| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SZMMSZ4703T1G | onsemi |
Description: DIODE ZENER 16V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 12.1 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KAI-1020-CBA-FD-BA | onsemi |
Description: IMAGE SENSOR CCD 1MP 64CLCCPackaging: Bulk Package / Case: 64-BCQFN Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 7.4µm x 7.4µm Active Pixel Array: 1000H x 1000V Supplier Device Package: 64-CLCC (18.29x18.29) Frames per Second: 30.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KAI-01050-FBA-FD-BA | onsemi |
Description: IMAGE SENSOR CCD 1MP 64CLCCPackaging: Bulk Package / Case: 64-BCQFN Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.5µm x 5.5µm Active Pixel Array: 1024H x 1024V Supplier Device Package: 64-CLCC (18.29x18.29) Frames per Second: 120 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| KAI-1020-FBA-FD-BA | onsemi |
Description: INTERLINE CCD IMAGE SENPackaging: Tray Package / Case: 64-VFQFN Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 7.4µm x 7.4µm Active Pixel Array: 1000H x 1000V Supplier Device Package: 64-CLCC (18.29x18.29) Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SZMMBZ5235BLT3G | onsemi |
Description: DIODE ZENER 6.8V 225MW SOT23-3Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 5 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZMMBZ5235BLT3G | onsemi |
Description: DIODE ZENER 6.8V 225MW SOT23-3Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 5 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBRM110LT3G | onsemi |
Description: DIODE SCHOTTKY 10V 1A POWERMITEPackaging: Bulk Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 365 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 10 V |
на замовлення 18370 шт: термін постачання 21-31 дні (днів) |
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MBRM110LT1 | onsemi |
Description: DIODE SCHOTTKY 10V 1A POWERMITEPackaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 365 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVBG160N120SC1 | onsemi |
Description: SICFET N-CH 1200V 19.5A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NVBG160N120SC1 | onsemi |
Description: SICFET N-CH 1200V 19.5A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 1212 шт: термін постачання 21-31 дні (днів) |
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NTBG160N120SC1 | onsemi |
Description: SICFET N-CH 1200V 19.5A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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NTBG160N120SC1 | onsemi |
Description: SICFET N-CH 1200V 19.5A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V |
на замовлення 1620 шт: термін постачання 21-31 дні (днів) |
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NTHL160N120SC1 | onsemi |
Description: SICFET N-CH 1200V 17A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V |
на замовлення 43847 шт: термін постачання 21-31 дні (днів) |
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NVHL160N120SC1 | onsemi |
Description: SICFET N-CH 1200V 17A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 11659 шт: термін постачання 21-31 дні (днів) |
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NVH4L160N120SC1 | onsemi |
Description: SICFET N-CH 1200V 17.3A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 1703 шт: термін постачання 21-31 дні (днів) |
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LC75700TS-MPB-E | onsemi |
Description: IC INTERFACE SPECIALIZED 20TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: CCB Voltage - Supply: 2.7V ~ 5.5V Applications: Key Scanning LSI Supplier Device Package: 20-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC100E241FN | onsemi |
Description: IC REGISTER SCAN 8BIT ECL 28PLCCPackaging: Tube Package / Case: 28-LCC (J-Lead) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: 0°C ~ 85°C Voltage - Supply: 4.2V ~ 5.7V Supplier Device Package: 28-PLCC (11.51x11.51) Number of Bits per Element: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC100E241FNG | onsemi |
Description: IC REGISTER SCAN 8BIT ECL 28PLCCPackaging: Bulk Package / Case: 28-LCC (J-Lead) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: 0°C ~ 85°C Voltage - Supply: 4.2V ~ 5.7V Supplier Device Package: 28-PLCC (11.51x11.51) Number of Bits per Element: 8 |
на замовлення 2016 шт: термін постачання 21-31 дні (днів) |
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LC75822EHS-T-E | onsemi |
Description: IC DRVR 53/104 SEGMENT 64QIPE Packaging: Bulk Package / Case: 64-BQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 53 Segment, 104 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 6.5V Supplier Device Package: 64-QIPE (14x14) |
на замовлення 2396 шт: термін постачання 21-31 дні (днів) |
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| LC75834W-E | onsemi |
Description: IC DRVR 136 SEGMENT 48SQFP Packaging: Tray Package / Case: 48-LQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 136 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 6V Supplier Device Package: 48-SQFP (7x7) Current - Supply: 230 µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LC75832WS-TBM-E | onsemi |
Description: IC DRVR 54/108 SEGMENT 64STQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 54 Segment, 108 Segment Operating Temperature: -40°C ~ 105°C Voltage - Supply: 2.7V ~ 6V Supplier Device Package: 64-SQFP (10x10) Current - Supply: 250 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LC75833E-E | onsemi |
Description: IC DRVR 105 SEGMENT 48QFPPackaging: Tray Package / Case: 48-BQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 105 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 6V Supplier Device Package: 48-QFP Current - Supply: 250 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LC75836WH-E | onsemi |
Description: IC DRVR 140 SEGMENT 48SQFP Packaging: Tray Package / Case: 48-LQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 140 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 6V Supplier Device Package: 48-SQFP (7x7) Current - Supply: 450 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LC75822ED-E | onsemi |
Description: IC DRVR 53/104 SEGMENT 64QIPE Packaging: Tray Package / Case: 64-BQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 53 Segment, 104 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 6.5V Supplier Device Package: 64-QIPE (14x14) |
на замовлення 11601 шт: термін постачання 21-31 дні (днів) |
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LC75852W-E | onsemi |
Description: IC DRVR 90 SEGMENT 64SQFPPackaging: Tray Package / Case: 64-LQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 90 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 6V Supplier Device Package: 64-SQFP Current - Supply: 1.4 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LV88561JAGEVB | onsemi |
Description: EVAL BOARD LV88561Packaging: Box Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: LV88561 Supplied Contents: Board(s) Primary Attributes: Motors (BLDC) Embedded: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBR3045STG | onsemi |
Description: DIODE ARRAY SCHOT 45V 15A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
на замовлення 183222 шт: термін постачання 21-31 дні (днів) |
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MBR3045STG | onsemi |
Description: DIODE ARRAY SCHOT 45V 15A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV7446MW0R2G | onsemi |
Description: IC TRANSCEIVER 2/2 14DFNWPackaging: Tape & Reel (TR) Package / Case: 14-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 2/2 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: 14-DFNW (4.5x3) Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV7446MW0R2G | onsemi |
Description: IC TRANSCEIVER 2/2 14DFNWPackaging: Cut Tape (CT) Package / Case: 14-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 2/2 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: 14-DFNW (4.5x3) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4890 шт: термін постачання 21-31 дні (днів) |
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| NVXR22S90M2SPC | onsemi |
Description: SIC 900V 6D MOSFET V-SSDC SPCPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 900W (Tj) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 510A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 400V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 510A, 18V Gate Charge (Qg) (Max) @ Vgs: 1800nC @ 18V Vgs(th) (Max) @ Id: 4.3V @ 150mA Supplier Device Package: SSDC39 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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FFPF04F150STU | onsemi |
Description: DIODE GEN PURP 1.5KV 4A TO220FPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 170 ns Technology: Avalanche Current - Average Rectified (Io): 4A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FFPF06F150STU | onsemi |
Description: DIODE GEN PURP 1.5KV 6A TO220FPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 170 ns Technology: Avalanche Current - Average Rectified (Io): 6A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A Current - Reverse Leakage @ Vr: 7 µA @ 1500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FFPF05U60DNTU | onsemi |
Description: DIODE ARR AVAL 600V 5A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Avalanche Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220F-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A Current - Reverse Leakage @ Vr: 2.5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FFPF06U20DPTU | onsemi |
Description: DIODE ARR AVAL 200V 6A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Avalanche Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-220F-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A Current - Reverse Leakage @ Vr: 6 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FFPF06U20DNTU | onsemi |
Description: DIODE ARR AVAL 200V 6A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Avalanche Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-220F-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A Current - Reverse Leakage @ Vr: 6 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FFPF06U150STU | onsemi |
Description: DIODE AVAL 1500V 6A TO220F2LPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Avalanche Current - Average Rectified (Io): 6A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 1500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FFPF04U40DNTU | onsemi |
Description: DIODE ARR AVAL 400V 4A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Avalanche Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: TO-220F-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP152MX150280TCG | onsemi |
Description: IC REG LINEAR 1.5V/2.8V 6-XDFNPackaging: Bulk Package / Case: 6-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.25V Number of Regulators: 2 Supplier Device Package: 6-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 1.5V, 2.8V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.5V @ 150mA, 0.26V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 200 µA |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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NCP154MX150280TAG | onsemi |
Description: IC REG LINEAR 1.5V/2.8V 8-XDFNPackaging: Bulk Package / Case: 8-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA, 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.25V Number of Regulators: 2 Supplier Device Package: 8-XDFN (1.6x1.2) Voltage - Output (Min/Fixed): 1.5V, 2.8V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.47V @ 300mA, 0.27V @ 300mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 200 µA |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5233DW1T3G | onsemi |
Description: TRANS NPN 50V DUAL BIPO SC88-6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5233DW1T3G | onsemi |
Description: TRANS NPN 50V DUAL BIPO SC88-6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| AS0148AT2C00XESM0-TPBR | onsemi |
Description: 1MP 1/4 CIS SOC Packaging: Tray Output Type: Serial Sensor Type: Host Command Interface Sensor Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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CAT24AA02WI-GT3 | onsemi |
Description: IC EEPROM 2KBIT 400KHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLV74HC02ADTR2G | onsemi |
Description: IC GATE NOR 4CH 2-INP 14TSSOP Packaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
на замовлення 1151 шт: термін постачання 21-31 дні (днів) |
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CS3361YDR14G | onsemi |
Description: IC DRIVER FET ALT REG 14-SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 9V ~ 17V Applications: Alternator, 3-Phase Current - Supply: 10mA Supplier Device Package: 14-SOIC Grade: Automotive |
на замовлення 4600 шт: термін постачання 21-31 дні (днів) |
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CS3351YDR14 | onsemi |
Description: IC DRVR DARL ALT REG VOLT 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 9V ~ 17V Applications: Alternator, 3-Phase Current - Supply: 12mA Supplier Device Package: 14-SOIC Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CS3351YD14 | onsemi |
Description: IC DRIVER DARL ALT REG 14-SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 9V ~ 17V Applications: Alternator, 3-Phase Current - Supply: 12mA Supplier Device Package: 14-SOIC Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT25320VI-G | onsemi |
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| CAT25C128XI-T2 | onsemi |
Description: CAT25C128 - 128-KBit SPI SerialPackaging: Bulk |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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CAT25C128S | onsemi |
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 6V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Access Time: 80 ns Memory Organization: 16K x 8 DigiKey Programmable: Not Verified |
на замовлення 9509 шт: термін постачання 21-31 дні (днів) |
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| NTTFS5CS73NLTWG | onsemi |
Description: T6 60V NCH LL IN U8FL Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| NTTFS5CS73NLTWG | onsemi |
Description: T6 60V NCH LL IN U8FL Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NIS4461MT4TXG | onsemi |
Description: IC ELECTRONIC FUSE 10% 10WDFNPackaging: Cut Tape (CT) Package / Case: 10-WFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 9V ~ 24V Current - Output: 4.2A Accuracy: ±10% Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 10-WDFN (3x3) |
на замовлення 2920 шт: термін постачання 21-31 дні (днів) |
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NSV1C301ET4G | onsemi |
Description: TRANS NPN 100V 3A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: DPAK Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2.1 W Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NSV1C301ET4G | onsemi |
Description: TRANS NPN 100V 3A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: DPAK Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2.1 W Qualification: AEC-Q101 |
на замовлення 5117 шт: термін постачання 21-31 дні (днів) |
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MUR260G | onsemi |
Description: DIODE STANDARD 600V 2A AXIALPackaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 10008 шт: термін постачання 21-31 дні (днів) |
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FQU2N60TU | onsemi |
Description: MOSFET N-CH 600V 2A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN1951D18X | onsemi |
Description: IC REG LINEAR 1.8V 1.5A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: TO-252 (DPAK) Voltage - Output (Min/Fixed): 1.8V Voltage Dropout (Max): 0.5V @ 1.5A Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDB024N04AL7 | onsemi |
Description: MOSFET N-CH 40V 100A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| SZMMSZ4703T1G |
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Виробник: onsemi
Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.1 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| KAI-1020-CBA-FD-BA |
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Виробник: onsemi
Description: IMAGE SENSOR CCD 1MP 64CLCC
Packaging: Bulk
Package / Case: 64-BCQFN
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 7.4µm x 7.4µm
Active Pixel Array: 1000H x 1000V
Supplier Device Package: 64-CLCC (18.29x18.29)
Frames per Second: 30.0
Description: IMAGE SENSOR CCD 1MP 64CLCC
Packaging: Bulk
Package / Case: 64-BCQFN
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 7.4µm x 7.4µm
Active Pixel Array: 1000H x 1000V
Supplier Device Package: 64-CLCC (18.29x18.29)
Frames per Second: 30.0
товару немає в наявності
В кошику
од. на суму грн.
| KAI-01050-FBA-FD-BA |
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Виробник: onsemi
Description: IMAGE SENSOR CCD 1MP 64CLCC
Packaging: Bulk
Package / Case: 64-BCQFN
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 64-CLCC (18.29x18.29)
Frames per Second: 120
Description: IMAGE SENSOR CCD 1MP 64CLCC
Packaging: Bulk
Package / Case: 64-BCQFN
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 64-CLCC (18.29x18.29)
Frames per Second: 120
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 24732.90 грн |
| KAI-1020-FBA-FD-BA |
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Виробник: onsemi
Description: INTERLINE CCD IMAGE SEN
Packaging: Tray
Package / Case: 64-VFQFN
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 7.4µm x 7.4µm
Active Pixel Array: 1000H x 1000V
Supplier Device Package: 64-CLCC (18.29x18.29)
Frames per Second: 30
Description: INTERLINE CCD IMAGE SEN
Packaging: Tray
Package / Case: 64-VFQFN
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 7.4µm x 7.4µm
Active Pixel Array: 1000H x 1000V
Supplier Device Package: 64-CLCC (18.29x18.29)
Frames per Second: 30
товару немає в наявності
В кошику
од. на суму грн.
| SZMMBZ5235BLT3G |
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Виробник: onsemi
Description: DIODE ZENER 6.8V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SZMMBZ5235BLT3G |
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Виробник: onsemi
Description: DIODE ZENER 6.8V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MBRM110LT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Packaging: Bulk
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 365 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 10 V
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Packaging: Bulk
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 365 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 10 V
на замовлення 18370 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2082+ | 10.65 грн |
| MBRM110LT1 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 365 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 10 V
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 365 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| NVBG160N120SC1 |
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Виробник: onsemi
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 461.93 грн |
| NVBG160N120SC1 |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1212 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 834.84 грн |
| 10+ | 537.43 грн |
| 100+ | 492.46 грн |
| NTBG160N120SC1 |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 331.08 грн |
| NTBG160N120SC1 |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
на замовлення 1620 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 734.30 грн |
| 10+ | 474.42 грн |
| 100+ | 351.82 грн |
| NTHL160N120SC1 |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
на замовлення 43847 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 598.32 грн |
| 30+ | 383.10 грн |
| 120+ | 351.08 грн |
| 510+ | 306.74 грн |
| NVHL160N120SC1 |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
на замовлення 11659 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 720.29 грн |
| 30+ | 442.43 грн |
| 120+ | 426.63 грн |
| NVH4L160N120SC1 |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 17.3A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 17.3A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1703 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 827.42 грн |
| 34+ | 498.27 грн |
| LC75700TS-MPB-E |
![]() |
Виробник: onsemi
Description: IC INTERFACE SPECIALIZED 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: CCB
Voltage - Supply: 2.7V ~ 5.5V
Applications: Key Scanning LSI
Supplier Device Package: 20-TSSOP
Description: IC INTERFACE SPECIALIZED 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: CCB
Voltage - Supply: 2.7V ~ 5.5V
Applications: Key Scanning LSI
Supplier Device Package: 20-TSSOP
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| MC100E241FN |
![]() |
Виробник: onsemi
Description: IC REGISTER SCAN 8BIT ECL 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Supplier Device Package: 28-PLCC (11.51x11.51)
Number of Bits per Element: 8
Description: IC REGISTER SCAN 8BIT ECL 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Supplier Device Package: 28-PLCC (11.51x11.51)
Number of Bits per Element: 8
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| MC100E241FNG |
![]() |
Виробник: onsemi
Description: IC REGISTER SCAN 8BIT ECL 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Supplier Device Package: 28-PLCC (11.51x11.51)
Number of Bits per Element: 8
Description: IC REGISTER SCAN 8BIT ECL 28PLCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Supplier Device Package: 28-PLCC (11.51x11.51)
Number of Bits per Element: 8
на замовлення 2016 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 439.82 грн |
| LC75822EHS-T-E |
Виробник: onsemi
Description: IC DRVR 53/104 SEGMENT 64QIPE
Packaging: Bulk
Package / Case: 64-BQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 53 Segment, 104 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6.5V
Supplier Device Package: 64-QIPE (14x14)
Description: IC DRVR 53/104 SEGMENT 64QIPE
Packaging: Bulk
Package / Case: 64-BQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 53 Segment, 104 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6.5V
Supplier Device Package: 64-QIPE (14x14)
на замовлення 2396 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 270+ | 87.21 грн |
| LC75834W-E |
Виробник: onsemi
Description: IC DRVR 136 SEGMENT 48SQFP
Packaging: Tray
Package / Case: 48-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 136 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 48-SQFP (7x7)
Current - Supply: 230 µA
Description: IC DRVR 136 SEGMENT 48SQFP
Packaging: Tray
Package / Case: 48-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 136 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 48-SQFP (7x7)
Current - Supply: 230 µA
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| LC75832WS-TBM-E |
![]() |
Виробник: onsemi
Description: IC DRVR 54/108 SEGMENT 64STQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 54 Segment, 108 Segment
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 64-SQFP (10x10)
Current - Supply: 250 µA
Description: IC DRVR 54/108 SEGMENT 64STQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 54 Segment, 108 Segment
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 64-SQFP (10x10)
Current - Supply: 250 µA
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| LC75833E-E |
![]() |
Виробник: onsemi
Description: IC DRVR 105 SEGMENT 48QFP
Packaging: Tray
Package / Case: 48-BQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 105 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 48-QFP
Current - Supply: 250 µA
Description: IC DRVR 105 SEGMENT 48QFP
Packaging: Tray
Package / Case: 48-BQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 105 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 48-QFP
Current - Supply: 250 µA
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| LC75836WH-E |
Виробник: onsemi
Description: IC DRVR 140 SEGMENT 48SQFP
Packaging: Tray
Package / Case: 48-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 140 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 6V
Supplier Device Package: 48-SQFP (7x7)
Current - Supply: 450 µA
Description: IC DRVR 140 SEGMENT 48SQFP
Packaging: Tray
Package / Case: 48-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 140 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 6V
Supplier Device Package: 48-SQFP (7x7)
Current - Supply: 450 µA
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| LC75822ED-E |
Виробник: onsemi
Description: IC DRVR 53/104 SEGMENT 64QIPE
Packaging: Tray
Package / Case: 64-BQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 53 Segment, 104 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6.5V
Supplier Device Package: 64-QIPE (14x14)
Description: IC DRVR 53/104 SEGMENT 64QIPE
Packaging: Tray
Package / Case: 64-BQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 53 Segment, 104 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6.5V
Supplier Device Package: 64-QIPE (14x14)
на замовлення 11601 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 222+ | 106.07 грн |
| LC75852W-E |
![]() |
Виробник: onsemi
Description: IC DRVR 90 SEGMENT 64SQFP
Packaging: Tray
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 90 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 6V
Supplier Device Package: 64-SQFP
Current - Supply: 1.4 mA
Description: IC DRVR 90 SEGMENT 64SQFP
Packaging: Tray
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 90 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 6V
Supplier Device Package: 64-SQFP
Current - Supply: 1.4 mA
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| LV88561JAGEVB |
![]() |
Виробник: onsemi
Description: EVAL BOARD LV88561
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: LV88561
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: No
Description: EVAL BOARD LV88561
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: LV88561
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: No
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| MBR3045STG |
![]() |
Виробник: onsemi
Description: DIODE ARRAY SCHOT 45V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE ARRAY SCHOT 45V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 183222 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 289+ | 73.05 грн |
| MBR3045STG |
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Виробник: onsemi
Description: DIODE ARRAY SCHOT 45V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE ARRAY SCHOT 45V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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| NCV7446MW0R2G |
![]() |
Виробник: onsemi
Description: IC TRANSCEIVER 2/2 14DFNW
Packaging: Tape & Reel (TR)
Package / Case: 14-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/2
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: 14-DFNW (4.5x3)
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER 2/2 14DFNW
Packaging: Tape & Reel (TR)
Package / Case: 14-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/2
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: 14-DFNW (4.5x3)
Grade: Automotive
Qualification: AEC-Q100
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| NCV7446MW0R2G |
![]() |
Виробник: onsemi
Description: IC TRANSCEIVER 2/2 14DFNW
Packaging: Cut Tape (CT)
Package / Case: 14-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/2
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: 14-DFNW (4.5x3)
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER 2/2 14DFNW
Packaging: Cut Tape (CT)
Package / Case: 14-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 2/2
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: 14-DFNW (4.5x3)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 176.36 грн |
| 10+ | 152.13 грн |
| 25+ | 143.52 грн |
| 100+ | 107.75 грн |
| 250+ | 94.27 грн |
| 500+ | 91.58 грн |
| 1000+ | 71.53 грн |
| 2500+ | 68.88 грн |
| NVXR22S90M2SPC |
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Виробник: onsemi
Description: SIC 900V 6D MOSFET V-SSDC SPC
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 900W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 510A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 400V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 510A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1800nC @ 18V
Vgs(th) (Max) @ Id: 4.3V @ 150mA
Supplier Device Package: SSDC39
Grade: Automotive
Qualification: AEC-Q101
Description: SIC 900V 6D MOSFET V-SSDC SPC
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 900W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 510A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 400V
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 510A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1800nC @ 18V
Vgs(th) (Max) @ Id: 4.3V @ 150mA
Supplier Device Package: SSDC39
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 184853.54 грн |
| FFPF04F150STU |
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Виробник: onsemi
Description: DIODE GEN PURP 1.5KV 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Description: DIODE GEN PURP 1.5KV 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
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| FFPF06F150STU |
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Виробник: onsemi
Description: DIODE GEN PURP 1.5KV 6A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Avalanche
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 7 µA @ 1500 V
Description: DIODE GEN PURP 1.5KV 6A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Avalanche
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 7 µA @ 1500 V
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| FFPF05U60DNTU |
![]() |
Виробник: onsemi
Description: DIODE ARR AVAL 600V 5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 600 V
Description: DIODE ARR AVAL 600V 5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 600 V
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| FFPF06U20DPTU |
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Виробник: onsemi
Description: DIODE ARR AVAL 200V 6A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 6 µA @ 200 V
Description: DIODE ARR AVAL 200V 6A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 6 µA @ 200 V
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| FFPF06U20DNTU |
![]() |
Виробник: onsemi
Description: DIODE ARR AVAL 200V 6A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 6 µA @ 200 V
Description: DIODE ARR AVAL 200V 6A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 6 µA @ 200 V
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| FFPF06U150STU |
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Виробник: onsemi
Description: DIODE AVAL 1500V 6A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Avalanche
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
Description: DIODE AVAL 1500V 6A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Avalanche
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
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| FFPF04U40DNTU |
![]() |
Виробник: onsemi
Description: DIODE ARR AVAL 400V 4A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE ARR AVAL 400V 4A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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| NCP152MX150280TCG |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 1.5V/2.8V 6-XDFN
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.5V, 2.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.5V @ 150mA, 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 1.5V/2.8V 6-XDFN
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.5V, 2.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.5V @ 150mA, 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1043+ | 22.05 грн |
| NCP154MX150280TAG |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 1.5V/2.8V 8-XDFN
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 8-XDFN (1.6x1.2)
Voltage - Output (Min/Fixed): 1.5V, 2.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.47V @ 300mA, 0.27V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 1.5V/2.8V 8-XDFN
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 8-XDFN (1.6x1.2)
Voltage - Output (Min/Fixed): 1.5V, 2.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.47V @ 300mA, 0.27V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2070+ | 10.14 грн |
| NSVMUN5233DW1T3G |
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Виробник: onsemi
Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.25 грн |
| NSVMUN5233DW1T3G |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.55 грн |
| 20+ | 16.59 грн |
| 100+ | 8.11 грн |
| 500+ | 6.35 грн |
| 1000+ | 4.41 грн |
| 2000+ | 3.82 грн |
| 5000+ | 3.49 грн |
| AS0148AT2C00XESM0-TPBR |
Виробник: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Tray
Output Type: Serial
Sensor Type: Host Command Interface Sensor
Grade: Automotive
Qualification: AEC-Q100
Description: 1MP 1/4 CIS SOC
Packaging: Tray
Output Type: Serial
Sensor Type: Host Command Interface Sensor
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3528.92 грн |
| 10+ | 3170.13 грн |
| 25+ | 3037.25 грн |
| 80+ | 2583.13 грн |
| 230+ | 2494.06 грн |
| CAT24AA02WI-GT3 |
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Виробник: onsemi
Description: IC EEPROM 2KBIT 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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| NLV74HC02ADTR2G |
Виробник: onsemi
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
на замовлення 1151 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1151+ | 18.26 грн |
| CS3361YDR14G |
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Виробник: onsemi
Description: IC DRIVER FET ALT REG 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 17V
Applications: Alternator, 3-Phase
Current - Supply: 10mA
Supplier Device Package: 14-SOIC
Grade: Automotive
Description: IC DRIVER FET ALT REG 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 17V
Applications: Alternator, 3-Phase
Current - Supply: 10mA
Supplier Device Package: 14-SOIC
Grade: Automotive
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 289.27 грн |
| 10+ | 250.14 грн |
| 25+ | 236.46 грн |
| 100+ | 182.48 грн |
| 250+ | 163.73 грн |
| 500+ | 157.81 грн |
| 1000+ | 129.03 грн |
| CS3351YDR14 |
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Виробник: onsemi
Description: IC DRVR DARL ALT REG VOLT 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 17V
Applications: Alternator, 3-Phase
Current - Supply: 12mA
Supplier Device Package: 14-SOIC
Grade: Automotive
Description: IC DRVR DARL ALT REG VOLT 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 17V
Applications: Alternator, 3-Phase
Current - Supply: 12mA
Supplier Device Package: 14-SOIC
Grade: Automotive
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| CS3351YD14 |
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Виробник: onsemi
Description: IC DRIVER DARL ALT REG 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 17V
Applications: Alternator, 3-Phase
Current - Supply: 12mA
Supplier Device Package: 14-SOIC
Grade: Automotive
Description: IC DRIVER DARL ALT REG 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 17V
Applications: Alternator, 3-Phase
Current - Supply: 12mA
Supplier Device Package: 14-SOIC
Grade: Automotive
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| CAT25320VI-G |
Виробник: onsemi
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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| CAT25C128XI-T2 |
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на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 11.30 грн |
| CAT25C128S |
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Виробник: onsemi
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 80 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 80 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
на замовлення 9509 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1480+ | 15.07 грн |
| NTTFS5CS73NLTWG |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 53.42 грн |
| NTTFS5CS73NLTWG |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.09 грн |
| 10+ | 109.04 грн |
| 25+ | 102.88 грн |
| 100+ | 77.24 грн |
| 250+ | 67.58 грн |
| 500+ | 65.65 грн |
| 1000+ | 51.28 грн |
| 2500+ | 49.38 грн |
| NIS4461MT4TXG |
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Виробник: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 24V
Current - Output: 4.2A
Accuracy: ±10%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFN (3x3)
Description: IC ELECTRONIC FUSE 10% 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 24V
Current - Output: 4.2A
Accuracy: ±10%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 10-WDFN (3x3)
на замовлення 2920 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 271.96 грн |
| 10+ | 167.53 грн |
| 25+ | 142.82 грн |
| 100+ | 107.77 грн |
| 250+ | 94.88 грн |
| 500+ | 86.95 грн |
| 1000+ | 78.99 грн |
| NSV1C301ET4G |
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Виробник: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
Qualification: AEC-Q101
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 22.12 грн |
| 5000+ | 19.67 грн |
| NSV1C301ET4G |
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Виробник: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
Qualification: AEC-Q101
Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
Qualification: AEC-Q101
на замовлення 5117 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.71 грн |
| 10+ | 51.58 грн |
| 100+ | 33.97 грн |
| 500+ | 24.76 грн |
| 1000+ | 22.47 грн |
| MUR260G |
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Виробник: onsemi
Description: DIODE STANDARD 600V 2A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 2A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 10008 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1964+ | 10.54 грн |
| FQU2N60TU |
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Виробник: onsemi
Description: MOSFET N-CH 600V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 600V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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| FAN1951D18X |
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Виробник: onsemi
Description: IC REG LINEAR 1.8V 1.5A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 1.8V
Voltage Dropout (Max): 0.5V @ 1.5A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 1.5A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 1.8V
Voltage Dropout (Max): 0.5V @ 1.5A
Protection Features: Over Current, Over Temperature
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| FDB024N04AL7 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 100A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
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