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SBC856BLT3G SBC856BLT3G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MMSZ15T1G MMSZ15T1G ONSEMI MMSZxxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
на замовлення 6160 шт:
термін постачання 21-30 дні (днів)
50+8.87 грн
57+7.25 грн
65+6.34 грн
97+4.27 грн
118+3.52 грн
500+2.26 грн
1000+1.89 грн
3000+1.55 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
MMSZ5245BT1G MMSZ5245BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 254 шт:
термін постачання 21-30 дні (днів)
50+8.87 грн
70+5.93 грн
106+3.89 грн
129+3.21 грн
250+2.52 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
MM3Z15VST1G MM3Z15VST1G ONSEMI MM3ZxxST1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 493 шт:
термін постачання 21-30 дні (днів)
72+6.21 грн
100+4.12 грн
125+3.30 грн
261+1.58 грн
311+1.33 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BZX79C15 BZX79C15 ONSEMI BZX79C.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 50nA
на замовлення 840 шт:
термін постачання 21-30 дні (днів)
56+7.99 грн
81+5.11 грн
110+3.76 грн
500+1.40 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
MURF1620CTG ONSEMI murf1620ct-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns
Mounting: THT
Reverse recovery time: 25ns
Load current: 16A
Max. off-state voltage: 200V
Max. forward impulse current: 100A
Semiconductor structure: common cathode; double
Case: TO220FP
Type of diode: rectifying
Kind of package: tube
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
4+133.10 грн
5+100.52 грн
10+88.99 грн
50+68.39 грн
Мінімальне замовлення: 4
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N24RF16DTPT3G ONSEMI N24RF16-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C,RF; 2kx8bit/512x32bit; 1MHz
Mounting: SMD
Operating temperature: -40...105°C
Access time: 400ns
Operating voltage: 1.8...5.5V
Memory: 16kb EEPROM
Clock frequency: 1MHz
Memory organisation: 2kx8bit/512x32bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: I2C; RF
Case: TSSOP8
Kind of package: reel; tape
Kind of interface: serial
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CAT25640YI-GT3 ONSEMI CAT25640-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25640VI-GT3 ONSEMI CAT25640-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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NC7SB3157P6X NC7SB3157P6X ONSEMI NC7SB3157P6X.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70-6; 10uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 1
Kind of output: SPDT
на замовлення 10505 шт:
термін постачання 21-30 дні (днів)
32+14.20 грн
44+9.39 грн
52+8.01 грн
100+6.23 грн
250+5.19 грн
500+4.60 грн
1000+4.02 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
NLVASB3157DFT2G NLVASB3157DFT2G ONSEMI nlasb3157-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPDT
Number of channels: 1
Application: automotive industry
на замовлення 900 шт:
термін постачання 21-30 дні (днів)
17+26.35 грн
25+21.59 грн
100+18.87 грн
500+16.56 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
LM317D2TR4G ONSEMI lm317-d.pdf description Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LM317MBDTG LM317MBDTG ONSEMI LM317M.PDF Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 1.2...40V
на замовлення 740 шт:
термін постачання 21-30 дні (днів)
19+23.96 грн
23+18.13 грн
28+15.24 грн
75+11.78 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
NVMYS005N10MCLTWG ONSEMI nvmys005n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 736A; 65W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Pulsed drain current: 736A
Power dissipation: 65W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQP4N80 FQP4N80 ONSEMI fqp4n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
4+103.00 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FQB4N80TM ONSEMI fqi4n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FQI4N80TU ONSEMI FAIRS46000-1.pdf?t.download=true&u=5oefqw fqi4n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
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MMBFJ175LT1G MMBFJ175LT1G ONSEMI MMBFJ175LT1G.pdf Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Polarisation: unipolar
Drain current: 7mA
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
на замовлення 1026 шт:
термін постачання 21-30 дні (днів)
15+30.17 грн
21+19.69 грн
28+14.91 грн
50+11.95 грн
100+9.72 грн
500+6.84 грн
1000+6.59 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
SMMBFJ175LT1G ONSEMI mmbfj175lt1-d.pdf Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -60mA
Power dissipation: 0.225W
Kind of channel: enhancement
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
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FQD12N20LTM FQD12N20LTM ONSEMI FQD12N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 21nC
On-state resistance: 0.32Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±20V
Drain-source voltage: 200V
Technology: QFET®
на замовлення 1382 шт:
термін постачання 21-30 дні (днів)
6+78.09 грн
8+58.50 грн
10+51.09 грн
25+42.35 грн
50+36.75 грн
100+32.13 грн
500+27.52 грн
Мінімальне замовлення: 6
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FQD12N20LTM-F085 FQD12N20LTM-F085 ONSEMI fqd12n20l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 21nC
On-state resistance: 0.28Ω
Kind of channel: enhancement
Drain current: 5.7A
Application: automotive industry
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 200V
Technology: QFET®
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FQD12N20TM FQD12N20TM ONSEMI fqu12n20-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 23nC
On-state resistance: 0.28Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 200V
Technology: QFET®
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FQU12N20TU ONSEMI fqu12n20-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: IPAK
Mounting: THT
Kind of package: tube
Gate charge: 23nC
On-state resistance: 0.28Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 200V
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FDMS004N08C ONSEMI fdms004n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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NTMFSC004N08MC ONSEMI ntmfsc004n08mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 136A; Idm: 487A; 127W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 136A
Pulsed drain current: 487A
Power dissipation: 127W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC007N08LC ONSEMI fdmc007n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS007N08LC ONSEMI fdms007n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC007N08LCDC ONSEMI fdmc007n08lcdc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Pulsed drain current: 339A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS007N08HLTAG ONSEMI nvtfs007n08hl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 71A
Pulsed drain current: 347A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS007N08HLTAG ONSEMI nvtfs007n08hl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 71A
Pulsed drain current: 347A
Power dissipation: 40W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDN327N FDN327N ONSEMI FDN327N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2305 шт:
термін постачання 21-30 дні (днів)
15+31.06 грн
20+21.42 грн
23+18.21 грн
50+12.52 грн
100+10.96 грн
500+8.57 грн
1000+8.07 грн
Мінімальне замовлення: 15
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NGTB40N120FL2WG NGTB40N120FL2WG ONSEMI ngtb40n120fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+481.83 грн
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NGTB40N120FL3WG NGTB40N120FL3WG ONSEMI ngtb40n120fl3w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+494.26 грн
3+434.23 грн
10+413.63 грн
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NTHL040N120SC1 NTHL040N120SC1 ONSEMI NTHL040N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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NVBG040N120SC1 ONSEMI nvbg040n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NTBG040N120SC1 ONSEMI ntbg040n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NTHL040N120M3S ONSEMI nthl040n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
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NVHL040N120SC1 ONSEMI nvhl040n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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ESD8008MUTAG
+1
 		ESD8008MUTAG ONSEMI esd8008-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Kind of package: reel; tape
Version: ESD
Mounting: SMD
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.5V
Number of channels: 8
Case: uDFN14
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)
12+37.27 грн
13+32.79 грн
Мінімальне замовлення: 12
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MJF18008G ONSEMI mje18008-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Mounting: THT
Collector current: 8A
Current gain: 14...34
Power dissipation: 45W
Collector-emitter voltage: 450V
Frequency: 13MHz
Case: TO220FP
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
3+213.85 грн
10+121.12 грн
50+108.76 грн
Мінімальне замовлення: 3
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MC14043BDR2G MC14043BDR2G ONSEMI MC14043B-D.pdf Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: RS latch
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Family: HEF4000B
Kind of package: reel; tape
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MC14044BDR2G MC14044BDR2G ONSEMI MC14043B-D.pdf Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: SOIC16
Kind of package: reel; tape
Kind of integrated circuit: RS latch
Number of inputs: 2
Number of channels: 4
Supply voltage: 3...18V DC
Technology: CMOS
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MC14040BDG MC14040BDG ONSEMI MC14040B-D.pdf Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: SOIC16
Kind of package: tube
Kind of integrated circuit: 12bit; binary counter
Number of inputs: 2
Number of channels: 1
Supply voltage: 3...18V DC
Technology: CMOS
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MC14040BDR2G MC14040BDR2G ONSEMI mc14040b-d.pdf Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; CMOS; SMD; SO16; HEF4000B
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: SO16
Kind of integrated circuit: 12bit; binary counter
Supply voltage: 3...18V DC
Technology: CMOS
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MC14040BDTR2G ONSEMI MC14040B-D.pdf Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; TSSOP16
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: TSSOP16
Kind of package: reel; tape
Kind of integrated circuit: 12bit; binary counter
Number of inputs: 2
Number of channels: 1
Supply voltage: 3...18V DC
Technology: CMOS
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MC14042BDR2G MC14042BDR2G ONSEMI MC14042B-D.pdf Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: SOIC16
Kind of package: reel; tape
Kind of integrated circuit: latch
Number of channels: 4
Supply voltage: 3...18V DC
Technology: CMOS
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MC14049UBDR2G MC14049UBDR2G ONSEMI MC14049UB-D.pdf description Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Type of integrated circuit: digital
Case: SOIC16
Kind of package: reel; tape
Kind of integrated circuit: buffer; hex; inverter
Number of inputs: 1
Number of channels: 6
Supply voltage: 3...18V DC
Technology: CMOS
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MC14046BDWG ONSEMI mc14046b-d.pdf Category: Unclassified
Description: MC14046BDWG
на замовлення 2256 шт:
термін постачання 21-30 дні (днів)
47+39.84 грн
Мінімальне замовлення: 47
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NVMJD012N06CLTWG ONSEMI nvmjd012n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 153A
Power dissipation: 21W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 11.9mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMYS012N10MCLTWG ONSEMI nvmys012n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 283A
Power dissipation: 36W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C612NLAFT1G ONSEMI nvmfs5c612nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.36mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C612NLT1G ONSEMI nvmfs5c612nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.36mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C612NLWFAFT1G ONSEMI nvmfs5c612nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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NVMFS5C612NWFT1G ONSEMI nvmfs5c612n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 225A; Idm: 900A; 83W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 225A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C612NLWFAFT1G ONSEMI nvmfs5c612nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
1500+192.56 грн
Мінімальне замовлення: 1500
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NCP59748MN2ADJTBG ONSEMI ncp59748-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 1.5A
Manufacturer series: NCP59748
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.165V
Output voltage: 0.8...3.6V
Input voltage: 0.8...5.5V
Number of channels: 4
Output current: 1.5A
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±2%
Case: QFN20
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NCP59748MN1ADJTBG ONSEMI ncp59748-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 1.5A
Manufacturer series: NCP59748
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.165V
Output voltage: 0.8...3.6V
Input voltage: 0.8...5.5V
Number of channels: 2
Output current: 1.5A
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±2%
Case: DFN10
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NCV59748MLADJTBG ONSEMI ncv59748-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 1.5A; SMD
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: 0.8...3.6V
Number of channels: 1
Output current: 1.5A
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
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NCV59748MNADJTBG ONSEMI ncv59748-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 1.5A
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: 0.8...3.6V
Number of channels: 1
Output current: 1.5A
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Case: DFN10
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NCV59748MWADJTBG ONSEMI ncv59748-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 1.5A
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: 0.8...3.6V
Number of channels: 1
Output current: 1.5A
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Case: DFN10
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SBC856BLT3G BC856_7_8.PDF
SBC856BLT3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MMSZ15T1G MMSZxxxT1G.PDF
MMSZ15T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
на замовлення 6160 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.87 грн
57+7.25 грн
65+6.34 грн
97+4.27 грн
118+3.52 грн
500+2.26 грн
1000+1.89 грн
3000+1.55 грн
Мінімальне замовлення: 50
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MMSZ5245BT1G MMSZ52xxT1G.PDF
MMSZ5245BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 254 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.87 грн
70+5.93 грн
106+3.89 грн
129+3.21 грн
250+2.52 грн
Мінімальне замовлення: 50
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MM3Z15VST1G MM3ZxxST1G.PDF
MM3Z15VST1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 493 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.21 грн
100+4.12 грн
125+3.30 грн
261+1.58 грн
311+1.33 грн
Мінімальне замовлення: 72
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BZX79C15 BZX79C.PDF
BZX79C15
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 50nA
на замовлення 840 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.99 грн
81+5.11 грн
110+3.76 грн
500+1.40 грн
Мінімальне замовлення: 56
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MURF1620CTG murf1620ct-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns
Mounting: THT
Reverse recovery time: 25ns
Load current: 16A
Max. off-state voltage: 200V
Max. forward impulse current: 100A
Semiconductor structure: common cathode; double
Case: TO220FP
Type of diode: rectifying
Kind of package: tube
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+133.10 грн
5+100.52 грн
10+88.99 грн
50+68.39 грн
Мінімальне замовлення: 4
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N24RF16DTPT3G N24RF16-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C,RF; 2kx8bit/512x32bit; 1MHz
Mounting: SMD
Operating temperature: -40...105°C
Access time: 400ns
Operating voltage: 1.8...5.5V
Memory: 16kb EEPROM
Clock frequency: 1MHz
Memory organisation: 2kx8bit/512x32bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: I2C; RF
Case: TSSOP8
Kind of package: reel; tape
Kind of interface: serial
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CAT25640YI-GT3 CAT25640-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25640VI-GT3 CAT25640-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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NC7SB3157P6X NC7SB3157P6X.pdf
NC7SB3157P6X
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70-6; 10uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 1
Kind of output: SPDT
на замовлення 10505 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+14.20 грн
44+9.39 грн
52+8.01 грн
100+6.23 грн
250+5.19 грн
500+4.60 грн
1000+4.02 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
NLVASB3157DFT2G nlasb3157-d.pdf
NLVASB3157DFT2G
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPDT
Number of channels: 1
Application: automotive industry
на замовлення 900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.35 грн
25+21.59 грн
100+18.87 грн
500+16.56 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
LM317D2TR4G description lm317-d.pdf
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LM317MBDTG LM317M.PDF
LM317MBDTG
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 1.2...40V
на замовлення 740 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+23.96 грн
23+18.13 грн
28+15.24 грн
75+11.78 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
NVMYS005N10MCLTWG nvmys005n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 736A; 65W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Pulsed drain current: 736A
Power dissipation: 65W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQP4N80 fqp4n80-d.pdf
FQP4N80
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+103.00 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FQB4N80TM fqi4n80-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FQI4N80TU FAIRS46000-1.pdf?t.download=true&u=5oefqw fqi4n80-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
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MMBFJ175LT1G MMBFJ175LT1G.pdf
MMBFJ175LT1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Polarisation: unipolar
Drain current: 7mA
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
на замовлення 1026 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+30.17 грн
21+19.69 грн
28+14.91 грн
50+11.95 грн
100+9.72 грн
500+6.84 грн
1000+6.59 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
SMMBFJ175LT1G mmbfj175lt1-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -60mA
Power dissipation: 0.225W
Kind of channel: enhancement
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
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FQD12N20LTM FQD12N20L.pdf
FQD12N20LTM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 21nC
On-state resistance: 0.32Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±20V
Drain-source voltage: 200V
Technology: QFET®
на замовлення 1382 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+78.09 грн
8+58.50 грн
10+51.09 грн
25+42.35 грн
50+36.75 грн
100+32.13 грн
500+27.52 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FQD12N20LTM-F085 fqd12n20l-d.pdf
FQD12N20LTM-F085
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 21nC
On-state resistance: 0.28Ω
Kind of channel: enhancement
Drain current: 5.7A
Application: automotive industry
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 200V
Technology: QFET®
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FQD12N20TM fqu12n20-d.pdf
FQD12N20TM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 23nC
On-state resistance: 0.28Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 200V
Technology: QFET®
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FQU12N20TU fqu12n20-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 55W
Case: IPAK
Mounting: THT
Kind of package: tube
Gate charge: 23nC
On-state resistance: 0.28Ω
Kind of channel: enhancement
Drain current: 5.7A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 200V
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FDMS004N08C fdms004n08c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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NTMFSC004N08MC ntmfsc004n08mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 136A; Idm: 487A; 127W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 136A
Pulsed drain current: 487A
Power dissipation: 127W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC007N08LC fdmc007n08lc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS007N08LC fdms007n08lc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC007N08LCDC fdmc007n08lcdc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Pulsed drain current: 339A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS007N08HLTAG nvtfs007n08hl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 71A
Pulsed drain current: 347A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS007N08HLTAG nvtfs007n08hl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 71A
Pulsed drain current: 347A
Power dissipation: 40W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDN327N FDN327N.pdf
FDN327N
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2305 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+31.06 грн
20+21.42 грн
23+18.21 грн
50+12.52 грн
100+10.96 грн
500+8.57 грн
1000+8.07 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
NGTB40N120FL2WG ngtb40n120fl2w-d.pdf
NGTB40N120FL2WG
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+481.83 грн
В кошику  од. на суму  грн.
NGTB40N120FL3WG ngtb40n120fl3w-d.pdf
NGTB40N120FL3WG
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+494.26 грн
3+434.23 грн
10+413.63 грн
В кошику  од. на суму  грн.
NTHL040N120SC1 NTHL040N120SC1.PDF
NTHL040N120SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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NVBG040N120SC1 nvbg040n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NTBG040N120SC1 ntbg040n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NTHL040N120M3S nthl040n120m3s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
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NVHL040N120SC1 nvhl040n120sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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ESD8008MUTAG esd8008-d.pdf
ESD8008MUTAG
+1
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Kind of package: reel; tape
Version: ESD
Mounting: SMD
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.5V
Number of channels: 8
Case: uDFN14
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.27 грн
13+32.79 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
MJF18008G mje18008-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Mounting: THT
Collector current: 8A
Current gain: 14...34
Power dissipation: 45W
Collector-emitter voltage: 450V
Frequency: 13MHz
Case: TO220FP
на замовлення 177 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+213.85 грн
10+121.12 грн
50+108.76 грн
Мінімальне замовлення: 3
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MC14043BDR2G MC14043B-D.pdf
MC14043BDR2G
Виробник: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: RS latch
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Family: HEF4000B
Kind of package: reel; tape
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MC14044BDR2G MC14043B-D.pdf
MC14044BDR2G
Виробник: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: SOIC16
Kind of package: reel; tape
Kind of integrated circuit: RS latch
Number of inputs: 2
Number of channels: 4
Supply voltage: 3...18V DC
Technology: CMOS
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MC14040BDG MC14040B-D.pdf
MC14040BDG
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: SOIC16
Kind of package: tube
Kind of integrated circuit: 12bit; binary counter
Number of inputs: 2
Number of channels: 1
Supply voltage: 3...18V DC
Technology: CMOS
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MC14040BDR2G mc14040b-d.pdf
MC14040BDR2G
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; CMOS; SMD; SO16; HEF4000B
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: SO16
Kind of integrated circuit: 12bit; binary counter
Supply voltage: 3...18V DC
Technology: CMOS
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MC14040BDTR2G MC14040B-D.pdf
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; TSSOP16
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: TSSOP16
Kind of package: reel; tape
Kind of integrated circuit: 12bit; binary counter
Number of inputs: 2
Number of channels: 1
Supply voltage: 3...18V DC
Technology: CMOS
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MC14042BDR2G MC14042B-D.pdf
MC14042BDR2G
Виробник: ONSEMI
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Family: HEF4000B
Type of integrated circuit: digital
Case: SOIC16
Kind of package: reel; tape
Kind of integrated circuit: latch
Number of channels: 4
Supply voltage: 3...18V DC
Technology: CMOS
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MC14049UBDR2G description MC14049UB-D.pdf
MC14049UBDR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Type of integrated circuit: digital
Case: SOIC16
Kind of package: reel; tape
Kind of integrated circuit: buffer; hex; inverter
Number of inputs: 1
Number of channels: 6
Supply voltage: 3...18V DC
Technology: CMOS
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MC14046BDWG mc14046b-d.pdf
Виробник: ONSEMI
Category: Unclassified
Description: MC14046BDWG
на замовлення 2256 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
47+39.84 грн
Мінімальне замовлення: 47
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NVMJD012N06CLTWG nvmjd012n06cl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 153A
Power dissipation: 21W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 11.9mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMYS012N10MCLTWG nvmys012n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 283A
Power dissipation: 36W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C612NLAFT1G nvmfs5c612nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.36mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C612NLT1G nvmfs5c612nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.36mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C612NLWFAFT1G nvmfs5c612nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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NVMFS5C612NWFT1G nvmfs5c612n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 225A; Idm: 900A; 83W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 225A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C612NLWFAFT1G nvmfs5c612nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1500+192.56 грн
Мінімальне замовлення: 1500
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NCP59748MN2ADJTBG ncp59748-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 1.5A
Manufacturer series: NCP59748
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.165V
Output voltage: 0.8...3.6V
Input voltage: 0.8...5.5V
Number of channels: 4
Output current: 1.5A
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±2%
Case: QFN20
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NCP59748MN1ADJTBG ncp59748-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 1.5A
Manufacturer series: NCP59748
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.165V
Output voltage: 0.8...3.6V
Input voltage: 0.8...5.5V
Number of channels: 2
Output current: 1.5A
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±2%
Case: DFN10
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NCV59748MLADJTBG ncv59748-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 1.5A; SMD
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: 0.8...3.6V
Number of channels: 1
Output current: 1.5A
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
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NCV59748MNADJTBG ncv59748-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 1.5A
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: 0.8...3.6V
Number of channels: 1
Output current: 1.5A
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Case: DFN10
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NCV59748MWADJTBG ncv59748-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 1.5A
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: 0.8...3.6V
Number of channels: 1
Output current: 1.5A
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Case: DFN10
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