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LA77000V-A-MPB-E onsemi Description: RF MODULATOR IC
Packaging: Bulk
на замовлення 1271 шт:
термін постачання 21-31 дні (днів)
365+60.96 грн
Мінімальне замовлення: 365 шт
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LV23015T-B-TLM-E onsemi Description: 1-CHIP TUNER IC INCORPORATING PL
Packaging: Bulk
на замовлення 222000 шт:
термін постачання 21-31 дні (днів)
234+91.47 грн
Мінімальне замовлення: 234 шт
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BC337 BC337 onsemi ONSM-S-A0003590550-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN GP 800MA 45V TO92
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 210MHz
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BC337A BC337A onsemi BC337,338.pdf Description: TRANS NPN 45V 0.8A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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FAN1951D25X FAN1951D25X onsemi FAN1950%2C51%20Rev2004.pdf Description: IC REG LINEAR 2.5V 1.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 2.5V
Voltage Dropout (Max): 0.5V @ 1.5A
Protection Features: Over Current, Over Temperature
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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FAN1582D25X FAN1582D25X onsemi FAN1582%20Rev2003.pdf Description: IC REG LINEAR 2.5V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 2.5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.18V @ 3A
Protection Features: Over Current, Over Temperature
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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MMSD4148 MMSD4148 onsemi MMSD4148%2CSMMSD4148.pdf Description: DIODE STANDARD 100V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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NLVHCT08ADTR2G NLVHCT08ADTR2G onsemi MC74HC08A-D.PDF Description: IC AND 4-CIR 2-IN 14-TSSOP
Packaging: Tape & Reel (TR)
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Current - Quiescent (Max): 1 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 17ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
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DM74LS245N DM74LS245N onsemi DM74LS245.pdf Description: IC TXRX 4.75V/5.25V 20-PDIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Number of Bits per Element: 8
Current - Output High, Low: 15mA, 24mA
Supplier Device Package: 20-PDIP
товару немає в наявності
 Мінімальне замовлення: 18 шт
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BZX85C9V1 BZX85C9V1 onsemi BZX85C3V3-D.PDF Description: DIODE ZENER 9.1V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.5 V
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MMBFJ310 MMBFJ310 onsemi MMBFJ309-310.pdf Description: RF MOSFET JFET 10V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 60mA
Mounting Type: Surface Mount
Frequency: 450MHz
Configuration: N-Channel
Gain: 12dB
Technology: JFET
Noise Figure: 3dB
Supplier Device Package: SOT-23-3
Voltage - Rated: 25 V
Voltage - Test: 10 V
Current - Test: 10 mA
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CAT24C16LI-G CAT24C16LI-G onsemi CAT24C0x%2CC16.pdf Description: IC EEPROM 16KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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CAT24C16VP2I-GT3 CAT24C16VP2I-GT3 onsemi CAT24C0x,C16.pdf Description: IC EEPROM 16KBIT I2C 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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CAT24C16YI-G CAT24C16YI-G onsemi cat24c01-d.pdf Description: IC EEPROM 16KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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CAT24C164WI-GT3 CAT24C164WI-GT3 onsemi cat24c164-d.pdf Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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CAT24C164WI-GT3 CAT24C164WI-GT3 onsemi cat24c164-d.pdf Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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NSV12100XV6T1G NSV12100XV6T1G onsemi nss12100xv6-d.pdf Description: TRANS PNP 12V 1A SOT563
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+13.23 грн
Мінімальне замовлення: 4000 шт
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NSV12100XV6T1G NSV12100XV6T1G onsemi nss12100xv6-d.pdf Description: TRANS PNP 12V 1A SOT563
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
6+58.00 грн
10+34.80 грн
100+22.43 грн
500+16.06 грн
1000+14.45 грн
2000+13.09 грн
Мінімальне замовлення: 6 шт
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NSV12100UW3TCG NSV12100UW3TCG onsemi nss12100uw3-d.pdf Description: TRANS PNP 12V 1A 3WDFN
Power - Max: 740 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
3000+23.66 грн
6000+21.09 грн
9000+20.23 грн
15000+18.36 грн
Мінімальне замовлення: 3000 шт
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NSV12100UW3TCG NSV12100UW3TCG onsemi nss12100uw3-d.pdf Description: TRANS PNP 12V 1A 3WDFN
Power - Max: 740 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 86998 шт:
термін постачання 21-31 дні (днів)
4+92.49 грн
10+56.16 грн
100+37.03 грн
500+27.03 грн
1000+24.54 грн
Мінімальне замовлення: 4 шт
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MC74VHC373DWR2G MC74VHC373DWR2G onsemi mc74vhc373-d.pdf Description: IC D-TYPE TRANSP 8:8 20-SOIC
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Supplier Device Package: 20-SOIC
Delay Time - Propagation: 4.9ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
на замовлення 45503 шт:
термін постачання 21-31 дні (днів)
403+50.72 грн
Мінімальне замовлення: 403 шт
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MC74VHC373DWR2 MC74VHC373DWR2 onsemi mc74vhc373-d.pdf Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 20-SOIC
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NVHL040N65S3 NVHL040N65S3 onsemi nvhl040n65s3-d.pdf Description: SF3 650V EASY 40MOHM TO-247 AUTO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V
Qualification: AEC-Q101
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
1+851.22 грн
30+496.02 грн
60+457.53 грн
120+398.99 грн
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NVH040N65S3F NVH040N65S3F onsemi nvh040n65s3f-d.pdf Description: SF3 FRFET AUTO 40MOHM TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 400 V
Qualification: AEC-Q101
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
1+1124.77 грн
30+671.78 грн
60+622.87 грн
120+567.99 грн
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NGTB40N65IHL2WG NGTB40N65IHL2WG onsemi ngtb40n65ihl2w-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 465 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/140ns
Switching Energy: 360µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 300 W
на замовлення 10625 шт:
термін постачання 21-31 дні (днів)
100+198.76 грн
Мінімальне замовлення: 100 шт
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CAV25M01VE-GT3 CAV25M01VE-GT3 onsemi cav25m01-d.pdf Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+63.66 грн
6000+59.76 грн
Мінімальне замовлення: 3000 шт
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CAV25M01VE-GT3 CAV25M01VE-GT3 onsemi cav25m01-d.pdf Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 7638 шт:
термін постачання 21-31 дні (днів)
4+79.95 грн
10+72.23 грн
25+70.23 грн
50+64.49 грн
100+63.03 грн
250+61.09 грн
500+58.66 грн
1000+57.24 грн
Мінімальне замовлення: 4 шт
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KA7815AE KA7815AE onsemi KA78xxE_KA78xxAE_Rev1.9_Apr2015.pdf Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
товару немає в наявності
 Мінімальне замовлення: 2400 шт
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NRVHPM260T3G NRVHPM260T3G onsemi nhpm260-d.pdf Description: PUF 2A 600V IN POWERMITE
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
12000+11.75 грн
Мінімальне замовлення: 12000 шт
В кошику  од. на суму  грн.
NRVHPM120T3G NRVHPM120T3G onsemi nhpm120-d.pdf Description: DIODE GEN PURP 200V 1A POWERMITE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Cut Tape (CT)
на замовлення 9984 шт:
термін постачання 21-31 дні (днів)
9+36.06 грн
12+25.29 грн
100+20.73 грн
500+13.29 грн
1000+12.29 грн
2000+12.18 грн
5000+11.85 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
2V7002LT1G 2V7002LT1G onsemi 2N7002L-D.PDF Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+4.08 грн
6000+3.54 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2V7002LT1G 2V7002LT1G onsemi 2N7002L-D.PDF Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
15+21.16 грн
24+12.76 грн
50+9.13 грн
100+7.47 грн
500+5.51 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
LM358MX LM358MX onsemi LM2904%2CLM358%28A%29%2CLM258%28A%29.pdf description Description: IC OP AMP 2CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 800µA (x2 Channels)
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
товару немає в наявності
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CD4023BCN CD4023BCN onsemi CD4023BC.pdf Description: IC NAND 3-CIR 3-IN 14-MDIP
Supplier Device Package: 14-MDIP
Number of Inputs: 3
Current - Output High, Low: 3.4mA, 3.4mA
Voltage - Supply: 3V ~ 15V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Current - Quiescent (Max): 1 µA
Number of Circuits: 3
Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF
Input Logic Level - Low: 1.5V ~ 4V
Input Logic Level - High: 3.5V ~ 11V
товару немає в наявності
 Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
BAL99LT1 BAL99LT1 onsemi bal99lt1-d.pdf Description: DIODE STANDARD 70V 100MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
товару немає в наявності
В кошику  од. на суму  грн.
BAS16_L99Z BAS16_L99Z onsemi BAS16_Rev2015.pdf Description: DIODE GEN PURP 85V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
BAV70_L99Z BAV70_L99Z onsemi DS_488_BAV70.pdf Description: DIODE DUAL IN 70V 200MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-563
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 µA @ 70 V
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1N4148_L99Z 1N4148_L99Z onsemi 1n914-d.pdf Description: DIODE STANDARD 100V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
BAT54A_L99Z BAT54A_L99Z onsemi BAT54(A,C,S).pdf Description: DIODE SCHOTTKY 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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MURS110T3 MURS110T3 onsemi murs120t3-d.pdf Description: DIODE STANDARD 100V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
MURA110T3 MURA110T3 onsemi MURA105T3-D.pdf Description: DIODE STANDARD 100V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
FGH40N60UFTU FGH40N60UFTU onsemi fgh40n60uf-d.pdf Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
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FGH40N60SFDTU-F085 FGH40N60SFDTU-F085 onsemi FGH40N60SFDTU-F085-D.PDF Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/138ns
Switching Energy: 1.23mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 121 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Qualification: AEC-Q101
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MBRA160T3 MBRA160T3 onsemi mbra160t3-d.pdf Description: DIODE SCHOTTKY 60V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
TCA0372DWG TCA0372DWG onsemi tca0372-d.pdf Description: IC POWER 2 CIRCUIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Amplifier Type: Power
Operating Temperature: -40°C ~ 125°C
Current - Supply: 8mA
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 16-SOIC
Number of Circuits: 2
Current - Output / Channel: 1 A
Voltage - Supply Span (Min): 5 V
Voltage - Supply Span (Max): 40 V
товару немає в наявності
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2SA1778-3-TB-E 2SA1778-3-TB-E onsemi 2156_2SA1778.pdf Description: RF TRANS PNP 15V 1.2GHZ 3-CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Gain: 13dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 2.5dB @ 400MHz
Supplier Device Package: 3-CP
на замовлення 69274 шт:
термін постачання 21-31 дні (днів)
1137+17.54 грн
Мінімальне замовлення: 1137 шт
В кошику  од. на суму  грн.
NVTYS029N08HLTWG NVTYS029N08HLTWG onsemi nvtys029n08hl-d.pdf Description: T8 80V N-CH LL IN LFPAK33 PACKAG
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2828 шт:
термін постачання 21-31 дні (днів)
4+91.71 грн
10+55.48 грн
100+36.72 грн
500+26.92 грн
1000+24.49 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
NVTYS029N08HTWG NVTYS029N08HTWG onsemi nvtys029n08h-d.pdf Description: T8 80V N-CH SG IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)
4+94.06 грн
10+57.06 грн
100+37.80 грн
500+27.71 грн
1000+25.20 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
NVMYS029N08LHTWG NVMYS029N08LHTWG onsemi nvmys029n08lh-d.pdf Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
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NTLUS029N06T6TAG NTLUS029N06T6TAG onsemi NTLUS029N06T6-D.pdf Description: MOSFET N-CH 60V 3.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+20.11 грн
6000+18.35 грн
9000+16.99 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NTLUS029N06T6TAG NTLUS029N06T6TAG onsemi NTLUS029N06T6-D.pdf Description: MOSFET N-CH 60V 3.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 30 V
на замовлення 17970 шт:
термін постачання 21-31 дні (днів)
6+52.52 грн
10+44.15 грн
100+30.58 грн
500+23.98 грн
1000+20.41 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
FDS6699S FDS6699S onsemi FDS6699S-D.PDF Description: MOSFET N-CH 30V 21A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 15 V
товару немає в наявності
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FDS6699S FDS6699S onsemi ONSM-S-A0003585240-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 21A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 15 V
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FDMS3610S FDMS3610S onsemi fdms3610s-d.pdf Description: MOSFET 2N-CH 25V 17.5/30A PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power56
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74AC05SCX 74AC05SCX onsemi 74AC05.pdf Description: IC INV 6-CIR 1-IN 14-SOIC
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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FGH60N60SFDTU-F085 FGH60N60SFDTU-F085 onsemi fgh60n60sf_f085-d.pdf Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/134ns
Switching Energy: 1.97mJ (on), 570µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Grade: Automotive
Qualification: AEC-Q101
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FGL40N120ANDTU FGL40N120ANDTU onsemi fgl40n120and-d.pdf Description: IGBT NPT 1200V 64A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-264-3
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/110ns
Switching Energy: 2.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
товару немає в наявності
 Мінімальне замовлення: 375 шт
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FGL40N120ANTU FGL40N120ANTU onsemi FGL40N120AN.pdf Description: IGBT NPT 1200V 64A TO-264-3
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-264-3
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/110ns
Switching Energy: 2.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
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NLVSX5014MUTAG onsemi Description: 4-BIT 100 MB/S DUAL-SUPPLY LEVEL
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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NLVSX5014MUTAG onsemi Description: 4-BIT 100 MB/S DUAL-SUPPLY LEVEL
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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LA77000V-A-MPB-E
Виробник: onsemi
Description: RF MODULATOR IC
Packaging: Bulk
на замовлення 1271 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
365+60.96 грн
Мінімальне замовлення: 365 шт
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LV23015T-B-TLM-E
Виробник: onsemi
Description: 1-CHIP TUNER IC INCORPORATING PL
Packaging: Bulk
на замовлення 222000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
234+91.47 грн
Мінімальне замовлення: 234 шт
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BC337 ONSM-S-A0003590550-1.pdf?t.download=true&u=5oefqw
BC337
Виробник: onsemi
Description: TRANS NPN GP 800MA 45V TO92
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 210MHz
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BC337A BC337,338.pdf
BC337A
Виробник: onsemi
Description: TRANS NPN 45V 0.8A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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FAN1951D25X FAN1950%2C51%20Rev2004.pdf
FAN1951D25X
Виробник: onsemi
Description: IC REG LINEAR 2.5V 1.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 2.5V
Voltage Dropout (Max): 0.5V @ 1.5A
Protection Features: Over Current, Over Temperature
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Мінімальне замовлення: 2500 шт
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FAN1582D25X FAN1582%20Rev2003.pdf
FAN1582D25X
Виробник: onsemi
Description: IC REG LINEAR 2.5V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 2.5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.18V @ 3A
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 2500 шт
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MMSD4148 MMSD4148%2CSMMSD4148.pdf
MMSD4148
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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NLVHCT08ADTR2G MC74HC08A-D.PDF
NLVHCT08ADTR2G
Виробник: onsemi
Description: IC AND 4-CIR 2-IN 14-TSSOP
Packaging: Tape & Reel (TR)
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Current - Quiescent (Max): 1 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 17ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
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DM74LS245N DM74LS245.pdf
DM74LS245N
Виробник: onsemi
Description: IC TXRX 4.75V/5.25V 20-PDIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Number of Bits per Element: 8
Current - Output High, Low: 15mA, 24mA
Supplier Device Package: 20-PDIP
товару немає в наявності
Мінімальне замовлення: 18 шт
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BZX85C9V1 BZX85C3V3-D.PDF
BZX85C9V1
Виробник: onsemi
Description: DIODE ZENER 9.1V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.5 V
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MMBFJ310 MMBFJ309-310.pdf
MMBFJ310
Виробник: onsemi
Description: RF MOSFET JFET 10V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 60mA
Mounting Type: Surface Mount
Frequency: 450MHz
Configuration: N-Channel
Gain: 12dB
Technology: JFET
Noise Figure: 3dB
Supplier Device Package: SOT-23-3
Voltage - Rated: 25 V
Voltage - Test: 10 V
Current - Test: 10 mA
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CAT24C16LI-G CAT24C0x%2CC16.pdf
CAT24C16LI-G
Виробник: onsemi
Description: IC EEPROM 16KBIT I2C 400KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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CAT24C16VP2I-GT3 CAT24C0x,C16.pdf
CAT24C16VP2I-GT3
Виробник: onsemi
Description: IC EEPROM 16KBIT I2C 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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CAT24C16YI-G cat24c01-d.pdf
CAT24C16YI-G
Виробник: onsemi
Description: IC EEPROM 16KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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CAT24C164WI-GT3 cat24c164-d.pdf
CAT24C164WI-GT3
Виробник: onsemi
Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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CAT24C164WI-GT3 cat24c164-d.pdf
CAT24C164WI-GT3
Виробник: onsemi
Description: IC EEPROM 16KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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NSV12100XV6T1G nss12100xv6-d.pdf
NSV12100XV6T1G
Виробник: onsemi
Description: TRANS PNP 12V 1A SOT563
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4000+13.23 грн
Мінімальне замовлення: 4000 шт
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NSV12100XV6T1G nss12100xv6-d.pdf
NSV12100XV6T1G
Виробник: onsemi
Description: TRANS PNP 12V 1A SOT563
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+58.00 грн
10+34.80 грн
100+22.43 грн
500+16.06 грн
1000+14.45 грн
2000+13.09 грн
Мінімальне замовлення: 6 шт
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NSV12100UW3TCG nss12100uw3-d.pdf
NSV12100UW3TCG
Виробник: onsemi
Description: TRANS PNP 12V 1A 3WDFN
Power - Max: 740 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+23.66 грн
6000+21.09 грн
9000+20.23 грн
15000+18.36 грн
Мінімальне замовлення: 3000 шт
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NSV12100UW3TCG nss12100uw3-d.pdf
NSV12100UW3TCG
Виробник: onsemi
Description: TRANS PNP 12V 1A 3WDFN
Power - Max: 740 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 86998 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+92.49 грн
10+56.16 грн
100+37.03 грн
500+27.03 грн
1000+24.54 грн
Мінімальне замовлення: 4 шт
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MC74VHC373DWR2G mc74vhc373-d.pdf
MC74VHC373DWR2G
Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Supplier Device Package: 20-SOIC
Delay Time - Propagation: 4.9ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
на замовлення 45503 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
403+50.72 грн
Мінімальне замовлення: 403 шт
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MC74VHC373DWR2 mc74vhc373-d.pdf
MC74VHC373DWR2
Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 20-SOIC
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NVHL040N65S3 nvhl040n65s3-d.pdf
NVHL040N65S3
Виробник: onsemi
Description: SF3 650V EASY 40MOHM TO-247 AUTO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V
Qualification: AEC-Q101
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+851.22 грн
30+496.02 грн
60+457.53 грн
120+398.99 грн
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NVH040N65S3F nvh040n65s3f-d.pdf
NVH040N65S3F
Виробник: onsemi
Description: SF3 FRFET AUTO 40MOHM TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 400 V
Qualification: AEC-Q101
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1124.77 грн
30+671.78 грн
60+622.87 грн
120+567.99 грн
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NGTB40N65IHL2WG ngtb40n65ihl2w-d.pdf
NGTB40N65IHL2WG
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 465 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/140ns
Switching Energy: 360µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 300 W
на замовлення 10625 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
100+198.76 грн
Мінімальне замовлення: 100 шт
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CAV25M01VE-GT3 cav25m01-d.pdf
CAV25M01VE-GT3
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+63.66 грн
6000+59.76 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
CAV25M01VE-GT3 cav25m01-d.pdf
CAV25M01VE-GT3
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 7638 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+79.95 грн
10+72.23 грн
25+70.23 грн
50+64.49 грн
100+63.03 грн
250+61.09 грн
500+58.66 грн
1000+57.24 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
KA7815AE KA78xxE_KA78xxAE_Rev1.9_Apr2015.pdf
KA7815AE
Виробник: onsemi
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
товару немає в наявності
Мінімальне замовлення: 2400 шт
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NRVHPM260T3G nhpm260-d.pdf
NRVHPM260T3G
Виробник: onsemi
Description: PUF 2A 600V IN POWERMITE
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
12000+11.75 грн
Мінімальне замовлення: 12000 шт
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NRVHPM120T3G nhpm120-d.pdf
NRVHPM120T3G
Виробник: onsemi
Description: DIODE GEN PURP 200V 1A POWERMITE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Cut Tape (CT)
на замовлення 9984 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
9+36.06 грн
12+25.29 грн
100+20.73 грн
500+13.29 грн
1000+12.29 грн
2000+12.18 грн
5000+11.85 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
2V7002LT1G 2N7002L-D.PDF
2V7002LT1G
Виробник: onsemi
Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+4.08 грн
6000+3.54 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2V7002LT1G 2N7002L-D.PDF
2V7002LT1G
Виробник: onsemi
Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
15+21.16 грн
24+12.76 грн
50+9.13 грн
100+7.47 грн
500+5.51 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
LM358MX description LM2904%2CLM358%28A%29%2CLM258%28A%29.pdf
LM358MX
Виробник: onsemi
Description: IC OP AMP 2CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 800µA (x2 Channels)
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
товару немає в наявності
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CD4023BCN CD4023BC.pdf
CD4023BCN
Виробник: onsemi
Description: IC NAND 3-CIR 3-IN 14-MDIP
Supplier Device Package: 14-MDIP
Number of Inputs: 3
Current - Output High, Low: 3.4mA, 3.4mA
Voltage - Supply: 3V ~ 15V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Current - Quiescent (Max): 1 µA
Number of Circuits: 3
Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF
Input Logic Level - Low: 1.5V ~ 4V
Input Logic Level - High: 3.5V ~ 11V
товару немає в наявності
Мінімальне замовлення: 25 шт
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BAL99LT1 bal99lt1-d.pdf
BAL99LT1
Виробник: onsemi
Description: DIODE STANDARD 70V 100MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
товару немає в наявності
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BAS16_L99Z BAS16_Rev2015.pdf
BAS16_L99Z
Виробник: onsemi
Description: DIODE GEN PURP 85V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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BAV70_L99Z DS_488_BAV70.pdf
BAV70_L99Z
Виробник: onsemi
Description: DIODE DUAL IN 70V 200MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-563
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 µA @ 70 V
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1N4148_L99Z 1n914-d.pdf
1N4148_L99Z
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
BAT54A_L99Z BAT54(A,C,S).pdf
BAT54A_L99Z
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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MURS110T3 murs120t3-d.pdf
MURS110T3
Виробник: onsemi
Description: DIODE STANDARD 100V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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MURA110T3 MURA105T3-D.pdf
MURA110T3
Виробник: onsemi
Description: DIODE STANDARD 100V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
FGH40N60UFTU fgh40n60uf-d.pdf
FGH40N60UFTU
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
товару немає в наявності
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FGH40N60SFDTU-F085 FGH40N60SFDTU-F085-D.PDF
FGH40N60SFDTU-F085
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/138ns
Switching Energy: 1.23mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 121 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Qualification: AEC-Q101
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MBRA160T3 mbra160t3-d.pdf
MBRA160T3
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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TCA0372DWG tca0372-d.pdf
TCA0372DWG
Виробник: onsemi
Description: IC POWER 2 CIRCUIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Amplifier Type: Power
Operating Temperature: -40°C ~ 125°C
Current - Supply: 8mA
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 16-SOIC
Number of Circuits: 2
Current - Output / Channel: 1 A
Voltage - Supply Span (Min): 5 V
Voltage - Supply Span (Max): 40 V
товару немає в наявності
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2SA1778-3-TB-E 2156_2SA1778.pdf
2SA1778-3-TB-E
Виробник: onsemi
Description: RF TRANS PNP 15V 1.2GHZ 3-CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Gain: 13dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 2.5dB @ 400MHz
Supplier Device Package: 3-CP
на замовлення 69274 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1137+17.54 грн
Мінімальне замовлення: 1137 шт
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NVTYS029N08HLTWG nvtys029n08hl-d.pdf
NVTYS029N08HLTWG
Виробник: onsemi
Description: T8 80V N-CH LL IN LFPAK33 PACKAG
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2828 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+91.71 грн
10+55.48 грн
100+36.72 грн
500+26.92 грн
1000+24.49 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
NVTYS029N08HTWG nvtys029n08h-d.pdf
NVTYS029N08HTWG
Виробник: onsemi
Description: T8 80V N-CH SG IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+94.06 грн
10+57.06 грн
100+37.80 грн
500+27.71 грн
1000+25.20 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
NVMYS029N08LHTWG nvmys029n08lh-d.pdf
NVMYS029N08LHTWG
Виробник: onsemi
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
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NTLUS029N06T6TAG NTLUS029N06T6-D.pdf
NTLUS029N06T6TAG
Виробник: onsemi
Description: MOSFET N-CH 60V 3.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+20.11 грн
6000+18.35 грн
9000+16.99 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NTLUS029N06T6TAG NTLUS029N06T6-D.pdf
NTLUS029N06T6TAG
Виробник: onsemi
Description: MOSFET N-CH 60V 3.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 30 V
на замовлення 17970 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+52.52 грн
10+44.15 грн
100+30.58 грн
500+23.98 грн
1000+20.41 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
FDS6699S FDS6699S-D.PDF
FDS6699S
Виробник: onsemi
Description: MOSFET N-CH 30V 21A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 15 V
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FDS6699S ONSM-S-A0003585240-1.pdf?t.download=true&u=5oefqw
FDS6699S
Виробник: onsemi
Description: MOSFET N-CH 30V 21A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 15 V
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FDMS3610S fdms3610s-d.pdf
FDMS3610S
Виробник: onsemi
Description: MOSFET 2N-CH 25V 17.5/30A PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power56
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74AC05SCX 74AC05.pdf
74AC05SCX
Виробник: onsemi
Description: IC INV 6-CIR 1-IN 14-SOIC
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
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FGH60N60SFDTU-F085 fgh60n60sf_f085-d.pdf
FGH60N60SFDTU-F085
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/134ns
Switching Energy: 1.97mJ (on), 570µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Grade: Automotive
Qualification: AEC-Q101
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FGL40N120ANDTU fgl40n120and-d.pdf
FGL40N120ANDTU
Виробник: onsemi
Description: IGBT NPT 1200V 64A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-264-3
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/110ns
Switching Energy: 2.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
товару немає в наявності
Мінімальне замовлення: 375 шт
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FGL40N120ANTU FGL40N120AN.pdf
FGL40N120ANTU
Виробник: onsemi
Description: IGBT NPT 1200V 64A TO-264-3
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-264-3
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/110ns
Switching Energy: 2.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
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NLVSX5014MUTAG
Виробник: onsemi
Description: 4-BIT 100 MB/S DUAL-SUPPLY LEVEL
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NLVSX5014MUTAG
Виробник: onsemi
Description: 4-BIT 100 MB/S DUAL-SUPPLY LEVEL
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
товару немає в наявності
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