| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NCP4208MNR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; QFN48; buck Type of integrated circuit: PMIC Frequency: 170...750kHz; 0.25...9MHz Mounting: SMD Case: QFN48 Topology: buck Number of channels: 1 Operating temperature: 0...85°C |
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| CAV24C16WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Interface: I2C Kind of package: reel; tape Kind of interface: serial Mounting: SMD Case: SOIC8 Operating temperature: -40...125°C Access time: 900ns Operating voltage: 2.5...5.5V Memory: 16kb EEPROM Memory organisation: 2048x8bit Clock frequency: 400kHz Kind of memory: EEPROM |
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| NCV4264-2CST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.1A Number of channels: 1 Output voltage: 3.3V Application: automotive industry |
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| NCV4264-2CST50T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.1A Number of channels: 1 Output voltage: 5V Application: automotive industry |
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| NCV4264-2D33R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; Ch: 1 Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Case: SO8 Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.1A Number of channels: 1 Output voltage: 3.3V Application: automotive industry |
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| NCV4264-2ST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.1A Number of channels: 1 Output voltage: 3.3V Application: automotive industry |
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| NCV4264-2ST50T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.1A Number of channels: 1 Output voltage: 5V Application: automotive industry |
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MJH6284G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO247-3 Kind of package: tube Kind of transistor: Darlington Case: TO247-3 Mounting: THT Type of transistor: NPN Collector current: 20A Power dissipation: 160W Collector-emitter voltage: 100V Polarisation: bipolar |
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BC549CG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 30V; 100mA; 500mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Case: TO92 Mounting: THT Frequency: 300MHz Power: 0.5W |
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| FDD86250-F085 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 150V; 50A; 160W; DPAK,TO252; SMT Type of transistor: N-MOSFET Technology: PowerTrench® Drain-source voltage: 150V Drain current: 50A Power dissipation: 160W Case: DPAK; TO252 Gate-source voltage: 20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhancement Application: automotive industry Electrical mounting: SMT |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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FDPF2D3N10C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 157A Pulsed drain current: 888A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhancement |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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MBR160G | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.75V; bulk Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.75V Kind of package: bulk |
на замовлення 664 шт: термін постачання 21-30 дні (днів) |
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| MC74ACT574DTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: TTL Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Family: ACT Kind of output: 3-state Manufacturer series: ACT |
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| FDMS0312S | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Pulsed drain current: 90A Power dissipation: 46W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
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| FDMS7602S | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 28/46nC On-state resistance: 12/7.2mΩ Power dissipation: 2.2/2.5W Gate-source voltage: ±20/±20V Drain-source voltage: 30/30V Drain current: 30/30A Kind of channel: enhancement Type of transistor: N-MOSFET x2 Case: Power56 |
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В кошику од. на суму грн. | |||||||||||||||
| MMBD914 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.35W Capacitance: 4pF |
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| SMMBD914LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
| SMMBD914LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
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FAN73833MX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP8 Output current: -650...350mA Number of channels: 2 Supply voltage: 11...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 100ns Pulse fall time: 80ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
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В кошику од. на суму грн. | ||||||||||||||
| FDP053N08B-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 480A; 146W; TO220-3 Case: TO220-3 Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 65.4nC On-state resistance: 5.3mΩ Drain current: 120A Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 146W Pulsed drain current: 480A Kind of channel: enhancement Type of transistor: N-MOSFET |
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| FDMT80080DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8 Case: DFNW8 Kind of package: reel; tape Gate charge: 273nC On-state resistance: 2.22mΩ Power dissipation: 156W Drain current: 160A Gate-source voltage: ±20V Drain-source voltage: 80V Pulsed drain current: 1453A Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar |
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| FDMT800120DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8 Case: DFNW8 Kind of package: reel; tape Gate charge: 107nC On-state resistance: 7.7mΩ Power dissipation: 156W Drain current: 81A Gate-source voltage: ±20V Drain-source voltage: 120V Pulsed drain current: 767A Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar |
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| FDMT80040DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8 Case: DFNW8 Kind of package: reel; tape Gate charge: 338nC On-state resistance: 0.9mΩ Power dissipation: 156W Drain current: 265A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 2644A Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar |
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| FDMT80060DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8 Case: DFNW8 Kind of package: reel; tape Gate charge: 238nC On-state resistance: 1.7mΩ Power dissipation: 156W Drain current: 184A Gate-source voltage: ±20V Drain-source voltage: 60V Pulsed drain current: 1825A Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
1N4149 | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Power dissipation: 0.5W Reverse recovery time: 4ns |
на замовлення 4900 шт: термін постачання 21-30 дні (днів) |
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| NCP2823BFCT1G | ONSEMI |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 3W; 2.5÷5.5VDC; Amp.class: D; WLCSP9; 4Ω Type of integrated circuit: audio amplifier Case: WLCSP9 Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL) Mounting: SMD Kind of package: reel; tape Output power: 3W Supply voltage: 2.5...5.5V DC Impedance: 4Ω Amplifier class: D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP2820FCT1G | ONSEMI |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; 4Ω Type of integrated circuit: audio amplifier Case: flip chip9 Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL) Mounting: SMD Kind of package: reel; tape Output power: 2.65W Supply voltage: 2.5...5.5V DC Impedance: 4Ω Amplifier class: D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP2820MUTBG | ONSEMI |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; uDFN8 Type of integrated circuit: audio amplifier Case: uDFN8 Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL) Mounting: SMD Kind of package: reel; tape Output power: 2.65W Supply voltage: 2.5...5.5V DC Impedance: 4Ω Amplifier class: D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP2823BFCT2G | ONSEMI |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 3W; 2.5÷5.5VDC; Amp.class: D; WLCSP9; 4Ω Type of integrated circuit: audio amplifier Case: WLCSP9 Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL) Mounting: SMD Kind of package: reel; tape Output power: 3W Supply voltage: 2.5...5.5V DC Impedance: 4Ω Amplifier class: D |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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50A02MH-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.5A; 0.6W; MCPH3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Case: MCPH3 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 690MHz Power dissipation: 0.6W |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
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BAS16 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRS1540T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 1.5A Semiconductor structure: single diode Max. forward voltage: 0.54V Kind of package: reel; tape Max. load current: 3A |
на замовлення 2033 шт: термін постачання 21-30 дні (днів) |
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| EMI8142MUTAG | ONSEMI |
Category: Filters - integrated circuitsDescription: Filter: digital; EMI; XDFN10; 5GHz; Ch: 2; USB Mounting: SMD Type of filter: digital Kind of filter: EMI Case: XDFN10 Application: USB Number of channels: 2 Cutoff frequency: 5GHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74LCX126BQX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA Technology: CMOS Type of integrated circuit: digital Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 10µA Number of channels: 4 Supply voltage: 2...3.6V DC Kind of integrated circuit: buffer; non-inverting Kind of output: 3-state Case: QFN14 Manufacturer series: LCX |
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В кошику од. на суму грн. | |||||||||||||||
| NUF4220MNT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; bidirectional; DFN8; Ch: 4; reel,tape Mounting: SMD Semiconductor structure: bidirectional Case: DFN8 Type of diode: TVS array Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDG6301N-F085 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET x2 Polarisation: unipolar On-state resistance: 7Ω Drain current: 0.22A Power dissipation: 0.3W Gate-source voltage: ±8V Drain-source voltage: 25V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NVTYS004N04CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 84A Pulsed drain current: 371A Power dissipation: 27W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MB10S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX84B5V6LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: BZX84B |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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BZX84C5V6LT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: BZX84C |
на замовлення 9900 шт: термін постачання 21-30 дні (днів) |
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| SZMMBZ5232BLT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: MMBZ52xxBLT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC14067BDWG | ONSEMI |
Category: UnclassifiedDescription: MC14067BDWG |
на замовлення 1810 шт: термін постачання 21-30 дні (днів) |
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| NVMTSC1D3N08M7TXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 348A; Idm: 900A; 144W; TDFNW8 Kind of package: reel; tape Gate charge: 196nC On-state resistance: 1.25mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 144W Drain current: 348A Pulsed drain current: 900A Case: TDFNW8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar |
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В кошику од. на суму грн. | |||||||||||||||
| NTMTSC1D5N08MC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8 Kind of package: reel; tape Gate charge: 101nC On-state resistance: 1.56mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 250W Drain current: 287A Pulsed drain current: 3500A Case: DFNW8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar |
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В кошику од. на суму грн. | |||||||||||||||
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NCP1117IST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
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В кошику од. на суму грн. | ||||||||||||||
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NCP1117ISTAT3G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.2V Output voltage: 1.25...18.8V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
на замовлення 928 шт: термін постачання 21-30 дні (днів) |
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| NCP1117IDT50T4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; NCP1117 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 5V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
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| NCP1117DTARKG | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.2V Output voltage: 1.25...18.8V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
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| NCP1117IDT33T4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 3.3V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
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| NCP1117IST50T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
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| NCP1117IST18T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
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| NCP1117ST15T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 1.5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 20V |
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| NCP1117LPSTADT3G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.4V Output voltage: 1.25...15V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117LP Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.25...18V |
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| NCP1117LPST18T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.4V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117LP Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.25...18V |
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|
NCP1117LPST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.4V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117LP Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V |
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|
NCP1117LPST50T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.4V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117LP Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V |
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| NCP3065MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; DFN8; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter; LED driver Case: DFN8 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Output current: 1.5A Number of channels: 1 Input voltage: 3...40V DC Operating voltage: 3...40V DC Frequency: 110...190kHz Topology: boost; buck; buck-boost |
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|
FDB28N30TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 28A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.129Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 485 шт: термін постачання 21-30 дні (днів) |
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| NVBLS0D5N04CTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 4700A; 97.4W Type of transistor: N-MOSFET Polarisation: unipolar Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 185nC On-state resistance: 570µΩ Power dissipation: 97.4W Drain-source voltage: 40V Drain current: 300A Pulsed drain current: 4700A Kind of channel: enhancement |
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| NTBLS001N06C | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L Mounting: SMD Case: H-PSOF8L Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 143nC On-state resistance: 0.9mΩ Power dissipation: 284W Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 422A Pulsed drain current: 900A Polarisation: unipolar |
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| NCP4208MNR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN48; buck
Type of integrated circuit: PMIC
Frequency: 170...750kHz; 0.25...9MHz
Mounting: SMD
Case: QFN48
Topology: buck
Number of channels: 1
Operating temperature: 0...85°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN48; buck
Type of integrated circuit: PMIC
Frequency: 170...750kHz; 0.25...9MHz
Mounting: SMD
Case: QFN48
Topology: buck
Number of channels: 1
Operating temperature: 0...85°C
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| CAV24C16WE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Access time: 900ns
Operating voltage: 2.5...5.5V
Memory: 16kb EEPROM
Memory organisation: 2048x8bit
Clock frequency: 400kHz
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Access time: 900ns
Operating voltage: 2.5...5.5V
Memory: 16kb EEPROM
Memory organisation: 2048x8bit
Clock frequency: 400kHz
Kind of memory: EEPROM
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| NCV4264-2CST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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| NCV4264-2CST50T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
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| NCV4264-2D33R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; Ch: 1
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; Ch: 1
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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| NCV4264-2ST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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| NCV4264-2ST50T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
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| MJH6284G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO247-3
Kind of package: tube
Kind of transistor: Darlington
Case: TO247-3
Mounting: THT
Type of transistor: NPN
Collector current: 20A
Power dissipation: 160W
Collector-emitter voltage: 100V
Polarisation: bipolar
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO247-3
Kind of package: tube
Kind of transistor: Darlington
Case: TO247-3
Mounting: THT
Type of transistor: NPN
Collector current: 20A
Power dissipation: 160W
Collector-emitter voltage: 100V
Polarisation: bipolar
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| BC549CG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
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| FDD86250-F085 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 150V; 50A; 160W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: PowerTrench®
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 160W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 150V; 50A; 160W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: PowerTrench®
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 160W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 92.10 грн |
| FDPF2D3N10C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 465.67 грн |
| 4+ | 307.72 грн |
| 9+ | 290.94 грн |
| 50+ | 279.75 грн |
| MBR160G |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.75V; bulk
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.75V
Kind of package: bulk
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.75V; bulk
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.75V
Kind of package: bulk
на замовлення 664 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.52 грн |
| 25+ | 16.07 грн |
| 29+ | 13.91 грн |
| 50+ | 12.47 грн |
| 100+ | 11.11 грн |
| 250+ | 9.67 грн |
| 500+ | 8.87 грн |
| MC74ACT574DTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: ACT
Kind of output: 3-state
Manufacturer series: ACT
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Family: ACT
Kind of output: 3-state
Manufacturer series: ACT
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| FDMS0312S |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 46W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 46W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FDMS7602S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 28/46nC
On-state resistance: 12/7.2mΩ
Power dissipation: 2.2/2.5W
Gate-source voltage: ±20/±20V
Drain-source voltage: 30/30V
Drain current: 30/30A
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: Power56
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 28/46nC
On-state resistance: 12/7.2mΩ
Power dissipation: 2.2/2.5W
Gate-source voltage: ±20/±20V
Drain-source voltage: 30/30V
Drain current: 30/30A
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: Power56
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| MMBD914 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
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| SMMBD914LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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| SMMBD914LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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| FAN73833MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
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| FDP053N08B-F102 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 480A; 146W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 65.4nC
On-state resistance: 5.3mΩ
Drain current: 120A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 146W
Pulsed drain current: 480A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 480A; 146W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 65.4nC
On-state resistance: 5.3mΩ
Drain current: 120A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 146W
Pulsed drain current: 480A
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| FDMT80080DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 273nC
On-state resistance: 2.22mΩ
Power dissipation: 156W
Drain current: 160A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 1453A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 273nC
On-state resistance: 2.22mΩ
Power dissipation: 156W
Drain current: 160A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 1453A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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| FDMT800120DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 107nC
On-state resistance: 7.7mΩ
Power dissipation: 156W
Drain current: 81A
Gate-source voltage: ±20V
Drain-source voltage: 120V
Pulsed drain current: 767A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 107nC
On-state resistance: 7.7mΩ
Power dissipation: 156W
Drain current: 81A
Gate-source voltage: ±20V
Drain-source voltage: 120V
Pulsed drain current: 767A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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| FDMT80040DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 338nC
On-state resistance: 0.9mΩ
Power dissipation: 156W
Drain current: 265A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2644A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 338nC
On-state resistance: 0.9mΩ
Power dissipation: 156W
Drain current: 265A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2644A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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| FDMT80060DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 238nC
On-state resistance: 1.7mΩ
Power dissipation: 156W
Drain current: 184A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 1825A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 238nC
On-state resistance: 1.7mΩ
Power dissipation: 156W
Drain current: 184A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 1825A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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| 1N4149 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.5W
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.5W
Reverse recovery time: 4ns
на замовлення 4900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 167+ | 2.58 грн |
| 239+ | 1.68 грн |
| 278+ | 1.44 грн |
| 309+ | 1.29 грн |
| 500+ | 1.20 грн |
| 1000+ | 1.15 грн |
| NCP2823BFCT1G |
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Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; 2.5÷5.5VDC; Amp.class: D; WLCSP9; 4Ω
Type of integrated circuit: audio amplifier
Case: WLCSP9
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Mounting: SMD
Kind of package: reel; tape
Output power: 3W
Supply voltage: 2.5...5.5V DC
Impedance: 4Ω
Amplifier class: D
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; 2.5÷5.5VDC; Amp.class: D; WLCSP9; 4Ω
Type of integrated circuit: audio amplifier
Case: WLCSP9
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Mounting: SMD
Kind of package: reel; tape
Output power: 3W
Supply voltage: 2.5...5.5V DC
Impedance: 4Ω
Amplifier class: D
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| NCP2820FCT1G |
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Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; 4Ω
Type of integrated circuit: audio amplifier
Case: flip chip9
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Mounting: SMD
Kind of package: reel; tape
Output power: 2.65W
Supply voltage: 2.5...5.5V DC
Impedance: 4Ω
Amplifier class: D
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; 4Ω
Type of integrated circuit: audio amplifier
Case: flip chip9
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Mounting: SMD
Kind of package: reel; tape
Output power: 2.65W
Supply voltage: 2.5...5.5V DC
Impedance: 4Ω
Amplifier class: D
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| NCP2820MUTBG |
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Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; uDFN8
Type of integrated circuit: audio amplifier
Case: uDFN8
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Mounting: SMD
Kind of package: reel; tape
Output power: 2.65W
Supply voltage: 2.5...5.5V DC
Impedance: 4Ω
Amplifier class: D
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; uDFN8
Type of integrated circuit: audio amplifier
Case: uDFN8
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Mounting: SMD
Kind of package: reel; tape
Output power: 2.65W
Supply voltage: 2.5...5.5V DC
Impedance: 4Ω
Amplifier class: D
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| NCP2823BFCT2G |
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Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; 2.5÷5.5VDC; Amp.class: D; WLCSP9; 4Ω
Type of integrated circuit: audio amplifier
Case: WLCSP9
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Mounting: SMD
Kind of package: reel; tape
Output power: 3W
Supply voltage: 2.5...5.5V DC
Impedance: 4Ω
Amplifier class: D
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; 2.5÷5.5VDC; Amp.class: D; WLCSP9; 4Ω
Type of integrated circuit: audio amplifier
Case: WLCSP9
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Mounting: SMD
Kind of package: reel; tape
Output power: 3W
Supply voltage: 2.5...5.5V DC
Impedance: 4Ω
Amplifier class: D
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| 50A02MH-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.6W; MCPH3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: MCPH3
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 690MHz
Power dissipation: 0.6W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.6W; MCPH3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: MCPH3
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 690MHz
Power dissipation: 0.6W
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 35+ | 11.51 грн |
| 100+ | 9.11 грн |
| 123+ | 7.67 грн |
| 336+ | 7.27 грн |
| 1000+ | 7.19 грн |
| BAS16 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
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| MBRS1540T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
Max. load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
Max. load current: 3A
на замовлення 2033 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.43 грн |
| 17+ | 24.22 грн |
| 25+ | 21.10 грн |
| 50+ | 19.02 грн |
| 100+ | 17.02 грн |
| 250+ | 14.71 грн |
| 500+ | 13.27 грн |
| EMI8142MUTAG |
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Виробник: ONSEMI
Category: Filters - integrated circuits
Description: Filter: digital; EMI; XDFN10; 5GHz; Ch: 2; USB
Mounting: SMD
Type of filter: digital
Kind of filter: EMI
Case: XDFN10
Application: USB
Number of channels: 2
Cutoff frequency: 5GHz
Category: Filters - integrated circuits
Description: Filter: digital; EMI; XDFN10; 5GHz; Ch: 2; USB
Mounting: SMD
Type of filter: digital
Kind of filter: EMI
Case: XDFN10
Application: USB
Number of channels: 2
Cutoff frequency: 5GHz
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| 74LCX126BQX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 4
Supply voltage: 2...3.6V DC
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Case: QFN14
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 4
Supply voltage: 2...3.6V DC
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Case: QFN14
Manufacturer series: LCX
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| NUF4220MNT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN8; Ch: 4; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Case: DFN8
Type of diode: TVS array
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN8; Ch: 4; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Case: DFN8
Type of diode: TVS array
Number of channels: 4
Kind of package: reel; tape
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| FDG6301N-F085 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 7Ω
Drain current: 0.22A
Power dissipation: 0.3W
Gate-source voltage: ±8V
Drain-source voltage: 25V
Application: automotive industry
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 7Ω
Drain current: 0.22A
Power dissipation: 0.3W
Gate-source voltage: ±8V
Drain-source voltage: 25V
Application: automotive industry
Kind of channel: enhancement
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| NVTYS004N04CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 84A
Pulsed drain current: 371A
Power dissipation: 27W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 84A
Pulsed drain current: 371A
Power dissipation: 27W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MB10S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
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| BZX84B5V6LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84B
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84B
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 6.39 грн |
| BZX84C5V6LT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
на замовлення 9900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.89 грн |
| 120+ | 3.36 грн |
| 236+ | 1.69 грн |
| 500+ | 1.29 грн |
| 1000+ | 1.19 грн |
| 5000+ | 1.13 грн |
| SZMMBZ5232BLT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
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| MC14067BDWG |
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на замовлення 1810 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 47.51 грн |
| NVMTSC1D3N08M7TXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 348A; Idm: 900A; 144W; TDFNW8
Kind of package: reel; tape
Gate charge: 196nC
On-state resistance: 1.25mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 144W
Drain current: 348A
Pulsed drain current: 900A
Case: TDFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 348A; Idm: 900A; 144W; TDFNW8
Kind of package: reel; tape
Gate charge: 196nC
On-state resistance: 1.25mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 144W
Drain current: 348A
Pulsed drain current: 900A
Case: TDFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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| NTMTSC1D5N08MC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8
Kind of package: reel; tape
Gate charge: 101nC
On-state resistance: 1.56mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 250W
Drain current: 287A
Pulsed drain current: 3500A
Case: DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8
Kind of package: reel; tape
Gate charge: 101nC
On-state resistance: 1.56mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 250W
Drain current: 287A
Pulsed drain current: 3500A
Case: DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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| NCP1117IST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
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| NCP1117ISTAT3G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...18.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...18.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
на замовлення 928 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 39.59 грн |
| 18+ | 22.46 грн |
| 100+ | 17.90 грн |
| 500+ | 17.26 грн |
| NCP1117IDT50T4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; NCP1117
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; NCP1117
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
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| NCP1117DTARKG |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...18.8V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.8V; 1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.25...18.8V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
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| NCP1117IDT33T4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
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| NCP1117IST50T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
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| NCP1117IST18T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
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| NCP1117ST15T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 20V
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| NCP1117LPSTADT3G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...18V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...18V
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| NCP1117LPST18T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...18V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...18V
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| NCP1117LPST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
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| NCP1117LPST50T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.4V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117LP
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
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| NCP3065MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; DFN8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 1.5A
Number of channels: 1
Input voltage: 3...40V DC
Operating voltage: 3...40V DC
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; DFN8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 1.5A
Number of channels: 1
Input voltage: 3...40V DC
Operating voltage: 3...40V DC
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
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| FDB28N30TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 485 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 104.70 грн |
| 10+ | 86.32 грн |
| 20+ | 83.92 грн |
| NVBLS0D5N04CTXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 4700A; 97.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 185nC
On-state resistance: 570µΩ
Power dissipation: 97.4W
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 4700A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 4700A; 97.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 185nC
On-state resistance: 570µΩ
Power dissipation: 97.4W
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 4700A
Kind of channel: enhancement
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| NTBLS001N06C |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L
Mounting: SMD
Case: H-PSOF8L
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 143nC
On-state resistance: 0.9mΩ
Power dissipation: 284W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 422A
Pulsed drain current: 900A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L
Mounting: SMD
Case: H-PSOF8L
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 143nC
On-state resistance: 0.9mΩ
Power dissipation: 284W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 422A
Pulsed drain current: 900A
Polarisation: unipolar
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