Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MM74HC245AWM | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; HC; 80uA Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Quiescent current: 80µA Manufacturer series: HC |
на замовлення 325 шт: термін постачання 21-30 дні (днів) |
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MM74HC245AWMX | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4448WS | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Case: SOD323F Kind of package: reel; tape |
на замовлення 2405 шт: термін постачання 21-30 дні (днів) |
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BD13910STU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO126ISO Current gain: 40...250 Mounting: THT Kind of package: tube |
на замовлення 659 шт: термін постачання 21-30 дні (днів) |
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BD13916S | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.25W Case: TO126ISO Current gain: 100...250 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD13916STU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO126ISO Current gain: 100...250 Mounting: THT Kind of package: tube |
на замовлення 1595 шт: термін постачання 21-30 дні (днів) |
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BD139G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk |
на замовлення 512 шт: термін постачання 21-30 дні (днів) |
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2N7000-D26Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape |
на замовлення 2296 шт: термін постачання 21-30 дні (днів) |
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2N7000-D74Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N7000-D75Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape |
на замовлення 644 шт: термін постачання 21-30 дні (днів) |
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2N7000BU | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N7000TA | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack |
на замовлення 711 шт: термін постачання 21-30 дні (днів) |
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BS170 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Technology: DMOS |
на замовлення 9771 шт: термін постачання 21-30 дні (днів) |
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BS170-D75Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 918 шт: термін постачання 21-30 дні (днів) |
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BS170-D26Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 984 шт: термін постачання 21-30 дні (днів) |
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BS170-D27Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 5288 шт: термін постачання 21-30 дні (днів) |
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BC807-40LT1G | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 879 шт: термін постачання 21-30 дні (днів) |
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BC807-40LT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
CAT24C08C4ATR | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CAT24C08C4CTR | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CAT24C08C5ATR | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BD14010STU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO Collector current: 1.5A Type of transistor: PNP Power dissipation: 12.5W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO126ISO Collector-emitter voltage: 80V Current gain: 63...160 |
на замовлення 1870 шт: термін постачання 21-30 дні (днів) |
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BD140G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225 Collector current: 1.5A Type of transistor: PNP Power dissipation: 12.5W Polarisation: bipolar Kind of package: bulk Mounting: THT Case: TO225 Collector-emitter voltage: 80V Current gain: 40...250 |
на замовлення 462 шт: термін постачання 21-30 дні (днів) |
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MMBD1401 | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
на замовлення 2727 шт: термін постачання 21-30 дні (днів) |
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MMBD1403 | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: double series Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBD1404 | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: common cathode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
на замовлення 1864 шт: термін постачання 21-30 дні (днів) |
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MMBD1404A | ONSEMI |
![]() Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 175V Max. forward voltage: 1.25V Load current: 0.6A Semiconductor structure: common cathode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBD1405 | ONSEMI |
![]() ![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: common anode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
на замовлення 724 шт: термін постачання 21-30 дні (днів) |
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MMBD1405A | ONSEMI |
![]() ![]() Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 175V Max. forward voltage: 1.25V Load current: 0.6A Semiconductor structure: common anode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N3904BU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 300MHz |
на замовлення 305 шт: термін постачання 21-30 дні (днів) |
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2N3904TFR | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
на замовлення 1394 шт: термін постачання 21-30 дні (днів) |
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BSS138L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A |
на замовлення 5305 шт: термін постачання 21-30 дні (днів) |
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BSS138LT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 13324 шт: термін постачання 21-30 дні (днів) |
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BSS138LT3G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A |
на замовлення 7000 шт: термін постачання 21-30 дні (днів) |
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BSS138W | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.21A Power dissipation: 0.34W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 5.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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MMBFJ113 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA Mounting: SMD Case: SOT23 Gate current: 50mA Drain current: 2mA On-state resistance: 100Ω Type of transistor: N-JFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate-source voltage: -35V |
на замовлення 1786 шт: термін постачання 21-30 дні (днів) |
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BYW80-200G | ONSEMI |
![]() ![]() Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. load current: 16A Heatsink thickness: 1.15...1.39mm |
на замовлення 1458 шт: термін постачання 21-30 дні (днів) |
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1N4448TR | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.5W |
на замовлення 9443 шт: термін постачання 21-30 дні (днів) |
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LM2904DR2G | ONSEMI |
![]() ![]() Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Case: SO8 Slew rate: 0.3V/μs Operating temperature: -40...105°C Input offset voltage: 10mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: reel; tape Input bias current: 50nA Input offset current: 45...200nA Number of channels: 2 |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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FGH40N60SFDTU | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 128 шт: термін постачання 21-30 дні (днів) |
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FGH40N60SMD | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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FGH40N60UFDTU | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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FGAF40N60UFDTU | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Power dissipation: 40W Case: TO3PF Mounting: THT Gate charge: 150nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 160A Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC78LC33NTRG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.053V Output voltage: 3.3V Output current: 80mA Case: TSOT23-5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 4.3...12V |
на замовлення 3127 шт: термін постачання 21-30 дні (днів) |
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BCP53-10T1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 1303 шт: термін постачання 21-30 дні (днів) |
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BCP53-16T1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2574DW-ADJR2G | ONSEMI |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: SO16-W Mounting: SMD Topology: buck Number of channels: 1 Kind of package: reel; tape |
на замовлення 995 шт: термін постачання 21-30 дні (днів) |
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LM2574N-5G | ONSEMI |
![]() ![]() Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 5V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
на замовлення 298 шт: термін постачання 21-30 дні (днів) |
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LM2574N-ADJG | ONSEMI |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
на замовлення 180 шт: термін постачання 21-30 дні (днів) |
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BC856BDW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 669 шт: термін постачання 21-30 дні (днів) |
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BC856BDW1T3G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC856BLT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2080 шт: термін постачання 21-30 дні (днів) |
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BC856BLT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC856BM3T5G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.265W Case: SOT723 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2481 шт: термін постачання 21-30 дні (днів) |
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MMBT2222ALT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 2489 шт: термін постачання 21-30 дні (днів) |
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MMBT2222ALT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT2222ATT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC75; SOT416 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT2222AWT1G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 5297 шт: термін постачання 21-30 дні (днів) |
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MMBT2222AWT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N5408RLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA Leakage current: 50µA Kind of package: reel; tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Case: DO27 Max. forward voltage: 1V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A |
на замовлення 1113 шт: термін постачання 21-30 дні (днів) |
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MM74HC245AWM |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; HC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Quiescent current: 80µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; HC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Quiescent current: 80µA
Manufacturer series: HC
на замовлення 325 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 105.46 грн |
10+ | 60.32 грн |
21+ | 42.98 грн |
57+ | 40.66 грн |
114+ | 39.92 грн |
266+ | 39.09 грн |
MM74HC245AWMX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HC
товару немає в наявності
В кошику
од. на суму грн.
1N4448WS |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
на замовлення 2405 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 6.84 грн |
80+ | 4.71 грн |
117+ | 3.22 грн |
500+ | 2.44 грн |
572+ | 1.54 грн |
1572+ | 1.46 грн |
BD13910STU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 40...250
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 40...250
Mounting: THT
Kind of package: tube
на замовлення 659 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.47 грн |
11+ | 35.81 грн |
38+ | 23.55 грн |
104+ | 22.28 грн |
300+ | 21.98 грн |
540+ | 21.38 грн |
BD13916S |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
BD13916STU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
на замовлення 1595 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 59.57 грн |
10+ | 42.61 грн |
25+ | 34.46 грн |
43+ | 20.56 грн |
118+ | 19.44 грн |
540+ | 18.76 грн |
1020+ | 18.69 грн |
BD139G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
на замовлення 512 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 67.62 грн |
10+ | 50.16 грн |
32+ | 27.58 грн |
88+ | 26.09 грн |
500+ | 25.04 грн |
2N7000-D26Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
на замовлення 2296 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.18 грн |
22+ | 17.42 грн |
100+ | 12.71 грн |
115+ | 7.70 грн |
315+ | 7.25 грн |
2000+ | 7.03 грн |
2N7000-D74Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
товару немає в наявності
В кошику
од. на суму грн.
2N7000-D75Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
на замовлення 644 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.62 грн |
18+ | 20.86 грн |
25+ | 16.30 грн |
100+ | 11.21 грн |
113+ | 7.85 грн |
310+ | 7.40 грн |
2N7000BU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
2N7000TA |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
на замовлення 711 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.37 грн |
20+ | 19.58 грн |
25+ | 15.92 грн |
50+ | 13.31 грн |
100+ | 11.06 грн |
118+ | 7.48 грн |
324+ | 7.10 грн |
BS170 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
на замовлення 9771 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.12 грн |
30+ | 12.86 грн |
39+ | 9.79 грн |
100+ | 7.48 грн |
143+ | 6.20 грн |
391+ | 5.91 грн |
500+ | 5.68 грн |
1000+ | 5.61 грн |
BS170-D75Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 918 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 25.76 грн |
19+ | 20.63 грн |
50+ | 14.50 грн |
100+ | 11.81 грн |
104+ | 8.52 грн |
284+ | 8.07 грн |
500+ | 7.85 грн |
BS170-D26Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 984 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.62 грн |
19+ | 20.41 грн |
50+ | 13.68 грн |
100+ | 11.59 грн |
103+ | 8.67 грн |
281+ | 8.15 грн |
BS170-D27Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 5288 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.59 грн |
32+ | 11.96 грн |
50+ | 9.42 грн |
100+ | 8.45 грн |
139+ | 6.35 грн |
381+ | 6.05 грн |
1000+ | 5.91 грн |
BC807-40LT1G | ![]() |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 879 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 8.86 грн |
61+ | 6.13 грн |
76+ | 4.93 грн |
101+ | 3.71 грн |
125+ | 3.00 грн |
151+ | 2.49 грн |
625+ | 1.41 грн |
BC807-40LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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CAT24C08C4ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08C4CTR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08C5ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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од. на суму грн.
BD14010STU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
Collector-emitter voltage: 80V
Current gain: 63...160
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
Collector-emitter voltage: 80V
Current gain: 63...160
на замовлення 1870 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 76.48 грн |
10+ | 47.17 грн |
25+ | 43.21 грн |
29+ | 30.95 грн |
79+ | 29.23 грн |
BD140G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO225
Collector-emitter voltage: 80V
Current gain: 40...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO225
Collector-emitter voltage: 80V
Current gain: 40...250
на замовлення 462 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 67.62 грн |
10+ | 46.79 грн |
27+ | 32.82 грн |
74+ | 31.02 грн |
250+ | 29.97 грн |
MMBD1401 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
на замовлення 2727 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.10 грн |
39+ | 9.79 грн |
59+ | 6.40 грн |
100+ | 5.40 грн |
225+ | 3.92 грн |
500+ | 3.90 грн |
618+ | 3.71 грн |
1000+ | 3.57 грн |
MMBD1403 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
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MMBD1404 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
на замовлення 1864 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.00 грн |
35+ | 10.84 грн |
53+ | 7.06 грн |
100+ | 6.01 грн |
232+ | 3.80 грн |
638+ | 3.60 грн |
1000+ | 3.46 грн |
MMBD1404A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 175V
Max. forward voltage: 1.25V
Load current: 0.6A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 175V
Max. forward voltage: 1.25V
Load current: 0.6A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
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MMBD1405 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
на замовлення 724 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 16.90 грн |
37+ | 10.32 грн |
50+ | 8.00 грн |
100+ | 7.25 грн |
192+ | 4.63 грн |
527+ | 4.34 грн |
MMBD1405A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 175V
Max. forward voltage: 1.25V
Load current: 0.6A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 175V
Max. forward voltage: 1.25V
Load current: 0.6A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
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2N3904BU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 305 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 17.71 грн |
43+ | 8.75 грн |
100+ | 4.74 грн |
260+ | 3.39 грн |
2N3904TFR |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 1394 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 12.88 грн |
44+ | 8.67 грн |
52+ | 7.25 грн |
78+ | 4.81 грн |
100+ | 4.13 грн |
260+ | 3.39 грн |
715+ | 3.21 грн |
BSS138L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
на замовлення 5305 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.27 грн |
43+ | 8.75 грн |
67+ | 5.65 грн |
250+ | 3.40 грн |
429+ | 2.06 грн |
1180+ | 1.94 грн |
BSS138LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 13324 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.49 грн |
40+ | 9.49 грн |
100+ | 7.74 грн |
250+ | 6.52 грн |
271+ | 3.27 грн |
744+ | 3.09 грн |
BSS138LT3G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
на замовлення 7000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 16.90 грн |
37+ | 10.32 грн |
46+ | 8.15 грн |
100+ | 4.07 грн |
286+ | 3.09 грн |
786+ | 2.92 грн |
2500+ | 2.80 грн |
BSS138W |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 209 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 21.74 грн |
37+ | 10.32 грн |
50+ | 8.09 грн |
100+ | 7.31 грн |
195+ | 4.53 грн |
MMBFJ113 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Mounting: SMD
Case: SOT23
Gate current: 50mA
Drain current: 2mA
On-state resistance: 100Ω
Type of transistor: N-JFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -35V
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Mounting: SMD
Case: SOT23
Gate current: 50mA
Drain current: 2mA
On-state resistance: 100Ω
Type of transistor: N-JFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -35V
на замовлення 1786 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 21.74 грн |
28+ | 13.83 грн |
33+ | 11.51 грн |
50+ | 10.02 грн |
100+ | 8.75 грн |
139+ | 6.35 грн |
381+ | 6.05 грн |
1000+ | 5.83 грн |
BYW80-200G | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
на замовлення 1458 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 90.96 грн |
10+ | 50.46 грн |
20+ | 45.22 грн |
50+ | 43.58 грн |
54+ | 42.76 грн |
100+ | 41.11 грн |
1N4448TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
на замовлення 9443 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 6.88 грн |
139+ | 2.69 грн |
188+ | 1.99 грн |
250+ | 1.71 грн |
500+ | 1.51 грн |
1000+ | 1.32 грн |
1027+ | 0.86 грн |
2827+ | 0.81 грн |
LM2904DR2G | ![]() |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Case: SO8
Slew rate: 0.3V/μs
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Number of channels: 2
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Case: SO8
Slew rate: 0.3V/μs
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Number of channels: 2
на замовлення 72 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.00 грн |
23+ | 16.59 грн |
25+ | 15.47 грн |
FGH40N60SFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 128 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 416.99 грн |
3+ | 332.64 грн |
4+ | 230.98 грн |
11+ | 218.27 грн |
FGH40N60SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 38 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 391.23 грн |
3+ | 321.42 грн |
4+ | 278.82 грн |
9+ | 263.87 грн |
FGH40N60UFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 209 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 399.28 грн |
4+ | 222.76 грн |
11+ | 210.80 грн |
120+ | 210.05 грн |
FGAF40N60UFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 160A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
MC78LC33NTRG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.053V
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.053V
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
на замовлення 3127 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 29.30 грн |
42+ | 21.15 грн |
115+ | 20.03 грн |
500+ | 19.29 грн |
BCP53-10T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 1303 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.42 грн |
16+ | 23.47 грн |
50+ | 18.61 грн |
84+ | 10.46 грн |
231+ | 9.87 грн |
1000+ | 9.64 грн |
BCP53-16T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
товару немає в наявності
В кошику
од. на суму грн.
LM2574DW-ADJR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
на замовлення 995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 225.40 грн |
10+ | 94.18 грн |
26+ | 89.70 грн |
50+ | 88.95 грн |
250+ | 87.46 грн |
LM2574N-5G | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
на замовлення 298 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 192.40 грн |
10+ | 113.62 грн |
12+ | 73.26 грн |
33+ | 68.77 грн |
LM2574N-ADJG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
на замовлення 180 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 181.12 грн |
10+ | 109.14 грн |
11+ | 80.73 грн |
30+ | 76.99 грн |
BC856BDW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 669 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.24 грн |
107+ | 3.51 грн |
115+ | 3.27 грн |
250+ | 3.09 грн |
394+ | 2.24 грн |
500+ | 2.04 грн |
BC856BDW1T3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
BC856BLT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2080 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 6.89 грн |
95+ | 3.96 грн |
130+ | 2.89 грн |
149+ | 2.51 грн |
500+ | 1.79 грн |
817+ | 1.08 грн |
BC856BLT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
BC856BM3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2481 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.27 грн |
50+ | 7.48 грн |
62+ | 6.05 грн |
131+ | 2.86 грн |
473+ | 1.87 грн |
1000+ | 1.85 грн |
1299+ | 1.76 грн |
MMBT2222ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 2489 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.24 грн |
99+ | 3.81 грн |
148+ | 2.54 грн |
174+ | 2.15 грн |
1000+ | 1.37 грн |
1031+ | 0.85 грн |
MMBT2222ALT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику
од. на суму грн.
MMBT2222ATT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику
од. на суму грн.
MMBT2222AWT1G | ![]() |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 5297 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.05 грн |
68+ | 5.53 грн |
84+ | 4.48 грн |
110+ | 3.41 грн |
135+ | 2.78 грн |
163+ | 2.29 грн |
715+ | 1.23 грн |
1964+ | 1.17 грн |
MMBT2222AWT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику
од. на суму грн.
1N5408RLG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Case: DO27
Max. forward voltage: 1V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Case: DO27
Max. forward voltage: 1V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
на замовлення 1113 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 22.54 грн |
32+ | 12.03 грн |
50+ | 10.02 грн |
100+ | 9.12 грн |
116+ | 7.62 грн |
319+ | 7.18 грн |