| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS9014DBU | onsemi |
Description: TRANS NPN 45V 0.1A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V Frequency - Transition: 270MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 450 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
UG3SC120009K4S | onsemi |
Description: 1200V/9MO,SICFET,DG,G3,TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 320mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8157 pF @ 800 V |
на замовлення 487 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CM1426-04CP | onsemi |
Description: DATA LINE FILTER, 4 FUNCTION(S)Packaging: Bulk |
на замовлення 2098 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
UF4C120070B7S | onsemi |
Description: 1200V/70MO,SICFET,G4,TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.7A (Tj) Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
UF4C120070B7S | onsemi |
Description: 1200V/70MO,SICFET,G4,TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.7A (Tj) Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V |
на замовлення 785 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
UF4C120053B7S | onsemi |
Description: 1200V/53MO,SICFET,G4,TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tj) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
UF4C120053B7S | onsemi |
Description: 1200V/53MO,SICFET,G4,TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tj) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V |
на замовлення 778 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
UF4SC120030B7S | onsemi |
Description: 1200V/30MO,SICFET,G4,TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tj) Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 800 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
UF4SC120030B7S | onsemi |
Description: 1200V/30MO,SICFET,G4,TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tj) Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 800 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
UF4SC120023B7S | onsemi |
Description: 1200V/23MO,SICFET,G4,TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 12V Power Dissipation (Max): 385W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
UF4SC120023B7S | onsemi |
Description: 1200V/23MO,SICFET,G4,TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 12V Power Dissipation (Max): 385W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V |
на замовлення 1463 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MOC3021FM | onsemi |
Description: OPTOISOLTR 7.5KV TRIAC 1CH 6-SMDPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Voltage - Isolation: 7500Vpk Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 15mA Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
CAT5401YI-50-T2 | onsemi |
Description: IC DGTL POT 50KOHM 64TAP 24TSSOPResistance (Ohms): 50k Tolerance: ±20% Features: Selectable Address Packaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: SPI Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 64 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 24-TSSOP Resistance - Wiper (Ohms) (Typ): 200 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 4 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
FAN5361UMP123X | onsemi |
Description: IC REG BUCK 1.233V 600MA 6UMLPPackaging: Bulk Package / Case: 6-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 600mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 6MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 6-UMLP (2x2) Synchronous Rectifier: Yes Voltage - Input (Min): 2.3V Voltage - Output (Min/Fixed): 1.233V |
на замовлення 46123 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
FAN53611UC123X | onsemi |
Description: IC REG BUCK 1.233V 1A 6WLCSPPackaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 6MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 6-WLCSP (1.23x0.88) Synchronous Rectifier: Yes Voltage - Input (Min): 2.3V Voltage - Output (Min/Fixed): 1.233V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MM74HC4020N | onsemi |
Description: IC BINARY COUNTER 14-BIT 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 16-PDIP Voltage - Supply: 2 V ~ 6 V Count Rate: 50 MHz Number of Bits per Element: 14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NSVBAT54M3T5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOT723Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NSVBAT54M3T5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOT723Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 |
на замовлення 12043 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MC74ACT14DG | onsemi |
Description: IC INVERT SCHMITT 6CH 1IN 14SOICFeatures: Schmitt Trigger Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 11.5ns @ 5V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
на замовлення 80841 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BC847AMTF | onsemi |
Description: TRANS NPN 45V 0.1A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NVTFS4C08NTWG | onsemi |
Description: MOSFET N-CH 30V 17A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NVTFS4C08NTWG | onsemi |
Description: MOSFET N-CH 30V 17A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 4950 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NVTFS4C08NWFTAG | onsemi |
Description: MOSFET N-CH 30V 17A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NVTFS4C08NWFTAG | onsemi |
Description: MOSFET N-CH 30V 17A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NVTFS4C08NWFTWG | onsemi |
Description: MOSFET N-CH 30V 17A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NVTFS4C08NWFTWG | onsemi |
Description: MOSFET N-CH 30V 17A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BD135 | onsemi |
Description: TRANS NPN 45V 1.5A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.25 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 2W04G | onsemi |
Description: BRIDGE RECT 1PHASE 400V 2A WOBPackaging: Bulk Package / Case: 4-Circular, WOB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOB Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
NV25320DTHFT3G | onsemi |
Description: IC EEPROM 32KBIT SPI 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 150°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Access Time: 40 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NV25320DTHFT3G | onsemi |
Description: IC EEPROM 32KBIT SPI 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 150°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Access Time: 40 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 29514 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
1N4148WT | onsemi |
Description: DIODE STANDARD 75V 200MA SOD523FPackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 375600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
1N4148WT | onsemi |
Description: DIODE STANDARD 75V 200MA SOD523FPackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 376024 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
1N4148WS | onsemi |
Description: DIODE STANDARD 75V 150MA SOD323FPackaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 351170 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
1N4148WS | onsemi |
Description: DIODE STANDARD 75V 150MA SOD323FPackaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 351904 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BDW94C | onsemi |
Description: TRANS PNP DARL 100V 12A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 80 W |
на замовлення 5246 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NVBG070N120M3S-IE | onsemi |
Description: SIC MOS D2PAK-7L 70MOHM M3S 1200Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NVBG070N120M3S-IE | onsemi |
Description: SIC MOS D2PAK-7L 70MOHM M3S 1200Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NVH4L070N120M3S-IE | onsemi |
Description: SIC MOS TO247-4L 70MOHM M3S 1200Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| ENGNTHL070N120M3S | onsemi |
Description: SIC DISCRETES Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ENGNTTC070N120M3S | onsemi |
Description: SIC DISCRETES Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ENGNVTC070N120M3S | onsemi |
Description: SIC DISCRETES Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
LM431SACMFX | onsemi |
Description: IC VREF SHUNT ADJ 2% SOT23F-3Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: SOT-23F-3 Voltage - Output (Min/Fixed): 2.5V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
LM431SACMFX | onsemi |
Description: IC VREF SHUNT ADJ 2% SOT23F-3Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: SOT-23F-3 Voltage - Output (Min/Fixed): 2.5V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 6324 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NSPU2131MUT5G | onsemi |
Description: TVS DIODE 13.5VWM 23VC 2UDFNPackaging: Tape & Reel (TR) Package / Case: 2-UDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 550pF @ 1MHz Current - Peak Pulse (10/1000µs): 90A (8/20µs) Voltage - Reverse Standoff (Typ): 13.5V (Max) Supplier Device Package: 2-UDFN (1.6x1) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.6V Voltage - Clamping (Max) @ Ipp: 23V Power Line Protection: No |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NSPU2131MUT5G | onsemi |
Description: TVS DIODE 13.5VWM 23VC 2UDFNPackaging: Cut Tape (CT) Package / Case: 2-UDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 550pF @ 1MHz Current - Peak Pulse (10/1000µs): 90A (8/20µs) Voltage - Reverse Standoff (Typ): 13.5V (Max) Supplier Device Package: 2-UDFN (1.6x1) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.6V Voltage - Clamping (Max) @ Ipp: 23V Power Line Protection: No |
на замовлення 19546 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MMBTA55 | onsemi |
Description: TRANS PNP 60V 0.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BZX55C30 | onsemi |
Description: DIODE ZENER 30V 500MW DO35Tolerance: ±7% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 22 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
6N138SM | onsemi |
Description: OPTOISO 5KV DARL W/BASE 8-SMDPackaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.3V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 300% @ 1.6mA Supplier Device Package: 8-SMD Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 1µs, 7.3µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MC74HC541ADTG | onsemi |
Description: IC BUFFER NON-INVERT 6V 20-TSSOPPackaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-TSSOP |
на замовлення 67189 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MM74HC541SJX | onsemi |
Description: IC BUFFER NON-INVERT 6V 20-SOPPackaging: Bulk Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOP |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MM74HC541WMX | onsemi |
Description: IC BUFFER NON-INVERT 6V 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MM74HC541WMX | onsemi |
Description: IC BUFFER NON-INVERT 6V 20-SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC |
на замовлення 1227 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MC74LVX4051DTR2G-Q | onsemi |
Description: LOG CMOS MLTIPLXRPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 80MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.5V ~ 6V Charge Injection: 12pC Switch Circuit: SP8T - Open/Closed Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Grade: Automotive Number of Circuits: 1 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MC74LVX4051DTR2G-Q | onsemi |
Description: LOG CMOS MLTIPLXRPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 80MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.5V ~ 6V Charge Injection: 12pC Switch Circuit: SP8T - Open/Closed Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Grade: Automotive Number of Circuits: 1 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MC74LVXT4051DR2G | onsemi |
Description: IC MUX 8:1 26OHM 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 80MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2.5V ~ 6V Voltage - Supply, Dual (V±): ±2.5V ~ 6V Charge Injection: 12pC Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
на замовлення 65000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MC74LVXT4051DR2G | onsemi |
Description: IC MUX 8:1 26OHM 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 26Ohm -3db Bandwidth: 80MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2.5V ~ 6V Voltage - Supply, Dual (V±): ±2.5V ~ 6V Charge Injection: 12pC Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
на замовлення 67456 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NCP81520RMNTXG | onsemi |
Description: IMVP9.1 CONTROLLER Packaging: Cut Tape (CT) Package / Case: 52-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 52-QFN (6x6) |
на замовлення 4901 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NCP81520MNTXG | onsemi |
Description: IMVP9.1 CONTROLLER Packaging: Tape & Reel (TR) Package / Case: 52-VFQFN Exposed Pad Voltage - Output: Multiple Mounting Type: Surface Mount Number of Outputs: 9 Voltage - Input: 4.5V ~ 21V Applications: Controller, Intel IMVP9.1 Supplier Device Package: 52-QFN (6x6) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
NCP81520MNTXG | onsemi |
Description: IMVP9.1 CONTROLLER Packaging: Cut Tape (CT) Package / Case: 52-VFQFN Exposed Pad Voltage - Output: Multiple Mounting Type: Surface Mount Number of Outputs: 9 Voltage - Input: 4.5V ~ 21V Applications: Controller, Intel IMVP9.1 Supplier Device Package: 52-QFN (6x6) |
на замовлення 4979 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MBR20H100CT | onsemi |
Description: DIODE ARR SCHOTT 100V 10A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
| SS9014DBU |
![]() |
Виробник: onsemi
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товару немає в наявності
В кошику
од. на суму грн.
| UG3SC120009K4S |
![]() |
Виробник: onsemi
Description: 1200V/9MO,SICFET,DG,G3,TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 320mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8157 pF @ 800 V
Description: 1200V/9MO,SICFET,DG,G3,TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 320mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8157 pF @ 800 V
на замовлення 487 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4672.53 грн |
| 10+ | 3452.81 грн |
| 100+ | 3396.23 грн |
| CM1426-04CP |
![]() |
на замовлення 2098 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 956+ | 22.49 грн |
| UF4C120070B7S |
![]() |
Виробник: onsemi
Description: 1200V/70MO,SICFET,G4,TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.7A (Tj)
Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Description: 1200V/70MO,SICFET,G4,TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.7A (Tj)
Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| UF4C120070B7S |
![]() |
Виробник: onsemi
Description: 1200V/70MO,SICFET,G4,TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.7A (Tj)
Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Description: 1200V/70MO,SICFET,G4,TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.7A (Tj)
Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
на замовлення 785 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1000.18 грн |
| 10+ | 675.08 грн |
| 100+ | 598.44 грн |
| UF4C120053B7S |
![]() |
Виробник: onsemi
Description: 1200V/53MO,SICFET,G4,TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Description: 1200V/53MO,SICFET,G4,TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| UF4C120053B7S |
![]() |
Виробник: onsemi
Description: 1200V/53MO,SICFET,G4,TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Description: 1200V/53MO,SICFET,G4,TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
на замовлення 778 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1153.02 грн |
| 10+ | 784.42 грн |
| 100+ | 719.19 грн |
| UF4SC120030B7S |
![]() |
Виробник: onsemi
Description: 1200V/30MO,SICFET,G4,TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tj)
Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 800 V
Description: 1200V/30MO,SICFET,G4,TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tj)
Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 800 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 935.66 грн |
| UF4SC120030B7S |
![]() |
Виробник: onsemi
Description: 1200V/30MO,SICFET,G4,TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tj)
Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 800 V
Description: 1200V/30MO,SICFET,G4,TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tj)
Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 800 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1609.86 грн |
| 10+ | 1116.70 грн |
| 100+ | 1102.83 грн |
| UF4SC120023B7S |
![]() |
Виробник: onsemi
Description: 1200V/23MO,SICFET,G4,TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V
Description: 1200V/23MO,SICFET,G4,TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 1163.23 грн |
| UF4SC120023B7S |
![]() |
Виробник: onsemi
Description: 1200V/23MO,SICFET,G4,TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V
Description: 1200V/23MO,SICFET,G4,TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V
на замовлення 1463 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1911.34 грн |
| 10+ | 1371.03 грн |
| MOC3021FM |
![]() |
Виробник: onsemi
Description: OPTOISOLTR 7.5KV TRIAC 1CH 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Voltage - Isolation: 7500Vpk
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 7.5KV TRIAC 1CH 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Voltage - Isolation: 7500Vpk
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| CAT5401YI-50-T2 |
![]() |
Виробник: onsemi
Description: IC DGTL POT 50KOHM 64TAP 24TSSOP
Resistance (Ohms): 50k
Tolerance: ±20%
Features: Selectable Address
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 64
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 24-TSSOP
Resistance - Wiper (Ohms) (Typ): 200
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
Description: IC DGTL POT 50KOHM 64TAP 24TSSOP
Resistance (Ohms): 50k
Tolerance: ±20%
Features: Selectable Address
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 64
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 24-TSSOP
Resistance - Wiper (Ohms) (Typ): 200
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 4
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| FAN5361UMP123X |
![]() |
Виробник: onsemi
Description: IC REG BUCK 1.233V 600MA 6UMLP
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 6MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 6-UMLP (2x2)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.3V
Voltage - Output (Min/Fixed): 1.233V
Description: IC REG BUCK 1.233V 600MA 6UMLP
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 6MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 6-UMLP (2x2)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.3V
Voltage - Output (Min/Fixed): 1.233V
на замовлення 46123 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 397+ | 55.12 грн |
| FAN53611UC123X |
![]() |
Виробник: onsemi
Description: IC REG BUCK 1.233V 1A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 6MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 6-WLCSP (1.23x0.88)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.3V
Voltage - Output (Min/Fixed): 1.233V
Description: IC REG BUCK 1.233V 1A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 6MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 6-WLCSP (1.23x0.88)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.3V
Voltage - Output (Min/Fixed): 1.233V
товару немає в наявності
В кошику
од. на суму грн.
| MM74HC4020N |
![]() |
Виробник: onsemi
Description: IC BINARY COUNTER 14-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-PDIP
Voltage - Supply: 2 V ~ 6 V
Count Rate: 50 MHz
Number of Bits per Element: 14
Description: IC BINARY COUNTER 14-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-PDIP
Voltage - Supply: 2 V ~ 6 V
Count Rate: 50 MHz
Number of Bits per Element: 14
товару немає в наявності
В кошику
од. на суму грн.
| NSVBAT54M3T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.39 грн |
| NSVBAT54M3T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 12043 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.60 грн |
| 48+ | 6.79 грн |
| 100+ | 4.84 грн |
| 500+ | 3.31 грн |
| 1000+ | 2.59 грн |
| 2000+ | 2.35 грн |
| MC74ACT14DG |
![]() |
Виробник: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 11.5ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 11.5ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
на замовлення 80841 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 719+ | 30.46 грн |
| BC847AMTF |
![]() |
Виробник: onsemi
Description: TRANS NPN 45V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS NPN 45V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS4C08NTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 17A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 17A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS4C08NTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 17A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 17A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Qualification: AEC-Q101
на замовлення 4950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 130.17 грн |
| 10+ | 79.49 грн |
| 100+ | 53.36 грн |
| 500+ | 39.57 грн |
| 1000+ | 36.19 грн |
| 2000+ | 36.14 грн |
| NVTFS4C08NWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 17A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 17A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS4C08NWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 17A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 17A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS4C08NWFTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 17A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 17A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS4C08NWFTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 17A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 17A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BD135 |
![]() |
Виробник: onsemi
Description: TRANS NPN 45V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
Description: TRANS NPN 45V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
товару немає в наявності
В кошику
од. на суму грн.
| 2W04G |
![]() |
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 400V 2A WOB
Packaging: Bulk
Package / Case: 4-Circular, WOB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOB
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 2A WOB
Packaging: Bulk
Package / Case: 4-Circular, WOB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOB
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| NV25320DTHFT3G |
![]() |
Виробник: onsemi
Description: IC EEPROM 32KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 32KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 29.17 грн |
| 6000+ | 27.40 грн |
| 9000+ | 26.99 грн |
| 15000+ | 24.86 грн |
| 21000+ | 24.55 грн |
| NV25320DTHFT3G |
![]() |
Виробник: onsemi
Description: IC EEPROM 32KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 32KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 29514 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.79 грн |
| 10+ | 33.80 грн |
| 25+ | 32.93 грн |
| 50+ | 30.27 грн |
| 100+ | 29.61 грн |
| 250+ | 28.74 грн |
| 500+ | 27.61 грн |
| 1000+ | 26.96 грн |
| 1N4148WT |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 375600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.25 грн |
| 16000+ | 1.19 грн |
| 24000+ | 1.15 грн |
| 40000+ | 1.01 грн |
| 1N4148WT |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 376024 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.56 грн |
| 67+ | 4.85 грн |
| 100+ | 4.07 грн |
| 500+ | 2.77 грн |
| 1000+ | 1.88 грн |
| 2000+ | 1.75 грн |
| 1N4148WS |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 75V 150MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 75V 150MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 351170 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.76 грн |
| 6000+ | 1.40 грн |
| 9000+ | 1.32 грн |
| 15000+ | 1.15 грн |
| 1N4148WS |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 75V 150MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 75V 150MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 351904 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 8.40 грн |
| 71+ | 4.61 грн |
| 100+ | 4.43 грн |
| 500+ | 3.03 грн |
| 1000+ | 2.65 грн |
| BDW94C |
![]() |
Виробник: onsemi
Description: TRANS PNP DARL 100V 12A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
Description: TRANS PNP DARL 100V 12A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
на замовлення 5246 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 116.73 грн |
| 10+ | 71.49 грн |
| 200+ | 42.82 грн |
| 600+ | 34.35 грн |
| 1000+ | 32.14 грн |
| 2000+ | 29.56 грн |
| 5000+ | 26.32 грн |
| NVBG070N120M3S-IE |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 70MOHM M3S 1200
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 70MOHM M3S 1200
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVBG070N120M3S-IE |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 70MOHM M3S 1200
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 70MOHM M3S 1200
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVH4L070N120M3S-IE |
![]() |
Виробник: onsemi
Description: SIC MOS TO247-4L 70MOHM M3S 1200
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 70MOHM M3S 1200
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| LM431SACMFX |
![]() |
Виробник: onsemi
Description: IC VREF SHUNT ADJ 2% SOT23F-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 2% SOT23F-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.05 грн |
| LM431SACMFX |
![]() |
Виробник: onsemi
Description: IC VREF SHUNT ADJ 2% SOT23F-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 2% SOT23F-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 6324 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.96 грн |
| 31+ | 10.51 грн |
| 35+ | 9.32 грн |
| 100+ | 7.45 грн |
| 250+ | 6.85 грн |
| 500+ | 6.48 грн |
| 1000+ | 6.08 грн |
| NSPU2131MUT5G |
![]() |
Виробник: onsemi
Description: TVS DIODE 13.5VWM 23VC 2UDFN
Packaging: Tape & Reel (TR)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 550pF @ 1MHz
Current - Peak Pulse (10/1000µs): 90A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.5V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.6V
Voltage - Clamping (Max) @ Ipp: 23V
Power Line Protection: No
Description: TVS DIODE 13.5VWM 23VC 2UDFN
Packaging: Tape & Reel (TR)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 550pF @ 1MHz
Current - Peak Pulse (10/1000µs): 90A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.5V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.6V
Voltage - Clamping (Max) @ Ipp: 23V
Power Line Protection: No
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 5.09 грн |
| NSPU2131MUT5G |
![]() |
Виробник: onsemi
Description: TVS DIODE 13.5VWM 23VC 2UDFN
Packaging: Cut Tape (CT)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 550pF @ 1MHz
Current - Peak Pulse (10/1000µs): 90A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.5V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.6V
Voltage - Clamping (Max) @ Ipp: 23V
Power Line Protection: No
Description: TVS DIODE 13.5VWM 23VC 2UDFN
Packaging: Cut Tape (CT)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 550pF @ 1MHz
Current - Peak Pulse (10/1000µs): 90A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.5V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.6V
Voltage - Clamping (Max) @ Ipp: 23V
Power Line Protection: No
на замовлення 19546 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.43 грн |
| 16+ | 20.22 грн |
| 100+ | 8.18 грн |
| 500+ | 7.41 грн |
| 1000+ | 7.14 грн |
| MMBTA55 |
![]() |
Виробник: onsemi
Description: TRANS PNP 60V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Description: TRANS PNP 60V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
товару немає в наявності
В кошику
од. на суму грн.
| BZX55C30 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±7%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Description: DIODE ZENER 30V 500MW DO35
Tolerance: ±7%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
товару немає в наявності
В кошику
од. на суму грн.
| 6N138SM |
![]() |
Виробник: onsemi
Description: OPTOISO 5KV DARL W/BASE 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7.3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 5KV DARL W/BASE 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7.3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 26 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.49 грн |
| MC74HC541ADTG |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
Description: IC BUFFER NON-INVERT 6V 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
на замовлення 67189 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 572+ | 37.72 грн |
| MM74HC541SJX |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 20-SOP
Packaging: Bulk
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
Description: IC BUFFER NON-INVERT 6V 20-SOP
Packaging: Bulk
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 369+ | 58.75 грн |
| MM74HC541WMX |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 27.94 грн |
| MM74HC541WMX |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
на замовлення 1227 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.94 грн |
| 10+ | 39.71 грн |
| 25+ | 35.68 грн |
| 100+ | 29.36 грн |
| 250+ | 27.41 грн |
| 500+ | 26.22 грн |
| MC74LVX4051DTR2G-Q |
![]() |
Виробник: onsemi
Description: LOG CMOS MLTIPLXR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP8T - Open/Closed
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
Description: LOG CMOS MLTIPLXR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP8T - Open/Closed
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| MC74LVX4051DTR2G-Q |
![]() |
Виробник: onsemi
Description: LOG CMOS MLTIPLXR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP8T - Open/Closed
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
Description: LOG CMOS MLTIPLXR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP8T - Open/Closed
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| MC74LVXT4051DR2G |
![]() |
Виробник: onsemi
Description: IC MUX 8:1 26OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC MUX 8:1 26OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 27.53 грн |
| 5000+ | 25.84 грн |
| 7500+ | 25.50 грн |
| 12500+ | 23.58 грн |
| 17500+ | 23.37 грн |
| 25000+ | 23.18 грн |
| MC74LVXT4051DR2G |
![]() |
Виробник: onsemi
Description: IC MUX 8:1 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC MUX 8:1 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
на замовлення 67456 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.62 грн |
| 10+ | 40.68 грн |
| 25+ | 36.58 грн |
| 100+ | 30.14 грн |
| 250+ | 28.14 грн |
| 500+ | 26.93 грн |
| 1000+ | 26.28 грн |
| NCP81520RMNTXG |
Виробник: onsemi
Description: IMVP9.1 CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 52-QFN (6x6)
Description: IMVP9.1 CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 52-QFN (6x6)
на замовлення 4901 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 283.01 грн |
| 10+ | 175.08 грн |
| 25+ | 149.70 грн |
| 100+ | 113.52 грн |
| 250+ | 100.27 грн |
| 500+ | 92.13 грн |
| 1000+ | 83.91 грн |
| NCP81520MNTXG |
Виробник: onsemi
Description: IMVP9.1 CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 52-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 9
Voltage - Input: 4.5V ~ 21V
Applications: Controller, Intel IMVP9.1
Supplier Device Package: 52-QFN (6x6)
Description: IMVP9.1 CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 52-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 9
Voltage - Input: 4.5V ~ 21V
Applications: Controller, Intel IMVP9.1
Supplier Device Package: 52-QFN (6x6)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 81.04 грн |
| NCP81520MNTXG |
Виробник: onsemi
Description: IMVP9.1 CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 52-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 9
Voltage - Input: 4.5V ~ 21V
Applications: Controller, Intel IMVP9.1
Supplier Device Package: 52-QFN (6x6)
Description: IMVP9.1 CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 52-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 9
Voltage - Input: 4.5V ~ 21V
Applications: Controller, Intel IMVP9.1
Supplier Device Package: 52-QFN (6x6)
на замовлення 4979 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.04 грн |
| 10+ | 112.41 грн |
| 25+ | 102.51 грн |
| 100+ | 85.99 грн |
| 250+ | 81.13 грн |
| 500+ | 78.20 грн |
| 1000+ | 74.54 грн |
| MBR20H100CT |
![]() |
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
































