| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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1N958B | onsemi |
Description: DIODE ZENER 7.5V 500MW DO35Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 5.5 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 75 µA @ 5.7 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| KAI-2093-12-20-A-EVK | onsemi |
Description: EVAL KIT IMAGE SENSOR CCD INTERL Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: KAI-2093 Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N757A | onsemi |
Description: DIODE ZENER 9.1V 500MW DO35Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSVBASH20MX2WT5G | onsemi |
Description: 100V & 200V SW DIODE IN X2DFNW2Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: 2-X2DFNW (1x0.6) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V Qualification: AEC-Q101 |
на замовлення 104000 шт: термін постачання 21-31 дні (днів) |
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NSVBASH20MX2WT5G | onsemi |
Description: 100V & 200V SW DIODE IN X2DFNW2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: 2-X2DFNW (1x0.6) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V Qualification: AEC-Q101 |
на замовлення 111990 шт: термін постачання 21-31 дні (днів) |
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NDF02N60ZG | onsemi |
Description: MOSFET N-CH 600V 2.4A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLV74HC00ADTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
на замовлення 412404 шт: термін постачання 21-31 дні (днів) |
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NTS4172NT1G | onsemi |
Description: MOSFET N-CH 30V 1.6A SC70-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 93mOhm @ 1.7A, 10V Power Dissipation (Max): 294mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SC-70-3 (SOT323) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.38 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 381 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| LC706200CM | onsemi |
Description: IC REG LINEAR MEMS MIC DIG SCS3 Packaging: Bulk |
на замовлення 24900 шт: термін постачання 21-31 дні (днів) |
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FDG410NZ | onsemi |
Description: MOSFET N-CH 20V 2.2A SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.2A, 4.5V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDG410NZ | onsemi |
Description: MOSFET N-CH 20V 2.2A SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.2A, 4.5V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STK760-712A-E | onsemi |
Description: IC PFC CTRLR HYBRID INVERTER Packaging: Tube |
на замовлення 13525 шт: термін постачання 21-31 дні (днів) |
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| STK760-712A-E | onsemi |
Description: IC PFC CTRLR HYBRID INVERTER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NRTS1560PFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 15A TO2773Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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NRTS1560PFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 15A TO2773Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 60 V |
на замовлення 2852 шт: термін постачання 21-31 дні (днів) |
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NRTS6100PFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 6A TO2773Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 827pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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NRTS6100PFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 6A TO2773Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 827pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 4840 шт: термін постачання 21-31 дні (днів) |
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NRTS860PFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 8A TO277-3Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 870pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A Current - Reverse Leakage @ Vr: 70 µA @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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NRTS860PFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 8A TO277-3Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 870pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A Current - Reverse Leakage @ Vr: 70 µA @ 60 V |
на замовлення 4950 шт: термін постачання 21-31 дні (днів) |
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NRVTS1260PFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 12A TO277-3Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1180pf @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A Current - Reverse Leakage @ Vr: 350 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NRVTS1260PFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 12A TO277-3Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1180pf @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A Current - Reverse Leakage @ Vr: 350 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 19745 шт: термін постачання 21-31 дні (днів) |
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NRVTS1560PFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 15A TO2773Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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NRVTS1560PFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 15A TO2773Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 1400pF @ 1V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 4971 шт: термін постачання 21-31 дні (днів) |
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NRVTS6100PFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 6A TO2773Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 827pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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NRVTS6100PFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 6A TO2773Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 827pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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NRTS12100PFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 12A TO277-3Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 930pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A Current - Reverse Leakage @ Vr: 120 µA @ 100 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NRTS12100PFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 12A TO277-3Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 930pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A Current - Reverse Leakage @ Vr: 120 µA @ 100 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NRVTS3060MFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 30A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3140pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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NRVTS3060MFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 30A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3140pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 1511 шт: термін постачання 21-31 дні (днів) |
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74FST3245DWR2 | onsemi |
Description: IC BUS SWITCH 8 X 1:1 20SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 8 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 20-SOIC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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74FST3244DWR2 | onsemi |
Description: IC BUS SWITCH 4 X 1:1 20SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74FST3244DTR2 | onsemi |
Description: IC BUS SWITCH 4 X 1:1 20TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 20-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74FST3383DWR2 | onsemi |
Description: IC BUS FET EXCHG SW 5X2:2 24SOICPackaging: Bulk Package / Case: 24-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 5 x 2:2 Type: Bus FET Exchange Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 24-SOIC |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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KBP01M | onsemi |
Description: BRIDGE RECT 1P 100V 1.5A KBPMPackaging: Tube Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 165°C (TJ) Technology: Standard Supplier Device Package: KBPM Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MV2101G | onsemi |
Description: DIODE TUNING 30V 6.8PF TO92-2Capacitance Ratio: 3.2 Voltage - Peak Reverse (Max): 30 V Supplier Device Package: TO-92 Capacitance Ratio Condition: C2/C30 Q @ Vr, F: 450 @ 4V, 50MHz Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: Single Mounting Type: Through Hole Package / Case: TO-226-2, TO-92-2 (TO-226AC) Packaging: Bulk |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MC7924CT | onsemi |
Description: IC REG LINEAR -24V 1A TO220ABPackaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -40V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): -24V PSRR: 56dB (120Hz) Voltage Dropout (Max): 1.3V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
на замовлення 25875 шт: термін постачання 21-31 дні (днів) |
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MC7924CTG | onsemi |
Description: IC REG LINEAR -24V 1A TO220ABPackaging: Bulk Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -40V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): -24V PSRR: 56dB (120Hz) Voltage Dropout (Max): 1.3V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
на замовлення 14703 шт: термін постачання 21-31 дні (днів) |
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| 2N2369 | onsemi |
Description: TRANS NPN 15V 0.2A TO-18Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 360 mW |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||||||
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SMMBD2837LT1G | onsemi |
Description: DIODE ARRAY GP 30V 150MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SMMBD2837LT1G | onsemi |
Description: DIODE ARRAY GP 30V 150MA SOT23-3Current - Reverse Leakage @ Vr: 100 nA @ 30 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io) (per Diode): 150mA Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBD2835LT1 | onsemi |
Description: DIODE SWITCH DUAL 35V SOT23Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 24000 шт В кошику од. на суму грн. | ||||||||||||||||
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SMMBD2835LT1G | onsemi |
Description: DIODE ARRAY GP 35V 100MA SOT23-3Current - Reverse Leakage @ Vr: 100 nA @ 30 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 35 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io) (per Diode): 100mA (DC) Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT28LV65W25 | onsemi |
Description: IC EEPROM 64KBIT PARALLEL 28SOICPackaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: Parallel Access Time: 250 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 199 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NWFTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NWFTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 33515 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 7480 шт: термін постачання 21-31 дні (днів) |
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P6SMB68AT3 | onsemi |
Description: TVS DIODE 58.1VWM 92VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 305pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.5A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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P6SMB68AT3 | onsemi |
Description: TVS DIODE 58.1VWM 92VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 305pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.5A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LA72715V-TLM-E | onsemi |
Description: JPN MTS (MULTI CHANNEL TELEVISIOPackaging: Bulk |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| AS0140AT2C00XUSM0-TRBR | onsemi |
Description: 1MP 1/4 CIS SOCPackaging: Tape & Reel (TR) Package / Case: 130-LFBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 130-IBGA (8.5x8.5) Grade: Automotive Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| AS0140AT2C00XUSM0-TRBR | onsemi |
Description: 1MP 1/4 CIS SOCPackaging: Cut Tape (CT) Package / Case: 130-LFBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 130-IBGA (8.5x8.5) Grade: Automotive Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| AS0140AT2C00XUSM0-TPBR | onsemi |
Description: 1MP 1/4 CIS SOCPackaging: Tape & Reel (TR) Package / Case: 130-LFBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 130-IBGA (8.5x8.5) Grade: Automotive Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| AS0140AT2C00XUSM0-TPBR | onsemi |
Description: 1MP 1/4 CIS SOCPackaging: Cut Tape (CT) Package / Case: 130-LFBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 130-IBGA (8.5x8.5) Grade: Automotive Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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MAC12HCM | onsemi |
Description: TRIAC 600V 12A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220 Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 23243 шт: термін постачання 21-31 дні (днів) |
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KSH45H11ITU | onsemi |
Description: TRANS PNP 80V 8A IPAKPackaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: IPAK Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
на замовлення 70302 шт: термін постачання 21-31 дні (днів) |
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KSH45H11TM | onsemi |
Description: TRANS PNP 80V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KSH45H11TM | onsemi |
Description: TRANS PNP 80V 8A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
на замовлення 4336 шт: термін постачання 21-31 дні (днів) |
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SZBZX84B9V1LT3G | onsemi |
Description: DIODE ZENER 9.1V 250MW SOT23-3Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 6 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84B9V1LT3G | onsemi |
Description: DIODE ZENER 9.1V 250MW SOT23-3Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 6 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| 1N958B |
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Виробник: onsemi
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 75 µA @ 5.7 V
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 75 µA @ 5.7 V
товару немає в наявності
В кошику
од. на суму грн.
| KAI-2093-12-20-A-EVK |
Виробник: onsemi
Description: EVAL KIT IMAGE SENSOR CCD INTERL
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: KAI-2093
Supplied Contents: Board(s)
Description: EVAL KIT IMAGE SENSOR CCD INTERL
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: KAI-2093
Supplied Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| 1N757A |
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Виробник: onsemi
Description: DIODE ZENER 9.1V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: DIODE ZENER 9.1V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| NSVBASH20MX2WT5G |
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Виробник: onsemi
Description: 100V & 200V SW DIODE IN X2DFNW2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Qualification: AEC-Q101
Description: 100V & 200V SW DIODE IN X2DFNW2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Qualification: AEC-Q101
на замовлення 104000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 5.32 грн |
| 16000+ | 4.56 грн |
| 24000+ | 4.27 грн |
| 56000+ | 3.47 грн |
| NSVBASH20MX2WT5G |
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Виробник: onsemi
Description: 100V & 200V SW DIODE IN X2DFNW2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Qualification: AEC-Q101
Description: 100V & 200V SW DIODE IN X2DFNW2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Qualification: AEC-Q101
на замовлення 111990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.33 грн |
| 14+ | 22.76 грн |
| 25+ | 19.92 грн |
| 100+ | 10.69 грн |
| 250+ | 10.02 грн |
| 500+ | 8.02 грн |
| 1000+ | 6.05 грн |
| 2500+ | 5.26 грн |
| NDF02N60ZG |
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Виробник: onsemi
Description: MOSFET N-CH 600V 2.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V
Description: MOSFET N-CH 600V 2.4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V
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| NLV74HC00ADTR2G |
![]() |
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
на замовлення 412404 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1208+ | 16.49 грн |
| NTS4172NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 1.6A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.7A, 10V
Power Dissipation (Max): 294mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 381 pF @ 15 V
Description: MOSFET N-CH 30V 1.6A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.7A, 10V
Power Dissipation (Max): 294mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 381 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2019+ | 9.89 грн |
| LC706200CM |
на замовлення 24900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1522+ | 14.22 грн |
| FDG410NZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 2.2A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V
Description: MOSFET N-CH 20V 2.2A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V
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В кошику
од. на суму грн.
| FDG410NZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 2.2A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V
Description: MOSFET N-CH 20V 2.2A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| STK760-712A-E |
на замовлення 13525 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 1470.95 грн |
| NRTS1560PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 15A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Description: DIODE SCHOTTKY 60V 15A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NRTS1560PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 15A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Description: DIODE SCHOTTKY 60V 15A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
на замовлення 2852 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.74 грн |
| 10+ | 42.47 грн |
| 100+ | 33.49 грн |
| 500+ | 24.46 грн |
| 1000+ | 21.65 грн |
| 2000+ | 20.41 грн |
| NRTS6100PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NRTS6100PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 4840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.45 грн |
| 10+ | 57.89 грн |
| 100+ | 38.40 грн |
| 500+ | 28.18 грн |
| 1000+ | 25.65 грн |
| 2000+ | 24.21 грн |
| NRTS860PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Description: DIODE SCHOTTKY 60V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NRTS860PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Description: DIODE SCHOTTKY 60V 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
на замовлення 4950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.58 грн |
| 10+ | 48.70 грн |
| 100+ | 37.91 грн |
| 500+ | 30.16 грн |
| 1000+ | 24.57 грн |
| 2000+ | 23.13 грн |
| NRVTS1260PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 12A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 12A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 24.59 грн |
| NRVTS1260PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 12A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 12A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
на замовлення 19745 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.90 грн |
| 10+ | 54.04 грн |
| 100+ | 37.56 грн |
| 500+ | 28.30 грн |
| 1000+ | 26.02 грн |
| 2000+ | 24.09 грн |
| NRVTS1560PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 15A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 15A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NRVTS1560PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 15A TO2773
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 15A TO2773
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 4971 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.53 грн |
| 10+ | 59.82 грн |
| 100+ | 39.77 грн |
| 500+ | 29.25 грн |
| 1000+ | 26.65 грн |
| 2000+ | 25.45 грн |
| NRVTS6100PFST3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 20.71 грн |
| NRVTS6100PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.60 грн |
| 10+ | 55.59 грн |
| 100+ | 36.78 грн |
| 500+ | 26.95 грн |
| 1000+ | 24.51 грн |
| 2000+ | 22.91 грн |
| NRTS12100PFST3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 100V 12A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 930pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Description: DIODE SCHOTTKY 100V 12A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 930pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 27.47 грн |
| NRTS12100PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 12A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 930pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Description: DIODE SCHOTTKY 100V 12A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 930pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.83 грн |
| 10+ | 58.85 грн |
| 100+ | 41.05 грн |
| 500+ | 31.03 грн |
| 1000+ | 28.58 грн |
| 2000+ | 26.50 грн |
| NRVTS3060MFST3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3140pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3140pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NRVTS3060MFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3140pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3140pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
на замовлення 1511 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.85 грн |
| 10+ | 91.99 грн |
| 100+ | 71.14 грн |
| 500+ | 53.63 грн |
| 1000+ | 53.44 грн |
| 74FST3245DWR2 |
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Виробник: onsemi
Description: IC BUS SWITCH 8 X 1:1 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Description: IC BUS SWITCH 8 X 1:1 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 74FST3244DWR2 |
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Виробник: onsemi
Description: IC BUS SWITCH 4 X 1:1 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Description: IC BUS SWITCH 4 X 1:1 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
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| 74FST3244DTR2 |
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Виробник: onsemi
Description: IC BUS SWITCH 4 X 1:1 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TSSOP
Description: IC BUS SWITCH 4 X 1:1 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TSSOP
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В кошику
од. на суму грн.
| 74FST3383DWR2 |
![]() |
Виробник: onsemi
Description: IC BUS FET EXCHG SW 5X2:2 24SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 2:2
Type: Bus FET Exchange Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 24-SOIC
Description: IC BUS FET EXCHG SW 5X2:2 24SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 2:2
Type: Bus FET Exchange Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 24-SOIC
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2219+ | 10.27 грн |
| KBP01M |
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Виробник: onsemi
Description: BRIDGE RECT 1P 100V 1.5A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1P 100V 1.5A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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В кошику
од. на суму грн.
| MV2101G |
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Виробник: onsemi
Description: DIODE TUNING 30V 6.8PF TO92-2
Capacitance Ratio: 3.2
Voltage - Peak Reverse (Max): 30 V
Supplier Device Package: TO-92
Capacitance Ratio Condition: C2/C30
Q @ Vr, F: 450 @ 4V, 50MHz
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Single
Mounting Type: Through Hole
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Packaging: Bulk
Description: DIODE TUNING 30V 6.8PF TO92-2
Capacitance Ratio: 3.2
Voltage - Peak Reverse (Max): 30 V
Supplier Device Package: TO-92
Capacitance Ratio Condition: C2/C30
Q @ Vr, F: 450 @ 4V, 50MHz
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Single
Mounting Type: Through Hole
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Packaging: Bulk
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1680+ | 12.78 грн |
| MC7924CT |
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Виробник: onsemi
Description: IC REG LINEAR -24V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): -24V
PSRR: 56dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR -24V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): -24V
PSRR: 56dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
на замовлення 25875 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2049+ | 11.05 грн |
| MC7924CTG |
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Виробник: onsemi
Description: IC REG LINEAR -24V 1A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): -24V
PSRR: 56dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR -24V 1A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): -24V
PSRR: 56dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
на замовлення 14703 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 809+ | 27.26 грн |
| 2N2369 |
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Виробник: onsemi
Description: TRANS NPN 15V 0.2A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Description: TRANS NPN 15V 0.2A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| SMMBD2837LT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 30V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE ARRAY GP 30V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMMBD2837LT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 30V 150MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 150mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 30V 150MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 150mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
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од. на суму грн.
| SMMBD2835LT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 35V 100MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 35V 100MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| CAT28LV65W25 |
![]() |
Виробник: onsemi
Description: IC EEPROM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 250 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 250 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 199 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 52+ | 413.57 грн |
| NVTFS6H850NWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 33.65 грн |
| 3000+ | 29.97 грн |
| 4500+ | 28.73 грн |
| 7500+ | 25.86 грн |
| NVTFS6H850NWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 33515 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 70.42 грн |
| 100+ | 47.18 грн |
| 500+ | 34.94 грн |
| NVTFS6H850NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 41.34 грн |
| 3000+ | 36.95 грн |
| 4500+ | 35.49 грн |
| NVTFS6H850NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 7480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.78 грн |
| 10+ | 84.50 грн |
| 100+ | 57.20 грн |
| 500+ | 42.69 грн |
| P6SMB68AT3 |
![]() |
Виробник: onsemi
Description: TVS DIODE 58.1VWM 92VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 305pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58.1VWM 92VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 305pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| P6SMB68AT3 |
![]() |
Виробник: onsemi
Description: TVS DIODE 58.1VWM 92VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 305pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58.1VWM 92VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 305pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| LA72715V-TLM-E |
![]() |
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 241+ | 88.84 грн |
| AS0140AT2C00XUSM0-TRBR |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 1661.67 грн |
| AS0140AT2C00XUSM0-TRBR |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1674.16 грн |
| AS0140AT2C00XUSM0-TPBR |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 1679.97 грн |
| AS0140AT2C00XUSM0-TPBR |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1692.64 грн |
| MAC12HCM |
![]() |
Виробник: onsemi
Description: TRIAC 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 23243 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 987+ | 22.02 грн |
| KSH45H11ITU |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 8A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: IPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS PNP 80V 8A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: IPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
на замовлення 70302 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 466+ | 41.78 грн |
| KSH45H11TM |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
товару немає в наявності
В кошику
од. на суму грн.
| KSH45H11TM |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS PNP 80V 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
на замовлення 4336 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 550+ | 35.90 грн |
| SZBZX84B9V1LT3G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 9.1V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.37 грн |
| SZBZX84B9V1LT3G |
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Виробник: onsemi
Description: DIODE ZENER 9.1V 250MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 250MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.86 грн |
| 36+ | 8.38 грн |
| 100+ | 5.20 грн |
| 500+ | 3.57 грн |
| 1000+ | 3.14 грн |
| 2000+ | 2.78 грн |
| 5000+ | 2.35 грн |























