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NRVSRD620VCTT4G NRVSRD620VCTT4G onsemi msrd620ct-d.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 4456 шт:
термін постачання 21-31 дні (днів)
5+81.29 грн
10+64.35 грн
100+50.09 грн
500+39.84 грн
1000+32.46 грн
Мінімальне замовлення: 5
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MPS2907ARLRM MPS2907ARLRM onsemi MPS2907%20SERIES.pdf Description: TRANS PNP 60V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
на замовлення 124000 шт:
термін постачання 21-31 дні (днів)
4537+5.17 грн
Мінімальне замовлення: 4537
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2SA2039-E 2SA2039-E onsemi en6912-d.pdf Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
на замовлення 302255 шт:
термін постачання 21-31 дні (днів)
481+44.78 грн
Мінімальне замовлення: 481
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2SA2040-E 2SA2040-E onsemi en6913-d.pdf Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 7561 шт:
термін постачання 21-31 дні (днів)
585+37.41 грн
Мінімальне замовлення: 585
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LA5735M-TE-L-E LA5735M-TE-L-E onsemi LA5735M.pdf Description: IC REG BUCK ADJ 700MA 8MFP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 700mA (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: 8-MFP
Synchronous Rectifier: No
Voltage - Output (Max): 32V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
на замовлення 1575 шт:
термін постачання 21-31 дні (днів)
392+60.84 грн
Мінімальне замовлення: 392
В кошику  од. на суму  грн.
LV8013T-A-TLM-E LV8013T-A-TLM-E onsemi LV8013T.pdf Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
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LV8013T-A-TLM-E LV8013T-A-TLM-E onsemi LV8013T.pdf Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Bulk
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
на замовлення 60854 шт:
термін постачання 21-31 дні (днів)
137+173.04 грн
Мінімальне замовлення: 137
В кошику  од. на суму  грн.
FLZ12VC FLZ12VC onsemi FAIRS44737-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 12.1V 500MW SOD80
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
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FLZ12VC FLZ12VC onsemi FAIRS44737-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 12.1V 500MW SOD80
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
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FAN3227CMX FAN3227CMX onsemi ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 9983 шт:
термін постачання 21-31 дні (днів)
2500+71.93 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FAN3227CMX FAN3227CMX onsemi ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 11231 шт:
термін постачання 21-31 дні (днів)
2+247.29 грн
10+151.12 грн
25+128.34 грн
100+96.30 грн
250+84.43 грн
500+77.13 грн
1000+69.85 грн
Мінімальне замовлення: 2
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FAN3223TMX-F085 FAN3223TMX-F085 onsemi ONSM-S-A0004903499-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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1SMF16BT3 1SMF16BT3 onsemi Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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1SMF16BT3G 1SMF16BT3G onsemi 1SMF16BT1-D.PDF Description: TVS ZENER 175W 16V SOD123FL
Packaging: Tape & Reel (TR)
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1SMF16BT1 1SMF16BT1 onsemi Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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1SMF16BT1G 1SMF16BT1G onsemi Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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NRTS6100TFSTWG NRTS6100TFSTWG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRTS6100TFSTWG NRTS6100TFSTWG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRTS6100TFSTAG NRTS6100TFSTAG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRTS6100TFSTAG NRTS6100TFSTAG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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MBR8170TFSTWG MBR8170TFSTWG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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MBR8170TFSTWG MBR8170TFSTWG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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MBR8170TFSTXG MBR8170TFSTXG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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MBR8170TFSTXG MBR8170TFSTXG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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MBR8170TFSTBG MBR8170TFSTBG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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MBR8170TFSTBG MBR8170TFSTBG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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MBR8170TFSTAG MBR8170TFSTAG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+31.05 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
MBR8170TFSTAG MBR8170TFSTAG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
на замовлення 2865 шт:
термін постачання 21-31 дні (днів)
4+100.11 грн
10+64.68 грн
100+51.12 грн
500+37.82 грн
Мінімальне замовлення: 4
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NTTD4401FR2 NTTD4401FR2 onsemi nttd4401f-d.pdf Description: MOSFET P-CH 20V 2.4A MICRO8
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V
на замовлення 5853 шт:
термін постачання 21-31 дні (днів)
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NRVTS5100ETFSTAG NRVTS5100ETFSTAG onsemi nrvts5100etfs-d.pdf Description: DIODE SCHOTTKY 100V 5A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
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NRVTS360ETFSTAG NRVTS360ETFSTAG onsemi NRVTS360TFS-D.pdf Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+13.12 грн
3000+11.29 грн
Мінімальне замовлення: 1500
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NRVTS360ETFSTAG NRVTS360ETFSTAG onsemi NRVTS360TFS-D.pdf Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
10+34.23 грн
12+28.67 грн
100+19.91 грн
500+14.59 грн
Мінімальне замовлення: 10
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NRTS6100TFSTXG NRTS6100TFSTXG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRTS6100TFSTXG NRTS6100TFSTXG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRTS6100TFSTBG NRTS6100TFSTBG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRTS6100TFSTBG NRTS6100TFSTBG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRVTS360ETFSWFTAG NRVTS360ETFSWFTAG onsemi NRVTS360ETFS-D.PDF Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
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NRVTS360ETFSWFTAG NRVTS360ETFSWFTAG onsemi NRVTS360ETFS-D.PDF Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
8+45.35 грн
10+37.49 грн
100+26.10 грн
500+19.12 грн
Мінімальне замовлення: 8
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NRVTS560ETFSWFTWG NRVTS560ETFSWFTWG onsemi nrvts560etfs-d.pdf Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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NRVTS560ETFSWFTWG NRVTS560ETFSWFTWG onsemi nrvts560etfs-d.pdf Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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NRVTS560ETFSWFTAG NRVTS560ETFSWFTAG onsemi Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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NRVTS560ETFSWFTAG NRVTS560ETFSWFTAG onsemi Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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FFSH30120ADN-F155 FFSH30120ADN-F155 onsemi ffsh30120adn-d.pdf Description: DIODE ARR SIC 1200V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
1+1317.72 грн
30+1027.13 грн
120+966.70 грн
510+822.16 грн
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BZX55C22 BZX55C22 onsemi BZX55C2V4%20-%20BZX55C56.pdf Description: DIODE ZENER 22V 500MW DO35
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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MMBF5461 MMBF5461 onsemi MMBF5460-62.pdf Description: JFET P-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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P6KE33ARL P6KE33ARL onsemi P6KE6.8A_Series.pdf Description: TVS DIODE 28.2VWM 45.7VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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SI3457DV SI3457DV onsemi si3457dv-d.pdf Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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SI3457DV SI3457DV onsemi si3457dv-d.pdf Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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SZESD7571N2T5G SZESD7571N2T5G onsemi ESD7571-D.PDF Description: TVS DIODE 5.3VWM 15VC 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 3500pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 108676 шт:
термін постачання 21-31 дні (днів)
2766+9.03 грн
Мінімальне замовлення: 2766
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IMH20TR1G IMH20TR1G onsemi imh20tr1g.pdf Description: TRANS PREBIAS 2NPN 15V SC-74R
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SC-74R
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IMH20TR1G IMH20TR1G onsemi imh20tr1g.pdf Description: TRANS PREBIAS 2NPN 15V SC-74R
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SC-74R
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IMH20TR1G IMH20TR1G onsemi imh20tr1g.pdf Description: TRANS PREBIAS 2NPN 15V SC-74R
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SC-74R
на замовлення 242925 шт:
термін постачання 21-31 дні (днів)
2522+9.03 грн
Мінімальне замовлення: 2522
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PACSZ1284-04QR PACSZ1284-04QR onsemi pacsz1284-d.pdf Description: FILTER RC ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 28-LSSOP (0.154", 3.90mm Width)
Size / Dimension: 0.389" L x 0.154" W (9.89mm x 3.90mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 33Ohms, 4.7kOhms, C = 150pF
Height: 0.069" (1.75mm)
Applications: Data Lines for Mobile Devices
Technology: RC
ESD Protection: Yes
Number of Channels: 17
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CSPEMI201AG CSPEMI201AG onsemi cspemi201ag-d.pdf Description: FILTER RC(PI) 10 OHM/100PF SMD
Packaging: Bulk
Package / Case: 5-UFBGA, WLCSP
Size / Dimension: 0.056" L x 0.037" W (1.41mm x 0.93mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 10Ohms, C = 100pF
Height: 0.026" (0.65mm)
Attenuation Value: 35dB @ 800MHz ~ 2.7GHz
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Center / Cutoff Frequency: 31MHz (Cutoff)
Resistance - Channel (Ohms): 10
ESD Protection: Yes
Number of Channels: 2
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
2049+11.85 грн
Мінімальне замовлення: 2049
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NUF4211MNT1G NUF4211MNT1G onsemi nuf4211mn-d.pdf Description: FILTER RC(PI) 100 OHM/8.5PF SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 8.5pF
Height: 0.039" (1.00mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
на замовлення 4120 шт:
термін постачання 21-31 дні (днів)
7+50.48 грн
10+47.21 грн
25+38.59 грн
50+32.51 грн
100+29.55 грн
250+28.08 грн
500+24.71 грн
1000+23.26 грн
Мінімальне замовлення: 7
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BZX84C3V0LT1 BZX84C3V0LT1 onsemi BZX84C2V4LT1-D%2CBZX84B4V7LT1.pdf Description: DIODE ZENER 3V 225MW SOT23-3
Tolerance: ±7%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 109992 шт:
термін постачання 21-31 дні (днів)
11539+2.29 грн
Мінімальне замовлення: 11539
В кошику  од. на суму  грн.
MC100EP451MNR4G MC100EP451MNR4G onsemi mc10ep451-d.pdf Description: IC FF D-TYPE SINGLE 6BIT 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 135 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 32-QFN (5x5)
Number of Bits per Element: 6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+1048.34 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
MC100EP451MNR4G MC100EP451MNR4G onsemi mc10ep451-d.pdf Description: IC FF D-TYPE SINGLE 6BIT 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 135 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 32-QFN (5x5)
Number of Bits per Element: 6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1+1736.99 грн
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MC100EP451FA MC100EP451FA onsemi mc10ep451-d.pdf Description: IC FF D-TYPE SGL 6-BIT 32-LQFP
Packaging: Tray
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Current - Quiescent (Iq): 135 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 6
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MC10EP451FA MC10EP451FA onsemi mc10ep451-d.pdf Description: IC FF D-TYPE SGL 6-BIT 32-LQFP
Packaging: Tray
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Current - Quiescent (Iq): 125 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 6
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NRVSRD620VCTT4G msrd620ct-d.pdf
NRVSRD620VCTT4G
Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 4456 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+81.29 грн
10+64.35 грн
100+50.09 грн
500+39.84 грн
1000+32.46 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MPS2907ARLRM MPS2907%20SERIES.pdf
MPS2907ARLRM
Виробник: onsemi
Description: TRANS PNP 60V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
на замовлення 124000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4537+5.17 грн
Мінімальне замовлення: 4537
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2SA2039-E en6912-d.pdf
2SA2039-E
Виробник: onsemi
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
на замовлення 302255 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
481+44.78 грн
Мінімальне замовлення: 481
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2SA2040-E en6913-d.pdf
2SA2040-E
Виробник: onsemi
Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 7561 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
585+37.41 грн
Мінімальне замовлення: 585
В кошику  од. на суму  грн.
LA5735M-TE-L-E LA5735M.pdf
LA5735M-TE-L-E
Виробник: onsemi
Description: IC REG BUCK ADJ 700MA 8MFP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 700mA (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: 8-MFP
Synchronous Rectifier: No
Voltage - Output (Max): 32V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
на замовлення 1575 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
392+60.84 грн
Мінімальне замовлення: 392
В кошику  од. на суму  грн.
LV8013T-A-TLM-E LV8013T.pdf
LV8013T-A-TLM-E
Виробник: onsemi
Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
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LV8013T-A-TLM-E LV8013T.pdf
LV8013T-A-TLM-E
Виробник: onsemi
Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Bulk
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
на замовлення 60854 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
137+173.04 грн
Мінімальне замовлення: 137
В кошику  од. на суму  грн.
FLZ12VC FAIRS44737-1.pdf?t.download=true&u=5oefqw
FLZ12VC
Виробник: onsemi
Description: DIODE ZENER 12.1V 500MW SOD80
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
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FLZ12VC FAIRS44737-1.pdf?t.download=true&u=5oefqw
FLZ12VC
Виробник: onsemi
Description: DIODE ZENER 12.1V 500MW SOD80
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
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FAN3227CMX ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw
FAN3227CMX
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 9983 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+71.93 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FAN3227CMX ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw
FAN3227CMX
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 11231 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+247.29 грн
10+151.12 грн
25+128.34 грн
100+96.30 грн
250+84.43 грн
500+77.13 грн
1000+69.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FAN3223TMX-F085 ONSM-S-A0004903499-1.pdf?t.download=true&u=5oefqw
FAN3223TMX-F085
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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1SMF16BT3
1SMF16BT3
Виробник: onsemi
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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1SMF16BT3G 1SMF16BT1-D.PDF
1SMF16BT3G
Виробник: onsemi
Description: TVS ZENER 175W 16V SOD123FL
Packaging: Tape & Reel (TR)
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1SMF16BT1
1SMF16BT1
Виробник: onsemi
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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1SMF16BT1G
1SMF16BT1G
Виробник: onsemi
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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NRTS6100TFSTWG nrts6100tfs-d.pdf
NRTS6100TFSTWG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRTS6100TFSTWG nrts6100tfs-d.pdf
NRTS6100TFSTWG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRTS6100TFSTAG nrts6100tfs-d.pdf
NRTS6100TFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRTS6100TFSTAG nrts6100tfs-d.pdf
NRTS6100TFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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MBR8170TFSTWG mbr8170tfs-d.pdf
MBR8170TFSTWG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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MBR8170TFSTWG mbr8170tfs-d.pdf
MBR8170TFSTWG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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MBR8170TFSTXG mbr8170tfs-d.pdf
MBR8170TFSTXG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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MBR8170TFSTXG mbr8170tfs-d.pdf
MBR8170TFSTXG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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MBR8170TFSTBG mbr8170tfs-d.pdf
MBR8170TFSTBG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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MBR8170TFSTBG mbr8170tfs-d.pdf
MBR8170TFSTBG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
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MBR8170TFSTAG mbr8170tfs-d.pdf
MBR8170TFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+31.05 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
MBR8170TFSTAG mbr8170tfs-d.pdf
MBR8170TFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
на замовлення 2865 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.11 грн
10+64.68 грн
100+51.12 грн
500+37.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NTTD4401FR2 nttd4401f-d.pdf
NTTD4401FR2
Виробник: onsemi
Description: MOSFET P-CH 20V 2.4A MICRO8
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V
на замовлення 5853 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
NRVTS5100ETFSTAG nrvts5100etfs-d.pdf
NRVTS5100ETFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 5A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
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NRVTS360ETFSTAG NRVTS360TFS-D.pdf
NRVTS360ETFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+13.12 грн
3000+11.29 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NRVTS360ETFSTAG NRVTS360TFS-D.pdf
NRVTS360ETFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.23 грн
12+28.67 грн
100+19.91 грн
500+14.59 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
NRTS6100TFSTXG nrts6100tfs-d.pdf
NRTS6100TFSTXG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRTS6100TFSTXG nrts6100tfs-d.pdf
NRTS6100TFSTXG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRTS6100TFSTBG nrts6100tfs-d.pdf
NRTS6100TFSTBG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRTS6100TFSTBG nrts6100tfs-d.pdf
NRTS6100TFSTBG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRVTS360ETFSWFTAG NRVTS360ETFS-D.PDF
NRVTS360ETFSWFTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
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NRVTS360ETFSWFTAG NRVTS360ETFS-D.PDF
NRVTS360ETFSWFTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.35 грн
10+37.49 грн
100+26.10 грн
500+19.12 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
NRVTS560ETFSWFTWG nrvts560etfs-d.pdf
NRVTS560ETFSWFTWG
Виробник: onsemi
Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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NRVTS560ETFSWFTWG nrvts560etfs-d.pdf
NRVTS560ETFSWFTWG
Виробник: onsemi
Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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NRVTS560ETFSWFTAG
NRVTS560ETFSWFTAG
Виробник: onsemi
Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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NRVTS560ETFSWFTAG
NRVTS560ETFSWFTAG
Виробник: onsemi
Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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FFSH30120ADN-F155 ffsh30120adn-d.pdf
FFSH30120ADN-F155
Виробник: onsemi
Description: DIODE ARR SIC 1200V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1317.72 грн
30+1027.13 грн
120+966.70 грн
510+822.16 грн
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BZX55C22 BZX55C2V4%20-%20BZX55C56.pdf
BZX55C22
Виробник: onsemi
Description: DIODE ZENER 22V 500MW DO35
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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MMBF5461 MMBF5460-62.pdf
MMBF5461
Виробник: onsemi
Description: JFET P-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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P6KE33ARL P6KE6.8A_Series.pdf
P6KE33ARL
Виробник: onsemi
Description: TVS DIODE 28.2VWM 45.7VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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SI3457DV si3457dv-d.pdf
SI3457DV
Виробник: onsemi
Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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SI3457DV si3457dv-d.pdf
SI3457DV
Виробник: onsemi
Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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SZESD7571N2T5G ESD7571-D.PDF
SZESD7571N2T5G
Виробник: onsemi
Description: TVS DIODE 5.3VWM 15VC 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 3500pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 108676 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2766+9.03 грн
Мінімальне замовлення: 2766
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IMH20TR1G imh20tr1g.pdf
IMH20TR1G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 15V SC-74R
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SC-74R
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IMH20TR1G imh20tr1g.pdf
IMH20TR1G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 15V SC-74R
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SC-74R
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IMH20TR1G imh20tr1g.pdf
IMH20TR1G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 15V SC-74R
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SC-74R
на замовлення 242925 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2522+9.03 грн
Мінімальне замовлення: 2522
В кошику  од. на суму  грн.
PACSZ1284-04QR pacsz1284-d.pdf
PACSZ1284-04QR
Виробник: onsemi
Description: FILTER RC ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 28-LSSOP (0.154", 3.90mm Width)
Size / Dimension: 0.389" L x 0.154" W (9.89mm x 3.90mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 33Ohms, 4.7kOhms, C = 150pF
Height: 0.069" (1.75mm)
Applications: Data Lines for Mobile Devices
Technology: RC
ESD Protection: Yes
Number of Channels: 17
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CSPEMI201AG cspemi201ag-d.pdf
CSPEMI201AG
Виробник: onsemi
Description: FILTER RC(PI) 10 OHM/100PF SMD
Packaging: Bulk
Package / Case: 5-UFBGA, WLCSP
Size / Dimension: 0.056" L x 0.037" W (1.41mm x 0.93mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 10Ohms, C = 100pF
Height: 0.026" (0.65mm)
Attenuation Value: 35dB @ 800MHz ~ 2.7GHz
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Center / Cutoff Frequency: 31MHz (Cutoff)
Resistance - Channel (Ohms): 10
ESD Protection: Yes
Number of Channels: 2
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2049+11.85 грн
Мінімальне замовлення: 2049
В кошику  од. на суму  грн.
NUF4211MNT1G nuf4211mn-d.pdf
NUF4211MNT1G
Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/8.5PF SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 8.5pF
Height: 0.039" (1.00mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
на замовлення 4120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.48 грн
10+47.21 грн
25+38.59 грн
50+32.51 грн
100+29.55 грн
250+28.08 грн
500+24.71 грн
1000+23.26 грн
Мінімальне замовлення: 7
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BZX84C3V0LT1 BZX84C2V4LT1-D%2CBZX84B4V7LT1.pdf
BZX84C3V0LT1
Виробник: onsemi
Description: DIODE ZENER 3V 225MW SOT23-3
Tolerance: ±7%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 109992 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11539+2.29 грн
Мінімальне замовлення: 11539
В кошику  од. на суму  грн.
MC100EP451MNR4G mc10ep451-d.pdf
MC100EP451MNR4G
Виробник: onsemi
Description: IC FF D-TYPE SINGLE 6BIT 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 135 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 32-QFN (5x5)
Number of Bits per Element: 6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+1048.34 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
MC100EP451MNR4G mc10ep451-d.pdf
MC100EP451MNR4G
Виробник: onsemi
Description: IC FF D-TYPE SINGLE 6BIT 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 135 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 32-QFN (5x5)
Number of Bits per Element: 6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1736.99 грн
В кошику  од. на суму  грн.
MC100EP451FA mc10ep451-d.pdf
MC100EP451FA
Виробник: onsemi
Description: IC FF D-TYPE SGL 6-BIT 32-LQFP
Packaging: Tray
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Current - Quiescent (Iq): 135 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 6
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MC10EP451FA mc10ep451-d.pdf
MC10EP451FA
Виробник: onsemi
Description: IC FF D-TYPE SGL 6-BIT 32-LQFP
Packaging: Tray
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Current - Quiescent (Iq): 125 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 6
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