| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FQA11N90 | onsemi |
 Description: MOSFET N-CH 900V 11.4A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 960mOhm @ 5.7A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
товару немає в наявності |
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| FSES0765RGWDTU | onsemi |
Description: IC OFFLINE SW FLYBACK TO220-6L Packaging: Tube Package / Case: TO-220-6 Formed Leads Mounting Type: Through Hole Operating Temperature: -25°C ~ 85°C (TA) Duty Cycle: 55% Frequency - Switching: 20kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 20V Supplier Device Package: TO-220-6L (Forming) Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 12 V Control Features: Sync Part Status: Obsolete Power (Watts): 90 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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HGTG11N120CND | onsemi |
Description: IGBT NPT 1200V 43A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A Supplier Device Package: TO-247-3 IGBT Type: NPT Td (on/off) @ 25°C: 23ns/180ns Switching Energy: 950µJ (on), 1.3mJ (off) Test Condition: 960V, 11A, 10Ohm, 15V Gate Charge: 100 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 43 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 298 W |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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ISL9R30120G2 | onsemi |
Description: DIODE GEN PURP 1.2KV 30A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQA24N50F | onsemi |
Description: MOSFET N-CH 500V 24A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FIN3386MTDX | onsemi |
Description: IC SERIALIZER/DESERIAL 56TSSOP Packaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.240", 6.10mm Width) Output Type: LVTTL Mounting Type: Surface Mount Number of Outputs: 28 Function: Deserializer Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Data Rate: 2.38Gbps Input Type: LVDS Number of Inputs: 4 Supplier Device Package: 56-TSSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ISL9N302AP3 | onsemi |
Description: MOSFET N-CH 30V 75A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V Power Dissipation (Max): 345W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SGH30N60RUFDTU | onsemi |
Description: IGBT 600V 48A 235W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 30ns/54ns Switching Energy: 919µJ (on), 814µJ (off) Test Condition: 300V, 30A, 7Ohm, 15V Gate Charge: 85 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 235 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQA30N40 | onsemi |
Description: MOSFET N-CH 400V 30A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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FQA24N60 | onsemi |
Description: MOSFET N-CH 600V 23.5A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 11.8A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V |
на замовлення 78 шт: термін постачання 21-31 дні (днів) |
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MM74C244WM | onsemi |
Description: IC BUFFER NON-INVERT 15V 20SOIC Packaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 3V ~ 15V Number of Bits per Element: 4 Current - Output High, Low: 70mA, 70mA Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FGA25N120ANDTU | onsemi |
Description: IGBT NPT 1200V 40A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: TO-3P IGBT Type: NPT Td (on/off) @ 25°C: 60ns/170ns Switching Energy: 4.8mJ (on), 1mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 310 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FFAF60U60DNTU | onsemi |
Description: DIODE ARRAY GP 600V 60A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-3PF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQA44N30 | onsemi |
Description: MOSFET N-CH 300V 43.5A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 21.75A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQA55N25 | onsemi |
Description: MOSFET N-CH 250V 55A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 27.5A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQA140N10 | onsemi |
Description: MOSFET N-CH 100V 140A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
на замовлення 617 шт: термін постачання 21-31 дні (днів) |
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FIN1104MTCX | onsemi |
Description: IC REDRIVER LVDS 4CH 24TSSOP Packaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Delay Time: 1.75ns Number of Channels: 4 Mounting Type: Surface Mount Output: LVDS Type: Buffer, ReDriver Input: LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Applications: LVDS Current - Supply: 41mA Data Rate (Max): 800Mbps Supplier Device Package: 24-TSSOP Part Status: Active Capacitance - Input: 2.6 pF |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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FIN1104MTC | onsemi |
Description: IC REDRIVER LVDS 4CH 24TSSOP Packaging: Tube Package / Case: 24-TSSOP (0.173", 4.40mm Width) Delay Time: 1.75ns Number of Channels: 4 Mounting Type: Surface Mount Output: LVDS Type: Buffer, ReDriver Input: LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Applications: LVDS Current - Supply: 41mA Data Rate (Max): 800Mbps Supplier Device Package: 24-TSSOP Part Status: Active Capacitance - Input: 2.6 pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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RHRG75120 | onsemi |
Description: DIODE AVALANCHE 1200V 75A TO2472 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 75A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQA65N20 | onsemi |
Description: MOSFET N-CH 200V 65A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 32.5A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ISL9K3060G3 | onsemi |
Description: DIODE ARR AVAL 600V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Avalanche Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FIN1108MTDX | onsemi |
Description: IC REDRIVER LVDS 8CH 48TSSOP Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Delay Time: 1.75ns Number of Channels: 8 Mounting Type: Surface Mount Output: LVDS Type: Buffer, ReDriver Input: LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Applications: LVDS Current - Supply: 80mA (Max) Data Rate (Max): 800Mbps Supplier Device Package: 48-TSSOP Capacitance - Input: 3 pF |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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FIN1108MTD | onsemi |
Description: IC REDRIVER LVDS 8CH 48TSSOP Packaging: Tube Package / Case: 48-TFSOP (0.240", 6.10mm Width) Delay Time: 1.75ns Number of Channels: 8 Mounting Type: Surface Mount Output: LVDS Type: Buffer, ReDriver Input: LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Applications: LVDS Current - Supply: 80mA (Max) Data Rate (Max): 800Mbps Supplier Device Package: 48-TSSOP Capacitance - Input: 3 pF |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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| FS7M0680TU | onsemi |
Description: IC OFFLINE SW MULT TOP TO3P-5L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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FS7M0680YDTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO3P-5L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FIN1215MTDX | onsemi |
Description: IC SERIALIZER/DESERIAL 48TSSOP Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: LVDS Mounting Type: Surface Mount Number of Outputs: 3 Function: Serializer Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Data Rate: 1.785Gbps Input Type: LVTTL Number of Inputs: 21 Supplier Device Package: 48-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FIN1216MTD | onsemi |
Description: IC SERIALIZER/DESERIAL 48TSSOP Packaging: Tube Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: LVTTL Mounting Type: Surface Mount Number of Outputs: 21 Function: Deserializer Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Data Rate: 1.785Gbps Input Type: LVDS Number of Inputs: 3 Supplier Device Package: 48-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQH90N15 | onsemi |
Description: MOSFET N-CH 150V 90A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 45A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V |
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FMS6501MSA28 | onsemi |
Description: IC VIDEO SWITCH 12X9 28SSOP Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Function: Switch Matrix Voltage - Supply: 3.13V ~ 5.25V Applications: Consumer Video Supplier Device Package: 28-SSOP Part Status: Obsolete Control Interface: I2C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQA62N25C | onsemi |
Description: MOSFET N-CH 250V 62A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SGL50N60RUFTU | onsemi |
Description: IGBT 600V 80A TO-264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A Supplier Device Package: TO-264-3 Td (on/off) @ 25°C: 26ns/66ns Switching Energy: 1.68mJ (on), 1.03mJ (off) Test Condition: 300V, 50A, 5.9Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FFL20U120DNTU | onsemi |
Description: DIODE ARRAY GP 1200V 20A TO2643 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-264-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 20 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FFL60U60DNTU | onsemi |
Description: DIODE ARRAY GP 600V 60A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-264-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SGL60N90DG3TU | onsemi |
Description: IGBT TRENCH 900V 60A TO-264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.5 µs Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A Supplier Device Package: TO-264-3 IGBT Type: Trench Gate Charge: 260 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SGL60N90DG3YDTU | onsemi |
Description: IGBT TRENCH 900V 60A TO-264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.5 µs Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A Supplier Device Package: TO-264-3 IGBT Type: Trench Gate Charge: 260 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SGH80N60UFDTU | onsemi |
Description: IGBT 600V 80A 195W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 23ns/90ns Switching Energy: 570µJ (on), 590µJ (off) Test Condition: 300V, 40A, 5Ohm, 15V Gate Charge: 175 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 220 A Power - Max: 195 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
ML4812CP | onsemi |
Description: IC PFC CTRLR CRM 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: 0°C ~ 70°C Voltage - Supply: 12V ~ 18V Mode: Critical Conduction (CRM) Supplier Device Package: 16-PDIP Part Status: Obsolete Current - Startup: 800 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
HUFA75652G3 | onsemi |
Description: MOSFET N-CH 100V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 515W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FGA50N60LS | onsemi |
Description: IGBT 600V 100A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 54ns/146ns Switching Energy: 1.1mJ (on), 3.2mJ (off) Test Condition: 300V, 50A, 5.9Ohm, 15V Gate Charge: 167 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 240 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FGA25N120ANTU | onsemi |
Description: IGBT NPT 1200V 40A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: TO-3P IGBT Type: NPT Td (on/off) @ 25°C: 60ns/170ns Switching Energy: 4.8mJ (on), 1mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 310 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQA170N06 | onsemi |
Description: MOSFET N-CH 60V 170A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 85A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQA160N08 | onsemi |
Description: MOSFET N-CH 80V 160A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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HUF75652G3 | onsemi |
Description: MOSFET N-CH 100V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 515W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V |
на замовлення 188 шт: термін постачання 21-31 дні (днів) |
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FOD0738R2 | onsemi |
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
ML4821CSX | onsemi |
Description: IC PFC CTR AVER CURR 1MHZ 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 12V ~ 18V Frequency - Switching: 1MHz Mode: Average Current Supplier Device Package: 20-SOIC Part Status: Obsolete Current - Startup: 600 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
ML4824CS1 | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4824CS1X | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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HGTG18N120BND | onsemi |
Description: IGBT NPT 1200V 54A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A Supplier Device Package: TO-247-3 IGBT Type: NPT Td (on/off) @ 25°C: 23ns/170ns Switching Energy: 1.9mJ (on), 1.8mJ (off) Test Condition: 960V, 18A, 3Ohm, 15V Gate Charge: 165 nC Part Status: Obsolete Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 390 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
FJH1100_T50R | onsemi |
Description: DIODE GEN PURP 15V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 100 mA Current - Reverse Leakage @ Vr: 10 pA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FJH1102 | onsemi |
Description: DIODE STANDARD 25V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 pA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FJH1100 | onsemi |
Description: DIODE GEN PURP 15V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 100 mA Current - Reverse Leakage @ Vr: 10 pA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FGL60N100DTU | onsemi |
Description: IGBT TRENCH 1000V 60A TO-264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.5 µs Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-264-3 IGBT Type: Trench Gate Charge: 230 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 120 A Power - Max: 176 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MM74C922WM | onsemi |
Description: IC ENCODER 16-KEY 1 X 8:4 20SOIC Packaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:4 Type: 16-Key Encoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 15V Independent Circuits: 1 Current - Output High, Low: 15mA, 16mA Voltage Supply Source: Single Supply Supplier Device Package: 20-SOIC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MM74C922WMX | onsemi |
Description: IC ENCODER 16-KEY 1 X 8:4 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:4 Type: 16-Key Encoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 15V Independent Circuits: 1 Current - Output High, Low: 15mA, 16mA Voltage Supply Source: Single Supply Supplier Device Package: 20-SOIC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MM74C923WMX | onsemi |
Description: IC ENCODER 20-KEY 1 X 9:4 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 1 x 9:4 Type: 20-Key Encoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 15V Independent Circuits: 1 Current - Output High, Low: 15mA, 16mA Voltage Supply Source: Single Supply Supplier Device Package: 20-SOIC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4824IS1 | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4824CS2X | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4824IS1X | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4824CS2 | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
ML4812IQ | onsemi |
Description: IC PFC CTRLR CRM 20PLCC Packaging: Tube Package / Case: 20-LCC (J-Lead) Mounting Type: Surface Mount Voltage - Supply: 12V ~ 18V Mode: Critical Conduction (CRM) Supplier Device Package: 20-PLCC (9x9) Part Status: Obsolete Current - Startup: 800 µA |
товару немає в наявності |
В кошику од. на суму грн. |
| FQA11N90 |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 11.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 5.7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET N-CH 900V 11.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 5.7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FSES0765RGWDTU |
|
Виробник: onsemi
Description: IC OFFLINE SW FLYBACK TO220-6L
Packaging: Tube
Package / Case: TO-220-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 55%
Frequency - Switching: 20kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 20V
Supplier Device Package: TO-220-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Obsolete
Power (Watts): 90 W
Description: IC OFFLINE SW FLYBACK TO220-6L
Packaging: Tube
Package / Case: TO-220-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 55%
Frequency - Switching: 20kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 20V
Supplier Device Package: TO-220-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Obsolete
Power (Watts): 90 W
товару немає в наявності
В кошику
од. на суму грн.
| HGTG11N120CND |
|
Виробник: onsemi
Description: IGBT NPT 1200V 43A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/180ns
Switching Energy: 950µJ (on), 1.3mJ (off)
Test Condition: 960V, 11A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Description: IGBT NPT 1200V 43A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/180ns
Switching Energy: 950µJ (on), 1.3mJ (off)
Test Condition: 960V, 11A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 454.35 грн |
| ISL9R30120G2 |
|
Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| FQA24N50F |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FIN3386MTDX |
|
Виробник: onsemi
Description: IC SERIALIZER/DESERIAL 56TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: LVTTL
Mounting Type: Surface Mount
Number of Outputs: 28
Function: Deserializer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Data Rate: 2.38Gbps
Input Type: LVDS
Number of Inputs: 4
Supplier Device Package: 56-TSSOP
Description: IC SERIALIZER/DESERIAL 56TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: LVTTL
Mounting Type: Surface Mount
Number of Outputs: 28
Function: Deserializer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Data Rate: 2.38Gbps
Input Type: LVDS
Number of Inputs: 4
Supplier Device Package: 56-TSSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 201.03 грн |
| 2000+ | 189.26 грн |
| ISL9N302AP3 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V
Power Dissipation (Max): 345W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 15 V
Description: MOSFET N-CH 30V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V
Power Dissipation (Max): 345W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 15 V
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| SGH30N60RUFDTU |
|
Виробник: onsemi
Description: IGBT 600V 48A 235W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 30ns/54ns
Switching Energy: 919µJ (on), 814µJ (off)
Test Condition: 300V, 30A, 7Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 235 W
Description: IGBT 600V 48A 235W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 30ns/54ns
Switching Energy: 919µJ (on), 814µJ (off)
Test Condition: 300V, 30A, 7Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 235 W
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| FQA30N40 |
|
Виробник: onsemi
Description: MOSFET N-CH 400V 30A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Description: MOSFET N-CH 400V 30A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 503.91 грн |
| FQA24N60 |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 23.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11.8A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Description: MOSFET N-CH 600V 23.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11.8A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
на замовлення 78 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 496.48 грн |
| 30+ | 329.92 грн |
| MM74C244WM |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 15V 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 15V
Number of Bits per Element: 4
Current - Output High, Low: 70mA, 70mA
Supplier Device Package: 20-SOIC
Description: IC BUFFER NON-INVERT 15V 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 15V
Number of Bits per Element: 4
Current - Output High, Low: 70mA, 70mA
Supplier Device Package: 20-SOIC
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| FGA25N120ANDTU |
|
Виробник: onsemi
Description: IGBT NPT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
Description: IGBT NPT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
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| FFAF60U60DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 60A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE ARRAY GP 600V 60A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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| FQA44N30 |
|
Виробник: onsemi
Description: MOSFET N-CH 300V 43.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 21.75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Description: MOSFET N-CH 300V 43.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 21.75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
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| FQA55N25 |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 55A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 27.5A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Description: MOSFET N-CH 250V 55A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 27.5A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
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| FQA140N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
на замовлення 617 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 518.78 грн |
| 30+ | 293.91 грн |
| 120+ | 272.73 грн |
| 510+ | 237.09 грн |
| FIN1104MTCX |
|
Виробник: onsemi
Description: IC REDRIVER LVDS 4CH 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Delay Time: 1.75ns
Number of Channels: 4
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 41mA
Data Rate (Max): 800Mbps
Supplier Device Package: 24-TSSOP
Part Status: Active
Capacitance - Input: 2.6 pF
Description: IC REDRIVER LVDS 4CH 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Delay Time: 1.75ns
Number of Channels: 4
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 41mA
Data Rate (Max): 800Mbps
Supplier Device Package: 24-TSSOP
Part Status: Active
Capacitance - Input: 2.6 pF
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 106.83 грн |
| 5000+ | 100.83 грн |
| FIN1104MTC |
|
Виробник: onsemi
Description: IC REDRIVER LVDS 4CH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Delay Time: 1.75ns
Number of Channels: 4
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 41mA
Data Rate (Max): 800Mbps
Supplier Device Package: 24-TSSOP
Part Status: Active
Capacitance - Input: 2.6 pF
Description: IC REDRIVER LVDS 4CH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Delay Time: 1.75ns
Number of Channels: 4
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 41mA
Data Rate (Max): 800Mbps
Supplier Device Package: 24-TSSOP
Part Status: Active
Capacitance - Input: 2.6 pF
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| RHRG75120 |
|
Виробник: onsemi
Description: DIODE AVALANCHE 1200V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE AVALANCHE 1200V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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| FQA65N20 |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 65A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 32.5A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 200V 65A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 32.5A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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| ISL9K3060G3 |
|
Виробник: onsemi
Description: DIODE ARR AVAL 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE ARR AVAL 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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| FIN1108MTDX |
|
Виробник: onsemi
Description: IC REDRIVER LVDS 8CH 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Delay Time: 1.75ns
Number of Channels: 8
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 80mA (Max)
Data Rate (Max): 800Mbps
Supplier Device Package: 48-TSSOP
Capacitance - Input: 3 pF
Description: IC REDRIVER LVDS 8CH 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Delay Time: 1.75ns
Number of Channels: 8
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 80mA (Max)
Data Rate (Max): 800Mbps
Supplier Device Package: 48-TSSOP
Capacitance - Input: 3 pF
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 187.61 грн |
| 2000+ | 176.58 грн |
| 3000+ | 174.54 грн |
| FIN1108MTD |
|
Виробник: onsemi
Description: IC REDRIVER LVDS 8CH 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Delay Time: 1.75ns
Number of Channels: 8
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 80mA (Max)
Data Rate (Max): 800Mbps
Supplier Device Package: 48-TSSOP
Capacitance - Input: 3 pF
Description: IC REDRIVER LVDS 8CH 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Delay Time: 1.75ns
Number of Channels: 8
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 80mA (Max)
Data Rate (Max): 800Mbps
Supplier Device Package: 48-TSSOP
Capacitance - Input: 3 pF
на замовлення 60 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 575.78 грн |
| 10+ | 369.03 грн |
| 38+ | 302.27 грн |
| FS7M0680TU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO3P-5L
Description: IC OFFLINE SW MULT TOP TO3P-5L
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| FS7M0680YDTU |
|
Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO3P-5L
Description: IC OFFLINE SW MULT TOP TO3P-5L
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| FIN1215MTDX |
|
Виробник: onsemi
Description: IC SERIALIZER/DESERIAL 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: LVDS
Mounting Type: Surface Mount
Number of Outputs: 3
Function: Serializer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Data Rate: 1.785Gbps
Input Type: LVTTL
Number of Inputs: 21
Supplier Device Package: 48-TSSOP
Description: IC SERIALIZER/DESERIAL 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: LVDS
Mounting Type: Surface Mount
Number of Outputs: 3
Function: Serializer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Data Rate: 1.785Gbps
Input Type: LVTTL
Number of Inputs: 21
Supplier Device Package: 48-TSSOP
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| FIN1216MTD |
|
Виробник: onsemi
Description: IC SERIALIZER/DESERIAL 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: LVTTL
Mounting Type: Surface Mount
Number of Outputs: 21
Function: Deserializer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Data Rate: 1.785Gbps
Input Type: LVDS
Number of Inputs: 3
Supplier Device Package: 48-TSSOP
Description: IC SERIALIZER/DESERIAL 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: LVTTL
Mounting Type: Surface Mount
Number of Outputs: 21
Function: Deserializer
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Data Rate: 1.785Gbps
Input Type: LVDS
Number of Inputs: 3
Supplier Device Package: 48-TSSOP
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| FQH90N15 |
Виробник: onsemi
Description: MOSFET N-CH 150V 90A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 45A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Description: MOSFET N-CH 150V 90A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 45A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
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| FMS6501MSA28 |
|
Виробник: onsemi
Description: IC VIDEO SWITCH 12X9 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Switch Matrix
Voltage - Supply: 3.13V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Control Interface: I2C
Description: IC VIDEO SWITCH 12X9 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Switch Matrix
Voltage - Supply: 3.13V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Control Interface: I2C
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| FQA62N25C |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 62A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
Description: MOSFET N-CH 250V 62A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
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| SGL50N60RUFTU |
|
Виробник: onsemi
Description: IGBT 600V 80A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
Supplier Device Package: TO-264-3
Td (on/off) @ 25°C: 26ns/66ns
Switching Energy: 1.68mJ (on), 1.03mJ (off)
Test Condition: 300V, 50A, 5.9Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Description: IGBT 600V 80A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
Supplier Device Package: TO-264-3
Td (on/off) @ 25°C: 26ns/66ns
Switching Energy: 1.68mJ (on), 1.03mJ (off)
Test Condition: 300V, 50A, 5.9Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
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| FFL20U120DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 1200V 20A TO2643
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-264-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 20A TO2643
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-264-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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| FFL60U60DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE ARRAY GP 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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| SGL60N90DG3TU |
|
Виробник: onsemi
Description: IGBT TRENCH 900V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 260 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Description: IGBT TRENCH 900V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 260 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
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| SGL60N90DG3YDTU |
|
Виробник: onsemi
Description: IGBT TRENCH 900V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 260 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Description: IGBT TRENCH 900V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 260 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
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| SGH80N60UFDTU |
|
Виробник: onsemi
Description: IGBT 600V 80A 195W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 23ns/90ns
Switching Energy: 570µJ (on), 590µJ (off)
Test Condition: 300V, 40A, 5Ohm, 15V
Gate Charge: 175 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 195 W
Description: IGBT 600V 80A 195W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 23ns/90ns
Switching Energy: 570µJ (on), 590µJ (off)
Test Condition: 300V, 40A, 5Ohm, 15V
Gate Charge: 175 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 195 W
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| ML4812CP |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 12V ~ 18V
Mode: Critical Conduction (CRM)
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Current - Startup: 800 µA
Description: IC PFC CTRLR CRM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 12V ~ 18V
Mode: Critical Conduction (CRM)
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Current - Startup: 800 µA
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| HUFA75652G3 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 515W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 515W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V
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| FGA50N60LS |
|
Виробник: onsemi
Description: IGBT 600V 100A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 54ns/146ns
Switching Energy: 1.1mJ (on), 3.2mJ (off)
Test Condition: 300V, 50A, 5.9Ohm, 15V
Gate Charge: 167 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 240 W
Description: IGBT 600V 100A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 54ns/146ns
Switching Energy: 1.1mJ (on), 3.2mJ (off)
Test Condition: 300V, 50A, 5.9Ohm, 15V
Gate Charge: 167 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 240 W
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| FGA25N120ANTU |
|
Виробник: onsemi
Description: IGBT NPT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
Description: IGBT NPT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
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| FQA170N06 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 170A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 85A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 25 V
Description: MOSFET N-CH 60V 170A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 85A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 25 V
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| FQA160N08 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 160A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 80V 160A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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| HUF75652G3 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 515W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 515W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 788.92 грн |
| 30+ | 451.84 грн |
| 120+ | 384.36 грн |
| FOD0738R2 |
|
Виробник: onsemi
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
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| ML4821CSX |
|
Виробник: onsemi
Description: IC PFC CTR AVER CURR 1MHZ 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 12V ~ 18V
Frequency - Switching: 1MHz
Mode: Average Current
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Current - Startup: 600 µA
Description: IC PFC CTR AVER CURR 1MHZ 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 12V ~ 18V
Frequency - Switching: 1MHz
Mode: Average Current
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Current - Startup: 600 µA
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| ML4824CS1 |
|
Виробник: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
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| ML4824CS1X |
|
Виробник: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
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| HGTG18N120BND |
|
Виробник: onsemi
Description: IGBT NPT 1200V 54A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 1.9mJ (on), 1.8mJ (off)
Test Condition: 960V, 18A, 3Ohm, 15V
Gate Charge: 165 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 390 W
Description: IGBT NPT 1200V 54A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 1.9mJ (on), 1.8mJ (off)
Test Condition: 960V, 18A, 3Ohm, 15V
Gate Charge: 165 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 390 W
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| FJH1100_T50R |
|
Виробник: onsemi
Description: DIODE GEN PURP 15V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 pA @ 15 V
Description: DIODE GEN PURP 15V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 pA @ 15 V
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| FJH1102 |
|
Виробник: onsemi
Description: DIODE STANDARD 25V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 pA @ 25 V
Description: DIODE STANDARD 25V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 pA @ 25 V
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| FJH1100 |
|
Виробник: onsemi
Description: DIODE GEN PURP 15V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 pA @ 15 V
Description: DIODE GEN PURP 15V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 pA @ 15 V
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| FGL60N100DTU |
|
Виробник: onsemi
Description: IGBT TRENCH 1000V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 176 W
Description: IGBT TRENCH 1000V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 176 W
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| MM74C922WM |
|
Виробник: onsemi
Description: IC ENCODER 16-KEY 1 X 8:4 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:4
Type: 16-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Description: IC ENCODER 16-KEY 1 X 8:4 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:4
Type: 16-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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| MM74C922WMX |
|
Виробник: onsemi
Description: IC ENCODER 16-KEY 1 X 8:4 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:4
Type: 16-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Description: IC ENCODER 16-KEY 1 X 8:4 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:4
Type: 16-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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| MM74C923WMX |
|
Виробник: onsemi
Description: IC ENCODER 20-KEY 1 X 9:4 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 9:4
Type: 20-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Description: IC ENCODER 20-KEY 1 X 9:4 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 9:4
Type: 20-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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| ML4824IS1 |
|
Виробник: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
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| ML4824CS2X |
|
Виробник: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
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| ML4824IS1X |
|
Виробник: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
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| ML4824CS2 |
|
Виробник: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
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| ML4812IQ |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM 20PLCC
Packaging: Tube
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Voltage - Supply: 12V ~ 18V
Mode: Critical Conduction (CRM)
Supplier Device Package: 20-PLCC (9x9)
Part Status: Obsolete
Current - Startup: 800 µA
Description: IC PFC CTRLR CRM 20PLCC
Packaging: Tube
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Voltage - Supply: 12V ~ 18V
Mode: Critical Conduction (CRM)
Supplier Device Package: 20-PLCC (9x9)
Part Status: Obsolete
Current - Startup: 800 µA
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