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SZNZ8F5V1MX2WT5G SZNZ8F5V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
на замовлення 136000 шт:
термін постачання 21-31 дні (днів)
8000+4.29 грн
16000+4.09 грн
24000+3.98 грн
40000+3.45 грн
56000+3.11 грн
80000+3.02 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
SZNZ8F5V1MX2WT5G SZNZ8F5V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
на замовлення 136000 шт:
термін постачання 21-31 дні (днів)
14+25.67 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
AR0145CS1C00SMKA0-CP-E AR0145CS1C00SMKA0-CP-E onsemi ar0145cs-pd-d.pdf Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Packaging: Tray
Package / Case: 47-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 2.8µm x 2.8µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 47-ODCSP (5.74x4.42)
Frames per Second: 120.0
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+2945.19 грн
10+2312.39 грн
25+2181.68 грн
В кошику  од. на суму  грн.
AR0145CS1C28SMKA0-CP-E AR0145CS1C28SMKA0-CP-E onsemi ar0145cs-pd-d.pdf Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Packaging: Tray
Package / Case: 47-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 2.8µm x 2.8µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 47-ODCSP (5.74x4.42)
Frames per Second: 120.0
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+2945.19 грн
10+2312.39 грн
25+2181.68 грн
В кошику  од. на суму  грн.
SS9015CBU SS9015CBU onsemi SS9015.pdf Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
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FOD3120TS FOD3120TS onsemi fod3120-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
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CAT3200HU2-GT3 CAT3200HU2-GT3 onsemi cat3200hu2-d.pdf Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
на замовлення 543158 шт:
термін постачання 21-31 дні (днів)
235+92.16 грн
Мінімальне замовлення: 235
В кошику  од. на суму  грн.
MBRF10H150CTG MBRF10H150CTG onsemi mbrf10h150ct-d.pdf Description: DIODE ARR SCHOTT 150V 5A TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -20°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 45 µA @ 150 V
на замовлення 103959 шт:
термін постачання 21-31 дні (днів)
329+67.25 грн
Мінімальне замовлення: 329
В кошику  од. на суму  грн.
NTZD3155CT2G-M07 onsemi Description: RECTIFIERS
Packaging: Tape & Reel (TR)
товару немає в наявності
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MC74HC574ADTR2G MC74HC574ADTR2G onsemi mc74hc574a-d.pdf Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
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MC74HC574ADTR2G MC74HC574ADTR2G onsemi mc74hc574a-d.pdf Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
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MC74HC574ADTR2G-Q MC74HC574ADTR2G-Q onsemi Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
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NVBG030N120M3S-IE NVBG030N120M3S-IE onsemi nvbg030n120m3s-d.pdf Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+1210.56 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NVBG030N120M3S-IE NVBG030N120M3S-IE onsemi nvbg030n120m3s-d.pdf Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
1+1859.35 грн
10+1439.31 грн
25+1351.67 грн
100+1178.03 грн
250+1134.92 грн
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MOC3022M MOC3022M onsemi moc3023m-d.pdf Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 422273 шт:
термін постачання 21-31 дні (днів)
6+60.75 грн
50+32.88 грн
100+30.15 грн
500+23.69 грн
1000+22.19 грн
2000+20.91 грн
5000+19.19 грн
10000+18.33 грн
25000+17.40 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NE5532D NE5532D onsemi NE5532.pdf Description: IC OPAMP GP 2 CIRCUIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 8mA
Slew Rate: 9V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 16-SOIC
Number of Circuits: 2
Current - Output / Channel: 38 mA
Voltage - Supply Span (Min): 6 V
Voltage - Supply Span (Max): 40 V
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HUF75333S3 HUF75333S3 onsemi HUF75333%28G3%2CP3%2CS3S%2CS3%29.pdf Description: MOSFET N-CH 55V 66A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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RS1G RS1G onsemi rs1m-d.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
7500+5.82 грн
15000+5.37 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
RS1G RS1G onsemi rs1m-d.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 18150 шт:
термін постачання 21-31 дні (днів)
15+23.96 грн
26+12.85 грн
100+12.76 грн
500+8.97 грн
1000+7.42 грн
2000+7.17 грн
Мінімальне замовлення: 15
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PZTA42 PZTA42 onsemi PZTA42T1G.pdf Description: TRANS NPN 300V 0.5A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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MC74VHC259DTG MC74VHC259DTG onsemi mc74vhc259-d.pdf Description: IC D-TYPE ADDR 1:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 16-TSSOP
на замовлення 68216 шт:
термін постачання 21-31 дні (днів)
685+32.52 грн
Мінімальне замовлення: 685
В кошику  од. на суму  грн.
MC74VHC259DG MC74VHC259DG onsemi mc74vhc259-d.pdf Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 16-SOIC
на замовлення 19488 шт:
термін постачання 21-31 дні (днів)
660+33.26 грн
Мінімальне замовлення: 660
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MC74ACT259DR2 MC74ACT259DR2 onsemi mc74ac259-d.pdf Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 6.5ns
Supplier Device Package: 16-SOIC
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
505+43.60 грн
Мінімальне замовлення: 505
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MC14050BDTR2G MC14050BDTR2G onsemi mc14049b-d.pdf Description: IC BUFF NON-INVERT 18V 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 18V
Number of Bits per Element: 1
Current - Output High, Low: 10mA, 40mA
Supplier Device Package: 16-TSSOP
на замовлення 55916 шт:
термін постачання 21-31 дні (днів)
771+28.82 грн
Мінімальне замовлення: 771
В кошику  од. на суму  грн.
SSR1N60BTM SSR1N60BTM onsemi SSR1N60B%2CSSU1N60B.pdf Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
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SSR1N60BTM-WS SSR1N60BTM-WS onsemi SSR1N60B%2CSSU1N60B.pdf Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
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MBRF20100CT MBRF20100CT onsemi mbrf20100ct-d.pdf description Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
на замовлення 93756 шт:
термін постачання 21-31 дні (днів)
189+115.38 грн
Мінімальне замовлення: 189
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MBRF20100CT MBRF20100CT onsemi mbrf20100ct-d.pdf description Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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UJ4C075033L8S UJ4C075033L8S onsemi UJ4C075033L8S-D.PDF Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
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UJ4C075033L8S UJ4C075033L8S onsemi UJ4C075033L8S-D.PDF Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
на замовлення 1245 шт:
термін постачання 21-31 дні (днів)
1+1067.87 грн
10+723.45 грн
100+651.45 грн
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2N2907A onsemi 2N%2CFTSO%2CPN%20NPN%20Type%20%2810p%29.pdf Description: TRANS PNP 40V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 400 mW
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MBR2060CTG MBR2060CTG onsemi MBR2060CT-D%2C%20MBR2090CT.pdf Description: DIODE ARRAY SCHOT 60V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
на замовлення 72153 шт:
термін постачання 21-31 дні (днів)
257+86.47 грн
Мінімальне замовлення: 257
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LM2904D LM2904D onsemi LM358-D.PDF Description: OPERATIONAL AMPLIFIER, SINGLE SU
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Supply: 750µA (x2 Channels)
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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FSQ0165RLX FSQ0165RLX onsemi fsq0365-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Power (Watts): 15 W
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NTTFS6H880NLTAG NTTFS6H880NLTAG onsemi nttfs6h880nl-d.pdf Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
на замовлення 7327 шт:
термін постачання 21-31 дні (днів)
5+69.31 грн
10+41.86 грн
100+27.23 грн
500+19.65 грн
Мінімальне замовлення: 5
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NVTFS6H880NLWFTAG NVTFS6H880NLWFTAG onsemi nvtfs6h880nl-d.pdf Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2218 шт:
термін постачання 21-31 дні (днів)
4+91.56 грн
10+55.37 грн
100+36.47 грн
500+26.62 грн
Мінімальне замовлення: 4
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NVTFS6H880NLTAG NVTFS6H880NLTAG onsemi NVTFS6H880NL-D.PDF Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
6+67.60 грн
10+40.21 грн
100+26.10 грн
500+18.80 грн
1000+16.97 грн
2000+15.43 грн
5000+13.53 грн
10000+12.51 грн
Мінімальне замовлення: 6
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NVTFS6H880NWFTAG NVTFS6H880NWFTAG onsemi nvtfs6h880n-d.pdf Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
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NVTFS6H880NWFTAG NVTFS6H880NWFTAG onsemi nvtfs6h880n-d.pdf Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
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NTTFS6H880NTAG NTTFS6H880NTAG onsemi nttfs6h880n-d.pdf Description: T8 80V U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
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NTTFS6H880NTAG NTTFS6H880NTAG onsemi nttfs6h880n-d.pdf Description: T8 80V U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
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NE555N NE555N onsemi NE555.pdf Description: IC OSC SINGLE TIMER 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: 555 Type, Timer/Oscillator (Single)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 16V
Supplier Device Package: 8-DIP
Current - Supply: 7.5 mA
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MMBT2907A RFG MMBT2907A RFG onsemi MMBT2907A_C2001.pdf Description: TRANS PNP 60V 0.8A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
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MOC3023 MOC3023 onsemi MOC3021-23.pdf Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
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SS36 SS36 onsemi ss39-d.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+17.30 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SS36 SS36 onsemi ss39-d.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 4353 шт:
термін постачання 21-31 дні (днів)
10+36.65 грн
13+25.79 грн
100+22.38 грн
500+19.00 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MM74HC14SJX MM74HC14SJX onsemi mm74hc14-d.pdf Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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FQP12N60C FQP12N60C onsemi fqp12n60c-d.pdf Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
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HGT1S12N60A4DS HGT1S12N60A4DS onsemi hgt1s12n60a4ds-d.pdf Description: IGBT 600V 54A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
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FCD850N80Z FCD850N80Z onsemi fcu850n80z-d.pdf Description: MOSFET N-CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+74.65 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FCD850N80Z FCD850N80Z onsemi fcu850n80z-d.pdf Description: MOSFET N-CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
на замовлення 18066 шт:
термін постачання 21-31 дні (днів)
2+237.87 грн
10+149.22 грн
100+103.54 грн
500+82.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FCP650N80Z FCP650N80Z onsemi fcp650n80z-d.pdf Description: MOSFET N-CH 800V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V
на замовлення 1954 шт:
термін постачання 21-31 дні (днів)
168+132.29 грн
Мінімальне замовлення: 168
В кошику  од. на суму  грн.
FCU850N80Z FCU850N80Z onsemi fcu850n80z-d.pdf Description: MOSFET N-CH 800V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
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FCU2250N80Z FCU2250N80Z onsemi fcu2250n80z-d.pdf Description: MOSFET N-CH 800V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
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FGH40N60SFTU FGH40N60SFTU onsemi fgh40n60sf-d.pdf Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
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SGH40N60UFTU SGH40N60UFTU onsemi sgh40n60uf-d.pdf Description: IGBT 600V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
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MOC3021 MOC3021 onsemi MOC3021-23.pdf Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
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74ACT245PC 74ACT245PC onsemi 74act245-d.pdf description Description: IC TXRX NON-INVERT 5.5V 20-PDIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-PDIP
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74ACT245MSA 74ACT245MSA onsemi 74act245-d.pdf Description: IC TXRX NON-INVERT 5.5V 20-SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SSOP
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DTA124XM3T5G DTA124XM3T5G onsemi dta124x-d.pdf Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 88000 шт:
термін постачання 21-31 дні (днів)
8000+3.64 грн
16000+3.18 грн
24000+3.01 грн
40000+2.65 грн
56000+2.55 грн
80000+2.45 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
SZNZ8F5V1MX2WT5G nz8f2v4mx2w-d.pdf
SZNZ8F5V1MX2WT5G
Виробник: onsemi
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
на замовлення 136000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+4.29 грн
16000+4.09 грн
24000+3.98 грн
40000+3.45 грн
56000+3.11 грн
80000+3.02 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
SZNZ8F5V1MX2WT5G nz8f2v4mx2w-d.pdf
SZNZ8F5V1MX2WT5G
Виробник: onsemi
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
на замовлення 136000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+25.67 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
AR0145CS1C00SMKA0-CP-E ar0145cs-pd-d.pdf
AR0145CS1C00SMKA0-CP-E
Виробник: onsemi
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Packaging: Tray
Package / Case: 47-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 2.8µm x 2.8µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 47-ODCSP (5.74x4.42)
Frames per Second: 120.0
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2945.19 грн
10+2312.39 грн
25+2181.68 грн
В кошику  од. на суму  грн.
AR0145CS1C28SMKA0-CP-E ar0145cs-pd-d.pdf
AR0145CS1C28SMKA0-CP-E
Виробник: onsemi
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Packaging: Tray
Package / Case: 47-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 2.8µm x 2.8µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 47-ODCSP (5.74x4.42)
Frames per Second: 120.0
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2945.19 грн
10+2312.39 грн
25+2181.68 грн
В кошику  од. на суму  грн.
SS9015CBU SS9015.pdf
SS9015CBU
Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
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FOD3120TS fod3120-d.pdf
FOD3120TS
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
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CAT3200HU2-GT3 cat3200hu2-d.pdf
CAT3200HU2-GT3
Виробник: onsemi
Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
на замовлення 543158 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
235+92.16 грн
Мінімальне замовлення: 235
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MBRF10H150CTG mbrf10h150ct-d.pdf
MBRF10H150CTG
Виробник: onsemi
Description: DIODE ARR SCHOTT 150V 5A TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -20°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 45 µA @ 150 V
на замовлення 103959 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
329+67.25 грн
Мінімальне замовлення: 329
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NTZD3155CT2G-M07
Виробник: onsemi
Description: RECTIFIERS
Packaging: Tape & Reel (TR)
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MC74HC574ADTR2G mc74hc574a-d.pdf
MC74HC574ADTR2G
Виробник: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
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MC74HC574ADTR2G mc74hc574a-d.pdf
MC74HC574ADTR2G
Виробник: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
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MC74HC574ADTR2G-Q
MC74HC574ADTR2G-Q
Виробник: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
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NVBG030N120M3S-IE nvbg030n120m3s-d.pdf
NVBG030N120M3S-IE
Виробник: onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+1210.56 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NVBG030N120M3S-IE nvbg030n120m3s-d.pdf
NVBG030N120M3S-IE
Виробник: onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1859.35 грн
10+1439.31 грн
25+1351.67 грн
100+1178.03 грн
250+1134.92 грн
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MOC3022M moc3023m-d.pdf
MOC3022M
Виробник: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 422273 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.75 грн
50+32.88 грн
100+30.15 грн
500+23.69 грн
1000+22.19 грн
2000+20.91 грн
5000+19.19 грн
10000+18.33 грн
25000+17.40 грн
Мінімальне замовлення: 6
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NE5532D NE5532.pdf
NE5532D
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 8mA
Slew Rate: 9V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 16-SOIC
Number of Circuits: 2
Current - Output / Channel: 38 mA
Voltage - Supply Span (Min): 6 V
Voltage - Supply Span (Max): 40 V
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HUF75333S3 HUF75333%28G3%2CP3%2CS3S%2CS3%29.pdf
HUF75333S3
Виробник: onsemi
Description: MOSFET N-CH 55V 66A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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RS1G rs1m-d.pdf
RS1G
Виробник: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+5.82 грн
15000+5.37 грн
Мінімальне замовлення: 7500
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RS1G rs1m-d.pdf
RS1G
Виробник: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 18150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+23.96 грн
26+12.85 грн
100+12.76 грн
500+8.97 грн
1000+7.42 грн
2000+7.17 грн
Мінімальне замовлення: 15
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PZTA42 PZTA42T1G.pdf
PZTA42
Виробник: onsemi
Description: TRANS NPN 300V 0.5A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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MC74VHC259DTG mc74vhc259-d.pdf
MC74VHC259DTG
Виробник: onsemi
Description: IC D-TYPE ADDR 1:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 16-TSSOP
на замовлення 68216 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
685+32.52 грн
Мінімальне замовлення: 685
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MC74VHC259DG mc74vhc259-d.pdf
MC74VHC259DG
Виробник: onsemi
Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 16-SOIC
на замовлення 19488 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
660+33.26 грн
Мінімальне замовлення: 660
В кошику  од. на суму  грн.
MC74ACT259DR2 mc74ac259-d.pdf
MC74ACT259DR2
Виробник: onsemi
Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 6.5ns
Supplier Device Package: 16-SOIC
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
505+43.60 грн
Мінімальне замовлення: 505
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MC14050BDTR2G mc14049b-d.pdf
MC14050BDTR2G
Виробник: onsemi
Description: IC BUFF NON-INVERT 18V 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 18V
Number of Bits per Element: 1
Current - Output High, Low: 10mA, 40mA
Supplier Device Package: 16-TSSOP
на замовлення 55916 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
771+28.82 грн
Мінімальне замовлення: 771
В кошику  од. на суму  грн.
SSR1N60BTM SSR1N60B%2CSSU1N60B.pdf
SSR1N60BTM
Виробник: onsemi
Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
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SSR1N60BTM-WS SSR1N60B%2CSSU1N60B.pdf
SSR1N60BTM-WS
Виробник: onsemi
Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
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MBRF20100CT description mbrf20100ct-d.pdf
MBRF20100CT
Виробник: onsemi
Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
на замовлення 93756 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
189+115.38 грн
Мінімальне замовлення: 189
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MBRF20100CT description mbrf20100ct-d.pdf
MBRF20100CT
Виробник: onsemi
Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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UJ4C075033L8S UJ4C075033L8S-D.PDF
UJ4C075033L8S
Виробник: onsemi
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
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UJ4C075033L8S UJ4C075033L8S-D.PDF
UJ4C075033L8S
Виробник: onsemi
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
на замовлення 1245 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1067.87 грн
10+723.45 грн
100+651.45 грн
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2N2907A 2N%2CFTSO%2CPN%20NPN%20Type%20%2810p%29.pdf
Виробник: onsemi
Description: TRANS PNP 40V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 400 mW
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MBR2060CTG MBR2060CT-D%2C%20MBR2090CT.pdf
MBR2060CTG
Виробник: onsemi
Description: DIODE ARRAY SCHOT 60V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
на замовлення 72153 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
257+86.47 грн
Мінімальне замовлення: 257
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LM2904D LM358-D.PDF
LM2904D
Виробник: onsemi
Description: OPERATIONAL AMPLIFIER, SINGLE SU
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Supply: 750µA (x2 Channels)
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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FSQ0165RLX fsq0365-d.pdf
FSQ0165RLX
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Power (Watts): 15 W
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NTTFS6H880NLTAG nttfs6h880nl-d.pdf
NTTFS6H880NLTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
на замовлення 7327 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.31 грн
10+41.86 грн
100+27.23 грн
500+19.65 грн
Мінімальне замовлення: 5
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NVTFS6H880NLWFTAG nvtfs6h880nl-d.pdf
NVTFS6H880NLWFTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2218 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.56 грн
10+55.37 грн
100+36.47 грн
500+26.62 грн
Мінімальне замовлення: 4
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NVTFS6H880NLTAG NVTFS6H880NL-D.PDF
NVTFS6H880NLTAG
Виробник: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+67.60 грн
10+40.21 грн
100+26.10 грн
500+18.80 грн
1000+16.97 грн
2000+15.43 грн
5000+13.53 грн
10000+12.51 грн
Мінімальне замовлення: 6
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NVTFS6H880NWFTAG nvtfs6h880n-d.pdf
NVTFS6H880NWFTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
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NVTFS6H880NWFTAG nvtfs6h880n-d.pdf
NVTFS6H880NWFTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
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NTTFS6H880NTAG nttfs6h880n-d.pdf
NTTFS6H880NTAG
Виробник: onsemi
Description: T8 80V U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
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NTTFS6H880NTAG nttfs6h880n-d.pdf
NTTFS6H880NTAG
Виробник: onsemi
Description: T8 80V U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
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NE555N NE555.pdf
NE555N
Виробник: onsemi
Description: IC OSC SINGLE TIMER 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: 555 Type, Timer/Oscillator (Single)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 16V
Supplier Device Package: 8-DIP
Current - Supply: 7.5 mA
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MMBT2907A RFG MMBT2907A_C2001.pdf
MMBT2907A RFG
Виробник: onsemi
Description: TRANS PNP 60V 0.8A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
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MOC3023 MOC3021-23.pdf
MOC3023
Виробник: onsemi
Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
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SS36 ss39-d.pdf
SS36
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+17.30 грн
Мінімальне замовлення: 3000
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SS36 ss39-d.pdf
SS36
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 4353 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.65 грн
13+25.79 грн
100+22.38 грн
500+19.00 грн
Мінімальне замовлення: 10
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MM74HC14SJX mm74hc14-d.pdf
MM74HC14SJX
Виробник: onsemi
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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FQP12N60C fqp12n60c-d.pdf
FQP12N60C
Виробник: onsemi
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
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HGT1S12N60A4DS hgt1s12n60a4ds-d.pdf
HGT1S12N60A4DS
Виробник: onsemi
Description: IGBT 600V 54A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
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FCD850N80Z fcu850n80z-d.pdf
FCD850N80Z
Виробник: onsemi
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+74.65 грн
Мінімальне замовлення: 2500
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FCD850N80Z fcu850n80z-d.pdf
FCD850N80Z
Виробник: onsemi
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
на замовлення 18066 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+237.87 грн
10+149.22 грн
100+103.54 грн
500+82.58 грн
Мінімальне замовлення: 2
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FCP650N80Z fcp650n80z-d.pdf
FCP650N80Z
Виробник: onsemi
Description: MOSFET N-CH 800V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V
на замовлення 1954 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
168+132.29 грн
Мінімальне замовлення: 168
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FCU850N80Z fcu850n80z-d.pdf
FCU850N80Z
Виробник: onsemi
Description: MOSFET N-CH 800V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
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FCU2250N80Z fcu2250n80z-d.pdf
FCU2250N80Z
Виробник: onsemi
Description: MOSFET N-CH 800V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
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FGH40N60SFTU fgh40n60sf-d.pdf
FGH40N60SFTU
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
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SGH40N60UFTU sgh40n60uf-d.pdf
SGH40N60UFTU
Виробник: onsemi
Description: IGBT 600V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
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MOC3021 MOC3021-23.pdf
MOC3021
Виробник: onsemi
Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
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74ACT245PC description 74act245-d.pdf
74ACT245PC
Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 20-PDIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-PDIP
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74ACT245MSA 74act245-d.pdf
74ACT245MSA
Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 20-SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SSOP
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DTA124XM3T5G dta124x-d.pdf
DTA124XM3T5G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 88000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+3.64 грн
16000+3.18 грн
24000+3.01 грн
40000+2.65 грн
56000+2.55 грн
80000+2.45 грн
Мінімальне замовлення: 8000
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