushbutton Yellow
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AOW411-BIDECPushbutton Switches 22mm Pushbutton Black
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AOW411-GIDECPushbutton Switches 22mm Pushbutton Green
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AOW411-RIDECPushbutton Switches 22mm Pushbutton Red
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AOW411-SIDECPushbutton Switches 22mm Pushbutton Blue
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AOW411-WIDECPushbutton Switches 22mm Pushbutton White
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AOW411-YIDECPushbutton Switches 22mm Pushbutton Yellow
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AOW412-RIDECPushbutton Switches TW PB Maint 40mm Red Mshrm 1NO
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AOW418Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 9.5A/105A TO262
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AOW421-RIDECPushbutton Switches 22mm Pushbutton Red
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AOW480Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 15A TO262
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AOW482Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 11A TO262
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AOW4S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
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AOW4S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-262 T/R
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AOW654NAIS
на замовлення 84 шт:
термін постачання 14-28 дні (днів)
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AOW66412Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 260W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
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AOW66613Alpha & Omega Semiconductor60V N-Channel MOSFET
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AOW66613Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 260W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
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AOW7S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 7A TO262
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AOW7S60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; TO262
Case: TO262
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 8.2nC
On-state resistance: 0.6Ω
Drain current: 5A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 870 шт:
термін постачання 7-14 дні (днів)
6+53.10 грн
7+49.98 грн
25+45.76 грн
100+43.98 грн
Мінімальне замовлення: 6
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AOW7S60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; TO262
Case: TO262
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 8.2nC
On-state resistance: 0.6Ω
Drain current: 5A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Kind of channel: enhancement
на замовлення 870 шт:
термін постачання 21-30 дні (днів)
10+44.25 грн
11+40.11 грн
25+38.13 грн
100+36.65 грн
Мінімальне замовлення: 10
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AOW7S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-262 Tube
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AOW7S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 7A TO262
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AOWA NO-120-NC-BR
Код товару: 205689
Додати до обраних Обраний товар

Різні комплектуючі > Різні комплектуючі 1
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AOWF095A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 38A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V
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AOWF10N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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AOWF10N60CAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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AOWF10N60_GV_001#MAlpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Bulk
Part Status: Last Time Buy
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AOWF10N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V
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AOWF10T60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V
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AOWF10T60PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
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AOWF11A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH TO262F
Packaging: Tape & Reel (TR)
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AOWF11C60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO262F
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AOWF11N60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
кількість в упаковці: 1 шт
на замовлення 687 шт:
термін постачання 7-14 дні (днів)
9+35.44 грн
25+32.54 грн
100+30.97 грн
Мінімальне замовлення: 9
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AOWF11N60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30.6nC
на замовлення 687 шт:
термін постачання 21-30 дні (днів)
14+31.86 грн
15+28.44 грн
25+27.12 грн
100+25.81 грн
Мінімальне замовлення: 14
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AOWF11N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
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AOWF11N70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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AOWF11S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
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AOWF11S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V
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AOWF125A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 28A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 32.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
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AOWF12N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
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AOWF12N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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AOWF12N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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AOWF12T60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 100 V
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AOWF12T60PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 100 V
на замовлення 938 шт:
термін постачання 21-31 дні (днів)
4+85.26 грн
50+62.20 грн
100+59.22 грн
500+49.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AOWF14N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 14A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
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AOWF15S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 15A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V
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AOWF15S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-262F
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AOWF15S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 15A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V
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AOWF160A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 24A TO262F
на замовлення 982 шт:
термін постачання 21-31 дні (днів)
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AOWF190A60Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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AOWF190A60CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tj)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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AOWF20S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
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AOWF240Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 40V 21A/83A
товару немає в наявності
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AOWF25S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 25A TO262F
товару немає в наявності
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AOWF2606Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 13A/51A TO262F
товару немає в наявності
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AOWF296Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 37A TO262F
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AOWF360A70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 29.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
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AOWF380A60CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
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AOWF412Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 7.8A/30A
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
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AOWF450A70Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 100 V
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AOWF4N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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AOWF4S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
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AOWF600A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 8A TO262F
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
3+150.55 грн
10+130.33 грн
100+104.76 грн
500+80.77 грн
Мінімальне замовлення: 3
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AOWF600A70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 8.5A TO262F
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
2+160.53 грн
10+138.54 грн
100+111.38 грн
500+85.88 грн
Мінімальне замовлення: 2
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AOWF600A70FAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 8.5A TO262F
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
2+160.53 грн
10+138.54 грн
100+111.38 грн
500+85.88 грн
Мінімальне замовлення: 2
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AOWF7S60ALPHA & OMEGA SEMICONDUCTORAOWF7S60 THT N channel transistors
на замовлення 956 шт:
термін постачання 7-14 дні (днів)
5+68.72 грн
26+46.15 грн
70+43.69 грн
500+43.63 грн
Мінімальне замовлення: 5
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AOWF7S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 7A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
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AOWF7S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 7A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
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AOWF8N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 8A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
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AOWF9N70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 9A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
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