| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MC74AC138DR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: AC Family: AC Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74AC138DTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: AC Family: AC Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N5369BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 1N53xxB Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Type of diode: Zener Case: CASE017AA Kind of package: reel; tape Power dissipation: 5W Zener voltage: 51V Manufacturer series: 1N53xxB |
на замовлення 1915 шт: термін постачання 14-30 дні (днів) |
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| 1N5369BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 1N53xxB Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Type of diode: Zener Case: CASE017AA Kind of package: reel; tape Power dissipation: 5W Zener voltage: 51V Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5369BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 1N53xxB Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Type of diode: Zener Case: CASE017AA Kind of package: bulk Power dissipation: 5W Zener voltage: 51V Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR2060CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220-3; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.85V Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 20A |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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UAA2016PG | ONSEMI |
Category: Integrated circuits - othersDescription: IC: driver; AC/DC switcher; DIP8; 130mA; Ch: 1; 8÷10VDC Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher Case: DIP8 Output current: 0.13A Number of channels: 1 Supply voltage: 8...10V DC Mounting: THT Operating temperature: -20...85°C Integrated circuit features: zero voltage switching Application: thyristor triac trigger ciruit DC supply current: 1.5mA |
на замовлення 79 шт: термін постачання 14-30 дні (днів) |
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| NTMTSC4D3N15MC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8 Kind of package: reel; tape Case: TDFNW8 On-state resistance: 4.45mΩ Mounting: SMD Pulsed drain current: 900A Power dissipation: 293W Gate charge: 79nC Polarisation: unipolar Drain current: 174A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NVMTSC4D3N15MC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8 Kind of package: reel; tape Case: TDFNW8 On-state resistance: 4.45mΩ Mounting: SMD Pulsed drain current: 900A Power dissipation: 146W Gate charge: 79nC Polarisation: unipolar Drain current: 165A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVTFS015N04CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27A Pulsed drain current: 93A Power dissipation: 7.4W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.3mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTTFS015N04CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27A Pulsed drain current: 93A Power dissipation: 7.4W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.3mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
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2N5195G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 4A; 40W; TO225 Mounting: THT Collector-emitter voltage: 80V Power dissipation: 40W Polarisation: bipolar Type of transistor: PNP Current gain: 20...80 Kind of package: bulk Case: TO225 Frequency: 2MHz Collector current: 4A |
на замовлення 290 шт: термін постачання 14-30 дні (днів) |
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BD442G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 4A; 36W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 4A Power dissipation: 36W Case: TO225 Mounting: THT Kind of package: bulk Current gain: 40...475 Frequency: 3MHz |
на замовлення 87 шт: термін постачання 14-30 дні (днів) |
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MOCD213M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 100%@10mA Collector-emitter voltage: 70V Case: SO8 Turn-on time: 3µs Turn-off time: 2.8µs |
на замовлення 2191 шт: термін постачання 14-30 дні (днів) |
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KST10MTF | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.35W Case: SOT23 Current gain: 60 Mounting: SMD Frequency: 650MHz Kind of package: reel; tape |
на замовлення 853 шт: термін постачання 14-30 дні (днів) |
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MC74HC161ADG | ONSEMI |
Category: Counters/dividersDescription: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable Technology: CMOS Mounting: SMD Case: SOIC16 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: tube Manufacturer series: HC Number of inputs: 9 Number of channels: 1 |
на замовлення 63 шт: термін постачання 14-30 дні (днів) |
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| FDMT80060DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8 Kind of package: reel; tape Case: DFNW8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 238nC On-state resistance: 1.7mΩ Gate-source voltage: ±20V Drain-source voltage: 60V Power dissipation: 156W Drain current: 184A Pulsed drain current: 1825A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5363BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 1N53xxB Semiconductor structure: single diode Mounting: THT Type of diode: Zener Power dissipation: 5W Tolerance: ±5% Manufacturer series: 1N53xxB Zener voltage: 30V Kind of package: bulk Case: CASE017AA |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
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BAV23S | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Max. forward impulse current: 9A |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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BAV23CLT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 150ns Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape Features of semiconductor devices: fast switching |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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NSVBAV23CLT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 150ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ30A | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 35V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC157ADG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16 Type of integrated circuit: digital Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: tube Kind of integrated circuit: data selector; multiplexer Number of channels: 4 Manufacturer series: HC Technology: TTL Number of inputs: 2 Family: HC |
на замовлення 3385 шт: термін постачання 14-30 дні (днів) |
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| FDMQ8203 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100/-80V Drain current: 6/-6A Power dissipation: 2.5W Case: WDFN12 Gate-source voltage: ±20V On-state resistance: 323/191mΩ Mounting: SMD Gate charge: 19/5nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge Semiconductor structure: common drain |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMQ86530L | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12 Type of transistor: N-MOSFET x4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 22W Case: MLP12 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level; MOSFET H-Bridge Pulsed drain current: 50A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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NCV4264-2ST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.1A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 3.3V Kind of package: reel; tape Case: SOT223 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV4264-2CST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.1A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 3.3V Kind of package: reel; tape Case: SOT223 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA2126-TL-H | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 0.8W Case: TO252 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 390MHz |
на замовлення 915 шт: термін постачання 14-30 дні (днів) |
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ESD9X5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 0.15W; 6.2V; SOD923; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6.2V Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Peak pulse power dissipation: 0.15W Case: SOD923 |
на замовлення 6714 шт: термін постачання 14-30 дні (днів) |
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MMBT589LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.31/0.71W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1391 шт: термін постачання 14-30 дні (днів) |
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NSVMMBT589LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 0.31W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.31W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVBSS24NT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 75A Application: automotive industry Max. load current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB521S30T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape |
на замовлення 497 шт: термін постачання 14-30 дні (днів) |
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NSVRB521S30T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FDPC8016S | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 25V Drain current: 60/100A Power dissipation: 21/42W Case: PQFN8 On-state resistance: 3.8/1.4mΩ Mounting: SMD Gate charge: 25/67nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Semiconductor structure: asymmetric |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMC8015L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 18A Power dissipation: 24W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMC8010DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 99A Pulsed drain current: 788A Power dissipation: 50W Case: PQFN8 On-state resistance: 1.89mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCV4275ADS50R4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO Voltage drop: 0.5V Output voltage: 5V Output current: 0.45A Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Application: automotive industry Input voltage: 5.5...42V Manufacturer series: NCV4275A Integrated circuit features: RESET output |
на замовлення 1481 шт: термін постачання 14-30 дні (днів) |
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MRA4007T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.18V Max. load current: 30A Kind of package: reel; tape |
на замовлення 12556 шт: термін постачання 14-30 дні (днів) |
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NRVA4007T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: SMA Max. forward voltage: 1.18V Application: automotive industry Max. load current: 2A |
на замовлення 3962 шт: термін постачання 14-30 дні (днів) |
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SMBJ36A | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 42.1V; 100A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 42.1V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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LM2574DW-ADJR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Topology: buck Mounting: SMD Input voltage: 4.75...40V DC Output current: 0.5A Type of integrated circuit: PMIC Output voltage: 1.23...37V DC Kind of package: reel; tape Case: SO16-W Kind of integrated circuit: DC/DC converter Number of channels: 1 |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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LM2575T-3.3G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5 Input voltage: 4.75...40V DC Output voltage: 3.3V DC Output current: 1A Mounting: THT Operating temperature: -40...125°C Frequency: 42...63kHz Topology: buck Kind of integrated circuit: DC/DC converter Case: TO220-5 Type of integrated circuit: PMIC Kind of package: tube Number of channels: 1 |
на замовлення 41 шт: термін постачання 14-30 дні (днів) |
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MMBFJ111 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA On-state resistance: 30Ω Mounting: SMD Gate current: 50mA Power dissipation: 0.35W Polarisation: unipolar Drain current: 20mA Type of transistor: N-JFET Gate-source voltage: -35V Kind of package: reel; tape Case: SOT23 |
на замовлення 2925 шт: термін постачання 14-30 дні (днів) |
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J111 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA On-state resistance: 30Ω Mounting: THT Gate current: 50mA Power dissipation: 0.625W Polarisation: unipolar Drain current: 20mA Type of transistor: N-JFET Gate-source voltage: -35V Kind of package: bulk Case: TO92 |
на замовлення 3287 шт: термін постачання 14-30 дні (днів) |
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UJ4C075060K4S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 20.6A Pulsed drain current: 62A Power dissipation: 155W Case: TO247-4 Gate-source voltage: -25...25V On-state resistance: 147mΩ Mounting: THT Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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MMBFJ309LT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 30mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
на замовлення 7905 шт: термін постачання 14-30 дні (днів) |
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MMBFJ202 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA Mounting: SMD Gate current: 50mA Power dissipation: 0.35W Polarisation: unipolar Drain current: 900µA Type of transistor: N-JFET Gate-source voltage: -40V Kind of package: reel; tape Case: SOT23 |
на замовлення 1121 шт: термін постачання 14-30 дні (днів) |
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MMBFJ108 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA Power dissipation: 0.35W Kind of package: reel; tape Type of transistor: N-JFET Mounting: SMD Polarisation: unipolar Gate-source voltage: -25V Gate current: 10mA Drain current: 80mA On-state resistance: 8Ω Case: SuperSOT-3 |
на замовлення 1236 шт: термін постачання 14-30 дні (днів) |
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MMBF5103 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 10mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -40V Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
на замовлення 2692 шт: термін постачання 14-30 дні (днів) |
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FDC6333C | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.5/-2A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±16/±25V On-state resistance: 150/220mΩ Mounting: SMD Gate charge: 6.6/5.7nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Kind of transistor: complementary pair |
на замовлення 820 шт: термін постачання 14-30 дні (днів) |
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1N5931BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 18V; CASE59; single diode; reel,tape; 1N59xxB Mounting: THT Tolerance: ±5% Manufacturer series: 1N59xxB Power dissipation: 3W Kind of package: reel; tape Semiconductor structure: single diode Case: CASE59 Zener voltage: 18V Type of diode: Zener |
на замовлення 1372 шт: термін постачання 14-30 дні (днів) |
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NCP45525IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Kind of package: reel; tape Kind of output: N-Channel On-state resistance: 31.7mΩ Control voltage: 0.5...13.5V DC Number of channels: 1 Supply voltage: 3...5.5V DC Output current: 6A Type of integrated circuit: power switch Case: DFN8 Active logical level: high Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC4053ADR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; demultiplexer,multiplexer; Ch: 3; IN: 6; CMOS; SMD; SO16 Supply voltage: 2...6V DC Number of inputs: 6 Case: SO16 Family: HC Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 3 Mounting: SMD Manufacturer series: HC Type of integrated circuit: digital Kind of output: SP8T Operating temperature: -55...125°C Technology: CMOS |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MBR40L60CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO220AB; Ufmax: 0.74V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.74V Max. load current: 40A Max. forward impulse current: 0.24kA Kind of package: tube |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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sm05t1g | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; ESD; SOT23 Type of diode: TVS array Breakdown voltage: 6.7V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 5V Number of channels: 2 Kind of package: reel; tape Leakage current: 10µA Version: ESD Max. forward impulse current: 17A |
на замовлення 2911 шт: термін постачання 14-30 дні (днів) |
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| SZSM05T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 6.2...7.3V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 5V Number of channels: 2 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP1034DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 2A Frequency: 170...430kHz Mounting: SMD Case: SO16 Topology: buck Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 10...18V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC33179DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 5MHz; Ch: 4; ±2÷18VDC,4÷36VDC; TSSOP14 Type of integrated circuit: operational amplifier Bandwidth: 5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 2...18V DC; 4...36V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 2V/μs Integrated circuit features: low noise Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 600nA Input offset current: 60nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC33152VDR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SOIC8; 1.5A; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SOIC8 Output current: 1.5A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| MC74AC138DR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74AC138DTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 1N5369BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 1N53xxB
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Case: CASE017AA
Kind of package: reel; tape
Power dissipation: 5W
Zener voltage: 51V
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 1N53xxB
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Case: CASE017AA
Kind of package: reel; tape
Power dissipation: 5W
Zener voltage: 51V
Manufacturer series: 1N53xxB
на замовлення 1915 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.11 грн |
| 30+ | 14.04 грн |
| 1N5369BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 1N53xxB
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Case: CASE017AA
Kind of package: reel; tape
Power dissipation: 5W
Zener voltage: 51V
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 1N53xxB
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Case: CASE017AA
Kind of package: reel; tape
Power dissipation: 5W
Zener voltage: 51V
Manufacturer series: 1N53xxB
товару немає в наявності
В кошику
од. на суму грн.
| 1N5369BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 1N53xxB
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Case: CASE017AA
Kind of package: bulk
Power dissipation: 5W
Zener voltage: 51V
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 1N53xxB
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Case: CASE017AA
Kind of package: bulk
Power dissipation: 5W
Zener voltage: 51V
Manufacturer series: 1N53xxB
товару немає в наявності
В кошику
од. на суму грн.
| MBR2060CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220-3; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220-3; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 20A
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.45 грн |
| 10+ | 71.46 грн |
| UAA2016PG |
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Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: driver; AC/DC switcher; DIP8; 130mA; Ch: 1; 8÷10VDC
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher
Case: DIP8
Output current: 0.13A
Number of channels: 1
Supply voltage: 8...10V DC
Mounting: THT
Operating temperature: -20...85°C
Integrated circuit features: zero voltage switching
Application: thyristor triac trigger ciruit
DC supply current: 1.5mA
Category: Integrated circuits - others
Description: IC: driver; AC/DC switcher; DIP8; 130mA; Ch: 1; 8÷10VDC
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher
Case: DIP8
Output current: 0.13A
Number of channels: 1
Supply voltage: 8...10V DC
Mounting: THT
Operating temperature: -20...85°C
Integrated circuit features: zero voltage switching
Application: thyristor triac trigger ciruit
DC supply current: 1.5mA
на замовлення 79 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.55 грн |
| 10+ | 78.11 грн |
| 50+ | 73.96 грн |
| NTMTSC4D3N15MC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8
Kind of package: reel; tape
Case: TDFNW8
On-state resistance: 4.45mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 293W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 174A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8
Kind of package: reel; tape
Case: TDFNW8
On-state resistance: 4.45mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 293W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 174A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NVMTSC4D3N15MC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Kind of package: reel; tape
Case: TDFNW8
On-state resistance: 4.45mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 146W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 165A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Kind of package: reel; tape
Case: TDFNW8
On-state resistance: 4.45mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 146W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 165A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS015N04CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NTTFS015N04CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| 2N5195G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 4A; 40W; TO225
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 40W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...80
Kind of package: bulk
Case: TO225
Frequency: 2MHz
Collector current: 4A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 4A; 40W; TO225
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 40W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 20...80
Kind of package: bulk
Case: TO225
Frequency: 2MHz
Collector current: 4A
на замовлення 290 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 41.71 грн |
| 11+ | 38.47 грн |
| 50+ | 35.23 грн |
| BD442G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 4A; 36W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 40...475
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 4A; 36W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 40...475
Frequency: 3MHz
на замовлення 87 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 78.75 грн |
| 10+ | 48.11 грн |
| MOCD213M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.8µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.8µs
на замовлення 2191 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.69 грн |
| 12+ | 37.64 грн |
| 25+ | 34.49 грн |
| 30+ | 33.82 грн |
| 50+ | 32.08 грн |
| 100+ | 29.91 грн |
| 500+ | 24.60 грн |
| 1000+ | 22.27 грн |
| KST10MTF |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: SOT23
Current gain: 60
Mounting: SMD
Frequency: 650MHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: SOT23
Current gain: 60
Mounting: SMD
Frequency: 650MHz
Kind of package: reel; tape
на замовлення 853 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.58 грн |
| 152+ | 2.74 грн |
| 166+ | 2.51 грн |
| 500+ | 2.39 грн |
| MC74HC161ADG |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: HC
Number of inputs: 9
Number of channels: 1
Category: Counters/dividers
Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: HC
Number of inputs: 9
Number of channels: 1
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.59 грн |
| 14+ | 29.91 грн |
| 17+ | 24.60 грн |
| 25+ | 22.60 грн |
| 48+ | 20.61 грн |
| FDMT80060DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Kind of package: reel; tape
Case: DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 238nC
On-state resistance: 1.7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 156W
Drain current: 184A
Pulsed drain current: 1825A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Kind of package: reel; tape
Case: DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 238nC
On-state resistance: 1.7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 156W
Drain current: 184A
Pulsed drain current: 1825A
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| 1N5363BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.53 грн |
| 18+ | 23.77 грн |
| 20+ | 21.61 грн |
| 100+ | 14.96 грн |
| BAV23S |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 9A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 9A
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 23.27 грн |
| BAV23CLT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 21.61 грн |
| NSVBAV23CLT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
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| SMBJ30A |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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Мінімальне замовлення: 3 шт
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| MC74HC157ADG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Manufacturer series: HC
Technology: TTL
Number of inputs: 2
Family: HC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Manufacturer series: HC
Technology: TTL
Number of inputs: 2
Family: HC
на замовлення 3385 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.74 грн |
| 20+ | 21.61 грн |
| 22+ | 19.44 грн |
| 25+ | 16.95 грн |
| 48+ | 15.71 грн |
| 96+ | 14.87 грн |
| 144+ | 14.54 грн |
| 192+ | 14.29 грн |
| 288+ | 13.96 грн |
| FDMQ8203 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Gate charge: 19/5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Gate charge: 19/5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Semiconductor structure: common drain
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| FDMQ86530L |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Pulsed drain current: 50A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Pulsed drain current: 50A
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Мінімальне замовлення: 3000 шт
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| NCV4264-2ST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
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| NCV4264-2CST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
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| 2SA2126-TL-H |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.8W
Case: TO252
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.8W
Case: TO252
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
на замовлення 915 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.11 грн |
| 19+ | 22.60 грн |
| 25+ | 19.94 грн |
| 100+ | 17.95 грн |
| 700+ | 16.87 грн |
| ESD9X5.0ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 6.2V; SOD923; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Case: SOD923
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 6.2V; SOD923; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Case: SOD923
на замовлення 6714 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 84+ | 4.99 грн |
| 97+ | 4.32 грн |
| 143+ | 2.92 грн |
| 174+ | 2.40 грн |
| 250+ | 1.84 грн |
| 500+ | 1.64 грн |
| 1000+ | 1.58 грн |
| MMBT589LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1391 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.11 грн |
| 18+ | 24.43 грн |
| 20+ | 21.52 грн |
| 50+ | 18.70 грн |
| 100+ | 18.03 грн |
| 500+ | 17.03 грн |
| 1000+ | 13.71 грн |
| NSVMMBT589LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.31W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.31W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| NRVBSS24NT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 75A
Application: automotive industry
Max. load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 75A
Application: automotive industry
Max. load current: 3A
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| RB521S30T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 497 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.95 грн |
| 76+ | 5.48 грн |
| 118+ | 3.52 грн |
| 141+ | 2.97 грн |
| NSVRB521S30T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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| FDPC8016S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60/100A
Power dissipation: 21/42W
Case: PQFN8
On-state resistance: 3.8/1.4mΩ
Mounting: SMD
Gate charge: 25/67nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60/100A
Power dissipation: 21/42W
Case: PQFN8
On-state resistance: 3.8/1.4mΩ
Mounting: SMD
Gate charge: 25/67nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Semiconductor structure: asymmetric
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| FDMC8015L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 24W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 24W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 30A
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| FDMC8010DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 99A
Pulsed drain current: 788A
Power dissipation: 50W
Case: PQFN8
On-state resistance: 1.89mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 99A
Pulsed drain current: 788A
Power dissipation: 50W
Case: PQFN8
On-state resistance: 1.89mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| NCV4275ADS50R4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.45A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 5.5...42V
Manufacturer series: NCV4275A
Integrated circuit features: RESET output
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.45A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 5.5...42V
Manufacturer series: NCV4275A
Integrated circuit features: RESET output
на замовлення 1481 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 117.23 грн |
| 10+ | 88.08 грн |
| MRA4007T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
на замовлення 12556 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.90 грн |
| 42+ | 10.05 грн |
| 59+ | 7.11 грн |
| 100+ | 6.28 грн |
| 250+ | 5.45 грн |
| 500+ | 4.84 грн |
| 1000+ | 4.24 грн |
| 2500+ | 3.77 грн |
| NRVA4007T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SMA
Max. forward voltage: 1.18V
Application: automotive industry
Max. load current: 2A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SMA
Max. forward voltage: 1.18V
Application: automotive industry
Max. load current: 2A
на замовлення 3962 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.84 грн |
| 73+ | 5.73 грн |
| 100+ | 4.81 грн |
| 500+ | 4.27 грн |
| SMBJ36A |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 42.1V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 42.1V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 42.1V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 42.1V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| LM2574DW-ADJR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Topology: buck
Mounting: SMD
Input voltage: 4.75...40V DC
Output current: 0.5A
Type of integrated circuit: PMIC
Output voltage: 1.23...37V DC
Kind of package: reel; tape
Case: SO16-W
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Topology: buck
Mounting: SMD
Input voltage: 4.75...40V DC
Output current: 0.5A
Type of integrated circuit: PMIC
Output voltage: 1.23...37V DC
Kind of package: reel; tape
Case: SO16-W
Kind of integrated circuit: DC/DC converter
Number of channels: 1
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.45 грн |
| LM2575T-3.3G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 42...63kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Type of integrated circuit: PMIC
Kind of package: tube
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 42...63kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Type of integrated circuit: PMIC
Kind of package: tube
Number of channels: 1
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 141.39 грн |
| 10+ | 121.32 грн |
| MMBFJ111 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA
On-state resistance: 30Ω
Mounting: SMD
Gate current: 50mA
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 20mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: reel; tape
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA
On-state resistance: 30Ω
Mounting: SMD
Gate current: 50mA
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 20mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: reel; tape
Case: SOT23
на замовлення 2925 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.69 грн |
| 16+ | 26.59 грн |
| 19+ | 22.35 грн |
| 50+ | 14.46 грн |
| 100+ | 12.22 грн |
| 500+ | 9.14 грн |
| J111 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
On-state resistance: 30Ω
Mounting: THT
Gate current: 50mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 20mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: bulk
Case: TO92
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
On-state resistance: 30Ω
Mounting: THT
Gate current: 50mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 20mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: bulk
Case: TO92
на замовлення 3287 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.53 грн |
| 36+ | 11.80 грн |
| 39+ | 10.80 грн |
| 50+ | 9.14 грн |
| 100+ | 8.56 грн |
| 250+ | 8.14 грн |
| UJ4C075060K4S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 155W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 147mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 155W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 147mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 793.76 грн |
| 5+ | 652.31 грн |
| 10+ | 584.17 грн |
| 30+ | 553.42 грн |
| MMBFJ309LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 7905 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.11 грн |
| 35+ | 11.97 грн |
| 40+ | 10.47 грн |
| 48+ | 8.81 грн |
| 53+ | 7.89 грн |
| 100+ | 7.15 грн |
| 250+ | 6.90 грн |
| MMBFJ202 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA
Mounting: SMD
Gate current: 50mA
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 900µA
Type of transistor: N-JFET
Gate-source voltage: -40V
Kind of package: reel; tape
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA
Mounting: SMD
Gate current: 50mA
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 900µA
Type of transistor: N-JFET
Gate-source voltage: -40V
Kind of package: reel; tape
Case: SOT23
на замовлення 1121 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.43 грн |
| 19+ | 22.10 грн |
| 22+ | 18.95 грн |
| 100+ | 10.97 грн |
| 500+ | 7.89 грн |
| 1000+ | 7.48 грн |
| MMBFJ108 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Power dissipation: 0.35W
Kind of package: reel; tape
Type of transistor: N-JFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -25V
Gate current: 10mA
Drain current: 80mA
On-state resistance: 8Ω
Case: SuperSOT-3
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Power dissipation: 0.35W
Kind of package: reel; tape
Type of transistor: N-JFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -25V
Gate current: 10mA
Drain current: 80mA
On-state resistance: 8Ω
Case: SuperSOT-3
на замовлення 1236 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.22 грн |
| 11+ | 39.06 грн |
| 13+ | 34.32 грн |
| 50+ | 23.27 грн |
| 100+ | 19.61 грн |
| 250+ | 15.87 грн |
| 500+ | 15.62 грн |
| MMBF5103 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 2692 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.64 грн |
| 23+ | 18.61 грн |
| 28+ | 14.96 грн |
| 50+ | 12.71 грн |
| 100+ | 10.89 грн |
| 500+ | 8.14 грн |
| 1000+ | 7.81 грн |
| FDC6333C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Kind of transistor: complementary pair
на замовлення 820 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.85 грн |
| 10+ | 44.21 грн |
| 11+ | 38.47 грн |
| 50+ | 27.34 грн |
| 100+ | 23.68 грн |
| 500+ | 17.45 грн |
| 1N5931BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; CASE59; single diode; reel,tape; 1N59xxB
Mounting: THT
Tolerance: ±5%
Manufacturer series: 1N59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE59
Zener voltage: 18V
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; CASE59; single diode; reel,tape; 1N59xxB
Mounting: THT
Tolerance: ±5%
Manufacturer series: 1N59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE59
Zener voltage: 18V
Type of diode: Zener
на замовлення 1372 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.58 грн |
| 34+ | 12.30 грн |
| 50+ | 9.47 грн |
| 100+ | 8.56 грн |
| 500+ | 7.15 грн |
| NCP45525IMNTWG-H |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: high
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: high
Kind of integrated circuit: high-side
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC4053ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 3; IN: 6; CMOS; SMD; SO16
Supply voltage: 2...6V DC
Number of inputs: 6
Case: SO16
Family: HC
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 3
Mounting: SMD
Manufacturer series: HC
Type of integrated circuit: digital
Kind of output: SP8T
Operating temperature: -55...125°C
Technology: CMOS
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 3; IN: 6; CMOS; SMD; SO16
Supply voltage: 2...6V DC
Number of inputs: 6
Case: SO16
Family: HC
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 3
Mounting: SMD
Manufacturer series: HC
Type of integrated circuit: digital
Kind of output: SP8T
Operating temperature: -55...125°C
Technology: CMOS
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MBR40L60CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO220AB; Ufmax: 0.74V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.74V
Max. load current: 40A
Max. forward impulse current: 0.24kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO220AB; Ufmax: 0.74V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.74V
Max. load current: 40A
Max. forward impulse current: 0.24kA
Kind of package: tube
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 161.08 грн |
| 5+ | 120.49 грн |
| 10+ | 106.36 грн |
| sm05t1g |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Number of channels: 2
Kind of package: reel; tape
Leakage current: 10µA
Version: ESD
Max. forward impulse current: 17A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Number of channels: 2
Kind of package: reel; tape
Leakage current: 10µA
Version: ESD
Max. forward impulse current: 17A
на замовлення 2911 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.90 грн |
| 33+ | 12.96 грн |
| 37+ | 11.38 грн |
| 45+ | 9.34 грн |
| 100+ | 6.86 грн |
| 250+ | 5.65 грн |
| 500+ | 4.95 грн |
| 1000+ | 4.50 грн |
| SZSM05T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.2...7.3V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.2...7.3V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| NCP1034DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC33179DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; ±2÷18VDC,4÷36VDC; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 2...18V DC; 4...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 2V/μs
Integrated circuit features: low noise
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 600nA
Input offset current: 60nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; ±2÷18VDC,4÷36VDC; TSSOP14
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 2...18V DC; 4...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 2V/μs
Integrated circuit features: low noise
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 600nA
Input offset current: 60nA
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В кошику
од. на суму грн.
| MC33152VDR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...85°C
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.




































