| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MM74HCT573WMX | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; TTL; 4.5÷5.5VDC; SMD; SO20; HCT; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SO20 Operating temperature: -40...85°C Family: HCT Kind of output: 3-state Kind of package: reel; tape Quiescent current: 160µA Manufacturer series: HCT Trigger: level-triggered |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MM74HCT573MTC | ONSEMI |
Category: LatchesDescription: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS; TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20WB Operating temperature: -55...125°C Family: HCT Kind of output: 3-state Kind of package: tube Manufacturer series: HCT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HCT573ADTR2G | ONSEMI |
Category: LatchesDescription: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: latch transparent Number of channels: 8 Technology: CMOS; TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Family: HCT Kind of output: 3-state Kind of package: reel; tape Quiescent current: 160µA Manufacturer series: HCT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| MM74HCT573MTCX | ONSEMI |
Category: LatchesDescription: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS; TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SO20WB Operating temperature: -55...125°C Family: HCT Kind of output: 3-state Kind of package: reel; tape Manufacturer series: HCT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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4N26SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Collector-emitter voltage: 30V Case: Gull wing 6 CTR@If: 20%@10mA Turn-on time: 2µs Turn-off time: 2µs |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SBC856BDW1T3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5227BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZMMSZ5227BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ES2B | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Reverse recovery time: 20ns Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 0.9V Power dissipation: 1.66W Features of semiconductor devices: fast switching Max. off-state voltage: 0.1kV Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.35mA Case: SMB Capacitance: 18pF Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC858ALT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Frequency: 100MHz Current gain: 125...250 Kind of package: reel; tape |
на замовлення 4133 шт: термін постачання 14-30 дні (днів) |
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| BC858AWT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Mounting: SMD Frequency: 100MHz Current gain: 125...250 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR360G | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 1.08V Max. forward impulse current: 80A Kind of package: bulk |
на замовлення 434 шт: термін постачання 14-30 дні (днів) |
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DF02S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1.5A Case: SDIP 4L Electrical mounting: SMT Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 1472 шт: термін постачання 14-30 дні (днів) |
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MM74HCT138MX | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; CMOS; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO16 Manufacturer series: HCT Family: HCT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Quiescent current: 160µA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HCT138ADR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of inputs: 6 Mounting: SMD Case: SOIC16 Family: HCT Operating temperature: -55...125°C Kind of package: reel; tape Number of channels: 1 Supply voltage: 2...6V DC Manufacturer series: HCT Technology: CMOS; TTL |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HCT138ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of inputs: 6 Mounting: SMD Case: TSSOP16 Family: HCT Operating temperature: -55...125°C Kind of package: reel; tape Number of channels: 1 Supply voltage: 2...6V DC Manufacturer series: HCT Technology: CMOS; TTL |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MM74HCT138M | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; TTL; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Number of channels: 1 Number of inputs: 3 Technology: TTL Mounting: SMD Case: SO16 Manufacturer series: HCT Family: HCT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS6375 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Type of transistor: P-MOSFET Drain-source voltage: -20V Drain current: -8A Gate charge: 36nC On-state resistance: 39mΩ Power dissipation: 2.5W Gate-source voltage: ±8V Polarisation: unipolar |
на замовлення 758 шт: термін постачання 14-30 дні (днів) |
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| NSR20F40NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; 0603; SMD; 40V; 2A; reel,tape Mounting: SMD Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Case - inch: 0603 Case - mm: 1608 Max. forward impulse current: 28A Max. forward voltage: 0.55V Max. off-state voltage: 40V |
на замовлення 4900 шт: термін постачання 14-30 дні (днів) |
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FDC634P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6 Mounting: SMD On-state resistance: 0.13Ω Power dissipation: 1.6W Gate-source voltage: ±8V Kind of channel: enhancement Type of transistor: P-MOSFET Technology: PowerTrench® Kind of package: reel; tape Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Gate charge: 10nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
| NSV20200LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 2A; 0.71W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Frequency: 100MHz Polarisation: bipolar Type of transistor: PNP Kind of package: reel; tape Power dissipation: 0.71W Collector current: 2A Collector-emitter voltage: 20V Current gain: 250 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSV20200DMTWTBG | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 20V; 2A; 2.1W; WDFN6 Mounting: SMD Case: WDFN6 Frequency: 155MHz Polarisation: bipolar Type of transistor: PNP x2 Kind of package: reel; tape Power dissipation: 2.1W Collector current: 2A Collector-emitter voltage: 20V Current gain: 100 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C27LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 27V; SMD; SOT23; single diode; reel,tape; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C |
на замовлення 2455 шт: термін постачання 14-30 дні (днів) |
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MUN5211DW1T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 60 |
на замовлення 23555 шт: термін постачання 14-30 дні (днів) |
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SMUN5211DW1T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC847BS | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.21W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.21W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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S3M | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 3A; 2.5us; SMC; Ufmax: 1.2V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Reverse recovery time: 2.5µs Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.2V Max. forward impulse current: 100A Kind of package: reel; tape Capacitance: 60pF Power dissipation: 2.6W |
на замовлення 2027 шт: термін постачання 14-30 дні (днів) |
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| NRVS3MB | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.15V Max. forward impulse current: 80A Kind of package: reel; tape Reverse recovery time: 1.5µs Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FXLA104UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; UMLP16; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Number of channels: 4 Supply voltage: 1.1...3.6V DC Mounting: SMD Case: UMLP16 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 4 Number of outputs: 4 Integrated circuit features: auto-direction sensing Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDS4935A | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1090 шт: термін постачання 14-30 дні (днів) |
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| BZX79C9V1-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 9.1V; Ammo Pack; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2V7002KT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
на замовлення 5567 шт: термін постачання 14-30 дні (днів) |
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NTJD5121NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.295A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 15197 шт: термін постачання 14-30 дні (днів) |
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MC74ACT244DTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Case: TSSOP20 Operating temperature: -40...85°C Technology: CMOS Number of channels: 8 Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: ACT Kind of output: 3-state |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74ACT244DWR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Case: SOIC20 Operating temperature: -40...85°C Kind of package: reel; tape Technology: TTL Family: ACT Number of channels: 8 Mounting: SMD Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of output: 3-state |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PZTA28 | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.8A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Kind of transistor: Darlington |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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PZTA29 | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Kind of transistor: Darlington |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SZMMSZ5245BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 15V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC14016BDR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; SPST-NO; Ch: 4; 30uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Case: SOIC14 Supply voltage: 3...18V Mounting: SMD Operating temperature: -55...125°C Quiescent current: 30µA Output configuration: SPST-NO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSR20F30NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape Case: DSN0603-2 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.48V Load current: 2A Max. load current: 4A Max. off-state voltage: 30V Max. forward impulse current: 28A |
на замовлення 835 шт: термін постачання 14-30 дні (днів) |
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| NSR20F20NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DSN0603-2; SMD; 20V; 2A; reel,tape Case: DSN0603-2 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Load current: 2A Max. forward voltage: 0.45V Max. off-state voltage: 20V Max. load current: 4A Max. forward impulse current: 28A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSR2030QMUTWG | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 30V; If: 2A; Ifsm: 12.5A Electrical mounting: SMT Type of bridge rectifier: single-phase Case: uDFN4 Kind of package: reel; tape Features of semiconductor devices: Schottky Load current: 2A Max. forward voltage: 0.65V Max. off-state voltage: 30V Max. forward impulse current: 12.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NJW0281G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 15A; 150W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 150W Case: TO3P Current gain: 75...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
на замовлення 318 шт: термін постачання 14-30 дні (днів) |
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| MM3Z8V2B | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 8.2V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 8.2V Mounting: SMD Tolerance: ±2% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3ZxxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFWS016N06CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 18W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 15.6mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 226A |
товару немає в наявності |
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| FGH75T65UPD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||||
| FGH75T65UPD-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
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| FGH75T65UPD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65MQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65LQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 793nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65MQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 145nC Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||||
|
FQPF7P20 | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.3A Pulsed drain current: -20.8A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||||
|
FQPF5N90 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||||
|
FQPF2N80 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FQPF5N40 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 1.9A; Idm: 12A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||||
|
FQPF13N06L | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.1A Pulsed drain current: 40A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 6.4nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FQPF16N25C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.8A Pulsed drain current: 62.4A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 53.5nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||||
|
FQPF19N20 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 48A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 7.5A Pulsed drain current: 48A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||||
|
FQPF45N15V2 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 31A Pulsed drain current: 180A Power dissipation: 66W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||||
|
FQPF6N80CT | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 22A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
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| MM74HCT573WMX |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; TTL; 4.5÷5.5VDC; SMD; SO20; HCT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Family: HCT
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Manufacturer series: HCT
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; TTL; 4.5÷5.5VDC; SMD; SO20; HCT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Family: HCT
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Manufacturer series: HCT
Trigger: level-triggered
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| MM74HCT573MTC |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Family: HCT
Kind of output: 3-state
Kind of package: tube
Manufacturer series: HCT
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Family: HCT
Kind of output: 3-state
Kind of package: tube
Manufacturer series: HCT
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| MC74HCT573ADTR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HCT
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Manufacturer series: HCT
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 4.5÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HCT
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Manufacturer series: HCT
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MM74HCT573MTCX |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Family: HCT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: HCT
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Family: HCT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: HCT
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 4N26SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 30V
Case: Gull wing 6
CTR@If: 20%@10mA
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 30V
Case: Gull wing 6
CTR@If: 20%@10mA
Turn-on time: 2µs
Turn-off time: 2µs
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| SBC856BDW1T3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| MMSZ5227BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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| SZMMSZ5227BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| ES2B |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Reverse recovery time: 20ns
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.9V
Power dissipation: 1.66W
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.1kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.35mA
Case: SMB
Capacitance: 18pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Reverse recovery time: 20ns
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.9V
Power dissipation: 1.66W
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.1kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.35mA
Case: SMB
Capacitance: 18pF
Type of diode: rectifying
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| BC858ALT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 125...250
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 125...250
Kind of package: reel; tape
на замовлення 4133 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 107+ | 3.87 грн |
| 187+ | 2.21 грн |
| 500+ | 1.56 грн |
| 1000+ | 1.36 грн |
| 3000+ | 1.13 грн |
| BC858AWT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Frequency: 100MHz
Current gain: 125...250
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Frequency: 100MHz
Current gain: 125...250
Kind of package: reel; tape
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| MBR360G |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 1.08V
Max. forward impulse current: 80A
Kind of package: bulk
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 1.08V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 1.08V
Max. forward impulse current: 80A
Kind of package: bulk
на замовлення 434 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 40.80 грн |
| 14+ | 29.48 грн |
| 16+ | 25.86 грн |
| 50+ | 19.27 грн |
| 100+ | 17.05 грн |
| DF02S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Case: SDIP 4L
Electrical mounting: SMT
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Case: SDIP 4L
Electrical mounting: SMT
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 1472 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 62.09 грн |
| 12+ | 34.43 грн |
| 50+ | 27.26 грн |
| 100+ | 24.71 грн |
| 200+ | 22.32 грн |
| 250+ | 21.66 грн |
| 500+ | 19.44 грн |
| 1000+ | 17.54 грн |
| MM74HCT138MX |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO16
Manufacturer series: HCT
Family: HCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 160µA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO16
Manufacturer series: HCT
Family: HCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 160µA
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| MC74HCT138ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 6
Mounting: SMD
Case: SOIC16
Family: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 2...6V DC
Manufacturer series: HCT
Technology: CMOS; TTL
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 6
Mounting: SMD
Case: SOIC16
Family: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 2...6V DC
Manufacturer series: HCT
Technology: CMOS; TTL
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| MC74HCT138ADTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 6
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 2...6V DC
Manufacturer series: HCT
Technology: CMOS; TTL
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 6
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 2...6V DC
Manufacturer series: HCT
Technology: CMOS; TTL
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| MM74HCT138M |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; TTL; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Number of channels: 1
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SO16
Manufacturer series: HCT
Family: HCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; TTL; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Number of channels: 1
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SO16
Manufacturer series: HCT
Family: HCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
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| FDS6375 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -8A
Gate charge: 36nC
On-state resistance: 39mΩ
Power dissipation: 2.5W
Gate-source voltage: ±8V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -8A
Gate charge: 36nC
On-state resistance: 39mΩ
Power dissipation: 2.5W
Gate-source voltage: ±8V
Polarisation: unipolar
на замовлення 758 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 71.84 грн |
| 8+ | 56.17 грн |
| 10+ | 49.25 грн |
| 50+ | 35.00 грн |
| NSR20F40NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0603; SMD; 40V; 2A; reel,tape
Mounting: SMD
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Case - inch: 0603
Case - mm: 1608
Max. forward impulse current: 28A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0603; SMD; 40V; 2A; reel,tape
Mounting: SMD
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Case - inch: 0603
Case - mm: 1608
Max. forward impulse current: 28A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
на замовлення 4900 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.57 грн |
| 14+ | 30.31 грн |
| 17+ | 25.53 грн |
| 25+ | 20.10 грн |
| 100+ | 17.21 грн |
| FDC634P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Mounting: SMD
On-state resistance: 0.13Ω
Power dissipation: 1.6W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 10nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Mounting: SMD
On-state resistance: 0.13Ω
Power dissipation: 1.6W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 10nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NSV20200LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 0.71W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Power dissipation: 0.71W
Collector current: 2A
Collector-emitter voltage: 20V
Current gain: 250
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 0.71W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Power dissipation: 0.71W
Collector current: 2A
Collector-emitter voltage: 20V
Current gain: 250
Application: automotive industry
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| NSV20200DMTWTBG |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 2A; 2.1W; WDFN6
Mounting: SMD
Case: WDFN6
Frequency: 155MHz
Polarisation: bipolar
Type of transistor: PNP x2
Kind of package: reel; tape
Power dissipation: 2.1W
Collector current: 2A
Collector-emitter voltage: 20V
Current gain: 100
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 2A; 2.1W; WDFN6
Mounting: SMD
Case: WDFN6
Frequency: 155MHz
Polarisation: bipolar
Type of transistor: PNP x2
Kind of package: reel; tape
Power dissipation: 2.1W
Collector current: 2A
Collector-emitter voltage: 20V
Current gain: 100
Application: automotive industry
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| BZX84C27LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
на замовлення 2455 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.21 грн |
| 125+ | 3.29 грн |
| 248+ | 1.66 грн |
| 500+ | 1.31 грн |
| MUN5211DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 60
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 60
на замовлення 23555 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.76 грн |
| 57+ | 7.25 грн |
| 65+ | 6.34 грн |
| 112+ | 3.71 грн |
| 500+ | 2.70 грн |
| 1000+ | 2.39 грн |
| 1500+ | 2.24 грн |
| 3000+ | 2.03 грн |
| 6000+ | 1.87 грн |
| SMUN5211DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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| BC847BS |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.21W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.21W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.21W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.21W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5 шт
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| S3M |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 2.5us; SMC; Ufmax: 1.2V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 2.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.2V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 60pF
Power dissipation: 2.6W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 2.5us; SMC; Ufmax: 1.2V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 2.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.2V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 60pF
Power dissipation: 2.6W
на замовлення 2027 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.82 грн |
| 19+ | 21.74 грн |
| 50+ | 16.80 грн |
| 100+ | 15.07 грн |
| 250+ | 13.01 грн |
| 500+ | 11.69 грн |
| 1000+ | 11.37 грн |
| NRVS3MB |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Application: automotive industry
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| FXLA104UMX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; UMLP16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Supply voltage: 1.1...3.6V DC
Mounting: SMD
Case: UMLP16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 4
Integrated circuit features: auto-direction sensing
Frequency: 140MHz
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; UMLP16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Supply voltage: 1.1...3.6V DC
Mounting: SMD
Case: UMLP16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 4
Integrated circuit features: auto-direction sensing
Frequency: 140MHz
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| FDS4935A |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1090 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 106.43 грн |
| 6+ | 77.91 грн |
| 10+ | 67.37 грн |
| 50+ | 47.19 грн |
| 100+ | 40.93 грн |
| 125+ | 39.28 грн |
| 500+ | 37.47 грн |
| BZX79C9V1-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; Ammo Pack; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; Ammo Pack; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
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| 2V7002KT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
на замовлення 5567 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.53 грн |
| 56+ | 7.41 грн |
| 78+ | 5.30 грн |
| 100+ | 4.53 грн |
| 500+ | 3.06 грн |
| 1000+ | 2.78 грн |
| 1500+ | 2.59 грн |
| 3000+ | 2.28 грн |
| NTJD5121NT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.295A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.295A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 15197 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 15.96 грн |
| 38+ | 10.87 грн |
| 47+ | 8.83 грн |
| 55+ | 7.51 грн |
| 100+ | 6.40 грн |
| 250+ | 5.26 грн |
| 500+ | 4.59 грн |
| 1000+ | 4.04 грн |
| 3000+ | 3.38 грн |
| MC74ACT244DTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Case: TSSOP20
Operating temperature: -40...85°C
Technology: CMOS
Number of channels: 8
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: ACT
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Case: TSSOP20
Operating temperature: -40...85°C
Technology: CMOS
Number of channels: 8
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: ACT
Kind of output: 3-state
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| MC74ACT244DWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Case: SOIC20
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: TTL
Family: ACT
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Case: SOIC20
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: TTL
Family: ACT
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of output: 3-state
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| PZTA28 |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
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Мінімальне замовлення: 4000 шт
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| PZTA29 |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
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Мінімальне замовлення: 4000 шт
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| SZMMSZ5245BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| MC14016BDR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; SPST-NO; Ch: 4; 30uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Case: SOIC14
Supply voltage: 3...18V
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 30µA
Output configuration: SPST-NO
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; SPST-NO; Ch: 4; 30uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Case: SOIC14
Supply voltage: 3...18V
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 30µA
Output configuration: SPST-NO
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| NSR20F30NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Case: DSN0603-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.48V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 30V
Max. forward impulse current: 28A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Case: DSN0603-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.48V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 30V
Max. forward impulse current: 28A
на замовлення 835 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 40.80 грн |
| 18+ | 23.88 грн |
| 50+ | 17.79 грн |
| NSR20F20NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 20V; 2A; reel,tape
Case: DSN0603-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.45V
Max. off-state voltage: 20V
Max. load current: 4A
Max. forward impulse current: 28A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 20V; 2A; reel,tape
Case: DSN0603-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.45V
Max. off-state voltage: 20V
Max. load current: 4A
Max. forward impulse current: 28A
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| NSR2030QMUTWG |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 2A; Ifsm: 12.5A
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: uDFN4
Kind of package: reel; tape
Features of semiconductor devices: Schottky
Load current: 2A
Max. forward voltage: 0.65V
Max. off-state voltage: 30V
Max. forward impulse current: 12.5A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 2A; Ifsm: 12.5A
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: uDFN4
Kind of package: reel; tape
Features of semiconductor devices: Schottky
Load current: 2A
Max. forward voltage: 0.65V
Max. off-state voltage: 30V
Max. forward impulse current: 12.5A
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| NJW0281G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 318 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 216.60 грн |
| 10+ | 163.07 грн |
| 20+ | 141.66 грн |
| 30+ | 134.24 грн |
| MM3Z8V2B |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
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| NVMFWS016N06CT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
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| FGH75T65UPD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
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| FGH75T65UPD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
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| FGH75T65UPD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
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| FGHL75T65MQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
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Мінімальне замовлення: 450 шт
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| FGHL75T65LQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
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Мінімальне замовлення: 450 шт
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| FGHL75T65MQD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
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| FQPF7P20 |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF5N90 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF2N80 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF5N40 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.9A; Idm: 12A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.9A; Idm: 12A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF13N06L |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.1A
Pulsed drain current: 40A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.1A
Pulsed drain current: 40A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF16N25C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF19N20 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 48A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7.5A
Pulsed drain current: 48A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 48A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7.5A
Pulsed drain current: 48A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF45N15V2 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FQPF6N80CT |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.

























