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FAN53740UCA1X onsemi Description: IC REG MICRO PMIC 9WLCSP
Packaging: Cut Tape (CT)
на замовлення 830996 шт:
термін постачання 21-31 дні (днів)
3+156.16 грн
10+93.56 грн
25+78.88 грн
100+58.43 грн
250+50.77 грн
500+46.06 грн
1000+41.43 грн
Мінімальне замовлення: 3
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NTMS4802NR2G NTMS4802NR2G onsemi ntms4802n-d.pdf Description: MOSFET N-CH 30V 11.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 10V
Power Dissipation (Max): 910mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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MM74HC74ASJX MM74HC74ASJX onsemi mm74hc74a-d.pdf Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 94 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Bits per Element: 1
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MM74HC74ASJX MM74HC74ASJX onsemi mm74hc74a-d.pdf Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 94 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Bits per Element: 1
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1.5KE15CA 1.5KE15CA onsemi ONSMS15463-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 12.8VWM 21.2VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 28150 шт:
термін постачання 21-31 дні (днів)
689+31.02 грн
Мінімальне замовлення: 689
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LM7805CT LM7805CT onsemi MC7800%28A%2CAE%29%2CNCV7800.pdf Description: IC REG LINEAR 5V 1.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 5V
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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2N2222A onsemi NPN%20Small%20Signal%20Amplifiers%2C%20Switches.pdf Description: TRANS NPN 40V 0.8A TO-18
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
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MMBT2222A MMBT2222A onsemi mmbt2222.pdf MMBT2222AS2S1P.pdf?rlkey=z653ewut8n4n3thiy3922tbal&st=0qc0cqlu&dl=0 MMBT2222A.pdf MMBT2222x.pdf MMBT2222A.pdf 5399_MMBT2222A%20SOT-23.PDF Description: TRANS NPN 40V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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MMBT2222A MMBT2222A onsemi mmbt2222.pdf MMBT2222AS2S1P.pdf?rlkey=z653ewut8n4n3thiy3922tbal&st=0qc0cqlu&dl=0 MMBT2222A.pdf MMBT2222x.pdf MMBT2222A.pdf 5399_MMBT2222A%20SOT-23.PDF Description: TRANS NPN 40V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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NLV14069UBDTR2G NLV14069UBDTR2G onsemi mc14069ub-d.pdf Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 4V ~ 12.5V
Input Logic Level - Low: 1V ~ 2.5V
Max Propagation Delay @ V, Max CL: 55ns @ 15V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
на замовлення 25674 шт:
термін постачання 21-31 дні (днів)
1253+16.92 грн
Мінімальне замовлення: 1253
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MM74HC74AN MM74HC74AN onsemi mm74hc74a-d.pdf description Description: IC FF D-TYPE DOUBLE 1BIT 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 94 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-MDIP
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Bits per Element: 1
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MBR20200CT MBR20200CT onsemi MBR20200CT(-1)%20MBRB20200CT%20N0763%20REV.A.pdf MBR2035CT SERIES_M2104.pdf mbr20100ct.pdf MBR20200CT-MBRF20200CT.pdf MBR%28F%2920200CT.pdf Description: DIODE ARR SCHOTT 200V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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FQP12N60 FQP12N60 onsemi FQP12N60.pdf Description: MOSFET N-CH 600V 10.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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FQI12N60TU FQI12N60TU onsemi FQB12N60%2C%20FQI12N60.pdf Description: MOSFET N-CH 600V 10.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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FQPF12N60 FQPF12N60 onsemi FQPF12N60_DS.pdf Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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FQA12N60 FQA12N60 onsemi FQA12N60.pdf Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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FQPF12N60T FQPF12N60T onsemi FQPF12N60_DS.pdf Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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FQPF9N50CT FQPF9N50CT onsemi FQPF9N50C.pdf Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
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FQPF9N50C FQPF9N50C onsemi FQPF9N50C.pdf Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
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FQPF9N50CF FQPF9N50CF onsemi fqpf9n50cf-d.pdf Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
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HLMPD150A HLMPD150A onsemi HLMP-D150A%2C155a%2CHLMPK150%2C155.pdf Description: LED RED DIFFUSED T-1 3/4 T/H
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole
Millicandela Rating: 3mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.6V
Lens Color: Red
Current - Test: 1mA
Viewing Angle: 65°
Height (Max): 8.89mm
Wavelength - Peak: 660nm
Supplier Device Package: T-1 3/4
Lens Transparency: Diffused
Lens Style: Round with Domed Top
Lens Size: 5mm, T-1 3/4
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LM339N LM339N onsemi lm339-d.pdf Description: IC COMPARATOR 4 GEN PUR 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: DTL, MOS, Open-Collector, TTL
Mounting Type: Through Hole
Number of Elements: 4
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-MDIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
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H11L1SM H11L1SM onsemi H11L3M-D.PDF Description: OPTOISO 4.17KV OPN COLL 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 20166 шт:
термін постачання 21-31 дні (днів)
5+78.89 грн
50+42.87 грн
100+39.45 грн
500+31.31 грн
1000+29.44 грн
2000+27.86 грн
5000+25.69 грн
10000+24.63 грн
Мінімальне замовлення: 5
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KSE13009FTU KSE13009FTU onsemi FAIRS19502-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR, 12A, 4
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
на замовлення 82328 шт:
термін постачання 21-31 дні (днів)
781+26.79 грн
Мінімальне замовлення: 781
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KSE13009FTU KSE13009FTU onsemi FAIRS19502-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 400V 12A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
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NGTB25N120FL2WG NGTB25N120FL2WG onsemi ngtb25n120fl2w-d.pdf Description: IGBT FIELD STOP 1200V 50A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 154 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 87ns/179ns
Switching Energy: 1.95mJ (on), 600µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
на замовлення 67040 шт:
термін постачання 21-31 дні (днів)
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MOC3022 MOC3022 onsemi MOC3021-23.pdf Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
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NVMFD040N10MCLT1G NVMFD040N10MCLT1G onsemi nvmfd040n10mcl-d.pdf Description: PTNG 100V LL SO8FL DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+43.88 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NVMFD040N10MCLT1G NVMFD040N10MCLT1G onsemi nvmfd040n10mcl-d.pdf Description: PTNG 100V LL SO8FL DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
3+145.70 грн
10+89.76 грн
100+60.71 грн
500+45.32 грн
Мінімальне замовлення: 3
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NVMFWD040N10MCLT1G NVMFWD040N10MCLT1G onsemi nvmfd040n10mcl-d.pdf Description: PTNG 100V LL SO8FL DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFWD040N10MCLT1G NVMFWD040N10MCLT1G onsemi nvmfd040n10mcl-d.pdf Description: PTNG 100V LL SO8FL DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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QRE1114GR onsemi QRE1113-D.PDF Description: REFLECTIVE OBJECT SENSOR
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Output Type: Phototransistor
Sensing Method: Reflective
Mounting Type: Surface Mount
Response Time: 20µs, 20µs
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
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SZMM5Z4V7T5G SZMM5Z4V7T5G onsemi MM5Z2V4T1-D.PDF Description: DIODE ZENER 4.7V 500MW SOD523
Tolerance: ±6.38%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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SZMM5Z4V7T5G SZMM5Z4V7T5G onsemi MM5Z2V4T1-D.PDF Description: DIODE ZENER 4.7V 500MW SOD523
Tolerance: ±6.38%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
на замовлення 7819 шт:
термін постачання 21-31 дні (днів)
13+26.56 грн
19+16.82 грн
100+11.34 грн
500+8.22 грн
1000+6.82 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
NTLUS3A90PZTBG NTLUS3A90PZTBG onsemi ntlus3a90pz-d.pdf Description: MOSFET P-CH 20V 2.6A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
1030+20.44 грн
Мінімальне замовлення: 1030
В кошику  од. на суму  грн.
NTLUS3A18PZTCG NTLUS3A18PZTCG onsemi ntlus3a18pz-d.pdf Description: MOSFET P-CH 20V 5.1A 6UDFN
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
на замовлення 8354 шт:
термін постачання 21-31 дні (днів)
1037+20.44 грн
Мінімальне замовлення: 1037
В кошику  од. на суму  грн.
NTLUS3A39PZTBG NTLUS3A39PZTBG onsemi ntlus3a39pz-d.pdf Description: MOSFET P-CH 20V 3.4A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 15 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
643+33.13 грн
Мінімальне замовлення: 643
В кошику  од. на суму  грн.
NTLUS3A90PZTAG NTLUS3A90PZTAG onsemi ntlus3a90pz-d.pdf Description: MOSFET P-CH 20V 2.6A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
на замовлення 900422 шт:
термін постачання 21-31 дні (днів)
1016+21.15 грн
Мінімальне замовлення: 1016
В кошику  од. на суму  грн.
LM324AN LM324AN onsemi LM324%28A%29%2C224%2C2902%28V%29%2CNCV2902.pdf Description: IC OPAMP GP 4 CIRCUIT 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: Standard
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.5mA
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 14-MDIP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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MM74HC541SJX MM74HC541SJX onsemi FAIRS38201-1.pdf?t.download=true&u=5oefqw Description: IC BUFFER NON-INVERT 6V 20-SOP
Packaging: Bulk
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
444+47.94 грн
Мінімальне замовлення: 444
В кошику  од. на суму  грн.
MM74HC541WMX MM74HC541WMX onsemi MM74HC541-D.PDF Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
1000+27.16 грн
2000+25.32 грн
3000+24.90 грн
5000+22.94 грн
7000+22.69 грн
10000+22.44 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
MM74HC541WMX MM74HC541WMX onsemi MM74HC541-D.PDF Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
на замовлення 22780 шт:
термін постачання 21-31 дні (днів)
6+56.35 грн
10+38.52 грн
25+34.66 грн
100+28.54 грн
250+26.64 грн
500+25.49 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2N5401 2N5401 onsemi 2N5400-01.pdf Description: TRANS PNP 150V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
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CAV93C66YE-GT3 CAV93C66YE-GT3 onsemi cav93c66-d.pdf Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 608210 шт:
термін постачання 21-31 дні (днів)
672+31.72 грн
Мінімальне замовлення: 672
В кошику  од. на суму  грн.
S1G S1G onsemi S1M-D.PDF Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 887140 шт:
термін постачання 21-31 дні (днів)
7500+3.63 грн
15000+3.43 грн
22500+3.41 грн
37500+3.03 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
S1G S1G onsemi S1M-D.PDF Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 890311 шт:
термін постачання 21-31 дні (днів)
16+20.12 грн
24+13.41 грн
100+8.70 грн
500+6.20 грн
1000+5.38 грн
2000+5.16 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
DF10M DF10M onsemi DF10M-D.pdf Description: BRIDGE RECT 1P 1KV 1.5A 4-DIP
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-DIP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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KA79L05AMTF KA79L05AMTF onsemi KA79LxxA.pdf Description: IC REG LINEAR -5V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): -30V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): -5V
PSRR: 60dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
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KA79L05AMTF KA79L05AMTF onsemi KA79LxxA.pdf Description: IC REG LINEAR -5V 100MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): -30V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): -5V
PSRR: 60dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
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1N5399 1N5399 onsemi 1N5391-5399_Rev08_2009.pdf Description: DIODE STANDARD 1000V 1.5A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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KST4403MTF KST4403MTF onsemi FAIRS20952-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 40V 0.6A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
на замовлення 195025 шт:
термін постачання 21-31 дні (днів)
7267+2.82 грн
Мінімальне замовлення: 7267
В кошику  од. на суму  грн.
GBPC2508W GBPC2508W onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
1+460.44 грн
50+235.92 грн
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1N754A 1N754A onsemi 1N746A-759A%2C4370A-4372A.pdf Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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1N754ATR 1N754ATR onsemi 1N746A-759A%2C4370A-4372A.pdf Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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1N754ATR 1N754ATR onsemi 1N746A-759A%2C4370A-4372A.pdf Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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74AC125PC 74AC125PC onsemi 74AC125%2C%2074ACT125.pdf Description: IC BUFFER NON-INVERT 6V 14-MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-MDIP
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74AC125SJ 74AC125SJ onsemi 74AC125%2C%2074ACT125.pdf Description: IC BUFFER NON-INVERT 6V 14-SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SOP
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74AC125SJX 74AC125SJX onsemi 74AC125%2C%2074ACT125.pdf Description: IC BUFFER NON-INVERT 6V 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SOP
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TL431ACZ TL431ACZ onsemi TL431%2CA.pdf Description: IC VREF SHUNT ADJ 1% TO92-3
Tolerance: ±1%
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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MBR1060 MBR1060 onsemi mbr1060-d.pdf Description: DIODE SCHOTTKY 60V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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FAN53740UCA1X
Виробник: onsemi
Description: IC REG MICRO PMIC 9WLCSP
Packaging: Cut Tape (CT)
на замовлення 830996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+156.16 грн
10+93.56 грн
25+78.88 грн
100+58.43 грн
250+50.77 грн
500+46.06 грн
1000+41.43 грн
Мінімальне замовлення: 3
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NTMS4802NR2G ntms4802n-d.pdf
NTMS4802NR2G
Виробник: onsemi
Description: MOSFET N-CH 30V 11.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 10V
Power Dissipation (Max): 910mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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MM74HC74ASJX mm74hc74a-d.pdf
MM74HC74ASJX
Виробник: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 94 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Bits per Element: 1
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MM74HC74ASJX mm74hc74a-d.pdf
MM74HC74ASJX
Виробник: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 94 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Bits per Element: 1
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1.5KE15CA ONSMS15463-1.pdf?t.download=true&u=5oefqw
1.5KE15CA
Виробник: onsemi
Description: TVS DIODE 12.8VWM 21.2VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 28150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
689+31.02 грн
Мінімальне замовлення: 689
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LM7805CT MC7800%28A%2CAE%29%2CNCV7800.pdf
LM7805CT
Виробник: onsemi
Description: IC REG LINEAR 5V 1.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 5V
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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2N2222A NPN%20Small%20Signal%20Amplifiers%2C%20Switches.pdf
Виробник: onsemi
Description: TRANS NPN 40V 0.8A TO-18
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
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MMBT2222A mmbt2222.pdf MMBT2222AS2S1P.pdf?rlkey=z653ewut8n4n3thiy3922tbal&st=0qc0cqlu&dl=0 MMBT2222A.pdf MMBT2222x.pdf MMBT2222A.pdf 5399_MMBT2222A%20SOT-23.PDF
MMBT2222A
Виробник: onsemi
Description: TRANS NPN 40V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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MMBT2222A mmbt2222.pdf MMBT2222AS2S1P.pdf?rlkey=z653ewut8n4n3thiy3922tbal&st=0qc0cqlu&dl=0 MMBT2222A.pdf MMBT2222x.pdf MMBT2222A.pdf 5399_MMBT2222A%20SOT-23.PDF
MMBT2222A
Виробник: onsemi
Description: TRANS NPN 40V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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NLV14069UBDTR2G mc14069ub-d.pdf
NLV14069UBDTR2G
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 4V ~ 12.5V
Input Logic Level - Low: 1V ~ 2.5V
Max Propagation Delay @ V, Max CL: 55ns @ 15V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
на замовлення 25674 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1253+16.92 грн
Мінімальне замовлення: 1253
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MM74HC74AN description mm74hc74a-d.pdf
MM74HC74AN
Виробник: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 94 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-MDIP
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Bits per Element: 1
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MBR20200CT MBR20200CT(-1)%20MBRB20200CT%20N0763%20REV.A.pdf MBR2035CT SERIES_M2104.pdf mbr20100ct.pdf MBR20200CT-MBRF20200CT.pdf MBR%28F%2920200CT.pdf
MBR20200CT
Виробник: onsemi
Description: DIODE ARR SCHOTT 200V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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FQP12N60 FQP12N60.pdf
FQP12N60
Виробник: onsemi
Description: MOSFET N-CH 600V 10.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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FQI12N60TU FQB12N60%2C%20FQI12N60.pdf
FQI12N60TU
Виробник: onsemi
Description: MOSFET N-CH 600V 10.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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FQPF12N60 FQPF12N60_DS.pdf
FQPF12N60
Виробник: onsemi
Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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FQA12N60 FQA12N60.pdf
FQA12N60
Виробник: onsemi
Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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FQPF12N60T FQPF12N60_DS.pdf
FQPF12N60T
Виробник: onsemi
Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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FQPF9N50CT FQPF9N50C.pdf
FQPF9N50CT
Виробник: onsemi
Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
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FQPF9N50C FQPF9N50C.pdf
FQPF9N50C
Виробник: onsemi
Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
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FQPF9N50CF fqpf9n50cf-d.pdf
FQPF9N50CF
Виробник: onsemi
Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
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HLMPD150A HLMP-D150A%2C155a%2CHLMPK150%2C155.pdf
HLMPD150A
Виробник: onsemi
Description: LED RED DIFFUSED T-1 3/4 T/H
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole
Millicandela Rating: 3mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.6V
Lens Color: Red
Current - Test: 1mA
Viewing Angle: 65°
Height (Max): 8.89mm
Wavelength - Peak: 660nm
Supplier Device Package: T-1 3/4
Lens Transparency: Diffused
Lens Style: Round with Domed Top
Lens Size: 5mm, T-1 3/4
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LM339N lm339-d.pdf
LM339N
Виробник: onsemi
Description: IC COMPARATOR 4 GEN PUR 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: DTL, MOS, Open-Collector, TTL
Mounting Type: Through Hole
Number of Elements: 4
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-MDIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
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H11L1SM H11L3M-D.PDF
H11L1SM
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SMD
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 20166 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.89 грн
50+42.87 грн
100+39.45 грн
500+31.31 грн
1000+29.44 грн
2000+27.86 грн
5000+25.69 грн
10000+24.63 грн
Мінімальне замовлення: 5
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KSE13009FTU FAIRS19502-1.pdf?t.download=true&u=5oefqw
KSE13009FTU
Виробник: onsemi
Description: POWER BIPOLAR TRANSISTOR, 12A, 4
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
на замовлення 82328 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
781+26.79 грн
Мінімальне замовлення: 781
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KSE13009FTU FAIRS19502-1.pdf?t.download=true&u=5oefqw
KSE13009FTU
Виробник: onsemi
Description: TRANS NPN 400V 12A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
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NGTB25N120FL2WG ngtb25n120fl2w-d.pdf
NGTB25N120FL2WG
Виробник: onsemi
Description: IGBT FIELD STOP 1200V 50A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 154 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 87ns/179ns
Switching Energy: 1.95mJ (on), 600µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
на замовлення 67040 шт:
термін постачання 21-31 дні (днів)
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MOC3022 MOC3021-23.pdf
MOC3022
Виробник: onsemi
Description: OPTOISOLTR 5.3KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
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NVMFD040N10MCLT1G nvmfd040n10mcl-d.pdf
NVMFD040N10MCLT1G
Виробник: onsemi
Description: PTNG 100V LL SO8FL DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+43.88 грн
Мінімальне замовлення: 1500
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NVMFD040N10MCLT1G nvmfd040n10mcl-d.pdf
NVMFD040N10MCLT1G
Виробник: onsemi
Description: PTNG 100V LL SO8FL DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+145.70 грн
10+89.76 грн
100+60.71 грн
500+45.32 грн
Мінімальне замовлення: 3
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NVMFWD040N10MCLT1G nvmfd040n10mcl-d.pdf
NVMFWD040N10MCLT1G
Виробник: onsemi
Description: PTNG 100V LL SO8FL DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFWD040N10MCLT1G nvmfd040n10mcl-d.pdf
NVMFWD040N10MCLT1G
Виробник: onsemi
Description: PTNG 100V LL SO8FL DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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QRE1114GR QRE1113-D.PDF
Виробник: onsemi
Description: REFLECTIVE OBJECT SENSOR
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Output Type: Phototransistor
Sensing Method: Reflective
Mounting Type: Surface Mount
Response Time: 20µs, 20µs
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
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SZMM5Z4V7T5G MM5Z2V4T1-D.PDF
SZMM5Z4V7T5G
Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD523
Tolerance: ±6.38%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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SZMM5Z4V7T5G MM5Z2V4T1-D.PDF
SZMM5Z4V7T5G
Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD523
Tolerance: ±6.38%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
на замовлення 7819 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.56 грн
19+16.82 грн
100+11.34 грн
500+8.22 грн
1000+6.82 грн
Мінімальне замовлення: 13
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NTLUS3A90PZTBG ntlus3a90pz-d.pdf
NTLUS3A90PZTBG
Виробник: onsemi
Description: MOSFET P-CH 20V 2.6A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1030+20.44 грн
Мінімальне замовлення: 1030
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NTLUS3A18PZTCG ntlus3a18pz-d.pdf
NTLUS3A18PZTCG
Виробник: onsemi
Description: MOSFET P-CH 20V 5.1A 6UDFN
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
на замовлення 8354 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1037+20.44 грн
Мінімальне замовлення: 1037
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NTLUS3A39PZTBG ntlus3a39pz-d.pdf
NTLUS3A39PZTBG
Виробник: onsemi
Description: MOSFET P-CH 20V 3.4A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 15 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
643+33.13 грн
Мінімальне замовлення: 643
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NTLUS3A90PZTAG ntlus3a90pz-d.pdf
NTLUS3A90PZTAG
Виробник: onsemi
Description: MOSFET P-CH 20V 2.6A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
на замовлення 900422 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1016+21.15 грн
Мінімальне замовлення: 1016
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LM324AN LM324%28A%29%2C224%2C2902%28V%29%2CNCV2902.pdf
LM324AN
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: Standard
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.5mA
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 14-MDIP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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MM74HC541SJX FAIRS38201-1.pdf?t.download=true&u=5oefqw
MM74HC541SJX
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 20-SOP
Packaging: Bulk
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOP
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
444+47.94 грн
Мінімальне замовлення: 444
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MM74HC541WMX MM74HC541-D.PDF
MM74HC541WMX
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+27.16 грн
2000+25.32 грн
3000+24.90 грн
5000+22.94 грн
7000+22.69 грн
10000+22.44 грн
Мінімальне замовлення: 1000
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MM74HC541WMX MM74HC541-D.PDF
MM74HC541WMX
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
на замовлення 22780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.35 грн
10+38.52 грн
25+34.66 грн
100+28.54 грн
250+26.64 грн
500+25.49 грн
Мінімальне замовлення: 6
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2N5401 2N5400-01.pdf
2N5401
Виробник: onsemi
Description: TRANS PNP 150V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
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CAV93C66YE-GT3 cav93c66-d.pdf
CAV93C66YE-GT3
Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 608210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
672+31.72 грн
Мінімальне замовлення: 672
В кошику  од. на суму  грн.
S1G S1M-D.PDF
S1G
Виробник: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 887140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+3.63 грн
15000+3.43 грн
22500+3.41 грн
37500+3.03 грн
Мінімальне замовлення: 7500
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S1G S1M-D.PDF
S1G
Виробник: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 890311 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+20.12 грн
24+13.41 грн
100+8.70 грн
500+6.20 грн
1000+5.38 грн
2000+5.16 грн
Мінімальне замовлення: 16
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DF10M DF10M-D.pdf
DF10M
Виробник: onsemi
Description: BRIDGE RECT 1P 1KV 1.5A 4-DIP
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-DIP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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KA79L05AMTF KA79LxxA.pdf
KA79L05AMTF
Виробник: onsemi
Description: IC REG LINEAR -5V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): -30V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): -5V
PSRR: 60dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
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KA79L05AMTF KA79LxxA.pdf
KA79L05AMTF
Виробник: onsemi
Description: IC REG LINEAR -5V 100MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): -30V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): -5V
PSRR: 60dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
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1N5399 1N5391-5399_Rev08_2009.pdf
1N5399
Виробник: onsemi
Description: DIODE STANDARD 1000V 1.5A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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KST4403MTF FAIRS20952-1.pdf?t.download=true&u=5oefqw
KST4403MTF
Виробник: onsemi
Description: TRANS PNP 40V 0.6A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
на замовлення 195025 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7267+2.82 грн
Мінімальне замовлення: 7267
В кошику  од. на суму  грн.
GBPC2508W gbpc3510-d.pdf
GBPC2508W
Виробник: onsemi
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+460.44 грн
50+235.92 грн
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1N754A 1N746A-759A%2C4370A-4372A.pdf
1N754A
Виробник: onsemi
Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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1N754ATR 1N746A-759A%2C4370A-4372A.pdf
1N754ATR
Виробник: onsemi
Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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1N754ATR 1N746A-759A%2C4370A-4372A.pdf
1N754ATR
Виробник: onsemi
Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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74AC125PC 74AC125%2C%2074ACT125.pdf
74AC125PC
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 14-MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-MDIP
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74AC125SJ 74AC125%2C%2074ACT125.pdf
74AC125SJ
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 14-SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SOP
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74AC125SJX 74AC125%2C%2074ACT125.pdf
74AC125SJX
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SOP
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TL431ACZ TL431%2CA.pdf
TL431ACZ
Виробник: onsemi
Description: IC VREF SHUNT ADJ 1% TO92-3
Tolerance: ±1%
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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MBR1060 mbr1060-d.pdf
MBR1060
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
товару немає в наявності
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