| Фото | Назва | Виробник | Інформація |
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NLAS5213BMUTAG | onsemi |
Description: IC SWITCH SPST-NOX2 1.3OHM 8UDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.3Ohm -3db Bandwidth: 496MHz Supplier Device Package: 8-UDFN (1.8x1.2) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Crosstalk: -97dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 20ns, 15ns Channel Capacitance (CS(off), CD(off)): 19pF Current - Leakage (IS(off)) (Max): 1µA Number of Circuits: 2 |
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NLAS5213AUSG | onsemi |
Description: IC SWITCH DPST-NO X 1 1.3OHM US8Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.3Ohm -3db Bandwidth: 496MHz Supplier Device Package: US8 Voltage - Supply, Single (V+): 1.65V ~ 4.5V Crosstalk: -97dB @ 1MHz Switch Circuit: DPST - NO Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 20ns, 15ns Channel Capacitance (CS(off), CD(off)): 19pF Current - Leakage (IS(off)) (Max): 1µA Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLAS5213BUSG | onsemi |
Description: IC SWITCH SPST-NO X 2 1.3OHM US8Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.3Ohm -3db Bandwidth: 496MHz Supplier Device Package: US8 Voltage - Supply, Single (V+): 1.65V ~ 4.5V Crosstalk: -97dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 20ns, 15ns Channel Capacitance (CS(off), CD(off)): 19pF Current - Leakage (IS(off)) (Max): 1µA Number of Circuits: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDB6690S | onsemi |
Description: MOSFET N-CH 30V 42A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 21A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1238 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N6380 | onsemi |
Description: TVS DIODE 36VWM 65.2VC AXIALPackaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 42.4V Voltage - Clamping (Max) @ Ipp: 65.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N6380RL4 | onsemi |
Description: TVS DIODE 36VWM 65.2VC AXIALPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 42.4V Voltage - Clamping (Max) @ Ipp: 65.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZD6V2MUT5G | onsemi |
Description: DIODE ZENER 6.2V 300MW 2-X3DFNTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
на замовлення 230000 шт: термін постачання 21-31 дні (днів) |
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NZD6V2MUT5G | onsemi |
Description: DIODE ZENER 6.2V 300MW 2-X3DFNTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
на замовлення 230000 шт: термін постачання 21-31 дні (днів) |
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SZNZ8F6V2MX2WT5G | onsemi |
Description: 6.2V ZENER STANDARD TOLERANCE INTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: 2-X2DFNW (1x0.6) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 3 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZNZ8F6V2MX2WT5G | onsemi |
Description: 6.2V ZENER STANDARD TOLERANCE INTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: 2-X2DFNW (1x0.6) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 3 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZ8F6V2MX2WT5G | onsemi |
Description: 6.2V ZENER STANDARD TOLERANCE INTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: 2-X2DFNW (1x0.6) Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZ8F6V2MX2WT5G | onsemi |
Description: 6.2V ZENER STANDARD TOLERANCE INTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: 2-X2DFNW (1x0.6) Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX74MTCX | onsemi |
Description: IC FF D-TYPE DUAL 1BIT 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Current - Quiescent (Iq): 10 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 7 pF Supplier Device Package: 14-TSSOP Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF Number of Bits per Element: 1 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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74LCX74MTCX | onsemi |
Description: IC FF D-TYPE DUAL 1BIT 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Current - Quiescent (Iq): 10 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 7 pF Supplier Device Package: 14-TSSOP Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF Number of Bits per Element: 1 |
на замовлення 16511 шт: термін постачання 21-31 дні (днів) |
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| LC87F6AC8ALU-EJ-H | onsemi |
Description: MICROCONTROLLER, 8-BIT, INTEGRATPackaging: Bulk Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 12MHz Program Memory Size: 128KB (128K x 8) RAM Size: 4K x 8 Operating Temperature: -20°C ~ 70°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Data Converters: A/D 15x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Connectivity: SIO Peripherals: PWM, WDT Supplier Device Package: 100-PQFP/QIP (20x14) Number of I/O: 32 DigiKey Programmable: Not Verified |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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FODM1007R2V | onsemi |
Description: OPTOISOLATOR LSOP4Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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NCV21671DM100R2G | onsemi |
Description: VOLTAGE OUTPUT CURRENT SHUNT MONPackaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Output Type: Single Ended, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 45µA Slew Rate: 0.3V/µs Current - Input Bias: 29 µA Voltage - Input Offset: 1 µV Supplier Device Package: 10-Micro Grade: Automotive Number of Circuits: 1 -3db Bandwidth: 20 kHz Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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NCV21671DM100R2G | onsemi |
Description: VOLTAGE OUTPUT CURRENT SHUNT MONPackaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Output Type: Single Ended, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 45µA Slew Rate: 0.3V/µs Current - Input Bias: 29 µA Voltage - Input Offset: 1 µV Supplier Device Package: 10-Micro Grade: Automotive Number of Circuits: 1 -3db Bandwidth: 20 kHz Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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H11L2SM | onsemi |
Description: OPTOISO 4.17KV OPN COLL 6-SMDPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 15V Voltage - Forward (Vf) (Typ): 1.2V Data Rate: 1MHz Input Type: DC Voltage - Isolation: 4170Vrms Current - DC Forward (If) (Max): 30mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SMD Rise / Fall Time (Typ): 100ns, 100ns Propagation Delay tpLH / tpHL (Max): 4µs, 4µs Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 397 шт: термін постачання 21-31 дні (днів) |
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NC7SZ57FHX | onsemi |
Description: IC MF CFG 1-CIR 3-IN 6MICROPAK2Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: Configurable Multiple Function Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Schmitt Trigger Input: No Supplier Device Package: 6-MicroPak2™ Number of Circuits: 1 |
на замовлення 145000 шт: термін постачання 21-31 дні (днів) |
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NC7SZ57FHX | onsemi |
Description: IC MF CFG 1-CIR 3-IN 6MICROPAK2Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: Configurable Multiple Function Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Schmitt Trigger Input: No Supplier Device Package: 6-MicroPak2™ Number of Circuits: 1 |
на замовлення 145000 шт: термін постачання 21-31 дні (днів) |
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NDF05N50ZG | onsemi |
Description: MOSFET N-CH 500V 5.5A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 25 V |
на замовлення 207595 шт: термін постачання 21-31 дні (днів) |
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NSS20201DMTTBG | onsemi |
Description: TRANS PNP 20V 2A 6WDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NSS20201DMTTBG | onsemi |
Description: TRANS PNP 20V 2A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NBRS2H100NT3G | onsemi |
Description: DIODE SCHOTTKY 100V 2A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 8 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NBRS2H100NT3G | onsemi |
Description: DIODE SCHOTTKY 100V 2A SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 8 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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NCIV9200R2 | onsemi |
Description: HIGH SPEED DUAL CHANNEL DIGITALPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: I2C, SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.5V ~ 5.5V Data Rate: 20Mbps Technology: Capacitive Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 2.7ns, 2.3ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 140ns, 140ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 60ns Grade: Automotive Number of Channels: 2 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCIV9200R2 | onsemi |
Description: HIGH SPEED DUAL CHANNEL DIGITALPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: I2C, SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.5V ~ 5.5V Data Rate: 20Mbps Technology: Capacitive Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 2.7ns, 2.3ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 140ns, 140ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 60ns Grade: Automotive Number of Channels: 2 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCIV9200 | onsemi |
Description: HIGH SPEED DUAL CHANNEL DIGITALPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: I2C, SPI Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.5V ~ 5.5V Data Rate: 20Mbps Technology: Capacitive Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 2.7ns, 2.3ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 140ns, 140ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 60ns Grade: Automotive Number of Channels: 2 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSVMUN5234T1G | onsemi |
Description: SS SC70 BR XSTR NPN 50VPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5234T1G | onsemi |
Description: SS SC70 BR XSTR NPN 50VPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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MC74HC02ADTR2G-Q | onsemi |
Description: QUAD 2-INPUT NOR GATEPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 342500 шт: термін постачання 21-31 дні (днів) |
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MC74HC02ADTR2G-Q | onsemi |
Description: QUAD 2-INPUT NOR GATEPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 344580 шт: термін постачання 21-31 дні (днів) |
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FDD068AN03L | onsemi |
Description: MOSFET N-CH 30V 17A/35A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74LCX04DT | onsemi |
Description: IC INVERTER 6CH 1-INP 14TSSOPPackaging: Tube Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
на замовлення 39223 шт: термін постачання 21-31 дні (днів) |
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MC74LCX04D | onsemi |
Description: IC INVERTER 6CH 1-INP 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
на замовлення 8290 шт: термін постачання 21-31 дні (днів) |
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MC74LCX04DTR2 | onsemi |
Description: IC INVERTER 6CH 1-INP 14TSSOPPackaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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NVD5C454NT4G | onsemi |
Description: MOSFET N-CH 40V 19A/82A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVD5C454NT4G | onsemi |
Description: MOSFET N-CH 40V 19A/82A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2368 шт: термін постачання 21-31 дні (днів) |
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NVD5C454NLT4G | onsemi |
Description: MOSFET N-CH 40V 20A/84A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 70µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NVD5C454NLT4G | onsemi |
Description: MOSFET N-CH 40V 20A/84A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 70µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NTTFS5C453NLTWG | onsemi |
Description: MOSFET N-CH 40V 23A/107A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Power Dissipation (Max): 3.3W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NTTFS5C453NLTWG | onsemi |
Description: MOSFET N-CH 40V 23A/107A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Power Dissipation (Max): 3.3W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 9845 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C450NAFT1G | onsemi |
Description: MOSFET N-CH 40V 24A/102A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 65µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 111000 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C450NAFT1G | onsemi |
Description: MOSFET N-CH 40V 24A/102A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 65µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 112306 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C454NLTAG | onsemi |
Description: MOSFET N-CHANNEL 40V 85A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVTFS5C454NLTAG | onsemi |
Description: MOSFET N-CHANNEL 40V 85A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1379 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C453NLTAG | onsemi |
Description: MOSFET N-CH 40V 107A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C453NLTAG | onsemi |
Description: MOSFET N-CH 40V 107A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C456NWFT1G | onsemi |
Description: MOSFET N-CH 40V 20A/80A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C456NWFT1G | onsemi |
Description: MOSFET N-CH 40V 20A/80A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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SZESD7371HT1G | onsemi |
Description: TVS DIODE 5.3VWM SOD323Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.43pF @ 1MHz Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: SOD-323 Unidirectional Channels: 1 Voltage - Breakdown (Min): 7V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 349281 шт: термін постачання 21-31 дні (днів) |
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ESD7410MXWT5G | onsemi |
Description: TVS DIODE 8VWM 19.4VC 2X2DFNWPackaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.35pF @ 1GHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 8V (Max) Supplier Device Package: 2-X2DFNW (1x0.6) Bidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 19.4V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZESD7371XV2T1G | onsemi |
Description: TVS DIODE 5.3VWM SOD523Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.43pF @ 1MHz Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: SOD-523 Unidirectional Channels: 1 Voltage - Breakdown (Min): 7V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZESD7371XV2T1G | onsemi |
Description: TVS DIODE 5.3VWM SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.43pF @ 1MHz Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: SOD-523 Unidirectional Channels: 1 Voltage - Breakdown (Min): 7V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NGTB30N120LWG | onsemi |
Description: IGBT TRENCH FS 1200V 60A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 136ns/360ns Switching Energy: 4.4mJ (on), 1mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 420 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 560 W |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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2SJ589LS | onsemi |
Description: POWER MOSFET MOTOR DRIVERSPackaging: Bulk |
на замовлення 27672 шт: термін постачання 21-31 дні (днів) |
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| NVLJWS013N03CLTAG | onsemi |
Description: T6 30V LL 2X2 WDFNW6Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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LV8068V-TLM-H | onsemi |
Description: IC BRIDGE DRIVER PWM SSOP-16 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJL21193 | onsemi |
Description: TRANS PNP 250V 16A TO-264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-264 Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 200 W |
на замовлення 7207 шт: термін постачання 21-31 дні (днів) |
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| NLAS5213BMUTAG |
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Виробник: onsemi
Description: IC SWITCH SPST-NOX2 1.3OHM 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.3Ohm
-3db Bandwidth: 496MHz
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -97dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 19pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
Description: IC SWITCH SPST-NOX2 1.3OHM 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.3Ohm
-3db Bandwidth: 496MHz
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -97dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 19pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
товару немає в наявності
В кошику
од. на суму грн.
| NLAS5213AUSG |
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Виробник: onsemi
Description: IC SWITCH DPST-NO X 1 1.3OHM US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.3Ohm
-3db Bandwidth: 496MHz
Supplier Device Package: US8
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -97dB @ 1MHz
Switch Circuit: DPST - NO
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 19pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 1
Description: IC SWITCH DPST-NO X 1 1.3OHM US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.3Ohm
-3db Bandwidth: 496MHz
Supplier Device Package: US8
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -97dB @ 1MHz
Switch Circuit: DPST - NO
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 19pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 1
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| NLAS5213BUSG |
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Виробник: onsemi
Description: IC SWITCH SPST-NO X 2 1.3OHM US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.3Ohm
-3db Bandwidth: 496MHz
Supplier Device Package: US8
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -97dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 19pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
Description: IC SWITCH SPST-NO X 2 1.3OHM US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.3Ohm
-3db Bandwidth: 496MHz
Supplier Device Package: US8
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -97dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 19pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
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| FDB6690S |
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Виробник: onsemi
Description: MOSFET N-CH 30V 42A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1238 pF @ 15 V
Description: MOSFET N-CH 30V 42A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1238 pF @ 15 V
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| 1N6380 |
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Виробник: onsemi
Description: TVS DIODE 36VWM 65.2VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 42.4V
Voltage - Clamping (Max) @ Ipp: 65.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 36VWM 65.2VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 42.4V
Voltage - Clamping (Max) @ Ipp: 65.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| 1N6380RL4 |
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Виробник: onsemi
Description: TVS DIODE 36VWM 65.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 42.4V
Voltage - Clamping (Max) @ Ipp: 65.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 36VWM 65.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 42.4V
Voltage - Clamping (Max) @ Ipp: 65.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| NZD6V2MUT5G |
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Виробник: onsemi
Description: DIODE ZENER 6.2V 300MW 2-X3DFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: DIODE ZENER 6.2V 300MW 2-X3DFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
на замовлення 230000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.11 грн |
| 30000+ | 3.89 грн |
| 50000+ | 3.22 грн |
| NZD6V2MUT5G |
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Виробник: onsemi
Description: DIODE ZENER 6.2V 300MW 2-X3DFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: DIODE ZENER 6.2V 300MW 2-X3DFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
на замовлення 230000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.70 грн |
| 23+ | 14.84 грн |
| 100+ | 9.31 грн |
| 500+ | 6.46 грн |
| 1000+ | 5.73 грн |
| 2000+ | 5.10 грн |
| 5000+ | 4.36 грн |
| SZNZ8F6V2MX2WT5G |
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Виробник: onsemi
Description: 6.2V ZENER STANDARD TOLERANCE IN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Qualification: AEC-Q101
Description: 6.2V ZENER STANDARD TOLERANCE IN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Qualification: AEC-Q101
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| SZNZ8F6V2MX2WT5G |
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Виробник: onsemi
Description: 6.2V ZENER STANDARD TOLERANCE IN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Qualification: AEC-Q101
Description: 6.2V ZENER STANDARD TOLERANCE IN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Qualification: AEC-Q101
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| NZ8F6V2MX2WT5G |
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Виробник: onsemi
Description: 6.2V ZENER STANDARD TOLERANCE IN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: 6.2V ZENER STANDARD TOLERANCE IN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
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| NZ8F6V2MX2WT5G |
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Виробник: onsemi
Description: 6.2V ZENER STANDARD TOLERANCE IN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: 6.2V ZENER STANDARD TOLERANCE IN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
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| 74LCX74MTCX |
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Виробник: onsemi
Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Number of Bits per Element: 1
Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Number of Bits per Element: 1
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 18.86 грн |
| 5000+ | 16.87 грн |
| 7500+ | 16.22 грн |
| 12500+ | 14.54 грн |
| 74LCX74MTCX |
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Виробник: onsemi
Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Number of Bits per Element: 1
Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Number of Bits per Element: 1
на замовлення 16511 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 79.20 грн |
| 10+ | 44.86 грн |
| 25+ | 37.23 грн |
| 100+ | 27.01 грн |
| 250+ | 23.22 грн |
| 500+ | 20.93 грн |
| 1000+ | 18.73 грн |
| LC87F6AC8ALU-EJ-H |
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Виробник: onsemi
Description: MICROCONTROLLER, 8-BIT, INTEGRAT
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -20°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Data Converters: A/D 15x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: SIO
Peripherals: PWM, WDT
Supplier Device Package: 100-PQFP/QIP (20x14)
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: MICROCONTROLLER, 8-BIT, INTEGRAT
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -20°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Data Converters: A/D 15x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: SIO
Peripherals: PWM, WDT
Supplier Device Package: 100-PQFP/QIP (20x14)
Number of I/O: 32
DigiKey Programmable: Not Verified
на замовлення 250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 57+ | 415.24 грн |
| FODM1007R2V |
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Виробник: onsemi
Description: OPTOISOLATOR LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 66.42 грн |
| 10+ | 38.71 грн |
| 100+ | 25.70 грн |
| 500+ | 19.35 грн |
| 1000+ | 17.88 грн |
| NCV21671DM100R2G |
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Виробник: onsemi
Description: VOLTAGE OUTPUT CURRENT SHUNT MON
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Single Ended, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 45µA
Slew Rate: 0.3V/µs
Current - Input Bias: 29 µA
Voltage - Input Offset: 1 µV
Supplier Device Package: 10-Micro
Grade: Automotive
Number of Circuits: 1
-3db Bandwidth: 20 kHz
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: VOLTAGE OUTPUT CURRENT SHUNT MON
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Single Ended, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 45µA
Slew Rate: 0.3V/µs
Current - Input Bias: 29 µA
Voltage - Input Offset: 1 µV
Supplier Device Package: 10-Micro
Grade: Automotive
Number of Circuits: 1
-3db Bandwidth: 20 kHz
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 57.31 грн |
| NCV21671DM100R2G |
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Виробник: onsemi
Description: VOLTAGE OUTPUT CURRENT SHUNT MON
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Single Ended, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 45µA
Slew Rate: 0.3V/µs
Current - Input Bias: 29 µA
Voltage - Input Offset: 1 µV
Supplier Device Package: 10-Micro
Grade: Automotive
Number of Circuits: 1
-3db Bandwidth: 20 kHz
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: VOLTAGE OUTPUT CURRENT SHUNT MON
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Single Ended, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 45µA
Slew Rate: 0.3V/µs
Current - Input Bias: 29 µA
Voltage - Input Offset: 1 µV
Supplier Device Package: 10-Micro
Grade: Automotive
Number of Circuits: 1
-3db Bandwidth: 20 kHz
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 210.34 грн |
| 10+ | 127.52 грн |
| 25+ | 107.85 грн |
| 100+ | 80.41 грн |
| 250+ | 70.19 грн |
| 500+ | 63.90 грн |
| 1000+ | 57.67 грн |
| H11L2SM |
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Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 4.17KV OPN COLL 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 397 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.09 грн |
| 10+ | 50.27 грн |
| 100+ | 37.16 грн |
| NC7SZ57FHX |
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Виробник: onsemi
Description: IC MF CFG 1-CIR 3-IN 6MICROPAK2
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: No
Supplier Device Package: 6-MicroPak2™
Number of Circuits: 1
Description: IC MF CFG 1-CIR 3-IN 6MICROPAK2
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: No
Supplier Device Package: 6-MicroPak2™
Number of Circuits: 1
на замовлення 145000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 7.67 грн |
| 10000+ | 6.72 грн |
| 15000+ | 6.38 грн |
| 25000+ | 5.63 грн |
| 35000+ | 5.42 грн |
| 50000+ | 5.21 грн |
| 125000+ | 4.97 грн |
| NC7SZ57FHX |
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Виробник: onsemi
Description: IC MF CFG 1-CIR 3-IN 6MICROPAK2
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: No
Supplier Device Package: 6-MicroPak2™
Number of Circuits: 1
Description: IC MF CFG 1-CIR 3-IN 6MICROPAK2
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: No
Supplier Device Package: 6-MicroPak2™
Number of Circuits: 1
на замовлення 145000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.88 грн |
| NDF05N50ZG |
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Виробник: onsemi
Description: MOSFET N-CH 500V 5.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 25 V
Description: MOSFET N-CH 500V 5.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 25 V
на замовлення 207595 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 683+ | 32.94 грн |
| NSS20201DMTTBG |
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Виробник: onsemi
Description: TRANS PNP 20V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS PNP 20V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 6-WDFN (2x2)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 18.67 грн |
| 6000+ | 17.04 грн |
| 9000+ | 15.77 грн |
| NSS20201DMTTBG |
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Виробник: onsemi
Description: TRANS PNP 20V 2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS PNP 20V 2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 6-WDFN (2x2)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.39 грн |
| 10+ | 41.00 грн |
| 100+ | 28.39 грн |
| 500+ | 22.26 грн |
| 1000+ | 18.95 грн |
| NBRS2H100NT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 100V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 100 V
Qualification: AEC-Q101
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од. на суму грн.
| NBRS2H100NT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 100V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 8 µA @ 100 V
Qualification: AEC-Q101
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.06 грн |
| 14+ | 24.11 грн |
| 100+ | 19.05 грн |
| 500+ | 13.57 грн |
| 1000+ | 12.18 грн |
| NCIV9200R2 |
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Виробник: onsemi
Description: HIGH SPEED DUAL CHANNEL DIGITAL
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: I2C, SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Data Rate: 20Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 2.7ns, 2.3ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 140ns, 140ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Number of Channels: 2
Qualification: AEC-Q100
Description: HIGH SPEED DUAL CHANNEL DIGITAL
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: I2C, SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Data Rate: 20Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 2.7ns, 2.3ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 140ns, 140ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Number of Channels: 2
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| NCIV9200R2 |
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Виробник: onsemi
Description: HIGH SPEED DUAL CHANNEL DIGITAL
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: I2C, SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Data Rate: 20Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 2.7ns, 2.3ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 140ns, 140ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Number of Channels: 2
Qualification: AEC-Q100
Description: HIGH SPEED DUAL CHANNEL DIGITAL
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: I2C, SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Data Rate: 20Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 2.7ns, 2.3ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 140ns, 140ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Number of Channels: 2
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| NCIV9200 |
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Виробник: onsemi
Description: HIGH SPEED DUAL CHANNEL DIGITAL
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: I2C, SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Data Rate: 20Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 2.7ns, 2.3ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 140ns, 140ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Number of Channels: 2
Qualification: AEC-Q100
Description: HIGH SPEED DUAL CHANNEL DIGITAL
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: I2C, SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Data Rate: 20Mbps
Technology: Capacitive Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 2.7ns, 2.3ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 140ns, 140ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 60ns
Grade: Automotive
Number of Channels: 2
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| NSVMUN5234T1G |
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Виробник: onsemi
Description: SS SC70 BR XSTR NPN 50V
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: SS SC70 BR XSTR NPN 50V
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.50 грн |
| 6000+ | 2.15 грн |
| 9000+ | 2.01 грн |
| 15000+ | 1.75 грн |
| 21000+ | 1.67 грн |
| 30000+ | 1.59 грн |
| 75000+ | 1.43 грн |
| NSVMUN5234T1G |
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Виробник: onsemi
Description: SS SC70 BR XSTR NPN 50V
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: SS SC70 BR XSTR NPN 50V
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.33 грн |
| 36+ | 9.18 грн |
| 100+ | 5.70 грн |
| 500+ | 3.89 грн |
| 1000+ | 3.42 грн |
| MC74HC02ADTR2G-Q |
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Виробник: onsemi
Description: QUAD 2-INPUT NOR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: QUAD 2-INPUT NOR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 342500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 13.99 грн |
| 5000+ | 13.09 грн |
| 7500+ | 12.89 грн |
| 12500+ | 11.90 грн |
| 17500+ | 11.78 грн |
| 25000+ | 11.67 грн |
| MC74HC02ADTR2G-Q |
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Виробник: onsemi
Description: QUAD 2-INPUT NOR GATE
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: QUAD 2-INPUT NOR GATE
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 344580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.36 грн |
| 16+ | 21.57 грн |
| 25+ | 19.25 грн |
| 100+ | 15.67 грн |
| 250+ | 14.51 грн |
| 500+ | 13.82 грн |
| 1000+ | 13.06 грн |
| FDD068AN03L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 17A/35A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
Description: MOSFET N-CH 30V 17A/35A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| MC74LCX04DT |
![]() |
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
на замовлення 39223 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2959+ | 7.83 грн |
| MC74LCX04D |
![]() |
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
на замовлення 8290 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2959+ | 7.83 грн |
| MC74LCX04DTR2 |
![]() |
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2959+ | 7.83 грн |
| NVD5C454NT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 19A/82A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 19A/82A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVD5C454NT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 19A/82A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 19A/82A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2368 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 203.53 грн |
| 10+ | 119.56 грн |
| 100+ | 86.41 грн |
| 500+ | 68.83 грн |
| 1000+ | 63.97 грн |
| NVD5C454NLT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 20A/84A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 70µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 20A/84A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 70µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 66.45 грн |
| NVD5C454NLT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 20A/84A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 70µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 20A/84A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 70µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.33 грн |
| 10+ | 117.84 грн |
| 100+ | 93.81 грн |
| 500+ | 74.50 грн |
| 1000+ | 63.21 грн |
| NTTFS5C453NLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 23A/107A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 40V 23A/107A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 30.18 грн |
| NTTFS5C453NLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 23A/107A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 40V 23A/107A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 9845 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.50 грн |
| 10+ | 67.00 грн |
| 25+ | 63.57 грн |
| 100+ | 45.81 грн |
| 250+ | 40.49 грн |
| 500+ | 38.36 грн |
| 1000+ | 29.34 грн |
| 2500+ | 27.88 грн |
| NVMFS5C450NAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 24A/102A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 24A/102A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 37.43 грн |
| 3000+ | 35.53 грн |
| 4500+ | 35.38 грн |
| NVMFS5C450NAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 24A/102A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 24A/102A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 112306 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.79 грн |
| 10+ | 75.04 грн |
| 100+ | 52.56 грн |
| 500+ | 41.66 грн |
| NVTFS5C454NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CHANNEL 40V 85A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 40V 85A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS5C454NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CHANNEL 40V 85A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 40V 85A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1379 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.19 грн |
| 10+ | 82.01 грн |
| 100+ | 57.04 грн |
| 500+ | 47.28 грн |
| NVTFS5C453NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 107A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 107A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 56.39 грн |
| NVTFS5C453NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 107A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 107A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.22 грн |
| 10+ | 95.04 грн |
| 100+ | 75.63 грн |
| 500+ | 60.06 грн |
| NVMFS5C456NWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 20A/80A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 20A/80A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 73.96 грн |
| 3000+ | 67.66 грн |
| 7500+ | 65.12 грн |
| 10500+ | 59.08 грн |
| NVMFS5C456NWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 20A/80A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 20A/80A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.84 грн |
| 10+ | 124.65 грн |
| 100+ | 99.19 грн |
| 500+ | 78.77 грн |
| SZESD7371HT1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 5.3VWM SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.43pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.3VWM SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.43pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 349281 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2408+ | 8.98 грн |
| ESD7410MXWT5G |
![]() |
Виробник: onsemi
Description: TVS DIODE 8VWM 19.4VC 2X2DFNW
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.35pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: 2-X2DFNW (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 19.4V
Power Line Protection: No
Description: TVS DIODE 8VWM 19.4VC 2X2DFNW
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.35pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: 2-X2DFNW (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 19.4V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| SZESD7371XV2T1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 5.3VWM SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.43pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.3VWM SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.43pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SZESD7371XV2T1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 5.3VWM SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.43pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.3VWM SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.43pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NGTB30N120LWG |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 1200V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 136ns/360ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 420 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 560 W
Description: IGBT TRENCH FS 1200V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 136ns/360ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 420 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 560 W
на замовлення 90 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 79+ | 279.50 грн |
| 2SJ589LS |
![]() |
на замовлення 27672 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 226+ | 97.16 грн |
| NVLJWS013N03CLTAG |
![]() |
Виробник: onsemi
Description: T6 30V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Qualification: AEC-Q101
Description: T6 30V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 56.21 грн |
| 10+ | 48.14 грн |
| 25+ | 45.20 грн |
| 100+ | 32.17 грн |
| 250+ | 27.38 грн |
| 500+ | 26.01 грн |
| 1000+ | 19.52 грн |
| MJL21193 | ![]() |
![]() |
Виробник: onsemi
Description: TRANS PNP 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
Description: TRANS PNP 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
на замовлення 7207 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 102+ | 215.37 грн |





























