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NCV8752ASN30T1G ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
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NCV8752BMX28TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
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NCV8752BMX33TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 3.3V
Number of channels: 1
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NCV8752BSN28T1G ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; TSOP5; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
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NCV8752BSN30T1G ONSEMI NCV8752-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
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SMMUN2114LT1G SMMUN2114LT1G ONSEMI dta114y-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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MBRD650CTT4G MBRD650CTT4G ONSEMI MBRD650CTG.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
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2SB1215S-TL-E ONSEMI en2539-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Case: DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 1W
Polarisation: bipolar
Collector-emitter voltage: 100V
Current gain: 140...280
Kind of package: reel; tape
Type of transistor: PNP
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FODM121A FODM121A ONSEMI FODM121A.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Manufacturer series: FODM121
Case: Mini-flat 4pin
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 3µs
Turn-on time: 3µs
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100-300%@5mA
Insulation voltage: 3.75kV
на замовлення 1857 шт:
термін постачання 14-30 дні (днів)
16+29.68 грн
21+20.55 грн
100+18.46 грн
Мінімальне замовлення: 16
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FCB125N65S3 ONSEMI fcb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCH125N65S3R0-F155 ONSEMI fch125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3 ONSEMI fcp125n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3R0 ONSEMI fcp125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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NTP125N65S3H ONSEMI ntp125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NVB125N65S3 ONSEMI nvb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCPF125N65S3 ONSEMI fcpf125n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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FCMT125N65S3 ONSEMI fcmt125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTHL125N65S3H ONSEMI nthl125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NTPF125N65S3H ONSEMI ntpf125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NVHL025N65S3 ONSEMI nvhl025n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
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FDB28N30TM FDB28N30TM ONSEMI FDB28N30TM.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 50nC
на замовлення 698 шт:
термін постачання 14-30 дні (днів)
3+185.28 грн
4+133.63 грн
10+105.23 грн
20+96.05 грн
100+86.86 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDA38N30 FDA38N30 ONSEMI fda38n30-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Pulsed drain current: 150A
на замовлення 384 шт:
термін постачання 14-30 дні (днів)
2+298.61 грн
5+197.94 грн
10+183.74 грн
Мінімальне замовлення: 2
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HUF75545P3 HUF75545P3 ONSEMI HUF75545P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 270W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 235nC
Kind of channel: enhancement
Kind of package: tube
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
3+163.69 грн
10+126.11 грн
20+125.28 грн
Мінімальне замовлення: 3
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HUF75545S3ST ONSEMI HUF75545S3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 75A; 270W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 80V
Drain current: 75A
Power dissipation: 270W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 235nC
Kind of channel: enhancement
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FDS6699S FDS6699S ONSEMI FDS6699S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.1Ω
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMSD701T1G MMSD701T1G ONSEMI mmsd301t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Capacitance: 1pF
Power dissipation: 0.225W
на замовлення 308 шт:
термін постачання 14-30 дні (днів)
36+12.59 грн
50+8.44 грн
61+6.87 грн
100+6.21 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SMMSD701T1G SMMSD701T1G ONSEMI mmsd301t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
18+25.18 грн
22+19.38 грн
26+16.45 грн
100+12.28 грн
Мінімальне замовлення: 18
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LM337T LM337T ONSEMI LM337T-FAI.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -37...-1.2V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: tube
Heatsink thickness: 0.51...0.61mm
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DF04M DF04M ONSEMI DF005-10m.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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BC847BPDW1T3G ONSEMI bc846bpdw1t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 45V; 100mA; 380mW
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88A; SOT363
Mounting: SMD
Frequency: 100MHz
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BC847BPDXV6T1G ONSEMI bc847bpdxv6t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBC847BPDW1T3G SBC847BPDW1T3G ONSEMI bc846bpdw1t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC847BPDXV6T1G ONSEMI bc847bpdxv6t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NTGS3433T1G ONSEMI ntgs3433t1-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.35A
Pulsed drain current: -14A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14023BDR2G MC14023BDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: NAND
Mounting: SMD
Case: SO14
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of package: reel; tape
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MBRS2040LT3G MBRS2040LT3G ONSEMI MBRS2040LT3G.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
на замовлення 5047 шт:
термін постачання 14-30 дні (днів)
16+28.78 грн
21+20.04 грн
25+17.71 грн
50+15.95 грн
100+14.36 грн
250+12.28 грн
500+10.77 грн
1000+9.27 грн
2500+9.19 грн
Мінімальне замовлення: 16
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SS14 SS14 ONSEMI SSxx.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
на замовлення 7247 шт:
термін постачання 14-30 дні (днів)
25+17.99 грн
30+14.20 грн
34+12.53 грн
50+9.10 грн
100+7.93 грн
250+6.76 грн
500+6.01 грн
1000+5.43 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
NCV8184DR2G ONSEMI ncv8184-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: -3...45V
Output current: 70mA
Number of channels: 1
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NCV8184DTRKG ONSEMI ncv8184-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SMD
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: DPAK4
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: -3...45V
Output current: 70mA
Number of channels: 1
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NCV8184PDR2G ONSEMI ncv8184-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: -3...45V
Output current: 70mA
Number of channels: 1
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MC74LVXT4051DR2G MC74LVXT4051DR2G ONSEMI mc74lvxt4051-d.pdf Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Mounting: SMD
Operating temperature: -55...125°C
Case: SO16
Type of integrated circuit: digital
Technology: CMOS; TTL
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Supply voltage: 2.5...6V DC
Quiescent current: 80µA
Number of channels: 1
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MC74LVXT4051DTR2G ONSEMI MC74LVXT4051-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 1
Number of inputs: 8
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MC74LVXT4051DTRG ONSEMI MC74LVXT4051-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Operating temperature: -55...125°C
Family: LVXT
Kind of package: reel; tape
Number of channels: 1
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of inputs: 8
Technology: CMOS; TTL
Manufacturer series: LVXT
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MC74LVXT4052DTG MC74LVXT4052DTG ONSEMI MC74LVXT4052-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 2
Number of inputs: 8
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MC74LVXT4052DTRG ONSEMI MC74LVXT4052-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Operating temperature: -55...125°C
Family: LVXT
Kind of package: reel; tape
Number of channels: 2
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 8
Technology: CMOS; TTL
Manufacturer series: LVXT
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MC74LVXT4053DR2G MC74LVXT4053DR2G ONSEMI MC74LVXT4053-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Number of inputs: 6
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MC74LVXT4053DTG ONSEMI MC74LVXT4053-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Number of inputs: 6
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MC74LVXT4053DTRG ONSEMI MC74LVXT4053-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Operating temperature: -55...125°C
Family: LVXT
Kind of package: reel; tape
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of inputs: 6
Technology: CMOS; TTL
Manufacturer series: LVXT
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RFP12N10L RFP12N10L ONSEMI RFP12N10L.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
6+82.75 грн
10+52.62 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NTTFS012N10MDTAG ONSEMI nttfs012n10md-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 217A
Power dissipation: 62W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMYS012N10MCLTWG ONSEMI nvmys012n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 283A
Power dissipation: 36W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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1SMB5913BT3G 1SMB5913BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 2950 шт:
термін постачання 14-30 дні (днів)
20+22.49 грн
30+13.95 грн
37+11.44 грн
50+9.94 грн
100+8.69 грн
500+6.76 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MMSZ5226BT1G MMSZ5226BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 799 шт:
термін постачання 14-30 дні (днів)
42+10.79 грн
64+6.60 грн
91+4.59 грн
107+3.91 грн
250+3.15 грн
500+2.70 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
MMSZ4684T1G MMSZ4684T1G ONSEMI MMSZ4xxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
на замовлення 3512 шт:
термін постачання 14-30 дні (днів)
63+7.20 грн
84+5.01 грн
156+2.68 грн
500+1.88 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
FUSB302BMPX ONSEMI fusb302b-d.pdf Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps
Supply voltage: 2.8...5.5V
Interface: USB
USB speed: Full Speed
Data transfer rate: 5Gbps
Mounting: SMD
Kind of integrated circuit: transceiver
Operating temperature: -40...125°C
DC supply current: 25µA
Version: ESD
Type of integrated circuit: interface
Case: WQFN14
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FUSB302B01MPX ONSEMI fusb302b-d.pdf Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB
Supply voltage: 2.7...21V
Interface: I2C; USB
USB speed: Full Speed
Data transfer rate: 5Gbps
Mounting: SMD
Kind of integrated circuit: transceiver
Operating temperature: -40...85°C
Type of integrated circuit: interface
Case: WQFN14
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FUSB302B11MPX ONSEMI fusb302b-d.pdf Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps
Supply voltage: 2.85...5.5V
Interface: I2C; USB; USB 2.0
USB speed: Full Speed
Data transfer rate: 5Gbps
Mounting: SMD
Kind of integrated circuit: transceiver
Operating temperature: -40...85°C
Version: Standard; USB 2.0
Type of integrated circuit: interface
Case: WQFN14
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FUSB302BUCX ONSEMI fusb302b-d.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; Full Speed; 2.7÷5.5VDC; WLCSP9
Supply voltage: 2.7...5.5V DC
USB speed: Full Speed
Mounting: SMD
Kind of integrated circuit: USB C controller
Operating temperature: -40...85°C
Type of integrated circuit: interface
Case: WLCSP9
Kind of package: reel; tape
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1N4003G 1N4003G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 449 шт:
термін постачання 14-30 дні (днів)
56+8.09 грн
68+6.18 грн
77+5.43 грн
100+4.19 грн
112+3.73 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
1N4003RLG 1N4003RLG ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
на замовлення 4420 шт:
термін постачання 14-30 дні (днів)
28+16.19 грн
49+8.69 грн
100+5.50 грн
500+4.06 грн
1000+3.57 грн
Мінімальне замовлення: 28
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NCV8752ASN30T1G ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
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NCV8752BMX28TCG ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
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NCV8752BMX33TCG ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 3.3V
Number of channels: 1
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NCV8752BSN28T1G ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; TSOP5; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
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NCV8752BSN30T1G NCV8752-D.PDF
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
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SMMUN2114LT1G dta114y-d.pdf
SMMUN2114LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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MBRD650CTT4G MBRD650CTG.PDF
MBRD650CTT4G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
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2SB1215S-TL-E en2539-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Case: DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 1W
Polarisation: bipolar
Collector-emitter voltage: 100V
Current gain: 140...280
Kind of package: reel; tape
Type of transistor: PNP
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FODM121A FODM121A.pdf
FODM121A
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Manufacturer series: FODM121
Case: Mini-flat 4pin
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 3µs
Turn-on time: 3µs
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100-300%@5mA
Insulation voltage: 3.75kV
на замовлення 1857 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.68 грн
21+20.55 грн
100+18.46 грн
Мінімальне замовлення: 16
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FCB125N65S3 fcb125n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCH125N65S3R0-F155 fch125n65s3r0-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3 fcp125n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3R0 fcp125n65s3r0-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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NTP125N65S3H ntp125n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NVB125N65S3 nvb125n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCPF125N65S3 fcpf125n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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FCMT125N65S3 fcmt125n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTHL125N65S3H nthl125n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NTPF125N65S3H ntpf125n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NVHL025N65S3 nvhl025n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
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FDB28N30TM FDB28N30TM.pdf
FDB28N30TM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 50nC
на замовлення 698 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+185.28 грн
4+133.63 грн
10+105.23 грн
20+96.05 грн
100+86.86 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDA38N30 fda38n30-d.pdf
FDA38N30
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Pulsed drain current: 150A
на замовлення 384 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+298.61 грн
5+197.94 грн
10+183.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
HUF75545P3 HUF75545P3.pdf
HUF75545P3
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 270W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 235nC
Kind of channel: enhancement
Kind of package: tube
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+163.69 грн
10+126.11 грн
20+125.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
HUF75545S3ST HUF75545S3S-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 75A; 270W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 80V
Drain current: 75A
Power dissipation: 270W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 235nC
Kind of channel: enhancement
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FDS6699S FDS6699S.pdf
FDS6699S
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.1Ω
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMSD701T1G mmsd301t1-d.pdf
MMSD701T1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Capacitance: 1pF
Power dissipation: 0.225W
на замовлення 308 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.59 грн
50+8.44 грн
61+6.87 грн
100+6.21 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SMMSD701T1G mmsd301t1-d.pdf
SMMSD701T1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.18 грн
22+19.38 грн
26+16.45 грн
100+12.28 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
LM337T LM337T-FAI.pdf
LM337T
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -37...-1.2V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: tube
Heatsink thickness: 0.51...0.61mm
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DF04M DF005-10m.pdf
DF04M
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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BC847BPDW1T3G bc846bpdw1t1-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 45V; 100mA; 380mW
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88A; SOT363
Mounting: SMD
Frequency: 100MHz
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BC847BPDXV6T1G bc847bpdxv6t1-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBC847BPDW1T3G bc846bpdw1t1-d.pdf
SBC847BPDW1T3G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC847BPDXV6T1G bc847bpdxv6t1-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NTGS3433T1G ntgs3433t1-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.35A
Pulsed drain current: -14A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14023BDR2G MC14001B-D.pdf
MC14023BDR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: NAND
Mounting: SMD
Case: SO14
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of package: reel; tape
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MBRS2040LT3G MBRS2040LT3G.PDF
MBRS2040LT3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
на замовлення 5047 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+28.78 грн
21+20.04 грн
25+17.71 грн
50+15.95 грн
100+14.36 грн
250+12.28 грн
500+10.77 грн
1000+9.27 грн
2500+9.19 грн
Мінімальне замовлення: 16
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SS14 SSxx.pdf
SS14
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
на замовлення 7247 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+17.99 грн
30+14.20 грн
34+12.53 грн
50+9.10 грн
100+7.93 грн
250+6.76 грн
500+6.01 грн
1000+5.43 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
NCV8184DR2G ncv8184-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: -3...45V
Output current: 70mA
Number of channels: 1
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NCV8184DTRKG ncv8184-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SMD
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: DPAK4
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: -3...45V
Output current: 70mA
Number of channels: 1
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NCV8184PDR2G ncv8184-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: -3...45V
Output current: 70mA
Number of channels: 1
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MC74LVXT4051DR2G mc74lvxt4051-d.pdf
MC74LVXT4051DR2G
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Mounting: SMD
Operating temperature: -55...125°C
Case: SO16
Type of integrated circuit: digital
Technology: CMOS; TTL
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Supply voltage: 2.5...6V DC
Quiescent current: 80µA
Number of channels: 1
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MC74LVXT4051DTR2G MC74LVXT4051-D.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 1
Number of inputs: 8
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MC74LVXT4051DTRG MC74LVXT4051-D.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Operating temperature: -55...125°C
Family: LVXT
Kind of package: reel; tape
Number of channels: 1
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of inputs: 8
Technology: CMOS; TTL
Manufacturer series: LVXT
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MC74LVXT4052DTG MC74LVXT4052-D.pdf
MC74LVXT4052DTG
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 2
Number of inputs: 8
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MC74LVXT4052DTRG MC74LVXT4052-D.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Operating temperature: -55...125°C
Family: LVXT
Kind of package: reel; tape
Number of channels: 2
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 8
Technology: CMOS; TTL
Manufacturer series: LVXT
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MC74LVXT4053DR2G MC74LVXT4053-D.pdf
MC74LVXT4053DR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Number of inputs: 6
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MC74LVXT4053DTG MC74LVXT4053-D.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Manufacturer series: LVXT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP16
Type of integrated circuit: digital
Technology: CMOS; TTL
Family: LVXT
Kind of package: reel; tape
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Number of inputs: 6
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MC74LVXT4053DTRG MC74LVXT4053-D.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Operating temperature: -55...125°C
Family: LVXT
Kind of package: reel; tape
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of inputs: 6
Technology: CMOS; TTL
Manufacturer series: LVXT
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RFP12N10L description RFP12N10L.pdf
RFP12N10L
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+82.75 грн
10+52.62 грн
Мінімальне замовлення: 6
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NTTFS012N10MDTAG nttfs012n10md-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 217A
Power dissipation: 62W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMYS012N10MCLTWG nvmys012n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 283A
Power dissipation: 36W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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1SMB5913BT3G 1SMB59xxBT3G.PDF
1SMB5913BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 2950 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.49 грн
30+13.95 грн
37+11.44 грн
50+9.94 грн
100+8.69 грн
500+6.76 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MMSZ5226BT1G MMSZ52xxT1G.PDF
MMSZ5226BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 799 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.79 грн
64+6.60 грн
91+4.59 грн
107+3.91 грн
250+3.15 грн
500+2.70 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
MMSZ4684T1G MMSZ4xxxT1G.PDF
MMSZ4684T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
на замовлення 3512 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.20 грн
84+5.01 грн
156+2.68 грн
500+1.88 грн
Мінімальне замовлення: 63
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FUSB302BMPX fusb302b-d.pdf
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps
Supply voltage: 2.8...5.5V
Interface: USB
USB speed: Full Speed
Data transfer rate: 5Gbps
Mounting: SMD
Kind of integrated circuit: transceiver
Operating temperature: -40...125°C
DC supply current: 25µA
Version: ESD
Type of integrated circuit: interface
Case: WQFN14
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FUSB302B01MPX fusb302b-d.pdf
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB
Supply voltage: 2.7...21V
Interface: I2C; USB
USB speed: Full Speed
Data transfer rate: 5Gbps
Mounting: SMD
Kind of integrated circuit: transceiver
Operating temperature: -40...85°C
Type of integrated circuit: interface
Case: WQFN14
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FUSB302B11MPX fusb302b-d.pdf
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps
Supply voltage: 2.85...5.5V
Interface: I2C; USB; USB 2.0
USB speed: Full Speed
Data transfer rate: 5Gbps
Mounting: SMD
Kind of integrated circuit: transceiver
Operating temperature: -40...85°C
Version: Standard; USB 2.0
Type of integrated circuit: interface
Case: WQFN14
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FUSB302BUCX fusb302b-d.pdf
Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; Full Speed; 2.7÷5.5VDC; WLCSP9
Supply voltage: 2.7...5.5V DC
USB speed: Full Speed
Mounting: SMD
Kind of integrated circuit: USB C controller
Operating temperature: -40...85°C
Type of integrated circuit: interface
Case: WLCSP9
Kind of package: reel; tape
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1N4003G 1N4001-D.PDF
1N4003G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 449 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
56+8.09 грн
68+6.18 грн
77+5.43 грн
100+4.19 грн
112+3.73 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
1N4003RLG 1N4001-D.PDF
1N4003RLG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
на замовлення 4420 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.19 грн
49+8.69 грн
100+5.50 грн
500+4.06 грн
1000+3.57 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
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