| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MJD127G | ONSEMI |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD Kind of package: tube Current gain: 100...12000 Frequency: 4MHz |
на замовлення 120 шт: термін постачання 14-30 дні (днів) |
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MJD127T4G | ONSEMI |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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MJD122G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Current gain: 300 Mounting: SMD Kind of package: tube Frequency: 4MHz |
на замовлення 967 шт: термін постачання 14-30 дні (днів) |
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NJVMJD122T4G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NJVMJD127T4G | ONSEMI |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP4305DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC Type of integrated circuit: PMIC Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward; resonant LLC Operating temperature: -40...125°C Output current: 4...8A Number of channels: 1 Operating voltage: 7.8...37V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| NCP4305DMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC Type of integrated circuit: PMIC Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward; resonant LLC Operating temperature: -40...125°C Output current: 4...8A Number of channels: 1 Operating voltage: 7.8...37V DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP4305DMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC Type of integrated circuit: PMIC Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward; resonant LLC Operating temperature: -40...125°C Output current: 4...8A Number of channels: 1 Operating voltage: 7.8...37V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT25256VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT25256YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT25256XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NSVDTC143ZET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 3000pcs. Power dissipation: 0.3W Application: automotive industry Current gain: 80...200 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C33LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 33V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
на замовлення 14945 шт: термін постачання 14-30 дні (днів) |
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| MC10EP16DG | ONSEMI |
Category: Other logic integrated circuitsDescription: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V Type of integrated circuit: digital Kind of integrated circuit: differential; receiver Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Integrated circuit features: differential Technology: ECL Supply voltage: 3...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NDP6060L | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 48A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 60nC |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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NDS352AP | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -900mA Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 3nC |
на замовлення 3009 шт: термін постачання 14-30 дні (днів) |
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FDV304P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -25V Drain current: -0.46A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 1.5nC |
на замовлення 16491 шт: термін постачання 14-30 дні (днів) |
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FDV301N | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 55844 шт: термін постачання 14-30 дні (днів) |
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FDV303N | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.68A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 12311 шт: термін постачання 14-30 дні (днів) |
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FDN360P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 136mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 4580 шт: термін постачання 14-30 дні (днів) |
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FDC658AP | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±25V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 8.1nC Technology: PowerTrench® |
на замовлення 477 шт: термін постачання 14-30 дні (днів) |
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FDN327N | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 6.3nC Technology: PowerTrench® |
на замовлення 1661 шт: термін постачання 14-30 дні (днів) |
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| ADT7461AARMZ-R | ONSEMI |
Category: Temperature transducersDescription: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V Case: MSOP8 Type of integrated circuit: temperature sensor Operating temperature: -40...120°C Supply voltage: 3...3.6V DC Threshold on-voltage: 2.55V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| ADT7461ARMZ-R7 | ONSEMI |
Category: Temperature transducersDescription: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V Case: MSOP8 Type of integrated circuit: temperature sensor Operating temperature: -40...120°C Supply voltage: 3...3.6V DC Threshold on-voltage: 2.55V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ADT7461ARZ-REEL | ONSEMI |
Category: Temperature transducersDescription: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V Case: MSOP8 Type of integrated circuit: temperature sensor Operating temperature: -40...120°C Supply voltage: 3...3.6V DC Threshold on-voltage: 2.55V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSR1020MW2T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Load current: 1A Max. forward voltage: 0.54V Max. off-state voltage: 20V Kind of package: reel; tape Semiconductor structure: single diode Case: SOD323 |
на замовлення 1600 шт: термін постачання 14-30 дні (днів) |
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| 20414-009-XTD | ONSEMI |
Category: Unclassified Description: 20414-009-XTD |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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MBR360RLG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 1.08V Max. forward impulse current: 80A |
на замовлення 1762 шт: термін постачання 14-30 дні (днів) |
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| FGY160T65SPD-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 160A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 163nC Kind of package: tube |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| AFGY160T65SPD-B4 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 160A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 163nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FCD360N65S3R0 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 650V; 10A; 83W; DPAK; single transistor Type of transistor: N-MOSFET Drain-source voltage: 650V Drain current: 10A Case: DPAK Gate-source voltage: 30V Mounting: SMD Kind of channel: enhancement Power dissipation: 83W Gate charge: 18nC Technology: PowerTrench® Semiconductor structure: single transistor On-state resistance: 0.36Ω |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FCPF360N65S3R0L-F154 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; N; 650V; 10A; 27W; TO220 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 10A Case: TO220 Gate-source voltage: 30V Mounting: THT Kind of channel: enhancement Power dissipation: 27W Gate charge: 18nC Technology: PowerTrench® On-state resistance: 0.36Ω |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MM74HCT574WM | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state Trigger: positive-edge-triggered Technology: CMOS Kind of package: tube Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
на замовлення 272 шт: термін постачання 14-30 дні (днів) |
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74VHCT574AM | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state Trigger: positive-edge-triggered Technology: CMOS Kind of package: tube Supply voltage: 4.5...5.5V DC Manufacturer series: VHCT |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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74VHCT574AMTC | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Trigger: positive-edge-triggered Technology: CMOS Kind of package: tube Supply voltage: 4.5...5.5V DC Manufacturer series: VHCT |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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74VHCT574AMTCX | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Trigger: positive-edge-triggered Technology: CMOS Kind of package: reel; tape Supply voltage: 4.5...5.5V DC Manufacturer series: VHCT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MM74HCT574WMX | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state Trigger: positive-edge-triggered Technology: CMOS Kind of package: reel; tape Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HCT574ADTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of output: 3-state; non-inverting Trigger: positive-edge-triggered Technology: CMOS Kind of package: reel; tape Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74HCT574ADWR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Mounting: SMD Operating temperature: -55...125°C Family: HCT Kind of output: 3-state Technology: CMOS; TTL Kind of package: reel; tape Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
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MM74HCT574MTCX | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Trigger: positive-edge-triggered Technology: CMOS Kind of package: reel; tape Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HCT574SJX | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SOP20 Operating temperature: -40...85°C Kind of output: 3-state Trigger: positive-edge-triggered Technology: CMOS Kind of package: reel; tape Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74VHCT574ADTRG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Trigger: positive-edge-triggered Technology: CMOS Kind of package: reel; tape Supply voltage: 4.5...5.5V DC Manufacturer series: VHCT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74VHCT574ADWG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state Trigger: positive-edge-triggered Technology: CMOS Kind of package: tube Supply voltage: 4.5...5.5V DC Manufacturer series: VHCT |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC74VHCT574ADWRG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; VHCT; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Mounting: SMD Case: SO20WB Operating temperature: -40...85°C Family: VHCT Kind of output: 3-state Technology: CMOS; TTL Kind of package: reel; tape Supply voltage: 4.5...5.5V DC Manufacturer series: VHCT |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
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MOC3011M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC301XM Case: DIP6 Mounting: THT Manufacturer series: MOC301XM Kind of output: triac Type of optocoupler: optotriac Trigger current: 60mA Number of channels: 1 Max. off-state voltage: 3V Output voltage: 400V Insulation voltage: 4.17kV |
на замовлення 36 шт: термін постачання 14-30 дні (днів) |
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MOC3011SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs Case: PDIP6 Mounting: SMD Manufacturer series: MOC301XM Kind of output: triac; without zero voltage crossing driver Type of optocoupler: optotriac Trigger current: 5mA Number of channels: 1 Max. off-state voltage: 3V Output voltage: 250V Slew rate: 1kV/μs Insulation voltage: 4.17kV |
на замовлення 990 шт: термін постачання 14-30 дні (днів) |
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1SMB5934BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 24V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
на замовлення 5079 шт: термін постачання 14-30 дні (днів) |
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1SMB5956BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 200V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
на замовлення 3716 шт: термін постачання 14-30 дні (днів) |
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1SMB5935BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 27V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 27V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
на замовлення 7309 шт: термін постачання 14-30 дні (днів) |
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1SMB5937BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 33V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
на замовлення 3794 шт: термін постачання 14-30 дні (днів) |
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1SMB5928BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 13V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
на замовлення 954 шт: термін постачання 14-30 дні (днів) |
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1SMB5927BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 12V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
на замовлення 26 шт: термін постачання 14-30 дні (днів) |
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2N6517G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 350V; 500mA; 625mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 0.5A Case: TO92 Mounting: THT Power: 625mW |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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SBCX19LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FJI5603DTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 800V Collector current: 3A Power dissipation: 100W Current gain: 20...35 Mounting: THT Frequency: 5MHz Kind of package: tube Case: I2PAK |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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BDX33CG | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 10A; 70W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 10A Power dissipation: 70W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 94 шт: термін постачання 14-30 дні (днів) |
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| NCV2902DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 3MHz; Ch: 4; 3÷32VDC; SO14; 13mV; 200nA Type of integrated circuit: operational amplifier Case: SO14 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset voltage: 13mV Slew rate: 2.4V/μs Voltage supply range: 3...32V DC Input offset current: 200nA Number of channels: quad; 4 Bandwidth: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCV2902DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 3MHz; Ch: 4; 3÷32VDC; TSSOP14; 13mV Type of integrated circuit: operational amplifier Case: TSSOP14 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset voltage: 13mV Slew rate: 2.4V/μs Voltage supply range: 3...32V DC Input offset current: 200nA Number of channels: quad; 4 Bandwidth: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ33T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 33V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZxxTxG |
на замовлення 1146 шт: термін постачання 14-30 дні (днів) |
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SZMMSZ33ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 33V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
на замовлення 2040 шт: термін постачання 14-30 дні (днів) |
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| MJD127G |
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Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: tube
Current gain: 100...12000
Frequency: 4MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: tube
Current gain: 100...12000
Frequency: 4MHz
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 105.54 грн |
| 10+ | 85.49 грн |
| 25+ | 70.33 грн |
| 75+ | 44.23 грн |
| MJD127T4G |
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Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.82 грн |
| 8+ | 56.33 грн |
| 10+ | 47.69 грн |
| 20+ | 40.19 грн |
| 50+ | 32.37 грн |
| 100+ | 28.08 грн |
| 200+ | 25.04 грн |
| 500+ | 24.71 грн |
| MJD122G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Current gain: 300
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Current gain: 300
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
на замовлення 967 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 83.18 грн |
| 10+ | 61.36 грн |
| 25+ | 51.97 грн |
| 50+ | 46.12 грн |
| 75+ | 43.07 грн |
| 150+ | 39.61 грн |
| NJVMJD122T4G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NJVMJD127T4G |
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Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NCP4305DDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCP4305DMNTWG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NCP4305DMTTWG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Type of integrated circuit: PMIC
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward; resonant LLC
Operating temperature: -40...125°C
Output current: 4...8A
Number of channels: 1
Operating voltage: 7.8...37V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25256VI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25256YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25256XI-T2 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| NSVDTC143ZET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Power dissipation: 0.3W
Application: automotive industry
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Power dissipation: 0.3W
Application: automotive industry
Current gain: 80...200
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C33LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 14945 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 85+ | 4.86 грн |
| 125+ | 3.29 грн |
| 152+ | 2.73 грн |
| 500+ | 1.80 грн |
| 1000+ | 1.46 грн |
| 1500+ | 1.30 грн |
| 3000+ | 1.14 грн |
| MC10EP16DG |
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Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Integrated circuit features: differential
Technology: ECL
Supply voltage: 3...5.5V
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; ECL; SMD; SOIC8; 3÷5.5V
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Integrated circuit features: differential
Technology: ECL
Supply voltage: 3...5.5V
товару немає в наявності
В кошику
од. на суму грн.
| NDP6060L |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 60nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 60nC
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 256.32 грн |
| 10+ | 142.48 грн |
| NDS352AP |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -900mA
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -900mA
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3nC
на замовлення 3009 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.33 грн |
| 12+ | 35.25 грн |
| 14+ | 30.31 грн |
| 50+ | 21.74 грн |
| 100+ | 18.94 грн |
| 250+ | 15.98 грн |
| 500+ | 14.17 грн |
| 1000+ | 13.09 грн |
| FDV304P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.46A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 1.5nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.46A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 1.5nC
на замовлення 16491 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.98 грн |
| 70+ | 5.93 грн |
| 92+ | 4.50 грн |
| 105+ | 3.94 грн |
| 500+ | 3.05 грн |
| 1000+ | 2.82 грн |
| 3000+ | 2.63 грн |
| 6000+ | 2.54 грн |
| 9000+ | 2.48 грн |
| FDV301N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 55844 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.76 грн |
| 53+ | 7.91 грн |
| 61+ | 6.84 грн |
| 89+ | 4.68 грн |
| 106+ | 3.91 грн |
| 500+ | 2.67 грн |
| 1000+ | 2.45 грн |
| 3000+ | 2.15 грн |
| 6000+ | 2.02 грн |
| FDV303N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 12311 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.74 грн |
| 35+ | 12.11 грн |
| 50+ | 8.66 грн |
| 100+ | 7.52 грн |
| 500+ | 5.53 грн |
| 1000+ | 4.74 грн |
| 1500+ | 4.36 грн |
| 3000+ | 3.78 грн |
| 6000+ | 3.32 грн |
| FDN360P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 4580 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.46 грн |
| 13+ | 31.95 грн |
| 15+ | 27.51 грн |
| 50+ | 19.02 грн |
| 100+ | 16.31 грн |
| 500+ | 11.86 грн |
| 1000+ | 10.54 грн |
| 1500+ | 9.97 грн |
| 3000+ | 8.98 грн |
| FDC658AP |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8.1nC
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8.1nC
Technology: PowerTrench®
на замовлення 477 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.31 грн |
| 10+ | 43.81 грн |
| 11+ | 37.97 грн |
| 50+ | 26.85 грн |
| 100+ | 23.31 грн |
| FDN327N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 6.3nC
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 6.3nC
Technology: PowerTrench®
на замовлення 1661 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 40.80 грн |
| 16+ | 26.19 грн |
| 18+ | 23.39 грн |
| 50+ | 18.12 грн |
| 100+ | 16.06 грн |
| 500+ | 11.69 грн |
| 1000+ | 9.97 грн |
| 1500+ | 9.06 грн |
| ADT7461AARMZ-R |
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Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ADT7461ARMZ-R7 |
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Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
товару немає в наявності
В кошику
од. на суму грн.
| ADT7461ARZ-REEL |
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Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
Category: Temperature transducers
Description: IC: temperature sensor; MSOP8; 3÷3.6VDC; -40÷120°C; 2.55V
Case: MSOP8
Type of integrated circuit: temperature sensor
Operating temperature: -40...120°C
Supply voltage: 3...3.6V DC
Threshold on-voltage: 2.55V
товару немає в наявності
В кошику
од. на суму грн.
| NSR1020MW2T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 1A
Max. forward voltage: 0.54V
Max. off-state voltage: 20V
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 1A
Max. forward voltage: 0.54V
Max. off-state voltage: 20V
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
на замовлення 1600 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.74 грн |
| 40+ | 10.54 грн |
| 58+ | 7.17 грн |
| 100+ | 6.05 грн |
| 500+ | 4.13 грн |
| 1000+ | 3.53 грн |
| 1500+ | 3.24 грн |
| 20414-009-XTD |
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 35170.40 грн |
| MBR360RLG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 1.08V
Max. forward impulse current: 80A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 1.08V
Max. forward impulse current: 80A
на замовлення 1762 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.49 грн |
| 22+ | 19.27 грн |
| 23+ | 18.04 грн |
| 50+ | 17.05 грн |
| 100+ | 16.39 грн |
| 500+ | 13.26 грн |
| 1000+ | 12.19 грн |
| 1500+ | 11.69 грн |
| FGY160T65SPD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1024.41 грн |
| AFGY160T65SPD-B4 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| FCD360N65S3R0 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 10A; 83W; DPAK; single transistor
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 83W
Gate charge: 18nC
Technology: PowerTrench®
Semiconductor structure: single transistor
On-state resistance: 0.36Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 10A; 83W; DPAK; single transistor
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 83W
Gate charge: 18nC
Technology: PowerTrench®
Semiconductor structure: single transistor
On-state resistance: 0.36Ω
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FCPF360N65S3R0L-F154 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 10A; 27W; TO220
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 10A
Case: TO220
Gate-source voltage: 30V
Mounting: THT
Kind of channel: enhancement
Power dissipation: 27W
Gate charge: 18nC
Technology: PowerTrench®
On-state resistance: 0.36Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 10A; 27W; TO220
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 10A
Case: TO220
Gate-source voltage: 30V
Mounting: THT
Kind of channel: enhancement
Power dissipation: 27W
Gate charge: 18nC
Technology: PowerTrench®
On-state resistance: 0.36Ω
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MM74HCT574WM |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
на замовлення 272 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.89 грн |
| 12+ | 36.90 грн |
| 25+ | 34.26 грн |
| 74VHCT574AM |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| 74VHCT574AMTC |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| 74VHCT574AMTCX |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| MM74HCT574WMX |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
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| MC74HCT574ADTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state; non-inverting
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state; non-inverting
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
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| MC74HCT574ADWR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Mounting: SMD
Operating temperature: -55...125°C
Family: HCT
Kind of output: 3-state
Technology: CMOS; TTL
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Mounting: SMD
Operating temperature: -55...125°C
Family: HCT
Kind of output: 3-state
Technology: CMOS; TTL
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
товару немає в наявності
Мінімальне замовлення: 1000 шт
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од. на суму грн.
| MM74HCT574MTCX |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
товару немає в наявності
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| MM74HCT574SJX |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MC74VHCT574ADTRG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| MC74VHCT574ADWG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHCT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: positive-edge-triggered
Technology: CMOS
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
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| MC74VHCT574ADWRG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; VHCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Operating temperature: -40...85°C
Family: VHCT
Kind of output: 3-state
Technology: CMOS; TTL
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS,TTL; VHCT; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Operating temperature: -40...85°C
Family: VHCT
Kind of output: 3-state
Technology: CMOS; TTL
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MOC3011M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC301XM
Case: DIP6
Mounting: THT
Manufacturer series: MOC301XM
Kind of output: triac
Type of optocoupler: optotriac
Trigger current: 60mA
Number of channels: 1
Max. off-state voltage: 3V
Output voltage: 400V
Insulation voltage: 4.17kV
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC301XM
Case: DIP6
Mounting: THT
Manufacturer series: MOC301XM
Kind of output: triac
Type of optocoupler: optotriac
Trigger current: 60mA
Number of channels: 1
Max. off-state voltage: 3V
Output voltage: 400V
Insulation voltage: 4.17kV
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.78 грн |
| 16+ | 26.52 грн |
| 25+ | 24.05 грн |
| MOC3011SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Case: PDIP6
Mounting: SMD
Manufacturer series: MOC301XM
Kind of output: triac; without zero voltage crossing driver
Type of optocoupler: optotriac
Trigger current: 5mA
Number of channels: 1
Max. off-state voltage: 3V
Output voltage: 250V
Slew rate: 1kV/μs
Insulation voltage: 4.17kV
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Case: PDIP6
Mounting: SMD
Manufacturer series: MOC301XM
Kind of output: triac; without zero voltage crossing driver
Type of optocoupler: optotriac
Trigger current: 5mA
Number of channels: 1
Max. off-state voltage: 3V
Output voltage: 250V
Slew rate: 1kV/μs
Insulation voltage: 4.17kV
на замовлення 990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.22 грн |
| 12+ | 35.83 грн |
| 100+ | 25.28 грн |
| 500+ | 23.31 грн |
| 1SMB5934BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 5079 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.51 грн |
| 34+ | 12.35 грн |
| 42+ | 9.97 грн |
| 65+ | 6.42 грн |
| 100+ | 6.18 грн |
| 1SMB5956BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 3716 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.08 грн |
| 41+ | 10.21 грн |
| 45+ | 9.22 грн |
| 53+ | 7.82 грн |
| 100+ | 7.41 грн |
| 500+ | 6.75 грн |
| 1000+ | 6.67 грн |
| 1SMB5935BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 7309 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.40 грн |
| 27+ | 15.32 грн |
| 32+ | 13.18 грн |
| 37+ | 11.20 грн |
| 50+ | 9.06 грн |
| 100+ | 7.74 грн |
| 500+ | 7.49 грн |
| 1SMB5937BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 33V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 33V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 3794 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 16.85 грн |
| 35+ | 11.86 грн |
| 40+ | 10.46 грн |
| 50+ | 8.73 грн |
| 100+ | 7.74 грн |
| 200+ | 6.92 грн |
| 500+ | 6.67 грн |
| 1SMB5928BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
на замовлення 954 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 24.83 грн |
| 24+ | 17.30 грн |
| 29+ | 14.66 грн |
| 50+ | 9.97 грн |
| 100+ | 8.65 грн |
| 500+ | 7.25 грн |
| 1SMB5927BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.27 грн |
| 20+ | 20.59 грн |
| 25+ | 16.64 грн |
| 26+ | 15.65 грн |
| 2N6517G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 500mA; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power: 625mW
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 500mA; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power: 625mW
товару немає в наявності
Мінімальне замовлення: 3 шт
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од. на суму грн.
| SBCX19LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FJI5603DTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 100W
Current gain: 20...35
Mounting: THT
Frequency: 5MHz
Kind of package: tube
Case: I2PAK
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 100W
Current gain: 20...35
Mounting: THT
Frequency: 5MHz
Kind of package: tube
Case: I2PAK
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 140.14 грн |
| BDX33CG |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 10A; 70W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 70W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 10A; 70W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 70W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 112.64 грн |
| 10+ | 55.10 грн |
| 50+ | 44.06 грн |
| NCV2902DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; 3÷32VDC; SO14; 13mV; 200nA
Type of integrated circuit: operational amplifier
Case: SO14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Input offset current: 200nA
Number of channels: quad; 4
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; 3÷32VDC; SO14; 13mV; 200nA
Type of integrated circuit: operational amplifier
Case: SO14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Input offset current: 200nA
Number of channels: quad; 4
Bandwidth: 3MHz
товару немає в наявності
В кошику
од. на суму грн.
| NCV2902DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; 3÷32VDC; TSSOP14; 13mV
Type of integrated circuit: operational amplifier
Case: TSSOP14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Input offset current: 200nA
Number of channels: quad; 4
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; 3÷32VDC; TSSOP14; 13mV
Type of integrated circuit: operational amplifier
Case: TSSOP14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Input offset current: 200nA
Number of channels: quad; 4
Bandwidth: 3MHz
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ33T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
на замовлення 1146 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 97+ | 4.28 грн |
| 153+ | 2.69 грн |
| 500+ | 1.89 грн |
| 1000+ | 1.70 грн |
| SZMMSZ33ET1G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
на замовлення 2040 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.30 грн |
| 51+ | 8.15 грн |
| 500+ | 3.36 грн |
| 1000+ | 3.14 грн |

























