Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BZX79C3V3-T50A | onsemi |
![]() Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FQPF2N60C | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V Power Dissipation (Max): 23W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF30N06 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 10.5A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MR754 | onsemi |
![]() Packaging: Bulk Package / Case: Button, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: Microde Button Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOC3021FM | onsemi |
![]() Packaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Voltage - Isolation: 7500Vpk Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 15mA Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SC3150M | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 50 W |
на замовлення 7826 шт: термін постачання 21-31 дні (днів) |
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GBPC2501 | onsemi |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 339 шт: термін постачання 21-31 дні (днів) |
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1N5340B | onsemi |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 6 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMUN5111T1 | onsemi |
![]() Packaging: Bulk |
на замовлення 102000 шт: термін постачання 21-31 дні (днів) |
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MMBT5551 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMBT5551 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMBT5551 | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 350 mW |
на замовлення 398408 шт: термін постачання 21-31 дні (днів) |
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FFPF20U60DNTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Avalanche Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220F-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMBZ5257ELT1G | onsemi |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
на замовлення 99416 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ5257ELT1G | onsemi |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V Qualification: AEC-Q101 |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ5257ELT1G | onsemi |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V Qualification: AEC-Q101 |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ5257ELT1G | onsemi |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V Qualification: AEC-Q101 |
на замовлення 103043 шт: термін постачання 21-31 дні (днів) |
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MMBZ5257B | onsemi |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMBZ5257B | onsemi |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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LM348N | onsemi |
![]() Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: General Purpose Operating Temperature: 0°C ~ 70°C Current - Supply: 2.4mA Slew Rate: 0.5V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 30 nA Voltage - Input Offset: 1 mV Supplier Device Package: 14-MDIP Number of Circuits: 4 Current - Output / Channel: 25 mA Voltage - Supply Span (Min): 36 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
TIP33AG | onsemi |
![]() Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: SOT-93 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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ES1JFL | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V |
на замовлення 1509000 шт: термін постачання 21-31 дні (днів) |
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ES1JFL | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V |
на замовлення 1510249 шт: термін постачання 21-31 дні (днів) |
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AR0330CM1C12SHAA0-DP | onsemi |
![]() Packaging: Bulk Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1536V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 1082 шт: термін постачання 21-31 дні (днів) |
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AR0330SR1C00SUKA0-CR | onsemi |
![]() Packaging: Bulk Package / Case: 64-VFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2048H x 1536V Supplier Device Package: 64-CSP (6.28x6.65) Frames per Second: 30.0 |
на замовлення 190409 шт: термін постачання 21-31 дні (днів) |
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AR0330SR1C00SUKA0-CR | onsemi |
![]() Packaging: Tray Package / Case: 64-VFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2048H x 1536V Supplier Device Package: 64-CSP (6.28x6.65) Frames per Second: 30.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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AR0330CM1C00SHAA0-DR | onsemi |
![]() Packaging: Bulk Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1536V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 48346 шт: термін постачання 21-31 дні (днів) |
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AR0330CM1C12SHAA0-DR1 | onsemi |
![]() Packaging: Bulk Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V, 2.8V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1296V Frames per Second: 60.0 |
на замовлення 13193 шт: термін постачання 21-31 дні (днів) |
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AR0330CM1C12SHAA0-DR1 | onsemi |
![]() Packaging: Tray Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V, 2.8V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1296V Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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AR0330CM1C00SHAA0-DP | onsemi |
![]() Packaging: Bulk Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1536V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 1710 шт: термін постачання 21-31 дні (днів) |
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AR0330CM1C00SHAA0-DP | onsemi |
![]() Packaging: Tray Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1536V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AR0330CM1C00SHAA0-DR1 | onsemi |
![]() Packaging: Bulk Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V, 2.8V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1296V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 2010 шт: термін постачання 21-31 дні (днів) |
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AR0330CM1C00SHAA0-DR1 | onsemi |
![]() Packaging: Tray Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V, 2.8V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1296V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF5N50CFTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6505TG | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 60Hz Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.8 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 100 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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7WBD383AMX1TCG | onsemi |
![]() Packaging: Bulk Package / Case: 8-XFLGA Mounting Type: Surface Mount Circuit: 2 x 1:1 Type: Bus FET Exchange Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 8-ULLGA (1.95x1) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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7WBD383CMX1TCG | onsemi |
![]() Packaging: Bulk Package / Case: 8-XFLGA Mounting Type: Surface Mount Circuit: 2 x 1:1 Type: Bus FET Exchange Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 8-ULLGA (1.45x1) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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7WBD383BMX1TCG | onsemi |
![]() Packaging: Bulk Package / Case: 8-XFLGA Mounting Type: Surface Mount Circuit: 2 x 1:1 Type: Bus FET Exchange Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 8-ULLGA (1.6x1) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7WBD383MUTAG | onsemi |
![]() Packaging: Bulk Package / Case: 8-UFDFN Mounting Type: Surface Mount Circuit: 2 x 1:1 Type: Bus FET Exchange Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 8-UDFN (1.8x1.2) |
на замовлення 39638 шт: термін постачання 21-31 дні (днів) |
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7WBD383AMUTCG | onsemi |
![]() Packaging: Bulk Package / Case: 8-UFQFN Mounting Type: Surface Mount Circuit: 2 x 1:1 Type: Bus FET Exchange Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 8-UQFN (1.6x1.6) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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BC547B | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
на замовлення 394 шт: термін постачання 21-31 дні (днів) |
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NCV317BD2TR4G | onsemi |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -55°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: D2PAK-3 Voltage - Output (Max): 37V Voltage - Output (Min/Fixed): 1.2V Grade: Automotive PSRR: 80dB ~ 65dB (120Hz) Protection Features: Over Current, Over Temperature, Short Circuit Qualification: AEC-Q100 |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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FCH104N60 | onsemi |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 380 V |
на замовлення 347 шт: термін постачання 21-31 дні (днів) |
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HBL1025T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Voltage: 11.5V Mounting Type: Surface Mount Applications: LED Protection Technology: LED Shunt Supplier Device Package: 5-TSOP Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HBL1025T1G | onsemi |
![]() Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Voltage: 11.5V Mounting Type: Surface Mount Applications: LED Protection Technology: LED Shunt Supplier Device Package: 5-TSOP Number of Circuits: 1 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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HBL1015T1G | onsemi |
![]() Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Voltage: 8V Mounting Type: Surface Mount Applications: LED Protection Technology: LED Shunt Supplier Device Package: 5-TSOP Number of Circuits: 1 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDPC1012S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta), 900mW (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V, 3456pF @ 13V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA Supplier Device Package: Powerclip-33 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BC640 | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 150MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MUR120 | onsemi |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
на замовлення 24190 шт: термін постачання 21-31 дні (днів) |
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N24C256X-1CBT5G | onsemi |
Description: 256 KB I2C CMOS SERIAL EEPROM WI Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (1x1) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 32K x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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N24C256X-1CBT5G | onsemi |
Description: 256 KB I2C CMOS SERIAL EEPROM WI Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (1x1) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 32K x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FSFR1700HS | onsemi |
![]() Packaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 600kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Power (Watts): 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FSFR1700HSL | onsemi |
![]() Packaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 600kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP (L forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Power (Watts): 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FSFR1700 | onsemi |
![]() Packaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V Supplier Device Package: 9-SIP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 14.5 V Control Features: EN, Frequency Control Power (Watts): 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FSFR1700US | onsemi |
![]() Packaging: Tube Package / Case: 10-SSIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Power (Watts): 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FSFR1700USL | onsemi |
![]() Packaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP (L forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Power (Watts): 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FCH125N60E | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SS9015CBU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Frequency - Transition: 190MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 450 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DM74AS30MX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 2mA, 20mA Number of Inputs: 8 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MT9P031I12STM-DR1 | onsemi |
![]() Packaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2592H x 1944V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 53.0 |
товару немає в наявності |
В кошику од. на суму грн. |
BZX79C3V3-T50A |
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Виробник: onsemi
Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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5000+ | 1.56 грн |
FQPF2N60C |
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Виробник: onsemi
Description: MOSFET N-CH 600V 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Description: MOSFET N-CH 600V 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
FQPF30N06 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 21A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 10.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
Description: MOSFET N-CH 60V 21A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 10.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
MR754 |
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Виробник: onsemi
Description: DIODE STD 400V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE STD 400V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
MOC3021FM |
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Виробник: onsemi
Description: OPTOISOLTR 7.5KV TRIAC 1CH 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Voltage - Isolation: 7500Vpk
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 7.5KV TRIAC 1CH 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Voltage - Isolation: 7500Vpk
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
2SC3150M |
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Виробник: onsemi
Description: TRANS NPN 800V 3A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
Description: TRANS NPN 800V 3A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
на замовлення 7826 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
607+ | 34.68 грн |
GBPC2501 |
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Виробник: onsemi
Description: BRIDGE RECT 1PHASE 100V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 339 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 523.22 грн |
50+ | 271.39 грн |
100+ | 249.01 грн |
1N5340B |
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Виробник: onsemi
Description: DIODE ZENER 6V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: DIODE ZENER 6V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
товару немає в наявності
В кошику
од. на суму грн.
SMUN5111T1 |
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на замовлення 102000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3122+ | 7.42 грн |
MMBT5551 |
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Виробник: onsemi
Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
товару немає в наявності
В кошику
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MMBT5551 |
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Виробник: onsemi
Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
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MMBT5551 |
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Виробник: onsemi
Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
на замовлення 398408 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6935+ | 2.82 грн |
FFPF20U60DNTU |
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Виробник: onsemi
Description: DIODE ARR AVAL 600V 20A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARR AVAL 600V 20A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MMBZ5257ELT1G |
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Виробник: onsemi
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
на замовлення 99416 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5453+ | 4.25 грн |
SZMMBZ5257ELT1G |
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Виробник: onsemi
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.06 грн |
6000+ | 3.31 грн |
9000+ | 2.66 грн |
15000+ | 2.43 грн |
21000+ | 2.27 грн |
30000+ | 2.14 грн |
SZMMBZ5257ELT1G |
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Виробник: onsemi
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.12 грн |
SZMMBZ5257ELT1G |
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Виробник: onsemi
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
на замовлення 103043 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6411+ | 3.54 грн |
MMBZ5257B |
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Виробник: onsemi
Description: DIODE ZENER 33V 350MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE ZENER 33V 350MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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MMBZ5257B |
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Виробник: onsemi
Description: DIODE ZENER 33V 350MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE ZENER 33V 350MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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LM348N |
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Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 2.4mA
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 30 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-MDIP
Number of Circuits: 4
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 4 CIRCUIT 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 2.4mA
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 30 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-MDIP
Number of Circuits: 4
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
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TIP33AG |
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Виробник: onsemi
Description: TRANS NPN 60V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 80 W
Description: TRANS NPN 60V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 80 W
товару немає в наявності
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од. на суму грн.
ES1JFL |
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Виробник: onsemi
Description: DIODE STANDARD 600V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Description: DIODE STANDARD 600V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
на замовлення 1509000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.93 грн |
6000+ | 7.29 грн |
15000+ | 6.81 грн |
21000+ | 6.79 грн |
75000+ | 6.57 грн |
ES1JFL |
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Виробник: onsemi
Description: DIODE STANDARD 600V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Description: DIODE STANDARD 600V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
на замовлення 1510249 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.76 грн |
15+ | 21.08 грн |
100+ | 16.69 грн |
500+ | 11.84 грн |
1000+ | 10.61 грн |
AR0330CM1C12SHAA0-DP |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 1082 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
38+ | 569.72 грн |
AR0330SR1C00SUKA0-CR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Bulk
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 30.0
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Bulk
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 30.0
на замовлення 190409 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
34+ | 631.28 грн |
AR0330SR1C00SUKA0-CR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 30.0
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 30.0
товару немає в наявності
В кошику
од. на суму грн.
AR0330CM1C00SHAA0-DR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 48346 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 883.94 грн |
AR0330CM1C12SHAA0-DR1 |
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Виробник: onsemi
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Bulk
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Frames per Second: 60.0
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Bulk
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Frames per Second: 60.0
на замовлення 13193 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 915.07 грн |
AR0330CM1C12SHAA0-DR1 |
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Виробник: onsemi
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Frames per Second: 60.0
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Frames per Second: 60.0
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AR0330CM1C00SHAA0-DP |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 1710 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 948.34 грн |
AR0330CM1C00SHAA0-DP |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
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AR0330CM1C00SHAA0-DR1 |
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Виробник: onsemi
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 2010 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 1113.94 грн |
AR0330CM1C00SHAA0-DR1 |
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Виробник: onsemi
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
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FQPF5N50CFTU |
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Виробник: onsemi
Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
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2N6505TG |
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Виробник: onsemi
Description: SILICON CONTROLLED RECTIFIER, 25
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 60Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 100 V
Description: SILICON CONTROLLED RECTIFIER, 25
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 60Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 100 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
326+ | 65.11 грн |
7WBD383AMX1TCG |
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Виробник: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1366+ | 15.57 грн |
7WBD383CMX1TCG |
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Виробник: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.45x1)
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.45x1)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1366+ | 15.57 грн |
7WBD383BMX1TCG |
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Виробник: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.6x1)
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.6x1)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1366+ | 15.57 грн |
7WBD383MUTAG |
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Виробник: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
Description: IC BUS FET EXCH SW 2X1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
на замовлення 39638 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
892+ | 24.06 грн |
7WBD383AMUTCG |
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Виробник: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-UQFN
Packaging: Bulk
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UQFN (1.6x1.6)
Description: IC BUS FET EXCH SW 2X1:1 8-UQFN
Packaging: Bulk
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UQFN (1.6x1.6)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
892+ | 24.06 грн |
BC547B |
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Виробник: onsemi
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 394 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 26.56 грн |
20+ | 15.89 грн |
100+ | 9.99 грн |
NCV317BD2TR4G |
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Виробник: onsemi
Description: IC REG LIN POS ADJ 1.5A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
PSRR: 80dB ~ 65dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 1.5A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
PSRR: 80dB ~ 65dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
680+ | 31.14 грн |
FCH104N60 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 380 V
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 380 V
на замовлення 347 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
121+ | 176.22 грн |
HBL1025T1G |
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Виробник: onsemi
Description: LGHT PROTECT LED SHUNT 11.5V SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 11.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
Description: LGHT PROTECT LED SHUNT 11.5V SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 11.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
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HBL1025T1G |
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Виробник: onsemi
Description: LGHT PROTECT LED SHUNT 11.5V SMD
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 11.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
Description: LGHT PROTECT LED SHUNT 11.5V SMD
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 11.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1680+ | 12.74 грн |
HBL1015T1G |
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Виробник: onsemi
Description: LIGHT PROTECT LED SHUNT 8V SMD
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 8V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
Description: LIGHT PROTECT LED SHUNT 8V SMD
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 8V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1680+ | 12.74 грн |
FDPC1012S |
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Виробник: onsemi
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta), 900mW (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V, 3456pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: Powerclip-33
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta), 900mW (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V, 3456pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: Powerclip-33
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BC640 |
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Виробник: onsemi
Description: TRANS PNP 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Description: TRANS PNP 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MUR120 |
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Виробник: onsemi
Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 24190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3122+ | 7.08 грн |
N24C256X-1CBT5G |
Виробник: onsemi
Description: 256 KB I2C CMOS SERIAL EEPROM WI
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (1x1)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
Description: 256 KB I2C CMOS SERIAL EEPROM WI
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (1x1)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
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N24C256X-1CBT5G |
Виробник: onsemi
Description: 256 KB I2C CMOS SERIAL EEPROM WI
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (1x1)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
Description: 256 KB I2C CMOS SERIAL EEPROM WI
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (1x1)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
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FSFR1700HS |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 600kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 600kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
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FSFR1700HSL |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 600kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 600kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
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FSFR1700 |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Control Features: EN, Frequency Control
Power (Watts): 200 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Control Features: EN, Frequency Control
Power (Watts): 200 W
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FSFR1700US |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
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FSFR1700USL |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
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FCH125N60E |
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Виробник: onsemi
Description: MOSFET N-CH 600V 29A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V
Description: MOSFET N-CH 600V 29A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V
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SS9015CBU |
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Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
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DM74AS30MX |
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Виробник: onsemi
Description: IC GATE NAND 1CH 8-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 8
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
Description: IC GATE NAND 1CH 8-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 8
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
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MT9P031I12STM-DR1 |
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Виробник: onsemi
Description: SENSOR IMAGE 5MP MONO CMOS 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 53.0
Description: SENSOR IMAGE 5MP MONO CMOS 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 53.0
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