| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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74FST3245DWR2 | onsemi |
Description: IC BUS SWITCH 8 X 1:1 20SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 8 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74FST3244DWR2 | onsemi |
Description: IC BUS SWITCH 4 X 1:1 20SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74FST3244DTR2 | onsemi |
Description: IC BUS SWITCH 4 X 1:1 20TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 20-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74FST3383DWR2 | onsemi |
Description: IC BUS FET EXCHG SW 5X2:2 24SOICPackaging: Bulk Package / Case: 24-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 5 x 2:2 Type: Bus FET Exchange Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 24-SOIC |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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KBP01M | onsemi |
Description: BRIDGE RECT 1P 100V 1.5A KBPMPackaging: Tube Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 165°C (TJ) Technology: Standard Supplier Device Package: KBPM Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MV2101G | onsemi |
Description: DIODE TUNING 30V 6.8PF TO92-2Packaging: Bulk Package / Case: TO-226-2, TO-92-2 (TO-226AC) Mounting Type: Through Hole Diode Type: Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz Q @ Vr, F: 450 @ 4V, 50MHz Capacitance Ratio Condition: C2/C30 Supplier Device Package: TO-92 Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 3.2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MC7924CT | onsemi |
Description: IC REG LINEAR -24V 1A TO220ABPackaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -40V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): -24V PSRR: 56dB (120Hz) Voltage Dropout (Max): 1.3V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
на замовлення 25875 шт: термін постачання 21-31 дні (днів) |
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MC7924CTG | onsemi |
Description: IC REG LINEAR -24V 1A TO220ABPackaging: Bulk Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -40V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): -24V PSRR: 56dB (120Hz) Voltage Dropout (Max): 1.3V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
на замовлення 14703 шт: термін постачання 21-31 дні (днів) |
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| 2N2369 | onsemi |
Description: TRANS NPN 15V 0.2A TO-18Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 360 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMMBD2837LT1G | onsemi |
Description: DIODE ARRAY GP 30V 150MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMMBD2837LT1G | onsemi |
Description: DIODE ARRAY GP 30V 150MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBD2835LT1 | onsemi |
Description: DIODE SWITCH DUAL 35V SOT23Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMMBD2835LT1G | onsemi |
Description: DIODE ARRAY GP 35V 100MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT28LV65W25 | onsemi |
Description: IC EEPROM 64KBIT PARALLEL 28SOICPackaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: Parallel Access Time: 250 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 199 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NWFTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NWFTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 33515 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 7480 шт: термін постачання 21-31 дні (днів) |
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P6SMB68AT3 | onsemi |
Description: TVS DIODE 58.1VWM 92VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 305pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.5A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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P6SMB68AT3 | onsemi |
Description: TVS DIODE 58.1VWM 92VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 305pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.5A Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LA72715V-TLM-E | onsemi |
Description: JPN MTS (MULTI CHANNEL TELEVISIOPackaging: Bulk |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| AS0140AT2C00XUSM0-TRBR | onsemi |
Description: 1MP 1/4 CIS SOCPackaging: Tape & Reel (TR) Package / Case: 130-LFBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 130-IBGA (8.5x8.5) Grade: Automotive Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| AS0140AT2C00XUSM0-TRBR | onsemi |
Description: 1MP 1/4 CIS SOCPackaging: Cut Tape (CT) Package / Case: 130-LFBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 130-IBGA (8.5x8.5) Grade: Automotive Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| AS0140AT2C00XUSM0-TPBR | onsemi |
Description: 1MP 1/4 CIS SOCPackaging: Tape & Reel (TR) Package / Case: 130-LFBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 130-IBGA (8.5x8.5) Grade: Automotive Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| AS0140AT2C00XUSM0-TPBR | onsemi |
Description: 1MP 1/4 CIS SOCPackaging: Cut Tape (CT) Package / Case: 130-LFBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 130-IBGA (8.5x8.5) Grade: Automotive Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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MAC12HCM | onsemi |
Description: TRIAC 600V 12A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220 Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 23243 шт: термін постачання 21-31 дні (днів) |
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KSH45H11ITU | onsemi |
Description: TRANS PNP 80V 8A IPAKPackaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: IPAK Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
на замовлення 70302 шт: термін постачання 21-31 дні (днів) |
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KSH45H11TM | onsemi |
Description: TRANS PNP 80V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KSH45H11TM | onsemi |
Description: TRANS PNP 80V 8A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
на замовлення 4336 шт: термін постачання 21-31 дні (днів) |
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SZBZX84B9V1LT3G | onsemi |
Description: DIODE ZENER 9.1V 250MW SOT23-3Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 6 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84B9V1LT3G | onsemi |
Description: DIODE ZENER 9.1V 250MW SOT23-3Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 6 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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EFC6602R-TR | onsemi |
Description: MOSFET 2N-CH EFCP2718Packaging: Tape & Reel (TR) Package / Case: 6-XFBGA, FCBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Supplier Device Package: EFCP2718-6CE-020 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EFC6602R-TR | onsemi |
Description: MOSFET 2N-CH EFCP2718Packaging: Bulk Package / Case: 6-XFBGA, FCBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Supplier Device Package: EFCP2718-6CE-020 |
на замовлення 635000 шт: термін постачання 21-31 дні (днів) |
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FUSB15201VMNWTWG | onsemi |
Description: INTEGRATED DUAL PORT USB TYPE-CPackaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 5.5V Applications: USB, Type-C Controller Current - Supply: 330µA Supplier Device Package: 24-QFN (4x4) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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FUSB15201VMNWTWG | onsemi |
Description: INTEGRATED DUAL PORT USB TYPE-CPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 5.5V Applications: USB, Type-C Controller Current - Supply: 330µA Supplier Device Package: 24-QFN (4x4) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5868 шт: термін постачання 21-31 дні (днів) |
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FUSB15200MNTWG | onsemi |
Description: DUAL PORT USB TYPE-C & PDCONTROLPackaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 5.5V Applications: USB, Type-C Controller Current - Supply: 330µA Supplier Device Package: 40-QFN (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FUSB15200MNTWG | onsemi |
Description: DUAL PORT USB TYPE-C & PDCONTROLPackaging: Cut Tape (CT) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 5.5V Applications: USB, Type-C Controller Current - Supply: 330µA Supplier Device Package: 40-QFN (5x5) |
на замовлення 4965 шт: термін постачання 21-31 дні (днів) |
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FDPF51N25YDTU | onsemi |
Description: MOSFET N-CH 250V 51A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AR0132AT6R00XPEA0-TRBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AR0132AT6R00XPEA0-TRBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Cut Tape (CT) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AR0132AT6G00XPEA0-AA-DRBR | onsemi |
Description: DIGITAL IMAGE SENSOR IBGA Packaging: Tray Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Frames per Second: 45 |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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AR0132AT6M00XPEA0-DPBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
на замовлення 860 шт: термін постачання 21-31 дні (днів) |
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AR0132AT6R00XPEA0-DPBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
на замовлення 2450 шт: термін постачання 21-31 дні (днів) |
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AR0132AT6C00XPEA0-TRBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AR0132AT6C00XPEA0-TRBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Cut Tape (CT) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AR0132AT6C00XPEA0-DRBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
на замовлення 4994 шт: термін постачання 21-31 дні (днів) |
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AR0132AT6C00XPEA0-TPBR | onsemi |
Description: IMAGE SENSOR RGB CMOS Packaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45 Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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AR0132AT6C00XPEA0-TPBR | onsemi |
Description: IMAGE SENSOR RGB CMOS Packaging: Cut Tape (CT) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45 Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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AR0132AT6C00XPEA0-DPBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
на замовлення 1033 шт: термін постачання 21-31 дні (днів) |
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AR0132AT6R00XPEA0-DRBR | onsemi |
Description: IMAGE SENSOR RGB CMOS Packaging: Bulk Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45 Qualification: AEC-Q100 |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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AR0132AT6R00XPEA0-DRBR | onsemi |
Description: IMAGE SENSOR RGB CMOS Packaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AR0132AT6C00XPEA0-DPBR2 | onsemi |
Description: 1.2 MP 1/3 CIS Packaging: Tray |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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AR0132AT6R00XPEA0-TPBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AR0132AT6R00XPEA0-TPBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Cut Tape (CT) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AR0132AT6G00XPEA0-DRBR | onsemi |
Description: IMAGE SENSOR Packaging: Tray Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Frames per Second: 45 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AR0134CSSM00SPCA0-DRBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 54.0 |
на замовлення 2317 шт: термін постачання 21-31 дні (днів) |
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AR0134CSSM00SUEA0-DRBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Frames per Second: 54.0 |
на замовлення 1818 шт: термін постачання 21-31 дні (днів) |
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AR0134CSSC00SUEA0-TPBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Frames per Second: 54.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AR0134CSSC00SUEA0-TPBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Cut Tape (CT) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Frames per Second: 54.0 |
на замовлення 1613 шт: термін постачання 21-31 дні (днів) |
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AR0144CSSC00SUKA0-CRBR | onsemi |
Description: IMAGE SENSOR CMOS ODCSP-69Packaging: Tray Package / Case: 69-WFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 69-ODCSP (5.55x5.57) Frames per Second: 60 |
на замовлення 2998 шт: термін постачання 21-31 дні (днів) |
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| 74FST3245DWR2 |
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Виробник: onsemi
Description: IC BUS SWITCH 8 X 1:1 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Description: IC BUS SWITCH 8 X 1:1 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| 74FST3244DWR2 |
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Виробник: onsemi
Description: IC BUS SWITCH 4 X 1:1 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Description: IC BUS SWITCH 4 X 1:1 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| 74FST3244DTR2 |
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Виробник: onsemi
Description: IC BUS SWITCH 4 X 1:1 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TSSOP
Description: IC BUS SWITCH 4 X 1:1 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| 74FST3383DWR2 |
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Виробник: onsemi
Description: IC BUS FET EXCHG SW 5X2:2 24SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 2:2
Type: Bus FET Exchange Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 24-SOIC
Description: IC BUS FET EXCHG SW 5X2:2 24SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 2:2
Type: Bus FET Exchange Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 24-SOIC
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2219+ | 11.42 грн |
| KBP01M |
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Виробник: onsemi
Description: BRIDGE RECT 1P 100V 1.5A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1P 100V 1.5A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| MV2101G |
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Виробник: onsemi
Description: DIODE TUNING 30V 6.8PF TO92-2
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Q @ Vr, F: 450 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C30
Supplier Device Package: TO-92
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 3.2
Description: DIODE TUNING 30V 6.8PF TO92-2
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Q @ Vr, F: 450 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C30
Supplier Device Package: TO-92
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 3.2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1680+ | 14.21 грн |
| MC7924CT | ![]() |
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Виробник: onsemi
Description: IC REG LINEAR -24V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): -24V
PSRR: 56dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR -24V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): -24V
PSRR: 56dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
на замовлення 25875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2049+ | 12.29 грн |
| MC7924CTG | ![]() |
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Виробник: onsemi
Description: IC REG LINEAR -24V 1A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): -24V
PSRR: 56dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR -24V 1A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): -24V
PSRR: 56dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
на замовлення 14703 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 809+ | 30.31 грн |
| 2N2369 |
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Виробник: onsemi
Description: TRANS NPN 15V 0.2A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Description: TRANS NPN 15V 0.2A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
товару немає в наявності
В кошику
од. на суму грн.
| SMMBD2837LT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 30V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE ARRAY GP 30V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| SMMBD2837LT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 30V 150MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE ARRAY GP 30V 150MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
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| SMMBD2835LT1G |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 35V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE ARRAY GP 35V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
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| CAT28LV65W25 |
![]() |
Виробник: onsemi
Description: IC EEPROM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 250 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 250 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 199 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 52+ | 459.74 грн |
| NVTFS6H850NWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 37.40 грн |
| 3000+ | 33.31 грн |
| 4500+ | 31.93 грн |
| 7500+ | 28.75 грн |
| NVTFS6H850NWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 33515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 127.49 грн |
| 10+ | 78.28 грн |
| 100+ | 52.45 грн |
| 500+ | 38.84 грн |
| NVTFS6H850NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 45.96 грн |
| 3000+ | 41.07 грн |
| 4500+ | 39.46 грн |
| NVTFS6H850NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 7480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.16 грн |
| 10+ | 93.93 грн |
| 100+ | 63.59 грн |
| 500+ | 47.46 грн |
| P6SMB68AT3 |
![]() |
Виробник: onsemi
Description: TVS DIODE 58.1VWM 92VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 305pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58.1VWM 92VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 305pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| P6SMB68AT3 |
![]() |
Виробник: onsemi
Description: TVS DIODE 58.1VWM 92VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 305pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58.1VWM 92VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 305pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| LA72715V-TLM-E |
![]() |
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 241+ | 98.76 грн |
| AS0140AT2C00XUSM0-TRBR |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 1847.18 грн |
| AS0140AT2C00XUSM0-TRBR |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1861.06 грн |
| AS0140AT2C00XUSM0-TPBR |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 1867.52 грн |
| AS0140AT2C00XUSM0-TPBR |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1881.60 грн |
| MAC12HCM |
![]() |
Виробник: onsemi
Description: TRIAC 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 23243 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 987+ | 24.47 грн |
| KSH45H11ITU |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 8A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: IPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS PNP 80V 8A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: IPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
на замовлення 70302 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 466+ | 46.44 грн |
| KSH45H11TM |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
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| KSH45H11TM |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS PNP 80V 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
на замовлення 4336 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 550+ | 39.91 грн |
| SZBZX84B9V1LT3G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 9.1V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.64 грн |
| SZBZX84B9V1LT3G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 9.1V 250MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 250MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.40 грн |
| 36+ | 9.31 грн |
| 100+ | 5.78 грн |
| 500+ | 3.97 грн |
| 1000+ | 3.49 грн |
| 2000+ | 3.09 грн |
| 5000+ | 2.61 грн |
| EFC6602R-TR |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH EFCP2718
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
Description: MOSFET 2N-CH EFCP2718
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
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| EFC6602R-TR |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH EFCP2718
Packaging: Bulk
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
Description: MOSFET 2N-CH EFCP2718
Packaging: Bulk
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
на замовлення 635000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 826+ | 26.61 грн |
| FUSB15201VMNWTWG |
![]() |
Виробник: onsemi
Description: INTEGRATED DUAL PORT USB TYPE-C
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 24-QFN (4x4)
Grade: Automotive
Qualification: AEC-Q100
Description: INTEGRATED DUAL PORT USB TYPE-C
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 24-QFN (4x4)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 243.05 грн |
| FUSB15201VMNWTWG |
![]() |
Виробник: onsemi
Description: INTEGRATED DUAL PORT USB TYPE-C
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 24-QFN (4x4)
Grade: Automotive
Qualification: AEC-Q100
Description: INTEGRATED DUAL PORT USB TYPE-C
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 24-QFN (4x4)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5868 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 551.05 грн |
| 10+ | 353.98 грн |
| 25+ | 307.84 грн |
| 100+ | 239.97 грн |
| 250+ | 215.95 грн |
| 500+ | 205.73 грн |
| FUSB15200MNTWG |
![]() |
Виробник: onsemi
Description: DUAL PORT USB TYPE-C & PDCONTROL
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 40-QFN (5x5)
Description: DUAL PORT USB TYPE-C & PDCONTROL
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 40-QFN (5x5)
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В кошику
од. на суму грн.
| FUSB15200MNTWG |
![]() |
Виробник: onsemi
Description: DUAL PORT USB TYPE-C & PDCONTROL
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 40-QFN (5x5)
Description: DUAL PORT USB TYPE-C & PDCONTROL
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 40-QFN (5x5)
на замовлення 4965 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 361.94 грн |
| 10+ | 265.32 грн |
| 25+ | 244.49 грн |
| 100+ | 208.00 грн |
| 250+ | 197.77 грн |
| 500+ | 191.61 грн |
| 1000+ | 183.48 грн |
| 2500+ | 178.21 грн |
| FDPF51N25YDTU |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 250V 51A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
Description: MOSFET N-CH 250V 51A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
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В кошику
од. на суму грн.
| AR0132AT6R00XPEA0-TRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| AR0132AT6R00XPEA0-TRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| AR0132AT6G00XPEA0-AA-DRBR |
Виробник: onsemi
Description: DIGITAL IMAGE SENSOR IBGA
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Frames per Second: 45
Description: DIGITAL IMAGE SENSOR IBGA
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Frames per Second: 45
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2078.40 грн |
| 10+ | 1667.55 грн |
| 25+ | 1476.98 грн |
| 80+ | 1341.38 грн |
| 440+ | 1251.96 грн |
| AR0132AT6M00XPEA0-DPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
на замовлення 860 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1735.28 грн |
| 5+ | 1527.64 грн |
| 10+ | 1474.25 грн |
| 25+ | 1323.58 грн |
| 50+ | 1282.60 грн |
| 100+ | 1244.99 грн |
| 500+ | 1150.01 грн |
| AR0132AT6R00XPEA0-DPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1735.28 грн |
| 5+ | 1493.53 грн |
| 10+ | 1430.00 грн |
| 25+ | 1272.58 грн |
| 40+ | 1240.70 грн |
| 80+ | 1197.80 грн |
| 440+ | 1091.97 грн |
| AR0132AT6C00XPEA0-TRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| AR0132AT6C00XPEA0-TRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| AR0132AT6C00XPEA0-DRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
на замовлення 4994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1809.72 грн |
| 5+ | 1558.62 грн |
| 10+ | 1492.62 грн |
| 25+ | 1328.78 грн |
| 40+ | 1295.70 грн |
| 80+ | 1251.17 грн |
| 440+ | 1141.21 грн |
| AR0132AT6C00XPEA0-TPBR |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 1460.44 грн |
| AR0132AT6C00XPEA0-TPBR |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2305.15 грн |
| 10+ | 1850.47 грн |
| 25+ | 1638.98 грн |
| 100+ | 1488.50 грн |
| 500+ | 1389.27 грн |
| AR0132AT6C00XPEA0-DPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1857.64 грн |
| 5+ | 1636.74 грн |
| 10+ | 1580.05 грн |
| 25+ | 1419.13 грн |
| 50+ | 1375.59 грн |
| 100+ | 1335.67 грн |
| 500+ | 1234.59 грн |
| AR0132AT6R00XPEA0-DRBR |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Bulk
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Bulk
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45
Qualification: AEC-Q100
на замовлення 33 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 1411.94 грн |
| AR0132AT6R00XPEA0-DRBR |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| AR0132AT6C00XPEA0-DPBR2 |
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2691.91 грн |
| 10+ | 2160.29 грн |
| AR0132AT6R00XPEA0-TPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| AR0132AT6R00XPEA0-TPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| AR0132AT6G00XPEA0-DRBR |
Виробник: onsemi
Description: IMAGE SENSOR
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Frames per Second: 45
Description: IMAGE SENSOR
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Frames per Second: 45
товару немає в наявності
В кошику
од. на суму грн.
| AR0134CSSM00SPCA0-DRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 54.0
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 54.0
на замовлення 2317 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1579.55 грн |
| 5+ | 1392.35 грн |
| 10+ | 1344.23 грн |
| 25+ | 1207.59 грн |
| 50+ | 1170.72 грн |
| 240+ | 1169.54 грн |
| AR0134CSSM00SUEA0-DRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 54.0
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 54.0
на замовлення 1818 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1895.29 грн |
| 5+ | 1670.85 грн |
| 10+ | 1613.42 грн |
| 25+ | 1449.56 грн |
| 40+ | 1419.23 грн |
| 80+ | 1377.61 грн |
| 440+ | 1268.10 грн |
| AR0134CSSC00SUEA0-TPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 54.0
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 54.0
товару немає в наявності
В кошику
од. на суму грн.
| AR0134CSSC00SUEA0-TPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 54.0
Description: IMAGE SENSOR MONO CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 54.0
на замовлення 1613 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1951.76 грн |
| 5+ | 1682.71 грн |
| 10+ | 1612.59 грн |
| 25+ | 1436.63 грн |
| 50+ | 1385.55 грн |
| 100+ | 1339.76 грн |
| 500+ | 1230.32 грн |
| AR0144CSSC00SUKA0-CRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR CMOS ODCSP-69
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60
Description: IMAGE SENSOR CMOS ODCSP-69
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60
на замовлення 2998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 867.64 грн |






















