Продукція > ONSEMI > Всі товари виробника ONSEMI (142490) > Сторінка 2340 з 2375

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HUF75344G3 HUF75344G3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E85A2627C55EA&compId=HUF75344G3.pdf?ci_sign=79d5a31b4ae7a24ec68463285d7bf29cbcc77548 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 178 шт:
термін постачання 21-30 дні (днів)
2+256.15 грн
5+194.10 грн
14+183.76 грн
20+180.58 грн
30+177.40 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NCP711ASNADJT1G ONSEMI ncp711-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.355V
Output voltage: 1.2...17V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP711
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...18V
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NTP360N80S3Z NTP360N80S3Z ONSEMI ntp360n80s3z-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
2+261.29 грн
7+152.73 грн
17+143.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FCH060N80-F155 ONSEMI fch060n80_f155-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 36.8A
Pulsed drain current: 174A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
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NTD360N80S3Z ONSEMI ntd360n80s3z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Case: DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25.3nC
On-state resistance: 0.3Ω
Drain current: 8.2A
Gate-source voltage: ±20V
Pulsed drain current: 32.5A
Power dissipation: 96W
Drain-source voltage: 800V
Kind of channel: enhancement
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NTPF360N80S3Z ONSEMI ntpf360n80s3z-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
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ISL9R1560P2-F085 ONSEMI isl9r1560p-f085-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC
Case: TO220AC
Semiconductor structure: single diode
Load current: 15A
Max. off-state voltage: 0.6kV
Kind of package: tube
Application: automotive industry
Type of diode: rectifying
Mounting: THT
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FDMS3669S ONSEMI fdms3669s-d.pdf ONSM-S-A0003585221-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8018 ONSEMI fdms8018-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 680A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8333L ONSEMI fdms8333l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
9+44.55 грн
25+39.77 грн
100+35.80 грн
500+34.21 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FDMS8320LDC ONSEMI fdms8320ldc-d.pdf FDMS8320LDC-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86103L ONSEMI fdms86103l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 414A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86350ET80 ONSEMI fdms86350et80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FPF1504BUCX ONSEMI fpf1504cn-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape
Version: ESD
Active logical level: high
Kind of package: reel; tape
Case: WLCSP4
Integrated circuit features: output discharge
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 40mΩ
Number of channels: 1
Supply voltage: 1...3.6V DC
Output current: 1.5A
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MJ11028G MJ11028G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0747DE9064469&compId=MJ11028G.PDF?ci_sign=534a61d81034875c301163e41abba81b472ba958 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Mounting: THT
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Power dissipation: 300W
Collector current: 50A
Collector-emitter voltage: 60V
Case: TO3
Kind of package: in-tray
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
1+598.82 грн
5+532.19 грн
В кошику  од. на суму  грн.
GBU4G GBU4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FDMT800100DC ONSEMI fdmt800100dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 5.39mΩ
Power dissipation: 156W
Drain current: 102A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 989A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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NC7SZ125L6X ONSEMI NC7SZ125-D.PDF Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
5000+5.23 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
NC7SZ125L6X-L22175 ONSEMI nc7sz125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+10.02 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BDV64BG BDV64BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD2C2BD2BFC469&compId=BDV64BG.PDF?ci_sign=4c1079444a53a2960458ba8411143278c88fd201 Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Kind of package: tube
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Collector current: 10A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
2+271.57 грн
7+137.62 грн
19+130.46 грн
60+127.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MC78M15CDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC78M15ABDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC78M15ACDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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ESD9L5.0ST5G ESD9L5.0ST5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688951430750745&compId=ESD9L5.0ST5G.PDF?ci_sign=0bb65ff49ba4e4569b3466dbe83fcf59f28cd37c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
на замовлення 8858 шт:
термін постачання 21-30 дні (днів)
30+14.56 грн
36+11.30 грн
41+9.78 грн
100+5.59 грн
246+3.80 грн
676+3.60 грн
5000+3.47 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
SD12CT1G SD12CT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531EE992E36206E7ECB8BF&compId=SD12CT1G.pdf?ci_sign=91effd7a500e5a015e530fde4fdb218c748ce476 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 13.3V; 15A; bidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Version: ESD
Kind of package: reel; tape
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
12+37.69 грн
15+28.00 грн
17+24.50 грн
100+14.56 грн
107+8.75 грн
294+8.27 грн
3000+7.95 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NXH020F120MNF1PG ONSEMI nxh020f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH020F120MNF1PTG ONSEMI nxh020f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH020P120MNF1PG ONSEMI nxh020p120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH020P120MNF1PTG ONSEMI nxh020p120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH020U90MNF2PTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABD49D313E1240D3&compId=NXH020U90MNF2PTG.PDF?ci_sign=7d008e4430d5dbb48e4db2d6d63fdf1980867ed3 Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Kind of package: in-tray
Mechanical mounting: screw
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MMSZ5254BT1G MMSZ5254BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Case: SOD123
Manufacturer series: MMSZ52xxB
на замовлення 2352 шт:
термін постачання 21-30 дні (днів)
53+8.12 грн
72+5.57 грн
82+4.85 грн
105+3.82 грн
152+2.63 грн
495+1.89 грн
500+1.73 грн
1000+1.72 грн
Мінімальне замовлення: 53
В кошику  од. на суму  грн.
NCV317BD2TR4G ONSEMI lm317-d.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FSUSB30L10X ONSEMI ONSM-S-A0003587650-1.pdf?t.download=true&u=5oefqw Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 3÷4.3VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 3...4.3V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
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FSUSB30UMX ONSEMI ONSM-S-A0003587650-1.pdf?t.download=true&u=5oefqw Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.3VDC; reel,tape
Kind of output: DPDT
Case: UMLP10
Kind of integrated circuit: USB switch
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 1µA
Number of channels: 2
Supply voltage: 3...4.3V DC
Type of integrated circuit: analog switch
Kind of package: reel; tape
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FSUSB31K8X ONSEMI FAIRS27808-1.pdf?t.download=true&u=5oefqw Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; US8; 3÷4.3VDC; reel,tape; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: US8
Supply voltage: 3...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPST-NO x2
Quiescent current: 1µA
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FSUSB43L10X ONSEMI fsusb43-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 2.4÷4.4VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
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FSUSB63UMX ONSEMI FSUSB63-D.PDF Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP12
Supply voltage: 2.7...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DP3T
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FSUSB73UMX ONSEMI ONSM-S-A0003587518-1.pdf?t.download=true&u=5oefqw Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP16; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP3T
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FSUSB74MPX ONSEMI fsusb74-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; MLP16; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: MLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP4T
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74LVX14M 74LVX14M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8DFCE66D1275EA&compId=74LVX14M.pdf?ci_sign=8b67b11cf7c362ffbd2dc736e2c6e9696e0d00e5 Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; LVX; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Quiescent current: 20µA
Manufacturer series: LVX
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74LVX14MTCX 74LVX14MTCX ONSEMI pVersion=0046&contRep=ZT&docId=E20E0FFA3459AFF1A303005056AB0C4F&compId=74LVX14.pdf?ci_sign=76942133556c3f6aeebd5524c92944d49cae575b Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; LVX
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVX
на замовлення 1803 шт:
термін постачання 21-30 дні (днів)
12+37.69 грн
14+28.96 грн
16+26.01 грн
25+22.51 грн
61+15.51 грн
167+14.64 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NCP81292MNTXG ONSEMI ncp81292-d.pdf Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
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NCP81295MNTXG ONSEMI NCP81295,96.pdf Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
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NCP81296MNTXG ONSEMI ncp81295-d.pdf Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
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FFSD1065A ONSEMI ffsd1065a-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 18A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 18A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
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MUR110G ONSEMI mur120-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
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MUR110RLG ONSEMI mur120-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
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NLAS323USG ONSEMI nlas323-d.pdf Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 2; IN: 2; CMOS; SMD; US8; 2÷5.5VDC; -55÷125°C
Technology: CMOS
Case: US8
Kind of output: SPST-NO x2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of channels: 2
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: analog switch
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MUN5235DW1T1G MUN5235DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED998D1E97BE6D19820&compId=MUN5235DW1.pdf?ci_sign=536aceae9a0f01eab405b7427173bdadc706b7fa Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 140
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SMUN5235DW1T1G SMUN5235DW1T1G ONSEMI dtc123jd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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FODM8061 FODM8061 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CF18CB875136749&compId=FODM8061.pdf?ci_sign=e4ecb6b5afda5c847f6d384b983571a915ff1b4a Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Slew rate: 40kV/μs
на замовлення 1767 шт:
термін постачання 21-30 дні (днів)
3+183.33 грн
8+126.48 грн
21+119.32 грн
100+114.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MM74HCT05MTCX MM74HCT05MTCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CAD5D820&compId=MM74HCT05-D.pdf?ci_sign=a04760fd30ee7d124c4cd445a4ab741147d67d23 Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
на замовлення 1705 шт:
термін постачання 21-30 дні (днів)
8+57.40 грн
11+36.59 грн
25+32.77 грн
50+19.01 грн
135+17.98 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MM74HCT05MX MM74HCT05MX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CAD5D820&compId=MM74HCT05-D.pdf?ci_sign=a04760fd30ee7d124c4cd445a4ab741147d67d23 Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
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NCP139AFCT05ADJT2G ONSEMI ncp139-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷3V; 1A; WLCSP6
Type of integrated circuit: voltage regulator
Case: WLCSP6
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 80mV
Output current: 1A
Output voltage: 0.5...3V
Input voltage: 0.5...5.5V
Tolerance: ±1%
Manufacturer series: NCP139
Kind of voltage regulator: adjustable; LDO; linear
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MC74AC05DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628647BD4A0D3&compId=MC74AC05-D.pdf?ci_sign=4d3cfb017cd10cb7ff275b7f2491049f5015317b Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AC
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SPS-READER-GEVK ONSEMI SPS-READER-GEVK_Web.pdf Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323
Interface: I2C; SPI; UART
Kind of connector: pin header; SMA
development kits accessories features: Arduino Shield compatible
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H11A1M H11A1M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF7D7916FA41E27&compId=H11A1M.pdf?ci_sign=adc39363bc091f8d4d5c24fac42db4ef6e303434 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 50%@10mA
Turn-on time: 2µs
Turn-off time: 2µs
на замовлення 656 шт:
термін постачання 21-30 дні (днів)
14+32.55 грн
19+21.56 грн
49+19.09 грн
50+17.34 грн
135+17.26 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
H11A1SR2M ONSEMI 4n37m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: PDIP6
Max. off-state voltage: 6V
CTR@If: 50%@10mA
Collector-emitter voltage: 30V
Turn-on time: 2µs
Manufacturer series: H11Ax
Turn-off time: 2µs
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H11A1TVM H11A1TVM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C016ECC3CC0D6&compId=H11A1TVM.pdf?ci_sign=ae14f9b236a2e1f979a619c9076e4e0854780101 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
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SZMM3Z10VT1G SZMM3Z10VT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
на замовлення 1042 шт:
термін постачання 21-30 дні (днів)
39+11.14 грн
52+7.80 грн
70+5.76 грн
100+5.03 грн
315+2.98 грн
864+2.82 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
HUF75344G3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E85A2627C55EA&compId=HUF75344G3.pdf?ci_sign=79d5a31b4ae7a24ec68463285d7bf29cbcc77548
HUF75344G3
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 178 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+256.15 грн
5+194.10 грн
14+183.76 грн
20+180.58 грн
30+177.40 грн
Мінімальне замовлення: 2
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NCP711ASNADJT1G ncp711-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.355V
Output voltage: 1.2...17V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP711
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...18V
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NTP360N80S3Z ntp360n80s3z-d.pdf
NTP360N80S3Z
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+261.29 грн
7+152.73 грн
17+143.98 грн
Мінімальне замовлення: 2
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FCH060N80-F155 fch060n80_f155-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 36.8A
Pulsed drain current: 174A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
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NTD360N80S3Z ntd360n80s3z-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Case: DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25.3nC
On-state resistance: 0.3Ω
Drain current: 8.2A
Gate-source voltage: ±20V
Pulsed drain current: 32.5A
Power dissipation: 96W
Drain-source voltage: 800V
Kind of channel: enhancement
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NTPF360N80S3Z ntpf360n80s3z-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
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ISL9R1560P2-F085 isl9r1560p-f085-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC
Case: TO220AC
Semiconductor structure: single diode
Load current: 15A
Max. off-state voltage: 0.6kV
Kind of package: tube
Application: automotive industry
Type of diode: rectifying
Mounting: THT
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FDMS3669S fdms3669s-d.pdf ONSM-S-A0003585221-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8018 fdms8018-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 680A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8333L fdms8333l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+44.55 грн
25+39.77 грн
100+35.80 грн
500+34.21 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FDMS8320LDC fdms8320ldc-d.pdf FDMS8320LDC-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86103L fdms86103l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 414A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86350ET80 fdms86350et80-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FPF1504BUCX fpf1504cn-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape
Version: ESD
Active logical level: high
Kind of package: reel; tape
Case: WLCSP4
Integrated circuit features: output discharge
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 40mΩ
Number of channels: 1
Supply voltage: 1...3.6V DC
Output current: 1.5A
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MJ11028G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0747DE9064469&compId=MJ11028G.PDF?ci_sign=534a61d81034875c301163e41abba81b472ba958
MJ11028G
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Mounting: THT
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Power dissipation: 300W
Collector current: 50A
Collector-emitter voltage: 60V
Case: TO3
Kind of package: in-tray
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+598.82 грн
5+532.19 грн
В кошику  од. на суму  грн.
GBU4G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246
GBU4G
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FDMT800100DC fdmt800100dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 5.39mΩ
Power dissipation: 156W
Drain current: 102A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 989A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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NC7SZ125L6X NC7SZ125-D.PDF
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+5.23 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
NC7SZ125L6X-L22175 nc7sz125-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+10.02 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BDV64BG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD2C2BD2BFC469&compId=BDV64BG.PDF?ci_sign=4c1079444a53a2960458ba8411143278c88fd201
BDV64BG
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Kind of package: tube
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Collector current: 10A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+271.57 грн
7+137.62 грн
19+130.46 грн
60+127.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MC78M15CDTRKG mc78m00-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC78M15ABDTRKG mc78m00-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC78M15ACDTRKG mc78m00-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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ESD9L5.0ST5G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688951430750745&compId=ESD9L5.0ST5G.PDF?ci_sign=0bb65ff49ba4e4569b3466dbe83fcf59f28cd37c
ESD9L5.0ST5G
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
на замовлення 8858 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.56 грн
36+11.30 грн
41+9.78 грн
100+5.59 грн
246+3.80 грн
676+3.60 грн
5000+3.47 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
SD12CT1G pVersion=0046&contRep=ZT&docId=005056AB82531EE992E36206E7ECB8BF&compId=SD12CT1G.pdf?ci_sign=91effd7a500e5a015e530fde4fdb218c748ce476
SD12CT1G
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 13.3V; 15A; bidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Version: ESD
Kind of package: reel; tape
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.69 грн
15+28.00 грн
17+24.50 грн
100+14.56 грн
107+8.75 грн
294+8.27 грн
3000+7.95 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NXH020F120MNF1PG nxh020f120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH020F120MNF1PTG nxh020f120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH020P120MNF1PG nxh020p120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH020P120MNF1PTG nxh020p120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH020U90MNF2PTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABD49D313E1240D3&compId=NXH020U90MNF2PTG.PDF?ci_sign=7d008e4430d5dbb48e4db2d6d63fdf1980867ed3
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Kind of package: in-tray
Mechanical mounting: screw
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MMSZ5254BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5254BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Case: SOD123
Manufacturer series: MMSZ52xxB
на замовлення 2352 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
53+8.12 грн
72+5.57 грн
82+4.85 грн
105+3.82 грн
152+2.63 грн
495+1.89 грн
500+1.73 грн
1000+1.72 грн
Мінімальне замовлення: 53
В кошику  од. на суму  грн.
NCV317BD2TR4G lm317-d.pdf
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FSUSB30L10X ONSM-S-A0003587650-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 3÷4.3VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 3...4.3V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
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FSUSB30UMX ONSM-S-A0003587650-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.3VDC; reel,tape
Kind of output: DPDT
Case: UMLP10
Kind of integrated circuit: USB switch
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 1µA
Number of channels: 2
Supply voltage: 3...4.3V DC
Type of integrated circuit: analog switch
Kind of package: reel; tape
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FSUSB31K8X FAIRS27808-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; US8; 3÷4.3VDC; reel,tape; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: US8
Supply voltage: 3...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPST-NO x2
Quiescent current: 1µA
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FSUSB43L10X fsusb43-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 2.4÷4.4VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
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FSUSB63UMX FSUSB63-D.PDF
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP12
Supply voltage: 2.7...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DP3T
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FSUSB73UMX ONSM-S-A0003587518-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP16; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP3T
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FSUSB74MPX fsusb74-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; MLP16; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: MLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP4T
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74LVX14M pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8DFCE66D1275EA&compId=74LVX14M.pdf?ci_sign=8b67b11cf7c362ffbd2dc736e2c6e9696e0d00e5
74LVX14M
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; LVX; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Quiescent current: 20µA
Manufacturer series: LVX
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74LVX14MTCX pVersion=0046&contRep=ZT&docId=E20E0FFA3459AFF1A303005056AB0C4F&compId=74LVX14.pdf?ci_sign=76942133556c3f6aeebd5524c92944d49cae575b
74LVX14MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; LVX
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVX
на замовлення 1803 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.69 грн
14+28.96 грн
16+26.01 грн
25+22.51 грн
61+15.51 грн
167+14.64 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NCP81292MNTXG ncp81292-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
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NCP81295MNTXG NCP81295,96.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
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NCP81296MNTXG ncp81295-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
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FFSD1065A ffsd1065a-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 18A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 18A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
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MUR110G mur120-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
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MUR110RLG mur120-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
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NLAS323USG nlas323-d.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 2; IN: 2; CMOS; SMD; US8; 2÷5.5VDC; -55÷125°C
Technology: CMOS
Case: US8
Kind of output: SPST-NO x2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of channels: 2
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: analog switch
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MUN5235DW1T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED998D1E97BE6D19820&compId=MUN5235DW1.pdf?ci_sign=536aceae9a0f01eab405b7427173bdadc706b7fa
MUN5235DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 140
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SMUN5235DW1T1G dtc123jd-d.pdf
SMUN5235DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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FODM8061 pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CF18CB875136749&compId=FODM8061.pdf?ci_sign=e4ecb6b5afda5c847f6d384b983571a915ff1b4a
FODM8061
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Slew rate: 40kV/μs
на замовлення 1767 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+183.33 грн
8+126.48 грн
21+119.32 грн
100+114.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MM74HCT05MTCX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CAD5D820&compId=MM74HCT05-D.pdf?ci_sign=a04760fd30ee7d124c4cd445a4ab741147d67d23
MM74HCT05MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
на замовлення 1705 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.40 грн
11+36.59 грн
25+32.77 грн
50+19.01 грн
135+17.98 грн
Мінімальне замовлення: 8
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MM74HCT05MX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CAD5D820&compId=MM74HCT05-D.pdf?ci_sign=a04760fd30ee7d124c4cd445a4ab741147d67d23
MM74HCT05MX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
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NCP139AFCT05ADJT2G ncp139-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷3V; 1A; WLCSP6
Type of integrated circuit: voltage regulator
Case: WLCSP6
Number of channels: 1
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 80mV
Output current: 1A
Output voltage: 0.5...3V
Input voltage: 0.5...5.5V
Tolerance: ±1%
Manufacturer series: NCP139
Kind of voltage regulator: adjustable; LDO; linear
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MC74AC05DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628647BD4A0D3&compId=MC74AC05-D.pdf?ci_sign=4d3cfb017cd10cb7ff275b7f2491049f5015317b
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AC
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SPS-READER-GEVK SPS-READER-GEVK_Web.pdf
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323
Interface: I2C; SPI; UART
Kind of connector: pin header; SMA
development kits accessories features: Arduino Shield compatible
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H11A1M pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF7D7916FA41E27&compId=H11A1M.pdf?ci_sign=adc39363bc091f8d4d5c24fac42db4ef6e303434
H11A1M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 50%@10mA
Turn-on time: 2µs
Turn-off time: 2µs
на замовлення 656 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+32.55 грн
19+21.56 грн
49+19.09 грн
50+17.34 грн
135+17.26 грн
Мінімальне замовлення: 14
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H11A1SR2M 4n37m-d.pdf
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: PDIP6
Max. off-state voltage: 6V
CTR@If: 50%@10mA
Collector-emitter voltage: 30V
Turn-on time: 2µs
Manufacturer series: H11Ax
Turn-off time: 2µs
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H11A1TVM pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C016ECC3CC0D6&compId=H11A1TVM.pdf?ci_sign=ae14f9b236a2e1f979a619c9076e4e0854780101
H11A1TVM
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
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SZMM3Z10VT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
SZMM3Z10VT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
на замовлення 1042 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.14 грн
52+7.80 грн
70+5.76 грн
100+5.03 грн
315+2.98 грн
864+2.82 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
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