Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (31404) > Сторінка 199 з 524
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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74AUP1G06GW,125 | Nexperia USA Inc. |
Description: IC INVERTER 1CH 1-INP 5TSSOPPackaging: Tape & Reel (TR) Features: Open Drain Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: -, 4mA Number of Inputs: 1 Supplier Device Package: 5-TSSOP Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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74AUP1G06GW,125 | Nexperia USA Inc. |
Description: IC INVERTER 1CH 1-INP 5TSSOPPackaging: Cut Tape (CT) Features: Open Drain Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: -, 4mA Number of Inputs: 1 Supplier Device Package: 5-TSSOP Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
на замовлення 3376 шт: термін постачання 21-31 дні (днів) |
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TLVH431NACDBZRVL | Nexperia USA Inc. |
Description: IC VREF SHUNT ADJ 1.5% TO236ABPackaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: TO-236AB Voltage - Output (Min/Fixed): 1.24V Part Status: Active Current - Cathode: 80 µA Current - Output: 70 mA Voltage - Output (Max): 14 V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
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TLVH431NACDBZRR | Nexperia USA Inc. |
Description: IC VREF SHUNT ADJ 1.5% TO236ABPackaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: TO-236AB Voltage - Output (Min/Fixed): 1.24V Part Status: Active Current - Cathode: 80 µA Current - Output: 70 mA Voltage - Output (Max): 14 V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ27VCL,215 | Nexperia USA Inc. |
Description: TVS DIODE 22VWM 38VC TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 48pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 22V (Max) Supplier Device Package: TO-236AB Unidirectional Channels: 2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 25.65V Voltage - Clamping (Max) @ Ipp: 38V Power - Peak Pulse: 40W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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NCR420ZX | Nexperia USA Inc. |
Description: IC LED DRVR LIN PWM 150MA SOT223Internal Switch(s): Yes Current - Output / Channel: 150mA Operating Temperature: -55°C ~ 150°C (TA) Type: Linear Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 40V Part Status: Active Voltage - Supply (Max): 40V Dimming: PWM Supplier Device Package: SOT-223 Topology: Linear Qualification: AEC-Q101 Grade: Automotive Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCR420ZX | Nexperia USA Inc. |
Description: IC LED DRVR LIN PWM 150MA SOT223Dimming: PWM Supplier Device Package: SOT-223 Topology: Linear Internal Switch(s): Yes Current - Output / Channel: 150mA Operating Temperature: -55°C ~ 150°C (TA) Type: Linear Voltage - Output: 40V Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Number of Outputs: 1 Mounting Type: Surface Mount Part Status: Active Voltage - Supply (Max): 40V Qualification: AEC-Q101 Grade: Automotive |
на замовлення 252 шт: термін постачання 21-31 дні (днів) |
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NHUMD12F | Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOPVce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 80V Current - Collector (Ic) (Max): 100mA Power - Max: 350mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Current - Collector Cutoff (Max): 100nA Part Status: Active Supplier Device Package: 6-TSSOP Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 170MHz, 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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PMV30ENEAR | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 4.8A TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V Power Dissipation (Max): 710mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| PDTA113EU | Nexperia USA Inc. |
Description: PDTA113E SERIES - PNP RESISTOR-EPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PMH950UPEH | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 530MA DFN0606-3Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: DFN0606-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 370mW (Ta), 2.2W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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PMH950UPEH | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 530MA DFN0606-3Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: DFN0606-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 370mW (Ta), 2.2W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
на замовлення 40634 шт: термін постачання 21-31 дні (днів) |
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PMH550UPEH | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 800MA DFN0606-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.23W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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PMH550UPEH | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 800MA DFN0606-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.23W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V |
на замовлення 6713 шт: термін постачання 21-31 дні (днів) |
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PMZB950UPELYL | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 500MA DFN1006B-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V |
на замовлення 28788 шт: термін постачання 21-31 дні (днів) |
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PMZ350UPEYL | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 1A DFN1006-3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Power Dissipation (Max): 360mW (Ta), 3.125W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V |
на замовлення 580 шт: термін постачання 21-31 дні (днів) |
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PMEG150G20ELRX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 2A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NXS0108BQX | Nexperia USA Inc. |
Description: IC XLTR VL BIDIR 20-DHVQFNPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 110Mbps Supplier Device Package: 20-DHVQFN (4.5x2.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XS3A1T5157GSH | Nexperia USA Inc. |
Description: IC SWITCH SPDT X 1 900MOHM 6XSONPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 900mOhm -3db Bandwidth: 40MHz Supplier Device Package: 6-XSON, SOT1202 (1x1) Voltage - Supply, Single (V+): 1.4V ~ 4.3V Charge Injection: 15pC Crosstalk: -90dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 40ns, 20ns Channel Capacitance (CS(off), CD(off)): 35pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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XS3A1T5157GSH | Nexperia USA Inc. |
Description: IC SWITCH SPDT X 1 900MOHM 6XSONPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 900mOhm -3db Bandwidth: 40MHz Supplier Device Package: 6-XSON, SOT1202 (1x1) Voltage - Supply, Single (V+): 1.4V ~ 4.3V Charge Injection: 15pC Crosstalk: -90dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 40ns, 20ns Channel Capacitance (CS(off), CD(off)): 35pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LVC1G3157GW-Q100,125 | Nexperia USA Inc. |
Description: NOW NEXPERIA 74LVC1G3157GW - SINPart Status: Active Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 74LVC1G3157GW-Q100125 | Nexperia USA Inc. |
Description: NOW NEXPERIA 74LVC1G3157GW - SINPackaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PMEG150G10ELRX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 1A SOD123W Current - Reverse Leakage @ Vr: 30 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 34pF @ 1V, 1MHz Technology: SiGe (Silicon Germanium) Reverse Recovery Time (trr): 15 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC857CW/DG/B4F | Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A SC-70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG060V030EPDZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 3A CFP15Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: Schottky Capacitance @ Vr, F: 350pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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PMEG060V030EPDZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 3A CFP15Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: Schottky Capacitance @ Vr, F: 350pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1330 шт: термін постачання 21-31 дні (днів) |
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BUK7909-75ATE127 | Nexperia USA Inc. |
Description: N-CHANNEL POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUK7909-75ATE,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A TO220-5Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-220-5 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 272W (Tc) FET Feature: Temperature Sensing Diode Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUK7909-75AIE,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A TO220-5Packaging: Tube Package / Case: TO-220-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220-5 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PDZ20B,115 | Nexperia USA Inc. |
Description: DIODE ZENER 20V 400MW SOD323Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 15 V |
на замовлення 2902 шт: термін постачання 21-31 дні (днів) |
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PTVS12VS1UR/8X | Nexperia USA Inc. |
Description: TVS DIODE 12VWM 19.9VC SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 20.1A Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMV52ENEAR | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 3.2A TO236ABVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 630mW (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMV52ENEAR | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 3.2A TO236ABQualification: AEC-Q101 Grade: Automotive Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Power Dissipation (Max): 630mW (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 4303 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZUF | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZUF | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 32533 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZTR | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZTR | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 34143 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZUX | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZUX | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 12483 шт: термін постачання 21-31 дні (днів) |
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PBSS3540E,115 | Nexperia USA Inc. |
Description: TRANS PNP 40V 0.5A SC-75Packaging: Bulk Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 300MHz Supplier Device Package: SC-75 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
на замовлення 95574 шт: термін постачання 21-31 дні (днів) |
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BUK7S1R5-40HJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 260A LFPAK88Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -10V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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BUK7S1R5-40HJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 260A LFPAK88Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -10V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1946 шт: термін постачання 21-31 дні (днів) |
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BUK7S0R9-40HJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 375A LFPAK88Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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BUK7S0R9-40HJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 375A LFPAK88Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMNR90-40SSHJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 375A LFPAK88Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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PSMNR90-40SSHJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 375A LFPAK88Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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PSMNR70-40SSHJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 425A LFPAK88Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 425A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V |
на замовлення 4931 шт: термін постачання 21-31 дні (днів) |
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PTVS7V0S1UR,115 | Nexperia USA Inc. |
Description: TVS DIODE 7VWM 12VC SOD123WQualification: AEC-Q101 Grade: Automotive Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 12V Voltage - Breakdown (Min): 7.78V Unidirectional Channels: 1 Supplier Device Package: SOD-123W Voltage - Reverse Standoff (Typ): 7V Current - Peak Pulse (10/1000µs): 33.3A Operating Temperature: -55°C ~ 150°C (TA) Type: Zener |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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74LVT16374ADGG,118 | Nexperia USA Inc. |
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOPNumber of Bits per Element: 8 Part Status: Active Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF Supplier Device Package: 48-TSSOP Input Capacitance: 3 pF Clock Frequency: 150 MHz Trigger Type: Positive Edge Current - Output High, Low: 32mA, 64mA Current - Quiescent (Iq): 120 µA Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Type: D-Type Function: Standard Number of Elements: 2 Mounting Type: Surface Mount Output Type: Tri-State, Non-Inverted Package / Case: 48-TFSOP (0.240", 6.10mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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74LVT16374ADGG,118 | Nexperia USA Inc. |
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOPNumber of Bits per Element: 8 Part Status: Active Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF Supplier Device Package: 48-TSSOP Input Capacitance: 3 pF Clock Frequency: 150 MHz Trigger Type: Positive Edge Current - Output High, Low: 32mA, 64mA Current - Quiescent (Iq): 120 µA Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Type: D-Type Function: Standard Number of Elements: 2 Mounting Type: Surface Mount Output Type: Tri-State, Non-Inverted Package / Case: 48-TFSOP (0.240", 6.10mm Width) Packaging: Cut Tape (CT) |
на замовлення 572 шт: термін постачання 21-31 дні (днів) |
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BZX84-A75215 | Nexperia USA Inc. |
Description: NOW NEXPERIA ZENER DIODE, 75V, 1 |
товару немає в наявності |
Мінімальне замовлення: 3076 шт В кошику од. на суму грн. | ||||||||||||||
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BCP56T,115 | Nexperia USA Inc. |
Description: 1A, 80V, NPN, SILICONPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAT46GW,118 | Nexperia USA Inc. |
Description: RECTIFIER DIODE, SCHOTTKY, 0.25APackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LVC273BQ,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFNNumber of Bits per Element: 8 Part Status: Active Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF Supplier Device Package: 20-DHVQFN (4.5x2.5) Input Capacitance: 5 pF Clock Frequency: 230 MHz Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Current - Quiescent (Iq): 10 µA Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Type: D-Type Function: Master Reset Number of Elements: 1 Mounting Type: Surface Mount Output Type: Non-Inverted Package / Case: 20-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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74LVC273BQ,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFNCurrent - Quiescent (Iq): 10 µA Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Type: D-Type Function: Master Reset Number of Elements: 1 Mounting Type: Surface Mount Output Type: Non-Inverted Package / Case: 20-VFQFN Exposed Pad Packaging: Cut Tape (CT) Number of Bits per Element: 8 Part Status: Active Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF Supplier Device Package: 20-DHVQFN (4.5x2.5) Input Capacitance: 5 pF Clock Frequency: 230 MHz Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA |
на замовлення 622 шт: термін постачання 21-31 дні (днів) |
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| PMEG060V050EPD,139 | Nexperia USA Inc. |
Description: NOW NEXPERIA PMEG060V050EPD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PMEG045V150EPD,139 | Nexperia USA Inc. |
Description: NOW NEXPERIA PMEG045V150EPDPackaging: Bulk Part Status: Active |
на замовлення 2810 шт: термін постачання 21-31 дні (днів) |
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LD6816CX4/C13P,315 | Nexperia USA Inc. |
Description: IC REG LINEAR 1.3V 150MA 4-WLCSPPackaging: Bulk Part Status: Active Package / Case: 4-UFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WLCSP (0.76x0.76) Voltage - Output (Min/Fixed): 1.3V Control Features: Enable PSRR: 55dB (1kHz) Voltage Dropout (Max): 0.075V @ 150mA Protection Features: Over Current, Over Temperature, Transient Voltage Current - Supply (Max): 250 µA |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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74LVCH8T245BQ118 | Nexperia USA Inc. |
Description: IC TRANSLATR TXRX 5.5V 24DHVQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUK661R9-40C,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4800 шт В кошику од. на суму грн. |
| 74AUP1G06GW,125 |
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Виробник: Nexperia USA Inc.
Description: IC INVERTER 1CH 1-INP 5TSSOP
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC INVERTER 1CH 1-INP 5TSSOP
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.35 грн |
| 74AUP1G06GW,125 |
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Виробник: Nexperia USA Inc.
Description: IC INVERTER 1CH 1-INP 5TSSOP
Packaging: Cut Tape (CT)
Features: Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC INVERTER 1CH 1-INP 5TSSOP
Packaging: Cut Tape (CT)
Features: Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
на замовлення 3376 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.00 грн |
| 42+ | 7.26 грн |
| 48+ | 6.41 грн |
| 100+ | 5.10 грн |
| 250+ | 4.67 грн |
| 500+ | 4.41 грн |
| 1000+ | 4.13 грн |
| TLVH431NACDBZRVL |
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Виробник: Nexperia USA Inc.
Description: IC VREF SHUNT ADJ 1.5% TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-236AB
Voltage - Output (Min/Fixed): 1.24V
Part Status: Active
Current - Cathode: 80 µA
Current - Output: 70 mA
Voltage - Output (Max): 14 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC VREF SHUNT ADJ 1.5% TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-236AB
Voltage - Output (Min/Fixed): 1.24V
Part Status: Active
Current - Cathode: 80 µA
Current - Output: 70 mA
Voltage - Output (Max): 14 V
Grade: Automotive
Qualification: AEC-Q100
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| TLVH431NACDBZRR |
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Виробник: Nexperia USA Inc.
Description: IC VREF SHUNT ADJ 1.5% TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-236AB
Voltage - Output (Min/Fixed): 1.24V
Part Status: Active
Current - Cathode: 80 µA
Current - Output: 70 mA
Voltage - Output (Max): 14 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC VREF SHUNT ADJ 1.5% TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-236AB
Voltage - Output (Min/Fixed): 1.24V
Part Status: Active
Current - Cathode: 80 µA
Current - Output: 70 mA
Voltage - Output (Max): 14 V
Grade: Automotive
Qualification: AEC-Q100
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| MMBZ27VCL,215 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 22VWM 38VC TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 48pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 22VWM 38VC TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 48pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.28 грн |
| 31+ | 10.06 грн |
| 100+ | 6.27 грн |
| 500+ | 4.32 грн |
| NCR420ZX |
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Виробник: Nexperia USA Inc.
Description: IC LED DRVR LIN PWM 150MA SOT223
Internal Switch(s): Yes
Current - Output / Channel: 150mA
Operating Temperature: -55°C ~ 150°C (TA)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Part Status: Active
Voltage - Supply (Max): 40V
Dimming: PWM
Supplier Device Package: SOT-223
Topology: Linear
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: IC LED DRVR LIN PWM 150MA SOT223
Internal Switch(s): Yes
Current - Output / Channel: 150mA
Operating Temperature: -55°C ~ 150°C (TA)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Part Status: Active
Voltage - Supply (Max): 40V
Dimming: PWM
Supplier Device Package: SOT-223
Topology: Linear
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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| NCR420ZX |
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Виробник: Nexperia USA Inc.
Description: IC LED DRVR LIN PWM 150MA SOT223
Dimming: PWM
Supplier Device Package: SOT-223
Topology: Linear
Internal Switch(s): Yes
Current - Output / Channel: 150mA
Operating Temperature: -55°C ~ 150°C (TA)
Type: Linear
Voltage - Output: 40V
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Active
Voltage - Supply (Max): 40V
Qualification: AEC-Q101
Grade: Automotive
Description: IC LED DRVR LIN PWM 150MA SOT223
Dimming: PWM
Supplier Device Package: SOT-223
Topology: Linear
Internal Switch(s): Yes
Current - Output / Channel: 150mA
Operating Temperature: -55°C ~ 150°C (TA)
Type: Linear
Voltage - Output: 40V
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Active
Voltage - Supply (Max): 40V
Qualification: AEC-Q101
Grade: Automotive
на замовлення 252 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.49 грн |
| 17+ | 18.84 грн |
| 50+ | 15.46 грн |
| 100+ | 13.53 грн |
| NHUMD12F |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Current - Collector Cutoff (Max): 100nA
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 170MHz, 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Current - Collector Cutoff (Max): 100nA
Part Status: Active
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 170MHz, 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 3.95 грн |
| PMV30ENEAR |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 4.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 710mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 4.8A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 710mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| PDTA113EU |
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Виробник: Nexperia USA Inc.
Description: PDTA113E SERIES - PNP RESISTOR-E
Packaging: Bulk
Part Status: Active
Description: PDTA113E SERIES - PNP RESISTOR-E
Packaging: Bulk
Part Status: Active
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| PMH950UPEH |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 530MA DFN0606-3
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN0606-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 530MA DFN0606-3
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN0606-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 3.71 грн |
| 20000+ | 3.48 грн |
| PMH950UPEH |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 530MA DFN0606-3
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN0606-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 530MA DFN0606-3
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN0606-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
на замовлення 40634 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 31+ | 10.21 грн |
| 45+ | 6.73 грн |
| 56+ | 5.42 грн |
| 100+ | 4.69 грн |
| PMH550UPEH |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| PMH550UPEH |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
Description: MOSFET P-CH 20V 800MA DFN0606-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54.8 pF @ 10 V
на замовлення 6713 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.50 грн |
| 29+ | 10.67 грн |
| 100+ | 7.19 грн |
| 500+ | 5.17 грн |
| 1000+ | 4.64 грн |
| 2000+ | 4.18 грн |
| 5000+ | 3.62 грн |
| PMZB950UPELYL |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 500MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Description: MOSFET P-CH 20V 500MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
на замовлення 28788 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.99 грн |
| 16+ | 19.52 грн |
| 50+ | 14.10 грн |
| 100+ | 11.55 грн |
| PMZ350UPEYL |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Description: MOSFET P-CH 20V 1A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.49 грн |
| 19+ | 16.42 грн |
| 50+ | 11.79 грн |
| 100+ | 9.65 грн |
| PMEG150G20ELRX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Description: DIODE SIGE 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
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| NXS0108BQX |
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Виробник: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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| XS3A1T5157GSH |
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Виробник: Nexperia USA Inc.
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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| XS3A1T5157GSH |
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Виробник: Nexperia USA Inc.
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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| 74LVC1G3157GW-Q100,125 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
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| 74LVC1G3157GW-Q100125 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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| PMEG150G10ELRX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 150V 1A SOD123W
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Description: DIODE SIGE 150V 1A SOD123W
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
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| BC857CW/DG/B4F |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS PNP 45V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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| PMEG060V030EPDZ |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 1500 шт
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| PMEG060V030EPDZ |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 60.49 грн |
| 10+ | 36.08 грн |
| 100+ | 23.35 грн |
| 500+ | 16.76 грн |
| BUK7909-75ATE127 |
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Виробник: Nexperia USA Inc.
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
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| BUK7909-75ATE,127 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A TO220-5
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
Description: MOSFET N-CH 75V 75A TO220-5
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
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| BUK7909-75AIE,127 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| PDZ20B,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 20V 400MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15 V
Description: DIODE ZENER 20V 400MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15 V
на замовлення 2902 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 14.93 грн |
| 35+ | 8.78 грн |
| 50+ | 6.22 грн |
| 100+ | 5.06 грн |
| PTVS12VS1UR/8X |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| PMV52ENEAR |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A TO236AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 3.2A TO236AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.34 грн |
| PMV52ENEAR |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 3.2A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 4303 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.99 грн |
| 15+ | 20.42 грн |
| 100+ | 10.73 грн |
| 500+ | 9.15 грн |
| 1000+ | 7.87 грн |
| NHDTC143ZUF |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 2.48 грн |
| 20000+ | 2.16 грн |
| 30000+ | 2.05 грн |
| NHDTC143ZUF |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 32533 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 14.93 грн |
| 35+ | 8.78 грн |
| 100+ | 5.45 грн |
| 500+ | 3.73 грн |
| 1000+ | 3.29 грн |
| 2000+ | 2.91 грн |
| 5000+ | 2.46 грн |
| NHDTC143ZTR |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.73 грн |
| 6000+ | 2.35 грн |
| 9000+ | 2.20 грн |
| 15000+ | 1.92 грн |
| 21000+ | 1.83 грн |
| 30000+ | 1.74 грн |
| NHDTC143ZTR |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 34143 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.14 грн |
| 38+ | 8.02 грн |
| 100+ | 4.99 грн |
| 500+ | 3.41 грн |
| 1000+ | 3.00 грн |
| NHDTC143ZUX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.99 грн |
| 6000+ | 2.58 грн |
| 9000+ | 2.42 грн |
| NHDTC143ZUX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 12483 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 14.93 грн |
| 35+ | 8.78 грн |
| 100+ | 5.42 грн |
| 500+ | 3.72 грн |
| 1000+ | 3.27 грн |
| PBSS3540E,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 40V 0.5A SC-75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS PNP 40V 0.5A SC-75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: SC-75
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 95574 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1979+ | 10.01 грн |
| BUK7S1R5-40HJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 260A LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 260A LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BUK7S1R5-40HJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 260A LFPAK88
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 260A LFPAK88
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1946 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 283.59 грн |
| 10+ | 179.28 грн |
| 100+ | 125.91 грн |
| 500+ | 98.95 грн |
| BUK7S0R9-40HJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BUK7S0R9-40HJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PSMNR90-40SSHJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PSMNR90-40SSHJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 390.42 грн |
| PSMNR70-40SSHJ |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 425A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
Description: MOSFET N-CH 40V 425A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
на замовлення 4931 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 274.16 грн |
| 10+ | 221.34 грн |
| 100+ | 179.35 грн |
| 500+ | 158.28 грн |
| 1000+ | 153.07 грн |
| PTVS7V0S1UR,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 7VWM 12VC SOD123W
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 7.78V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 33.3A
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Description: TVS DIODE 7VWM 12VC SOD123W
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 7.78V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 33.3A
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 42.42 грн |
| 13+ | 24.74 грн |
| 50+ | 17.96 грн |
| 100+ | 14.77 грн |
| 74LVT16374ADGG,118 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Supplier Device Package: 48-TSSOP
Input Capacitance: 3 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 120 µA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Supplier Device Package: 48-TSSOP
Input Capacitance: 3 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 120 µA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 74LVT16374ADGG,118 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Supplier Device Package: 48-TSSOP
Input Capacitance: 3 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 120 µA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Cut Tape (CT)
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Supplier Device Package: 48-TSSOP
Input Capacitance: 3 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 64mA
Current - Quiescent (Iq): 120 µA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Cut Tape (CT)
на замовлення 572 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 81.70 грн |
| 10+ | 56.43 грн |
| 50+ | 47.57 грн |
| 100+ | 42.06 грн |
| BZX84-A75215 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA ZENER DIODE, 75V, 1
Description: NOW NEXPERIA ZENER DIODE, 75V, 1
товару немає в наявності
Мінімальне замовлення: 3076 шт
В кошику
од. на суму грн.
| BAT46GW,118 |
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Виробник: Nexperia USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY, 0.25A
Packaging: Bulk
Part Status: Active
Description: RECTIFIER DIODE, SCHOTTKY, 0.25A
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 74LVC273BQ,115 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFN
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Input Capacitance: 5 pF
Clock Frequency: 230 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 10 µA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFN
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Input Capacitance: 5 pF
Clock Frequency: 230 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 10 µA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 74LVC273BQ,115 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFN
Current - Quiescent (Iq): 10 µA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Input Capacitance: 5 pF
Clock Frequency: 230 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFN
Current - Quiescent (Iq): 10 µA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 20-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Bits per Element: 8
Part Status: Active
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Input Capacitance: 5 pF
Clock Frequency: 230 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
на замовлення 622 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.49 грн |
| 12+ | 25.87 грн |
| 25+ | 23.15 грн |
| 100+ | 18.87 грн |
| 250+ | 17.52 грн |
| 500+ | 16.70 грн |
| PMEG060V050EPD,139 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA PMEG060V050EPD
Description: NOW NEXPERIA PMEG060V050EPD
товару немає в наявності
В кошику
од. на суму грн.
| PMEG045V150EPD,139 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA PMEG045V150EPD
Packaging: Bulk
Part Status: Active
Description: NOW NEXPERIA PMEG045V150EPD
Packaging: Bulk
Part Status: Active
на замовлення 2810 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 838+ | 28.28 грн |
| LD6816CX4/C13P,315 |
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Виробник: Nexperia USA Inc.
Description: IC REG LINEAR 1.3V 150MA 4-WLCSP
Packaging: Bulk
Part Status: Active
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.075V @ 150mA
Protection Features: Over Current, Over Temperature, Transient Voltage
Current - Supply (Max): 250 µA
Description: IC REG LINEAR 1.3V 150MA 4-WLCSP
Packaging: Bulk
Part Status: Active
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.075V @ 150mA
Protection Features: Over Current, Over Temperature, Transient Voltage
Current - Supply (Max): 250 µA
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1165+ | 17.58 грн |
| 74LVCH8T245BQ118 |
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Виробник: Nexperia USA Inc.
Description: IC TRANSLATR TXRX 5.5V 24DHVQFN
Description: IC TRANSLATR TXRX 5.5V 24DHVQFN
товару немає в наявності
В кошику
од. на суму грн.
| BUK661R9-40C,118 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 120A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику
од. на суму грн.



























