| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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1N4002GP | onsemi |
Description: DIODE STANDARD 100V 1A DO41Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 25000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BD437 | onsemi |
Description: TRANS NPN 45V 4A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 36 W |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BC557CZL1 | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
на замовлення 58000 шт: термін постачання 21-31 дні (днів) |
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BC557BZL1 | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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BC557AZL1G | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
на замовлення 52000 шт: термін постачання 21-31 дні (днів) |
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BC557CG | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
на замовлення 112216 шт: термін постачання 21-31 дні (днів) |
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BC557CZL1G | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
на замовлення 46148 шт: термін постачання 21-31 дні (днів) |
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BC557BRL1G | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
на замовлення 102620 шт: термін постачання 21-31 дні (днів) |
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BC557BZL1G | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
на замовлення 49500 шт: термін постачання 21-31 дні (днів) |
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BC557BG | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
на замовлення 17792 шт: термін постачання 21-31 дні (днів) |
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NTR5198NLT3G | onsemi |
Description: SINGLE N CHANNEL LOGIC LEVEL POWPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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N24C02UVTG | onsemi |
Description: IC EEPROM 2KBIT I2C 1MHZ US8Packaging: Bulk Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: US8 Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 128 x 16 DigiKey Programmable: Not Verified |
на замовлення 21984 шт: термін постачання 21-31 дні (днів) |
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2N3771G | onsemi |
Description: TRANS NPN 40V 30A TO204Packaging: Tray Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V Frequency - Transition: 200kHz Supplier Device Package: TO-204 (TO-3) Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 150 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14512BD | onsemi |
Description: IC DATA SELECT/MUX 1X8:1 16-SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:1 Type: Data Selector/Multiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 1 Current - Output High, Low: 8.8mA, 8.8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOIC |
на замовлення 1059 шт: термін постачання 21-31 дні (днів) |
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UC2842BNG | onsemi |
Description: IC REG CTRLR BST FLYBK ISO 8-DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Driver Mounting Type: Through Hole Function: Step-Up, Step-Up/Step-Down Operating Temperature: -25°C ~ 85°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: Up to 500kHz Topology: Boost, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 30V Supplier Device Package: 8-PDIP Synchronous Rectifier: No Control Features: Frequency Control Output Phases: 1 Duty Cycle (Max): 96% Clock Sync: No Number of Outputs: 1 |
на замовлення 3854 шт: термін постачання 21-31 дні (днів) |
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NDF04N60ZH | onsemi |
Description: MOSFET N-CH 600V 4.8A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220-2 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
на замовлення 134255 шт: термін постачання 21-31 дні (днів) |
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NDF04N60ZG | onsemi |
Description: MOSFET N-CH 600V 4.8A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
на замовлення 51457 шт: термін постачання 21-31 дні (днів) |
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NTMFSC1D9N08XTWG | onsemi |
Description: MOSFET POWERTRENCH T10, SINGLE,Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 252µA Supplier Device Package: 8-DFN (5x6.15) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V |
на замовлення 2845 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2845 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTMFSC1D9N08XTWG | onsemi |
Description: MOSFET POWERTRENCH T10, SINGLE,Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 252µA Supplier Device Package: 8-DFN (5x6.15) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V |
на замовлення 4981 шт: термін постачання 21-31 дні (днів) |
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MMBT2907AWT1G | onsemi |
Description: TRANS PNP 60V 0.6A SC70-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 150 mW |
на замовлення 977734 шт: термін постачання 21-31 дні (днів) |
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MM74HCT74M | onsemi |
Description: IC FF D-TYPE DOUBLE 1BIT 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 4.8mA, 4.8mA Trigger Type: Positive Edge Clock Frequency: 27 MHz Input Capacitance: 5 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 35ns @ 5V, 50pF Number of Bits per Element: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC74ASJX | onsemi |
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOPPackaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 94 MHz Input Capacitance: 5 pF Supplier Device Package: 14-SOP Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF Number of Bits per Element: 1 |
на замовлення 2868 шт: термін постачання 21-31 дні (днів) |
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ES2D | onsemi |
Description: DIODE STANDARD 200V 2A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 516000 шт: термін постачання 21-31 дні (днів) |
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ES2D | onsemi |
Description: DIODE STANDARD 200V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 519427 шт: термін постачання 21-31 дні (днів) |
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BC556BTFR | onsemi |
Description: TRANS PNP 65V 0.1A TO-92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BC556BTFR | onsemi |
Description: TRANS PNP 65V 0.1A TO-92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM5Z8V2T5G | onsemi |
Description: DIODE ZENER 8.2V 500MW SOD523Packaging: Tape & Reel (TR) Tolerance: ±6.1% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-523 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 700 nA @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| LV23401V-TLM-H | onsemi |
Description: 1-CHIP TUNER IC INCORPORATING FLPackaging: Bulk Package / Case: 30-LSSOP (0.220", 5.60mm Width) Mounting Type: Surface Mount Function: Tuner Frequency: 76MHz ~ 108MHz RF Type: AM, FM Supplier Device Package: 30-SSOP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74ABT541CSCX | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTLUS4195PZTBG | onsemi |
Description: MOSFET P-CH 30V 2A 6UDFNPackaging: Bulk Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NGTB25N120FL2WG | onsemi |
Description: IGBT FIELD STOP 1200V 50A TO-247Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 154 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 87ns/179ns Switching Energy: 1.95mJ (on), 600µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 178 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 385 W |
на замовлення 66796 шт: термін постачання 21-31 дні (днів) |
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BD138 | onsemi |
Description: TRANS PNP 60V 1.5A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.25 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTS8100MFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 8A 5DFNPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A Current - Reverse Leakage @ Vr: 70 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTS8100MFST1G | onsemi |
Description: DIODE SCHOTTKY 100V 8A 5DFNPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A Current - Reverse Leakage @ Vr: 70 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSA992FBTA | onsemi |
Description: TRANS PNP 120V 0.05A TO-92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 430 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSA992FBTA | onsemi |
Description: TRANS PNP 120V 0.05A TO-92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 430 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSA992FBTA | onsemi |
Description: TRANS PNP 120V 0.05A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 430 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
на замовлення 1878158 шт: термін постачання 21-31 дні (днів) |
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FQP3N80C | onsemi |
Description: MOSFET N-CH 800V 3A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD680 | onsemi |
Description: TRANS PNP DARL 80V 4A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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2SK2628LS | onsemi |
Description: N-CHANNEL SILICON MOSFETPackaging: Bulk |
на замовлення 5657 шт: термін постачання 21-31 дні (днів) |
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2SK2624LS-CD11 | onsemi |
Description: N-CHANNEL SILICON MOSFETPackaging: Bulk |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FAN4801SMY | onsemi |
Description: IC PFC CTR AV CURR 268KHZ 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 11V ~ 26V Frequency - Switching: 240kHz ~ 268kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 30 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM2576TV-012G | onsemi |
Description: IC REG BUCK 12V 3A TO220-5Packaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: Fixed Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive or Negative Frequency - Switching: 52kHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: TO-220-5 Synchronous Rectifier: No Voltage - Input (Min): 7V Voltage - Output (Min/Fixed): 12V |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||||||||
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ES1JFL | onsemi |
Description: DIODE STANDARD 600V 1A SOD123FPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ES1JFL | onsemi |
Description: DIODE STANDARD 600V 1A SOD123FPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V |
на замовлення 1609 шт: термін постачання 21-31 дні (днів) |
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| NOIH2SM1000T-HHC | onsemi |
Description: HIGH ACCURACY STAR TRACKER CMOSPackaging: Bulk Package / Case: 84-CLCC Window (J-Lead) Type: CMOS Pixel Size: 18µm x 18µm Active Pixel Array: 1024H x 1024V Supplier Device Package: 84-JLCC (29.21x29.21) Frames per Second: 4.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NOIS1SM1000A-HWC | onsemi |
Description: CMOS IMAGE SENSOR, 1 MP, RADIATIPackaging: Bulk Package / Case: 84-CLCC Window (J-Lead) Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5.5V Pixel Size: 15µm x 15µm Active Pixel Array: 1024H x 1024V Supplier Device Package: 84-JLCC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NOIS1SM1000S-HWC | onsemi |
Description: CMOS IMAGE SENSOR, 1 MP, RADIATIPackaging: Bulk Package / Case: 84-CLCC Window (J-Lead) Type: CMOS Pixel Size: 15µm x 15µm Active Pixel Array: 1024H x 1024V Supplier Device Package: 84-JLCC (29.21x29.21) Frames per Second: 11.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NJVMJD44H11D3T4G | onsemi |
Description: TRANS NPN 80V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 85MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 20 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC100EP31DG | onsemi |
Description: IC FF D-TYPE SINGLE 1BIT 8-SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: -3V ~ -5.5V Current - Quiescent (Iq): 45 mA Trigger Type: Positive Edge Clock Frequency: 3 GHz Supplier Device Package: 8-SOIC Number of Bits per Element: 1 |
на замовлення 27144 шт: термін постачання 21-31 дні (днів) |
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LB1848M-TRM-H | onsemi |
Description: BIDIRECTIONAL MOTOR DRIVERPackaging: Bulk |
на замовлення 1370 шт: термін постачання 21-31 дні (днів) |
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MC33063AVP | onsemi |
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Up, Step-Down Current - Output: 1.5A (Switch) Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive or Negative Frequency - Switching: 100kHz Voltage - Input (Max): 40V Topology: Buck, Boost Supplier Device Package: 8-PDIP Synchronous Rectifier: No Voltage - Output (Max): 40V (Switch) Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 1.25V |
на замовлення 134772 шт: термін постачання 21-31 дні (днів) |
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1N5241B | onsemi |
Description: DIODE ZENER 11V 500MW DO35Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V |
на замовлення 44891 шт: термін постачання 21-31 дні (днів) |
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1N5243B | onsemi |
Description: DIODE ZENER 13V 500MW DO35Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 13 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V |
на замовлення 72284 шт: термін постачання 21-31 дні (днів) |
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1N5244B | onsemi |
Description: DIODE ZENER 14V 500MW DO35Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 10 V |
на замовлення 45228 шт: термін постачання 21-31 дні (днів) |
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NCP1342AMDCDDD1R2G | onsemi |
Description: HIGH FREQUENCY QUASI-RESONANT FLPackage / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Supplier Device Package: 9-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FOD3184TSR2 | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
товару немає в наявності |
Мінімальне замовлення: 700 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC74HCT125ADG | onsemi |
Description: IC BUFF 2V/6V 14-SOIC Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 14-SOIC |
на замовлення 107660 шт: термін постачання 21-31 дні (днів) |
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TL431BCP | onsemi |
Description: IC VREF SHUNT ADJ 0.4% 8DIPPackaging: Tube Tolerance: ±0.4% Package / Case: 8-DIP (0.300", 7.62mm) Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: 8-PDIP Voltage - Output (Min/Fixed): 2.495V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 40027 шт: термін постачання 21-31 дні (днів) |
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TL431BCP | onsemi |
Description: IC VREF SHUNT ADJ 0.4% 8DIPPackaging: Tube Tolerance: ±0.4% Package / Case: 8-DIP (0.300", 7.62mm) Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: 8-PDIP Voltage - Output (Min/Fixed): 2.495V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. |
| 1N4002GP |
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Виробник: onsemi
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 25000 шт
В кошику
од. на суму грн.
| BD437 |
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Виробник: onsemi
Description: TRANS NPN 45V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 36 W
Description: TRANS NPN 45V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 36 W
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BC557CZL1 |
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Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
на замовлення 58000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4537+ | 4.71 грн |
| BC557BZL1 |
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Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4537+ | 4.71 грн |
| BC557AZL1G |
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Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
на замовлення 52000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3620+ | 5.38 грн |
| BC557CG |
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Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
на замовлення 112216 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2273+ | 8.75 грн |
| BC557CZL1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
на замовлення 46148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2273+ | 8.75 грн |
| BC557BRL1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
на замовлення 102620 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1817+ | 11.44 грн |
| BC557BZL1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
на замовлення 49500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1817+ | 11.44 грн |
| BC557BG |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
на замовлення 17792 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1817+ | 11.44 грн |
| NTR5198NLT3G |
![]() |
Виробник: onsemi
Description: SINGLE N CHANNEL LOGIC LEVEL POW
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
Description: SINGLE N CHANNEL LOGIC LEVEL POW
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| N24C02UVTG |
![]() |
Виробник: onsemi
Description: IC EEPROM 2KBIT I2C 1MHZ US8
Packaging: Bulk
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: US8
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 1MHZ US8
Packaging: Bulk
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: US8
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
на замовлення 21984 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1275+ | 16.02 грн |
| 2N3771G |
![]() |
Виробник: onsemi
Description: TRANS NPN 40V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
Frequency - Transition: 200kHz
Supplier Device Package: TO-204 (TO-3)
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 W
Description: TRANS NPN 40V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
Frequency - Transition: 200kHz
Supplier Device Package: TO-204 (TO-3)
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 W
товару немає в наявності
В кошику
од. на суму грн.
| MC14512BD |
![]() |
Виробник: onsemi
Description: IC DATA SELECT/MUX 1X8:1 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Description: IC DATA SELECT/MUX 1X8:1 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
на замовлення 1059 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 790+ | 25.69 грн |
| UC2842BNG |
![]() |
Виробник: onsemi
Description: IC REG CTRLR BST FLYBK ISO 8-DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 1
Description: IC REG CTRLR BST FLYBK ISO 8-DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up, Step-Up/Step-Down
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 1
на замовлення 3854 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 362+ | 55.41 грн |
| NDF04N60ZH |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 4.8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-2 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: MOSFET N-CH 600V 4.8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-2 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
на замовлення 134255 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 673+ | 30.28 грн |
| NDF04N60ZG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 4.8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: MOSFET N-CH 600V 4.8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
на замовлення 51457 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 550+ | 37.01 грн |
| NTMFSC1D9N08XTWG |
![]() |
Виробник: onsemi
Description: MOSFET POWERTRENCH T10, SINGLE,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 252µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V
Description: MOSFET POWERTRENCH T10, SINGLE,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 252µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V
на замовлення 2845 шт:
термін постачання 21-31 дні (днів)
| NTMFSC1D9N08XTWG |
![]() |
Виробник: onsemi
Description: MOSFET POWERTRENCH T10, SINGLE,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 252µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V
Description: MOSFET POWERTRENCH T10, SINGLE,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 252µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V
на замовлення 4981 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 241.17 грн |
| 10+ | 151.60 грн |
| 100+ | 105.43 грн |
| 500+ | 80.42 грн |
| 1000+ | 79.31 грн |
| MMBT2907AWT1G |
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Виробник: onsemi
Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
на замовлення 977734 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12183+ | 1.35 грн |
| MM74HCT74M |
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Виробник: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 4.8mA, 4.8mA
Trigger Type: Positive Edge
Clock Frequency: 27 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 35ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 4.8mA, 4.8mA
Trigger Type: Positive Edge
Clock Frequency: 27 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 35ns @ 5V, 50pF
Number of Bits per Element: 1
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| MM74HC74ASJX |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 94 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 94 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Bits per Element: 1
на замовлення 2868 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 469+ | 42.73 грн |
| ES2D |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 516000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 9.88 грн |
| 6000+ | 8.69 грн |
| 9000+ | 8.27 грн |
| 15000+ | 7.32 грн |
| 21000+ | 7.05 грн |
| 30000+ | 6.80 грн |
| ES2D |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 519427 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.35 грн |
| 11+ | 27.76 грн |
| 100+ | 17.75 грн |
| 500+ | 12.61 грн |
| 1000+ | 11.31 грн |
| BC556BTFR |
![]() |
Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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Мінімальне замовлення: 2000 шт
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| BC556BTFR |
![]() |
Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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| MM5Z8V2T5G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 8.2V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±6.1%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Description: DIODE ZENER 8.2V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±6.1%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
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| LV23401V-TLM-H |
![]() |
Виробник: onsemi
Description: 1-CHIP TUNER IC INCORPORATING FL
Packaging: Bulk
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Tuner
Frequency: 76MHz ~ 108MHz
RF Type: AM, FM
Supplier Device Package: 30-SSOP
Description: 1-CHIP TUNER IC INCORPORATING FL
Packaging: Bulk
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Tuner
Frequency: 76MHz ~ 108MHz
RF Type: AM, FM
Supplier Device Package: 30-SSOP
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| 74ABT541CSCX |
![]() |
Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SOIC
Description: IC BUFF NON-INVERT 5.5V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SOIC
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| NTLUS4195PZTBG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 30V 2A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
Description: MOSFET P-CH 30V 2A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 865+ | 23.66 грн |
| NGTB25N120FL2WG |
![]() |
Виробник: onsemi
Description: IGBT FIELD STOP 1200V 50A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 154 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 87ns/179ns
Switching Energy: 1.95mJ (on), 600µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
Description: IGBT FIELD STOP 1200V 50A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 154 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 87ns/179ns
Switching Energy: 1.95mJ (on), 600µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
на замовлення 66796 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 61+ | 329.82 грн |
| BD138 |
![]() |
Виробник: onsemi
Description: TRANS PNP 60V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
Description: TRANS PNP 60V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
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Мінімальне замовлення: 2500 шт
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| NTS8100MFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 8A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
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| NTS8100MFST1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 8A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
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| KSA992FBTA |
![]() |
Виробник: onsemi
Description: TRANS PNP 120V 0.05A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 430 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: TRANS PNP 120V 0.05A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 430 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
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| KSA992FBTA |
![]() |
Виробник: onsemi
Description: TRANS PNP 120V 0.05A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 430 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: TRANS PNP 120V 0.05A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 430 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
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| KSA992FBTA |
![]() |
Виробник: onsemi
Description: TRANS PNP 120V 0.05A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 430 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: TRANS PNP 120V 0.05A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 430 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 1878158 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4494+ | 4.67 грн |
| FQP3N80C |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Description: MOSFET N-CH 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
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| BD680 |
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Виробник: onsemi
Description: TRANS PNP DARL 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: TRANS PNP DARL 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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Мінімальне замовлення: 2000 шт
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| 2SK2628LS |
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на замовлення 5657 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 454+ | 44.42 грн |
| 2SK2624LS-CD11 |
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на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 252+ | 80.09 грн |
| FAN4801SMY |
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Виробник: onsemi
Description: IC PFC CTR AV CURR 268KHZ 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 240kHz ~ 268kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 30 µA
Description: IC PFC CTR AV CURR 268KHZ 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 240kHz ~ 268kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 30 µA
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| LM2576TV-012G |
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Виробник: onsemi
Description: IC REG BUCK 12V 3A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 12V
Description: IC REG BUCK 12V 3A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 12V
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
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| ES1JFL |
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Виробник: onsemi
Description: DIODE STANDARD 600V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Description: DIODE STANDARD 600V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
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Мінімальне замовлення: 3000 шт
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| ES1JFL |
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Виробник: onsemi
Description: DIODE STANDARD 600V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Description: DIODE STANDARD 600V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
на замовлення 1609 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.78 грн |
| 12+ | 26.85 грн |
| 100+ | 17.13 грн |
| 500+ | 12.16 грн |
| 1000+ | 10.90 грн |
| NOIH2SM1000T-HHC |
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Виробник: onsemi
Description: HIGH ACCURACY STAR TRACKER CMOS
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Pixel Size: 18µm x 18µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC (29.21x29.21)
Frames per Second: 4.0
Description: HIGH ACCURACY STAR TRACKER CMOS
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Pixel Size: 18µm x 18µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC (29.21x29.21)
Frames per Second: 4.0
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| NOIS1SM1000A-HWC |
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Виробник: onsemi
Description: CMOS IMAGE SENSOR, 1 MP, RADIATI
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5.5V
Pixel Size: 15µm x 15µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC
Description: CMOS IMAGE SENSOR, 1 MP, RADIATI
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5.5V
Pixel Size: 15µm x 15µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC
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| NOIS1SM1000S-HWC |
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Виробник: onsemi
Description: CMOS IMAGE SENSOR, 1 MP, RADIATI
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Pixel Size: 15µm x 15µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC (29.21x29.21)
Frames per Second: 11.0
Description: CMOS IMAGE SENSOR, 1 MP, RADIATI
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Pixel Size: 15µm x 15µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC (29.21x29.21)
Frames per Second: 11.0
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| NJVMJD44H11D3T4G |
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Виробник: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
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| MC100EP31DG |
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Виробник: onsemi
Description: IC FF D-TYPE SINGLE 1BIT 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 45 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 8-SOIC
Number of Bits per Element: 1
Description: IC FF D-TYPE SINGLE 1BIT 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 45 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 8-SOIC
Number of Bits per Element: 1
на замовлення 27144 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 592.22 грн |
| LB1848M-TRM-H |
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на замовлення 1370 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 202+ | 100.73 грн |
| MC33063AVP |
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Виробник: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
на замовлення 134772 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 699+ | 28.71 грн |
| 1N5241B |
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Виробник: onsemi
Description: DIODE ZENER 11V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Description: DIODE ZENER 11V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
на замовлення 44891 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.00 грн |
| 48+ | 6.35 грн |
| 100+ | 3.90 грн |
| 500+ | 2.66 грн |
| 1000+ | 2.33 грн |
| 2000+ | 2.05 грн |
| 5000+ | 1.73 грн |
| 10000+ | 1.54 грн |
| 1N5243B |
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Виробник: onsemi
Description: DIODE ZENER 13V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Description: DIODE ZENER 13V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
на замовлення 72284 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.00 грн |
| 48+ | 6.43 грн |
| 100+ | 3.93 грн |
| 500+ | 2.68 грн |
| 1000+ | 2.35 грн |
| 2000+ | 2.07 грн |
| 5000+ | 1.74 грн |
| 10000+ | 1.56 грн |
| 50000+ | 1.23 грн |
| 1N5244B |
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Виробник: onsemi
Description: DIODE ZENER 14V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Description: DIODE ZENER 14V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
на замовлення 45228 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.00 грн |
| 48+ | 6.35 грн |
| 100+ | 3.90 грн |
| 500+ | 2.66 грн |
| 1000+ | 2.33 грн |
| 2000+ | 2.05 грн |
| 5000+ | 1.73 грн |
| 10000+ | 1.54 грн |
| NCP1342AMDCDDD1R2G |
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Виробник: onsemi
Description: HIGH FREQUENCY QUASI-RESONANT FL
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Supplier Device Package: 9-SOIC
Description: HIGH FREQUENCY QUASI-RESONANT FL
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Supplier Device Package: 9-SOIC
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| FOD3184TSR2 |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
товару немає в наявності
Мінімальне замовлення: 700 шт
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од. на суму грн.
| MC74HCT125ADG |
Виробник: onsemi
Description: IC BUFF 2V/6V 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 14-SOIC
Description: IC BUFF 2V/6V 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 14-SOIC
на замовлення 107660 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1085+ | 18.84 грн |
| TL431BCP |
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Виробник: onsemi
Description: IC VREF SHUNT ADJ 0.4% 8DIP
Packaging: Tube
Tolerance: ±0.4%
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 0.4% 8DIP
Packaging: Tube
Tolerance: ±0.4%
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 40027 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1372+ | 14.87 грн |
| TL431BCP |
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Виробник: onsemi
Description: IC VREF SHUNT ADJ 0.4% 8DIP
Packaging: Tube
Tolerance: ±0.4%
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 0.4% 8DIP
Packaging: Tube
Tolerance: ±0.4%
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товару немає в наявності
В кошику
од. на суму грн.





































