Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (30844) > Сторінка 204 з 515
| Фото | Назва | Виробник | Інформація |
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PMZ350UPEYL | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 1A DFN1006-3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Power Dissipation (Max): 360mW (Ta), 3.125W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V |
на замовлення 580 шт: термін постачання 21-31 дні (днів) |
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PMEG150G20ELRX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 2A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V |
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NXS0108BQX | Nexperia USA Inc. |
Description: IC XLTR VL BIDIR 20-DHVQFNPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 110Mbps Supplier Device Package: 20-DHVQFN (4.5x2.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 1.2 V ~ 3.6 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
на замовлення 3283 шт: термін постачання 21-31 дні (днів) |
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XS3A1T5157GSH | Nexperia USA Inc. |
Description: IC SWITCH SPDT X 1 900MOHM 6XSONPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 900mOhm -3db Bandwidth: 40MHz Supplier Device Package: 6-XSON, SOT1202 (1x1) Voltage - Supply, Single (V+): 1.4V ~ 4.3V Charge Injection: 15pC Crosstalk: -90dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 40ns, 20ns Channel Capacitance (CS(off), CD(off)): 35pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
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XS3A1T5157GSH | Nexperia USA Inc. |
Description: IC SWITCH SPDT X 1 900MOHM 6XSONPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 900mOhm -3db Bandwidth: 40MHz Supplier Device Package: 6-XSON, SOT1202 (1x1) Voltage - Supply, Single (V+): 1.4V ~ 4.3V Charge Injection: 15pC Crosstalk: -90dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 40ns, 20ns Channel Capacitance (CS(off), CD(off)): 35pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
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74LVC1G3157GW-Q100,125 | Nexperia USA Inc. |
Description: NOW NEXPERIA 74LVC1G3157GW - SINPackaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
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| 74LVC1G3157GW-Q100125 | Nexperia USA Inc. |
Description: NOW NEXPERIA 74LVC1G3157GW - SINPackaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
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PMEG150G10ELRX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 1A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 34pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V |
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BC857CW/DG/B4F | Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A SC-70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
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PMEG060V030EPDZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 3A CFP15Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: Schottky Capacitance @ Vr, F: 350pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PMEG060V030EPDZ | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 3A CFP15Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: Schottky Capacitance @ Vr, F: 350pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1955 шт: термін постачання 21-31 дні (днів) |
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BUK7909-75ATE127 | Nexperia USA Inc. |
Description: N-CHANNEL POWER MOSFET |
товару немає в наявності |
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BUK7909-75ATE,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A TO220-5Packaging: Tube Package / Case: TO-220-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220-5 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Qualification: AEC-Q101 |
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BUK7909-75AIE,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A TO220-5Packaging: Tube Package / Case: TO-220-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220-5 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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PDZ20B,115 | Nexperia USA Inc. |
Description: DIODE ZENER 20V 400MW SOD323Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 15 V |
на замовлення 2902 шт: термін постачання 21-31 дні (днів) |
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PTVS12VS1UR/8X | Nexperia USA Inc. |
Description: TVS DIODE 12VWM 19.9VC SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 20.1A Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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PMV52ENEAR | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 3.2A TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V Power Dissipation (Max): 630mW (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMV52ENEAR | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 3.2A TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V Power Dissipation (Max): 630mW (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4303 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZUF | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZUF | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 18994 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZTR | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZTR | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6292 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZUX | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NHDTC143ZUX | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 15150 шт: термін постачання 21-31 дні (днів) |
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BUK7S1R5-40HJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 260A LFPAK88Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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BUK7S1R5-40HJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 260A LFPAK88Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1946 шт: термін постачання 21-31 дні (днів) |
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BUK7S0R9-40HJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 375A LFPAK88Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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BUK7S0R9-40HJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 375A LFPAK88Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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PSMNR90-40SSHJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 375A LFPAK88Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V |
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PSMNR90-40SSHJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 375A LFPAK88Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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PSMNR70-40SSHJ | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 425A LFPAK88Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 425A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V |
на замовлення 4931 шт: термін постачання 21-31 дні (днів) |
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PTVS7V0S1UR,115 | Nexperia USA Inc. |
Description: TVS DIODE 7VWM 12VC SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 33.3A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8391 шт: термін постачання 21-31 дні (днів) |
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74LVT16374ADGG,118 | Nexperia USA Inc. |
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOPPackaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 2 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Current - Quiescent (Iq): 120 µA Current - Output High, Low: 32mA, 64mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 3 pF Supplier Device Package: 48-TSSOP Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF Part Status: Active Number of Bits per Element: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74LVT16374ADGG,118 | Nexperia USA Inc. |
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOPPackaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 2 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Current - Quiescent (Iq): 120 µA Current - Output High, Low: 32mA, 64mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 3 pF Supplier Device Package: 48-TSSOP Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF Part Status: Active Number of Bits per Element: 8 |
на замовлення 572 шт: термін постачання 21-31 дні (днів) |
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BZX84-A75215 | Nexperia USA Inc. |
Description: NOW NEXPERIA ZENER DIODE, 75V, 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCP56T,115 | Nexperia USA Inc. |
Description: 1A, 80V, NPN, SILICONPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT46GW,118 | Nexperia USA Inc. |
Description: RECTIFIER DIODE, SCHOTTKY, 0.25APackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74LVC273BQ,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFNPackaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Iq): 10 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 230 MHz Input Capacitance: 5 pF Supplier Device Package: 20-DHVQFN (4.5x2.5) Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF Part Status: Active Number of Bits per Element: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74LVC273BQ,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFNPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Iq): 10 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 230 MHz Input Capacitance: 5 pF Supplier Device Package: 20-DHVQFN (4.5x2.5) Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF Part Status: Active Number of Bits per Element: 8 |
на замовлення 622 шт: термін постачання 21-31 дні (днів) |
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| PMEG060V050EPD,139 | Nexperia USA Inc. |
Description: NOW NEXPERIA PMEG060V050EPD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PMEG045V150EPD,139 | Nexperia USA Inc. |
Description: NOW NEXPERIA PMEG045V150EPDPackaging: Bulk Part Status: Active |
на замовлення 2810 шт: термін постачання 21-31 дні (днів) |
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LD6816CX4/C13P,315 | Nexperia USA Inc. |
Description: IC REG LINEAR 1.3V 150MA 4-WLCSPPackaging: Bulk Part Status: Active Package / Case: 4-UFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WLCSP (0.76x0.76) Voltage - Output (Min/Fixed): 1.3V Control Features: Enable PSRR: 55dB (1kHz) Voltage Dropout (Max): 0.075V @ 150mA Protection Features: Over Current, Over Temperature, Transient Voltage Current - Supply (Max): 250 µA |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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74LVCH8T245BQ118 | Nexperia USA Inc. |
Description: IC TRANSLATR TXRX 5.5V 24DHVQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BUK661R9-40C,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BUK661R9-40C,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1310 шт: термін постачання 21-31 дні (днів) |
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BUK9Y1R9-40H,115 | Nexperia USA Inc. |
Description: POWER FIELD-EFFECT TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NHDTA114YTR | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 80V TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NHDTA114YUX | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 80V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 25259 шт: термін постачання 21-31 дні (днів) |
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BCP56H,115 | Nexperia USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 155MHz Supplier Device Package: SOT-223 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2.2 W Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC857BQBZ | Nexperia USA Inc. |
Description: TRANS 45V 0.1A DFN1110D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: DFN1110D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC857BQBZ | Nexperia USA Inc. |
Description: TRANS 45V 0.1A DFN1110D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: DFN1110D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52-C5V1,115 | Nexperia USA Inc. |
Description: ZENER DIODE, 5.1V, 4.99%, 0.41W,Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCP56-10T,115 | Nexperia USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,Packaging: Bulk Part Status: Active Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 155MHz Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 600 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LSF0102GXX | Nexperia USA Inc. |
Description: IC TRANSLTR BIDIRECTIONAL 8X2SONPackaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 8-X2SON (1.35x0.8) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0 V ~ 5 V Voltage - VCCB: 0 V ~ 5 V Part Status: Active Number of Circuits: 1 |
на замовлення 5494 шт: термін постачання 21-31 дні (днів) |
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LSF0102DCH | Nexperia USA Inc. |
Description: IC TRANSLTR BIDIRECTIONAL 8VSSOPPackaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100MHz Supplier Device Package: 8-VSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0 V ~ 5 V Voltage - VCCB: 0 V ~ 5 V Part Status: Active Number of Circuits: 1 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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LSF0102DCH | Nexperia USA Inc. |
Description: IC TRANSLTR BIDIRECTIONAL 8VSSOPPackaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 100MHz Supplier Device Package: 8-VSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0 V ~ 5 V Voltage - VCCB: 0 V ~ 5 V Part Status: Active Number of Circuits: 1 |
на замовлення 11017 шт: термін постачання 21-31 дні (днів) |
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LSF0101GMX | Nexperia USA Inc. |
Description: IC TRANSLTR BIDIRECTIONAL 6XSONPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 6-XSON, SOT886 (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0.95 V ~ 5 V Voltage - VCCB: 0.95 V ~ 5 V Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LSF0101GWH | Nexperia USA Inc. |
Description: IC TRANSLTR BIDIRECTIONAL 6TSSOPPackaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 6-TSSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0.95 V ~ 4.5 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74HC2G17GW-Q100H | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 6V 6-TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 5.2mA, 5.2mA Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4792 шт: термін постачання 21-31 дні (днів) |
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PMEG120G30ELPX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 3A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 103pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V |
товару немає в наявності |
В кошику од. на суму грн. |
| PMZ350UPEYL |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Description: MOSFET P-CH 20V 1A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
на замовлення 580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.91 грн |
| 19+ | 17.26 грн |
| 50+ | 12.39 грн |
| 100+ | 10.15 грн |
| PMEG150G20ELRX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Description: DIODE SIGE 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| NXS0108BQX |
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Виробник: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 110Mbps
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 3283 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 80.96 грн |
| 10+ | 55.84 грн |
| 50+ | 47.01 грн |
| 100+ | 41.54 грн |
| XS3A1T5157GSH |
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Виробник: Nexperia USA Inc.
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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| XS3A1T5157GSH |
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Виробник: Nexperia USA Inc.
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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| 74LVC1G3157GW-Q100,125 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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| 74LVC1G3157GW-Q100125 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: NOW NEXPERIA 74LVC1G3157GW - SIN
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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| PMEG150G10ELRX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
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| BC857CW/DG/B4F |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS PNP 45V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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| PMEG060V030EPDZ |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 19.26 грн |
| PMEG060V030EPDZ |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.52 грн |
| 10+ | 44.07 грн |
| 50+ | 32.33 грн |
| 100+ | 26.76 грн |
| BUK7909-75ATE127 |
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Виробник: Nexperia USA Inc.
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
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| BUK7909-75ATE,127 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
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| BUK7909-75AIE,127 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| PDZ20B,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 20V 400MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15 V
Description: DIODE ZENER 20V 400MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15 V
на замовлення 2902 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.70 грн |
| 35+ | 9.23 грн |
| 50+ | 6.54 грн |
| 100+ | 5.32 грн |
| PTVS12VS1UR/8X |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| PMV52ENEAR |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 3.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.67 грн |
| PMV52ENEAR |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 3.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4303 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.70 грн |
| 15+ | 21.48 грн |
| 100+ | 11.28 грн |
| 500+ | 9.62 грн |
| 1000+ | 8.27 грн |
| NHDTC143ZUF |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.75 грн |
| NHDTC143ZUF |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 18994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.52 грн |
| 33+ | 9.71 грн |
| 100+ | 6.01 грн |
| 500+ | 4.13 грн |
| 1000+ | 3.63 грн |
| 2000+ | 3.22 грн |
| 5000+ | 2.72 грн |
| NHDTC143ZTR |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.09 грн |
| 6000+ | 2.66 грн |
| NHDTC143ZTR |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6292 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.70 грн |
| 36+ | 9.07 грн |
| 100+ | 5.63 грн |
| 500+ | 3.85 грн |
| 1000+ | 3.39 грн |
| NHDTC143ZUX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.22 грн |
| 6000+ | 2.77 грн |
| 9000+ | 2.60 грн |
| NHDTC143ZUX |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 15150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.70 грн |
| 34+ | 9.39 грн |
| 100+ | 5.84 грн |
| 500+ | 4.00 грн |
| 1000+ | 3.52 грн |
| BUK7S1R5-40HJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 260A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 260A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BUK7S1R5-40HJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 260A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 260A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1946 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.65 грн |
| BUK7S0R9-40HJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BUK7S0R9-40HJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PSMNR90-40SSHJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| PSMNR90-40SSHJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 410.57 грн |
| PSMNR70-40SSHJ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 425A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
Description: MOSFET N-CH 40V 425A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
на замовлення 4931 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 288.31 грн |
| 10+ | 232.76 грн |
| 100+ | 188.60 грн |
| 500+ | 166.45 грн |
| 1000+ | 160.97 грн |
| PTVS7V0S1UR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 7VWM 12VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 7VWM 12VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8391 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.09 грн |
| 12+ | 28.08 грн |
| 50+ | 20.38 грн |
| 100+ | 16.77 грн |
| 74LVT16374ADGG,118 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 120 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 3 pF
Supplier Device Package: 48-TSSOP
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 120 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 3 pF
Supplier Device Package: 48-TSSOP
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
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| 74LVT16374ADGG,118 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 120 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 3 pF
Supplier Device Package: 48-TSSOP
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE DBL 8-BIT 48-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 120 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 3 pF
Supplier Device Package: 48-TSSOP
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 572 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.91 грн |
| 10+ | 59.34 грн |
| 50+ | 50.02 грн |
| 100+ | 44.23 грн |
| BZX84-A75215 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA ZENER DIODE, 75V, 1
Description: NOW NEXPERIA ZENER DIODE, 75V, 1
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| BAT46GW,118 |
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Виробник: Nexperia USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY, 0.25A
Packaging: Bulk
Part Status: Active
Description: RECTIFIER DIODE, SCHOTTKY, 0.25A
Packaging: Bulk
Part Status: Active
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| 74LVC273BQ,115 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 230 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 230 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
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| 74LVC273BQ,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 230 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 230 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Max Propagation Delay @ V, Max CL: 8.2ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 622 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.48 грн |
| 12+ | 27.21 грн |
| 25+ | 24.34 грн |
| 100+ | 19.84 грн |
| 250+ | 18.42 грн |
| 500+ | 17.56 грн |
| PMEG060V050EPD,139 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA PMEG060V050EPD
Description: NOW NEXPERIA PMEG060V050EPD
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| PMEG045V150EPD,139 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA PMEG045V150EPD
Packaging: Bulk
Part Status: Active
Description: NOW NEXPERIA PMEG045V150EPD
Packaging: Bulk
Part Status: Active
на замовлення 2810 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 838+ | 29.74 грн |
| LD6816CX4/C13P,315 |
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Виробник: Nexperia USA Inc.
Description: IC REG LINEAR 1.3V 150MA 4-WLCSP
Packaging: Bulk
Part Status: Active
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.075V @ 150mA
Protection Features: Over Current, Over Temperature, Transient Voltage
Current - Supply (Max): 250 µA
Description: IC REG LINEAR 1.3V 150MA 4-WLCSP
Packaging: Bulk
Part Status: Active
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 55dB (1kHz)
Voltage Dropout (Max): 0.075V @ 150mA
Protection Features: Over Current, Over Temperature, Transient Voltage
Current - Supply (Max): 250 µA
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1299+ | 16.29 грн |
| 74LVCH8T245BQ118 |
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Виробник: Nexperia USA Inc.
Description: IC TRANSLATR TXRX 5.5V 24DHVQFN
Description: IC TRANSLATR TXRX 5.5V 24DHVQFN
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| BUK661R9-40C,118 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
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| BUK661R9-40C,118 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1310 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 279.22 грн |
| 10+ | 185.91 грн |
| 100+ | 136.32 грн |
| BUK9Y1R9-40H,115 |
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Виробник: Nexperia USA Inc.
Description: POWER FIELD-EFFECT TRANSISTOR
Description: POWER FIELD-EFFECT TRANSISTOR
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| NHDTA114YTR |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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| NHDTA114YUX |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 25259 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.00 грн |
| 28+ | 11.38 грн |
| 50+ | 8.11 грн |
| 100+ | 6.62 грн |
| BCP56H,115 |
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Виробник: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.2 W
Qualification: AEC-Q101
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2.2 W
Qualification: AEC-Q101
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| BC857BQBZ |
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Виробник: Nexperia USA Inc.
Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
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| BC857BQBZ |
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Виробник: Nexperia USA Inc.
Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
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| BZT52-C5V1,115 |
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Виробник: Nexperia USA Inc.
Description: ZENER DIODE, 5.1V, 4.99%, 0.41W,
Packaging: Bulk
Part Status: Active
Description: ZENER DIODE, 5.1V, 4.99%, 0.41W,
Packaging: Bulk
Part Status: Active
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| BCP56-10T,115 |
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Виробник: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Part Status: Active
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Part Status: Active
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
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| LSF0102GXX |
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Виробник: Nexperia USA Inc.
Description: IC TRANSLTR BIDIRECTIONAL 8X2SON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN Exposed Pad
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-X2SON (1.35x0.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8X2SON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN Exposed Pad
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-X2SON (1.35x0.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
на замовлення 5494 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.00 грн |
| 13+ | 26.01 грн |
| 25+ | 23.29 грн |
| 100+ | 18.97 грн |
| 250+ | 17.61 грн |
| 500+ | 16.78 грн |
| 1000+ | 15.84 грн |
| 2500+ | 15.14 грн |
| 5000+ | 14.71 грн |
| LSF0102DCH |
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Виробник: Nexperia USA Inc.
Description: IC TRANSLTR BIDIRECTIONAL 8VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 8-VSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 8-VSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.77 грн |
| LSF0102DCH |
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Виробник: Nexperia USA Inc.
Description: IC TRANSLTR BIDIRECTIONAL 8VSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 8-VSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8VSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 100MHz
Supplier Device Package: 8-VSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
на замовлення 11017 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.78 грн |
| 11+ | 29.43 грн |
| 25+ | 26.31 грн |
| 100+ | 21.51 грн |
| 250+ | 19.98 грн |
| 500+ | 19.06 грн |
| 1000+ | 18.01 грн |
| LSF0101GMX |
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Виробник: Nexperia USA Inc.
Description: IC TRANSLTR BIDIRECTIONAL 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.95 V ~ 5 V
Voltage - VCCB: 0.95 V ~ 5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.95 V ~ 5 V
Voltage - VCCB: 0.95 V ~ 5 V
Part Status: Active
Number of Circuits: 1
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| LSF0101GWH |
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Виробник: Nexperia USA Inc.
Description: IC TRANSLTR BIDIRECTIONAL 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 6-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.95 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 6-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.95 V ~ 4.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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| 74HC2G17GW-Q100H |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 6V 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 5.2mA, 5.2mA
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 6V 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 5.2mA, 5.2mA
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4792 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.26 грн |
| 18+ | 17.98 грн |
| 50+ | 14.75 грн |
| 100+ | 12.90 грн |
| PMEG120G30ELPX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Description: DIODE SIGE 120V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
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