Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (27502) > Сторінка 131 з 459
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1PS76SB40,135 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 120MA SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 23410 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
1PS76SB70,135 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 70V 70MA SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 10 µA @ 70 V |
на замовлення 322380 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
1PS88SB82,165 | Nexperia USA Inc. |
Description: DIODE ARRAY SCHOTTKY 15V 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 30mA (DC) Supplier Device Package: 6-TSSOP Operating Temperature - Junction: 125°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 mA Current - Reverse Leakage @ Vr: 200 nA @ 1 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
BF820W,135 | Nexperia USA Inc. |
Description: TRANS NPN 300V 0.05A SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V Frequency - Transition: 60MHz Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 200 mW Qualification: AEC-Q101 |
на замовлення 4456 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BST52,135 | Nexperia USA Inc. |
Description: TRANS NPN DARL 80V 1A SOT89 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.3 W |
на замовлення 3850 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PBSS4350SSJ | Nexperia USA Inc. |
Description: TRANS 2NPN 50V 2.7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 750mW Current - Collector (Ic) (Max): 2.7A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 2.7A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Supplier Device Package: 8-SO Part Status: Obsolete |
товар відсутній |
||||||||||||||||||
PBSS5250X,135 | Nexperia USA Inc. |
Description: TRANS PNP 50V 2A SOT89 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W Qualification: AEC-Q100 |
на замовлення 11402 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PMEG4010BEA,135 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 1A SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
на замовлення 8532 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
1PS76SB70,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 70V 70MA SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 10 µA @ 70 V |
на замовлення 11177 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BAS70L,315 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 70V 70MA 2DFN Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: DFN1006-2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 10 µA @ 70 V |
на замовлення 44024 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BAT754L,115 | Nexperia USA Inc. |
Description: DIODE ARR SCHOT 30V 200MA 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: 6-TSSOP Operating Temperature - Junction: 125°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q100 |
на замовлення 11886 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BAT854CW,135 | Nexperia USA Inc. |
Description: DIODE ARR SCHOT 40V 200MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-323 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V Qualification: AEC-Q100 |
на замовлення 36862 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BAV70M,315 | Nexperia USA Inc. |
Description: DIODE ARRAY GP 100V 150MA SOT883 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150mA (DC) Supplier Device Package: SOT-883 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 109089 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BZV90-C6V2,135 | Nexperia USA Inc. |
Description: DIODE ZENER 6.2V 1.5W SOT223 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-223 Grade: Automotive Part Status: Active Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 3 µA @ 4 V Qualification: AEC-Q100 |
на замовлення 3720 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
IP4234CZ6,115 | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 6TSOP Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Capacitance @ Frequency: 2.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 5.5V Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Power - Peak Pulse: 100W Power Line Protection: Yes Part Status: Active |
на замовлення 27302 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
IP4292CZ10-TBR,115 | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 4VC DFN2510A-10 Packaging: Cut Tape (CT) Package / Case: 10-XFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V Supplier Device Package: DFN2510A-10 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 4V (Typ) Power Line Protection: Yes Part Status: Not For New Designs |
на замовлення 23317 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
NX3008NBK,215 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 400MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Power Dissipation (Max): 350mW (Ta), 1.14W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 384043 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
NX3008NBKS,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 0.35A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 445mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 913314 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PBSS4350X,147 | Nexperia USA Inc. |
Description: TRANS NPN 50V 3A SOT89 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.6 W Qualification: AEC-Q100 |
на замовлення 1241 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PBSS5350X,147 | Nexperia USA Inc. |
Description: TRANS PNP 50V 3A SOT89 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.6 W Qualification: AEC-Q100 |
на замовлення 2502 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PESD1LIN,135 | Nexperia USA Inc. |
Description: TVS DIODE 15VWM 24VWM SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TA) Capacitance @ Frequency: 13pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max), 24V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 44V, 70V Power - Peak Pulse: 160W Power Line Protection: No Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
на замовлення 14016 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PESD5V0L1BA,135 | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 33VC SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 75pF @ 1MHz Current - Peak Pulse (10/1000µs): 15A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 33V Power - Peak Pulse: 500W Power Line Protection: No Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q100 |
на замовлення 35821 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PMEG2010EA,135 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 20V 1A SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 25pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 15 V Qualification: AEC-Q100 |
на замовлення 99461 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PMF170XP,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 1A SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 4.5V Power Dissipation (Max): 290mW (Ta), 1.67W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
на замовлення 115305 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PMP5201G,135 | Nexperia USA Inc. |
Description: TRANS 2PNP 45V 0.1A SOT-353 Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 175MHz Supplier Device Package: 5-TSSOP Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
товар відсутній |
||||||||||||||||||
PSMN4R0-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 95A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V |
на замовлення 40500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PSMN4R0-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 95A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V |
на замовлення 42622 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
2N7002BKMB,315 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 450MA DFN1006B-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V |
товар відсутній |
||||||||||||||||||
NX3008NBKMB,315 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 530MA DFN1006B-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V |
на замовлення 19640 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PMDPB58UPE,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 3.6A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 515mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 6-HUSON (2x2) |
на замовлення 16649 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PMPB33XP,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 5.5A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V |
на замовлення 11221 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
PMPB48EP,115 | Nexperia USA Inc. | Description: MOSFET P-CH 30V 4.7A 6DFN |
товар відсутній |
||||||||||||||||||
PMPB11EN,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 9A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
на замовлення 85022 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
2N7002PS,125 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 0.32A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 420mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q100 |
на замовлення 10751 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BC51PA,115 | Nexperia USA Inc. |
Description: TRANS PNP 45V 1A 3HUSON Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 145MHz Supplier Device Package: 3-HUSON (2x2) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 420 mW Qualification: AEC-Q100 |
на замовлення 3383 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BC52-10PA,115 | Nexperia USA Inc. |
Description: TRANS PNP 60V 1A 3HUSON Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 145MHz Supplier Device Package: 3-HUSON (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 420 mW Qualification: AEC-Q100 |
товар відсутній |
||||||||||||||||||
BC52-16PA,115 | Nexperia USA Inc. |
Description: TRANS PNP 60V 1A 3HUSON Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 145MHz Supplier Device Package: 3-HUSON (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 420 mW Qualification: AEC-Q100 |
на замовлення 2846 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BC53PA,115 | Nexperia USA Inc. |
Description: TRANS PNP 80V 1A 3HUSON Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 145MHz Supplier Device Package: 3-HUSON (2x2) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 420 mW |
на замовлення 1496 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BC54-10PA,115 | Nexperia USA Inc. |
Description: TRANS NPN 45V 1A 3HUSON Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 3-HUSON (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 420 mW Qualification: AEC-Q100 |
товар відсутній |
||||||||||||||||||
BC54PA,115 | Nexperia USA Inc. |
Description: TRANS NPN 45V 1A 3HUSON Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 3-HUSON (2x2) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 420 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BSS138AKAR | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 200MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250mA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 22716 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BSS138BKW,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 320MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 254167 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BSS84AKM,315 | Nexperia USA Inc. |
Description: MOSFET P-CH 50V 230MA DFN1006-3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Power Dissipation (Max): 340mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-883 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 33410 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BSS84AKMB,315 | Nexperia USA Inc. |
Description: MOSFET P-CH 50V 230MA DFN1006B-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V |
на замовлення 3167 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BSS84AKV,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 50V 0.17A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 170mA Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
на замовлення 49515 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
IP3254CZ12-6-TTL,1 | Nexperia USA Inc. |
Description: FILTER LC(PI) 18NH/33PF ESD SMD Packaging: Cut Tape (CT) Package / Case: 12-UFDFN Exposed Pad Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: L = 18nH (Total), C = 33pF (Total) Height: 0.022" (0.55mm) Attenuation Value: 30dB @ 1GHz ~ 4GHz Filter Order: 3rd Applications: GSM, LAN, PCS, WAN Technology: LC (Pi) Center / Cutoff Frequency: 145MHz (Cutoff) Resistance - Channel (Ohms): 8 ESD Protection: Yes Number of Channels: 6 Current: 30 mA |
товар відсутній |
||||||||||||||||||
IP3254CZ16-8-TTL,1 | Nexperia USA Inc. |
Description: FILTER LC(PI) 18NH/33PF ESD SMD Packaging: Cut Tape (CT) Package / Case: 16-UFDFN Exposed Pad Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: L = 18nH (Total), C = 33pF (Total) Height: 0.022" (0.55mm) Attenuation Value: 30dB @ 1GHz ~ 4GHz Filter Order: 3rd Applications: GSM, LAN, PCS, WAN Technology: LC (Pi) Center / Cutoff Frequency: 145MHz (Cutoff) Resistance - Channel (Ohms): 8 ESD Protection: Yes Number of Channels: 8 Current: 30 mA |
товар відсутній |
||||||||||||||||||
IP4252CZ8-4-TTL,13 | Nexperia USA Inc. |
Description: FILTER RC(PI) 40 OHM/12PF SMD Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 40Ohms, C = 12pF (Total) Height: 0.022" (0.55mm) Attenuation Value: 12dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: LAN, WAN Technology: RC (Pi) Resistance - Channel (Ohms): 40 ESD Protection: Yes Part Status: Active Number of Channels: 4 |
на замовлення 18168 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
IP4264CZ8-10-TTL,1 | Nexperia USA Inc. |
Description: FILTER RC(PI) ESD SMD Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -30°C ~ 85°C Values: R = 47Ohms, 100Ohms, C = 6pF (Total) Height: 0.022" (0.55mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 47, 100 ESD Protection: Yes Number of Channels: 3 |
товар відсутній |
||||||||||||||||||
IP4264CZ8-20-TTL,1 | Nexperia USA Inc. |
Description: FILTER RC(PI) ESD SMD Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -30°C ~ 85°C Values: R = 47Ohms, 100Ohms, C = 11pF (Total) Height: 0.022" (0.55mm) Attenuation Value: 45dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 47, 100 ESD Protection: Yes Number of Channels: 3 |
товар відсутній |
||||||||||||||||||
IP4285CZ6-TD,125 | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 4.2VC 6TSOP Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.85pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 4.2V (Typ) Power Line Protection: Yes |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
IP4327CX15,135 | Nexperia USA Inc. | Description: TVS DIODE WAFER |
товар відсутній |
||||||||||||||||||
NX3008CBKS,115 | Nexperia USA Inc. |
Description: MOSFET N/P-CH 30V 0.35A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 445mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 34658 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
NX3008CBKV,115 | Nexperia USA Inc. |
Description: MOSFET N/P-CH 30V 0.4A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
на замовлення 14177 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
NX3008NBKW,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 350MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 653312 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
NX3008PBK,215 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 230MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Power Dissipation (Max): 350mW (Ta), 1.14W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 143742 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
NX3008PBKS,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 30V 0.2A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 445mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 279708 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
NX3008PBKV,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 30V 0.22A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
на замовлення 5457 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
NX3008PBKW,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 200MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 87137 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
NX3020NAK,215 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 200MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V |
на замовлення 111564 шт: термін постачання 21-31 дні (днів) |
|
1PS76SB40,135 |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 120MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 120MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 23410 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 19.45 грн |
22+ | 12.9 грн |
100+ | 6.28 грн |
500+ | 4.92 грн |
1000+ | 3.42 грн |
2000+ | 2.96 грн |
5000+ | 2.7 грн |
1PS76SB70,135 |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
на замовлення 322380 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.33 грн |
19+ | 15.19 грн |
100+ | 7.4 грн |
500+ | 5.79 грн |
1000+ | 4.02 грн |
2000+ | 3.49 грн |
5000+ | 3.18 грн |
1PS88SB82,165 |
Виробник: Nexperia USA Inc.
Description: DIODE ARRAY SCHOTTKY 15V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 30mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 mA
Current - Reverse Leakage @ Vr: 200 nA @ 1 V
Description: DIODE ARRAY SCHOTTKY 15V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 30mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 mA
Current - Reverse Leakage @ Vr: 200 nA @ 1 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)BF820W,135 |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 300V 0.05A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS NPN 300V 0.05A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 4456 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.77 грн |
18+ | 16.16 грн |
100+ | 8.18 грн |
500+ | 6.26 грн |
1000+ | 4.64 грн |
2000+ | 3.91 грн |
BST52,135 |
Виробник: Nexperia USA Inc.
Description: TRANS NPN DARL 80V 1A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
Description: TRANS NPN DARL 80V 1A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
на замовлення 3850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 47.54 грн |
10+ | 40.72 грн |
100+ | 31.22 грн |
500+ | 23.16 грн |
1000+ | 18.53 грн |
2000+ | 16.79 грн |
PBSS4350SSJ |
Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 50V 2.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 750mW
Current - Collector (Ic) (Max): 2.7A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 2.7A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: TRANS 2NPN 50V 2.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 750mW
Current - Collector (Ic) (Max): 2.7A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 2.7A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Supplier Device Package: 8-SO
Part Status: Obsolete
товар відсутній
PBSS5250X,135 |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 50V 2A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: AEC-Q100
Description: TRANS PNP 50V 2A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: AEC-Q100
на замовлення 11402 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.77 грн |
16+ | 17.69 грн |
100+ | 10.6 грн |
500+ | 9.21 грн |
1000+ | 6.27 грн |
2000+ | 5.77 грн |
PMEG4010BEA,135 |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 8532 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.53 грн |
15+ | 19.56 грн |
100+ | 9.87 грн |
500+ | 7.56 грн |
1000+ | 5.61 грн |
2000+ | 4.72 грн |
5000+ | 4.43 грн |
1PS76SB70,115 |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
на замовлення 11177 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.33 грн |
19+ | 15.12 грн |
100+ | 7.39 грн |
500+ | 5.79 грн |
1000+ | 4.02 грн |
BAS70L,315 |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 70V 70MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: DFN1006-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Description: DIODE SCHOTTKY 70V 70MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: DFN1006-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
на замовлення 44024 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 19.45 грн |
22+ | 12.69 грн |
100+ | 6.21 грн |
500+ | 4.86 грн |
1000+ | 3.38 грн |
2000+ | 2.93 грн |
5000+ | 2.67 грн |
BAT754L,115 |
Виробник: Nexperia USA Inc.
Description: DIODE ARR SCHOT 30V 200MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q100
Description: DIODE ARR SCHOT 30V 200MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q100
на замовлення 11886 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.09 грн |
15+ | 19.22 грн |
100+ | 9.7 грн |
500+ | 8.07 грн |
1000+ | 6.28 грн |
BAT854CW,135 |
Виробник: Nexperia USA Inc.
Description: DIODE ARR SCHOT 40V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Qualification: AEC-Q100
Description: DIODE ARR SCHOT 40V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Qualification: AEC-Q100
на замовлення 36862 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.09 грн |
15+ | 18.87 грн |
100+ | 9.53 грн |
500+ | 7.3 грн |
1000+ | 5.41 грн |
2000+ | 4.56 грн |
5000+ | 4.28 грн |
BAV70M,315 |
Виробник: Nexperia USA Inc.
Description: DIODE ARRAY GP 100V 150MA SOT883
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA (DC)
Supplier Device Package: SOT-883
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 100V 150MA SOT883
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA (DC)
Supplier Device Package: SOT-883
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 109089 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.13 грн |
28+ | 9.99 грн |
100+ | 4.87 грн |
500+ | 3.81 грн |
1000+ | 2.65 грн |
2000+ | 2.29 грн |
5000+ | 2.09 грн |
BZV90-C6V2,135 |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 1.5W SOT223
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q100
Description: DIODE ZENER 6.2V 1.5W SOT223
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Qualification: AEC-Q100
на замовлення 3720 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.9 грн |
10+ | 32.05 грн |
100+ | 22.25 грн |
500+ | 16.31 грн |
1000+ | 13.25 грн |
2000+ | 11.85 грн |
IP4234CZ6,115 |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 100W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5.5VWM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 100W
Power Line Protection: Yes
Part Status: Active
на замовлення 27302 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.98 грн |
13+ | 23.03 грн |
100+ | 13.82 грн |
500+ | 12 грн |
1000+ | 8.16 грн |
IP4292CZ10-TBR,115 |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 4VC DFN2510A-10
Packaging: Cut Tape (CT)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DFN2510A-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4V (Typ)
Power Line Protection: Yes
Part Status: Not For New Designs
Description: TVS DIODE 5.5VWM 4VC DFN2510A-10
Packaging: Cut Tape (CT)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DFN2510A-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4V (Typ)
Power Line Protection: Yes
Part Status: Not For New Designs
на замовлення 23317 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.86 грн |
11+ | 25.53 грн |
100+ | 15.28 грн |
500+ | 13.28 грн |
1000+ | 9.03 грн |
2000+ | 8.32 грн |
NX3008NBK,215 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 400MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 400MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Qualification: AEC-Q101
на замовлення 384043 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 18.73 грн |
23+ | 12.42 грн |
100+ | 6.06 грн |
500+ | 4.75 грн |
1000+ | 3.3 грн |
NX3008NBKS,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.35A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 0.35A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 913314 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.7 грн |
14+ | 21.16 грн |
100+ | 10.71 грн |
500+ | 8.2 грн |
1000+ | 6.08 грн |
PBSS4350X,147 |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 50V 3A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Qualification: AEC-Q100
Description: TRANS NPN 50V 3A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Qualification: AEC-Q100
на замовлення 1241 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.77 грн |
16+ | 18.04 грн |
100+ | 10.84 грн |
500+ | 9.42 грн |
PBSS5350X,147 |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 50V 3A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Qualification: AEC-Q100
Description: TRANS PNP 50V 3A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Qualification: AEC-Q100
на замовлення 2502 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.26 грн |
14+ | 20.95 грн |
100+ | 10.56 грн |
500+ | 8.78 грн |
PESD1LIN,135 |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 15VWM 24VWM SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max), 24V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 44V, 70V
Power - Peak Pulse: 160W
Power Line Protection: No
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: TVS DIODE 15VWM 24VWM SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max), 24V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 44V, 70V
Power - Peak Pulse: 160W
Power Line Protection: No
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 14016 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.09 грн |
15+ | 19.56 грн |
100+ | 9.86 грн |
500+ | 8.2 грн |
1000+ | 6.38 грн |
2000+ | 5.71 грн |
5000+ | 5.49 грн |
PESD5V0L1BA,135 |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 33VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
Description: TVS DIODE 5VWM 33VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
на замовлення 35821 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.26 грн |
14+ | 20.26 грн |
100+ | 10.21 грн |
500+ | 7.81 грн |
1000+ | 5.8 грн |
2000+ | 4.88 грн |
5000+ | 4.59 грн |
PMEG2010EA,135 |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Qualification: AEC-Q100
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Qualification: AEC-Q100
на замовлення 99461 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.49 грн |
17+ | 16.79 грн |
100+ | 8.46 грн |
500+ | 7.03 грн |
1000+ | 5.47 грн |
2000+ | 4.9 грн |
5000+ | 4.71 грн |
PMF170XP,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Description: MOSFET P-CH 20V 1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
на замовлення 115305 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.61 грн |
19+ | 14.71 грн |
100+ | 7.45 грн |
500+ | 5.7 грн |
1000+ | 4.23 грн |
PMP5201G,135 |
Виробник: Nexperia USA Inc.
Description: TRANS 2PNP 45V 0.1A SOT-353
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: 5-TSSOP
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: TRANS 2PNP 45V 0.1A SOT-353
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: 5-TSSOP
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
товар відсутній
PSMN4R0-30YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 95A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V
Description: MOSFET N-CH 30V 95A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V
на замовлення 40500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 22.63 грн |
3000+ | 19.41 грн |
7500+ | 18.38 грн |
10500+ | 15.98 грн |
37500+ | 15.82 грн |
PSMN4R0-30YLDX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 95A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V
Description: MOSFET N-CH 30V 95A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V
на замовлення 42622 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 53.31 грн |
10+ | 44.26 грн |
100+ | 30.65 грн |
500+ | 24.03 грн |
2N7002BKMB,315 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 450MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Description: MOSFET N-CH 60V 450MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
товар відсутній
NX3008NBKMB,315 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 530MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Description: MOSFET N-CH 30V 530MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
на замовлення 19640 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.21 грн |
17+ | 16.93 грн |
100+ | 8.25 грн |
500+ | 6.46 грн |
1000+ | 4.49 грн |
2000+ | 3.89 грн |
5000+ | 3.55 грн |
PMDPB58UPE,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
на замовлення 16649 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.09 грн |
13+ | 22.89 грн |
100+ | 15.9 грн |
500+ | 11.65 грн |
1000+ | 9.47 грн |
PMPB33XP,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.5A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Description: MOSFET P-CH 20V 5.5A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
на замовлення 11221 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.7 грн |
12+ | 23.79 грн |
100+ | 14.24 грн |
500+ | 12.37 грн |
1000+ | 8.41 грн |
PMPB11EN,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 9A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET N-CH 30V 9A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 85022 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.89 грн |
17+ | 16.86 грн |
100+ | 11.7 грн |
500+ | 8.57 грн |
1000+ | 7.43 грн |
2N7002PS,125 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.32A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
Description: MOSFET 2N-CH 60V 0.32A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
на замовлення 10751 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.81 грн |
15+ | 19.28 грн |
100+ | 9.74 грн |
500+ | 7.45 грн |
1000+ | 5.53 грн |
BC51PA,115 |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q100
Description: TRANS PNP 45V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q100
на замовлення 3383 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.21 грн |
17+ | 17 грн |
100+ | 8.57 грн |
500+ | 7.13 грн |
1000+ | 5.55 грн |
BC52-10PA,115 |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q100
Description: TRANS PNP 60V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q100
товар відсутній
BC52-16PA,115 |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q100
Description: TRANS PNP 60V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q100
на замовлення 2846 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.98 грн |
14+ | 20.88 грн |
100+ | 10.54 грн |
500+ | 8.77 грн |
1000+ | 6.82 грн |
BC53PA,115 |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 80V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
Description: TRANS PNP 80V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
на замовлення 1496 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.37 грн |
14+ | 19.91 грн |
100+ | 12.41 грн |
500+ | 7.97 грн |
1000+ | 6.13 грн |
BC54-10PA,115 |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 45V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q100
Description: TRANS NPN 45V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Qualification: AEC-Q100
товар відсутній
BC54PA,115 |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 45V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Description: TRANS NPN 45V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.93 грн |
16+ | 17.69 грн |
100+ | 8.91 грн |
500+ | 7.41 грн |
1000+ | 5.77 грн |
BSS138AKAR |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 200MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250mA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 200MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250mA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Qualification: AEC-Q101
на замовлення 22716 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 20.89 грн |
21+ | 13.8 грн |
100+ | 6.72 грн |
500+ | 5.26 грн |
1000+ | 3.65 грн |
BSS138BKW,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 320MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 320MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Qualification: AEC-Q101
на замовлення 254167 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.33 грн |
19+ | 15.26 грн |
100+ | 7.69 грн |
500+ | 5.89 грн |
1000+ | 4.37 грн |
BSS84AKM,315 |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 50V 230MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 340mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-883
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 50V 230MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 340mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-883
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Qualification: AEC-Q101
на замовлення 33410 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.21 грн |
17+ | 16.93 грн |
100+ | 8.54 грн |
500+ | 6.53 грн |
1000+ | 4.85 грн |
2000+ | 4.08 грн |
5000+ | 3.84 грн |
BSS84AKMB,315 |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 50V 230MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Description: MOSFET P-CH 50V 230MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
на замовлення 3167 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.65 грн |
16+ | 17.97 грн |
100+ | 9.09 грн |
500+ | 6.96 грн |
1000+ | 5.17 грн |
2000+ | 4.35 грн |
BSS84AKV,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 50V 0.17A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: MOSFET 2P-CH 50V 0.17A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 49515 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.98 грн |
14+ | 21.09 грн |
100+ | 10.65 грн |
500+ | 8.15 грн |
1000+ | 6.05 грн |
2000+ | 5.09 грн |
IP3254CZ12-6-TTL,1 |
Виробник: Nexperia USA Inc.
Description: FILTER LC(PI) 18NH/33PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 18nH (Total), C = 33pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 30dB @ 1GHz ~ 4GHz
Filter Order: 3rd
Applications: GSM, LAN, PCS, WAN
Technology: LC (Pi)
Center / Cutoff Frequency: 145MHz (Cutoff)
Resistance - Channel (Ohms): 8
ESD Protection: Yes
Number of Channels: 6
Current: 30 mA
Description: FILTER LC(PI) 18NH/33PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 18nH (Total), C = 33pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 30dB @ 1GHz ~ 4GHz
Filter Order: 3rd
Applications: GSM, LAN, PCS, WAN
Technology: LC (Pi)
Center / Cutoff Frequency: 145MHz (Cutoff)
Resistance - Channel (Ohms): 8
ESD Protection: Yes
Number of Channels: 6
Current: 30 mA
товар відсутній
IP3254CZ16-8-TTL,1 |
Виробник: Nexperia USA Inc.
Description: FILTER LC(PI) 18NH/33PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 18nH (Total), C = 33pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 30dB @ 1GHz ~ 4GHz
Filter Order: 3rd
Applications: GSM, LAN, PCS, WAN
Technology: LC (Pi)
Center / Cutoff Frequency: 145MHz (Cutoff)
Resistance - Channel (Ohms): 8
ESD Protection: Yes
Number of Channels: 8
Current: 30 mA
Description: FILTER LC(PI) 18NH/33PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 18nH (Total), C = 33pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 30dB @ 1GHz ~ 4GHz
Filter Order: 3rd
Applications: GSM, LAN, PCS, WAN
Technology: LC (Pi)
Center / Cutoff Frequency: 145MHz (Cutoff)
Resistance - Channel (Ohms): 8
ESD Protection: Yes
Number of Channels: 8
Current: 30 mA
товар відсутній
IP4252CZ8-4-TTL,13 |
Виробник: Nexperia USA Inc.
Description: FILTER RC(PI) 40 OHM/12PF SMD
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 12pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 12dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: LAN, WAN
Technology: RC (Pi)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Active
Number of Channels: 4
Description: FILTER RC(PI) 40 OHM/12PF SMD
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 12pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 12dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: LAN, WAN
Technology: RC (Pi)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Active
Number of Channels: 4
на замовлення 18168 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.65 грн |
12+ | 24.7 грн |
25+ | 23.92 грн |
50+ | 21.72 грн |
100+ | 20.59 грн |
250+ | 17.22 грн |
500+ | 13.14 грн |
1000+ | 12.52 грн |
IP4264CZ8-10-TTL,1 |
Виробник: Nexperia USA Inc.
Description: FILTER RC(PI) ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 6pF (Total)
Height: 0.022" (0.55mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Number of Channels: 3
Description: FILTER RC(PI) ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 6pF (Total)
Height: 0.022" (0.55mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Number of Channels: 3
товар відсутній
IP4264CZ8-20-TTL,1 |
Виробник: Nexperia USA Inc.
Description: FILTER RC(PI) ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 11pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 45dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Number of Channels: 3
Description: FILTER RC(PI) ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 11pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 45dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Number of Channels: 3
товар відсутній
IP4285CZ6-TD,125 |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 4.2VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.2V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5.5VWM 4.2VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.2V (Typ)
Power Line Protection: Yes
на замовлення 6 шт:
термін постачання 21-31 дні (днів)NX3008CBKS,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 30V 0.35A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 0.35A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 34658 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.7 грн |
13+ | 21.37 грн |
100+ | 10.82 грн |
500+ | 8.28 грн |
1000+ | 6.14 грн |
NX3008CBKV,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 30V 0.4A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 0.4A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 14177 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.09 грн |
15+ | 18.94 грн |
100+ | 9.57 грн |
500+ | 7.96 грн |
1000+ | 6.19 грн |
2000+ | 5.54 грн |
NX3008NBKW,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 350MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 350MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Qualification: AEC-Q101
на замовлення 653312 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 16.57 грн |
26+ | 10.75 грн |
100+ | 5.27 грн |
500+ | 4.12 грн |
1000+ | 2.86 грн |
NX3008PBK,215 |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 230MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 230MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
Qualification: AEC-Q101
на замовлення 143742 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 17.29 грн |
24+ | 11.65 грн |
100+ | 5.68 грн |
500+ | 4.44 грн |
1000+ | 3.09 грн |
NX3008PBKS,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 30V 0.2A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 0.2A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 279708 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.7 грн |
13+ | 21.37 грн |
100+ | 10.82 грн |
500+ | 8.28 грн |
1000+ | 6.14 грн |
NX3008PBKV,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 30V 0.22A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 0.22A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 5457 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.65 грн |
16+ | 18.24 грн |
100+ | 9.19 грн |
500+ | 7.65 грн |
1000+ | 5.95 грн |
2000+ | 5.33 грн |
NX3008PBKW,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
Qualification: AEC-Q101
на замовлення 87137 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.05 грн |
19+ | 15.33 грн |
100+ | 7.48 грн |
500+ | 5.86 грн |
1000+ | 4.07 грн |
NX3020NAK,215 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 200MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
Description: MOSFET N-CH 30V 200MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
на замовлення 111564 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.13 грн |
28+ | 9.99 грн |
100+ | 4.86 грн |
500+ | 3.81 грн |
1000+ | 2.64 грн |