| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NVMFS5C406NT1G | onsemi |
Description: MOSFET N-CH 40V 52A/353A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFS5C406NT1G | onsemi |
Description: MOSFET N-CH 40V 52A/353A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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| NVMFS5C468NT1G | onsemi |
Description: MOSFET N-CH 40V 12A/35A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFS5C468NT1G | onsemi |
Description: MOSFET N-CH 40V 12A/35A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
на замовлення 554 шт: термін постачання 21-31 дні (днів) |
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FQPF18N50V2 | onsemi |
Description: MOSFET N-CH 500V 18A TO220FPackaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD237STU | onsemi |
Description: TRANS NPN 80V 2A TO-126-3Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD441STU | onsemi |
Description: TRANS NPN 80V 4A TO-126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 36 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FJP13007H1TU | onsemi |
Description: TRANS NPN 400V 8A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FJP3307DH2TU | onsemi |
Description: TRANS NPN 400V 8A TO220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FJP3307DTU | onsemi |
Description: TRANS NPN 400V 8A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV8161AMX250TBG | onsemi |
Description: IC REG LINEAR 2.5V 450MA 4XDFNPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 450mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 23 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Grade: Automotive PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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NCV8161AMX250TBG | onsemi |
Description: IC REG LINEAR 2.5V 450MA 4XDFNPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 450mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 23 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Grade: Automotive PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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2N3704 | onsemi |
Description: TRANS NPN 30V 0.5A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDS6375 | onsemi |
Description: MOSFET P-CH 20V 8A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDS6375 | onsemi |
Description: MOSFET P-CH 20V 8A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V |
на замовлення 16667 шт: термін постачання 21-31 дні (днів) |
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NC7S14P5 | onsemi |
Description: IC INVERT SCHMITT 1CH 1IN SC70-5Features: Schmitt Trigger Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 1 Supplier Device Package: SC-70-5 Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFD5C470NLT1G | onsemi |
Description: MOSFET 2N-CH 40V 11A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C470NLT1G | onsemi |
Description: MOSFET 2N-CH 40V 11A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8800 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C470NLWFT1G | onsemi |
Description: MOSFET 2N-CH 40V 11A/36A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFD5C470NLWFT1G | onsemi |
Description: MOSFET 2N-CH 40V 11A/36A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FGAF40N60UFTU | onsemi |
Description: IGBT 600V 40A TO-3PFPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-3PF Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 470µJ (on), 130µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 77 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 100 W |
на замовлення 197 шт: термін постачання 21-31 дні (днів) |
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FDD6296 | onsemi |
Description: MOSFET N-CH 30V 15A/50A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V |
на замовлення 24388 шт: термін постачання 21-31 дні (днів) |
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MURF1620CT | onsemi |
Description: DIODE ARRAY GP 200V 8A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NV24C08DTVLT3G | onsemi |
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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NV24C08DTVLT3G | onsemi |
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 56907 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC32DTR2G | onsemi |
Description: IC GATE OR 4CH 2-INP 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.9V ~ 4.4V Input Logic Level - Low: 0.1V ~ 0.36V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC32DTR2G | onsemi |
Description: IC GATE OR 4CH 2-INP 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.9V ~ 4.4V Input Logic Level - Low: 0.1V ~ 0.36V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| FDZ1827NZ-P | onsemi |
Description: FDZ18COMMONDRAN-CPOWERTRENMOSFET Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ECH8657-TL-H | onsemi |
Description: MOSFET 2N-CH 35V 4.5A 8ECHPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH |
на замовлення 1798 шт: термін постачання 21-31 дні (днів) |
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ECH8402-TL-E | onsemi |
Description: MOSFET N-CH 30V 10A 8ECHPackaging: Bulk Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V |
на замовлення 1035562 шт: термін постачання 21-31 дні (днів) |
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| ECH8601R-TL-EX | onsemi |
Description: NCH+NCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 98333 шт: термін постачання 21-31 дні (днів) |
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ECH8305-TL-E | onsemi |
Description: MOSFET P-CH 60V 4A 8ECH Packaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 10V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V |
на замовлення 63650 шт: термін постачання 21-31 дні (днів) |
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ECH8301-TL-E | onsemi |
Description: P CHANNEL SILICON MOS FET Packaging: Bulk |
на замовлення 92692 шт: термін постачання 21-31 дні (днів) |
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ECH8315-TL-H | onsemi |
Description: MOSFET P-CH 30V 7.5A 8ECHPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ECH8315-TL-H | onsemi |
Description: MOSFET P-CH 30V 7.5A 8ECHPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V |
на замовлення 4665 шт: термін постачання 21-31 дні (днів) |
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| ECH8606-TL-H | onsemi |
Description: NCH+NCH 4V DRIVE SERIES Packaging: Bulk |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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| ECH8311-TL-H | onsemi |
Description: PCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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| ECH8602R-TL-H | onsemi |
Description: NCH+NCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 126000 шт: термін постачання 21-31 дні (днів) |
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ECH8604-TL-E | onsemi |
Description: N-CHANNEL MOSFET Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| ECH8201-TL-H | onsemi |
Description: TRANSISTORPackaging: Bulk |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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FJP13007H2TU-F080 | onsemi |
Description: TRANS NPN 400V 8A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AR0233ATSC17XUEA1-DPBR1 | onsemi |
Description: 2MP 1/3 CIS SOPackaging: Tray Package / Case: 80-LBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 2048H x 1280V Supplier Device Package: 80-IBGA (10x10) Frames per Second: 60 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AR0138AT3R00XUEA1-DPBM | onsemi |
Description: DIODE Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDS6679Z | onsemi |
Description: MOSFET P-CH 30V 13A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3803 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SB02W03C-TB-E | onsemi |
Description: DIODE SCHOTTKY BARRIERPackaging: Bulk |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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| FFAF30UA60S | onsemi |
Description: 30 A, 600 V, UITRAFAST II SINGLEPackaging: Bulk Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-3PF-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
на замовлення 10290 шт: термін постачання 21-31 дні (днів) |
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| NCV57540DWKR2G | onsemi |
Description: ISOLATED DUAL-CHANNEL IGBT GATEPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 6.5A Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 12ns, 10ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 20ns Number of Channels: 2 Voltage - Output Supply: 32V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| NCV57540DWKR2G | onsemi |
Description: ISOLATED DUAL-CHANNEL IGBT GATEPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 6.5A Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 12ns, 10ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 20ns Number of Channels: 2 Voltage - Output Supply: 32V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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74LCX157M | onsemi |
Description: IC MULTIPLEXER 4 X 2:1 16SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOIC |
на замовлення 1349 шт: термін постачання 21-31 дні (днів) |
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FOD2742BV | onsemi |
Description: OPTOISO 2.5KV 1CH TRANS 8-SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -25°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 70V Number of Channels: 1 |
на замовлення 2999 шт: термін постачання 21-31 дні (днів) |
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FOD2741BS | onsemi |
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMDPackaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.5V (Max) Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 8-SMD Voltage - Output (Max): 30V Number of Channels: 1 |
на замовлення 1898 шт: термін постачання 21-31 дні (днів) |
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FOD2741AV | onsemi |
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.5V (Max) Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 8-DIP Voltage - Output (Max): 30V Number of Channels: 1 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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FOD2741ATV | onsemi |
Description: OPTOISOLTR 5KV 1CH TRANS 8-MDIPPackaging: Bulk Package / Case: 8-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.5V (Max) Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 8-MDIP Voltage - Output (Max): 30V Number of Channels: 1 |
на замовлення 1016 шт: термін постачання 21-31 дні (днів) |
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FOD2711ASD | onsemi |
Description: OPTOISOLATOR 5KV TRANSISTOR 8SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.5V (Max) Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 8-SMD Voltage - Output (Max): 30V Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FOD2711ASD | onsemi |
Description: OPTOISOLATOR 5KV TRANSISTOR 8SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.5V (Max) Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 8-SMD Voltage - Output (Max): 30V Number of Channels: 1 |
на замовлення 415 шт: термін постачання 21-31 дні (днів) |
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| LA77000V-TLM-E | onsemi |
Description: IC RF MODULATOR VHF 16SSOP Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MURA220T3 | onsemi |
Description: DIODE STANDARD 200V 2A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SMA Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PCFG40N65SMW | onsemi |
Description: IC Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MCH6626-TL-E | onsemi |
Description: MOSFET N/P-CH 20V 1.6A 6MCPH Packaging: Bulk Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A, 1A Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 800mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4V FET Feature: Logic Level Gate Supplier Device Package: 6-MCPH |
на замовлення 48750 шт: термін постачання 21-31 дні (днів) |
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MC14043BD | onsemi |
Description: IC LATCH R-S QUAD NOR 16SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 1:1 Logic Type: S-R Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 4 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 60ns Supplier Device Package: 16-SOIC |
товару немає в наявності |
В кошику од. на суму грн. |
| NVMFS5C406NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS5C406NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 375.56 грн |
| 10+ | 303.52 грн |
| 100+ | 245.56 грн |
| NVMFS5C468NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS5C468NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
на замовлення 554 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 105.09 грн |
| 10+ | 82.61 грн |
| 100+ | 64.26 грн |
| 500+ | 51.12 грн |
| FQPF18N50V2 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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| BD237STU |
![]() |
Виробник: onsemi
Description: TRANS NPN 80V 2A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: TRANS NPN 80V 2A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
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| BD441STU |
Виробник: onsemi
Description: TRANS NPN 80V 4A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 36 W
Description: TRANS NPN 80V 4A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 36 W
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| FJP13007H1TU |
![]() |
Виробник: onsemi
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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| FJP3307DH2TU |
![]() |
Виробник: onsemi
Description: TRANS NPN 400V 8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 400V 8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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| FJP3307DTU |
![]() |
Виробник: onsemi
Description: TRANS NPN 400V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 400V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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| NCV8161AMX250TBG |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.5V 450MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 2.5V 450MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 17.95 грн |
| 10000+ | 16.22 грн |
| 15000+ | 15.68 грн |
| NCV8161AMX250TBG |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.5V 450MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 2.5V 450MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 79.02 грн |
| 10+ | 45.19 грн |
| 25+ | 37.53 грн |
| 100+ | 27.34 грн |
| 250+ | 23.58 грн |
| 500+ | 21.30 грн |
| 1000+ | 19.10 грн |
| 2500+ | 17.14 грн |
| 2N3704 |
![]() |
Виробник: onsemi
Description: TRANS NPN 30V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN 30V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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| FDS6375 |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V
Description: MOSFET P-CH 20V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 28.09 грн |
| 5000+ | 25.53 грн |
| FDS6375 |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V
Description: MOSFET P-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V
на замовлення 16667 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.61 грн |
| 10+ | 58.21 грн |
| 100+ | 40.52 грн |
| 500+ | 30.53 грн |
| 1000+ | 28.07 грн |
| NC7S14P5 | ![]() |
![]() |
Виробник: onsemi
Description: IC INVERT SCHMITT 1CH 1IN SC70-5
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1IN SC70-5
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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| NVMFD5C470NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 49.09 грн |
| 3000+ | 46.38 грн |
| 4500+ | 45.48 грн |
| NVMFD5C470NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 120.57 грн |
| 10+ | 84.65 грн |
| 100+ | 65.28 грн |
| 500+ | 52.93 грн |
| NVMFD5C470NLWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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| NVMFD5C470NLWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FGAF40N60UFTU |
![]() |
Виробник: onsemi
Description: IGBT 600V 40A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
Description: IGBT 600V 40A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
на замовлення 197 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 313.64 грн |
| 30+ | 167.28 грн |
| 120+ | 137.64 грн |
| FDD6296 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 15A/50A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
Description: MOSFET N-CH 30V 15A/50A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
на замовлення 24388 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 644+ | 38.29 грн |
| MURF1620CT |
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Виробник: onsemi
Description: DIODE ARRAY GP 200V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE ARRAY GP 200V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| NV24C08DTVLT3G |
![]() |
Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 23.68 грн |
| 6000+ | 22.24 грн |
| 9000+ | 21.92 грн |
| 15000+ | 20.19 грн |
| 21000+ | 19.94 грн |
| 30000+ | 19.68 грн |
| NV24C08DTVLT3G |
![]() |
Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 56907 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.59 грн |
| 25+ | 25.95 грн |
| 50+ | 23.85 грн |
| 100+ | 23.34 грн |
| 250+ | 22.66 грн |
| 500+ | 21.78 грн |
| 1000+ | 21.27 грн |
| NLV74VHC32DTR2G |
Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 17.47 грн |
| NLV74VHC32DTR2G |
Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.76 грн |
| 10+ | 44.32 грн |
| 25+ | 36.78 грн |
| 100+ | 26.44 грн |
| 250+ | 22.48 грн |
| 500+ | 20.04 грн |
| 1000+ | 17.70 грн |
| ECH8657-TL-H |
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Виробник: onsemi
Description: MOSFET 2N-CH 35V 4.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Description: MOSFET 2N-CH 35V 4.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
на замовлення 1798 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.88 грн |
| 10+ | 43.07 грн |
| 100+ | 28.13 грн |
| 500+ | 20.36 грн |
| 1000+ | 18.42 грн |
| ECH8402-TL-E |
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Виробник: onsemi
Description: MOSFET N-CH 30V 10A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
Description: MOSFET N-CH 30V 10A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
на замовлення 1035562 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1480+ | 16.29 грн |
| ECH8601R-TL-EX |
на замовлення 98333 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1401+ | 17.11 грн |
| ECH8305-TL-E |
Виробник: onsemi
Description: MOSFET P-CH 60V 4A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Description: MOSFET P-CH 60V 4A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
на замовлення 63650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 993+ | 21.49 грн |
| ECH8301-TL-E |
на замовлення 92692 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 910+ | 23.64 грн |
| ECH8315-TL-H |
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Виробник: onsemi
Description: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
Description: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.06 грн |
| ECH8315-TL-H |
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Виробник: onsemi
Description: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
Description: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
на замовлення 4665 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.91 грн |
| 10+ | 50.52 грн |
| 100+ | 33.20 грн |
| 500+ | 24.16 грн |
| 1000+ | 21.90 грн |
| ECH8606-TL-H |
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 987+ | 24.44 грн |
| ECH8311-TL-H |
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 919+ | 26.88 грн |
| ECH8602R-TL-H |
на замовлення 126000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 919+ | 26.88 грн |
| ECH8604-TL-E |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 888+ | 27.70 грн |
| ECH8201-TL-H |
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на замовлення 66000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 579+ | 42.36 грн |
| FJP13007H2TU-F080 |
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Виробник: onsemi
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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| AR0233ATSC17XUEA1-DPBR1 |
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Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 2048H x 1280V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 2048H x 1280V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60
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| FDS6679Z |
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Виробник: onsemi
Description: MOSFET P-CH 30V 13A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3803 pF @ 15 V
Description: MOSFET P-CH 30V 13A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3803 pF @ 15 V
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| SB02W03C-TB-E |
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на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2959+ | 7.57 грн |
| FFAF30UA60S |
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Виробник: onsemi
Description: 30 A, 600 V, UITRAFAST II SINGLE
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3PF-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: 30 A, 600 V, UITRAFAST II SINGLE
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3PF-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 10290 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 254+ | 87.64 грн |
| NCV57540DWKR2G |
![]() |
Виробник: onsemi
Description: ISOLATED DUAL-CHANNEL IGBT GATE
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 32V
Description: ISOLATED DUAL-CHANNEL IGBT GATE
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 32V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 196.98 грн |
| 2000+ | 182.55 грн |
| NCV57540DWKR2G |
![]() |
Виробник: onsemi
Description: ISOLATED DUAL-CHANNEL IGBT GATE
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 32V
Description: ISOLATED DUAL-CHANNEL IGBT GATE
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 20ns
Number of Channels: 2
Voltage - Output Supply: 32V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 392.66 грн |
| 10+ | 339.45 грн |
| 25+ | 320.88 грн |
| 100+ | 247.61 грн |
| 250+ | 222.18 грн |
| 500+ | 214.15 грн |
| 74LCX157M |
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Виробник: onsemi
Description: IC MULTIPLEXER 4 X 2:1 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Description: IC MULTIPLEXER 4 X 2:1 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
на замовлення 1349 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.94 грн |
| 10+ | 102.38 грн |
| 25+ | 97.18 грн |
| 100+ | 70.02 грн |
| 250+ | 61.88 грн |
| 500+ | 58.62 грн |
| 1000+ | 44.85 грн |
| FOD2742BV |
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Виробник: onsemi
Description: OPTOISO 2.5KV 1CH TRANS 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Number of Channels: 1
Description: OPTOISO 2.5KV 1CH TRANS 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Number of Channels: 1
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 123.01 грн |
| 10+ | 75.15 грн |
| 100+ | 53.00 грн |
| 500+ | 41.55 грн |
| 1000+ | 39.03 грн |
| FOD2741BS |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Description: OPTOISOLATOR 5KV 1CH TRANS 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
на замовлення 1898 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.71 грн |
| 10+ | 93.75 грн |
| 100+ | 67.21 грн |
| 500+ | 53.29 грн |
| 1000+ | 50.28 грн |
| FOD2741AV |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Description: OPTOISOLATOR 5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.38 грн |
| 10+ | 98.84 грн |
| 100+ | 75.22 грн |
| 500+ | 60.81 грн |
| 1000+ | 57.62 грн |
| 2000+ | 54.91 грн |
| FOD2741ATV |
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Виробник: onsemi
Description: OPTOISOLTR 5KV 1CH TRANS 8-MDIP
Packaging: Bulk
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 30V
Number of Channels: 1
Description: OPTOISOLTR 5KV 1CH TRANS 8-MDIP
Packaging: Bulk
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 30V
Number of Channels: 1
на замовлення 1016 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.60 грн |
| 10+ | 96.73 грн |
| 100+ | 69.54 грн |
| 500+ | 55.23 грн |
| 1000+ | 52.14 грн |
| FOD2711ASD |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Description: OPTOISOLATOR 5KV TRANSISTOR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
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| FOD2711ASD |
![]() |
Виробник: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Description: OPTOISOLATOR 5KV TRANSISTOR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
на замовлення 415 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.27 грн |
| 10+ | 76.49 грн |
| 100+ | 56.64 грн |
| MURA220T3 |
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Виробник: onsemi
Description: DIODE STANDARD 200V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE STANDARD 200V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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од. на суму грн.
| MCH6626-TL-E |
Виробник: onsemi
Description: MOSFET N/P-CH 20V 1.6A 6MCPH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 800mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MCPH
Description: MOSFET N/P-CH 20V 1.6A 6MCPH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 800mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MCPH
на замовлення 48750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2664+ | 8.05 грн |
| MC14043BD |
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Виробник: onsemi
Description: IC LATCH R-S QUAD NOR 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
Description: IC LATCH R-S QUAD NOR 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
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