Продукція > NXP USA INC. > Всі товари виробника NXP USA INC. (35312) > Сторінка 339 з 589
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PDTA143XQA147 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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NPIC6C596D-Q100118 | NXP USA Inc. |
Description: SERIAL IN SERIAL OUT, 8-BITPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PDTA114ET/DG/B2215 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PMBD914/DG215 | NXP USA Inc. |
Description: PMBD914 - RECTIFIER DIODEPackaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOT23-3 (TO-236) Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PMBT2907A/MIG215 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Grade: Automotive Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 250 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PDTC114EU/DG/B3115 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
| PMBT4401/S911215 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
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PDTA114EM/L315 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PMBTA06/DG/B3235 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT23-3 (TO-236) Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PDTD143EQA147 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 940 mW Frequency - Transition: 210 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 29000 шт: термін постачання 21-31 дні (днів) |
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PDTD143ET235 | NXP USA Inc. | Description: SMALL SIGNAL BIPOLAR TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PMBTA06/6235 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT23-3 (TO-236) Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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NTS0101GN132 | NXP USA Inc. |
Description: IC TRNSLTR BIDIRECTIONAL 6XSONPackaging: Bulk Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PMBTA44/HV215 | NXP USA Inc. |
Description: TRANS NPN 400V 0.3A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Frequency - Transition: 20MHz Supplier Device Package: SOT-23 (TO-236AB) Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
| PDTD123YQA147 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | |||
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PDTC114ET/YA215 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PDTD123EU115 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q101 |
на замовлення 24860 шт: термін постачання 21-31 дні (днів) |
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PDTD114EU135 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PDTC114ET/DG/B2215 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
| PMDPB760EN115 | NXP USA Inc. | Description: SMALL SIGNAL FET |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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| PDTC124XE/DG/B2115 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk |
на замовлення 5294990 шт: термін постачання 21-31 дні (днів) |
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| PDTD113EQA147 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
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PDTD143EU115 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 103346 шт: термін постачання 21-31 дні (днів) |
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PMBTA06/6215 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT23-3 (TO-236) Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PMBT3906/DG215 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT23-3 (TO-236) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
на замовлення 249000 шт: термін постачання 21-31 дні (днів) |
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PMDXB550UNE/S500147 | NXP USA Inc. |
Description: SMALL SIGNAL N-CHANNEL MOSFET |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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PDTA114EE/DG115 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active |
на замовлення 1615000 шт: термін постачання 21-31 дні (днів) |
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| PDTD113EU135 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
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PMN27XPE115 | NXP USA Inc. |
Description: SMALL SIGNAL FETPackaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V Power Dissipation (Max): 530mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
| PDTD123YU135 | NXP USA Inc. | Description: SMALL SIGNAL BIPOLAR TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | |||
| PBSS4160PANS115 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | |||
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74AHCT00PW/C1118 | NXP USA Inc. |
Description: NAND GATE, AHCT/VHCT/VT SERIESPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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NTS0101GS132 | NXP USA Inc. |
Description: IC TRNSLTR BIDIRECTIONAL 6XSONPackaging: Bulk Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTC114EQA147 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 280 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 48387 шт: термін постачання 21-31 дні (днів) |
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74AHCT1G08GW132 | NXP USA Inc. |
Description: AND GATE, HCT SERIES |
товару немає в наявності |
В кошику од. на суму грн. | ||
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UBA2071T/N1118 | NXP USA Inc. |
Description: IC DRIVER HALF BRIDGE 24SOICPackaging: Bulk Part Status: Active Package / Case: 24-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Supplier Device Package: 24-SO Frequency: 10kHz ~ 100kHz Type: CCFL Controller Operating Temperature: -25°C ~ 100°C Voltage - Supply: 14V Dimming: Yes Current - Supply: 1.5 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PDTD143XU115 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 123080 шт: термін постачання 21-31 дні (днів) |
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74AHCT1G125GW/C2125 | NXP USA Inc. |
Description: BUS DRIVER, AHCT/VHCT/VT SERIESPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PMZ390UNE/S500315 | NXP USA Inc. |
Description: SMALL SIGNAL N-CHANNEL MOSFETPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PDTD114EU115 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 28286 шт: термін постачання 21-31 дні (днів) |
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74AHCT1G08GW/C125 | NXP USA Inc. |
Description: AND GATE, HCT SERIES |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PDTD123EU135 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PMZ370UNE315 | NXP USA Inc. |
Description: SMALL SIGNAL N-CHANNEL MOSFETPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PRTR5V0U4D/S911125 | NXP USA Inc. |
Description: TVS DIODE 5.5VWM 6TSOPPackaging: Bulk Part Status: Active Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TA) Applications: DVI, HDMI, USB Capacitance @ Frequency: 1pF @ 1MHz Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Power Line Protection: Yes |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PRTR5V0U2AX/DG/B2215 | NXP USA Inc. |
Description: TRANS VOLTAGE SUPPRESSOR DIODEPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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ON5257215 | NXP USA Inc. |
Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
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PMPB40SNA115 | NXP USA Inc. |
Description: POWER FIELD-EFFECT TRANSISTORPackaging: Bulk Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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PDTA143ZQA147 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active |
на замовлення 44200 шт: термін постачання 21-31 дні (днів) |
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| TDA8274AHN/C1557 | NXP USA Inc. |
Description: IC TUNER CABLE SILICON 40HVQFN Packaging: Bulk Part Status: Active |
на замовлення 3264 шт: термін постачання 21-31 дні (днів) |
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PDTA143ZE/DG/B3115 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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PDTA114EQA147 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: DFN1010D-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 280 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18900 шт: термін постачання 21-31 дні (днів) |
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PDTA123JQA147 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 280 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 125000 шт: термін постачання 21-31 дні (днів) |
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| TDA8271AHN/C1557 | NXP USA Inc. |
Description: IC TUNER DGTL CBL STB 40HVQFN Packaging: Bulk Part Status: Active |
на замовлення 2130 шт: термін постачання 21-31 дні (днів) |
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PDTA144EQA147 | NXP USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 280 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 19990 шт: термін постачання 21-31 дні (днів) |
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TEF6638HW/V103557 | NXP USA Inc. |
Description: IC DGTL CHIP AUTO RADIO 100HTQFPPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||
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TEF6614T/V1512 | NXP USA Inc. |
Description: IC TUNER CAR RADIO AM/FM 32SO Packaging: Bulk Part Status: Active |
на замовлення 958 шт: термін постачання 21-31 дні (днів) |
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PMBT2222AYS115 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V Frequency - Transition: 300MHz Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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74LV393PW/S400118 | NXP USA Inc. |
Description: BINARY COUNTERPackaging: Bulk Part Status: Active |
на замовлення 2450 шт: термін постачання 21-31 дні (днів) |
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TEA1752LT/N1/S1518 | NXP USA Inc. |
Description: IC OFFLINE SWITCH FLYBACKPackaging: Bulk Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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74HC4094DB-Q100118 | NXP USA Inc. |
Description: SERIAL IN PARALLEL OUTPackaging: Bulk Package / Case: 16-SSOP (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel, Serial Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-SSOP Part Status: Active Number of Bits per Element: 8 |
товару немає в наявності |
В кошику од. на суму грн. |
| PDTA143XQA147 |
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на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9489+ | 2.35 грн |
| PDTA114ET/DG/B2215 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PMBD914/DG215 |
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Виробник: NXP USA Inc.
Description: PMBD914 - RECTIFIER DIODE
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT23-3 (TO-236)
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Description: PMBD914 - RECTIFIER DIODE
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT23-3 (TO-236)
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PMBT2907A/MIG215 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PMBT4401/S911215 |
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PDTA114EM/L315 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PMBTA06/DG/B3235 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT23-3 (TO-236)
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT23-3 (TO-236)
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| PDTD143EQA147 |
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Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 940 mW
Frequency - Transition: 210 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 940 mW
Frequency - Transition: 210 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 29000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8219+ | 3.13 грн |
| PDTD143ET235 |
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| PMBTA06/6235 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT23-3 (TO-236)
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT23-3 (TO-236)
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| NTS0101GN132 |
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на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1443+ | 17.35 грн |
| PMBTA44/HV215 |
Виробник: NXP USA Inc.
Description: TRANS NPN 400V 0.3A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 250 mW
Description: TRANS NPN 400V 0.3A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| PDTD123YQA147 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| PDTC114ET/YA215 |
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Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PDTD123EU115 |
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Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
на замовлення 24860 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8036+ | 3.13 грн |
| PDTD114EU135 |
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Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
| PDTC114ET/DG/B2215 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PMDPB760EN115 |
Виробник: NXP USA Inc.
Description: SMALL SIGNAL FET
Description: SMALL SIGNAL FET
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2061+ | 11.78 грн |
| PDTC124XE/DG/B2115 |
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на замовлення 5294990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6662+ | 3.77 грн |
| PDTD113EQA147 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PDTD143EU115 |
![]() |
Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 103346 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8036+ | 3.13 грн |
| PMBTA06/6215 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT23-3 (TO-236)
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT23-3 (TO-236)
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| PMBT3906/DG215 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 249000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15000+ | 1.51 грн |
| PMDXB550UNE/S500147 |
![]() |
Виробник: NXP USA Inc.
Description: SMALL SIGNAL N-CHANNEL MOSFET
Description: SMALL SIGNAL N-CHANNEL MOSFET
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3842+ | 6.04 грн |
| PDTA114EE/DG115 |
![]() |
на замовлення 1615000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15000+ | 1.51 грн |
| PDTD113EU135 |
![]() |
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PMN27XPE115 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL FET
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 530mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
Description: SMALL SIGNAL FET
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 530mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| PDTD123YU135 |
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| PBSS4160PANS115 |
![]() |
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| NTS0101GS132 |
![]() |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1312+ | 19.00 грн |
| PDTC114EQA147 |
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Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 48387 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9489+ | 2.27 грн |
| 74AHCT1G08GW132 |
![]() |
Виробник: NXP USA Inc.
Description: AND GATE, HCT SERIES
Description: AND GATE, HCT SERIES
товару немає в наявності
В кошику
од. на суму грн.
| UBA2071T/N1118 |
![]() |
Виробник: NXP USA Inc.
Description: IC DRIVER HALF BRIDGE 24SOIC
Packaging: Bulk
Part Status: Active
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 24-SO
Frequency: 10kHz ~ 100kHz
Type: CCFL Controller
Operating Temperature: -25°C ~ 100°C
Voltage - Supply: 14V
Dimming: Yes
Current - Supply: 1.5 mA
Description: IC DRIVER HALF BRIDGE 24SOIC
Packaging: Bulk
Part Status: Active
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 24-SO
Frequency: 10kHz ~ 100kHz
Type: CCFL Controller
Operating Temperature: -25°C ~ 100°C
Voltage - Supply: 14V
Dimming: Yes
Current - Supply: 1.5 mA
товару немає в наявності
В кошику
од. на суму грн.
| PDTD143XU115 |
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Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 123080 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8036+ | 3.13 грн |
| 74AHCT1G125GW/C2125 |
![]() |
Виробник: NXP USA Inc.
Description: BUS DRIVER, AHCT/VHCT/VT SERIES
Packaging: Bulk
Part Status: Active
Description: BUS DRIVER, AHCT/VHCT/VT SERIES
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PDTD114EU115 |
![]() |
Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 28286 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8036+ | 3.02 грн |
| 74AHCT1G08GW/C125 |
![]() |
Виробник: NXP USA Inc.
Description: AND GATE, HCT SERIES
Description: AND GATE, HCT SERIES
товару немає в наявності
В кошику
од. на суму грн.
| PDTD123EU135 |
![]() |
Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 225 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PRTR5V0U4D/S911125 |
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Виробник: NXP USA Inc.
Description: TVS DIODE 5.5VWM 6TSOP
Packaging: Bulk
Part Status: Active
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TA)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Description: TVS DIODE 5.5VWM 6TSOP
Packaging: Bulk
Part Status: Active
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TA)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
товару немає в наявності
В кошику
од. на суму грн.
| ON5257215 |
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1664+ | 13.60 грн |
| PMPB40SNA115 |
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Виробник: NXP USA Inc.
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 24.10 грн |
| PDTA143ZQA147 |
![]() |
на замовлення 44200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9489+ | 2.35 грн |
| TDA8274AHN/C1557 |
на замовлення 3264 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 128+ | 194.13 грн |
| PDTA143ZE/DG/B3115 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PDTA114EQA147 |
![]() |
Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9489+ | 2.35 грн |
| PDTA123JQA147 |
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Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 125000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9489+ | 2.35 грн |
| TDA8271AHN/C1557 |
на замовлення 2130 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 115+ | 215.61 грн |
| PDTA144EQA147 |
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Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 19990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9489+ | 2.27 грн |
| TEF6638HW/V103557 |
![]() |
Виробник: NXP USA Inc.
Description: IC DGTL CHIP AUTO RADIO 100HTQFP
Packaging: Bulk
Part Status: Active
Description: IC DGTL CHIP AUTO RADIO 100HTQFP
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| TEF6614T/V1512 |
на замовлення 958 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 52+ | 439.83 грн |
| PMBT2222AYS115 |
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Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| 74LV393PW/S400118 |
![]() |
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1069+ | 21.64 грн |
| TEA1752LT/N1/S1518 |
![]() |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 296+ | 76.26 грн |
| 74HC4094DB-Q100118 |
![]() |
Виробник: NXP USA Inc.
Description: SERIAL IN PARALLEL OUT
Packaging: Bulk
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SSOP
Part Status: Active
Number of Bits per Element: 8
Description: SERIAL IN PARALLEL OUT
Packaging: Bulk
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SSOP
Part Status: Active
Number of Bits per Element: 8
товару немає в наявності
В кошику
од. на суму грн.































