| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FSEZ1317NY | onsemi |
Description: IC PWM CTLR PRIMARY REG 7-DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Frequency - Switching: 47kHz ~ 53kHz Voltage - Breakdown: 700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 5V ~ 23V Supplier Device Package: 7-DIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KA5L0565RYDTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220FPackaging: Tube Package / Case: TO-220-4 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Duty Cycle: 77% Frequency - Switching: 50kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 30V Supplier Device Package: TO-220F-4L (Forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V |
товару немає в наявності |
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DTA123JET1 | onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBF4119 | onsemi |
Description: JFET N-CH 40V SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Power - Max: 225 mW Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBF4119 | onsemi |
Description: JFET N-CH 40V SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Power - Max: 225 mW Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KSC2073H2TSTU | onsemi |
Description: TRANS NPN 150V 1.5A TO-220-3Packaging: Tube Package / Case: TO-220-3 Cropped Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 25 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NB3N2304NZDTR2G | onsemi |
Description: IC CLK BUFFER 1:4 140MHZ 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS, LVTTL Type: Fanout Buffer (Distribution) Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP Frequency - Max: 140 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PCFG50T60RNW | onsemi |
Description: MOSFET Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FCPF20N60T | onsemi |
Description: MOSFET N-CH 600V 20A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GF1B | onsemi |
Description: DIODE STANDARD 100V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 13800 шт: термін постачання 21-31 дні (днів) |
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GF1B | onsemi |
Description: DIODE STANDARD 100V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 14112 шт: термін постачання 21-31 дні (днів) |
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NCV5702DR2G | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 9.2ns, 7.9ns Channel Type: Synchronous Driven Configuration: High-Side or Low-Side Number of Drivers: 1 Gate Type: IGBT Logic Voltage - VIL, VIH: 0.75V, 4.3V Current - Peak Output (Source, Sink): 7.8A, 6.8A DigiKey Programmable: Not Verified |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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NCV5702DR2G | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 9.2ns, 7.9ns Channel Type: Synchronous Driven Configuration: High-Side or Low-Side Number of Drivers: 1 Gate Type: IGBT Logic Voltage - VIL, VIH: 0.75V, 4.3V Current - Peak Output (Source, Sink): 7.8A, 6.8A DigiKey Programmable: Not Verified |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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| FDMF5808A | onsemi |
Description: IC HALF BRIDGE DRIVER QFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDMC7200 | onsemi |
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMC7200 | onsemi |
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ESDL3141MXT5G | onsemi |
Description: ASYMMETRIC LOW CAP SURGE PROTECTPackaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 1.4pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A, 16.5A Voltage - Reverse Standoff (Typ): 14V (Max), 5V (Max) Supplier Device Package: 2-X2DFN (1x0.6) Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.1V, 5.5V Voltage - Clamping (Max) @ Ipp: 21.5V, 14V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV8535MN250R2G | onsemi |
Description: IC REG LINEAR 2.5V 500MA 10DFNPackaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 190 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Grade: Automotive Voltage Dropout (Max): 0.34V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 14 mA Qualification: AEC-Q100 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NCV8535MN250R2G | onsemi |
Description: IC REG LINEAR 2.5V 500MA 10DFNPackaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 190 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Grade: Automotive Voltage Dropout (Max): 0.34V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 14 mA Qualification: AEC-Q100 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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| MAX4372FEUK | onsemi |
Description: MAX43LOW-COSUCSMICROPOWEHIGH-SIC Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NCV2561SQT1G | onsemi |
Description: IC VIDEO AMP 1CH SC-88-6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Function: Driver Voltage - Supply: 3.3V ~ 2.7V Applications: Consumer Video Standards: NTSC, PAL Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Control Interface: Analog Voltage Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV2561SQT1G | onsemi |
Description: IC VIDEO AMP 1CH SC-88-6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Function: Driver Voltage - Supply: 3.3V ~ 2.7V Applications: Consumer Video Standards: NTSC, PAL Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Control Interface: Analog Voltage Qualification: AEC-Q100 |
на замовлення 2699 шт: термін постачання 21-31 дні (днів) |
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| LMC6482AIM/NAK2 | onsemi |
Description: LMC6482ACMAMP Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LC87F0808AUQFPTLM-H | onsemi |
Description: IC MCU 8BIT 8KB FLASH 36QFPPackaging: Tape & Reel (TR) Package / Case: 36-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Data Converters: A/D 10x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V Connectivity: SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 36-QFP (7x7) Number of I/O: 28 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLV74VHC00DTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
на замовлення 9700 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC00DTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
на замовлення 9818 шт: термін постачання 21-31 дні (днів) |
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NTMTS002N08MC | onsemi |
Description: PTNG 80V IN CEBU PQFN88Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Power Dissipation (Max): 3.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 540µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NTMTS002N08MC | onsemi |
Description: PTNG 80V IN CEBU PQFN88Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Power Dissipation (Max): 3.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 540µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V |
на замовлення 23900 шт: термін постачання 21-31 дні (днів) |
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NTBLS002N08MC | onsemi |
Description: MOSFET N-CH 80V 28A/238A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NTBLS002N08MC | onsemi |
Description: MOSFET N-CH 80V 28A/238A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVMYS1D6N04CLTWG | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMYS1D6N04CLTWG | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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NVMYS1D6N04CLT1G | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NVMYS1D6N04CLT1G | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 17875 шт: термін постачання 21-31 дні (днів) |
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NVMYS4D6N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 21A/78A LFPAK4Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Qualification: AEC-Q101 |
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NVMYS4D6N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 21A/78A LFPAK4Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2939 шт: термін постачання 21-31 дні (днів) |
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NTMYS4D6N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 21A/78A LFPAK4Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
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NTMYS4D6N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 21A/78A LFPAK4Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
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| SNSR05F40NXT5G | onsemi |
Description: 0402 FC SCHOTTKY DIODES Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NSR05201MX4T5G | onsemi |
Description: 01005_TRENCH_SCHOTTKY_20VPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NSR05201MX4T5G | onsemi |
Description: 01005_TRENCH_SCHOTTKY_20VPackaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KA7815AETU | onsemi |
Description: IC REG LINEAR 15V 1A TO220-3Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 15V PSRR: 58dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
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NCV68061SNAIT1G | onsemi |
Description: IDEAL DIODE NMOS DRIVERPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: N+1 ORing Controller Operating Temperature: -40°C ~ 150°C Voltage - Supply: 3V ~ 32V Applications: General Purpose Internal Switch(s): No FET Type: N-Channel Delay Time - OFF: 200 ns Ratio - Input:Output: 1:1 Supplier Device Package: 6-TSOP Grade: Automotive Current - Supply: 215 µA Qualification: AEC-Q100 |
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В кошику од. на суму грн. | ||||||||||||||
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NCV68061SNAIT1G | onsemi |
Description: IDEAL DIODE NMOS DRIVERPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: N+1 ORing Controller Operating Temperature: -40°C ~ 150°C Voltage - Supply: 3V ~ 32V Applications: General Purpose Internal Switch(s): No FET Type: N-Channel Delay Time - OFF: 200 ns Ratio - Input:Output: 1:1 Supplier Device Package: 6-TSOP Grade: Automotive Current - Supply: 215 µA Qualification: AEC-Q100 |
на замовлення 2438 шт: термін постачання 21-31 дні (днів) |
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NL27WZ125USG-F22190 | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US8 |
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В кошику од. на суму грн. | ||||||||||||||
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NL27WZ125USG-F22190 | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US8 |
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В кошику од. на суму грн. | ||||||||||||||
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NLV27WZ125USG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US8 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLV27WZ125USG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V US8Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US8 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1043 шт: термін постачання 21-31 дні (днів) |
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NC7SZ11P6X-L22347 | onsemi |
Description: IC GATE AND 1CH 3-INP SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: SC-70-6 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NC7SZ11P6X-L22347 | onsemi |
Description: IC GATE AND 1CH 3-INP SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: SC-70-6 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 14104 шт: термін постачання 21-31 дні (днів) |
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| MAX4544EUT-T10 | onsemi |
Description: MAX45LVOLTAGSINGSUPPDUSPANALSWIT Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NRVBS360BNT3G | onsemi |
Description: DIODE SCHOTTKY 60V 4A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Current - Reverse Leakage @ Vr: 30 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVBS360BNT3G | onsemi |
Description: DIODE SCHOTTKY 60V 4A SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Current - Reverse Leakage @ Vr: 30 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 864 шт: термін постачання 21-31 дні (днів) |
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NVMFWD016N06CT1G | onsemi |
Description: MOSFET 2N-CH 60V 9A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 36W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16380 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC50DTR2G | onsemi |
Description: IC BUF NON-INVERT 5.5V 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 14-TSSOP Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC50DTR2G | onsemi |
Description: IC BUF NON-INVERT 5.5V 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 14-TSSOP Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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P6SMB6.8AT3 | onsemi |
Description: TVS ZENER UNIDIR 600W 6.8V SMBPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DFB20100 | onsemi |
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6PPackaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 583 шт: термін постачання 21-31 дні (днів) |
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| NV24C32MUW3VTBG | onsemi |
Description: IC EEPROM 32KBIT I2C 8UDFN Packaging: Bulk Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 900 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
на замовлення 38405 шт: термін постачання 21-31 дні (днів) |
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FJP2145TU | onsemi |
Description: TRANS NPN 800V 5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 120 W |
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| FSEZ1317NY |
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Виробник: onsemi
Description: IC PWM CTLR PRIMARY REG 7-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Frequency - Switching: 47kHz ~ 53kHz
Voltage - Breakdown: 700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 5V ~ 23V
Supplier Device Package: 7-DIP
Description: IC PWM CTLR PRIMARY REG 7-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Frequency - Switching: 47kHz ~ 53kHz
Voltage - Breakdown: 700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 5V ~ 23V
Supplier Device Package: 7-DIP
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| KA5L0565RYDTU |
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Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
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| DTA123JET1 |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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| MMBF4119 |
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Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
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| MMBF4119 |
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Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
Description: JFET N-CH 40V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
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| KSC2073H2TSTU |
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Виробник: onsemi
Description: TRANS NPN 150V 1.5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3 Cropped Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 25 W
Description: TRANS NPN 150V 1.5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3 Cropped Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 25 W
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| NB3N2304NZDTR2G |
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Виробник: onsemi
Description: IC CLK BUFFER 1:4 140MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 140 MHz
Description: IC CLK BUFFER 1:4 140MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 140 MHz
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| FCPF20N60T |
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Виробник: onsemi
Description: MOSFET N-CH 600V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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| GF1B |
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Виробник: onsemi
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 13800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7500+ | 7.71 грн |
| GF1B |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 14112 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.07 грн |
| 17+ | 19.81 грн |
| 100+ | 15.70 грн |
| 500+ | 11.11 грн |
| 1000+ | 9.29 грн |
| 2000+ | 8.96 грн |
| NCV5702DR2G |
![]() |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 9.2ns, 7.9ns
Channel Type: Synchronous
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.75V, 4.3V
Current - Peak Output (Source, Sink): 7.8A, 6.8A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 9.2ns, 7.9ns
Channel Type: Synchronous
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.75V, 4.3V
Current - Peak Output (Source, Sink): 7.8A, 6.8A
DigiKey Programmable: Not Verified
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 113.29 грн |
| 5000+ | 105.68 грн |
| NCV5702DR2G |
![]() |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 9.2ns, 7.9ns
Channel Type: Synchronous
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.75V, 4.3V
Current - Peak Output (Source, Sink): 7.8A, 6.8A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 9.2ns, 7.9ns
Channel Type: Synchronous
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.75V, 4.3V
Current - Peak Output (Source, Sink): 7.8A, 6.8A
DigiKey Programmable: Not Verified
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 234.30 грн |
| 10+ | 202.82 грн |
| 25+ | 191.75 грн |
| 100+ | 147.97 грн |
| 250+ | 132.77 грн |
| 500+ | 127.98 грн |
| 1000+ | 104.64 грн |
| FDMC7200 |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 19.35 грн |
| FDMC7200 |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.59 грн |
| 10+ | 42.62 грн |
| 100+ | 29.29 грн |
| 500+ | 22.98 грн |
| 1000+ | 20.85 грн |
| ESDL3141MXT5G |
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Виробник: onsemi
Description: ASYMMETRIC LOW CAP SURGE PROTECT
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A, 16.5A
Voltage - Reverse Standoff (Typ): 14V (Max), 5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V, 5.5V
Voltage - Clamping (Max) @ Ipp: 21.5V, 14V
Power Line Protection: No
Description: ASYMMETRIC LOW CAP SURGE PROTECT
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A, 16.5A
Voltage - Reverse Standoff (Typ): 14V (Max), 5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V, 5.5V
Voltage - Clamping (Max) @ Ipp: 21.5V, 14V
Power Line Protection: No
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| NCV8535MN250R2G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.5V 500MA 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 190 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 2.5V 500MA 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 190 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Qualification: AEC-Q100
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 55.49 грн |
| 6000+ | 51.36 грн |
| NCV8535MN250R2G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.5V 500MA 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 190 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 2.5V 500MA 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 190 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Qualification: AEC-Q100
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 185.59 грн |
| 10+ | 112.33 грн |
| 25+ | 95.68 грн |
| 100+ | 72.62 грн |
| 250+ | 64.38 грн |
| 500+ | 59.39 грн |
| 1000+ | 54.36 грн |
| NCV2561SQT1G |
![]() |
Виробник: onsemi
Description: IC VIDEO AMP 1CH SC-88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 2.7V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Control Interface: Analog Voltage
Qualification: AEC-Q100
Description: IC VIDEO AMP 1CH SC-88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 2.7V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Control Interface: Analog Voltage
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| NCV2561SQT1G |
![]() |
Виробник: onsemi
Description: IC VIDEO AMP 1CH SC-88-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 2.7V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Control Interface: Analog Voltage
Qualification: AEC-Q100
Description: IC VIDEO AMP 1CH SC-88-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 2.7V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Control Interface: Analog Voltage
Qualification: AEC-Q100
на замовлення 2699 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.59 грн |
| 10+ | 46.74 грн |
| 25+ | 43.86 грн |
| 100+ | 31.20 грн |
| 250+ | 26.56 грн |
| 500+ | 25.23 грн |
| 1000+ | 18.94 грн |
| LC87F0808AUQFPTLM-H |
![]() |
Виробник: onsemi
Description: IC MCU 8BIT 8KB FLASH 36QFP
Packaging: Tape & Reel (TR)
Package / Case: 36-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Data Converters: A/D 10x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Connectivity: SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 36-QFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 36QFP
Packaging: Tape & Reel (TR)
Package / Case: 36-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Data Converters: A/D 10x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Connectivity: SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 36-QFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| NLV74VHC00DTR2G |
![]() |
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 9700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 17.36 грн |
| 5000+ | 15.51 грн |
| 7500+ | 14.90 грн |
| NLV74VHC00DTR2G |
![]() |
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 9818 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.90 грн |
| 10+ | 41.89 грн |
| 25+ | 34.58 грн |
| 100+ | 24.97 грн |
| 250+ | 21.39 грн |
| 500+ | 19.22 грн |
| 1000+ | 17.15 грн |
| NTMTS002N08MC |
![]() |
Виробник: onsemi
Description: PTNG 80V IN CEBU PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 540µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
Description: PTNG 80V IN CEBU PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 540µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 225.16 грн |
| NTMTS002N08MC |
![]() |
Виробник: onsemi
Description: PTNG 80V IN CEBU PQFN88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 540µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
Description: PTNG 80V IN CEBU PQFN88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 540µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
на замовлення 23900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 505.55 грн |
| 10+ | 328.73 грн |
| 100+ | 245.02 грн |
| NTBLS002N08MC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 320.62 грн |
| NTBLS002N08MC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 553.41 грн |
| 10+ | 411.86 грн |
| 25+ | 381.66 грн |
| 100+ | 327.01 грн |
| 250+ | 312.14 грн |
| 500+ | 303.18 грн |
| 1000+ | 290.96 грн |
| NVMYS1D6N04CLTWG |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVMYS1D6N04CLTWG |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 193.99 грн |
| 10+ | 120.09 грн |
| 100+ | 82.14 грн |
| NVMYS1D6N04CLT1G |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 57.49 грн |
| NVMYS1D6N04CLT1G |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
на замовлення 17875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 195.67 грн |
| 10+ | 120.90 грн |
| 100+ | 82.69 грн |
| 500+ | 62.26 грн |
| 1000+ | 57.33 грн |
| NVMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2939 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.29 грн |
| 10+ | 64.61 грн |
| 100+ | 45.21 грн |
| 500+ | 35.49 грн |
| 1000+ | 32.40 грн |
| NTMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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| NTMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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| KA7815AETU |
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Виробник: onsemi
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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| NCV68061SNAIT1G |
![]() |
Виробник: onsemi
Description: IDEAL DIODE NMOS DRIVER
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Grade: Automotive
Current - Supply: 215 µA
Qualification: AEC-Q100
Description: IDEAL DIODE NMOS DRIVER
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Grade: Automotive
Current - Supply: 215 µA
Qualification: AEC-Q100
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| NCV68061SNAIT1G |
![]() |
Виробник: onsemi
Description: IDEAL DIODE NMOS DRIVER
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Grade: Automotive
Current - Supply: 215 µA
Qualification: AEC-Q100
Description: IDEAL DIODE NMOS DRIVER
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Grade: Automotive
Current - Supply: 215 µA
Qualification: AEC-Q100
на замовлення 2438 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.62 грн |
| 10+ | 40.92 грн |
| 25+ | 36.81 грн |
| 100+ | 30.30 грн |
| 250+ | 28.29 грн |
| 500+ | 27.08 грн |
| 1000+ | 25.65 грн |
| NL27WZ125USG-F22190 |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
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| NL27WZ125USG-F22190 |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
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| NLV27WZ125USG |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Grade: Automotive
Qualification: AEC-Q100
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| NLV27WZ125USG |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1043 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.70 грн |
| 10+ | 59.11 грн |
| 25+ | 55.54 грн |
| 100+ | 39.51 грн |
| 250+ | 33.63 грн |
| 500+ | 31.95 грн |
| 1000+ | 23.98 грн |
| NC7SZ11P6X-L22347 |
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Виробник: onsemi
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.45 грн |
| 6000+ | 6.78 грн |
| NC7SZ11P6X-L22347 |
![]() |
Виробник: onsemi
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 14104 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.59 грн |
| 14+ | 24.34 грн |
| 25+ | 21.93 грн |
| 100+ | 11.22 грн |
| 250+ | 10.85 грн |
| 500+ | 9.72 грн |
| 1000+ | 7.36 грн |
| NRVBS360BNT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 4A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 4A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Qualification: AEC-Q101
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| NRVBS360BNT3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 4A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 4A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Qualification: AEC-Q101
на замовлення 864 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 81.46 грн |
| 10+ | 63.80 грн |
| 100+ | 49.63 грн |
| 500+ | 39.48 грн |
| NVMFWD016N06CT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.94 грн |
| 10+ | 144.35 грн |
| 100+ | 100.11 грн |
| 500+ | 79.57 грн |
| NLV74VHC50DTR2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 15.45 грн |
| NLV74VHC50DTR2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.19 грн |
| 10+ | 38.49 грн |
| 25+ | 35.91 грн |
| 100+ | 25.02 грн |
| 250+ | 21.18 грн |
| 500+ | 20.21 грн |
| 1000+ | 14.68 грн |
| DFB20100 |
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Виробник: onsemi
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 583 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 267.89 грн |
| 15+ | 157.48 грн |
| 105+ | 117.17 грн |
| 510+ | 90.19 грн |
| NV24C32MUW3VTBG |
Виробник: onsemi
Description: IC EEPROM 32KBIT I2C 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT I2C 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 38405 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 550+ | 46.19 грн |
| FJP2145TU |
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Виробник: onsemi
Description: TRANS NPN 800V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 120 W
Description: TRANS NPN 800V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 120 W
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од. на суму грн.


























