| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RFP12N10L | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 92 шт: термін постачання 14-30 дні (днів) |
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| NTTFS012N10MDTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Pulsed drain current: 217A Power dissipation: 62W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 14.4mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMYS012N10MCLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 283A Power dissipation: 36W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1SMB5913BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 3.3V; SMD; reel,tape; SMB; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 3.3V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
на замовлення 2950 шт: термін постачання 14-30 дні (днів) |
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MMSZ5226BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 6514 шт: термін постачання 14-30 дні (днів) |
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MMSZ4684T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ4xxTxG |
на замовлення 3512 шт: термін постачання 14-30 дні (днів) |
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| FUSB302BMPX | ONSEMI |
Category: Battery and battery cells controllersDescription: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps Mounting: SMD Operating temperature: -40...125°C USB speed: Full Speed Interface: USB Type of integrated circuit: interface Kind of integrated circuit: transceiver Case: WQFN14 DC supply current: 25µA Supply voltage: 2.8...5.5V Data transfer rate: 5Gbps Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FUSB302B01MPX | ONSEMI |
Category: Battery and battery cells controllersDescription: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB Mounting: SMD Operating temperature: -40...85°C USB speed: Full Speed Interface: I2C; USB Type of integrated circuit: interface Kind of integrated circuit: transceiver Case: WQFN14 Supply voltage: 2.7...21V Data transfer rate: 5Gbps |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FUSB302B11MPX | ONSEMI |
Category: Battery and battery cells controllersDescription: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps Mounting: SMD Operating temperature: -40...85°C USB speed: Full Speed Interface: I2C; USB; USB 2.0 Type of integrated circuit: interface Kind of integrated circuit: transceiver Case: WQFN14 Supply voltage: 2.85...5.5V Data transfer rate: 5Gbps Version: Standard; USB 2.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FUSB302BUCX | ONSEMI |
Category: USB interfaces - integrated circuitsDescription: IC: interface; USB C controller; Full Speed; 2.7÷5.5VDC; WLCSP9 Mounting: SMD Operating temperature: -40...85°C USB speed: Full Speed Type of integrated circuit: interface Kind of package: reel; tape Kind of integrated circuit: USB C controller Case: WLCSP9 Supply voltage: 2.7...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4003G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
на замовлення 454 шт: термін постачання 14-30 дні (днів) |
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1N4003RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; CASE59 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 5000pcs. |
на замовлення 4430 шт: термін постачання 14-30 дні (днів) |
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FDC638APZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 72mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1956 шт: термін постачання 14-30 дні (днів) |
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FDC638P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 72mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 114 шт: термін постачання 14-30 дні (днів) |
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MPSA92G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14175BDG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube Type of integrated circuit: digital Case: SO16 Mounting: SMD Supply voltage: 3...18V DC Kind of package: tube Number of channels: 4 Trigger: positive-edge-triggered Operating temperature: -55...125°C Technology: CMOS Kind of integrated circuit: D flip-flop |
на замовлення 372 шт: термін постачання 14-30 дні (днів) |
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FQB33N10TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Case: D2PAK Gate-source voltage: ±25V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 51nC Power dissipation: 127W Technology: QFET® On-state resistance: 52mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQB33N10LTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 40nC Power dissipation: 127W Pulsed drain current: 132A Technology: QFET® On-state resistance: 55mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FFSH2065B-F085 | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 22.3A; TO247-2; tube Mounting: THT Max. off-state voltage: 650V Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. forward voltage: 1.7V Load current: 22.3A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FFSH2065BDN-F085 | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube Mounting: THT Max. off-state voltage: 650V Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. forward voltage: 1.7V Load current: 20A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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4N33M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 2.5kV CTR@If: 50%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 5µs Turn-off time: 0.1ms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC157ADR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16 Type of integrated circuit: digital Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape Technology: TTL Number of channels: 4 Kind of integrated circuit: data selector; multiplexer Manufacturer series: HC Family: HC Number of inputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC157ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; HC; HC Type of integrated circuit: digital Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape Technology: TTL Number of channels: 4 Kind of integrated circuit: data selector; multiplexer Manufacturer series: HC Family: HC Number of inputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC157ADTR2G-Q | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; SMD; TSSOP16 Type of integrated circuit: digital Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Supply voltage: 2...6V Number of channels: 4 Kind of integrated circuit: data selector; multiplexer Family: HC Delay time: 160ns Number of inputs: 2 Number of outputs: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4007 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Capacitance: 15pF Power dissipation: 3W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FOD3180 | ONSEMI |
Category: Optocouplers - othersDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs Max. off-state voltage: 5V Turn-on time: 75ns Turn-off time: 55ns Output voltage: 0...25V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FOD3180TV | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: MOSFET Insulation voltage: 5kV Case: PDIP8 Slew rate: 15kV/μs Max. off-state voltage: 5V Manufacturer series: FOD3180 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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H11D1M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Turn-off time: 5µs Kind of output: transistor Number of channels: 1 Mounting: THT Max. off-state voltage: 6V Type of optocoupler: optocoupler CTR@If: 20%@10mA Collector-emitter voltage: 300V Insulation voltage: 4.17kV Case: DIP6 Turn-on time: 5µs |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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H11D1SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Manufacturer series: H11DX Turn-off time: 5µs Kind of output: transistor Number of channels: 1 Mounting: SMD Max. off-state voltage: 6V Type of optocoupler: optocoupler CTR@If: 20%@10mA Collector-emitter voltage: 300V Insulation voltage: 4.17kV Case: PDIP6 Turn-on time: 5µs |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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| H11D1SR2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Manufacturer series: H11DX Turn-off time: 5µs Kind of output: transistor Number of channels: 1 Mounting: SMD Max. off-state voltage: 6V Type of optocoupler: optocoupler CTR@If: 20%@10mA Collector-emitter voltage: 300V Insulation voltage: 4.17kV Case: PDIP6 Turn-on time: 5µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP1246ALD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC20ADG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Technology: CMOS Case: SO14 Number of channels: dual; 2 Family: HC Kind of gate: NAND Kind of package: tube Mounting: SMD Operating temperature: -55...125°C Supply voltage: 2...6V DC Number of inputs: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC20ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Technology: CMOS Case: SO14 Number of channels: dual; 2 Family: HC Kind of gate: NAND Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Supply voltage: 2...6V DC Number of inputs: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC20ADTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Technology: CMOS Case: TSSOP14 Number of channels: dual; 2 Family: HC Kind of gate: NAND Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Supply voltage: 2...6V DC Number of inputs: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CNY173SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CNY173TVM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CNY173VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MOC8106SR2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Mounting: SMD Type of optocoupler: optocoupler Case: SMD6 Kind of output: transistor Turn-on time: 2µs Turn-off time: 3µs Collector current: 50mA Number of channels: 1 Number of pins: 6 Max. off-state voltage: 6V Collector-emitter voltage: 70V Insulation voltage: 4.17kV |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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SS26 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 60V Case: SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS26 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.7V Power dissipation: 1.3W Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 60V Case: SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1SMB5949BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 100V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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| SZ1SMB5949BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 100V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMFS006N12MCT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 93A; Idm: 522A; 41W; DFN5 Kind of package: reel; tape Case: DFN5 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: 120V Drain current: 93A Gate charge: 42nC On-state resistance: 6mΩ Power dissipation: 41W Gate-source voltage: ±20V Pulsed drain current: 522A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMFS006N08MC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 216A; 78W; PQFN8 Kind of package: reel; tape Case: PQFN8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Gate charge: 30nC On-state resistance: 6mΩ Power dissipation: 78W Gate-source voltage: ±20V Pulsed drain current: 216A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KSC3265YMTF | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.8A Power dissipation: 0.2W Case: SOT23; TO236AB Current gain: 160...320 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
на замовлення 1394 шт: термін постачання 14-30 дні (днів) |
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| NCV8730BMTW1500TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 15V; 0.15A; WDFNW6; SMD Application: automotive industry Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Case: WDFNW6 Output current: 0.15A Number of channels: 1 Output voltage: 15V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMC8321LDC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 108A Pulsed drain current: 320A Power dissipation: 56W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP361SNT1G | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor Application: USB Number of channels: 1 Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Input voltage: 1.2...20V Threshold on-voltage: 3V Kind of output: transistor Type of integrated circuit: driver |
на замовлення 1883 шт: термін постачання 14-30 дні (днів) |
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NCP711ASN300T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1 Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Case: TSOP5 Mounting: SMD Output current: 0.1A Output voltage: 3V Type of integrated circuit: voltage regulator |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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M74VHC1G126DTT1G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA Kind of integrated circuit: buffer; non-inverting Technology: CMOS Number of channels: 1 Manufacturer series: VHC Kind of package: reel; tape Case: TSOP5 Mounting: SMD Operating temperature: -55...125°C Quiescent current: 40µA Supply voltage: 2...5.5V DC Kind of output: 3-state Type of integrated circuit: digital |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| NCP551SN50T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP551 Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Output current: 10mA Voltage drop: 0.15V Tolerance: ±2% Input voltage: 12V Output voltage: 5V Type of integrated circuit: voltage regulator |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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NCP115ASN330T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP115 Kind of package: reel; tape Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Output current: 0.3A Tolerance: ±2% Input voltage: 1.7...5.5V Output voltage: 3.3V Type of integrated circuit: voltage regulator |
на замовлення 2988 шт: термін постачання 14-30 дні (днів) |
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| BD241CG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 40W Case: TO220AB Current gain: 2.5 Mounting: THT Kind of package: tube Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTBG014N120M3P | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 106A Pulsed drain current: 452A Power dissipation: 326W Case: D2PAK-7 Gate-source voltage: -10...22V On-state resistance: 29mΩ Mounting: SMD Gate charge: 377nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTH4L014N120M3P | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 107A Pulsed drain current: 407A Power dissipation: 343W Case: TO247-4 Gate-source voltage: -10...22V On-state resistance: 29mΩ Mounting: THT Gate charge: 322nC Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
BD787G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 15W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BCX19LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...600 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BCW71 | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23; TO236AB Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 330MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FDD850N10L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11.1A Power dissipation: 50W Case: DPAK Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1725 шт: термін постачання 14-30 дні (днів) |
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FDD86102LZ | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Power dissipation: 54W Case: DPAK Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 1286 шт: термін постачання 14-30 дні (днів) |
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| RFP12N10L | ![]() |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 92 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.15 грн |
| 10+ | 52.87 грн |
| NTTFS012N10MDTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 217A
Power dissipation: 62W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 217A
Power dissipation: 62W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| NVMYS012N10MCLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 283A
Power dissipation: 36W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 283A
Power dissipation: 36W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| 1SMB5913BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 2950 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.60 грн |
| 30+ | 14.02 грн |
| 37+ | 11.50 грн |
| 50+ | 9.99 грн |
| 100+ | 8.73 грн |
| 500+ | 6.80 грн |
| MMSZ5226BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 6514 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.85 грн |
| 64+ | 6.63 грн |
| 91+ | 4.62 грн |
| 107+ | 3.93 грн |
| 250+ | 3.16 грн |
| 500+ | 2.71 грн |
| 1000+ | 2.36 грн |
| 3000+ | 1.91 грн |
| 6000+ | 1.68 грн |
| MMSZ4684T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
на замовлення 3512 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.23 грн |
| 84+ | 5.04 грн |
| 156+ | 2.69 грн |
| 500+ | 1.89 грн |
| FUSB302BMPX |
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Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps
Mounting: SMD
Operating temperature: -40...125°C
USB speed: Full Speed
Interface: USB
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Case: WQFN14
DC supply current: 25µA
Supply voltage: 2.8...5.5V
Data transfer rate: 5Gbps
Version: ESD
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps
Mounting: SMD
Operating temperature: -40...125°C
USB speed: Full Speed
Interface: USB
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Case: WQFN14
DC supply current: 25µA
Supply voltage: 2.8...5.5V
Data transfer rate: 5Gbps
Version: ESD
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В кошику
од. на суму грн.
| FUSB302B01MPX |
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Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB
Mounting: SMD
Operating temperature: -40...85°C
USB speed: Full Speed
Interface: I2C; USB
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Case: WQFN14
Supply voltage: 2.7...21V
Data transfer rate: 5Gbps
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB
Mounting: SMD
Operating temperature: -40...85°C
USB speed: Full Speed
Interface: I2C; USB
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Case: WQFN14
Supply voltage: 2.7...21V
Data transfer rate: 5Gbps
товару немає в наявності
В кошику
од. на суму грн.
| FUSB302B11MPX |
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Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps
Mounting: SMD
Operating temperature: -40...85°C
USB speed: Full Speed
Interface: I2C; USB; USB 2.0
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Case: WQFN14
Supply voltage: 2.85...5.5V
Data transfer rate: 5Gbps
Version: Standard; USB 2.0
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps
Mounting: SMD
Operating temperature: -40...85°C
USB speed: Full Speed
Interface: I2C; USB; USB 2.0
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Case: WQFN14
Supply voltage: 2.85...5.5V
Data transfer rate: 5Gbps
Version: Standard; USB 2.0
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В кошику
од. на суму грн.
| FUSB302BUCX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; Full Speed; 2.7÷5.5VDC; WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
USB speed: Full Speed
Type of integrated circuit: interface
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Case: WLCSP9
Supply voltage: 2.7...5.5V DC
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; Full Speed; 2.7÷5.5VDC; WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
USB speed: Full Speed
Type of integrated circuit: interface
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Case: WLCSP9
Supply voltage: 2.7...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| 1N4003G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 454 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.13 грн |
| 68+ | 6.21 грн |
| 77+ | 5.46 грн |
| 100+ | 4.21 грн |
| 112+ | 3.75 грн |
| 1N4003RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
на замовлення 4430 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.27 грн |
| 49+ | 8.73 грн |
| 100+ | 5.52 грн |
| 500+ | 4.08 грн |
| 1000+ | 3.58 грн |
| FDC638APZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1956 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 56.04 грн |
| 12+ | 37.85 грн |
| 50+ | 25.68 грн |
| 100+ | 21.82 грн |
| 500+ | 15.78 грн |
| 1000+ | 14.18 грн |
| 1500+ | 13.43 грн |
| FDC638P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 114 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.79 грн |
| 9+ | 51.36 грн |
| 10+ | 43.05 грн |
| 50+ | 25.35 грн |
| 100+ | 20.73 грн |
| MPSA92G | ![]() |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
| MC14175BDG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Supply voltage: 3...18V DC
Kind of package: tube
Number of channels: 4
Trigger: positive-edge-triggered
Operating temperature: -55...125°C
Technology: CMOS
Kind of integrated circuit: D flip-flop
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Supply voltage: 3...18V DC
Kind of package: tube
Number of channels: 4
Trigger: positive-edge-triggered
Operating temperature: -55...125°C
Technology: CMOS
Kind of integrated circuit: D flip-flop
на замовлення 372 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.96 грн |
| 18+ | 24.42 грн |
| 25+ | 22.49 грн |
| 48+ | 21.23 грн |
| 144+ | 20.48 грн |
| FQB33N10TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 51nC
Power dissipation: 127W
Technology: QFET®
On-state resistance: 52mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 51nC
Power dissipation: 127W
Technology: QFET®
On-state resistance: 52mΩ
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| FQB33N10LTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 40nC
Power dissipation: 127W
Pulsed drain current: 132A
Technology: QFET®
On-state resistance: 55mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 40nC
Power dissipation: 127W
Pulsed drain current: 132A
Technology: QFET®
On-state resistance: 55mΩ
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| FFSH2065B-F085 |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.3A; TO247-2; tube
Mounting: THT
Max. off-state voltage: 650V
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 22.3A
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.3A; TO247-2; tube
Mounting: THT
Max. off-state voltage: 650V
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 22.3A
Application: automotive industry
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| FFSH2065BDN-F085 |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 20A
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 20A
Application: automotive industry
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| 4N33M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
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| MC74HC157ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Technology: TTL
Number of channels: 4
Kind of integrated circuit: data selector; multiplexer
Manufacturer series: HC
Family: HC
Number of inputs: 2
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Technology: TTL
Number of channels: 4
Kind of integrated circuit: data selector; multiplexer
Manufacturer series: HC
Family: HC
Number of inputs: 2
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| MC74HC157ADTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; HC; HC
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Technology: TTL
Number of channels: 4
Kind of integrated circuit: data selector; multiplexer
Manufacturer series: HC
Family: HC
Number of inputs: 2
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; HC; HC
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Technology: TTL
Number of channels: 4
Kind of integrated circuit: data selector; multiplexer
Manufacturer series: HC
Family: HC
Number of inputs: 2
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| MC74HC157ADTR2G-Q |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; SMD; TSSOP16
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 4
Kind of integrated circuit: data selector; multiplexer
Family: HC
Delay time: 160ns
Number of inputs: 2
Number of outputs: 4
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; SMD; TSSOP16
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 4
Kind of integrated circuit: data selector; multiplexer
Family: HC
Delay time: 160ns
Number of inputs: 2
Number of outputs: 4
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| 1N4007 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
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| FOD3180 |
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Виробник: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Turn-on time: 75ns
Turn-off time: 55ns
Output voltage: 0...25V
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Turn-on time: 75ns
Turn-off time: 55ns
Output voltage: 0...25V
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| FOD3180TV |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD3180
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD3180
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| H11D1M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Turn-off time: 5µs
Kind of output: transistor
Number of channels: 1
Mounting: THT
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Turn-off time: 5µs
Kind of output: transistor
Number of channels: 1
Mounting: THT
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 5µs
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.38 грн |
| H11D1SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Turn-off time: 5µs
Kind of output: transistor
Number of channels: 1
Mounting: SMD
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
Case: PDIP6
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Turn-off time: 5µs
Kind of output: transistor
Number of channels: 1
Mounting: SMD
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
Case: PDIP6
Turn-on time: 5µs
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.31 грн |
| 10+ | 47.17 грн |
| 50+ | 40.12 грн |
| 100+ | 37.10 грн |
| 200+ | 34.16 грн |
| 500+ | 32.82 грн |
| H11D1SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Turn-off time: 5µs
Kind of output: transistor
Number of channels: 1
Mounting: SMD
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
Case: PDIP6
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Turn-off time: 5µs
Kind of output: transistor
Number of channels: 1
Mounting: SMD
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
CTR@If: 20%@10mA
Collector-emitter voltage: 300V
Insulation voltage: 4.17kV
Case: PDIP6
Turn-on time: 5µs
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| NCP1246ALD065R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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| MC74HC20ADG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Number of channels: dual; 2
Family: HC
Kind of gate: NAND
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Number of inputs: 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Number of channels: dual; 2
Family: HC
Kind of gate: NAND
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Number of inputs: 4
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| MC74HC20ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Number of channels: dual; 2
Family: HC
Kind of gate: NAND
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Number of inputs: 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Number of channels: dual; 2
Family: HC
Kind of gate: NAND
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Number of inputs: 4
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| MC74HC20ADTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Number of channels: dual; 2
Family: HC
Kind of gate: NAND
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Number of inputs: 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Number of channels: dual; 2
Family: HC
Kind of gate: NAND
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Number of inputs: 4
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| CNY173SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
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| CNY173TVM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
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| CNY173VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
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| MOC8106SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Mounting: SMD
Type of optocoupler: optocoupler
Case: SMD6
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 3µs
Collector current: 50mA
Number of channels: 1
Number of pins: 6
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Insulation voltage: 4.17kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Mounting: SMD
Type of optocoupler: optocoupler
Case: SMD6
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 3µs
Collector current: 50mA
Number of channels: 1
Number of pins: 6
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Insulation voltage: 4.17kV
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 15.00 грн |
| SS26 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: SMB
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| SS26 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.7V
Power dissipation: 1.3W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.7V
Power dissipation: 1.3W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: SMB
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| 1SMB5949BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 12 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 35.25 грн |
| SZ1SMB5949BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
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| NTMFS006N12MCT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 93A; Idm: 522A; 41W; DFN5
Kind of package: reel; tape
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 93A
Gate charge: 42nC
On-state resistance: 6mΩ
Power dissipation: 41W
Gate-source voltage: ±20V
Pulsed drain current: 522A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 93A; Idm: 522A; 41W; DFN5
Kind of package: reel; tape
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 93A
Gate charge: 42nC
On-state resistance: 6mΩ
Power dissipation: 41W
Gate-source voltage: ±20V
Pulsed drain current: 522A
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| NTMFS006N08MC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 216A; 78W; PQFN8
Kind of package: reel; tape
Case: PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Gate charge: 30nC
On-state resistance: 6mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Pulsed drain current: 216A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 216A; 78W; PQFN8
Kind of package: reel; tape
Case: PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Gate charge: 30nC
On-state resistance: 6mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Pulsed drain current: 216A
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| KSC3265YMTF |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.8A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Current gain: 160...320
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.8A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Current gain: 160...320
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
на замовлення 1394 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.46 грн |
| 52+ | 8.14 грн |
| 73+ | 5.76 грн |
| 100+ | 4.99 грн |
| 500+ | 3.64 грн |
| 1000+ | 3.21 грн |
| NCV8730BMTW1500TBG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 15V; 0.15A; WDFNW6; SMD
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Case: WDFNW6
Output current: 0.15A
Number of channels: 1
Output voltage: 15V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 15V; 0.15A; WDFNW6; SMD
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Case: WDFNW6
Output current: 0.15A
Number of channels: 1
Output voltage: 15V
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| FDMC8321LDC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Pulsed drain current: 320A
Power dissipation: 56W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Pulsed drain current: 320A
Power dissipation: 56W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NCP361SNT1G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Application: USB
Number of channels: 1
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Kind of output: transistor
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Application: USB
Number of channels: 1
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Kind of output: transistor
Type of integrated circuit: driver
на замовлення 1883 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 49.71 грн |
| 12+ | 36.93 грн |
| 14+ | 31.47 грн |
| 25+ | 28.03 грн |
| 50+ | 27.02 грн |
| NCP711ASN300T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Case: TSOP5
Mounting: SMD
Output current: 0.1A
Output voltage: 3V
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Case: TSOP5
Mounting: SMD
Output current: 0.1A
Output voltage: 3V
Type of integrated circuit: voltage regulator
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 56.04 грн |
| 12+ | 36.17 грн |
| 25+ | 32.90 грн |
| 100+ | 29.88 грн |
| M74VHC1G126DTT1G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Number of channels: 1
Manufacturer series: VHC
Kind of package: reel; tape
Case: TSOP5
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Number of channels: 1
Manufacturer series: VHC
Kind of package: reel; tape
Case: TSOP5
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Type of integrated circuit: digital
на замовлення 1 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 451.91 грн |
| NCP551SN50T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP551
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Output current: 10mA
Voltage drop: 0.15V
Tolerance: ±2%
Input voltage: 12V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP551
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Output current: 10mA
Voltage drop: 0.15V
Tolerance: ±2%
Input voltage: 12V
Output voltage: 5V
Type of integrated circuit: voltage regulator
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.83 грн |
| 23+ | 18.80 грн |
| 25+ | 17.46 грн |
| 100+ | 15.44 грн |
| 250+ | 14.10 грн |
| 500+ | 13.18 грн |
| 1000+ | 12.17 грн |
| 3000+ | 10.66 грн |
| NCP115ASN330T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP115
Kind of package: reel; tape
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP115
Kind of package: reel; tape
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
на замовлення 2988 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.52 грн |
| 110+ | 3.83 грн |
| 130+ | 3.24 грн |
| 250+ | 2.82 грн |
| 500+ | 2.56 грн |
| 1000+ | 2.39 грн |
| BD241CG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 2.5
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 2.5
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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| NTBG014N120M3P |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 106A
Pulsed drain current: 452A
Power dissipation: 326W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 377nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 106A
Pulsed drain current: 452A
Power dissipation: 326W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 377nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| NTH4L014N120M3P |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 107A
Pulsed drain current: 407A
Power dissipation: 343W
Case: TO247-4
Gate-source voltage: -10...22V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 322nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 107A
Pulsed drain current: 407A
Power dissipation: 343W
Case: TO247-4
Gate-source voltage: -10...22V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 322nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| BD787G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
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| BCX19LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
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| BCW71 |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
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| FDD850N10L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1725 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.19 грн |
| 6+ | 70.83 грн |
| 10+ | 63.53 грн |
| 25+ | 54.64 грн |
| 100+ | 45.15 грн |
| FDD86102LZ |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 1286 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 139.19 грн |
| 5+ | 104.91 грн |
| 10+ | 92.32 грн |
| 50+ | 66.30 грн |
| 75+ | 61.27 грн |
| 100+ | 58.75 грн |
| 250+ | 54.55 грн |






























