| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MC100EP140DR2G | onsemi |
Description: IC FREQUENCY DETECTOR 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: ECL Frequency - Max: 2GHz Type: Phase Frequency Detector Input: NECL, PECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:2 Differential - Input:Output: No/Yes Supplier Device Package: 8-SOIC PLL: No Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC100EP40DTR2G | onsemi |
Description: IC FREQUENCY DETECTOR 20TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: ECL Frequency - Max: 2GHz Type: Phase Frequency Detector Input: NECL, PECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Ratio - Input:Output: 1:2 Differential - Input:Output: Yes/Yes Supplier Device Package: 20-TSSOP PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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MC100EP40DTR2G | onsemi |
Description: IC FREQUENCY DETECTOR 20TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: ECL Frequency - Max: 2GHz Type: Phase Frequency Detector Input: NECL, PECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Ratio - Input:Output: 1:2 Differential - Input:Output: Yes/Yes Supplier Device Package: 20-TSSOP PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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NTTFS008N04CTAG | onsemi |
Description: MOSFET N-CH 40V 14A/48A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
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NTTFS008N04CTAG | onsemi |
Description: MOSFET N-CH 40V 14A/48A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
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NVTFS008N04CTAG | onsemi |
Description: MOSFET N-CH 40V 14A/48A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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NVTFS008N04CTAG | onsemi |
Description: MOSFET N-CH 40V 14A/48A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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NVTFWS008N04CTAG | onsemi |
Description: MOSFET N-CH 40V 14A/48A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVTFWS008N04CTAG | onsemi |
Description: MOSFET N-CH 40V 14A/48A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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SMUN5112DW1T1G | onsemi |
Description: TRANS 2PNP PREBIAS 0.25W SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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SMUN5112DW1T1G | onsemi |
Description: TRANS 2PNP PREBIAS 0.25W SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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FDPF7N60NZT | onsemi |
Description: MOSFET N-CH 600V 6.5A TO220FPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V |
на замовлення 16758 шт: термін постачання 21-31 дні (днів) |
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NLAS324USG | onsemi |
Description: IC SWITCH SPST-NC X 2 25OHM US8Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 25Ohm -3db Bandwidth: 220MHz Supplier Device Package: US8 Voltage - Supply, Single (V+): 2V ~ 5.5V Charge Injection: 3pC Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 9ns, 10ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 2 |
на замовлення 2908 шт: термін постачання 21-31 дні (днів) |
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BC848BWT1 | onsemi |
Description: TRANS NPN 30V 0.1A SC70-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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BC848BLT1 | onsemi |
Description: TRANS NPN 30V 100MA SOT23Packaging: Bulk |
на замовлення 219999 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ15VDLT3G | onsemi |
Description: TVS DIODE 12.8VWM 21.2VC SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 1.9A Voltage - Reverse Standoff (Typ): 12.8V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 14.3V Voltage - Clamping (Max) @ Ipp: 21.2V Power - Peak Pulse: 40W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ15VDLT3G | onsemi |
Description: TVS DIODE 12.8VWM 21.2VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 1.9A Voltage - Reverse Standoff (Typ): 12.8V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 14.3V Voltage - Clamping (Max) @ Ipp: 21.2V Power - Peak Pulse: 40W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MC74LVX574MEL | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20SOEIAJPackaging: Bulk Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 4mA, 4mA Trigger Type: Positive Edge Clock Frequency: 75 MHz Input Capacitance: 4 pF Supplier Device Package: SOEIAJ-20 Max Propagation Delay @ V, Max CL: 16.7ns @ 3.3V, 50pF Number of Bits per Element: 8 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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MC74LVX373M | onsemi |
Description: IC DTYPE TRANSP SGL 8:8 20SOEIAJPackaging: Tube Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 4mA, 4mA Delay Time - Propagation: 5.8ns Supplier Device Package: SOEIAJ-20 |
на замовлення 10880 шт: термін постачання 21-31 дні (днів) |
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MC74VHCT374AMEL | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20SOEIAJPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 130 MHz Input Capacitance: 4 pF Supplier Device Package: SOEIAJ-20 Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF Number of Bits per Element: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74LCX06MG | onsemi |
Description: IC INVERTER 6CH 1-INP SOEIAJ-14Packaging: Tube Features: Open Drain Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: -, 24mA Number of Inputs: 1 Supplier Device Package: SOEIAJ-14 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 3.7ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
на замовлення 25150 шт: термін постачання 21-31 дні (днів) |
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MC74LCX04MELG | onsemi |
Description: IC INVERTER 6CH 1-INP SOEIAJ-14Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: SOEIAJ-14 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
на замовлення 48210 шт: термін постачання 21-31 дні (днів) |
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MC74LCX32MELG | onsemi |
Description: IC GATE OR 4CH 2-INP SOEIAJ-14Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: SOEIAJ-14 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 10 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1850FCCT1G | onsemi |
Description: IC BATT CHG LI-ION 1CELL 25WLCSPPackaging: Tape & Reel (TR) Package / Case: 25-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Interface: I2C, USB Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: 25-WLCSP (2.06x2.06) Fault Protection: Over Voltage Voltage - Supply (Max): 7.3V Battery Pack Voltage: 4.5V (Max) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P3PS850BHG-08CR | onsemi |
Description: IC CLK GEN EMI MODULATOR 8-WDFN Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NE592N14G | onsemi |
Description: IC AMP GENERAL PURPOSE 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Output Type: Differential Mounting Type: Through Hole Applications: Standard (General Purpose) Voltage - Supply, Single/Dual (±): ±3V ~ 8V Supplier Device Package: 14-PDIP Number of Circuits: 1 Current - Supply: 18 mA Current - Output / Channel: 10 mA |
на замовлення 2694 шт: термін постачання 21-31 дні (днів) |
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LA1787M-MPB-E | onsemi |
Description: RF RX AM/FM 520KHZ-1.71MHZ 64QFPPackaging: Tray Package / Case: 64-BQFP Mounting Type: Surface Mount Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz Modulation or Protocol: AM, FM Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 8V Applications: Audio Antenna Connector: PCB, Surface Mount Supplier Device Package: 64-QFP (14x14) Grade: Automotive |
на замовлення 9097 шт: термін постачання 21-31 дні (днів) |
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LA1787M-MPB-E | onsemi |
Description: RF RX AM/FM 520KHZ-1.71MHZ 64QFPPackaging: Tray Package / Case: 64-BQFP Mounting Type: Surface Mount Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz Modulation or Protocol: AM, FM Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 8V Applications: Audio Antenna Connector: PCB, Surface Mount Supplier Device Package: 64-QFP (14x14) Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CPH6021-TL-H | onsemi |
Description: RF TRANS NPN 12V 10GHZ 6CPHPackaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 14dB @ 1GHz Power - Max: 700mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Supplier Device Package: 6-CPH |
на замовлення 107980 шт: термін постачання 21-31 дні (днів) |
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NB4N121KMNGEVB | onsemi |
Description: BOARD EVAL NB4N121 FANOUT BUFFERPackaging: Box Function: Clock Distribution Type: Timing Utilized IC / Part: NB4N121K Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVLJWS070N06CLTAG | onsemi |
Description: T6 60V LL 2X2 WDFNW6Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V Power Dissipation (Max): 2.4W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2V @ 6µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 127673 шт: термін постачання 21-31 дні (днів) |
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| SBS806M-TL-E | onsemi |
Description: DIODE Packaging: Bulk |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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NCP1010AP100 | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 67% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.5V ~ 10V Supplier Device Package: 7-PDIP Fault Protection: Over Load, Over Temperature, Over Voltage Power (Watts): 19 W |
на замовлення 2964 шт: термін постачання 21-31 дні (днів) |
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HGTG30N60C3D | onsemi |
Description: IGBT 600V 63A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247-3 Switching Energy: 1.05mJ (on), 2.5mJ (off) Gate Charge: 162 nC Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 252 A Power - Max: 208 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LA4450L-E | onsemi |
Description: IC AMP CLASS AB STEREO 20W 14SIP Packaging: Tube Features: Short-Circuit and Thermal Protection, Standby Package / Case: 14-SIP Output Type: 2-Channel (Stereo) Mounting Type: Through Hole Type: Class AB Operating Temperature: -35°C ~ 80°C (TA) Voltage - Supply: 10V ~ 30V Max Output Power x Channels @ Load: 20W x 1 @ 4Ohm Supplier Device Package: 14-SIP |
на замовлення 19360 шт: термін постачання 21-31 дні (днів) |
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FDS8882 | onsemi |
Description: MOSFET N-CH 30V 9A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMF12CT1 | onsemi |
Description: TVS ARRAY 5LINE 100W 12V SC88Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF644B-FP001 | onsemi |
Description: MOSFET N-CH 250V 14A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD5680 | onsemi |
Description: MOSFET N-CH 60V 8.5A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FDD5680 | onsemi |
Description: MOSFET N-CH 60V 8.5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V |
на замовлення 4627 шт: термін постачання 21-31 дні (днів) |
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| KAI-16050-FXA-JD-B2 | onsemi |
Description: IMAGE SENSOR CCD 16MP 71CPGAPackaging: Bulk Package / Case: 71-BCPGA Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.5µm x 5.5µm Active Pixel Array: 4896H x 3264V Supplier Device Package: 72-CPGA (47.24x45.34) Frames per Second: 2.0 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C68LT1G | onsemi |
Description: DIODE ZENER 68V 250MW SOT23-3Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 240 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V Qualification: AEC-Q101 |
на замовлення 69000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C68LT1G | onsemi |
Description: DIODE ZENER 68V 250MW SOT23-3Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 240 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V Qualification: AEC-Q101 |
на замовлення 71985 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C62ET1G | onsemi |
Description: DIODE ZENER 62V 225MW SOT23-3Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 215 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V Qualification: AEC-Q101 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C62ET1G | onsemi |
Description: DIODE ZENER 62V 225MW SOT23-3Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 215 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V Qualification: AEC-Q101 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C68ET1G | onsemi |
Description: DIODE ZENER 68V 225MW SOT23-3Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 240 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V Qualification: AEC-Q101 |
на замовлення 111000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C68ET1G | onsemi |
Description: DIODE ZENER 68V 225MW SOT23-3Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 240 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V Qualification: AEC-Q101 |
на замовлення 113994 шт: термін постачання 21-31 дні (днів) |
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FGA5065ADF | onsemi |
Description: IGBT TRENCH/FS 650V 100A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31.8 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20.8ns/62.4ns Switching Energy: 1.35mJ (on), 309µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 72.2 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 268 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1SMC40AT3 | onsemi |
Description: TVS 1500W 40V UNIDIRECT SMCPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NV25640DTVLT3G | onsemi |
Description: IC EEPROM 64KBIT SPI 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Access Time: 20 ns Memory Organization: 8K x 8 Qualification: AEC-Q100 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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NV25640DTVLT3G | onsemi |
Description: IC EEPROM 64KBIT SPI 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Access Time: 20 ns Memory Organization: 8K x 8 Qualification: AEC-Q100 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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NLAS8252MUTAG | onsemi |
Description: IC SWITCH DP3T 12UQFNPackaging: Tape & Reel (TR) Features: USB 2.0 Package / Case: 12-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: UART, USB On-State Resistance (Max): 4.5Ohm -3db Bandwidth: 200MHz Supplier Device Package: 12-UQFN (1.7x2) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Switch Circuit: DP3T Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDI038AN06A0 | onsemi |
Description: MOSFET N-CH 60V 17A/80A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KA431AZBU | onsemi |
Description: IC VREF SHUNT ADJ 1% TO92-3Packaging: Bulk Tolerance: ±1% Package / Case: TO-226-3, TO-92-3 (TO-226AA) Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.495V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 6995 шт: термін постачання 21-31 дні (днів) |
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NVBG089N65S3F | onsemi |
Description: SF3 FRFET AUTO, 89MOHM, D2PAK 7LPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 18.5A, 10V Power Dissipation (Max): 291W (Tc) Vgs(th) (Max) @ Id: 5V @ 970µA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3598 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 2334 шт: термін постачання 21-31 дні (днів) |
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SBRB2545CTG | onsemi |
Description: DIODE ARRAY SCHOTT 45V 15A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
на замовлення 2100 шт: термін постачання 21-31 дні (днів) |
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BZX84C39LT3G | onsemi |
Description: DIODE ZENER 39V 250MW SOT23-3Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C39LT1 | onsemi |
Description: DIODE ZENER 39V 225MW SOT-23Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C20LT3 | onsemi |
Description: DIODE ZENER 20V 225MW SOT23-3Packaging: Bulk Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 14 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZX84C20 | onsemi |
Description: ZENER SOT23 20V 0.3W 5%Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 14 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MC100EP140DR2G |
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Виробник: onsemi
Description: IC FREQUENCY DETECTOR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 2GHz
Type: Phase Frequency Detector
Input: NECL, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/Yes
Supplier Device Package: 8-SOIC
PLL: No
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FREQUENCY DETECTOR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 2GHz
Type: Phase Frequency Detector
Input: NECL, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/Yes
Supplier Device Package: 8-SOIC
PLL: No
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| MC100EP40DTR2G |
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Виробник: onsemi
Description: IC FREQUENCY DETECTOR 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 2GHz
Type: Phase Frequency Detector
Input: NECL, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FREQUENCY DETECTOR 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 2GHz
Type: Phase Frequency Detector
Input: NECL, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 1050.84 грн |
| MC100EP40DTR2G |
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Виробник: onsemi
Description: IC FREQUENCY DETECTOR 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 2GHz
Type: Phase Frequency Detector
Input: NECL, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FREQUENCY DETECTOR 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 2GHz
Type: Phase Frequency Detector
Input: NECL, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1610.05 грн |
| NTTFS008N04CTAG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 24.40 грн |
| 3000+ | 20.93 грн |
| 7500+ | 19.82 грн |
| 10500+ | 17.23 грн |
| NTTFS008N04CTAG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.00 грн |
| 10+ | 47.73 грн |
| 100+ | 33.04 грн |
| 500+ | 25.91 грн |
| NVTFS008N04CTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Qualification: AEC-Q101
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 42.67 грн |
| 3000+ | 38.68 грн |
| 7500+ | 36.84 грн |
| 10500+ | 32.97 грн |
| NVTFS008N04CTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Qualification: AEC-Q101
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 96.65 грн |
| 10+ | 76.45 грн |
| 100+ | 59.51 грн |
| 500+ | 47.33 грн |
| NVTFWS008N04CTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 48.80 грн |
| NVTFWS008N04CTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 110.70 грн |
| 10+ | 87.50 грн |
| 100+ | 68.06 грн |
| 500+ | 54.14 грн |
| SMUN5112DW1T1G |
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Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.24 грн |
| 6000+ | 3.67 грн |
| 9000+ | 3.45 грн |
| 15000+ | 3.02 грн |
| 21000+ | 2.88 грн |
| 30000+ | 2.75 грн |
| 75000+ | 2.43 грн |
| SMUN5112DW1T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP PREBIAS 0.25W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.65 грн |
| FDPF7N60NZT |
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Виробник: onsemi
Description: MOSFET N-CH 600V 6.5A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Description: MOSFET N-CH 600V 6.5A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
на замовлення 16758 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 294+ | 72.28 грн |
| NLAS324USG |
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Виробник: onsemi
Description: IC SWITCH SPST-NC X 2 25OHM US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 220MHz
Supplier Device Package: US8
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 9ns, 10ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Description: IC SWITCH SPST-NC X 2 25OHM US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 220MHz
Supplier Device Package: US8
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 9ns, 10ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
на замовлення 2908 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 81.78 грн |
| 10+ | 56.64 грн |
| 25+ | 51.20 грн |
| 100+ | 42.45 грн |
| 250+ | 39.78 грн |
| 500+ | 38.17 грн |
| 1000+ | 36.24 грн |
| BC848BWT1 |
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Виробник: onsemi
Description: TRANS NPN 30V 0.1A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Description: TRANS NPN 30V 0.1A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9458+ | 2.11 грн |
| BC848BLT1 |
![]() |
на замовлення 219999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7869+ | 2.83 грн |
| SZMMBZ15VDLT3G |
![]() |
Виробник: onsemi
Description: TVS DIODE 12.8VWM 21.2VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12.8VWM 21.2VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.78 грн |
| SZMMBZ15VDLT3G |
![]() |
Виробник: onsemi
Description: TVS DIODE 12.8VWM 21.2VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12.8VWM 21.2VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.39 грн |
| 39+ | 8.19 грн |
| 100+ | 5.47 грн |
| 500+ | 3.91 грн |
| 1000+ | 3.50 грн |
| 2000+ | 3.15 грн |
| 5000+ | 2.71 грн |
| MC74LVX574MEL |
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Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20SOEIAJ
Packaging: Bulk
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 75 MHz
Input Capacitance: 4 pF
Supplier Device Package: SOEIAJ-20
Max Propagation Delay @ V, Max CL: 16.7ns @ 3.3V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20SOEIAJ
Packaging: Bulk
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 75 MHz
Input Capacitance: 4 pF
Supplier Device Package: SOEIAJ-20
Max Propagation Delay @ V, Max CL: 16.7ns @ 3.3V, 50pF
Number of Bits per Element: 8
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2049+ | 11.52 грн |
| MC74LVX373M |
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Виробник: onsemi
Description: IC DTYPE TRANSP SGL 8:8 20SOEIAJ
Packaging: Tube
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 5.8ns
Supplier Device Package: SOEIAJ-20
Description: IC DTYPE TRANSP SGL 8:8 20SOEIAJ
Packaging: Tube
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 5.8ns
Supplier Device Package: SOEIAJ-20
на замовлення 10880 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2049+ | 11.55 грн |
| MC74VHCT374AMEL |
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Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20SOEIAJ
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: SOEIAJ-20
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20SOEIAJ
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 130 MHz
Input Capacitance: 4 pF
Supplier Device Package: SOEIAJ-20
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Number of Bits per Element: 8
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| MC74LCX06MG |
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Виробник: onsemi
Description: IC INVERTER 6CH 1-INP SOEIAJ-14
Packaging: Tube
Features: Open Drain
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: -, 24mA
Number of Inputs: 1
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.7ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 6CH 1-INP SOEIAJ-14
Packaging: Tube
Features: Open Drain
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: -, 24mA
Number of Inputs: 1
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.7ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
на замовлення 25150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1480+ | 15.41 грн |
| MC74LCX04MELG |
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Виробник: onsemi
Description: IC INVERTER 6CH 1-INP SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 6CH 1-INP SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
на замовлення 48210 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1158+ | 19.76 грн |
| MC74LCX32MELG |
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Виробник: onsemi
Description: IC GATE OR 4CH 2-INP SOEIAJ-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Description: IC GATE OR 4CH 2-INP SOEIAJ-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
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| NCP1850FCCT1G |
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Виробник: onsemi
Description: IC BATT CHG LI-ION 1CELL 25WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 25-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 25-WLCSP (2.06x2.06)
Fault Protection: Over Voltage
Voltage - Supply (Max): 7.3V
Battery Pack Voltage: 4.5V (Max)
Description: IC BATT CHG LI-ION 1CELL 25WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 25-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 25-WLCSP (2.06x2.06)
Fault Protection: Over Voltage
Voltage - Supply (Max): 7.3V
Battery Pack Voltage: 4.5V (Max)
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| P3PS850BHG-08CR |
Виробник: onsemi
Description: IC CLK GEN EMI MODULATOR 8-WDFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC CLK GEN EMI MODULATOR 8-WDFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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| NE592N14G |
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Виробник: onsemi
Description: IC AMP GENERAL PURPOSE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Applications: Standard (General Purpose)
Voltage - Supply, Single/Dual (±): ±3V ~ 8V
Supplier Device Package: 14-PDIP
Number of Circuits: 1
Current - Supply: 18 mA
Current - Output / Channel: 10 mA
Description: IC AMP GENERAL PURPOSE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Applications: Standard (General Purpose)
Voltage - Supply, Single/Dual (±): ±3V ~ 8V
Supplier Device Package: 14-PDIP
Number of Circuits: 1
Current - Supply: 18 mA
Current - Output / Channel: 10 mA
на замовлення 2694 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 433+ | 48.87 грн |
| LA1787M-MPB-E |
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Виробник: onsemi
Description: RF RX AM/FM 520KHZ-1.71MHZ 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 8V
Applications: Audio
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 64-QFP (14x14)
Grade: Automotive
Description: RF RX AM/FM 520KHZ-1.71MHZ 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 8V
Applications: Audio
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 64-QFP (14x14)
Grade: Automotive
на замовлення 9097 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 114+ | 186.26 грн |
| LA1787M-MPB-E |
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Виробник: onsemi
Description: RF RX AM/FM 520KHZ-1.71MHZ 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 8V
Applications: Audio
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 64-QFP (14x14)
Grade: Automotive
Description: RF RX AM/FM 520KHZ-1.71MHZ 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 8V
Applications: Audio
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 64-QFP (14x14)
Grade: Automotive
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| CPH6021-TL-H |
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Виробник: onsemi
Description: RF TRANS NPN 12V 10GHZ 6CPH
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 14dB @ 1GHz
Power - Max: 700mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: 6-CPH
Description: RF TRANS NPN 12V 10GHZ 6CPH
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 14dB @ 1GHz
Power - Max: 700mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: 6-CPH
на замовлення 107980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1722+ | 13.05 грн |
| NB4N121KMNGEVB |
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Виробник: onsemi
Description: BOARD EVAL NB4N121 FANOUT BUFFER
Packaging: Box
Function: Clock Distribution
Type: Timing
Utilized IC / Part: NB4N121K
Supplied Contents: Board(s)
Description: BOARD EVAL NB4N121 FANOUT BUFFER
Packaging: Box
Function: Clock Distribution
Type: Timing
Utilized IC / Part: NB4N121K
Supplied Contents: Board(s)
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| NVLJWS070N06CLTAG |
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Виробник: onsemi
Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.4W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Qualification: AEC-Q101
Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.4W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Qualification: AEC-Q101
на замовлення 127673 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.48 грн |
| 10+ | 45.74 грн |
| 25+ | 37.96 грн |
| 100+ | 27.39 грн |
| 250+ | 23.34 грн |
| 500+ | 20.85 грн |
| 1000+ | 18.45 грн |
| SBS806M-TL-E |
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1567+ | 14.64 грн |
| NCP1010AP100 |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Load, Over Temperature, Over Voltage
Power (Watts): 19 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Load, Over Temperature, Over Voltage
Power (Watts): 19 W
на замовлення 2964 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 910+ | 23.23 грн |
| HGTG30N60C3D |
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Виробник: onsemi
Description: IGBT 600V 63A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247-3
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
Description: IGBT 600V 63A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247-3
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
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| LA4450L-E |
Виробник: onsemi
Description: IC AMP CLASS AB STEREO 20W 14SIP
Packaging: Tube
Features: Short-Circuit and Thermal Protection, Standby
Package / Case: 14-SIP
Output Type: 2-Channel (Stereo)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -35°C ~ 80°C (TA)
Voltage - Supply: 10V ~ 30V
Max Output Power x Channels @ Load: 20W x 1 @ 4Ohm
Supplier Device Package: 14-SIP
Description: IC AMP CLASS AB STEREO 20W 14SIP
Packaging: Tube
Features: Short-Circuit and Thermal Protection, Standby
Package / Case: 14-SIP
Output Type: 2-Channel (Stereo)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -35°C ~ 80°C (TA)
Voltage - Supply: 10V ~ 30V
Max Output Power x Channels @ Load: 20W x 1 @ 4Ohm
Supplier Device Package: 14-SIP
на замовлення 19360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 266.29 грн |
| FDS8882 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
Description: MOSFET N-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
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| IRF644B-FP001 |
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Виробник: onsemi
Description: MOSFET N-CH 250V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 250V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FDD5680 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V
Description: MOSFET N-CH 60V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 38.25 грн |
| FDD5680 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V
Description: MOSFET N-CH 60V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V
на замовлення 4627 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.83 грн |
| 10+ | 75.02 грн |
| 100+ | 52.74 грн |
| 500+ | 40.17 грн |
| 1000+ | 37.12 грн |
| KAI-16050-FXA-JD-B2 |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR CCD 16MP 71CPGA
Packaging: Bulk
Package / Case: 71-BCPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 4896H x 3264V
Supplier Device Package: 72-CPGA (47.24x45.34)
Frames per Second: 2.0
Description: IMAGE SENSOR CCD 16MP 71CPGA
Packaging: Bulk
Package / Case: 71-BCPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 4896H x 3264V
Supplier Device Package: 72-CPGA (47.24x45.34)
Frames per Second: 2.0
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 212893.35 грн |
| SZBZX84C68LT1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 68V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 68V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.56 грн |
| 6000+ | 1.30 грн |
| 9000+ | 1.09 грн |
| SZBZX84C68LT1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 68V 250MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 68V 250MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
на замовлення 71985 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.43 грн |
| 66+ | 4.85 грн |
| 137+ | 2.32 грн |
| 500+ | 2.11 грн |
| 1000+ | 1.99 грн |
| SZBZX84C62ET1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 62V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Qualification: AEC-Q101
Description: DIODE ZENER 62V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.07 грн |
| 6000+ | 2.64 грн |
| 9000+ | 2.48 грн |
| 15000+ | 2.15 грн |
| 21000+ | 2.05 грн |
| SZBZX84C62ET1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 62V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Qualification: AEC-Q101
Description: DIODE ZENER 62V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.87 грн |
| 36+ | 8.99 грн |
| 100+ | 5.58 грн |
| 500+ | 3.82 грн |
| 1000+ | 3.36 грн |
| SZBZX84C68ET1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 68V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 68V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.06 грн |
| 6000+ | 2.63 грн |
| 9000+ | 2.48 грн |
| 15000+ | 2.15 грн |
| 21000+ | 2.06 грн |
| 30000+ | 1.96 грн |
| 75000+ | 1.72 грн |
| SZBZX84C68ET1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 68V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 68V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
на замовлення 113994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.87 грн |
| 36+ | 8.91 грн |
| 100+ | 5.54 грн |
| 500+ | 3.80 грн |
| 1000+ | 3.34 грн |
| FGA5065ADF |
![]() |
Виробник: onsemi
Description: IGBT TRENCH/FS 650V 100A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/62.4ns
Switching Energy: 1.35mJ (on), 309µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 72.2 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 268 W
Description: IGBT TRENCH/FS 650V 100A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/62.4ns
Switching Energy: 1.35mJ (on), 309µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 72.2 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 268 W
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од. на суму грн.
| NV25640DTVLT3G |
![]() |
Виробник: onsemi
Description: IC EEPROM 64KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 8K x 8
Qualification: AEC-Q100
Description: IC EEPROM 64KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 8K x 8
Qualification: AEC-Q100
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 22.47 грн |
| NV25640DTVLT3G |
![]() |
Виробник: onsemi
Description: IC EEPROM 64KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 8K x 8
Qualification: AEC-Q100
Description: IC EEPROM 64KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 8K x 8
Qualification: AEC-Q100
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.61 грн |
| NLAS8252MUTAG |
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Виробник: onsemi
Description: IC SWITCH DP3T 12UQFN
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: UART, USB
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 12-UQFN (1.7x2)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Switch Circuit: DP3T
Number of Channels: 2
Description: IC SWITCH DP3T 12UQFN
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: UART, USB
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 12-UQFN (1.7x2)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Switch Circuit: DP3T
Number of Channels: 2
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од. на суму грн.
| FDI038AN06A0 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/80A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Description: MOSFET N-CH 60V 17A/80A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
товару немає в наявності
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| KA431AZBU |
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Виробник: onsemi
Description: IC VREF SHUNT ADJ 1% TO92-3
Packaging: Bulk
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% TO92-3
Packaging: Bulk
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 6995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.35 грн |
| 16+ | 20.52 грн |
| 25+ | 16.80 грн |
| 100+ | 11.81 грн |
| 250+ | 9.86 грн |
| 500+ | 8.66 грн |
| 1000+ | 7.53 грн |
| 2500+ | 6.46 грн |
| 5000+ | 5.80 грн |
| NVBG089N65S3F |
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Виробник: onsemi
Description: SF3 FRFET AUTO, 89MOHM, D2PAK 7L
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 18.5A, 10V
Power Dissipation (Max): 291W (Tc)
Vgs(th) (Max) @ Id: 5V @ 970µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3598 pF @ 400 V
Qualification: AEC-Q101
Description: SF3 FRFET AUTO, 89MOHM, D2PAK 7L
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 18.5A, 10V
Power Dissipation (Max): 291W (Tc)
Vgs(th) (Max) @ Id: 5V @ 970µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3598 pF @ 400 V
Qualification: AEC-Q101
на замовлення 2334 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 736.87 грн |
| 10+ | 489.31 грн |
| 100+ | 404.53 грн |
| SBRB2545CTG |
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Виробник: onsemi
Description: DIODE ARRAY SCHOTT 45V 15A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE ARRAY SCHOTT 45V 15A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 268+ | 81.35 грн |
| BZX84C39LT3G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 39V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Description: DIODE ZENER 39V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
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| BZX84C39LT1 |
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Виробник: onsemi
Description: DIODE ZENER 39V 225MW SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Description: DIODE ZENER 39V 225MW SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
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| BZX84C20LT3 |
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Виробник: onsemi
Description: DIODE ZENER 20V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Description: DIODE ZENER 20V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.28 грн |
| BZX84C20 |
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Виробник: onsemi
Description: ZENER SOT23 20V 0.3W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Description: ZENER SOT23 20V 0.3W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
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