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BC807DSF BC807DSF NEXPERIA BC807DS.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.5A; 600mW; SC74,SOT457,TSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.6W
Case: SC74; SOT457; TSOP6
Pulsed collector current: 1A
Current gain: 40...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
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74HC21D,653 74HC21D,653 NEXPERIA 74HC21D,653.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 40µA
Number of inputs: 4
Kind of gate: AND
на замовлення 1872 шт:
термін постачання 14-30 дні (днів)
18+25.36 грн
25+17.24 грн
28+15.06 грн
50+13.71 грн
100+12.53 грн
Мінімальне замовлення: 18
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74HC21DB,112 74HC21DB,112 NEXPERIA 74HC21.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SSOP14; tube; HC
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SSOP14
Family: HC
Kind of package: tube
Number of inputs: 4
Kind of gate: AND
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
17+27.18 грн
19+22.80 грн
25+21.11 грн
Мінімальне замовлення: 17
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BAS20,215 BAS20,215 NEXPERIA BAS19_20_21.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Reverse recovery time: 50ns
на замовлення 4971 шт:
термін постачання 14-30 дні (днів)
72+6.34 грн
120+3.53 грн
143+2.96 грн
187+2.25 грн
500+1.67 грн
1000+1.56 грн
3000+1.37 грн
Мінімальне замовлення: 72
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BAS20,235 BAS20,235 NEXPERIA BAS20.235.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Reverse recovery time: 50ns
на замовлення 8617 шт:
термін постачання 14-30 дні (днів)
63+7.25 грн
91+4.63 грн
159+2.66 грн
205+2.06 грн
250+1.84 грн
500+1.55 грн
1000+1.40 грн
2500+1.29 грн
Мінімальне замовлення: 63
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74AHCT1G14GW,125 74AHCT1G14GW,125 NEXPERIA 74AHC1G14G-DTE.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AHCT
на замовлення 681 шт:
термін постачання 14-30 дні (днів)
63+7.25 грн
77+5.47 грн
92+4.58 грн
102+4.13 грн
250+3.82 грн
500+3.65 грн
Мінімальне замовлення: 63
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PZU14B2,115 PZU14B2,115 NEXPERIA PZUXB_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 14V; SMD; reel,tape; SOD323F; Ifmax: 200mA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.55W
Max. forward voltage: 1.1V
Tolerance: ±2%
Zener voltage: 14V
на замовлення 407 шт:
термін постачання 14-30 дні (днів)
23+19.93 грн
34+12.62 грн
100+6.06 грн
Мінімальне замовлення: 23
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74HCT541PW,118 74HCT541PW,118 NEXPERIA 74HCT541PW,118.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Quiescent current: 160µA
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74VHCT541BQ,115 NEXPERIA 74VHC_VHCT541.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
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74VHCT541D,118 NEXPERIA 74VHC_VHCT541.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
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74VHCT541PW,118 NEXPERIA 74VHC_VHCT541.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
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PSMN2R1-40PLQ PSMN2R1-40PLQ NEXPERIA PSMN2R1-40PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1075A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 168.9nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R8-40PS,127 PSMN2R8-40PS,127 NEXPERIA PSMN2R8-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 797A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R6-40YS,115 PSMN2R6-40YS,115 NEXPERIA PSMN2R6-40YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 131W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R2-40PS,127 PSMN2R2-40PS,127 NEXPERIA PSMN2R2-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R0-60PS,127 PSMN2R0-60PS,127 NEXPERIA PSMN2R0-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R5-60PLQ PSMN2R5-60PLQ NEXPERIA PSMN2R5-60PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 1002A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R8-40YSDX NEXPERIA PSMN2R8-40YSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Pulsed drain current: 658A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R4-30MLDX NEXPERIA PSMN2R4-30MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: NextPowerS3
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PSMN2R0-100SSFJ NEXPERIA PSMN2R0-100SSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R8-80BS,118 NEXPERIA PSMN2R8-80BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-25MLDX NEXPERIA PSMN2R0-25MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R0-60PSRQ NEXPERIA PSMN2R0-60PSR.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1135A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R2-40YSDX NEXPERIA PSMN2R2-40YSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 789A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R7-30BL,118 NEXPERIA PSMN2R7-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R8-25MLC,115 NEXPERIA PSMN2R8-25MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-25YLDX NEXPERIA PSMN2R0-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R0-30YL,115 NEXPERIA PSMN2R0-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-30YLDX NEXPERIA PSMN2R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R0-40YLDX NEXPERIA PSMN2R0-40YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R2-25YLC,115 PSMN2R2-25YLC,115 NEXPERIA PSMN2R2-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R2-40BS,118 NEXPERIA PHGLS24325-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 962A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 962A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.76mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R5-30YL,115 NEXPERIA PSMN2R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R5-40YLDX NEXPERIA PSMN2R5-40YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 682A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R6-30YLC,115 NEXPERIA PSMN2R6-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R6-60PSQ PSMN2R6-60PSQ NEXPERIA PSMN2R6-60PS.pdf PHGL-S-A0001060194-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 961A
Power dissipation: 326W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R9-25YLC,115 NEXPERIA PSMN2R9-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 517A
Power dissipation: 92W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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PMBTA56,215 PMBTA56,215 NEXPERIA PMBTA56.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed collector current: 1A
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PMBTA56-QR PMBTA56-QR NEXPERIA PMBTA56-Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
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PUMB20,115 PUMB20,115 NEXPERIA PEMB20_PUMB20.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
50+8.41 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PUMB30,115 PUMB30,115 NEXPERIA PEMB30_PUMB30.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
на замовлення 160 шт:
термін постачання 14-30 дні (днів)
100+4.53 грн
120+3.53 грн
160+2.52 грн
Мінімальне замовлення: 100
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74LVC2T45GN,115 NEXPERIA 74LVC_LVCH2T45.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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74LVC2T45GS-Q100X NEXPERIA 74LVC_LVCH2T45_Q100.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
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74LVC2T45GS,115 NEXPERIA 74LVC_LVCH2T45.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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74LVC2T45GT-Q100X NEXPERIA 74LVC_LVCH2T45_Q100.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
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74LVC2T45GT,115 NEXPERIA 74LVC_LVCH2T45.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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74LVC74AD,118 74LVC74AD,118 NEXPERIA 74LVC74AD,118.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; LVC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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74LVC74ABQ,115 NEXPERIA 74LVC74ABQ,115.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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74LVC74APW,118 74LVC74APW,118 NEXPERIA 74LVC74APW,118.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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74AHCT14D.112 74AHCT14D.112 NEXPERIA 74AHCT14D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; AHCT; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Kind of package: tube
Technology: CMOS; TTL
Manufacturer series: AHCT
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74AHCT14D,118 74AHCT14D,118 NEXPERIA 74AHCT14D,118.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: AHCT
Kind of package: reel; tape
Technology: CMOS; TTL
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BSS63,215 BSS63,215 NEXPERIA BSS63.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Frequency: 85MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 100V
Kind of package: 7 inch reel; tape
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BSS63-QR NEXPERIA BSS63-Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Frequency: 85MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 100V
Kind of package: 7 inch reel; tape
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BAS16W.115 BAS16W.115 NEXPERIA BAS16_SER.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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BAS16W-QX BAS16W-QX NEXPERIA BAS16W-Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V; 0.2W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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BAS16WF BAS16WF NEXPERIA BAS16_SER.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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PCA9555PWJ NEXPERIA PCA9555.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD
Type of integrated circuit: interface
Kind of integrated circuit: 16bit; I/O expander
Supply voltage: 2.3...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
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74HC1G86GW,125 74HC1G86GW,125 NEXPERIA 74HC1G86G-DTE.PDF Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
на замовлення 3002 шт:
термін постачання 14-30 дні (днів)
56+8.15 грн
81+5.22 грн
96+4.41 грн
108+3.89 грн
250+3.59 грн
500+3.42 грн
1000+3.08 грн
3000+3.05 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
PBSS4350T-QVL PBSS4350T-QVL NEXPERIA PBSS4350T-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
Application: automotive industry
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PBSS4350TVL PBSS4350TVL NEXPERIA PBSS4350T.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
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BC807DSF BC807DS.pdf
BC807DSF
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.5A; 600mW; SC74,SOT457,TSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.6W
Case: SC74; SOT457; TSOP6
Pulsed collector current: 1A
Current gain: 40...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
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74HC21D,653 74HC21D,653.pdf
74HC21D,653
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 40µA
Number of inputs: 4
Kind of gate: AND
на замовлення 1872 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.36 грн
25+17.24 грн
28+15.06 грн
50+13.71 грн
100+12.53 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
74HC21DB,112 74HC21.pdf
74HC21DB,112
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SSOP14; tube; HC
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SSOP14
Family: HC
Kind of package: tube
Number of inputs: 4
Kind of gate: AND
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
17+27.18 грн
19+22.80 грн
25+21.11 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BAS20,215 BAS19_20_21.pdf
BAS20,215
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Reverse recovery time: 50ns
на замовлення 4971 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.34 грн
120+3.53 грн
143+2.96 грн
187+2.25 грн
500+1.67 грн
1000+1.56 грн
3000+1.37 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAS20,235 BAS20.235.pdf
BAS20,235
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Reverse recovery time: 50ns
на замовлення 8617 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.25 грн
91+4.63 грн
159+2.66 грн
205+2.06 грн
250+1.84 грн
500+1.55 грн
1000+1.40 грн
2500+1.29 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
74AHCT1G14GW,125 74AHC1G14G-DTE.PDF
74AHCT1G14GW,125
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AHCT
на замовлення 681 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.25 грн
77+5.47 грн
92+4.58 грн
102+4.13 грн
250+3.82 грн
500+3.65 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
PZU14B2,115 PZUXB_SER.pdf
PZU14B2,115
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 14V; SMD; reel,tape; SOD323F; Ifmax: 200mA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.55W
Max. forward voltage: 1.1V
Tolerance: ±2%
Zener voltage: 14V
на замовлення 407 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+19.93 грн
34+12.62 грн
100+6.06 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
74HCT541PW,118 74HCT541PW,118.pdf
74HCT541PW,118
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Quiescent current: 160µA
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74VHCT541BQ,115 74VHC_VHCT541.pdf
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
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74VHCT541D,118 74VHC_VHCT541.pdf
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
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74VHCT541PW,118 74VHC_VHCT541.pdf
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
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PSMN2R1-40PLQ PSMN2R1-40PL.pdf
PSMN2R1-40PLQ
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1075A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 168.9nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R8-40PS,127 PSMN2R8-40PS.pdf
PSMN2R8-40PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 797A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R6-40YS,115 PSMN2R6-40YS.pdf
PSMN2R6-40YS,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 131W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R2-40PS,127 PSMN2R2-40PS.pdf
PSMN2R2-40PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R0-60PS,127 PSMN2R0-60PS.pdf
PSMN2R0-60PS,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R5-60PLQ PSMN2R5-60PL.pdf
PSMN2R5-60PLQ
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 1002A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R8-40YSDX PSMN2R8-40YSD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Pulsed drain current: 658A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R4-30MLDX PSMN2R4-30MLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: NextPowerS3
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PSMN2R0-100SSFJ PSMN2R0-100SSF.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R8-80BS,118 PSMN2R8-80BS.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-25MLDX PSMN2R0-25MLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R0-60PSRQ PSMN2R0-60PSR.pdf
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1135A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R2-40YSDX PSMN2R2-40YSD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 789A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R7-30BL,118 PSMN2R7-30BL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R8-25MLC,115 PSMN2R8-25MLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-25YLDX PSMN2R0-25YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R0-30YL,115 PSMN2R0-30YL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-30YLDX PSMN2R0-30YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R0-40YLDX PSMN2R0-40YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R2-25YLC,115 PSMN2R2-25YLC.pdf
PSMN2R2-25YLC,115
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R2-40BS,118 PHGLS24325-1.pdf?t.download=true&u=5oefqw
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 962A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 962A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.76mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R5-30YL,115 PSMN2R5-30YL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R5-40YLDX PSMN2R5-40YLD.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 682A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R6-30YLC,115 PSMN2R6-30YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R6-60PSQ PSMN2R6-60PS.pdf PHGL-S-A0001060194-1.pdf?t.download=true&u=5oefqw
PSMN2R6-60PSQ
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 961A
Power dissipation: 326W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R9-25YLC,115 PSMN2R9-25YLC.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 517A
Power dissipation: 92W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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PMBTA56,215 PMBTA56.pdf
PMBTA56,215
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed collector current: 1A
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PMBTA56-QR PMBTA56-Q.pdf
PMBTA56-QR
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
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PUMB20,115 PEMB20_PUMB20.pdf
PUMB20,115
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+8.41 грн
Мінімальне замовлення: 50
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PUMB30,115 PEMB30_PUMB30.pdf
PUMB30,115
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
на замовлення 160 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
100+4.53 грн
120+3.53 грн
160+2.52 грн
Мінімальне замовлення: 100
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74LVC2T45GN,115 74LVC_LVCH2T45.pdf
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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74LVC2T45GS-Q100X 74LVC_LVCH2T45_Q100.pdf
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
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74LVC2T45GS,115 74LVC_LVCH2T45.pdf
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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74LVC2T45GT-Q100X 74LVC_LVCH2T45_Q100.pdf
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
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74LVC2T45GT,115 74LVC_LVCH2T45.pdf
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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74LVC74AD,118 74LVC74AD,118.pdf
74LVC74AD,118
Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; LVC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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74LVC74ABQ,115 74LVC74ABQ,115.pdf
Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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74LVC74APW,118 74LVC74APW,118.pdf
74LVC74APW,118
Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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74AHCT14D.112 74AHCT14D.pdf
74AHCT14D.112
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; AHCT; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Kind of package: tube
Technology: CMOS; TTL
Manufacturer series: AHCT
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74AHCT14D,118 74AHCT14D,118.pdf
74AHCT14D,118
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: AHCT
Kind of package: reel; tape
Technology: CMOS; TTL
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BSS63,215 BSS63.pdf
BSS63,215
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Frequency: 85MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 100V
Kind of package: 7 inch reel; tape
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BSS63-QR BSS63-Q.pdf
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Mounting: SMD
Frequency: 85MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 100V
Kind of package: 7 inch reel; tape
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BAS16W.115 BAS16_SER.pdf
BAS16W.115
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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BAS16W-QX BAS16W-Q.pdf
BAS16W-QX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V; 0.2W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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BAS16WF BAS16_SER.pdf
BAS16WF
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 175mA; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 175mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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PCA9555PWJ PCA9555.pdf
Виробник: NEXPERIA
Category: Interfaces others - integrated circuits
Description: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD
Type of integrated circuit: interface
Kind of integrated circuit: 16bit; I/O expander
Supply voltage: 2.3...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
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74HC1G86GW,125 74HC1G86G-DTE.PDF
74HC1G86GW,125
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; Mini Logic; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
на замовлення 3002 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
56+8.15 грн
81+5.22 грн
96+4.41 грн
108+3.89 грн
250+3.59 грн
500+3.42 грн
1000+3.08 грн
3000+3.05 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
PBSS4350T-QVL PBSS4350T-Q.pdf
PBSS4350T-QVL
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
Application: automotive industry
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PBSS4350TVL PBSS4350T.pdf
PBSS4350TVL
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
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