| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MC10ELT28DG | onsemi |
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Differential, Single-Ended Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-SOIC Channel Type: Unidirectional Output Signal: TTL, PECL Translator Type: Mixed Signal Channels per Circuit: 2 Input Signal: PECL, TTL Number of Circuits: 1 |
на замовлення 1465 шт: термін постачання 21-31 дні (днів) |
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EGP10K | onsemi |
Description: DIODE STANDARD 800V 1A DO41Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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EGP10K | onsemi |
Description: DIODE STANDARD 800V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 18661 шт: термін постачання 21-31 дні (днів) |
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FFSB0665B-F085 | onsemi |
Description: DIODE SIL CARB 650V 8A D2PAK-2Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263 (D2Pak) Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 259pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
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FFSB0665B-F085 | onsemi |
Description: DIODE SIL CARB 650V 8A D2PAK-2Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263 (D2Pak) Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 259pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 7944 шт: термін постачання 21-31 дні (днів) |
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FFSB0665B | onsemi |
Description: DIODE SIL CARB 650V 8A D2PAK-2Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263 (D2Pak) Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 259pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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FFSB0665B | onsemi |
Description: DIODE SIL CARB 650V 8A D2PAK-2Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263 (D2Pak) Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 259pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 712 шт: термін постачання 21-31 дні (днів) |
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MC74HC1G08DFT1 | onsemi |
Description: IC GATE AND 1CH 2-INP SC88ACurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Input Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Number of Inputs: 2 Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 2V ~ 6V Operating Temperature: -55°C ~ 125°C Logic Type: AND Gate Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Bulk |
на замовлення 83960 шт: термін постачання 21-31 дні (днів) |
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MC74HC1G08DBVT1G-Q | onsemi |
Description: SINGLE 2-INPUT AND GATENumber of Circuits: 1 Grade: Automotive Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Input Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: SC-74A Number of Inputs: 2 Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 2V ~ 6V Operating Temperature: -55°C ~ 125°C Logic Type: AND Gate Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Current - Quiescent (Max): 1 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MC74HC1G08DBVT1G-Q | onsemi |
Description: SINGLE 2-INPUT AND GATEQualification: AEC-Q100 Current - Quiescent (Max): 1 µA Number of Circuits: 1 Grade: Automotive Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Input Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: SC-74A Number of Inputs: 2 Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 2V ~ 6V Operating Temperature: -55°C ~ 125°C Logic Type: AND Gate Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 5750 шт: термін постачання 21-31 дні (днів) |
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NS3L500MTTWG | onsemi |
Description: IC ETH LAN SW 2:1GB 8CH 56-WQFNFeatures: 10/100/1000 Base-T, LAN, LED Packaging: Bulk Package / Case: 56-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Networking On-State Resistance (Max): 7Ohm -3db Bandwidth: 800MHz Supplier Device Package: 56-WQFN (5x11) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 8 |
на замовлення 431751 шт: термін постачання 21-31 дні (днів) |
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NRVHP160SFT3G | onsemi |
Description: DIODE STANDARD 600V 1A SOD123FLQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NRVHP160SFT3G | onsemi |
Description: DIODE STANDARD 600V 1A SOD123FLCurrent - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SOD-123FL |
на замовлення 951 шт: термін постачання 21-31 дні (днів) |
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NRVB140ESFT3G | onsemi |
Description: DIODE SCHOTTKY 40V 1A SOD123FLPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Current - Reverse Leakage @ Vr: 30 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NRVB140ESFT3G | onsemi |
Description: DIODE SCHOTTKY 40V 1A SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Current - Reverse Leakage @ Vr: 30 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 3476 шт: термін постачання 21-31 дні (днів) |
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NRVB140SFT3G | onsemi |
Description: DIODE SCHOTTKY 40V 1A SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4752A | onsemi |
Description: DIODE ZENER 33V 1W DO41Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V |
на замовлення 67347 шт: термін постачання 21-31 дні (днів) |
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MMSZ5V1T3G | onsemi |
Description: DIODE ZENER 5.1V 500MW SOD123Tolerance: ±5% Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
на замовлення 539500 шт: термін постачання 21-31 дні (днів) |
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MMSZ5V1ET1 | onsemi |
Description: DIODE ZENER 5.1V 500MW SOD123Tolerance: ±5% Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
на замовлення 5975 шт: термін постачання 21-31 дні (днів) |
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NLV74HC4020ADTR2G | onsemi |
Description: NLV74HC4020 - 14-STAGE BINARY RIPackaging: Bulk |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
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| FPF2G120BF07ASP | onsemi |
Description: IGBT MODULE 650V 40A 156W F2Packaging: Tray Package / Case: Module Mounting Type: Through Hole Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: F2 IGBT Type: Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 156 W Current - Collector Cutoff (Max): 250 µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FPF2G120BF07AS | onsemi |
Description: IGBT MODULE 650V 40A 156W F2Packaging: Tray Package / Case: Module Mounting Type: Through Hole Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: F2 IGBT Type: Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 156 W Current - Collector Cutoff (Max): 250 µA |
на замовлення 64 шт: термін постачання 21-31 дні (днів) |
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FPF1C2P5BF07A | onsemi |
Description: MOSFET 5N-CH 650V 36A F1Packaging: Tray Package / Case: F1 Module Mounting Type: Chassis Mount Configuration: 5 N-Channel (Solar Inverter) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 90mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: F1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LC75812PTS-8565-H | onsemi |
Description: IC DRVR DOT MATRIX 100TQFP Current - Supply: 500 µA Supplier Device Package: 100-TQFP (14x14) Digits or Characters: 16 Characters, 240 Characters, 12 Digits, 13 Digits Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C Configuration: Dot Matrix Interface: Serial Mounting Type: Surface Mount Display Type: LCD Package / Case: 100-TQFP Packaging: Bulk |
на замовлення 512 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ5258BLT1G | onsemi |
Description: DIODE ZENER 36V 225MW SOT23-3Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 27 V Qualification: AEC-Q101 |
на замовлення 12728 шт: термін постачання 21-31 дні (днів) |
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MMBZ5258BLT1 | onsemi |
Description: DIODE ZENER 36V 225MW SOT23-3Packaging: Bulk Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 27 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FJV1845EMTF | onsemi |
Description: TRANS NPN 120V 0.05A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V Frequency - Transition: 110MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FJV1845EMTF | onsemi |
Description: TRANS NPN 120V 0.05A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V Frequency - Transition: 110MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FEP16BTA | onsemi |
Description: DIODE ARRAY GP 100V 16A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4730A | onsemi |
Description: DIODE ZENER 3.9V 1W DO41Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCPF1300N80ZYD | onsemi |
Description: MOSFET N-CH 800V 4A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCPF165N65S3L1 | onsemi |
Description: MOSFET N-CH 650V 19A TO220F-3Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V |
на замовлення 30060 шт: термін постачання 21-31 дні (днів) |
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FCPF165N65S3R0L | onsemi |
Description: MOSFET N-CH 650V 19A TO220F-3Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V |
на замовлення 2655 шт: термін постачання 21-31 дні (днів) |
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FCPF165N65S3R0L | onsemi |
Description: MOSFET N-CH 650V 19A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS16TT1 | onsemi |
Description: DIODE SS SW 75V 200MA SC-75Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 24000 шт В кошику од. на суму грн. | ||||||||||||||||||
| NXH100T120L3Q0S1NG | onsemi |
Description: 1200V GEN III Q0PACK WITH NI-PLAMounting Type: Chassis Mount Package / Case: Module Packaging: Tray Input Capacitance (Cies) @ Vce: 4877 pF @ 25 V Current - Collector Cutoff (Max): 200 µA Power - Max: 122 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 54 A Supplier Device Package: 18-PIM/Q0PACK (55x32.5) NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Three Level Inverter Input: Standard |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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NXH011F120M3F2PTHG | onsemi |
Description: MOSFET 4N-CH 1200V 105A 34PIMGate Charge (Qg) (Max) @ Vgs: 284nC @ 18V Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 244W (Tj) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Supplier Device Package: 34-PIM (56.7x42.5) Vgs(th) (Max) @ Id: 4.4V @ 60mA FET Feature: Silicon Carbide (SiC) |
на замовлення 199 шт: термін постачання 21-31 дні (днів) |
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NXH007F120M3F2PTHG | onsemi |
Description: MOSFET 4N-CH 1200V 149A 34PIMPower - Max: 353W (Tj) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Supplier Device Package: 34-PIM (56.7x42.5) Vgs(th) (Max) @ Id: 4.4V @ 60mA FET Feature: Silicon Carbide (SiC) Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V Current - Continuous Drain (Id) @ 25°C: 149A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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NXH004P120M3F2PTNG | onsemi |
Description: MOSFET 2N-CH 1200V 338A 36PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1100W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 338A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V Vgs(th) (Max) @ Id: 4.4V @ 120mA Supplier Device Package: 36-PIM (56.7x62.8) |
на замовлення 14606 шт: термін постачання 21-31 дні (днів) |
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NXH004P120M3F2PNG | onsemi |
Description: MOSFET 2N-CH 1200V 338A 36PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.098W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 338A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V Vgs(th) (Max) @ Id: 4.4V @ 120mA Supplier Device Package: 36-PIM (56.7x62.8) |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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SG1577ASY | onsemi |
Description: IC REG CTRLR BUCK/BOOST 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply (Vcc/Vdd): 10V ~ 15V Supplier Device Package: 20-SOIC Duty Cycle (Max): 95% Number of Outputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| RD0504T-P-TL-H | onsemi |
Description: DIODE STANDARD 400V 5A TPFA Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 17 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TP-FA Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 400 V |
на замовлення 31500 шт: термін постачання 21-31 дні (днів) |
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RD0506LS-SB-1H | onsemi |
Description: DIODE STANDARD 600V 5A TO220F2FSPackaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-220F-2FS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 4649 шт: термін постачання 21-31 дні (днів) |
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MUN5136DW1T1G | onsemi |
Description: MUN5136 - DUAL BIAS RESISTOR TRASupplier Device Package: SC-88/SC70-6/SOT-363 Resistor - Emitter Base (R2): 100kOhms Resistor - Base (R1): 100kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 250mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Bulk |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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MC10H121P | onsemi |
Description: IC GATE OR/AND 4WIDE 16-DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Single-Ended Mounting Type: Through Hole Logic Type: AND/OR/INVERT Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 4 Schmitt Trigger Input: No Supplier Device Package: 16-PDIP Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC10H121M | onsemi |
Description: IC GATE OR/AND 4WIDE 16-SOEIAJPackaging: Tube Package / Case: 16-SOIC (0.209", 5.30mm Width) Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: AND/OR/INVERT Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 4 Schmitt Trigger Input: No Supplier Device Package: 16-SOEIAJ Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC10H121FNR2 | onsemi |
Description: IC OR/AND INVERTER GATE 20PLCCPackaging: Tape & Reel (TR) Package / Case: 20-LCC (J-Lead) Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: AND/OR/INVERT Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 4 Schmitt Trigger Input: No Supplier Device Package: 20-PLCC (9x9) Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC10H121FNR2G | onsemi |
Description: IC OR/AND INVERTER GATE 20PLCCPackaging: Tape & Reel (TR) Package / Case: 20-LCC (J-Lead) Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: AND/OR/INVERT Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 4 Schmitt Trigger Input: No Supplier Device Package: 20-PLCC (9x9) Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC10H124P | onsemi |
Description: IC XLATOR QUAD TTL-MECL 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Differential Mounting Type: Through Hole Operating Temperature: 0°C ~ 75°C (TA) Supplier Device Package: 16-PDIP Channel Type: Unidirectional Output Signal: MECL Translator Type: Mixed Signal Channels per Circuit: 4 Input Signal: TTL Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC10H125L | onsemi |
Description: IC TRANSLATOR UNIDIR 16CDIP Packaging: Tube Package / Case: 16-CDIP (0.300", 7.62mm) Output Type: Non-Inverted Mounting Type: Through Hole Operating Temperature: 0°C ~ 75°C (TA) Supplier Device Package: 16-CDIP Channel Type: Unidirectional Output Signal: TTL Translator Type: Mixed Signal Channels per Circuit: 4 Input Signal: MECL Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NIV3071MTW4TWG | onsemi |
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETTPackaging: Tape & Reel (TR) Package / Case: 16-WQFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount, Wettable Flank Function: Electronic Fuse Voltage - Input: 8V ~ 60V Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Supplier Device Package: 16-WQFN (5x6) |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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NIV3071MTW4TWG | onsemi |
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETTPackaging: Cut Tape (CT) Package / Case: 16-WQFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount, Wettable Flank Function: Electronic Fuse Voltage - Input: 8V ~ 60V Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Supplier Device Package: 16-WQFN (5x6) |
на замовлення 37170 шт: термін постачання 21-31 дні (днів) |
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NTBG045N065SC1 | onsemi |
Description: SILICON CARBIDE MOSFET, NCHANNELVgs (Max): +22V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.3V @ 8mA Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Drain to Source Voltage (Vdss): 650 V |
на замовлення 22400 шт: термін постачання 21-31 дні (днів) |
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NTBG045N065SC1 | onsemi |
Description: SILICON CARBIDE MOSFET, NCHANNELInput Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.3V @ 8mA Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
на замовлення 22617 шт: термін постачання 21-31 дні (днів) |
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NVBG045N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650VQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.3V @ 8mA Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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NVBG045N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650VQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.3V @ 8mA Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
на замовлення 790 шт: термін постачання 21-31 дні (днів) |
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NCV8768CD33ABR2G | onsemi |
Description: IC REG LINEAR 3.3V 150MA 14-SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 35 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: 14-SOIC Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Reset, Watchdog Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NCV8768CD33ABR2G | onsemi |
Description: IC REG LINEAR 3.3V 150MA 14-SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 35 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: 14-SOIC Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Reset, Watchdog Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FJV992PMTF | onsemi |
Description: TRANS PNP 120V 0.05A SOT-23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 300 mW |
на замовлення 20500 шт: термін постачання 21-31 дні (днів) |
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LC72722PM-TLM-E | onsemi |
Description: RF DEMODULATOR IC 24MFPPackaging: Tape & Reel (TR) Package / Case: 24-SOIC (0.311", 7.90mm Width) Mounting Type: Surface Mount Voltage - Supply: 4.5V ~ 5.5V Gain: 31dB Supplier Device Package: 24-MFP Current - Supply: 9 mA |
товару немає в наявності |
В кошику од. на суму грн. |
| MC10ELT28DG |
Виробник: onsemi
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential, Single-Ended
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: TTL, PECL
Translator Type: Mixed Signal
Channels per Circuit: 2
Input Signal: PECL, TTL
Number of Circuits: 1
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential, Single-Ended
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: TTL, PECL
Translator Type: Mixed Signal
Channels per Circuit: 2
Input Signal: PECL, TTL
Number of Circuits: 1
на замовлення 1465 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 83+ | 258.39 грн |
| EGP10K |
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Виробник: onsemi
Description: DIODE STANDARD 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 8.36 грн |
| 10000+ | 7.33 грн |
| EGP10K |
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Виробник: onsemi
Description: DIODE STANDARD 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 18661 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.70 грн |
| 14+ | 21.44 грн |
| 100+ | 15.34 грн |
| 500+ | 10.88 грн |
| 1000+ | 9.45 грн |
| 2000+ | 8.78 грн |
| FFSB0665B-F085 |
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Виробник: onsemi
Description: DIODE SIL CARB 650V 8A D2PAK-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARB 650V 8A D2PAK-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 109.11 грн |
| 1600+ | 100.81 грн |
| FFSB0665B-F085 |
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Виробник: onsemi
Description: DIODE SIL CARB 650V 8A D2PAK-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE SIL CARB 650V 8A D2PAK-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 7944 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 303.09 грн |
| 10+ | 192.17 грн |
| 100+ | 135.69 грн |
| FFSB0665B |
![]() |
Виробник: onsemi
Description: DIODE SIL CARB 650V 8A D2PAK-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARB 650V 8A D2PAK-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| FFSB0665B |
![]() |
Виробник: onsemi
Description: DIODE SIL CARB 650V 8A D2PAK-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE SIL CARB 650V 8A D2PAK-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 259pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 712 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.31 грн |
| 10+ | 131.26 грн |
| 100+ | 90.77 грн |
| MC74HC1G08DFT1 |
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Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SC88A
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Bulk
Description: IC GATE AND 1CH 2-INP SC88A
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Bulk
на замовлення 83960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3620+ | 5.34 грн |
| MC74HC1G08DBVT1G-Q |
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Виробник: onsemi
Description: SINGLE 2-INPUT AND GATE
Number of Circuits: 1
Grade: Automotive
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SC-74A
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Description: SINGLE 2-INPUT AND GATE
Number of Circuits: 1
Grade: Automotive
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SC-74A
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.11 грн |
| MC74HC1G08DBVT1G-Q |
![]() |
Виробник: onsemi
Description: SINGLE 2-INPUT AND GATE
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Grade: Automotive
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SC-74A
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: SINGLE 2-INPUT AND GATE
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Grade: Automotive
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SC-74A
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 5750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.96 грн |
| 80+ | 3.72 грн |
| 92+ | 3.25 грн |
| 110+ | 2.54 грн |
| 250+ | 2.31 грн |
| 500+ | 2.17 грн |
| 1000+ | 2.02 грн |
| NS3L500MTTWG |
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Виробник: onsemi
Description: IC ETH LAN SW 2:1GB 8CH 56-WQFN
Features: 10/100/1000 Base-T, LAN, LED
Packaging: Bulk
Package / Case: 56-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Networking
On-State Resistance (Max): 7Ohm
-3db Bandwidth: 800MHz
Supplier Device Package: 56-WQFN (5x11)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 8
Description: IC ETH LAN SW 2:1GB 8CH 56-WQFN
Features: 10/100/1000 Base-T, LAN, LED
Packaging: Bulk
Package / Case: 56-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Networking
On-State Resistance (Max): 7Ohm
-3db Bandwidth: 800MHz
Supplier Device Package: 56-WQFN (5x11)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 8
на замовлення 431751 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 183+ | 108.77 грн |
| NRVHP160SFT3G |
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Виробник: onsemi
Description: DIODE STANDARD 600V 1A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 600V 1A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| NRVHP160SFT3G |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 600V 1A SOD123FL
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-123FL
Description: DIODE STANDARD 600V 1A SOD123FL
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-123FL
на замовлення 951 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.94 грн |
| 11+ | 28.81 грн |
| 100+ | 18.48 грн |
| 500+ | 13.15 грн |
| NRVB140ESFT3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| NRVB140ESFT3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
на замовлення 3476 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.94 грн |
| 11+ | 28.44 грн |
| 100+ | 18.28 грн |
| 500+ | 13.01 грн |
| 1000+ | 11.68 грн |
| 2000+ | 10.55 грн |
| NRVB140SFT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| 1N4752A |
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Виробник: onsemi
Description: DIODE ZENER 33V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
Description: DIODE ZENER 33V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
на замовлення 67347 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.01 грн |
| 30+ | 9.98 грн |
| 100+ | 6.22 грн |
| 500+ | 4.28 грн |
| 1000+ | 3.78 грн |
| 3000+ | 3.14 грн |
| 6000+ | 2.77 грн |
| 12000+ | 2.50 грн |
| 51000+ | 2.07 грн |
| MMSZ5V1T3G |
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Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
на замовлення 539500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6662+ | 3.53 грн |
| MMSZ5V1ET1 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
на замовлення 5975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5975+ | 3.53 грн |
| NLV74HC4020ADTR2G |
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на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 483+ | 45.89 грн |
| FPF2G120BF07ASP |
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Виробник: onsemi
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
товару немає в наявності
В кошику
од. на суму грн.
| FPF2G120BF07AS |
![]() |
Виробник: onsemi
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6927.71 грн |
| 10+ | 6026.13 грн |
| FPF1C2P5BF07A |
![]() |
Виробник: onsemi
Description: MOSFET 5N-CH 650V 36A F1
Packaging: Tray
Package / Case: F1 Module
Mounting Type: Chassis Mount
Configuration: 5 N-Channel (Solar Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 90mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: F1
Description: MOSFET 5N-CH 650V 36A F1
Packaging: Tray
Package / Case: F1 Module
Mounting Type: Chassis Mount
Configuration: 5 N-Channel (Solar Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 90mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: F1
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| LC75812PTS-8565-H |
Виробник: onsemi
Description: IC DRVR DOT MATRIX 100TQFP
Current - Supply: 500 µA
Supplier Device Package: 100-TQFP (14x14)
Digits or Characters: 16 Characters, 240 Characters, 12 Digits, 13 Digits
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Configuration: Dot Matrix
Interface: Serial
Mounting Type: Surface Mount
Display Type: LCD
Package / Case: 100-TQFP
Packaging: Bulk
Description: IC DRVR DOT MATRIX 100TQFP
Current - Supply: 500 µA
Supplier Device Package: 100-TQFP (14x14)
Digits or Characters: 16 Characters, 240 Characters, 12 Digits, 13 Digits
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Configuration: Dot Matrix
Interface: Serial
Mounting Type: Surface Mount
Display Type: LCD
Package / Case: 100-TQFP
Packaging: Bulk
на замовлення 512 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 205.58 грн |
| SZMMBZ5258BLT1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 36V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Qualification: AEC-Q101
Description: DIODE ZENER 36V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Qualification: AEC-Q101
на замовлення 12728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.33 грн |
| 26+ | 11.61 грн |
| 100+ | 7.23 грн |
| 500+ | 5.00 грн |
| 1000+ | 4.42 грн |
| MMBZ5258BLT1 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 36V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Description: DIODE ZENER 36V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7869+ | 2.63 грн |
| FJV1845EMTF |
![]() |
Виробник: onsemi
Description: TRANS NPN 120V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Description: TRANS NPN 120V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
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| FJV1845EMTF |
![]() |
Виробник: onsemi
Description: TRANS NPN 120V 0.05A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Description: TRANS NPN 120V 0.05A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
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| FEP16BTA |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 100V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE ARRAY GP 100V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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| 1N4730A |
![]() |
Виробник: onsemi
Description: DIODE ZENER 3.9V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: DIODE ZENER 3.9V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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| FCPF1300N80ZYD |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 800V 4A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
Description: MOSFET N-CH 800V 4A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
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| FCPF165N65S3L1 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
на замовлення 30060 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 161+ | 124.21 грн |
| FCPF165N65S3R0L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
на замовлення 2655 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 133.56 грн |
| FCPF165N65S3R0L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
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од. на суму грн.
| NXH100T120L3Q0S1NG |
![]() |
Виробник: onsemi
Description: 1200V GEN III Q0PACK WITH NI-PLA
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 4877 pF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 122 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 54 A
Supplier Device Package: 18-PIM/Q0PACK (55x32.5)
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Description: 1200V GEN III Q0PACK WITH NI-PLA
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 4877 pF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 122 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 54 A
Supplier Device Package: 18-PIM/Q0PACK (55x32.5)
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4323.63 грн |
| 24+ | 3785.02 грн |
| 48+ | 3658.87 грн |
| NXH011F120M3F2PTHG |
![]() |
Виробник: onsemi
Description: MOSFET 4N-CH 1200V 105A 34PIM
Gate Charge (Qg) (Max) @ Vgs: 284nC @ 18V
Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 244W (Tj)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: 34-PIM (56.7x42.5)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
FET Feature: Silicon Carbide (SiC)
Description: MOSFET 4N-CH 1200V 105A 34PIM
Gate Charge (Qg) (Max) @ Vgs: 284nC @ 18V
Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 244W (Tj)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: 34-PIM (56.7x42.5)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
FET Feature: Silicon Carbide (SiC)
на замовлення 199 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7792.90 грн |
| NXH007F120M3F2PTHG |
![]() |
Виробник: onsemi
Description: MOSFET 4N-CH 1200V 149A 34PIM
Power - Max: 353W (Tj)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: 34-PIM (56.7x42.5)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V
Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Description: MOSFET 4N-CH 1200V 149A 34PIM
Power - Max: 353W (Tj)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Supplier Device Package: 34-PIM (56.7x42.5)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V
Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10615.79 грн |
| 20+ | 9961.98 грн |
| NXH004P120M3F2PTNG |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
на замовлення 14606 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13275.53 грн |
| 20+ | 11974.38 грн |
| NXH004P120M3F2PNG |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.098W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.098W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13552.33 грн |
| 20+ | 12264.93 грн |
| SG1577ASY |
Виробник: onsemi
Description: IC REG CTRLR BUCK/BOOST 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply (Vcc/Vdd): 10V ~ 15V
Supplier Device Package: 20-SOIC
Duty Cycle (Max): 95%
Number of Outputs: 2
Description: IC REG CTRLR BUCK/BOOST 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply (Vcc/Vdd): 10V ~ 15V
Supplier Device Package: 20-SOIC
Duty Cycle (Max): 95%
Number of Outputs: 2
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| RD0504T-P-TL-H |
Виробник: onsemi
Description: DIODE STANDARD 400V 5A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TP-FA
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Description: DIODE STANDARD 400V 5A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TP-FA
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
на замовлення 31500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 443+ | 45.02 грн |
| RD0506LS-SB-1H |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 600V 5A TO220F2FS
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE STANDARD 600V 5A TO220F2FS
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 4649 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 387+ | 51.64 грн |
| MUN5136DW1T1G |
![]() |
Виробник: onsemi
Description: MUN5136 - DUAL BIAS RESISTOR TRA
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 100kOhms
Resistor - Base (R1): 100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Bulk
Description: MUN5136 - DUAL BIAS RESISTOR TRA
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 100kOhms
Resistor - Base (R1): 100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Bulk
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8663+ | 2.14 грн |
| MC10H121P |
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Виробник: onsemi
Description: IC GATE OR/AND 4WIDE 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Single-Ended
Mounting Type: Through Hole
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Number of Circuits: 1
Description: IC GATE OR/AND 4WIDE 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Single-Ended
Mounting Type: Through Hole
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Number of Circuits: 1
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| MC10H121M |
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Виробник: onsemi
Description: IC GATE OR/AND 4WIDE 16-SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-SOEIAJ
Number of Circuits: 1
Description: IC GATE OR/AND 4WIDE 16-SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-SOEIAJ
Number of Circuits: 1
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| MC10H121FNR2 |
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Виробник: onsemi
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
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Мінімальне замовлення: 500 шт
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| MC10H121FNR2G |
![]() |
Виробник: onsemi
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
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Мінімальне замовлення: 500 шт
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| MC10H124P |
Виробник: onsemi
Description: IC XLATOR QUAD TTL-MECL 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-PDIP
Channel Type: Unidirectional
Output Signal: MECL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: TTL
Number of Circuits: 1
Description: IC XLATOR QUAD TTL-MECL 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-PDIP
Channel Type: Unidirectional
Output Signal: MECL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: TTL
Number of Circuits: 1
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| MC10H125L |
Виробник: onsemi
Description: IC TRANSLATOR UNIDIR 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-CDIP
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: MECL
Number of Circuits: 1
Description: IC TRANSLATOR UNIDIR 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-CDIP
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: MECL
Number of Circuits: 1
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| NIV3071MTW4TWG |
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Виробник: onsemi
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 207.00 грн |
| NIV3071MTW4TWG |
![]() |
Виробник: onsemi
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Cut Tape (CT)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Cut Tape (CT)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
на замовлення 37170 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 534.27 грн |
| 10+ | 348.15 грн |
| 100+ | 254.30 грн |
| 500+ | 228.96 грн |
| NTBG045N065SC1 |
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Виробник: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Vgs (Max): +22V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Description: SILICON CARBIDE MOSFET, NCHANNEL
Vgs (Max): +22V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
на замовлення 22400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 459.90 грн |
| NTBG045N065SC1 |
![]() |
Виробник: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SILICON CARBIDE MOSFET, NCHANNEL
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 22617 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 909.26 грн |
| 10+ | 613.28 грн |
| 100+ | 542.07 грн |
| NVBG045N065SC1 |
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Виробник: onsemi
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
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| NVBG045N065SC1 |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1196.89 грн |
| 10+ | 1015.34 грн |
| 100+ | 878.15 грн |
| NCV8768CD33ABR2G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 51.60 грн |
| 5000+ | 48.34 грн |
| NCV8768CD33ABR2G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.34 грн |
| 10+ | 112.65 грн |
| 25+ | 95.30 грн |
| 100+ | 70.98 грн |
| 250+ | 61.92 грн |
| 500+ | 56.34 грн |
| 1000+ | 50.81 грн |
| FJV992PMTF |
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Виробник: onsemi
Description: TRANS PNP 120V 0.05A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Description: TRANS PNP 120V 0.05A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
на замовлення 20500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8876+ | 2.22 грн |
| LC72722PM-TLM-E |
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Виробник: onsemi
Description: RF DEMODULATOR IC 24MFP
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.311", 7.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Gain: 31dB
Supplier Device Package: 24-MFP
Current - Supply: 9 mA
Description: RF DEMODULATOR IC 24MFP
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.311", 7.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Gain: 31dB
Supplier Device Package: 24-MFP
Current - Supply: 9 mA
товару немає в наявності
В кошику
од. на суму грн.





































