| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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MMBTA92LT1G | onsemi |
Description: TRANS PNP 300V 0.5A SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 300 mW |
на замовлення 33885 шт: термін постачання 21-31 дні (днів) |
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1N5402 | onsemi |
Description: DIODE STANDARD 200V 3A DO201ADPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N5402 | onsemi |
Description: DIODE STANDARD 200V 3A DO201ADPackaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S1MFL | onsemi |
Description: DIODE STANDARD 1000V 1A SOD123FPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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S1MFL | onsemi |
Description: DIODE STANDARD 1000V 1A SOD123FPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 56262 шт: термін постачання 21-31 дні (днів) |
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| LA7217MC-FH | onsemi |
Description: VIDEO ICS Packaging: Bulk |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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| LA7217MC-ZH | onsemi |
Description: VIDEO ICS Packaging: Bulk |
на замовлення 6313 шт: термін постачання 21-31 дні (днів) |
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| LA7217M-G-TLM-E | onsemi |
Description: VIDEO ICS Packaging: Bulk |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FFSD1065A | onsemi |
Description: DIODE SIL CARBIDE 650V 18A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 575pF @ 1V, 100kHz Current - Average Rectified (Io): 18A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 87500 шт: термін постачання 21-31 дні (днів) |
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FFSD1065A | onsemi |
Description: DIODE SIL CARBIDE 650V 18A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 575pF @ 1V, 100kHz Current - Average Rectified (Io): 18A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 88751 шт: термін постачання 21-31 дні (днів) |
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FFSM0465A | onsemi |
Description: DIODE SIL CARBIDE 650V 4A 4PQFNPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 247pF @ 1V, 100kHz Current - Average Rectified (Io): 4A Supplier Device Package: 4-PQFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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FFSM0465A | onsemi |
Description: DIODE SIL CARBIDE 650V 4A 4PQFNPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 247pF @ 1V, 100kHz Current - Average Rectified (Io): 4A Supplier Device Package: 4-PQFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 14882 шт: термін постачання 21-31 дні (днів) |
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FFSM1265A | onsemi |
Description: DIODE SIL CARB 650V 12.5A 4PQFNPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 665pF @ 1V, 100kHz Current - Average Rectified (Io): 12.5A Supplier Device Package: 4-PQFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FFSM1265A | onsemi |
Description: DIODE SIL CARB 650V 12.5A 4PQFNPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 665pF @ 1V, 100kHz Current - Average Rectified (Io): 12.5A Supplier Device Package: 4-PQFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 2464 шт: термін постачання 21-31 дні (днів) |
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FFSM1065A | onsemi |
Description: DIODE SIL CARBIDE 650V 11A 4PQFNPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 575pF @ 1V, 100kHz Current - Average Rectified (Io): 11A Supplier Device Package: 4-PQFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FFSM1065A | onsemi |
Description: DIODE SIL CARBIDE 650V 11A 4PQFNPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 575pF @ 1V, 100kHz Current - Average Rectified (Io): 11A Supplier Device Package: 4-PQFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 2910 шт: термін постачання 21-31 дні (днів) |
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MOC3063M | onsemi |
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIPPackaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.3V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 500µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 600V/µs Current - LED Trigger (Ift) (Max): 5mA Number of Channels: 1 Voltage - Off State: 600 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 325233 шт: термін постачання 21-31 дні (днів) |
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1N5408 | onsemi |
Description: DIODE STANDARD 1000V 3A DO201ADPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | ||||||||||||||||||
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2N5401 | onsemi |
Description: TRANS PNP 150V 0.6A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SBAV70LT3G | onsemi |
Description: DIODE ARR GP 100V 200MA SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 µA @ 70 V Qualification: AEC-Q101 |
на замовлення 152278 шт: термін постачання 21-31 дні (днів) |
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AFGBG70T65SQDC | onsemi |
Description: FS4 70A HIGH SPEED CO-PACK WITHPackaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A Supplier Device Package: D2PAK-7 IGBT Type: Field Stop Td (on/off) @ 25°C: 20ns/133.2ns Switching Energy: 300µJ (on), 220µJ (off) Test Condition: 400V, 35A, 4.7Ohm, 15V Gate Charge: 146.7 nC Grade: Automotive Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 280 A Power - Max: 617 W Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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AFGBG70T65SQDC | onsemi |
Description: FS4 70A HIGH SPEED CO-PACK WITHPackaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A Supplier Device Package: D2PAK-7 IGBT Type: Field Stop Td (on/off) @ 25°C: 20ns/133.2ns Switching Energy: 300µJ (on), 220µJ (off) Test Condition: 400V, 35A, 4.7Ohm, 15V Gate Charge: 146.7 nC Grade: Automotive Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 280 A Power - Max: 617 W Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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MM74HC74AM | onsemi |
Description: IC FF D-TYPE DOUBLE 1BIT 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 94 MHz Input Capacitance: 5 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF Number of Bits per Element: 1 |
на замовлення 14789 шт: термін постачання 21-31 дні (днів) |
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MM74HCT32N | onsemi |
Description: IC GATE OR 4CH 2-INP 14MDIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4.8mA, 4.8mA Number of Inputs: 2 Supplier Device Package: 14-MDIP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 20ns @ 5V, 15pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC847AMTF | onsemi |
Description: TRANS NPN 45V 0.1A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MPSA56 | onsemi |
Description: BJT TO92 80V PNP 0.625W 150CPackaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MPSW56 | onsemi |
Description: TRANS PNP 80V 1A TO-226-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-226-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FSGM0565RUDTU | onsemi |
Description: IC OFFLINE SW FLBACK TO220F-6LPackaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 70% Frequency - Switching: 66kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V Supplier Device Package: TO-220F-6L (U-Forming) Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V Power (Watts): 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TIP142 | onsemi |
Description: TRANS NPN DARL 100V 10A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: TO-247-3 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 125 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FSB560 | onsemi |
Description: TRANS NPN 60V 2A SOT-23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 75MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
на замовлення 30116 шт: термін постачання 21-31 дні (днів) |
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FAD1101A-F085 | onsemi |
Description: IGN GATE DRIVER IN SOIC-8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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FAD1101A-F085 | onsemi |
Description: IGN GATE DRIVER IN SOIC-8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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NCP562SQ30T1 | onsemi |
Description: IC REG LINEAR 3V 80MA SC-82ABPackaging: Bulk Package / Case: SC-82A, SOT-343 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SC-82AB Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.35V @ 80mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 6 µA |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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DM74S182N | onsemi |
Description: IC LOOK CARRY GENTR 4BIT 16-PDIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Bits: 4 Logic Type: Look-ahead Carry Generator Operating Temperature: 0°C ~ 70°C Supply Voltage: 4.75V ~ 5.25V Supplier Device Package: 16-PDIP |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
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LL4148 | onsemi |
Description: DIODE STANDARD 100V 200MA SOD80Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V |
на замовлення 2480000 шт: термін постачання 21-31 дні (днів) |
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LL4148 | onsemi |
Description: DIODE STANDARD 100V 200MA SOD80Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V |
на замовлення 2482755 шт: термін постачання 21-31 дні (днів) |
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NP3100SBT3G | onsemi |
Description: THYRISTOR 275V 80A DO-214AAPackaging: Tape & Reel (TR) Capacitance: 47pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 350V Voltage - Off State: 275V Voltage - On State: 4 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 80 A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FFSH1065B-F155 | onsemi |
Description: DIODE SIL CARB 650V 11.5A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 421pF @ 1V, 100kHz Current - Average Rectified (Io): 11.5A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 2765 шт: термін постачання 21-31 дні (днів) |
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IRLR120ATF | onsemi |
Description: MOSFET N-CH 100V 8.4A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 4.2A, 5V Power Dissipation (Max): 2.5W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74ACT244DWR2G-Q | onsemi |
Description: IC BUFF 4.5V/5.5V 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-SOIC Grade: Automotive Qualification: AEC-Q100 |
на замовлення 44000 шт: термін постачання 21-31 дні (днів) |
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MC74ACT244DWR2G-Q | onsemi |
Description: IC BUFF 4.5V/5.5V 20-SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-SOIC Grade: Automotive Qualification: AEC-Q100 |
на замовлення 44000 шт: термін постачання 21-31 дні (днів) |
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SS34 | onsemi |
Description: DIODE SCHOTTKY 40V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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SS34 | onsemi |
Description: DIODE SCHOTTKY 40V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 78412 шт: термін постачання 21-31 дні (днів) |
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NRVHP260SFT3G | onsemi |
Description: DIODE STANDARD 600V 2A SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 4.2 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 30863 шт: термін постачання 21-31 дні (днів) |
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| KAI-08051-AXA-JD-BA | onsemi |
Description: INTERLINE CCD IMAGE SENPackaging: Tray Package / Case: 68-BPGA Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.5µm x 5.5µm Active Pixel Array: 3296H x 2472V Supplier Device Package: 68-PGA (40x29) Frames per Second: 16.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| KAI-08051-AXA-JP-BA | onsemi |
Description: INTERLINE CCD IMAGE SENPackaging: Tray Package / Case: 68-BPGA Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.5µm x 5.5µm Active Pixel Array: 3296H x 2472V Supplier Device Package: 68-PGA (40x29) Frames per Second: 16.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| KAI-08051-FXA-JD-BA | onsemi |
Description: INTERLINE CCD IMAGE SENPackaging: Tray Package / Case: 68-BPGA Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.5µm x 5.5µm Active Pixel Array: 3296H x 2472V Supplier Device Package: 68-PGA (40x29) Frames per Second: 16.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| KAI-08051-QXA-JD-BA | onsemi |
Description: INTERLINE CCD IMAGE SENPackaging: Tray Package / Case: 68-BPGA Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.5µm x 5.5µm Active Pixel Array: 3296H x 2472V Supplier Device Package: 68-PGA (40x29) Frames per Second: 16.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KAI-08051-AAA-JP-BA | onsemi |
Description: IMAGE SENSOR CCD 8.1MP 67CPGAPackaging: Bulk Package / Case: 67-BCPGA Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.5µm x 5.5µm Active Pixel Array: 3296H x 2472V Supplier Device Package: 67-CPGA (33.02x20.07) Frames per Second: 16.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LA1787M-MPB-E | onsemi |
Description: RF RX AM/FM 520KHZ-1.71MHZ 64QFPPackaging: Tray Package / Case: 64-BQFP Mounting Type: Surface Mount Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz Modulation or Protocol: AM, FM Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 8V Applications: Audio Antenna Connector: PCB, Surface Mount Supplier Device Package: 64-QFP (14x14) Grade: Automotive |
на замовлення 9097 шт: термін постачання 21-31 дні (днів) |
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LA1787M-MPB-E | onsemi |
Description: RF RX AM/FM 520KHZ-1.71MHZ 64QFPPackaging: Tray Package / Case: 64-BQFP Mounting Type: Surface Mount Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz Modulation or Protocol: AM, FM Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 8V Applications: Audio Antenna Connector: PCB, Surface Mount Supplier Device Package: 64-QFP (14x14) Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC595ADR2G | onsemi |
Description: IC SR TRI-STATE 8BIT 16-SOICPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel, Serial Logic Type: Shift Register Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-SOIC Number of Bits per Element: 8 |
на замовлення 283581 шт: термін постачання 21-31 дні (днів) |
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NCP167AMX300TBG | onsemi |
Description: IC REG LINEAR 3V 700MA 4-XDFNPackaging: Bulk Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 700mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 18 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 85dB ~ 63dB (100Hz ~ 100kHz) Protection Features: Over Current, Over Temperature, Soft Start |
на замовлення 1834 шт: термін постачання 21-31 дні (днів) |
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BC559 | onsemi |
Description: TRANS PNP 30V 0.1A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84B27LT1G | onsemi |
Description: DIODE ZENER 27V 250MW SOT23-3Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84B27LT1G | onsemi |
Description: DIODE ZENER 27V 250MW SOT23-3Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V Qualification: AEC-Q101 |
на замовлення 2965 шт: термін постачання 21-31 дні (днів) |
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1N5341B | onsemi |
Description: DIODE ZENER 6.2V 5W AXIALPackaging: Bulk Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
| OPB705 | onsemi |
Description: SENSOR OPT SLOT PCB MOUNTPackage / Case: PCB Mount Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||||||||
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TL082CD | onsemi |
Description: IC OPAMP JFET 2 CIRCUIT 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: J-FET Operating Temperature: 0°C ~ 70°C Current - Supply: 1.4mA (x2 Channels) Slew Rate: 13V/µs Gain Bandwidth Product: 3 MHz Current - Input Bias: 30 pA Voltage - Input Offset: 3 mV Supplier Device Package: 8-SOIC Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 10 mA Voltage - Supply Span (Min): 10 V Voltage - Supply Span (Max): 30 V Qualification: AEC-Q100 |
на замовлення 82715 шт: термін постачання 21-31 дні (днів) |
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SBAT54AWT1G | onsemi |
Description: DIODE ARR SCHOTT 30V 200MA SC703Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 19000 шт: термін постачання 21-31 дні (днів) |
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| MMBTA92LT1G |
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Виробник: onsemi
Description: TRANS PNP 300V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 300 mW
Description: TRANS PNP 300V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 300 mW
на замовлення 33885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4771+ | 4.04 грн |
| 1N5402 |
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Виробник: onsemi
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику
од. на суму грн.
| 1N5402 |
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Виробник: onsemi
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| S1MFL |
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Виробник: onsemi
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.14 грн |
| 6000+ | 4.46 грн |
| S1MFL |
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Виробник: onsemi
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 56262 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.92 грн |
| 20+ | 15.43 грн |
| 100+ | 9.68 грн |
| 500+ | 6.74 грн |
| 1000+ | 5.98 грн |
| LA7217MC-FH |
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 180+ | 110.83 грн |
| LA7217MC-ZH |
на замовлення 6313 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 180+ | 110.83 грн |
| LA7217M-G-TLM-E |
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 180+ | 110.83 грн |
| FFSD1065A |
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Виробник: onsemi
Description: DIODE SIL CARBIDE 650V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 87500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 106.87 грн |
| 5000+ | 101.81 грн |
| FFSD1065A |
![]() |
Виробник: onsemi
Description: DIODE SIL CARBIDE 650V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 88751 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 323.65 грн |
| 10+ | 205.83 грн |
| 100+ | 145.73 грн |
| 500+ | 116.95 грн |
| FFSM0465A |
![]() |
Виробник: onsemi
Description: DIODE SIL CARBIDE 650V 4A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 247pF @ 1V, 100kHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 247pF @ 1V, 100kHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 91.21 грн |
| 6000+ | 86.64 грн |
| FFSM0465A |
![]() |
Виробник: onsemi
Description: DIODE SIL CARBIDE 650V 4A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 247pF @ 1V, 100kHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 247pF @ 1V, 100kHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 14882 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 286.73 грн |
| 10+ | 181.70 грн |
| 100+ | 127.69 грн |
| 500+ | 99.52 грн |
| FFSM1265A |
![]() |
Виробник: onsemi
Description: DIODE SIL CARB 650V 12.5A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 665pF @ 1V, 100kHz
Current - Average Rectified (Io): 12.5A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 12.5A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 665pF @ 1V, 100kHz
Current - Average Rectified (Io): 12.5A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FFSM1265A |
![]() |
Виробник: onsemi
Description: DIODE SIL CARB 650V 12.5A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 665pF @ 1V, 100kHz
Current - Average Rectified (Io): 12.5A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 12.5A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 665pF @ 1V, 100kHz
Current - Average Rectified (Io): 12.5A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 2464 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 330.72 грн |
| 10+ | 210.52 грн |
| 100+ | 149.23 грн |
| 500+ | 120.38 грн |
| FFSM1065A |
![]() |
Виробник: onsemi
Description: DIODE SIL CARBIDE 650V 11A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 11A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FFSM1065A |
![]() |
Виробник: onsemi
Description: DIODE SIL CARBIDE 650V 11A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 11A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 11A
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 2910 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 385.71 грн |
| 10+ | 247.36 грн |
| 100+ | 177.00 грн |
| 500+ | 148.04 грн |
| MOC3063M |
![]() |
Виробник: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 500µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 600V/µs
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 500µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 600V/µs
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 325233 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 568+ | 35.67 грн |
| 1N5408 |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 1000V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику
од. на суму грн.
| 2N5401 |
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Виробник: onsemi
Description: TRANS PNP 150V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Description: TRANS PNP 150V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| SBAV70LT3G |
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Виробник: onsemi
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
Qualification: AEC-Q101
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
Qualification: AEC-Q101
на замовлення 152278 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12308+ | 1.35 грн |
| AFGBG70T65SQDC |
![]() |
Виробник: onsemi
Description: FS4 70A HIGH SPEED CO-PACK WITH
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
Supplier Device Package: D2PAK-7
IGBT Type: Field Stop
Td (on/off) @ 25°C: 20ns/133.2ns
Switching Energy: 300µJ (on), 220µJ (off)
Test Condition: 400V, 35A, 4.7Ohm, 15V
Gate Charge: 146.7 nC
Grade: Automotive
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 617 W
Qualification: AEC-Q101
Description: FS4 70A HIGH SPEED CO-PACK WITH
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
Supplier Device Package: D2PAK-7
IGBT Type: Field Stop
Td (on/off) @ 25°C: 20ns/133.2ns
Switching Energy: 300µJ (on), 220µJ (off)
Test Condition: 400V, 35A, 4.7Ohm, 15V
Gate Charge: 146.7 nC
Grade: Automotive
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 617 W
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 289.59 грн |
| AFGBG70T65SQDC |
![]() |
Виробник: onsemi
Description: FS4 70A HIGH SPEED CO-PACK WITH
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
Supplier Device Package: D2PAK-7
IGBT Type: Field Stop
Td (on/off) @ 25°C: 20ns/133.2ns
Switching Energy: 300µJ (on), 220µJ (off)
Test Condition: 400V, 35A, 4.7Ohm, 15V
Gate Charge: 146.7 nC
Grade: Automotive
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 617 W
Qualification: AEC-Q101
Description: FS4 70A HIGH SPEED CO-PACK WITH
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
Supplier Device Package: D2PAK-7
IGBT Type: Field Stop
Td (on/off) @ 25°C: 20ns/133.2ns
Switching Energy: 300µJ (on), 220µJ (off)
Test Condition: 400V, 35A, 4.7Ohm, 15V
Gate Charge: 146.7 nC
Grade: Automotive
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 617 W
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 670.08 грн |
| 10+ | 443.14 грн |
| 100+ | 341.33 грн |
| MM74HC74AM |
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Виробник: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 94 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 94 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Bits per Element: 1
на замовлення 14789 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.71 грн |
| 12+ | 25.49 грн |
| 55+ | 21.04 грн |
| 110+ | 18.53 грн |
| 275+ | 17.24 грн |
| 550+ | 16.47 грн |
| 1045+ | 15.61 грн |
| 2530+ | 14.96 грн |
| 5005+ | 14.56 грн |
| MM74HCT32N |
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Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 15pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 15pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| BC847AMTF |
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Виробник: onsemi
Description: TRANS NPN 45V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS NPN 45V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
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| MPSW56 |
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Виробник: onsemi
Description: TRANS PNP 80V 1A TO-226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-226-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 1A TO-226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-226-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товару немає в наявності
Мінімальне замовлення: 1500 шт
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| FSGM0565RUDTU |
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Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 70%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: TO-220F-6L (U-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Power (Watts): 80 W
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 70%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: TO-220F-6L (U-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Power (Watts): 80 W
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| TIP142 |
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Виробник: onsemi
Description: TRANS NPN DARL 100V 10A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
Description: TRANS NPN DARL 100V 10A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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| FSB560 |
![]() |
Виробник: onsemi
Description: TRANS NPN 60V 2A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS NPN 60V 2A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
на замовлення 30116 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1322+ | 15.48 грн |
| FAD1101A-F085 |
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Виробник: onsemi
Description: IGN GATE DRIVER IN SOIC-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Description: IGN GATE DRIVER IN SOIC-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 57.73 грн |
| 5000+ | 54.37 грн |
| FAD1101A-F085 |
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Виробник: onsemi
Description: IGN GATE DRIVER IN SOIC-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Description: IGN GATE DRIVER IN SOIC-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 117.83 грн |
| 10+ | 83.67 грн |
| 25+ | 76.07 грн |
| 100+ | 63.54 грн |
| 250+ | 59.80 грн |
| 500+ | 57.55 грн |
| 1000+ | 56.37 грн |
| NCP562SQ30T1 |
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Виробник: onsemi
Description: IC REG LINEAR 3V 80MA SC-82AB
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SC-82AB
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.35V @ 80mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 µA
Description: IC REG LINEAR 3V 80MA SC-82AB
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SC-82AB
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.35V @ 80mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 µA
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1514+ | 13.35 грн |
| DM74S182N |
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Виробник: onsemi
Description: IC LOOK CARRY GENTR 4BIT 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Bits: 4
Logic Type: Look-ahead Carry Generator
Operating Temperature: 0°C ~ 70°C
Supply Voltage: 4.75V ~ 5.25V
Supplier Device Package: 16-PDIP
Description: IC LOOK CARRY GENTR 4BIT 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Bits: 4
Logic Type: Look-ahead Carry Generator
Operating Temperature: 0°C ~ 70°C
Supply Voltage: 4.75V ~ 5.25V
Supplier Device Package: 16-PDIP
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| LL4148 |
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Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Description: DIODE STANDARD 100V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
на замовлення 2480000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 1.52 грн |
| 5000+ | 1.29 грн |
| LL4148 |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Description: DIODE STANDARD 100V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
на замовлення 2482755 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 40+ | 7.86 грн |
| 63+ | 4.84 грн |
| 102+ | 2.98 грн |
| 500+ | 2.02 грн |
| 1000+ | 1.76 грн |
| NP3100SBT3G |
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Виробник: onsemi
Description: THYRISTOR 275V 80A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 47pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 350V
Voltage - Off State: 275V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Description: THYRISTOR 275V 80A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 47pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 350V
Voltage - Off State: 275V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FFSH1065B-F155 |
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Виробник: onsemi
Description: DIODE SIL CARB 650V 11.5A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 11.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 11.5A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 11.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 2765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 215.24 грн |
| 10+ | 134.12 грн |
| 450+ | 75.85 грн |
| 900+ | 65.69 грн |
| 1350+ | 62.90 грн |
| 2250+ | 59.76 грн |
| IRLR120ATF |
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Виробник: onsemi
Description: MOSFET N-CH 100V 8.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 4.2A, 5V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 100V 8.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 4.2A, 5V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| MC74ACT244DWR2G-Q |
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Виробник: onsemi
Description: IC BUFF 4.5V/5.5V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFF 4.5V/5.5V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 44000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1000+ | 21.85 грн |
| 2000+ | 20.36 грн |
| MC74ACT244DWR2G-Q |
![]() |
Виробник: onsemi
Description: IC BUFF 4.5V/5.5V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFF 4.5V/5.5V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 44000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.35 грн |
| 10+ | 31.32 грн |
| 25+ | 28.11 грн |
| 100+ | 23.06 грн |
| 250+ | 21.48 грн |
| 500+ | 20.53 грн |
| SS34 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 15.34 грн |
| 6000+ | 13.60 грн |
| SS34 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 78412 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 68.34 грн |
| 10+ | 40.92 грн |
| 100+ | 26.62 грн |
| 500+ | 19.20 грн |
| 1000+ | 17.34 грн |
| NRVHP260SFT3G |
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Виробник: onsemi
Description: DIODE STANDARD 600V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4.2 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4.2 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
на замовлення 30863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 51.85 грн |
| 10+ | 31.09 грн |
| 100+ | 20.02 грн |
| 500+ | 14.29 грн |
| 1000+ | 12.84 грн |
| 2000+ | 11.62 грн |
| 5000+ | 10.13 грн |
| KAI-08051-AXA-JD-BA |
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Виробник: onsemi
Description: INTERLINE CCD IMAGE SEN
Packaging: Tray
Package / Case: 68-BPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 3296H x 2472V
Supplier Device Package: 68-PGA (40x29)
Frames per Second: 16.0
Description: INTERLINE CCD IMAGE SEN
Packaging: Tray
Package / Case: 68-BPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 3296H x 2472V
Supplier Device Package: 68-PGA (40x29)
Frames per Second: 16.0
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| KAI-08051-AXA-JP-BA |
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Виробник: onsemi
Description: INTERLINE CCD IMAGE SEN
Packaging: Tray
Package / Case: 68-BPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 3296H x 2472V
Supplier Device Package: 68-PGA (40x29)
Frames per Second: 16.0
Description: INTERLINE CCD IMAGE SEN
Packaging: Tray
Package / Case: 68-BPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 3296H x 2472V
Supplier Device Package: 68-PGA (40x29)
Frames per Second: 16.0
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| KAI-08051-FXA-JD-BA |
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Виробник: onsemi
Description: INTERLINE CCD IMAGE SEN
Packaging: Tray
Package / Case: 68-BPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 3296H x 2472V
Supplier Device Package: 68-PGA (40x29)
Frames per Second: 16.0
Description: INTERLINE CCD IMAGE SEN
Packaging: Tray
Package / Case: 68-BPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 3296H x 2472V
Supplier Device Package: 68-PGA (40x29)
Frames per Second: 16.0
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| KAI-08051-QXA-JD-BA |
![]() |
Виробник: onsemi
Description: INTERLINE CCD IMAGE SEN
Packaging: Tray
Package / Case: 68-BPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 3296H x 2472V
Supplier Device Package: 68-PGA (40x29)
Frames per Second: 16.0
Description: INTERLINE CCD IMAGE SEN
Packaging: Tray
Package / Case: 68-BPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 3296H x 2472V
Supplier Device Package: 68-PGA (40x29)
Frames per Second: 16.0
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| KAI-08051-AAA-JP-BA |
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Виробник: onsemi
Description: IMAGE SENSOR CCD 8.1MP 67CPGA
Packaging: Bulk
Package / Case: 67-BCPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 3296H x 2472V
Supplier Device Package: 67-CPGA (33.02x20.07)
Frames per Second: 16.0
Description: IMAGE SENSOR CCD 8.1MP 67CPGA
Packaging: Bulk
Package / Case: 67-BCPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 3296H x 2472V
Supplier Device Package: 67-CPGA (33.02x20.07)
Frames per Second: 16.0
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| LA1787M-MPB-E |
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Виробник: onsemi
Description: RF RX AM/FM 520KHZ-1.71MHZ 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 8V
Applications: Audio
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 64-QFP (14x14)
Grade: Automotive
Description: RF RX AM/FM 520KHZ-1.71MHZ 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 8V
Applications: Audio
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 64-QFP (14x14)
Grade: Automotive
на замовлення 9097 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 114+ | 175.59 грн |
| LA1787M-MPB-E |
![]() |
Виробник: onsemi
Description: RF RX AM/FM 520KHZ-1.71MHZ 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 8V
Applications: Audio
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 64-QFP (14x14)
Grade: Automotive
Description: RF RX AM/FM 520KHZ-1.71MHZ 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 8V
Applications: Audio
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 64-QFP (14x14)
Grade: Automotive
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од. на суму грн.
| MC74HC595ADR2G |
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Виробник: onsemi
Description: IC SR TRI-STATE 8BIT 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
Description: IC SR TRI-STATE 8BIT 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
на замовлення 283581 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1285+ | 15.48 грн |
| NCP167AMX300TBG |
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Виробник: onsemi
Description: IC REG LINEAR 3V 700MA 4-XDFN
Packaging: Bulk
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 18 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 85dB ~ 63dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LINEAR 3V 700MA 4-XDFN
Packaging: Bulk
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 18 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 85dB ~ 63dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature, Soft Start
на замовлення 1834 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1122+ | 18.03 грн |
| BC559 |
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Виробник: onsemi
Description: TRANS PNP 30V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS PNP 30V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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| SZBZX84B27LT1G |
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Виробник: onsemi
Description: DIODE ZENER 27V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Qualification: AEC-Q101
Description: DIODE ZENER 27V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| SZBZX84B27LT1G |
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Виробник: onsemi
Description: DIODE ZENER 27V 250MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Qualification: AEC-Q101
Description: DIODE ZENER 27V 250MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Qualification: AEC-Q101
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.71 грн |
| 34+ | 9.00 грн |
| 100+ | 5.59 грн |
| 500+ | 3.83 грн |
| 1000+ | 3.37 грн |
| 1N5341B |
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Виробник: onsemi
Description: DIODE ZENER 6.2V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: DIODE ZENER 6.2V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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од. на суму грн.
| OPB705 |
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Виробник: onsemi
Description: SENSOR OPT SLOT PCB MOUNT
Package / Case: PCB Mount
Mounting Type: Through Hole
Description: SENSOR OPT SLOT PCB MOUNT
Package / Case: PCB Mount
Mounting Type: Through Hole
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| TL082CD |
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Виробник: onsemi
Description: IC OPAMP JFET 2 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.4mA (x2 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 30 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 10 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Qualification: AEC-Q100
Description: IC OPAMP JFET 2 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.4mA (x2 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 30 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 10 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Qualification: AEC-Q100
на замовлення 82715 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 503+ | 40.38 грн |
| SBAT54AWT1G |
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Виробник: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SC703
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOTT 30V 200MA SC703
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2817+ | 7.34 грн |



































