| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1N6373RL4 | onsemi |
 Description: TVS DIODE 5VWM 9.4V AXIALPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 160A Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 9.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N6373 | onsemi |
Description: TVS DIODE 5VWM 9.4VC AXIAL Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 9.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NLSX5011BMX1TCG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 6ULLGA Features: Auto-Direction Sensing, Power-Off Protection Packaging: Bulk Package / Case: 6-XFLGA Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-ULLGA (1.2x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 4400 шт: термін постачання 21-31 дні (днів) |
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NLSX5011MUTCG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN Features: Auto-Direction Sensing, Power-Off Protection Packaging: Bulk Package / Case: 6-UFDFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 6-UDFN (1.2x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 153436 шт: термін постачання 21-31 дні (днів) |
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NLSX4373MUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN Features: Auto-Direction Sensing Packaging: Bulk Package / Case: 8-UFDFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 20Mbps Supplier Device Package: 8-UDFN (1.8x1.2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.5 V ~ 5.5 V Voltage - VCCB: 1.5 V ~ 5.5 V Number of Circuits: 1 |
на замовлення 3484038 шт: термін постачання 21-31 дні (днів) |
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NLSX3012DR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC Features: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-SOIC Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 1.3 V ~ 4.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NLSX3012DR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC Features: Auto-Direction Sensing Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-SOIC Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 1.3 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 16117 шт: термін постачання 21-31 дні (днів) |
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NLSX4014DR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 14SOIC Features: Auto-Direction Sensing Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 140Mbps Supplier Device Package: 14-SOIC Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 0.9 V ~ 4.1 V Voltage - VCCB: 1.3 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 11051 шт: термін постачання 21-31 дні (днів) |
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NLSX5012DMR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8MSOP Features: Auto-Direction Sensing, Power-Off Protection Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-MSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 1167 шт: термін постачання 21-31 дні (днів) |
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NLSX5012DR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC Features: Auto-Direction Sensing, Power-Off Protection Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-SOIC Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NLSX5012DR2G | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC Features: Auto-Direction Sensing, Power-Off Protection Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Data Rate: 100Mbps Supplier Device Package: 8-SOIC Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 0.9 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 2433 шт: термін постачання 21-31 дні (днів) |
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NLSX3373MUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN Features: Auto-Direction Sensing Packaging: Bulk Package / Case: 8-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 8Mbps Supplier Device Package: 8-UDFN (1.8x1.2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.2 V ~ 4.1 V Voltage - VCCB: 1.65 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 254925 шт: термін постачання 21-31 дні (днів) |
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NLSX5004MUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 12UQFN Packaging: Tape & Reel (TR) Package / Case: 12-UFQFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 140Mbps Supplier Device Package: 12-UQFN (1.7x2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 0.9 V ~ 3.6 V Voltage - VCCB: 0.9 V ~ 3.6 V Number of Circuits: 1 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NLSX4402FMUTAG | onsemi |
Description: 2-BIT 20 MB/S DUAL-SUPPLY LEVEL Packaging: Bulk Package / Case: 8-UFDFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 20Mbps Supplier Device Package: 8-UDFN (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.5 V ~ 5.5 V Voltage - VCCB: 1.5 V ~ 5.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| AR0136AT3B00XUEA0-TL-TPBR | onsemi |
Description: MODULE Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4151 | onsemi |
Description: DIODE STANDARD 75V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5242B | onsemi |
Description: DIODE ZENER 12V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V |
на замовлення 85212 шт: термін постачання 21-31 дні (днів) |
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FAN1117AD25X | onsemi |
Description: IC REG LINEAR 2.5V 1A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 18V Number of Regulators: 1 Supplier Device Package: TO-252AA Voltage - Output (Min/Fixed): 2.5V PSRR: 72dB (120Hz) Voltage Dropout (Max): 1.2V @ 1A Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1405A | onsemi |
Description: DIODE ARR GP 175V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 175 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 175 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1405A | onsemi |
Description: DIODE ARR GP 175V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 175 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 175 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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6N136SM | onsemi |
Description: OPTOISO 5KV TRANS W/BASE 8-SMD Packaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SB530 | onsemi |
Description: DIODE SCHOTTKY 30V 5A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 1250 шт: термін постачання 21-31 дні (днів) |
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SB530 | onsemi |
Description: DIODE SCHOTTKY 30V 5A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 1521 шт: термін постачання 21-31 дні (днів) |
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MC74HC540ADTR2G-Q | onsemi |
Description: IC BUFFER INVERT 6V 20TSSOP Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P6KE200ARL | onsemi |
Description: TVS DIODE 171VWM 274VC AXIAL Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A (8/20µs) Voltage - Reverse Standoff (Typ): 171V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 190V Voltage - Clamping (Max) @ Ipp: 274V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P6KE200ARL | onsemi |
Description: TVS DIODE 171VWM 274VC AXIAL Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A (8/20µs) Voltage - Reverse Standoff (Typ): 171V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 190V Voltage - Clamping (Max) @ Ipp: 274V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FSB52006S | onsemi |
Description: AC MOTOR CONTROLLER, 5A Packaging: Bulk Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 2.6 A Voltage: 60 V |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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FSB52006S | onsemi |
Description: MODULE SPM 60V 2.6A SPM5D Packaging: Tube Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 2.6 A Voltage: 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TIP112 | onsemi |
Description: TRANS NPN DARL 100V 2A TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM833N | onsemi |
Description: OPERATIONAL AMPLIFIER, LOW NOISE Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Single-Ended Mounting Type: Through Hole Amplifier Type: Standard Operating Temperature: -40°C ~ 85°C (TA) Current - Supply: 2mA (x2 Channels) Slew Rate: 7V/µs Gain Bandwidth Product: 15 MHz Current - Input Bias: 300 µA Voltage - Input Offset: 300 mV Supplier Device Package: 8-PDIP Number of Circuits: 2 Current - Output / Channel: 29 mA Voltage - Supply Span (Min): 10 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P6KE68ARL | onsemi |
Description: TVS DIODE 58.1VWM 92VC AXIAL Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.5A (8/20µs) Voltage - Reverse Standoff (Typ): 58.1V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC3021 | onsemi |
Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Voltage - Isolation: 5300Vrms Current - Hold (Ih): 100µA Supplier Device Package: 6-DIP Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 15mA Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRL540A | onsemi |
Description: MOSFET N-CH 100V 28A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PN2222TFR | onsemi |
Description: TRANS NPN 30V 0.6A TO-92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX85C5V1-T50A | onsemi |
Description: DIODE ZENER 5.1V 1W DO41 Tolerance: ±6% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 156000 шт: термін постачання 21-31 дні (днів) |
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1N4004GP | onsemi |
Description: DIODE STANDARD 400V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7002K | onsemi |
Description: MOSFET N-CH 60V 320MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V |
на замовлення 156000 шт: термін постачання 21-31 дні (днів) |
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2N7002K | onsemi |
Description: MOSFET N-CH 60V 320MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V |
на замовлення 162831 шт: термін постачання 21-31 дні (днів) |
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MPQ6842 | onsemi |
Description: TRANS NPN/PNP 30V 200MA 14-PDIP Packaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Transistor Type: 1 NPN, 1 PNP Complementary Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V Frequency - Transition: 350MHz Supplier Device Package: 14-PDIP |
на замовлення 8746 шт: термін постачання 21-31 дні (днів) |
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BZX55C12 | onsemi |
Description: DIODE ZENER 12V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 9 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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H11L1 | onsemi |
 Description: OPTOISO 5.3KV OPN COLL 6-DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Open Collector Mounting Type: Through Hole Data Rate: 1MHz Input Type: DC Voltage - Isolation: 5300Vrms Current - DC Forward (If) (Max): 1.6mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-DIP Number of Channels: 1 Current - Output / Channel: 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NC7SZ10P6X-L22347 | onsemi |
Description: IC GATE NAND 1CH 3-INP SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: SC-88/SC70-6/SOT-363 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FJD3076TM | onsemi |
Description: TRANS NPN 32V 2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V Frequency - Transition: 100MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSB4904DW1T2G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBPC3506W | onsemi |
Description: BRIDGE RECT 1P 600V 35A GBPC-W Packaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTBL032N065M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET ELI Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V |
на замовлення 15995 шт: термін постачання 21-31 дні (днів) |
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NTH4L032N065M3S | onsemi |
Description: SIC MOS TO247-4L 32MOHM 650V M3S Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V |
на замовлення 10700 шт: термін постачання 21-31 дні (днів) |
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NVBG032N065M3S | onsemi |
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 136000 шт: термін постачання 21-31 дні (днів) |
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NVBG032N065M3S | onsemi |
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 136768 шт: термін постачання 21-31 дні (днів) |
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NVH4L032N065M3S | onsemi |
Description: SIC MOS TO247-4L 32MOHM 650V M3S Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 14362 шт: термін постачання 21-31 дні (днів) |
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BD679 | onsemi |
Description: TRANS NPN DARL 80V 4A TO-126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BD679A | onsemi |
Description: TRANS NPN DARL 80V 4A TO-126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BD140 | onsemi |
Description: TRANS PNP 80V 1.5A TO-126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.25 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC00SJX | onsemi |
Description: IC GATE NAND 4CH 2-INP 14SOP Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC00SJX | onsemi |
Description: IC GATE NAND 4CH 2-INP 14SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC00SJX | onsemi |
Description: IC GATE NAND 4CH 2-INP 14SOP Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 22000 шт: термін постачання 21-31 дні (днів) |
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NVMJD036N10MCLTWG | onsemi |
Description: MOSFET - POWER, DUAL, N-CHANNEL, Packaging: Bulk Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 36W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 50V Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSC945CGBU | onsemi |
Description: TRANS NPN 50V 0.15A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 2N2907A | onsemi |
Description: TRANS PNP 40V 0.6A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 400 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14538BFELG | onsemi |
Description: IC MMV 2-CIR 95-NS 16-SOEIAJ Packaging: Bulk Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -55°C ~ 125°C Propagation Delay: 95 ns Independent Circuits: 2 Current - Output High, Low: 8.8mA, 8.8mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOEIAJ Voltage - Supply: 3 V ~ 18 V |
на замовлення 255 шт: термін постачання 21-31 дні (днів) |
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| 1N6373RL4 |
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Виробник: onsemi
Description: TVS DIODE 5VWM 9.4V AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 5VWM 9.4V AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| 1N6373 |
|
Виробник: onsemi
Description: TVS DIODE 5VWM 9.4VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 5VWM 9.4VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| NLSX5011BMX1TCG |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6ULLGA
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-XFLGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-ULLGA (1.2x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 6ULLGA
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-XFLGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-ULLGA (1.2x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
на замовлення 4400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 728+ | 29.02 грн |
| NLSX5011MUTCG |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.2x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.2x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
на замовлення 153436 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 380+ | 55.91 грн |
| NLSX4373MUTAG |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
на замовлення 3484038 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 469+ | 45.29 грн |
| NLSX3012DR2G |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
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В кошику
од. на суму грн.
| NLSX3012DR2G |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
на замовлення 16117 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 389+ | 54.49 грн |
| NLSX4014DR2G |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 14SOIC
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 14-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.1 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 14SOIC
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 14-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.1 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
на замовлення 11051 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 283+ | 75.02 грн |
| NLSX5012DMR2G |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8MSOP
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-MSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8MSOP
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-MSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
на замовлення 1167 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 193.19 грн |
| 10+ | 167.28 грн |
| 25+ | 157.82 грн |
| 100+ | 126.17 грн |
| 250+ | 118.47 грн |
| 500+ | 103.66 грн |
| 1000+ | 84.48 грн |
| NLSX5012DR2G |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
товару немає в наявності
В кошику
од. на суму грн.
| NLSX5012DR2G |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
на замовлення 2433 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 232.63 грн |
| 10+ | 143.01 грн |
| 25+ | 121.70 грн |
| 100+ | 91.63 грн |
| 250+ | 80.55 грн |
| 500+ | 73.73 грн |
| 1000+ | 66.90 грн |
| NLSX3373MUTAG |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 8Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.2 V ~ 4.1 V
Voltage - VCCB: 1.65 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 8Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.2 V ~ 4.1 V
Voltage - VCCB: 1.65 V ~ 4.5 V
Number of Circuits: 1
на замовлення 254925 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 222+ | 95.54 грн |
| NLSX5004MUTAG |
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 12UQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 3.6 V
Voltage - VCCB: 0.9 V ~ 3.6 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 12UQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 3.6 V
Voltage - VCCB: 0.9 V ~ 3.6 V
Number of Circuits: 1
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.60 грн |
| 6000+ | 14.62 грн |
| 9000+ | 14.42 грн |
| 15000+ | 13.32 грн |
| 21000+ | 13.20 грн |
| NLSX4402FMUTAG |
|
Виробник: onsemi
Description: 2-BIT 20 MB/S DUAL-SUPPLY LEVEL
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
Description: 2-BIT 20 MB/S DUAL-SUPPLY LEVEL
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
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В кошику
од. на суму грн.
| 1N4151 |
|
Виробник: onsemi
Description: DIODE STANDARD 75V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Description: DIODE STANDARD 75V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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В кошику
од. на суму грн.
| 1N5242B |
|
Виробник: onsemi
Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
на замовлення 85212 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.24 грн |
| 73+ | 4.26 грн |
| 169+ | 1.84 грн |
| 500+ | 1.60 грн |
| 1000+ | 1.28 грн |
| 2000+ | 1.25 грн |
| 5000+ | 1.19 грн |
| 10000+ | 1.07 грн |
| 50000+ | 0.88 грн |
| FAN1117AD25X |
|
Виробник: onsemi
Description: IC REG LINEAR 2.5V 1A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: TO-252AA
Voltage - Output (Min/Fixed): 2.5V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.5V 1A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: TO-252AA
Voltage - Output (Min/Fixed): 2.5V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature
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В кошику
од. на суму грн.
| MMBD1405A |
|
Виробник: onsemi
Description: DIODE ARR GP 175V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Description: DIODE ARR GP 175V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
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од. на суму грн.
| MMBD1405A |
|
Виробник: onsemi
Description: DIODE ARR GP 175V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Description: DIODE ARR GP 175V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
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од. на суму грн.
| 6N136SM |
|
Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.30 грн |
| 50+ | 63.87 грн |
| 100+ | 59.12 грн |
| 500+ | 47.52 грн |
| 1000+ | 44.92 грн |
| SB530 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1250+ | 18.89 грн |
| SB530 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 1521 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.42 грн |
| 10+ | 41.39 грн |
| 100+ | 26.98 грн |
| 500+ | 19.49 грн |
| MC74HC540ADTR2G-Q |
Виробник: onsemi
Description: IC BUFFER INVERT 6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
Description: IC BUFFER INVERT 6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
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| P6KE200ARL |
|
Виробник: onsemi
Description: TVS DIODE 171VWM 274VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 171VWM 274VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
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| P6KE200ARL |
|
Виробник: onsemi
Description: TVS DIODE 171VWM 274VC AXIAL
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 171VWM 274VC AXIAL
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
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| FSB52006S |
|
Виробник: onsemi
Description: AC MOTOR CONTROLLER, 5A
Packaging: Bulk
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 2.6 A
Voltage: 60 V
Description: AC MOTOR CONTROLLER, 5A
Packaging: Bulk
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 2.6 A
Voltage: 60 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 68+ | 314.23 грн |
| FSB52006S |
|
Виробник: onsemi
Description: MODULE SPM 60V 2.6A SPM5D
Packaging: Tube
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 2.6 A
Voltage: 60 V
Description: MODULE SPM 60V 2.6A SPM5D
Packaging: Tube
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 2.6 A
Voltage: 60 V
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| TIP112 |
|
Виробник: onsemi
Description: TRANS NPN DARL 100V 2A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS NPN DARL 100V 2A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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| LM833N |
|
Виробник: onsemi
Description: OPERATIONAL AMPLIFIER, LOW NOISE
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Single-Ended
Mounting Type: Through Hole
Amplifier Type: Standard
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 2mA (x2 Channels)
Slew Rate: 7V/µs
Gain Bandwidth Product: 15 MHz
Current - Input Bias: 300 µA
Voltage - Input Offset: 300 mV
Supplier Device Package: 8-PDIP
Number of Circuits: 2
Current - Output / Channel: 29 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 36 V
Description: OPERATIONAL AMPLIFIER, LOW NOISE
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Single-Ended
Mounting Type: Through Hole
Amplifier Type: Standard
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 2mA (x2 Channels)
Slew Rate: 7V/µs
Gain Bandwidth Product: 15 MHz
Current - Input Bias: 300 µA
Voltage - Input Offset: 300 mV
Supplier Device Package: 8-PDIP
Number of Circuits: 2
Current - Output / Channel: 29 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 36 V
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| P6KE68ARL |
|
Виробник: onsemi
Description: TVS DIODE 58.1VWM 92VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 58.1VWM 92VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
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| MOC3021 |
|
Виробник: onsemi
Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
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| IRL540A |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Description: MOSFET N-CH 100V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
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| PN2222TFR |
|
Виробник: onsemi
Description: TRANS NPN 30V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN 30V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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| BZX85C5V1-T50A |
|
Виробник: onsemi
Description: DIODE ZENER 5.1V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.1V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 156000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6299+ | 3.52 грн |
| 1N4004GP |
|
Виробник: onsemi
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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| 2N7002K |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
на замовлення 156000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.24 грн |
| 6000+ | 3.05 грн |
| 9000+ | 2.64 грн |
| 2N7002K |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
на замовлення 162831 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.73 грн |
| 30+ | 10.62 грн |
| 100+ | 6.09 грн |
| 500+ | 5.59 грн |
| 1000+ | 4.95 грн |
| MPQ6842 |
|
Виробник: onsemi
Description: TRANS NPN/PNP 30V 200MA 14-PDIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Frequency - Transition: 350MHz
Supplier Device Package: 14-PDIP
Description: TRANS NPN/PNP 30V 200MA 14-PDIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Frequency - Transition: 350MHz
Supplier Device Package: 14-PDIP
на замовлення 8746 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 243+ | 87.76 грн |
| BZX55C12 |
|
Виробник: onsemi
Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
товару немає в наявності
В кошику
од. на суму грн.
| H11L1 | |
|
Виробник: onsemi
Description: OPTOISO 5.3KV OPN COLL 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 5300Vrms
Current - DC Forward (If) (Max): 1.6mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5.3KV OPN COLL 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 5300Vrms
Current - DC Forward (If) (Max): 1.6mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Number of Channels: 1
Current - Output / Channel: 50 mA
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| NC7SZ10P6X-L22347 |
|
Виробник: onsemi
Description: IC GATE NAND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-88/SC70-6/SOT-363
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-88/SC70-6/SOT-363
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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| FJD3076TM |
|
Виробник: onsemi
Description: TRANS NPN 32V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Description: TRANS NPN 32V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
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| NSB4904DW1T2G |
|
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
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| GBPC3506W |
|
Виробник: onsemi
Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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| NTBL032N065M3S |
|
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V
на замовлення 15995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 575.54 грн |
| 10+ | 377.81 грн |
| 100+ | 278.01 грн |
| 500+ | 233.31 грн |
| NTH4L032N065M3S |
|
Виробник: onsemi
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
на замовлення 10700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 689.04 грн |
| 10+ | 460.67 грн |
| 450+ | 376.26 грн |
| NVBG032N065M3S |
|
Виробник: onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
на замовлення 136000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 582.64 грн |
| NVBG032N065M3S |
|
Виробник: onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
на замовлення 136768 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 941.80 грн |
| 10+ | 642.83 грн |
| 100+ | 570.68 грн |
| NVH4L032N065M3S |
|
Виробник: onsemi
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
Qualification: AEC-Q101
на замовлення 14362 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1011.03 грн |
| 30+ | 656.13 грн |
| 120+ | 617.02 грн |
| 510+ | 567.23 грн |
| BD679 |
|
Виробник: onsemi
Description: TRANS NPN DARL 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: TRANS NPN DARL 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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| BD679A | |
|
Виробник: onsemi
Description: TRANS NPN DARL 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: TRANS NPN DARL 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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| BD140 |
|
Виробник: onsemi
Description: TRANS PNP 80V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Description: TRANS PNP 80V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
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| MM74HC00SJX |
|
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| MM74HC00SJX |
|
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| MM74HC00SJX |
|
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 561+ | 38.22 грн |
| NVMJD036N10MCLTWG |
|
Виробник: onsemi
Description: MOSFET - POWER, DUAL, N-CHANNEL,
Packaging: Bulk
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET - POWER, DUAL, N-CHANNEL,
Packaging: Bulk
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
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| KSC945CGBU |
|
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
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| 2N2907A |
|
Виробник: onsemi
Description: TRANS PNP 40V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 400 mW
Description: TRANS PNP 40V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 400 mW
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| MC14538BFELG |
|
Виробник: onsemi
Description: IC MMV 2-CIR 95-NS 16-SOEIAJ
Packaging: Bulk
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 95 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOEIAJ
Voltage - Supply: 3 V ~ 18 V
Description: IC MMV 2-CIR 95-NS 16-SOEIAJ
Packaging: Bulk
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 95 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOEIAJ
Voltage - Supply: 3 V ~ 18 V
на замовлення 255 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 255+ | 47.42 грн |