| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MC79M12BTG | ONSEMI |
 Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -12V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -12V Output current: 0.5A Case: TO220AB Mounting: THT Operating temperature: -40...125°C Number of channels: 1 Heatsink thickness: 0.508...0.61mm Voltage drop: 1.3V Kind of package: tube Tolerance: ±4% Manufacturer series: MC79M00 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
MC79M12CDTRKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -12V Output current: 0.5A Case: DPAK Mounting: SMD Operating temperature: 0...125°C Number of channels: 1 Voltage drop: 1.1V Kind of package: reel; tape Tolerance: ±4% Manufacturer series: MC79M00 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MAX809TTRG | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit Type of integrated circuit: supervisor circuit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
MC7905ACD2TR4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -5V; 1A; D2PAK; SMD; MC7900 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.3V Output voltage: -5V Output current: 1A Case: D2PAK Mounting: SMD Manufacturer series: MC7900 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| NTMFSC011N08M7 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 61A Pulsed drain current: 180A Power dissipation: 31.2W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| KSB1151YSTU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO Mounting: THT Case: TO126ISO Power dissipation: 1.3W Type of transistor: PNP Collector current: 5A Pulsed collector current: 8A Kind of package: tube Collector-emitter voltage: 60V Current gain: 160...320 Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| KSB1151YS | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO Mounting: THT Case: TO126ISO Power dissipation: 1.3W Type of transistor: PNP Collector current: 5A Pulsed collector current: 8A Kind of package: bulk Collector-emitter voltage: 60V Current gain: 160...320 Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
|
FCP104N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 357W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 82nC Pulsed drain current: 111A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
NTZD3152PT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.43A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.7nC |
на замовлення 1830 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
74ACT32MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; ACT Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
74ACT32SCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
MC74ACT32DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
MC74ACT32DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
MMBT2369LT1G | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 20...120 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMMBT2369ALT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 40...120 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
LM339N | ONSEMI |
Category: THT comparators Description: IC: comparator; universal; Cmp: 4; 2÷36V; THT; DIP14; tube; 150nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Operating voltage: 2...36V Mounting: THT Case: DIP14 Operating temperature: 0...70°C Input offset voltage: 9mV Kind of package: tube Kind of output: open collector Input offset current: 150nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
MMBT2907A | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
NCP51561BBDWR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO16 Output current: -9...4.5A Number of channels: 2 Supply voltage: 3...5V DC; 9.5...30V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 19ns Pulse fall time: 19ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
NCP51561BADWR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO16 Output current: -9...4.5A Number of channels: 2 Supply voltage: 3...5V DC; 9.5...30V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 19ns Pulse fall time: 19ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| NZ8F5V1MX2WT5G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; X2DFNW2; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: X2DFNW2 Semiconductor structure: single diode Manufacturer series: NZ8F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
|
MMBT2222A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 1W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
SS26 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 60V Kind of package: reel; tape Case: SMB Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
SS26 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W Mounting: SMD Max. forward voltage: 0.7V Power dissipation: 1.3W Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 60V Kind of package: reel; tape Case: SMB Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 +1 |
DF08M | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1.5A Max. forward impulse current: 50A Case: MDIP4L Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
DF08M | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1.5A Max. forward impulse current: 50A Case: MDIP4L Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
SZMM3Z8V2ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 8.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G Application: automotive industry |
на замовлення 2088 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
SZMM3Z8V2T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
KSP55TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Current gain: 50 Mounting: THT Kind of package: Ammo Pack Frequency: 105MHz |
на замовлення 1990 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
ES3J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 1.66W Capacitance: 45pF |
на замовлення 2427 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
MM74HCT164M | ONSEMI |
Category: Shift registers Description: IC: digital; 8bit,shift register,serial input,parallel out Manufacturer series: HCT Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: digital Case: SO14 Supply voltage: 4.5...5.5V DC Number of channels: 1 Family: HCT Kind of integrated circuit: 8bit; parallel out; serial input; shift register |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
MM74HCT164MX | ONSEMI |
Category: Shift registers Description: IC: digital; 8bit,shift register,serial input,parallel out Manufacturer series: HCT Operating temperature: -40...85°C Mounting: SMD Kind of package: reel; tape Type of integrated circuit: digital Case: SO14 Supply voltage: 4.5...5.5V DC Quiescent current: 160µA Technology: CMOS; TTL Number of channels: 1 Family: HCT Kind of integrated circuit: 8bit; parallel out; serial input; shift register |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MBRF20L60CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.69V Max. forward impulse current: 0.24kA Kind of package: tube Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. |
| MC79M12BTG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Voltage drop: 1.3V
Kind of package: tube
Tolerance: ±4%
Manufacturer series: MC79M00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Voltage drop: 1.3V
Kind of package: tube
Tolerance: ±4%
Manufacturer series: MC79M00
товару немає в наявності
В кошику
од. на суму грн.
| MC79M12CDTRKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.1V
Kind of package: reel; tape
Tolerance: ±4%
Manufacturer series: MC79M00
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.1V
Kind of package: reel; tape
Tolerance: ±4%
Manufacturer series: MC79M00
товару немає в наявності
В кошику
од. на суму грн.
| MAX809TTRG |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
товару немає в наявності
В кошику
од. на суму грн.
| MC7905ACD2TR4G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; D2PAK; SMD; MC7900
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7900
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; D2PAK; SMD; MC7900
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7900
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| NTMFSC011N08M7 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| KSB1151YSTU |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Mounting: THT
Case: TO126ISO
Power dissipation: 1.3W
Type of transistor: PNP
Collector current: 5A
Pulsed collector current: 8A
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Mounting: THT
Case: TO126ISO
Power dissipation: 1.3W
Type of transistor: PNP
Collector current: 5A
Pulsed collector current: 8A
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| KSB1151YS |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Mounting: THT
Case: TO126ISO
Power dissipation: 1.3W
Type of transistor: PNP
Collector current: 5A
Pulsed collector current: 8A
Kind of package: bulk
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Mounting: THT
Case: TO126ISO
Power dissipation: 1.3W
Type of transistor: PNP
Collector current: 5A
Pulsed collector current: 8A
Kind of package: bulk
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| FCP104N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Pulsed drain current: 111A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Pulsed drain current: 111A
товару немає в наявності
В кошику
од. на суму грн.
| NTZD3152PT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
на замовлення 1830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.64 грн |
| 30+ | 13.91 грн |
| 37+ | 11.08 грн |
| 100+ | 7.93 грн |
| 74ACT32MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
товару немає в наявності
В кошику
од. на суму грн.
| 74ACT32SCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
товару немає в наявності
В кошику
од. на суму грн.
| MC74ACT32DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
товару немає в наявності
В кошику
од. на суму грн.
| MC74ACT32DTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
товару немає в наявності
В кошику
од. на суму грн.
| MMBT2369LT1G | |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SMMBT2369ALT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| LM339N |
|
Виробник: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 4; 2÷36V; THT; DIP14; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 2...36V
Mounting: THT
Case: DIP14
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Kind of output: open collector
Input offset current: 150nA
Category: THT comparators
Description: IC: comparator; universal; Cmp: 4; 2÷36V; THT; DIP14; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 2...36V
Mounting: THT
Case: DIP14
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Kind of output: open collector
Input offset current: 150nA
товару немає в наявності
В кошику
од. на суму грн.
| MMBT2907A |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
| NCP51561BBDWR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Output current: -9...4.5A
Number of channels: 2
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 19ns
Pulse fall time: 19ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Output current: -9...4.5A
Number of channels: 2
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 19ns
Pulse fall time: 19ns
товару немає в наявності
В кошику
од. на суму грн.
| NCP51561BADWR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Output current: -9...4.5A
Number of channels: 2
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 19ns
Pulse fall time: 19ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Output current: -9...4.5A
Number of channels: 2
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 19ns
Pulse fall time: 19ns
товару немає в наявності
В кошику
од. на суму грн.
| NZ8F5V1MX2WT5G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; X2DFNW2; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: X2DFNW2
Semiconductor structure: single diode
Manufacturer series: NZ8F
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; X2DFNW2; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: X2DFNW2
Semiconductor structure: single diode
Manufacturer series: NZ8F
товару немає в наявності
В кошику
од. на суму грн.
| MMBT2222A |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику
од. на суму грн.
| SS26 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| SS26 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W
Mounting: SMD
Max. forward voltage: 0.7V
Power dissipation: 1.3W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W
Mounting: SMD
Max. forward voltage: 0.7V
Power dissipation: 1.3W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| DF08M |
|
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| DF08M |
|
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| SZMM3Z8V2ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
на замовлення 2088 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.93 грн |
| 52+ | 7.93 грн |
| 70+ | 5.84 грн |
| 100+ | 5.16 грн |
| 500+ | 4.37 грн |
| SZMM3Z8V2T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| KSP55TA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50
Mounting: THT
Kind of package: Ammo Pack
Frequency: 105MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50
Mounting: THT
Kind of package: Ammo Pack
Frequency: 105MHz
на замовлення 1990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.61 грн |
| 21+ | 19.49 грн |
| 100+ | 12.53 грн |
| 500+ | 9.30 грн |
| 1000+ | 8.90 грн |
| ES3J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
на замовлення 2427 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.13 грн |
| 18+ | 22.64 грн |
| 50+ | 19.89 грн |
| 100+ | 18.28 грн |
| 250+ | 16.09 грн |
| 500+ | 14.64 грн |
| MM74HCT164M |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Manufacturer series: HCT
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Case: SO14
Supply voltage: 4.5...5.5V DC
Number of channels: 1
Family: HCT
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Manufacturer series: HCT
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Case: SO14
Supply voltage: 4.5...5.5V DC
Number of channels: 1
Family: HCT
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
товару немає в наявності
В кошику
од. на суму грн.
| MM74HCT164MX |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Manufacturer series: HCT
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: SO14
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Technology: CMOS; TTL
Number of channels: 1
Family: HCT
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Manufacturer series: HCT
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: SO14
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Technology: CMOS; TTL
Number of channels: 1
Family: HCT
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
товару немає в наявності
В кошику
од. на суму грн.
| MBRF20L60CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
товару немає в наявності
В кошику
од. на суму грн.