| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BC807DSF | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 45V; 0.5A; 600mW; SC74,SOT457,TSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.6W Case: SC74; SOT457; TSOP6 Pulsed collector current: 1A Current gain: 40...400 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HC21D,653 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA Type of integrated circuit: digital Number of channels: dual; 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...125°C Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Quiescent current: 40µA Number of inputs: 4 Kind of gate: AND |
на замовлення 1872 шт: термін постачання 14-30 дні (днів) |
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74HC21DB,112 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SSOP14; tube; HC Type of integrated circuit: digital Number of channels: dual; 2 Technology: CMOS Mounting: SMD Case: SSOP14 Family: HC Kind of package: tube Number of inputs: 4 Kind of gate: AND |
на замовлення 41 шт: термін постачання 14-30 дні (днів) |
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BAS20,215 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape Features of semiconductor devices: fast switching Reverse recovery time: 50ns |
на замовлення 4971 шт: термін постачання 14-30 дні (днів) |
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BAS20,235 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape Features of semiconductor devices: fast switching Reverse recovery time: 50ns |
на замовлення 8617 шт: термін постачання 14-30 дні (днів) |
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74AHCT1G14GW,125 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; -40÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP5 Manufacturer series: Mini Logic Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AHCT |
на замовлення 681 шт: термін постачання 14-30 дні (днів) |
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PZU14B2,115 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.55W; 14V; SMD; reel,tape; SOD323F; Ifmax: 200mA Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOD323F Type of diode: Zener Max. load current: 0.2A Power dissipation: 0.55W Max. forward voltage: 1.1V Tolerance: ±2% Zener voltage: 14V |
на замовлення 407 шт: термін постачання 14-30 дні (днів) |
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74HCT541PW,118 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: HCT Quiescent current: 160µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74VHCT541BQ,115 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal Number of channels: 1 Technology: TTL Mounting: SMD Case: DHVQFN20 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: VHCT Number of inputs: 10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74VHCT541D,118 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal Number of channels: 1 Technology: TTL Mounting: SMD Case: SO20 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: VHCT Number of inputs: 10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74VHCT541PW,118 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal Number of channels: 1 Technology: TTL Mounting: SMD Case: TSSOP20 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: VHCT Number of inputs: 10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PSMN2R1-40PLQ | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 1075A Power dissipation: 293W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: THT Gate charge: 168.9nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN2R8-40PS,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 797A Power dissipation: 211W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN2R6-40YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 131W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN2R2-40PS,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 306W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN2R0-60PS,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 192nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN2R5-60PLQ | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 1002A Power dissipation: 349W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 223nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PSMN2R8-40YSDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 119A Pulsed drain current: 658A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R4-30MLDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 70A Pulsed drain current: 580A Power dissipation: 91W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R0-100SSFJ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 189A Pulsed drain current: 1070A Power dissipation: 341W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 242nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R8-80BS,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 824A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.12mΩ Mounting: SMD Gate charge: 139nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R0-25MLDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 70A Pulsed drain current: 555A Power dissipation: 74W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 34.4nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R0-60PSRQ | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 1135A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 192nC Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R2-40YSDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 789A Power dissipation: 166W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R7-30BL,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 730A Power dissipation: 170W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R8-25MLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 70A Pulsed drain current: 536A Power dissipation: 88W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 3.25mΩ Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R0-25YLDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 127A Pulsed drain current: 722A Power dissipation: 115W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.95mΩ Mounting: SMD Gate charge: 34.1nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R0-30YL,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 667A Power dissipation: 97W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R0-30YLDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 793A Power dissipation: 142W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R0-40YLDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 143A Pulsed drain current: 807A Power dissipation: 166W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PSMN2R2-25YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.05mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PSMN2R2-40BS,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 962A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 962A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 3.76mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R5-30YL,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 580A Power dissipation: 88W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.47mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R5-40YLDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 121A Pulsed drain current: 682A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R6-30YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 575A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.35mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PSMN2R6-60PSQ | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 961A Power dissipation: 326W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PSMN2R9-25YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Pulsed drain current: 517A Power dissipation: 92W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.45mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PMBTA56,215 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Pulsed collector current: 1A |
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В кошику од. на суму грн. | ||||||||||||||||
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PMBTA56-QR | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: 7 inch reel; tape Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||||
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PUMB20,115 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.3W Kind of transistor: BRT Polarisation: bipolar Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Case: SC88; SOT363; TSSOP6 Frequency: 180MHz |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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PUMB30,115 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; 2.2kΩ Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.3W Kind of transistor: BRT Polarisation: bipolar Collector-emitter voltage: 50V Base resistor: 2.2kΩ Case: SC88; SOT363; TSSOP6 Frequency: 180MHz |
на замовлення 160 шт: термін постачання 14-30 дні (днів) |
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| 74LVC2T45GN,115 | NEXPERIA |
Category: Level translatorsDescription: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 2bit; 3-state; transceiver; translator Number of channels: 1 Technology: CMOS; TTL Supply voltage: 1.2...5.5V DC Mounting: SMD Case: XSON8 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Family: LVC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74LVC2T45GS-Q100X | NEXPERIA |
Category: Level translatorsDescription: IC: digital; 2bit,3-state,bidirectional,transceiver,translator Type of integrated circuit: digital Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator Number of channels: 2 Technology: CMOS Supply voltage: 1.2...5.5V DC Mounting: SMD Case: XSON8 Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC |
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| 74LVC2T45GS,115 | NEXPERIA |
Category: Level translatorsDescription: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 2bit; 3-state; transceiver; translator Number of channels: 1 Technology: CMOS; TTL Supply voltage: 1.2...5.5V DC Mounting: SMD Case: XSON8 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Family: LVC |
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| 74LVC2T45GT-Q100X | NEXPERIA |
Category: Level translatorsDescription: IC: digital; 2bit,3-state,bidirectional,transceiver,translator Type of integrated circuit: digital Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator Number of channels: 2 Technology: CMOS Supply voltage: 1.2...5.5V DC Mounting: SMD Case: XSON8 Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC |
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В кошику од. на суму грн. | |||||||||||||||||
| 74LVC2T45GT,115 | NEXPERIA |
Category: Level translatorsDescription: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 2bit; 3-state; transceiver; translator Number of channels: 1 Technology: CMOS; TTL Supply voltage: 1.2...5.5V DC Mounting: SMD Case: XSON8 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Family: LVC |
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|
74LVC74AD,118 | NEXPERIA |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; LVC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS; TTL Mounting: SMD Case: SO14 Operating temperature: -40...125°C Family: LVC Supply voltage: 1.2...3.6V DC Kind of package: reel; tape Trigger: positive-edge-triggered |
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| 74LVC74ABQ,115 | NEXPERIA |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; LVC Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN14 Operating temperature: -40...125°C Family: LVC Supply voltage: 1.2...3.6V DC Kind of package: reel; tape Trigger: positive-edge-triggered |
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|
74LVC74APW,118 | NEXPERIA |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; LVC Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Operating temperature: -40...125°C Family: LVC Supply voltage: 1.2...3.6V DC Kind of package: reel; tape Trigger: positive-edge-triggered |
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|
74AHCT14D.112 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; AHCT; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Kind of input: with Schmitt trigger Kind of package: tube Technology: CMOS; TTL Manufacturer series: AHCT |
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|
74AHCT14D,118 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Quiescent current: 40µA Kind of input: with Schmitt trigger Family: AHCT Kind of package: reel; tape Technology: CMOS; TTL |
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В кошику од. на суму грн. | ||||||||||||||||
|
BSS63,215 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB Mounting: SMD Frequency: 85MHz Polarisation: bipolar Type of transistor: PNP Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 100V Kind of package: 7 inch reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||
| BSS63-QR | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB Mounting: SMD Frequency: 85MHz Application: automotive industry Polarisation: bipolar Type of transistor: PNP Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 100V Kind of package: 7 inch reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
|
BAS16W.115 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 175mA Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching |
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В кошику од. на суму грн. | ||||||||||||||||
|
BAS16W-QX | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V; 0.2W Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 175mA Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: fast switching |
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|
BAS16WF | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 175mA Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching |
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В кошику од. на суму грн. | ||||||||||||||||
| PCA9555PWJ | NEXPERIA |
Category: Interfaces others - integrated circuitsDescription: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD Type of integrated circuit: interface Kind of integrated circuit: 16bit; I/O expander Supply voltage: 2.3...5.5V DC Interface: I2C; SMBus Mounting: SMD Case: TSSOP24 Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
74HC1G86GW,125 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; Mini Logic; 2÷6VDC Type of integrated circuit: digital Kind of gate: XOR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP5 Manufacturer series: Mini Logic Supply voltage: 2...6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: HC |
на замовлення 3002 шт: термін постачання 14-30 дні (днів) |
|
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|
PBSS4350T-QVL | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 1.2W Case: SOT23; TO236AB Pulsed collector current: 5A Mounting: SMD Kind of package: 11 inch reel; tape Frequency: 100MHz Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||||
|
PBSS4350TVL | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 1.2W Case: SOT23; TO236AB Pulsed collector current: 5A Mounting: SMD Kind of package: 11 inch reel; tape Frequency: 100MHz |
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В кошику од. на суму грн. |
| BC807DSF |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.5A; 600mW; SC74,SOT457,TSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.6W
Case: SC74; SOT457; TSOP6
Pulsed collector current: 1A
Current gain: 40...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.5A; 600mW; SC74,SOT457,TSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.6W
Case: SC74; SOT457; TSOP6
Pulsed collector current: 1A
Current gain: 40...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
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| 74HC21D,653 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 40µA
Number of inputs: 4
Kind of gate: AND
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 40µA
Number of inputs: 4
Kind of gate: AND
на замовлення 1872 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.36 грн |
| 25+ | 17.24 грн |
| 28+ | 15.06 грн |
| 50+ | 13.71 грн |
| 100+ | 12.53 грн |
| 74HC21DB,112 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SSOP14; tube; HC
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SSOP14
Family: HC
Kind of package: tube
Number of inputs: 4
Kind of gate: AND
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SSOP14; tube; HC
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SSOP14
Family: HC
Kind of package: tube
Number of inputs: 4
Kind of gate: AND
на замовлення 41 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.18 грн |
| 19+ | 22.80 грн |
| 25+ | 21.11 грн |
| BAS20,215 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Reverse recovery time: 50ns
на замовлення 4971 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.34 грн |
| 120+ | 3.53 грн |
| 143+ | 2.96 грн |
| 187+ | 2.25 грн |
| 500+ | 1.67 грн |
| 1000+ | 1.56 грн |
| 3000+ | 1.37 грн |
| BAS20,235 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Reverse recovery time: 50ns
на замовлення 8617 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.25 грн |
| 91+ | 4.63 грн |
| 159+ | 2.66 грн |
| 205+ | 2.06 грн |
| 250+ | 1.84 грн |
| 500+ | 1.55 грн |
| 1000+ | 1.40 грн |
| 2500+ | 1.29 грн |
| 74AHCT1G14GW,125 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AHCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AHCT
на замовлення 681 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.25 грн |
| 77+ | 5.47 грн |
| 92+ | 4.58 грн |
| 102+ | 4.13 грн |
| 250+ | 3.82 грн |
| 500+ | 3.65 грн |
| PZU14B2,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 14V; SMD; reel,tape; SOD323F; Ifmax: 200mA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.55W
Max. forward voltage: 1.1V
Tolerance: ±2%
Zener voltage: 14V
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 14V; SMD; reel,tape; SOD323F; Ifmax: 200mA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.55W
Max. forward voltage: 1.1V
Tolerance: ±2%
Zener voltage: 14V
на замовлення 407 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.93 грн |
| 34+ | 12.62 грн |
| 100+ | 6.06 грн |
| 74HCT541PW,118 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Quiescent current: 160µA
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В кошику
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| 74VHCT541BQ,115 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
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| 74VHCT541D,118 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
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| 74VHCT541PW,118 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
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| PSMN2R1-40PLQ |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1075A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 168.9nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1075A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 168.9nC
Kind of package: tube
Kind of channel: enhancement
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| PSMN2R8-40PS,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 797A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 797A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
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| PSMN2R6-40YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 131W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 131W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R2-40PS,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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| PSMN2R0-60PS,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhancement
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| PSMN2R5-60PLQ |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 1002A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 1002A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Kind of channel: enhancement
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| PSMN2R8-40YSDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Pulsed drain current: 658A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Pulsed drain current: 658A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R4-30MLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: NextPowerS3
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| PSMN2R0-100SSFJ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R8-80BS,118 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R0-25MLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R0-60PSRQ |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1135A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
Technology: NextPowerS3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1135A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R2-40YSDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 789A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 789A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R7-30BL,118 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R8-25MLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R0-25YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R0-30YL,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R0-30YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R0-40YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R2-25YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R2-40BS,118 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 962A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 962A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.76mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 962A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 962A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.76mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R5-30YL,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R5-40YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 682A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 682A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R6-30YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R6-60PSQ |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 961A
Power dissipation: 326W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 961A
Power dissipation: 326W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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| PSMN2R9-25YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 517A
Power dissipation: 92W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 517A
Power dissipation: 92W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PMBTA56,215 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed collector current: 1A
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| PMBTA56-QR |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
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| PUMB20,115 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
на замовлення 50 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.41 грн |
| PUMB30,115 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
на замовлення 160 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.53 грн |
| 120+ | 3.53 грн |
| 160+ | 2.52 грн |
| 74LVC2T45GN,115 |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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| 74LVC2T45GS-Q100X |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
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| 74LVC2T45GS,115 |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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| 74LVC2T45GT-Q100X |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
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| 74LVC2T45GT,115 |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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| 74LVC74AD,118 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; LVC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; LVC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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| 74LVC74ABQ,115 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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| 74LVC74APW,118 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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| 74AHCT14D.112 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; AHCT; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Kind of package: tube
Technology: CMOS; TTL
Manufacturer series: AHCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; AHCT; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Kind of package: tube
Technology: CMOS; TTL
Manufacturer series: AHCT
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| 74AHCT14D,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: AHCT
Kind of package: reel; tape
Technology: CMOS; TTL
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: AHCT
Kind of package: reel; tape
Technology: CMOS; TTL
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| BSS63,215 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Frequency: 85MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 100V
Kind of package: 7 inch reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Frequency: 85MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 100V
Kind of package: 7 inch reel; tape
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| BSS63-QR |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Frequency: 85MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 100V
Kind of package: 7 inch reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Frequency: 85MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 100V
Kind of package: 7 inch reel; tape
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| BAS16W.115 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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| BAS16W-QX |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V; 0.2W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V; 0.2W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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| BAS16WF |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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| PCA9555PWJ |
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Виробник: NEXPERIA
Category: Interfaces others - integrated circuits
Description: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD
Type of integrated circuit: interface
Kind of integrated circuit: 16bit; I/O expander
Supply voltage: 2.3...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Category: Interfaces others - integrated circuits
Description: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD
Type of integrated circuit: interface
Kind of integrated circuit: 16bit; I/O expander
Supply voltage: 2.3...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
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| 74HC1G86GW,125 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
на замовлення 3002 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.15 грн |
| 81+ | 5.22 грн |
| 96+ | 4.41 грн |
| 108+ | 3.89 грн |
| 250+ | 3.59 грн |
| 500+ | 3.42 грн |
| 1000+ | 3.08 грн |
| 3000+ | 3.05 грн |
| PBSS4350T-QVL |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
Application: automotive industry
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од. на суму грн.
| PBSS4350TVL |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.















