| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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74LVC1G86GW,125 | NEXPERIA |
 Category: Gates, invertersDescription: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; TSSOP5; Mini Logic; LVC Type of integrated circuit: digital Kind of gate: XOR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP5 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Manufacturer series: Mini Logic |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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| 74LVC1G86GM,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Family: LVC Delay time: 13ns Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74LVC1G86GM,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Family: LVC Delay time: 13ns Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74LVC1G86GN,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74LVC1G86GS,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX84-C27,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84-C27,235 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BZX84-C27-QR | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74LVC1G66GW,125 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; bilateral,SPST; Ch: 1; IN: 1; CMOS,TTL; SMD; TSSOP5; LVC Type of integrated circuit: digital Kind of integrated circuit: bilateral; SPST Number of channels: 1 Technology: CMOS; TTL Supply voltage: 1.65...5.5V DC Mounting: SMD Case: TSSOP5 Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Number of inputs: 1 |
на замовлення 3822 шт: термін постачання 14-30 дні (днів) |
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74LVC1G66GV,125 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; bilateral,SPST; Ch: 1; IN: 1; CMOS,TTL; SMD; SC74A; LVC Type of integrated circuit: digital Kind of integrated circuit: bilateral; SPST Number of channels: 1 Technology: CMOS; TTL Supply voltage: 1.65...5.5V DC Mounting: SMD Case: SC74A Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Number of inputs: 1 |
на замовлення 3029 шт: термін постачання 14-30 дні (днів) |
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| 74LVC1G66GM,115 | NEXPERIA |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 1; XSON6; 1.65÷5.5VDC; reel,tape Type of integrated circuit: analog switch Number of channels: 1 Mounting: SMD Case: XSON6 Family: LVC Operating temperature: -40...125°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Output configuration: SPST-NO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74LVC1G66GS,132 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; switch; Ch: 1; IN: 2; CMOS; SMD; XSON6; LVC; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: switch Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: XSON6 Family: LVC Operating temperature: -40...125°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PBSS5320X,135 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 3A; 1.6W; SC62,SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 3A Power dissipation: 1.6W Case: SC62; SOT89 Current gain: 100...220 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74AHCT1G125GV,125 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 1; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: AHCT Case: SC74A Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 74AHCT1G125GM,132 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,line driver; Ch: 1; IN: 2; TTL; SMD; AHCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver Number of channels: 1 Technology: TTL Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: AHCT Case: XSON6 Number of inputs: 2 Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZT52H-B4V3,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.375/0.83W; 4.3V; SMD; reel,tape; SOD123F Type of diode: Zener Power dissipation: 0.375/0.83W Zener voltage: 4.3V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Max. forward voltage: 0.9V Max. load current: 0.25A |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BZX585-B4V3,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD523; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Max. load current: 0.2A Max. forward voltage: 1.1V |
на замовлення 1356 шт: термін постачання 14-30 дні (днів) |
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BZX84-B4V3,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 4.3V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Max. load current: 0.2A Max. forward voltage: 0.9V |
на замовлення 2687 шт: термін постачання 14-30 дні (днів) |
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BZX79-B4V3,113 | NEXPERIA |
Category: THT Zener diodes Description: Diode: Zener; 500mW; 4.3V; reel,tape; DO35; single diode; 250mA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Mounting: THT Tolerance: ±2% Kind of package: reel; tape Case: DO35 Semiconductor structure: single diode Max. load current: 0.25A Max. forward voltage: 0.9V |
на замовлення 574 шт: термін постачання 14-30 дні (днів) |
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BZX384-B4V3,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Max. load current: 0.25A Max. forward voltage: 0.9V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZV55-B4V3,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4/0.5W; 4.3V; SMD; reel,tape; SOD80C; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD80C Semiconductor structure: single diode Max. load current: 0.25A Max. forward voltage: 0.9V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX585-B4V3,135 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 300mW; 4.3V; SMD; reel,tape; SOD523; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Max. load current: 0.2A Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZB84-B4V3,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Max. load current: 0.2A Max. forward voltage: 0.9V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BZT52H-B4V3-QX | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.375/0.83W; 4.3V; SMD; reel,tape; SOD123F Type of diode: Zener Power dissipation: 0.375/0.83W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Max. load current: 0.25A Max. forward voltage: 0.9V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BCV61A,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base Semiconductor structure: common base Mounting: SMD Case: SOT143B Pulsed collector current: 0.2A Power dissipation: 0.25W Collector-emitter voltage: 30V Current gain: 110...220 Frequency: 100MHz Polarisation: bipolar Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.1A |
на замовлення 3258 шт: термін постачання 14-30 дні (днів) |
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BCV62A,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base Semiconductor structure: common base Mounting: SMD Case: SOT143B Power dissipation: 0.25W Collector-emitter voltage: 30V Current gain: 100...250 Frequency: 100MHz Polarisation: bipolar Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A |
на замовлення 1220 шт: термін постачання 14-30 дні (днів) |
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BAS40-07,215 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT143B; SMD; 40V; 0.12A; reel,tape Type of diode: Schottky switching Case: SOT143B Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double independent Capacitance: 5pF Max. forward voltage: 1V Leakage current: 10µA Max. forward impulse current: 0.2A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAT74,215 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT143B; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Semiconductor structure: double independent Mounting: SMD Case: SOT143B Max. off-state voltage: 30V Load current: 0.2A Max. forward impulse current: 0.6A Max. forward voltage: 0.8V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PRTR5V0U2AX,215 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2 Type of diode: TVS array Breakdown voltage: 6...9V Semiconductor structure: unidirectional Mounting: SMD Case: SOT143B Max. off-state voltage: 5.5V Leakage current: 0.1µA Number of channels: 2 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PESD2ETH-AXR | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2; ESD Type of diode: TVS array Breakdown voltage: 6...9V Semiconductor structure: unidirectional Mounting: SMD Case: SOT143B Max. off-state voltage: 5.5V Leakage current: 0.1µA Number of channels: 2 Application: automotive industry; Ethernet Version: ESD Capacitance: 1.8pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PRTR5V0U2X,215 | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 7.5V; unidirectional; SOT143B; Ch: 2 Type of diode: TVS array Breakdown voltage: 7.5V Semiconductor structure: unidirectional Mounting: SMD Case: SOT143B Max. off-state voltage: 5.5V Leakage current: 0.1µA Number of channels: 2 Application: universal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAW101,215 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 600V; 250mA; 50ns; SOT143B; Ufmax: 1.1V; 0.35W Type of diode: switching Semiconductor structure: double independent Mounting: SMD Case: SOT143B Max. off-state voltage: 0.6kV Leakage current: 50µA Load current: 0.25A Max. forward impulse current: 4.5A Power dissipation: 0.35W Max. forward voltage: 1.1V Features of semiconductor devices: fast switching Kind of package: reel; tape Reverse recovery time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCV62C,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base Semiconductor structure: common base Mounting: SMD Case: SOT143B Power dissipation: 0.25W Collector-emitter voltage: 30V Current gain: 420...800 Frequency: 100MHz Polarisation: bipolar Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCV61B,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base Semiconductor structure: common base Mounting: SMD Case: SOT143B Power dissipation: 0.25W Collector-emitter voltage: 30V Current gain: 200...450 Frequency: 100MHz Polarisation: bipolar Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCV61C,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base Semiconductor structure: common base Mounting: SMD Case: SOT143B Pulsed collector current: 0.2A Power dissipation: 0.25W Collector-emitter voltage: 30V Current gain: 420...800 Frequency: 100MHz Polarisation: bipolar Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCV65,215 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; 30V; 0.1A; 250mW; SOT143B Semiconductor structure: common base; common emitter Mounting: SMD Case: SOT143B Power dissipation: 0.25W Collector-emitter voltage: 30V Current gain: 75...800 Polarisation: bipolar Type of transistor: NPN / PNP Kind of package: reel; tape Collector current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 +1 |
74LVC139BQ,115 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD Operating temperature: -40...125°C Case: DHVQFN16 Type of integrated circuit: digital Family: LVC Kind of package: reel; tape Mounting: SMD Supply voltage: 1.2...3.6V DC Number of channels: 2 Number of inputs: 3 Technology: CMOS; TTL Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG6010CEH,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 9A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG6010CEH.115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 9A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HC4002D,653 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA Type of integrated circuit: digital Kind of gate: NOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: SO14 Operating temperature: -40...125°C Quiescent current: 40µA Family: HC Kind of package: reel; tape Delay time: 150ns Supply voltage: 2...6V DC Technology: CMOS |
на замовлення 1830 шт: термін постачання 14-30 дні (днів) |
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74HC4002DB,112 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SSOP14; 2÷6VDC; tube; HC Type of integrated circuit: digital Kind of gate: NOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: SSOP14 Family: HC Kind of package: tube Supply voltage: 2...6V DC Technology: CMOS |
на замовлення 36 шт: термін постачання 14-30 дні (днів) |
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74HC4002PW,112 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; tube; HC Type of integrated circuit: digital Kind of gate: NOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Family: HC Kind of package: tube Supply voltage: 2...6V DC Technology: CMOS |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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74HC4002PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Operating temperature: -40...125°C Quiescent current: 40µA Family: HC Kind of package: reel; tape Delay time: 150ns Supply voltage: 2...6V DC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MJD2873-QJ | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 15W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 15W Case: DPAK; TO252 Current gain: 40...360 Mounting: SMD Kind of package: reel; tape Frequency: 65MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PSMN1R2-25YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 121W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 121W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
PSMN0R7-25YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 235A Power dissipation: 158W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.47mΩ Mounting: SMD Gate charge: 110.2nC Kind of package: reel; tape Kind of channel: enhancement |
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 |
PSMN1R3-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 121W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 121W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
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 +1 |
PSMN4R2-80YSEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 123A Pulsed drain current: 698A Power dissipation: 294W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||
| PSMN4R8-100YSEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 115A Pulsed drain current: 653A Power dissipation: 294W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| PSMN1R0-40YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 198A; Idm: 1284A; 198W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 198A Pulsed drain current: 1284A Power dissipation: 198W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 1.93mΩ Mounting: SMD Gate charge: 127nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
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В кошику од. на суму грн. | |||||||||||||||
| PSMN1R2-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 209A Pulsed drain current: 1181A Power dissipation: 194W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 2.05mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
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В кошику од. на суму грн. | |||||||||||||||
| PSMN3R0-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 90A; Idm: 512A; 91W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Pulsed drain current: 512A Power dissipation: 91W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 46.4nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
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В кошику од. на суму грн. | |||||||||||||||
| PSMN7R5-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Pulsed drain current: 202A Power dissipation: 34W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
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В кошику од. на суму грн. | |||||||||||||||
| PSMN2R4-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 625A Power dissipation: 106W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 4mΩ Mounting: SMD Gate charge: 31.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
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В кошику од. на суму грн. | |||||||||||||||
| PSMNR67-30YLEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 361A; Idm: 2.07kA; 333W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 361A Pulsed drain current: 2.07kA Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 185nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| PSMNR58-30YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 347A; Idm: 1960A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 347A Pulsed drain current: 1960A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 188nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| BUK7J1R4-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Pulsed drain current: 600A Power dissipation: 395W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
| PSMN1R0-40YSHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 277A; Idm: 1564A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 277A Pulsed drain current: 1564A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| PSMNR51-25YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 380A Pulsed drain current: 2174A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.46mΩ Mounting: SMD Gate charge: 186nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| PSMNR90-40YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 285A; Idm: 1613A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 285A Pulsed drain current: 1613A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 168nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. |
| 74LVC1G86GW,125 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; TSSOP5; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; TSSOP5; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
на замовлення 2 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 226.47 грн |
| 74LVC1G86GM,115 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Delay time: 13ns
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Delay time: 13ns
Manufacturer series: Mini Logic
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| 74LVC1G86GM,132 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Delay time: 13ns
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Delay time: 13ns
Manufacturer series: Mini Logic
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| 74LVC1G86GN,132 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
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В кошику
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| 74LVC1G86GS,132 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
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В кошику
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| BZX84-C27,215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
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| BZX84-C27,235 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
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| BZX84-C27-QR |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
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| 74LVC1G66GW,125 |
|
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; bilateral,SPST; Ch: 1; IN: 1; CMOS,TTL; SMD; TSSOP5; LVC
Type of integrated circuit: digital
Kind of integrated circuit: bilateral; SPST
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: TSSOP5
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Number of inputs: 1
Category: Decoders, multiplexers, switches
Description: IC: digital; bilateral,SPST; Ch: 1; IN: 1; CMOS,TTL; SMD; TSSOP5; LVC
Type of integrated circuit: digital
Kind of integrated circuit: bilateral; SPST
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: TSSOP5
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Number of inputs: 1
на замовлення 3822 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.44 грн |
| 95+ | 4.46 грн |
| 102+ | 4.14 грн |
| 110+ | 3.85 грн |
| 250+ | 3.67 грн |
| 500+ | 3.30 грн |
| 1000+ | 3.12 грн |
| 74LVC1G66GV,125 |
|
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; bilateral,SPST; Ch: 1; IN: 1; CMOS,TTL; SMD; SC74A; LVC
Type of integrated circuit: digital
Kind of integrated circuit: bilateral; SPST
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC74A
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Number of inputs: 1
Category: Decoders, multiplexers, switches
Description: IC: digital; bilateral,SPST; Ch: 1; IN: 1; CMOS,TTL; SMD; SC74A; LVC
Type of integrated circuit: digital
Kind of integrated circuit: bilateral; SPST
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC74A
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Number of inputs: 1
на замовлення 3029 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.87 грн |
| 50+ | 8.58 грн |
| 57+ | 7.49 грн |
| 100+ | 6.48 грн |
| 250+ | 6.22 грн |
| 500+ | 5.55 грн |
| 1000+ | 5.30 грн |
| 74LVC1G66GM,115 |
|
Виробник: NEXPERIA
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 1; XSON6; 1.65÷5.5VDC; reel,tape
Type of integrated circuit: analog switch
Number of channels: 1
Mounting: SMD
Case: XSON6
Family: LVC
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Output configuration: SPST-NO
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 1; XSON6; 1.65÷5.5VDC; reel,tape
Type of integrated circuit: analog switch
Number of channels: 1
Mounting: SMD
Case: XSON6
Family: LVC
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Output configuration: SPST-NO
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| 74LVC1G66GS,132 |
|
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; switch; Ch: 1; IN: 2; CMOS; SMD; XSON6; LVC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: switch
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON6
Family: LVC
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; switch; Ch: 1; IN: 2; CMOS; SMD; XSON6; LVC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: switch
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON6
Family: LVC
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
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| PBSS5320X,135 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 3A; 1.6W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3A
Power dissipation: 1.6W
Case: SC62; SOT89
Current gain: 100...220
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 3A; 1.6W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 3A
Power dissipation: 1.6W
Case: SC62; SOT89
Current gain: 100...220
Mounting: SMD
Kind of package: reel; tape
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| 74AHCT1G125GV,125 |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: AHCT
Case: SC74A
Manufacturer series: Mini Logic
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: AHCT
Case: SC74A
Manufacturer series: Mini Logic
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| 74AHCT1G125GM,132 |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 1; IN: 2; TTL; SMD; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Number of channels: 1
Technology: TTL
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: AHCT
Case: XSON6
Number of inputs: 2
Manufacturer series: Mini Logic
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 1; IN: 2; TTL; SMD; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Number of channels: 1
Technology: TTL
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: AHCT
Case: XSON6
Number of inputs: 2
Manufacturer series: Mini Logic
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| BZT52H-B4V3,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 4.3V; SMD; reel,tape; SOD123F
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 0.25A
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 4.3V; SMD; reel,tape; SOD123F
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 0.25A
на замовлення 10 шт:
термін постачання 14-30 дні (днів)В кошику од. на суму грн.
| BZX585-B4V3,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD523; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 1.1V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD523; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 1.1V
на замовлення 1356 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.59 грн |
| 41+ | 10.43 грн |
| 47+ | 9.08 грн |
| BZX84-B4V3,215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 0.9V
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 0.9V
на замовлення 2687 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.68 грн |
| 57+ | 7.40 грн |
| 100+ | 5.22 грн |
| BZX79-B4V3,113 |
|
Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 4.3V; reel,tape; DO35; single diode; 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: THT
Tolerance: ±2%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 4.3V; reel,tape; DO35; single diode; 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: THT
Tolerance: ±2%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
на замовлення 574 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.25 грн |
| 80+ | 5.30 грн |
| 100+ | 4.21 грн |
| BZX384-B4V3,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
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| BZV55-B4V3,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 4.3V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD80C
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 4.3V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD80C
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
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| BZX585-B4V3,135 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 4.3V; SMD; reel,tape; SOD523; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 1.1V
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 4.3V; SMD; reel,tape; SOD523; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 1.1V
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| BZB84-B4V3,215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Max. load current: 0.2A
Max. forward voltage: 0.9V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Max. load current: 0.2A
Max. forward voltage: 0.9V
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| BZT52H-B4V3-QX |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 4.3V; SMD; reel,tape; SOD123F
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 4.3V; SMD; reel,tape; SOD123F
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
Application: automotive industry
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| BCV61A,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Semiconductor structure: common base
Mounting: SMD
Case: SOT143B
Pulsed collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 110...220
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Semiconductor structure: common base
Mounting: SMD
Case: SOT143B
Pulsed collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 110...220
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
на замовлення 3258 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.48 грн |
| 18+ | 24.31 грн |
| 100+ | 14.22 грн |
| BCV62A,215 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Semiconductor structure: common base
Mounting: SMD
Case: SOT143B
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 100...250
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Semiconductor structure: common base
Mounting: SMD
Case: SOT143B
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 100...250
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
на замовлення 1220 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.21 грн |
| 32+ | 13.46 грн |
| 100+ | 10.68 грн |
| BAS40-07,215 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143B; SMD; 40V; 0.12A; reel,tape
Type of diode: Schottky switching
Case: SOT143B
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 10µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143B; SMD; 40V; 0.12A; reel,tape
Type of diode: Schottky switching
Case: SOT143B
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 10µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
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| BAT74,215 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143B; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Semiconductor structure: double independent
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 30V
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143B; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Semiconductor structure: double independent
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 30V
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Kind of package: reel; tape
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| PRTR5V0U2AX,215 |
|
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry
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| PESD2ETH-AXR |
|
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry; Ethernet
Version: ESD
Capacitance: 1.8pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 2
Application: automotive industry; Ethernet
Version: ESD
Capacitance: 1.8pF
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| PRTR5V0U2X,215 |
|
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SOT143B; Ch: 2
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 2
Application: universal
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SOT143B; Ch: 2
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 2
Application: universal
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| BAW101,215 |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 600V; 250mA; 50ns; SOT143B; Ufmax: 1.1V; 0.35W
Type of diode: switching
Semiconductor structure: double independent
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 0.6kV
Leakage current: 50µA
Load current: 0.25A
Max. forward impulse current: 4.5A
Power dissipation: 0.35W
Max. forward voltage: 1.1V
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 600V; 250mA; 50ns; SOT143B; Ufmax: 1.1V; 0.35W
Type of diode: switching
Semiconductor structure: double independent
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 0.6kV
Leakage current: 50µA
Load current: 0.25A
Max. forward impulse current: 4.5A
Power dissipation: 0.35W
Max. forward voltage: 1.1V
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Reverse recovery time: 50ns
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| BCV62C,215 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Semiconductor structure: common base
Mounting: SMD
Case: SOT143B
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 420...800
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Semiconductor structure: common base
Mounting: SMD
Case: SOT143B
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 420...800
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
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| BCV61B,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Semiconductor structure: common base
Mounting: SMD
Case: SOT143B
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 200...450
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Semiconductor structure: common base
Mounting: SMD
Case: SOT143B
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 200...450
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
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| BCV61C,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Semiconductor structure: common base
Mounting: SMD
Case: SOT143B
Pulsed collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 420...800
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 250mW; SOT143B; common base
Semiconductor structure: common base
Mounting: SMD
Case: SOT143B
Pulsed collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 420...800
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
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| BCV65,215 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 30V; 0.1A; 250mW; SOT143B
Semiconductor structure: common base; common emitter
Mounting: SMD
Case: SOT143B
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 75...800
Polarisation: bipolar
Type of transistor: NPN / PNP
Kind of package: reel; tape
Collector current: 0.1A
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 30V; 0.1A; 250mW; SOT143B
Semiconductor structure: common base; common emitter
Mounting: SMD
Case: SOT143B
Power dissipation: 0.25W
Collector-emitter voltage: 30V
Current gain: 75...800
Polarisation: bipolar
Type of transistor: NPN / PNP
Kind of package: reel; tape
Collector current: 0.1A
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| 74LVC139BQ,115 |
|
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD
Operating temperature: -40...125°C
Case: DHVQFN16
Type of integrated circuit: digital
Family: LVC
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 1.2...3.6V DC
Number of channels: 2
Number of inputs: 3
Technology: CMOS; TTL
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD
Operating temperature: -40...125°C
Case: DHVQFN16
Type of integrated circuit: digital
Family: LVC
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 1.2...3.6V DC
Number of channels: 2
Number of inputs: 3
Technology: CMOS; TTL
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
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| PMEG6010CEH,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
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| PMEG6010CEH.115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 9A
Kind of package: reel; tape
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| 74HC4002D,653 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Quiescent current: 40µA
Family: HC
Kind of package: reel; tape
Delay time: 150ns
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Quiescent current: 40µA
Family: HC
Kind of package: reel; tape
Delay time: 150ns
Supply voltage: 2...6V DC
Technology: CMOS
на замовлення 1830 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 56.16 грн |
| 10+ | 46.26 грн |
| 11+ | 41.89 грн |
| 25+ | 36.93 грн |
| 100+ | 32.05 грн |
| 74HC4002DB,112 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SSOP14; 2÷6VDC; tube; HC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: SSOP14
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SSOP14; 2÷6VDC; tube; HC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: SSOP14
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Technology: CMOS
на замовлення 36 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.86 грн |
| 14+ | 31.80 грн |
| 25+ | 27.42 грн |
| 74HC4002PW,112 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; tube; HC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; tube; HC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Technology: CMOS
на замовлення 2 шт:
термін постачання 14-30 дні (днів)В кошику од. на суму грн.
| 74HC4002PW,118 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Quiescent current: 40µA
Family: HC
Kind of package: reel; tape
Delay time: 150ns
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Quiescent current: 40µA
Family: HC
Kind of package: reel; tape
Delay time: 150ns
Supply voltage: 2...6V DC
Technology: CMOS
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| MJD2873-QJ |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 40...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 65MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 40...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 65MHz
Application: automotive industry
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| PSMN1R2-25YL,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 121W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 121W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN0R7-25YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 235A
Power dissipation: 158W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.47mΩ
Mounting: SMD
Gate charge: 110.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 235A
Power dissipation: 158W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.47mΩ
Mounting: SMD
Gate charge: 110.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN1R3-30YL,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 121W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 121W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN4R2-80YSEX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 698A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 698A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 698A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN4R8-100YSEX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 115A
Pulsed drain current: 653A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 115A
Pulsed drain current: 653A
Power dissipation: 294W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN1R0-40YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; Idm: 1284A; 198W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Pulsed drain current: 1284A
Power dissipation: 198W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.93mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; Idm: 1284A; 198W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Pulsed drain current: 1284A
Power dissipation: 198W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.93mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| PSMN1R2-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 209A
Pulsed drain current: 1181A
Power dissipation: 194W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 2.05mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 209A
Pulsed drain current: 1181A
Power dissipation: 194W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 2.05mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| PSMN3R0-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 90A; Idm: 512A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Pulsed drain current: 512A
Power dissipation: 91W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 46.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 90A; Idm: 512A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Pulsed drain current: 512A
Power dissipation: 91W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 46.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| PSMN7R5-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| PSMN2R4-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 625A
Power dissipation: 106W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 31.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 625A
Power dissipation: 106W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 31.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| PSMNR67-30YLEX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 361A; Idm: 2.07kA; 333W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 361A
Pulsed drain current: 2.07kA
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 361A; Idm: 2.07kA; 333W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 361A
Pulsed drain current: 2.07kA
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMNR58-30YLHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 347A; Idm: 1960A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 347A
Pulsed drain current: 1960A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 347A; Idm: 1960A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 347A
Pulsed drain current: 1960A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BUK7J1R4-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PSMN1R0-40YSHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 277A; Idm: 1564A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 277A
Pulsed drain current: 1564A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 277A; Idm: 1564A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 277A
Pulsed drain current: 1564A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMNR51-25YLHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 380A
Pulsed drain current: 2174A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.46mΩ
Mounting: SMD
Gate charge: 186nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 380A
Pulsed drain current: 2174A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 1.46mΩ
Mounting: SMD
Gate charge: 186nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMNR90-40YLHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 285A; Idm: 1613A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 285A
Pulsed drain current: 1613A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 285A; Idm: 1613A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 285A
Pulsed drain current: 1613A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.