Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MMSZ5V1ET1 | onsemi |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
на замовлення 5975 шт: термін постачання 21-31 дні (днів) |
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NLV74HC4020ADTR2G | onsemi |
![]() Packaging: Bulk |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
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FPF2G120BF07ASP | onsemi |
![]() Packaging: Tray Package / Case: Module Mounting Type: Through Hole Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: F2 IGBT Type: Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 156 W Current - Collector Cutoff (Max): 250 µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FPF2G120BF07AS | onsemi |
![]() Packaging: Tray Package / Case: Module Mounting Type: Through Hole Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: F2 IGBT Type: Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 156 W Current - Collector Cutoff (Max): 250 µA |
на замовлення 64 шт: термін постачання 21-31 дні (днів) |
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FPF1C2P5BF07A | onsemi |
![]() Packaging: Tray Package / Case: F1 Module Mounting Type: Chassis Mount Configuration: 5 N-Channel (Solar Inverter) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 90mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: F1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LC75812PTS-8565-H | onsemi |
Description: IC DRVR DOT MATRIX 100TQFP Packaging: Bulk Package / Case: 100-TQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: Dot Matrix Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Digits or Characters: 16 Characters, 240 Characters, 12 Digits, 13 Digits Supplier Device Package: 100-TQFP (14x14) Current - Supply: 500 µA |
на замовлення 512 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ5258BLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 27 V Qualification: AEC-Q101 |
на замовлення 72728 шт: термін постачання 21-31 дні (днів) |
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MMBZ5258BLT1 | onsemi |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 27 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FJV1845EMTF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V Frequency - Transition: 110MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FJV1845EMTF | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V Frequency - Transition: 110MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FEP16BTA | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N4730A | onsemi |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCPF1300N80ZYD | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCPF165N65S3L1 | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V |
на замовлення 34060 шт: термін постачання 21-31 дні (днів) |
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FCPF165N65S3R0L | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V |
на замовлення 2655 шт: термін постачання 21-31 дні (днів) |
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FCPF165N65S3R0L | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS16TT1 | onsemi |
![]() Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NXH100T120L3Q0S1NG | onsemi |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: 18-PIM/Q0PACK (55x32.5) Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 122 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 4877 pF @ 25 V |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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NXH011F120M3F2PTHG | onsemi |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 244W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V Gate Charge (Qg) (Max) @ Vgs: 284nC @ 18V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.4V @ 60mA Supplier Device Package: 34-PIM (56.7x42.5) |
на замовлення 199 шт: термін постачання 21-31 дні (днів) |
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NXH007F120M3F2PTHG | onsemi |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 353W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 149A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.4V @ 60mA Supplier Device Package: 34-PIM (56.7x42.5) |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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NXH004P120M3F2PTNG | onsemi |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.1kW (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 338A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V Vgs(th) (Max) @ Id: 4.4V @ 120mA Supplier Device Package: 36-PIM (56.7x62.8) |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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NXH004P120M3F2PNG | onsemi |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.098W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 338A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V Vgs(th) (Max) @ Id: 4.4V @ 120mA Supplier Device Package: 36-PIM (56.7x62.8) |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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SG1577ASY | onsemi |
Description: IC REG CTRLR BUCK/BOOST 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply (Vcc/Vdd): 10V ~ 15V Supplier Device Package: 20-SOIC Duty Cycle (Max): 95% Number of Outputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RD0504T-P-TL-H | onsemi |
Description: DIODE STANDARD 400V 5A TPFA Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 17 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TP-FA Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 400 V |
на замовлення 31500 шт: термін постачання 21-31 дні (днів) |
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RD0506LS-SB-1H | onsemi |
Description: DIODE STANDARD 600V 5A TO220F2FS Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-220F-2FS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 4649 шт: термін постачання 21-31 дні (днів) |
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MUN5136DW1T1G | onsemi |
![]() Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 100kOhms Resistor - Emitter Base (R2): 100kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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MC10H121P | onsemi |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Single-Ended Mounting Type: Through Hole Logic Type: AND/OR/INVERT Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 4 Schmitt Trigger Input: No Supplier Device Package: 16-PDIP Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC10H121M | onsemi |
![]() Packaging: Tube Package / Case: 16-SOIC (0.209", 5.30mm Width) Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: AND/OR/INVERT Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 4 Schmitt Trigger Input: No Supplier Device Package: 16-SOEIAJ Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC10H121FNR2 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-LCC (J-Lead) Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: AND/OR/INVERT Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 4 Schmitt Trigger Input: No Supplier Device Package: 20-PLCC (9x9) Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC10H121FNR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-LCC (J-Lead) Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: AND/OR/INVERT Gate Operating Temperature: 0°C ~ 75°C Number of Inputs: 4 Schmitt Trigger Input: No Supplier Device Package: 20-PLCC (9x9) Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC10H124P | onsemi |
Description: IC XLATOR QUAD TTL-MECL 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Differential Mounting Type: Through Hole Operating Temperature: 0°C ~ 75°C (TA) Supplier Device Package: 16-PDIP Channel Type: Unidirectional Output Signal: MECL Translator Type: Mixed Signal Channels per Circuit: 4 Input Signal: TTL Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC10H125L | onsemi |
Description: IC TRANSLATOR UNIDIR 16CDIP Packaging: Tube Package / Case: 16-CDIP (0.300", 7.62mm) Output Type: Non-Inverted Mounting Type: Through Hole Operating Temperature: 0°C ~ 75°C (TA) Supplier Device Package: 16-CDIP Channel Type: Unidirectional Output Signal: TTL Translator Type: Mixed Signal Channels per Circuit: 4 Input Signal: MECL Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NIV3071MTW4TWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-WQFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount, Wettable Flank Function: Electronic Fuse Voltage - Input: 8V ~ 60V Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Supplier Device Package: 16-WQFN (5x6) |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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NIV3071MTW4TWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-WQFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount, Wettable Flank Function: Electronic Fuse Voltage - Input: 8V ~ 60V Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Supplier Device Package: 16-WQFN (5x6) |
на замовлення 23135 шт: термін постачання 21-31 дні (днів) |
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NTBG045N065SC1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NTBG045N065SC1 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V |
на замовлення 4216 шт: термін постачання 21-31 дні (днів) |
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NVBG045N065SC1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVBG045N065SC1 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V Qualification: AEC-Q101 |
на замовлення 790 шт: термін постачання 21-31 дні (днів) |
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NCV8768CD33ABR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 35 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: 14-SOIC Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Reset, Watchdog Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NCV8768CD33ABR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 35 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: 14-SOIC Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Reset, Watchdog Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FJV992PMTF | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 300 mW |
на замовлення 20500 шт: термін постачання 21-31 дні (днів) |
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LC72722PM-TLM-E | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-SOIC (0.311", 7.90mm Width) Mounting Type: Surface Mount Voltage - Supply: 4.5V ~ 5.5V Gain: 31dB Supplier Device Package: 24-MFP Current - Supply: 9 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTJD4401NT1G-001 | onsemi |
Description: MOSFET 2N-CH 20V 630MA SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N4154 | onsemi |
![]() Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N4154TR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDP5N60NZ | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVTYS006N06CLTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV-RSL15-512-101Q40-AVG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -102dBm Mounting Type: Surface Mount, Wettable Flank Memory Size: 512kB Flash, 80kB RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.2V ~ 3.6V Power - Output: 6dBm Protocol: Bluetooth v5.2 Current - Receiving: 2.7mA ~ 6.7mA Data Rate (Max): 4Mbps Current - Transmitting: 4.3mA ~ 24.1mA Supplier Device Package: 40-QFNW (6x6) GPIO: 15 Modulation: FSK, GFSK, MSK, O-QPSK RF Family/Standard: Bluetooth Serial Interfaces: GPIO, HCI, I2C, JTAG, PCM, PWM, SPI, UART Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV-RSL15-512-101Q40-AVG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -102dBm Mounting Type: Surface Mount, Wettable Flank Memory Size: 512kB Flash, 80kB RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.2V ~ 3.6V Power - Output: 6dBm Protocol: Bluetooth v5.2 Current - Receiving: 2.7mA ~ 6.7mA Data Rate (Max): 4Mbps Current - Transmitting: 4.3mA ~ 24.1mA Supplier Device Package: 40-QFNW (6x6) GPIO: 15 Modulation: FSK, GFSK, MSK, O-QPSK RF Family/Standard: Bluetooth Serial Interfaces: GPIO, HCI, I2C, JTAG, PCM, PWM, SPI, UART Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3488 шт: термін постачання 21-31 дні (днів) |
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R3110-CBAA-E1T | onsemi |
![]() Packaging: Bulk Package / Case: 21-TFLGA Mounting Type: Surface Mount Function: Audio Signal Processor Applications: Consumer Audio Supplier Device Package: 21-SIP (3.1x5.08) Number of Channels: 2 |
на замовлення 26661 шт: термін постачання 21-31 дні (днів) |
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NLV14027BDG | onsemi |
![]() Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 3V ~ 18V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8.8mA, 8.8mA Trigger Type: Positive Edge Clock Frequency: 13 MHz Input Capacitance: 5 pF Supplier Device Package: 16-SOIC Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF Number of Bits per Element: 1 |
на замовлення 5856 шт: термін постачання 21-31 дні (днів) |
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NCV7340D14R2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1Mbps Protocol: CANbus Receiver Hysteresis: 900 mV Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV7340D14R2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1Mbps Protocol: CANbus Receiver Hysteresis: 900 mV Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2219 шт: термін постачання 21-31 дні (днів) |
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NTD4813NH-35G | onsemi |
![]() Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTD4909N-35G | onsemi |
![]() Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V |
на замовлення 19225 шт: термін постачання 21-31 дні (днів) |
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NTD4910N-35G | onsemi |
![]() Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 1.37W (Ta), 27.3W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 15 V |
на замовлення 11425 шт: термін постачання 21-31 дні (днів) |
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NTD4969N-35G | onsemi |
![]() Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 15 V |
на замовлення 43490 шт: термін постачання 21-31 дні (днів) |
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NTD3813N-35G | onsemi |
![]() Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 963 pF @ 12 V |
на замовлення 11550 шт: термін постачання 21-31 дні (днів) |
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NTD4909NA-35G | onsemi |
Description: MOSFET N-CH 30V 8.8A/41A IPAK Packaging: Bulk Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: IPAK Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V |
на замовлення 23773 шт: термін постачання 21-31 дні (днів) |
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NTD4970N-35G | onsemi |
![]() Packaging: Bulk Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 1.38W (Ta), 24.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 774 pF @ 15 V |
на замовлення 17337 шт: термін постачання 21-31 дні (днів) |
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MMSZ5V1ET1 |
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Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
на замовлення 5975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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5975+ | 3.63 грн |
NLV74HC4020ADTR2G |
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на замовлення 37500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
483+ | 47.12 грн |
FPF2G120BF07ASP |
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Виробник: onsemi
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
товару немає в наявності
В кошику
од. на суму грн.
FPF2G120BF07AS |
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Виробник: onsemi
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
на замовлення 64 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 7113.27 грн |
10+ | 6187.54 грн |
FPF1C2P5BF07A |
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Виробник: onsemi
Description: MOSFET 5N-CH 650V 36A F1
Packaging: Tray
Package / Case: F1 Module
Mounting Type: Chassis Mount
Configuration: 5 N-Channel (Solar Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 90mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: F1
Description: MOSFET 5N-CH 650V 36A F1
Packaging: Tray
Package / Case: F1 Module
Mounting Type: Chassis Mount
Configuration: 5 N-Channel (Solar Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 90mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: F1
товару немає в наявності
В кошику
од. на суму грн.
LC75812PTS-8565-H |
Виробник: onsemi
Description: IC DRVR DOT MATRIX 100TQFP
Packaging: Bulk
Package / Case: 100-TQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: Dot Matrix
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Digits or Characters: 16 Characters, 240 Characters, 12 Digits, 13 Digits
Supplier Device Package: 100-TQFP (14x14)
Current - Supply: 500 µA
Description: IC DRVR DOT MATRIX 100TQFP
Packaging: Bulk
Package / Case: 100-TQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: Dot Matrix
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Digits or Characters: 16 Characters, 240 Characters, 12 Digits, 13 Digits
Supplier Device Package: 100-TQFP (14x14)
Current - Supply: 500 µA
на замовлення 512 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
105+ | 211.08 грн |
SZMMBZ5258BLT1G |
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Виробник: onsemi
Description: DIODE ZENER 36V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Qualification: AEC-Q101
Description: DIODE ZENER 36V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Qualification: AEC-Q101
на замовлення 72728 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 18.26 грн |
29+ | 10.78 грн |
100+ | 4.44 грн |
500+ | 4.10 грн |
1000+ | 3.97 грн |
MMBZ5258BLT1 |
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Виробник: onsemi
Description: DIODE ZENER 36V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Description: DIODE ZENER 36V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9458+ | 2.20 грн |
FJV1845EMTF |
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Виробник: onsemi
Description: TRANS NPN 120V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Description: TRANS NPN 120V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
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FJV1845EMTF |
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Виробник: onsemi
Description: TRANS NPN 120V 0.05A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Description: TRANS NPN 120V 0.05A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
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FEP16BTA |
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Виробник: onsemi
Description: DIODE ARRAY GP 100V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE ARRAY GP 100V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N4730A |
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Виробник: onsemi
Description: DIODE ZENER 3.9V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: DIODE ZENER 3.9V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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FCPF1300N80ZYD |
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Виробник: onsemi
Description: MOSFET N-CH 800V 4A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
Description: MOSFET N-CH 800V 4A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
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FCPF165N65S3L1 |
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Виробник: onsemi
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
на замовлення 34060 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
237+ | 96.12 грн |
FCPF165N65S3R0L |
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Виробник: onsemi
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
на замовлення 2655 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
221+ | 102.94 грн |
FCPF165N65S3R0L |
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Виробник: onsemi
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
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NXH100T120L3Q0S1NG |
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Виробник: onsemi
Description: 1200V GEN III Q0PACK WITH NI-PLA
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: 18-PIM/Q0PACK (55x32.5)
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 122 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4877 pF @ 25 V
Description: 1200V GEN III Q0PACK WITH NI-PLA
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: 18-PIM/Q0PACK (55x32.5)
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 122 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4877 pF @ 25 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4439.44 грн |
24+ | 3886.41 грн |
48+ | 3756.87 грн |
NXH011F120M3F2PTHG |
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Виробник: onsemi
Description: MOSFET 4N-CH 1200V 105A 34PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 244W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 284nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
Description: MOSFET 4N-CH 1200V 105A 34PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 244W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 284nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
на замовлення 199 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 8001.64 грн |
NXH007F120M3F2PTHG |
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Виробник: onsemi
Description: MOSFET 4N-CH 1200V 149A 34PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 353W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V
Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
Description: MOSFET 4N-CH 1200V 149A 34PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 353W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 149A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9090pF @ 800V
Rds On (Max) @ Id, Vgs: 10mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
на замовлення 57 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 10900.14 грн |
20+ | 10228.82 грн |
NXH004P120M3F2PTNG |
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Виробник: onsemi
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 13754.18 грн |
NXH004P120M3F2PNG |
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Виробник: onsemi
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.098W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
Description: MOSFET 2N-CH 1200V 338A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.098W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 14560.77 грн |
SG1577ASY |
Виробник: onsemi
Description: IC REG CTRLR BUCK/BOOST 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply (Vcc/Vdd): 10V ~ 15V
Supplier Device Package: 20-SOIC
Duty Cycle (Max): 95%
Number of Outputs: 2
Description: IC REG CTRLR BUCK/BOOST 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply (Vcc/Vdd): 10V ~ 15V
Supplier Device Package: 20-SOIC
Duty Cycle (Max): 95%
Number of Outputs: 2
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RD0504T-P-TL-H |
Виробник: onsemi
Description: DIODE STANDARD 400V 5A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TP-FA
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Description: DIODE STANDARD 400V 5A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TP-FA
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
на замовлення 31500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
650+ | 34.96 грн |
RD0506LS-SB-1H |
Виробник: onsemi
Description: DIODE STANDARD 600V 5A TO220F2FS
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE STANDARD 600V 5A TO220F2FS
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 4649 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
567+ | 40.28 грн |
MUN5136DW1T1G |
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Виробник: onsemi
Description: MUN5136 - DUAL BIAS RESISTOR TRA
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: MUN5136 - DUAL BIAS RESISTOR TRA
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8663+ | 2.20 грн |
MC10H121P |
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Виробник: onsemi
Description: IC GATE OR/AND 4WIDE 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Single-Ended
Mounting Type: Through Hole
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Number of Circuits: 1
Description: IC GATE OR/AND 4WIDE 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Single-Ended
Mounting Type: Through Hole
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Number of Circuits: 1
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MC10H121M |
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Виробник: onsemi
Description: IC GATE OR/AND 4WIDE 16-SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-SOEIAJ
Number of Circuits: 1
Description: IC GATE OR/AND 4WIDE 16-SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 16-SOEIAJ
Number of Circuits: 1
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MC10H121FNR2 |
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Виробник: onsemi
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
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MC10H121FNR2G |
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Виробник: onsemi
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
Description: IC OR/AND INVERTER GATE 20PLCC
Packaging: Tape & Reel (TR)
Package / Case: 20-LCC (J-Lead)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: AND/OR/INVERT Gate
Operating Temperature: 0°C ~ 75°C
Number of Inputs: 4
Schmitt Trigger Input: No
Supplier Device Package: 20-PLCC (9x9)
Number of Circuits: 1
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MC10H124P |
Виробник: onsemi
Description: IC XLATOR QUAD TTL-MECL 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-PDIP
Channel Type: Unidirectional
Output Signal: MECL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: TTL
Number of Circuits: 1
Description: IC XLATOR QUAD TTL-MECL 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-PDIP
Channel Type: Unidirectional
Output Signal: MECL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: TTL
Number of Circuits: 1
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MC10H125L |
Виробник: onsemi
Description: IC TRANSLATOR UNIDIR 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-CDIP
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: MECL
Number of Circuits: 1
Description: IC TRANSLATOR UNIDIR 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 75°C (TA)
Supplier Device Package: 16-CDIP
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 4
Input Signal: MECL
Number of Circuits: 1
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NIV3071MTW4TWG |
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Виробник: onsemi
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 218.12 грн |
NIV3071MTW4TWG |
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Виробник: onsemi
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Cut Tape (CT)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
Description: EFUSE, 4 CHANNEL, 48V, 2.5A WETT
Packaging: Cut Tape (CT)
Package / Case: 16-WQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Electronic Fuse
Voltage - Input: 8V ~ 60V
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 16-WQFN (5x6)
на замовлення 23135 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 423.94 грн |
10+ | 339.66 грн |
100+ | 262.16 грн |
500+ | 241.27 грн |
NTBG045N065SC1 |
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Виробник: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 523.39 грн |
NTBG045N065SC1 |
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Виробник: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
на замовлення 4216 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1035.24 грн |
10+ | 697.98 грн |
100+ | 529.42 грн |
NVBG045N065SC1 |
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Виробник: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
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NVBG045N065SC1 |
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Виробник: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
на замовлення 790 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1228.94 грн |
10+ | 1042.53 грн |
100+ | 901.68 грн |
NCV8768CD33ABR2G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 52.98 грн |
5000+ | 49.64 грн |
NCV8768CD33ABR2G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 150MA 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 191.33 грн |
10+ | 115.67 грн |
25+ | 97.85 грн |
100+ | 72.89 грн |
250+ | 63.57 грн |
500+ | 57.84 грн |
1000+ | 52.18 грн |
FJV992PMTF |
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Виробник: onsemi
Description: TRANS PNP 120V 0.05A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Description: TRANS PNP 120V 0.05A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
на замовлення 20500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8876+ | 2.28 грн |
LC72722PM-TLM-E |
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Виробник: onsemi
Description: RF DEMODULATOR IC 24MFP
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.311", 7.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Gain: 31dB
Supplier Device Package: 24-MFP
Current - Supply: 9 mA
Description: RF DEMODULATOR IC 24MFP
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.311", 7.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Gain: 31dB
Supplier Device Package: 24-MFP
Current - Supply: 9 mA
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NTJD4401NT1G-001 |
Виробник: onsemi
Description: MOSFET 2N-CH 20V 630MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 20V 630MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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1N4154 |
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Виробник: onsemi
Description: DIODE STANDARD 35V 100MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE STANDARD 35V 100MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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1N4154TR |
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Виробник: onsemi
Description: DIODE STANDARD 35V 100MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE STANDARD 35V 100MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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FDP5N60NZ |
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Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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NVTYS006N06CLTWG |
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Виробник: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V
Qualification: AEC-Q101
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V
Qualification: AEC-Q101
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NCV-RSL15-512-101Q40-AVG |
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Виробник: onsemi
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -102dBm
Mounting Type: Surface Mount, Wettable Flank
Memory Size: 512kB Flash, 80kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 6dBm
Protocol: Bluetooth v5.2
Current - Receiving: 2.7mA ~ 6.7mA
Data Rate (Max): 4Mbps
Current - Transmitting: 4.3mA ~ 24.1mA
Supplier Device Package: 40-QFNW (6x6)
GPIO: 15
Modulation: FSK, GFSK, MSK, O-QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, JTAG, PCM, PWM, SPI, UART
Grade: Automotive
Qualification: AEC-Q100
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -102dBm
Mounting Type: Surface Mount, Wettable Flank
Memory Size: 512kB Flash, 80kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 6dBm
Protocol: Bluetooth v5.2
Current - Receiving: 2.7mA ~ 6.7mA
Data Rate (Max): 4Mbps
Current - Transmitting: 4.3mA ~ 24.1mA
Supplier Device Package: 40-QFNW (6x6)
GPIO: 15
Modulation: FSK, GFSK, MSK, O-QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, JTAG, PCM, PWM, SPI, UART
Grade: Automotive
Qualification: AEC-Q100
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NCV-RSL15-512-101Q40-AVG |
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Виробник: onsemi
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -102dBm
Mounting Type: Surface Mount, Wettable Flank
Memory Size: 512kB Flash, 80kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 6dBm
Protocol: Bluetooth v5.2
Current - Receiving: 2.7mA ~ 6.7mA
Data Rate (Max): 4Mbps
Current - Transmitting: 4.3mA ~ 24.1mA
Supplier Device Package: 40-QFNW (6x6)
GPIO: 15
Modulation: FSK, GFSK, MSK, O-QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, JTAG, PCM, PWM, SPI, UART
Grade: Automotive
Qualification: AEC-Q100
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -102dBm
Mounting Type: Surface Mount, Wettable Flank
Memory Size: 512kB Flash, 80kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 6dBm
Protocol: Bluetooth v5.2
Current - Receiving: 2.7mA ~ 6.7mA
Data Rate (Max): 4Mbps
Current - Transmitting: 4.3mA ~ 24.1mA
Supplier Device Package: 40-QFNW (6x6)
GPIO: 15
Modulation: FSK, GFSK, MSK, O-QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, JTAG, PCM, PWM, SPI, UART
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3488 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 547.79 грн |
10+ | 407.70 грн |
25+ | 371.30 грн |
100+ | 306.27 грн |
250+ | 283.77 грн |
500+ | 269.17 грн |
1000+ | 252.20 грн |
R3110-CBAA-E1T |
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Виробник: onsemi
Description: IC AUDIO SIGNAL PROCESSOR 21SIP
Packaging: Bulk
Package / Case: 21-TFLGA
Mounting Type: Surface Mount
Function: Audio Signal Processor
Applications: Consumer Audio
Supplier Device Package: 21-SIP (3.1x5.08)
Number of Channels: 2
Description: IC AUDIO SIGNAL PROCESSOR 21SIP
Packaging: Bulk
Package / Case: 21-TFLGA
Mounting Type: Surface Mount
Function: Audio Signal Processor
Applications: Consumer Audio
Supplier Device Package: 21-SIP (3.1x5.08)
Number of Channels: 2
на замовлення 26661 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 1263.26 грн |
NLV14027BDG |
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Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 18V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8.8mA, 8.8mA
Trigger Type: Positive Edge
Clock Frequency: 13 MHz
Input Capacitance: 5 pF
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 18V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8.8mA, 8.8mA
Trigger Type: Positive Edge
Clock Frequency: 13 MHz
Input Capacitance: 5 pF
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Number of Bits per Element: 1
на замовлення 5856 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1224+ | 18.32 грн |
NCV7340D14R2G |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Receiver Hysteresis: 900 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Receiver Hysteresis: 900 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
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NCV7340D14R2G |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Receiver Hysteresis: 900 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Receiver Hysteresis: 900 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2219 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 84.95 грн |
10+ | 73.01 грн |
25+ | 69.29 грн |
100+ | 49.93 грн |
250+ | 44.13 грн |
500+ | 41.80 грн |
1000+ | 31.98 грн |
NTD4813NH-35G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 7.6A/40A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 12 V
Description: MOSFET N-CH 30V 7.6A/40A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 12 V
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NTD4909N-35G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
на замовлення 19225 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1567+ | 13.93 грн |
NTD4910N-35G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A/37A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.37W (Ta), 27.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 15 V
Description: MOSFET N-CH 30V 8.2A/37A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.37W (Ta), 27.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 15 V
на замовлення 11425 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1567+ | 13.93 грн |
NTD4969N-35G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 9.4A/41A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 15 V
Description: MOSFET N-CH 30V 9.4A/41A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 15 V
на замовлення 43490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1480+ | 14.66 грн |
NTD3813N-35G |
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Виробник: onsemi
Description: MOSFET N-CH 16V 9.6A/51A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V
Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 963 pF @ 12 V
Description: MOSFET N-CH 16V 9.6A/51A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V
Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 963 pF @ 12 V
на замовлення 11550 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1402+ | 15.39 грн |
NTD4909NA-35G |
Виробник: onsemi
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
на замовлення 23773 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1101+ | 19.79 грн |
NTD4970N-35G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 8.5A/36A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 24.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 774 pF @ 15 V
Description: MOSFET N-CH 30V 8.5A/36A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 24.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 774 pF @ 15 V
на замовлення 17337 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
820+ | 27.12 грн |