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H11N3TM H11N3TM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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GBPC1501 GBPC1501 onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1PHASE 100V 15A GBPC
на замовлення 7552 шт:
термін постачання 21-31 дні (днів)
1+456.79 грн
10+395.35 грн
100+323.91 грн
500+258.77 грн
1000+218.24 грн
2000+207.33 грн
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GBPC1510 GBPC1510 onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 151 шт:
термін постачання 21-31 дні (днів)
1+456.79 грн
50+232.29 грн
100+212.24 грн
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GBPC1508 GBPC1508 onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1PHASE 800V 15A GBPC
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+412.23 грн
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FQA7N90M FQA7N90M onsemi FQA7N90M.pdf Description: MOSFET N-CH 900V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 3.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
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GBPC1502 GBPC1502 onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1PHASE 200V 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FQPF17N40 FQPF17N40 onsemi fqpf17n40-d.pdf Description: MOSFET N-CH 400V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.75A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
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FQAF17N40 FQAF17N40 onsemi FQAF17N40.pdf Description: MOSFET N-CH 400V 12.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 6.1A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
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FSDM0465RBWDTU FSDM0465RBWDTU onsemi fsdm0465rb-d.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 82%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 56 W
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HSR412SR2 onsemi HSR312%28L%29%2C412%28L%29_DS.pdf Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 80°C
Termination Style: Gull Wing
Load Current: 140 mA
Approval Agency: CSA, UL
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
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FJAF6910TU FJAF6910TU onsemi FJAF6910.pdf Description: TRANS NPN 800V 10A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 7 @ 6A, 5V
Supplier Device Package: TO-3PF
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 60 W
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HSR312S onsemi HSR312(L),412(L)_DS.pdf Description: SSR RELAY SPST-NO 190MA 0-250V
Packaging: Bulk
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 190 mA
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
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HSR312 HSR312 onsemi HSR312(L),412(L)_DS.pdf Description: SSR RELAY SPST-NO 190MA 0-250V
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 190 mA
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
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FQA8N100C FQA8N100C onsemi fqa8n100c-d.pdf Description: MOSFET N-CH 1000V 8A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
на замовлення 495 шт:
термін постачання 21-31 дні (днів)
1+323.10 грн
30+219.10 грн
120+198.98 грн
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HSR312LS onsemi HSR312(L),412(L)_DS.pdf Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Bulk
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
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HSR312L HSR312L onsemi HSR312(L),412(L)_DS.pdf Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 170 mA
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
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SGF23N60UFDM1TU SGF23N60UFDM1TU onsemi SGF23N60UFD.pdf Description: IGBT 600V 23A 75W TO3PF
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GBPC2502 GBPC2502 onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1PHASE 200V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2730 шт:
термін постачання 21-31 дні (днів)
1+441.67 грн
50+213.70 грн
100+204.40 грн
500+159.90 грн
1000+153.77 грн
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ISL9R18120S3ST ISL9R18120S3ST onsemi isl9r18120s3s-d.pdf Description: DIODE GEN PURP 1.2KV 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 18 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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FIN1049MTCX FIN1049MTCX onsemi ONSM-S-A0003587535-1.pdf?t.download=true&u=5oefqw Description: IC TRANSCEIVER FULL 2/2 16TSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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FQP90N08 FQP90N08 onsemi FQP90N08.pdf Description: MOSFET N-CH 80V 71A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 35.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
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HSR412L HSR412L onsemi HSR312%28L%29%2C412%28L%29_DS.pdf Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 80°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: CSA, UL
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
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HSR312SR2 onsemi HSR312(L),412(L)_DS.pdf Description: SSR RELAY SPST-NO 190MA 0-250V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 190 mA
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
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HSR412LS onsemi HSR312%28L%29%2C412%28L%29_DS.pdf Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Bulk
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 80°C
Termination Style: Gull Wing
Load Current: 120 mA
Approval Agency: CSA, UL
Supplier Device Package: 6-SMD
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
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HSR312LSR2 onsemi HSR312(L),412(L)_DS.pdf Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
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HSR412 HSR412 onsemi HSR312%28L%29%2C412%28L%29_DS.pdf Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 80°C
Termination Style: PC Pin
Load Current: 140 mA
Approval Agency: CSA, UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
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HUFA75639G3 HUFA75639G3 onsemi Description: MOSFET N-CH 100V 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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H11N2VM H11N2VM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2FVM H11N2FVM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2SR2VM H11N2SR2VM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2SR2M H11N2SR2M onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2TVM H11N2TVM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2SVM H11N2SVM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2M H11N2M onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2SM H11N2SM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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MM74C906MX MM74C906MX onsemi MM74C906%2C907.pdf Description: IC BUFFER NON-INVERT 15V 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 15V
Number of Bits per Element: 1
Supplier Device Package: 14-SOIC
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ISL9R1560S3ST ISL9R1560S3ST onsemi Description: DIODE GEN PURP 600V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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GBPC3501 GBPC3501 onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1PHASE 100V 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 197 шт:
термін постачання 21-31 дні (днів)
1+414.62 грн
50+316.17 грн
100+271.01 грн
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GBPC3502 GBPC3502 onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1PHASE 200V 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 143 шт:
термін постачання 21-31 дні (днів)
1+549.11 грн
50+271.56 грн
100+256.45 грн
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GBPC35005 GBPC35005 onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1PHASE 50V 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 215 шт:
термін постачання 21-31 дні (днів)
1+435.31 грн
10+376.65 грн
100+308.61 грн
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FQA70N10 FQA70N10 onsemi fqa70n10-d.pdf Description: MOSFET N-CH 100V 70A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 1193 шт:
термін постачання 21-31 дні (днів)
3+155.98 грн
30+108.16 грн
120+100.22 грн
510+93.82 грн
1020+88.72 грн
Мінімальне замовлення: 3
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HCPL0601R1V HCPL0601R1V onsemi HCPL0600%2C01%2C11%2C0637%2C38%2C39.pdf Description: OPTOISO 3.75KV OPN COLL 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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HCPL0600R2V HCPL0600R2V onsemi HCPL0600%2C01%2C11%2C0637%2C38%2C39.pdf Description: OPTOISO 3.75KV OPN COLL 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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HCPL0600R1V HCPL0600R1V onsemi HCPL0600,01,11,0637,38,39.pdf Description: OPTOISO 3.75KV OPN COLLECTOR 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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HCPL0601R2V HCPL0601R2V onsemi ONSM-S-A0003590047-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 3.75KV OPN COLL 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
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HSR412LSR2 onsemi HSR312%28L%29%2C412%28L%29_DS.pdf Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 80°C
Termination Style: Gull Wing
Load Current: 120 mA
Approval Agency: CSA, UL
Supplier Device Package: 6-SMD
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
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HUF75639G3 HUF75639G3 onsemi huf75639g3-d.pdf Description: MOSFET N-CH 100V 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 205 шт:
термін постачання 21-31 дні (днів)
2+250.68 грн
30+190.84 грн
120+163.57 грн
Мінімальне замовлення: 2
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HUF75343G3 HUF75343G3 onsemi HUF75343P3.pdf Description: MOSFET N-CH 55V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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FMS6410BCS FMS6410BCS onsemi FMS6410B.pdf Description: IC VIDEO FILTER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Standards: PAL
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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FSCM0565RGWDTU FSCM0565RGWDTU onsemi FSCM0565R.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 85 W
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FQA13N50 FQA13N50 onsemi FQA13N50.pdf Description: MOSFET N-CH 500V 13.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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HUFA75339G3 HUFA75339G3 onsemi HUFA75339(G3,P3,S3S).pdf Description: MOSFET N-CH 55V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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FQA9N90C FQA9N90C onsemi FQA9N90C.pdf Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
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HGTP5N120BND HGTP5N120BND onsemi hgtp5n120bnd-d.pdf Description: IGBT NPT 1200V 21A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 450µJ (on), 390µJ (off)
Test Condition: 960V, 5A, 25Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 167 W
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FIN1048MTCX FIN1048MTCX onsemi ONSM-S-A0003589267-1.pdf?t.download=true&u=5oefqw Description: IC TRANSCEIVER 0/4 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/4
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-TSSOP
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FQA85N06 FQA85N06 onsemi FQA85N06.pdf Description: MOSFET N-CH 60V 100A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
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HUFA76443P3 HUFA76443P3 onsemi HUF76443P3,%20HUF76443S3S.pdf Description: MOSFET N-CH 60V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4115 pF @ 25 V
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FSCM0765RGWDTU FSCM0765RGWDTU onsemi FSCM0765R.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 95 W
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FFPF60SA60DSTU FFPF60SA60DSTU onsemi FFPF60SA60DS_Rev_1.1.pdf Description: DIODE ARR AVAL 600V 8A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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HUF75345S3S HUF75345S3S onsemi huf75345s3s-d.pdf Description: MOSFET N-CH 55V 75A D2PAK
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H11N3TM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N3TM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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GBPC1501 gbpc3510-d.pdf
GBPC1501
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 100V 15A GBPC
на замовлення 7552 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+456.79 грн
10+395.35 грн
100+323.91 грн
500+258.77 грн
1000+218.24 грн
2000+207.33 грн
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GBPC1510 gbpc3510-d.pdf
GBPC1510
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 151 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+456.79 грн
50+232.29 грн
100+212.24 грн
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GBPC1508 gbpc3510-d.pdf
GBPC1508
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 800V 15A GBPC
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+412.23 грн
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FQA7N90M FQA7N90M.pdf
FQA7N90M
Виробник: onsemi
Description: MOSFET N-CH 900V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 3.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
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GBPC1502 gbpc3510-d.pdf
GBPC1502
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 200V 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FQPF17N40 fqpf17n40-d.pdf
FQPF17N40
Виробник: onsemi
Description: MOSFET N-CH 400V 9.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.75A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
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FQAF17N40 FQAF17N40.pdf
FQAF17N40
Виробник: onsemi
Description: MOSFET N-CH 400V 12.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 6.1A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
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FSDM0465RBWDTU fsdm0465rb-d.pdf
FSDM0465RBWDTU
Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 82%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 56 W
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HSR412SR2 HSR312%28L%29%2C412%28L%29_DS.pdf
Виробник: onsemi
Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 80°C
Termination Style: Gull Wing
Load Current: 140 mA
Approval Agency: CSA, UL
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
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FJAF6910TU FJAF6910.pdf
FJAF6910TU
Виробник: onsemi
Description: TRANS NPN 800V 10A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 7 @ 6A, 5V
Supplier Device Package: TO-3PF
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 60 W
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HSR312S HSR312(L),412(L)_DS.pdf
Виробник: onsemi
Description: SSR RELAY SPST-NO 190MA 0-250V
Packaging: Bulk
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 190 mA
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
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HSR312 HSR312(L),412(L)_DS.pdf
HSR312
Виробник: onsemi
Description: SSR RELAY SPST-NO 190MA 0-250V
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 190 mA
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
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FQA8N100C fqa8n100c-d.pdf
FQA8N100C
Виробник: onsemi
Description: MOSFET N-CH 1000V 8A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
на замовлення 495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+323.10 грн
30+219.10 грн
120+198.98 грн
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HSR312LS HSR312(L),412(L)_DS.pdf
Виробник: onsemi
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Bulk
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
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HSR312L HSR312(L),412(L)_DS.pdf
HSR312L
Виробник: onsemi
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 170 mA
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
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SGF23N60UFDM1TU SGF23N60UFD.pdf
SGF23N60UFDM1TU
Виробник: onsemi
Description: IGBT 600V 23A 75W TO3PF
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GBPC2502 gbpc3510-d.pdf
GBPC2502
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 200V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2730 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+441.67 грн
50+213.70 грн
100+204.40 грн
500+159.90 грн
1000+153.77 грн
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ISL9R18120S3ST isl9r18120s3s-d.pdf
ISL9R18120S3ST
Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 18 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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FIN1049MTCX ONSM-S-A0003587535-1.pdf?t.download=true&u=5oefqw
FIN1049MTCX
Виробник: onsemi
Description: IC TRANSCEIVER FULL 2/2 16TSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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FQP90N08 FQP90N08.pdf
FQP90N08
Виробник: onsemi
Description: MOSFET N-CH 80V 71A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 35.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
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HSR412L HSR312%28L%29%2C412%28L%29_DS.pdf
HSR412L
Виробник: onsemi
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 80°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: CSA, UL
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
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HSR312SR2 HSR312(L),412(L)_DS.pdf
Виробник: onsemi
Description: SSR RELAY SPST-NO 190MA 0-250V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 190 mA
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
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HSR412LS HSR312%28L%29%2C412%28L%29_DS.pdf
Виробник: onsemi
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Bulk
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 80°C
Termination Style: Gull Wing
Load Current: 120 mA
Approval Agency: CSA, UL
Supplier Device Package: 6-SMD
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
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HSR312LSR2 HSR312(L),412(L)_DS.pdf
Виробник: onsemi
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
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HSR412 HSR312%28L%29%2C412%28L%29_DS.pdf
HSR412
Виробник: onsemi
Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 80°C
Termination Style: PC Pin
Load Current: 140 mA
Approval Agency: CSA, UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
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HUFA75639G3
HUFA75639G3
Виробник: onsemi
Description: MOSFET N-CH 100V 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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H11N2VM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N2VM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2FVM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N2FVM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2SR2VM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N2SR2VM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2SR2M ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N2SR2M
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2TVM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N2TVM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2SVM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N2SVM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2M ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N2M
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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H11N2SM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N2SM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 15V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 5MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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MM74C906MX MM74C906%2C907.pdf
MM74C906MX
Виробник: onsemi
Description: IC BUFFER NON-INVERT 15V 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 15V
Number of Bits per Element: 1
Supplier Device Package: 14-SOIC
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ISL9R1560S3ST
ISL9R1560S3ST
Виробник: onsemi
Description: DIODE GEN PURP 600V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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GBPC3501 gbpc3510-d.pdf
GBPC3501
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 100V 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 197 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+414.62 грн
50+316.17 грн
100+271.01 грн
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GBPC3502 gbpc3510-d.pdf
GBPC3502
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 200V 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 143 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+549.11 грн
50+271.56 грн
100+256.45 грн
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GBPC35005 gbpc3510-d.pdf
GBPC35005
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 50V 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 215 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+435.31 грн
10+376.65 грн
100+308.61 грн
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FQA70N10 fqa70n10-d.pdf
FQA70N10
Виробник: onsemi
Description: MOSFET N-CH 100V 70A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 1193 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+155.98 грн
30+108.16 грн
120+100.22 грн
510+93.82 грн
1020+88.72 грн
Мінімальне замовлення: 3
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HCPL0601R1V HCPL0600%2C01%2C11%2C0637%2C38%2C39.pdf
HCPL0601R1V
Виробник: onsemi
Description: OPTOISO 3.75KV OPN COLL 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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HCPL0600R2V HCPL0600%2C01%2C11%2C0637%2C38%2C39.pdf
HCPL0600R2V
Виробник: onsemi
Description: OPTOISO 3.75KV OPN COLL 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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HCPL0600R1V HCPL0600,01,11,0637,38,39.pdf
HCPL0600R1V
Виробник: onsemi
Description: OPTOISO 3.75KV OPN COLLECTOR 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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HCPL0601R2V ONSM-S-A0003590047-1.pdf?t.download=true&u=5oefqw
HCPL0601R2V
Виробник: onsemi
Description: OPTOISO 3.75KV OPN COLL 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
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HSR412LSR2 HSR312%28L%29%2C412%28L%29_DS.pdf
Виробник: onsemi
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.6VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 80°C
Termination Style: Gull Wing
Load Current: 120 mA
Approval Agency: CSA, UL
Supplier Device Package: 6-SMD
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
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HUF75639G3 huf75639g3-d.pdf
HUF75639G3
Виробник: onsemi
Description: MOSFET N-CH 100V 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 205 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+250.68 грн
30+190.84 грн
120+163.57 грн
Мінімальне замовлення: 2
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HUF75343G3 HUF75343P3.pdf
HUF75343G3
Виробник: onsemi
Description: MOSFET N-CH 55V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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FMS6410BCS FMS6410B.pdf
FMS6410BCS
Виробник: onsemi
Description: IC VIDEO FILTER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Standards: PAL
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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FSCM0565RGWDTU FSCM0565R.pdf
FSCM0565RGWDTU
Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 85 W
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FQA13N50 FQA13N50.pdf
FQA13N50
Виробник: onsemi
Description: MOSFET N-CH 500V 13.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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HUFA75339G3 HUFA75339(G3,P3,S3S).pdf
HUFA75339G3
Виробник: onsemi
Description: MOSFET N-CH 55V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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FQA9N90C FQA9N90C.pdf
FQA9N90C
Виробник: onsemi
Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
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HGTP5N120BND hgtp5n120bnd-d.pdf
HGTP5N120BND
Виробник: onsemi
Description: IGBT NPT 1200V 21A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 450µJ (on), 390µJ (off)
Test Condition: 960V, 5A, 25Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 167 W
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FIN1048MTCX ONSM-S-A0003589267-1.pdf?t.download=true&u=5oefqw
FIN1048MTCX
Виробник: onsemi
Description: IC TRANSCEIVER 0/4 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/4
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-TSSOP
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FQA85N06 FQA85N06.pdf
FQA85N06
Виробник: onsemi
Description: MOSFET N-CH 60V 100A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
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HUFA76443P3 HUF76443P3,%20HUF76443S3S.pdf
HUFA76443P3
Виробник: onsemi
Description: MOSFET N-CH 60V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4115 pF @ 25 V
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FSCM0765RGWDTU FSCM0765R.pdf
FSCM0765RGWDTU
Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 95 W
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FFPF60SA60DSTU FFPF60SA60DS_Rev_1.1.pdf
FFPF60SA60DSTU
Виробник: onsemi
Description: DIODE ARR AVAL 600V 8A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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HUF75345S3S huf75345s3s-d.pdf
HUF75345S3S
Виробник: onsemi
Description: MOSFET N-CH 55V 75A D2PAK
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