| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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74HC151PW,118 | NEXPERIA |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,multiplexer; Ch: 8; IN: 8; CMOS; SMD; TSSOP16; HC Type of integrated circuit: digital Kind of integrated circuit: 8bit; multiplexer Number of channels: 8 Number of inputs: 8 Mounting: SMD Case: TSSOP16 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape |
на замовлення 1888 шт: термін постачання 14-30 дні (днів) |
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74HC05D,118 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Family: HC Delay time: 135ns Kind of output: open drain Technology: CMOS |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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PSMN057-200P,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 39A Pulsed drain current: 156A Power dissipation: 250W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
на замовлення 548 шт: термін постачання 14-30 дні (днів) |
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MJD44H11J | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK; TO252 Current gain: 40...60 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BUK7Y8R7-60EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 347A; 147W On-state resistance: 19.5mΩ Mounting: SMD Pulsed drain current: 347A Power dissipation: 147W Gate charge: 46nC Polarisation: unipolar Drain current: 61A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
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BUK7Y7R0-40HX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W On-state resistance: 13.6mΩ Mounting: SMD Pulsed drain current: 272A Power dissipation: 64W Gate charge: 26nC Polarisation: unipolar Drain current: 48A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 |
на замовлення 1362 шт: термін постачання 14-30 дні (днів) |
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BUK7M6R3-40EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W On-state resistance: 12.5mΩ Mounting: SMD Pulsed drain current: 319A Power dissipation: 79W Gate charge: 28.1nC Polarisation: unipolar Drain current: 56.4A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Kind of package: reel; tape Case: LFPAK33; SOT1210 |
на замовлення 1489 шт: термін постачання 14-30 дні (днів) |
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BUK7M33-60EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W On-state resistance: 74mΩ Mounting: SMD Pulsed drain current: 98A Power dissipation: 44W Gate charge: 10.9nC Polarisation: unipolar Drain current: 17A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Kind of package: reel; tape Case: LFPAK33; SOT1210 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUK78150-55A/CUX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223 On-state resistance: 278mΩ Mounting: SMD Pulsed drain current: 22A Power dissipation: 8W Polarisation: unipolar Drain current: 3.8A Kind of channel: enhancement Drain-source voltage: 55V Application: automotive industry Type of transistor: N-MOSFET Kind of package: reel; tape Case: SC73; SOT223 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUK763R8-80E,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W On-state resistance: 9.2mΩ Mounting: SMD Pulsed drain current: 778A Power dissipation: 349W Gate charge: 169nC Polarisation: unipolar Drain current: 120A Kind of channel: enhancement Drain-source voltage: 80V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK; SOT404 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BUK7K6R2-40EX | NEXPERIA |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 308A; 68W On-state resistance: 5.8mΩ Mounting: SMD Pulsed drain current: 308A Power dissipation: 68W Gate charge: 32.3nC Polarisation: unipolar Drain current: 40A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56D; SOT1205 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BUK7K8R7-40EX | NEXPERIA |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W On-state resistance: 8.5mΩ Mounting: SMD Pulsed drain current: 22.5A Power dissipation: 53W Gate charge: 21.8nC Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56D; SOT1205 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BUK7K52-60EX | NEXPERIA |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W On-state resistance: 101mΩ Mounting: SMD Pulsed drain current: 71A Power dissipation: 32W Gate charge: 9.2nC Polarisation: unipolar Drain current: 12.6A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK33; SOT1210 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BUK7880-55A/CUX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223 On-state resistance: 148mΩ Mounting: SMD Pulsed drain current: 30A Power dissipation: 8W Gate charge: 12nC Polarisation: unipolar Drain current: 5A Kind of channel: enhancement Drain-source voltage: 55V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SC73; SOT223 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BUK7D36-60EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W On-state resistance: 76mΩ Mounting: SMD Pulsed drain current: 56A Power dissipation: 15W Gate charge: 14nC Polarisation: unipolar Drain current: 8.9A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN6; SOT1220 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BUK7613-60E,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W On-state resistance: 28.2mΩ Mounting: SMD Pulsed drain current: 234A Power dissipation: 96W Gate charge: 22.9nC Polarisation: unipolar Drain current: 41A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK; SOT404 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BUK7D25-40EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W Mounting: SMD Gate charge: 13nC Polarisation: unipolar Technology: Trench Drain current: 12A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Kind of package: reel; tape Case: DFN2020MD-6; SOT1220 On-state resistance: 46mΩ Pulsed drain current: 76A Power dissipation: 15W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BUK7M27-80EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W On-state resistance: 68mΩ Mounting: SMD Pulsed drain current: 121A Power dissipation: 62W Gate charge: 19.5nC Polarisation: unipolar Drain current: 21.3A Kind of channel: enhancement Drain-source voltage: 80V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK33; SOT1210 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BUK7Y3R5-40E,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 622A; 167W On-state resistance: 3.5mΩ Mounting: SMD Pulsed drain current: 622A Power dissipation: 167W Gate charge: 49.4nC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BUK7Y9R9-80EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W On-state resistance: 24.9mΩ Mounting: SMD Pulsed drain current: 354A Power dissipation: 195W Gate charge: 51.6nC Polarisation: unipolar Drain current: 63A Kind of channel: enhancement Drain-source voltage: 80V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BUK7Y153-100EX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W On-state resistance: 424mΩ Mounting: SMD Pulsed drain current: 37.5A Power dissipation: 37.3W Gate charge: 9.4nC Polarisation: unipolar Drain current: 6.7A Kind of channel: enhancement Drain-source voltage: 100V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZV55-B3V6,115 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.4/0.5W; 3.6V; SMD; SOD80C; reel,tape; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±2% Max. forward voltage: 0.9V Case: SOD80C Kind of package: reel; tape Max. load current: 0.25A Semiconductor structure: single diode |
на замовлення 375 шт: термін постачання 14-30 дні (днів) |
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BZV55-C8V2,115 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; Ifmax: 250mA; reel,tape Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Max. forward voltage: 0.9V Case: SOD80C Max. load current: 0.25A Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 5775 шт: термін постачання 14-30 дні (днів) |
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| BZV55-C8V2,135 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; reel,tape; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Max. forward voltage: 0.9V Case: SOD80C Kind of package: reel; tape Max. load current: 0.25A Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | |||||||||||||||
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74LVC00AD,118 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA Type of integrated circuit: digital Mounting: SMD Delay time: 12ns Supply voltage: 1.2V DC; 1.65...3.6V DC Kind of gate: NAND Operating temperature: -40...125°C Technology: CMOS; TTL Quiescent current: 40µA Number of inputs: 2 Kind of package: reel; tape Case: SO14 Family: LVC Number of channels: quad; 4 |
на замовлення 2864 шт: термін постачання 14-30 дні (днів) |
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74LVC00APW,118 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 1.65÷5.5VDC Type of integrated circuit: digital Mounting: SMD Supply voltage: 1.65...5.5V DC Kind of gate: NAND Operating temperature: -40...125°C Technology: CMOS; TTL Quiescent current: 40µA Number of inputs: 2 Kind of package: reel; tape Case: TSSOP14 Family: LVC Number of channels: quad; 4 |
на замовлення 1531 шт: термін постачання 14-30 дні (днів) |
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74LVC00ADB,112 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 1.2÷3.6VDC Type of integrated circuit: digital Mounting: SMD Supply voltage: 1.2...3.6V DC Kind of gate: NAND Operating temperature: -40...125°C Technology: CMOS; TTL Number of inputs: 2 Kind of package: tube Case: SSOP14 Family: LVC Number of channels: quad; 4 |
на замовлення 26 шт: термін постачання 14-30 дні (днів) |
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| 74LVC00ABQ,115 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; -40÷125°C Type of integrated circuit: digital Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN14 Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 1.2V DC; 1.65...3.6V DC Family: LVC Delay time: 12ns Kind of gate: NAND Quiescent current: 40µA |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| GAN080-650EBEZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 29A Pulsed drain current: 58A Case: DFN8080-8 Gate-source voltage: -6...7V On-state resistance: 80mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 240W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| GAN140-650EBEZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 113W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| GAN140-650FBEZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 113W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| GAN190-650EBEZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 125W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| GAN190-650FBEZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 125W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| GAN3R2-100CBEAZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 230A Case: WLCSP8 Gate-source voltage: -4...6V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 12nC Kind of package: tape Kind of channel: enhancement Power dissipation: 394W |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||
| GAN7R0-150LBEZ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 120A Case: FCLGA3 Gate-source voltage: -4...6V On-state resistance: 7mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: tape Kind of channel: enhancement Power dissipation: 28W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
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PDTC123JT-QR | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Application: automotive industry Frequency: 230MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74ALVC164245DGG,118 | NEXPERIA |
Category: Level translatorsDescription: IC: digital; bus transceiver,logic level voltage translator Type of integrated circuit: digital Kind of integrated circuit: bus transceiver; logic level voltage translator Number of channels: 16 Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS; TTL Kind of package: reel; tape Case: TSSOP48 Family: ALVC Mounting: SMD Supply voltage: 1.5...5.5V DC |
на замовлення 1241 шт: термін постачання 14-30 дні (днів) |
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74HC590D,118 | NEXPERIA |
Category: Counters/dividersDescription: IC: digital; 8bit,binary counter; CMOS; SMD; SO16; HC; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: 8bit; binary counter Technology: CMOS Mounting: SMD Case: SO16 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape |
на замовлення 1092 шт: термін постачання 14-30 дні (днів) |
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74HC597PW,118 | NEXPERIA |
Category: Shift registersDescription: IC: digital; CMOS; SMD; TSSOP16; HC; -40÷125°C; 2÷6VDC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel in; serial output; shift register; storage register Technology: CMOS Mounting: SMD Case: TSSOP16 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 74HC590BQ,115 | NEXPERIA |
Category: Counters/dividersDescription: IC: digital; 8bit,binary counter; CMOS; SMD; DHVQFN14; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 8bit; binary counter Technology: CMOS Mounting: SMD Case: DHVQFN14 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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74HC590PW,118 | NEXPERIA |
Category: Counters/dividersDescription: IC: digital; 8bit,binary up counter; CMOS; SMD; TSSOP16; HC Type of integrated circuit: digital Kind of integrated circuit: 8bit; binary up counter Technology: CMOS Mounting: SMD Case: TSSOP16 Family: HC Kind of package: reel; tape Kind of output: 3-state |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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74HC594PWJ | NEXPERIA |
Category: Shift registersDescription: IC: digital; 8bit,register,shift register; Ch: 1; CMOS; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 8bit; register; shift register Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Number of inputs: 5 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
PDZ33B,115 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.4W; 33V; SMD; SOD323; reel,tape; Ifmax: 200mA Max. load current: 0.2A Power dissipation: 0.4W Max. forward voltage: 0.9V Tolerance: ±2% Zener voltage: 33V Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
PDZ33B-QZ | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.4W; 33V; SMD; SOD323; reel,tape; Ifmax: 200mA Max. load current: 0.2A Power dissipation: 0.4W Max. forward voltage: 0.9V Tolerance: ±2% Zener voltage: 33V Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||
|
PDZ33B-QX | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.4W; 33V; SMD; SOD323; reel,tape; Ifmax: 200mA Max. load current: 0.2A Power dissipation: 0.4W Max. forward voltage: 0.9V Tolerance: ±2% Zener voltage: 33V Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||
|
PDZ33BGWX | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.365W; 33V; SMD; SOD123; reel,tape; Ifmax: 200mA Max. load current: 0.2A Power dissipation: 0.365W Max. forward voltage: 0.9V Tolerance: ±2% Zener voltage: 33V Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD123 Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
PDZ10B,115 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Max. forward voltage: 0.9V Case: SOD323 Kind of package: reel; tape Max. load current: 0.2A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
PDZ10B-QF | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Max. forward voltage: 0.9V Case: SOD323 Kind of package: reel; tape Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
PDZ10B-QX | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Max. forward voltage: 0.9V Case: SOD323 Kind of package: reel; tape Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
PDZ10B-QZ | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Max. forward voltage: 0.9V Case: SOD323 Kind of package: reel; tape Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||
|
PDZ10BF | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Max. forward voltage: 0.9V Case: SOD323 Kind of package: reel; tape Max. load current: 0.2A Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
PDZ10BZ | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Max. forward voltage: 0.9V Case: SOD323 Kind of package: reel; tape Max. load current: 0.2A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
74LVCH244AD,112 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20 Operating temperature: -40...125°C Kind of output: 3-state Family: LVCH Supply voltage: 1.2...3.6V DC Kind of package: tube Integrated circuit features: 5V tolerant on inputs/outputs |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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| 74LVCH244ABQ,115 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 2; IN: 5 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal Number of channels: 2 Number of inputs: 5 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN20 Operating temperature: -40...125°C Kind of output: 3-state Family: LVCH Supply voltage: 1.2...3.6V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| 74LVCH244APW,118 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Operating temperature: -40...125°C Kind of output: 3-state Family: LVCH Supply voltage: 1.2...3.6V DC Kind of package: reel; tape Integrated circuit features: 5V tolerant on inputs/outputs |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
|
BAS31,215 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 110V; 150mA; 50ns; SOT23; Ufmax: 1.25V Mounting: SMD Semiconductor structure: double series Case: SOT23 Type of diode: switching Reverse recovery time: 50ns Max. forward impulse current: 10A Max. forward voltage: 1.25V Features of semiconductor devices: avalanche breakdown effect Max. off-state voltage: 110V Load current: 0.15A Kind of package: reel; tape |
на замовлення 1048 шт: термін постачання 14-30 дні (днів) |
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BAS35,215 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 110V; 150mA; 50ns; SOT23; Ufmax: 1.25V Mounting: SMD Semiconductor structure: common anode; double Case: SOT23 Type of diode: switching Reverse recovery time: 50ns Max. forward impulse current: 10A Max. forward voltage: 1.25V Features of semiconductor devices: avalanche breakdown effect Max. off-state voltage: 110V Load current: 0.15A Kind of package: reel; tape |
на замовлення 199 шт: термін постачання 14-30 дні (днів) |
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74HC540D,653 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Case: SO20 Operating temperature: -40...125°C Kind of package: reel; tape Family: HC Number of channels: 8 Supply voltage: 2...6V DC Kind of output: 3-state Technology: CMOS Quiescent current: 160µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
PMEG6002EBF | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SC79,SOD523; SMD; 60V; 0.2A; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 60V Load current: 0.2A Semiconductor structure: single diode Case: SC79; SOD523 Kind of package: reel; tape Capacitance: 20pF Leakage current: 0.31mA Max. forward voltage: 0.6V Max. forward impulse current: 2.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
PMEG6002EB,115 | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SC79,SOD523; SMD; 60V; 0.2A; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 60V Load current: 0.2A Semiconductor structure: single diode Case: SC79; SOD523 Kind of package: reel; tape Max. forward voltage: 0.6V Max. forward impulse current: 2.5A |
товару немає в наявності |
В кошику од. на суму грн. |
| 74HC151PW,118 |
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Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,multiplexer; Ch: 8; IN: 8; CMOS; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; multiplexer
Number of channels: 8
Number of inputs: 8
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,multiplexer; Ch: 8; IN: 8; CMOS; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; multiplexer
Number of channels: 8
Number of inputs: 8
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
на замовлення 1888 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.06 грн |
| 26+ | 16.12 грн |
| 30+ | 14.29 грн |
| 100+ | 12.38 грн |
| 250+ | 11.55 грн |
| 500+ | 11.47 грн |
| 74HC05D,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HC
Delay time: 135ns
Kind of output: open drain
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HC
Delay time: 135ns
Kind of output: open drain
Technology: CMOS
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| PSMN057-200P,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 548 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 173.67 грн |
| 10+ | 168.69 грн |
| MJD44H11J |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK; TO252
Current gain: 40...60
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK; TO252
Current gain: 40...60
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BUK7Y8R7-60EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 347A; 147W
On-state resistance: 19.5mΩ
Mounting: SMD
Pulsed drain current: 347A
Power dissipation: 147W
Gate charge: 46nC
Polarisation: unipolar
Drain current: 61A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 347A; 147W
On-state resistance: 19.5mΩ
Mounting: SMD
Pulsed drain current: 347A
Power dissipation: 147W
Gate charge: 46nC
Polarisation: unipolar
Drain current: 61A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 166.45 грн |
| 10+ | 124.64 грн |
| 25+ | 98.05 грн |
| BUK7Y7R0-40HX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
On-state resistance: 13.6mΩ
Mounting: SMD
Pulsed drain current: 272A
Power dissipation: 64W
Gate charge: 26nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
On-state resistance: 13.6mΩ
Mounting: SMD
Pulsed drain current: 272A
Power dissipation: 64W
Gate charge: 26nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
на замовлення 1362 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 71.59 грн |
| 10+ | 53.18 грн |
| 25+ | 47.37 грн |
| 100+ | 39.89 грн |
| 250+ | 35.73 грн |
| 500+ | 33.24 грн |
| 1000+ | 31.58 грн |
| BUK7M6R3-40EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
On-state resistance: 12.5mΩ
Mounting: SMD
Pulsed drain current: 319A
Power dissipation: 79W
Gate charge: 28.1nC
Polarisation: unipolar
Drain current: 56.4A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
On-state resistance: 12.5mΩ
Mounting: SMD
Pulsed drain current: 319A
Power dissipation: 79W
Gate charge: 28.1nC
Polarisation: unipolar
Drain current: 56.4A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK33; SOT1210
на замовлення 1489 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 81.43 грн |
| 10+ | 57.34 грн |
| 25+ | 51.52 грн |
| 100+ | 47.37 грн |
| 250+ | 45.70 грн |
| 500+ | 40.72 грн |
| 1000+ | 39.89 грн |
| BUK7M33-60EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
On-state resistance: 74mΩ
Mounting: SMD
Pulsed drain current: 98A
Power dissipation: 44W
Gate charge: 10.9nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
On-state resistance: 74mΩ
Mounting: SMD
Pulsed drain current: 98A
Power dissipation: 44W
Gate charge: 10.9nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK33; SOT1210
товару немає в наявності
В кошику
од. на суму грн.
| BUK78150-55A/CUX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
On-state resistance: 278mΩ
Mounting: SMD
Pulsed drain current: 22A
Power dissipation: 8W
Polarisation: unipolar
Drain current: 3.8A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SC73; SOT223
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
On-state resistance: 278mΩ
Mounting: SMD
Pulsed drain current: 22A
Power dissipation: 8W
Polarisation: unipolar
Drain current: 3.8A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SC73; SOT223
товару немає в наявності
В кошику
од. на суму грн.
| BUK763R8-80E,118 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
On-state resistance: 9.2mΩ
Mounting: SMD
Pulsed drain current: 778A
Power dissipation: 349W
Gate charge: 169nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
On-state resistance: 9.2mΩ
Mounting: SMD
Pulsed drain current: 778A
Power dissipation: 349W
Gate charge: 169nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
товару немає в наявності
В кошику
од. на суму грн.
| BUK7K6R2-40EX |
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Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 308A; 68W
On-state resistance: 5.8mΩ
Mounting: SMD
Pulsed drain current: 308A
Power dissipation: 68W
Gate charge: 32.3nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56D; SOT1205
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 308A; 68W
On-state resistance: 5.8mΩ
Mounting: SMD
Pulsed drain current: 308A
Power dissipation: 68W
Gate charge: 32.3nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56D; SOT1205
товару немає в наявності
В кошику
од. на суму грн.
| BUK7K8R7-40EX |
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Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W
On-state resistance: 8.5mΩ
Mounting: SMD
Pulsed drain current: 22.5A
Power dissipation: 53W
Gate charge: 21.8nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56D; SOT1205
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W
On-state resistance: 8.5mΩ
Mounting: SMD
Pulsed drain current: 22.5A
Power dissipation: 53W
Gate charge: 21.8nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56D; SOT1205
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| BUK7K52-60EX |
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Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
On-state resistance: 101mΩ
Mounting: SMD
Pulsed drain current: 71A
Power dissipation: 32W
Gate charge: 9.2nC
Polarisation: unipolar
Drain current: 12.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
On-state resistance: 101mΩ
Mounting: SMD
Pulsed drain current: 71A
Power dissipation: 32W
Gate charge: 9.2nC
Polarisation: unipolar
Drain current: 12.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK33; SOT1210
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| BUK7880-55A/CUX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
On-state resistance: 148mΩ
Mounting: SMD
Pulsed drain current: 30A
Power dissipation: 8W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC73; SOT223
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
On-state resistance: 148mΩ
Mounting: SMD
Pulsed drain current: 30A
Power dissipation: 8W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC73; SOT223
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| BUK7D36-60EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
On-state resistance: 76mΩ
Mounting: SMD
Pulsed drain current: 56A
Power dissipation: 15W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 8.9A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN6; SOT1220
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
On-state resistance: 76mΩ
Mounting: SMD
Pulsed drain current: 56A
Power dissipation: 15W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 8.9A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN6; SOT1220
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| BUK7613-60E,118 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
On-state resistance: 28.2mΩ
Mounting: SMD
Pulsed drain current: 234A
Power dissipation: 96W
Gate charge: 22.9nC
Polarisation: unipolar
Drain current: 41A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
On-state resistance: 28.2mΩ
Mounting: SMD
Pulsed drain current: 234A
Power dissipation: 96W
Gate charge: 22.9nC
Polarisation: unipolar
Drain current: 41A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
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| BUK7D25-40EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Mounting: SMD
Gate charge: 13nC
Polarisation: unipolar
Technology: Trench
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
On-state resistance: 46mΩ
Pulsed drain current: 76A
Power dissipation: 15W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Mounting: SMD
Gate charge: 13nC
Polarisation: unipolar
Technology: Trench
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
On-state resistance: 46mΩ
Pulsed drain current: 76A
Power dissipation: 15W
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| BUK7M27-80EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
On-state resistance: 68mΩ
Mounting: SMD
Pulsed drain current: 121A
Power dissipation: 62W
Gate charge: 19.5nC
Polarisation: unipolar
Drain current: 21.3A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
On-state resistance: 68mΩ
Mounting: SMD
Pulsed drain current: 121A
Power dissipation: 62W
Gate charge: 19.5nC
Polarisation: unipolar
Drain current: 21.3A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK33; SOT1210
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| BUK7Y3R5-40E,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 622A; 167W
On-state resistance: 3.5mΩ
Mounting: SMD
Pulsed drain current: 622A
Power dissipation: 167W
Gate charge: 49.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 622A; 167W
On-state resistance: 3.5mΩ
Mounting: SMD
Pulsed drain current: 622A
Power dissipation: 167W
Gate charge: 49.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
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| BUK7Y9R9-80EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
On-state resistance: 24.9mΩ
Mounting: SMD
Pulsed drain current: 354A
Power dissipation: 195W
Gate charge: 51.6nC
Polarisation: unipolar
Drain current: 63A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
On-state resistance: 24.9mΩ
Mounting: SMD
Pulsed drain current: 354A
Power dissipation: 195W
Gate charge: 51.6nC
Polarisation: unipolar
Drain current: 63A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
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| BUK7Y153-100EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W
On-state resistance: 424mΩ
Mounting: SMD
Pulsed drain current: 37.5A
Power dissipation: 37.3W
Gate charge: 9.4nC
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W
On-state resistance: 424mΩ
Mounting: SMD
Pulsed drain current: 37.5A
Power dissipation: 37.3W
Gate charge: 9.4nC
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
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| BZV55-B3V6,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 3.6V; SMD; SOD80C; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD80C
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 3.6V; SMD; SOD80C; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD80C
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
на замовлення 375 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.95 грн |
| 63+ | 6.65 грн |
| 71+ | 5.90 грн |
| BZV55-C8V2,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; Ifmax: 250mA; reel,tape
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; Ifmax: 250mA; reel,tape
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 5775 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.26 грн |
| 105+ | 3.99 грн |
| 155+ | 2.69 грн |
| 500+ | 2.15 грн |
| 1000+ | 1.94 грн |
| 2500+ | 1.79 грн |
| BZV55-C8V2,135 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
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Мінімальне замовлення: 25 шт
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| 74LVC00AD,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 1.2V DC; 1.65...3.6V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: LVC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 1.2V DC; 1.65...3.6V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: LVC
Number of channels: quad; 4
на замовлення 2864 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.58 грн |
| 31+ | 13.46 грн |
| 36+ | 11.72 грн |
| 74LVC00APW,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 1.65÷5.5VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: LVC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 1.65÷5.5VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: LVC
Number of channels: quad; 4
на замовлення 1531 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.11 грн |
| 33+ | 12.63 грн |
| 38+ | 11.22 грн |
| 74LVC00ADB,112 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 1.2÷3.6VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1.2...3.6V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Number of inputs: 2
Kind of package: tube
Case: SSOP14
Family: LVC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 1.2÷3.6VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1.2...3.6V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Number of inputs: 2
Kind of package: tube
Case: SSOP14
Family: LVC
Number of channels: quad; 4
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.27 грн |
| 26+ | 15.79 грн |
| 74LVC00ABQ,115 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; -40÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.2V DC; 1.65...3.6V DC
Family: LVC
Delay time: 12ns
Kind of gate: NAND
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; -40÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.2V DC; 1.65...3.6V DC
Family: LVC
Delay time: 12ns
Kind of gate: NAND
Quiescent current: 40µA
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.21 грн |
| 41+ | 10.14 грн |
| 100+ | 9.14 грн |
| 500+ | 8.48 грн |
| 1000+ | 8.06 грн |
| 3000+ | 7.40 грн |
| GAN080-650EBEZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 58A
Case: DFN8080-8
Gate-source voltage: -6...7V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 240W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 58A
Case: DFN8080-8
Gate-source voltage: -6...7V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 240W
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Мінімальне замовлення: 2500 шт
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| GAN140-650EBEZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| GAN140-650FBEZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
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Мінімальне замовлення: 2500 шт
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| GAN190-650EBEZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
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Мінімальне замовлення: 2500 шт
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| GAN190-650FBEZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
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Мінімальне замовлення: 2500 шт
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| GAN3R2-100CBEAZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 230A
Case: WLCSP8
Gate-source voltage: -4...6V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 394W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 230A
Case: WLCSP8
Gate-source voltage: -4...6V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 394W
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Мінімальне замовлення: 1500 шт
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| GAN7R0-150LBEZ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 120A
Case: FCLGA3
Gate-source voltage: -4...6V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 28W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 120A
Case: FCLGA3
Gate-source voltage: -4...6V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 28W
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Мінімальне замовлення: 2500 шт
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| PDTC123JT-QR |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Frequency: 230MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Frequency: 230MHz
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| 74ALVC164245DGG,118 |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; bus transceiver,logic level voltage translator
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; logic level voltage translator
Number of channels: 16
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS; TTL
Kind of package: reel; tape
Case: TSSOP48
Family: ALVC
Mounting: SMD
Supply voltage: 1.5...5.5V DC
Category: Level translators
Description: IC: digital; bus transceiver,logic level voltage translator
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; logic level voltage translator
Number of channels: 16
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS; TTL
Kind of package: reel; tape
Case: TSSOP48
Family: ALVC
Mounting: SMD
Supply voltage: 1.5...5.5V DC
на замовлення 1241 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.96 грн |
| 10+ | 69.80 грн |
| 100+ | 51.52 грн |
| 500+ | 46.53 грн |
| 1000+ | 44.04 грн |
| 74HC590D,118 |
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Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 8bit,binary counter; CMOS; SMD; SO16; HC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary counter
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; 8bit,binary counter; CMOS; SMD; SO16; HC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary counter
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
на замовлення 1092 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.69 грн |
| 12+ | 36.98 грн |
| 100+ | 33.24 грн |
| 74HC597PW,118 |
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Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital; CMOS; SMD; TSSOP16; HC; -40÷125°C; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register; storage register
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; CMOS; SMD; TSSOP16; HC; -40÷125°C; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register; storage register
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
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| 74HC590BQ,115 |
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Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 8bit,binary counter; CMOS; SMD; DHVQFN14; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary counter
Technology: CMOS
Mounting: SMD
Case: DHVQFN14
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; 8bit,binary counter; CMOS; SMD; DHVQFN14; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary counter
Technology: CMOS
Mounting: SMD
Case: DHVQFN14
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| 74HC590PW,118 |
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Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 8bit,binary up counter; CMOS; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary up counter
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Kind of package: reel; tape
Kind of output: 3-state
Category: Counters/dividers
Description: IC: digital; 8bit,binary up counter; CMOS; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary up counter
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Kind of package: reel; tape
Kind of output: 3-state
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| 74HC594PWJ |
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Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,register,shift register; Ch: 1; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; register; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 5
Category: Shift registers
Description: IC: digital; 8bit,register,shift register; Ch: 1; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; register; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 5
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| PDZ33B,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 33V; SMD; SOD323; reel,tape; Ifmax: 200mA
Max. load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 0.9V
Tolerance: ±2%
Zener voltage: 33V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 33V; SMD; SOD323; reel,tape; Ifmax: 200mA
Max. load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 0.9V
Tolerance: ±2%
Zener voltage: 33V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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| PDZ33B-QZ |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 33V; SMD; SOD323; reel,tape; Ifmax: 200mA
Max. load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 0.9V
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 33V; SMD; SOD323; reel,tape; Ifmax: 200mA
Max. load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 0.9V
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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Мінімальне замовлення: 25 шт
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| PDZ33B-QX |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 33V; SMD; SOD323; reel,tape; Ifmax: 200mA
Max. load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 0.9V
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 33V; SMD; SOD323; reel,tape; Ifmax: 200mA
Max. load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 0.9V
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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Мінімальне замовлення: 25 шт
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| PDZ33BGWX |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.365W; 33V; SMD; SOD123; reel,tape; Ifmax: 200mA
Max. load current: 0.2A
Power dissipation: 0.365W
Max. forward voltage: 0.9V
Tolerance: ±2%
Zener voltage: 33V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.365W; 33V; SMD; SOD123; reel,tape; Ifmax: 200mA
Max. load current: 0.2A
Power dissipation: 0.365W
Max. forward voltage: 0.9V
Tolerance: ±2%
Zener voltage: 33V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Type of diode: Zener
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| PDZ10B,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
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| PDZ10B-QF |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| PDZ10B-QX |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
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| PDZ10B-QZ |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
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Мінімальне замовлення: 25 шт
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| PDZ10BF |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| PDZ10BZ |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 10V; SMD; SOD323; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
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| 74LVCH244AD,112 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVCH
Supply voltage: 1.2...3.6V DC
Kind of package: tube
Integrated circuit features: 5V tolerant on inputs/outputs
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVCH
Supply voltage: 1.2...3.6V DC
Kind of package: tube
Integrated circuit features: 5V tolerant on inputs/outputs
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34.90 грн |
| 74LVCH244ABQ,115 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 2; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 2
Number of inputs: 5
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVCH
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 2; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 2
Number of inputs: 5
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVCH
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| 74LVCH244APW,118 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVCH
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Integrated circuit features: 5V tolerant on inputs/outputs
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVCH
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Integrated circuit features: 5V tolerant on inputs/outputs
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| BAS31,215 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 110V; 150mA; 50ns; SOT23; Ufmax: 1.25V
Mounting: SMD
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 10A
Max. forward voltage: 1.25V
Features of semiconductor devices: avalanche breakdown effect
Max. off-state voltage: 110V
Load current: 0.15A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 110V; 150mA; 50ns; SOT23; Ufmax: 1.25V
Mounting: SMD
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 10A
Max. forward voltage: 1.25V
Features of semiconductor devices: avalanche breakdown effect
Max. off-state voltage: 110V
Load current: 0.15A
Kind of package: reel; tape
на замовлення 1048 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.58 грн |
| 33+ | 12.96 грн |
| 50+ | 11.05 грн |
| 100+ | 9.06 грн |
| 500+ | 8.14 грн |
| 1000+ | 7.56 грн |
| BAS35,215 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 110V; 150mA; 50ns; SOT23; Ufmax: 1.25V
Mounting: SMD
Semiconductor structure: common anode; double
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 10A
Max. forward voltage: 1.25V
Features of semiconductor devices: avalanche breakdown effect
Max. off-state voltage: 110V
Load current: 0.15A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 110V; 150mA; 50ns; SOT23; Ufmax: 1.25V
Mounting: SMD
Semiconductor structure: common anode; double
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 10A
Max. forward voltage: 1.25V
Features of semiconductor devices: avalanche breakdown effect
Max. off-state voltage: 110V
Load current: 0.15A
Kind of package: reel; tape
на замовлення 199 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.90 грн |
| 40+ | 10.55 грн |
| 52+ | 8.06 грн |
| 100+ | 7.23 грн |
| 74HC540D,653 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Number of channels: 8
Supply voltage: 2...6V DC
Kind of output: 3-state
Technology: CMOS
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Number of channels: 8
Supply voltage: 2...6V DC
Kind of output: 3-state
Technology: CMOS
Quiescent current: 160µA
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| PMEG6002EBF |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 60V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Kind of package: reel; tape
Capacitance: 20pF
Leakage current: 0.31mA
Max. forward voltage: 0.6V
Max. forward impulse current: 2.5A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 60V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Kind of package: reel; tape
Capacitance: 20pF
Leakage current: 0.31mA
Max. forward voltage: 0.6V
Max. forward impulse current: 2.5A
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| PMEG6002EB,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 60V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Kind of package: reel; tape
Max. forward voltage: 0.6V
Max. forward impulse current: 2.5A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 60V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Kind of package: reel; tape
Max. forward voltage: 0.6V
Max. forward impulse current: 2.5A
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