Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TL431AIDG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: tube Maximum output current: 0.1A |
на замовлення 332 шт: термін постачання 21-30 дні (днів) |
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MBRA340T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.39V Kind of package: reel; tape |
на замовлення 7754 шт: термін постачання 21-30 дні (днів) |
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MC33063ADG | ONSEMI |
![]() ![]() Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: tube |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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MC33063ADR2G | ONSEMI |
![]() ![]() Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: reel; tape |
на замовлення 778 шт: термін постачання 21-30 дні (днів) |
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MC33063AP1G | ONSEMI |
![]() ![]() Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: DIP8 Mounting: THT Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: tube |
на замовлення 106 шт: термін постачання 21-30 дні (днів) |
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MC33063AVDG | ONSEMI |
![]() Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Topology: boost; buck; buck-boost Kind of integrated circuit: DC/DC converter Case: SO8 Output current: 1.5A Output voltage: 1.25...40V DC Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Frequency: 0.1MHz Kind of package: tube Input voltage: 3...40V DC |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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MC33063AVPG | ONSEMI |
![]() Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: DIP8 Mounting: THT Frequency: 0.1MHz Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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FDLL4148 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD80 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: reel; tape |
на замовлення 38591 шт: термін постачання 21-30 дні (днів) |
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FDLL4148-D87Z | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD80 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC245ADTG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Manufacturer series: HC |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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MC74HC245ADTR2G | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 160µA Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC245ADWG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Manufacturer series: HC |
на замовлення 316 шт: термін постачання 21-30 дні (днів) |
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MC74HC245ADWR2G | ONSEMI |
![]() Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus transceiver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HC Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM74HC245AMTC | ONSEMI |
![]() Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB Type of integrated circuit: digital Kind of integrated circuit: 3-state; octal; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20WB Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HC Manufacturer series: HC |
на замовлення 212 шт: термін постачання 21-30 дні (днів) |
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MM74HC245AMTCX | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; HC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 160µA Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
MM74HC245ASJ | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SOP20; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Case: SOP20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM74HC245AWM | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; HC; 80uA Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Quiescent current: 80µA Manufacturer series: HC |
на замовлення 325 шт: термін постачання 21-30 дні (днів) |
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MM74HC245AWMX | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4448WS | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Case: SOD323F Kind of package: reel; tape |
на замовлення 2305 шт: термін постачання 21-30 дні (днів) |
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BD13910STU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO Case: TO126ISO Mounting: THT Kind of package: tube Power dissipation: 12.5W Polarisation: bipolar Collector-emitter voltage: 80V Current gain: 40...250 Collector current: 1.5A Type of transistor: NPN |
на замовлення 641 шт: термін постачання 21-30 дні (днів) |
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BD13916S | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO Case: TO126ISO Mounting: THT Kind of package: bulk Power dissipation: 1.25W Polarisation: bipolar Collector-emitter voltage: 80V Current gain: 100...250 Collector current: 1.5A Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD13916STU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO Case: TO126ISO Mounting: THT Kind of package: tube Power dissipation: 12.5W Polarisation: bipolar Collector-emitter voltage: 80V Current gain: 100...250 Collector current: 1.5A Type of transistor: NPN |
на замовлення 1445 шт: термін постачання 21-30 дні (днів) |
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BD139G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225 Case: TO225 Mounting: THT Kind of package: bulk Power dissipation: 12.5W Polarisation: bipolar Collector-emitter voltage: 80V Current gain: 40...250 Collector current: 1.5A Type of transistor: NPN |
на замовлення 498 шт: термін постачання 21-30 дні (днів) |
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2N7000-D26Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape |
на замовлення 2290 шт: термін постачання 21-30 дні (днів) |
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2N7000-D74Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7000-D75Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape |
на замовлення 639 шт: термін постачання 21-30 дні (днів) |
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2N7000BU | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7000TA | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack |
на замовлення 611 шт: термін постачання 21-30 дні (днів) |
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BS170 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Technology: DMOS |
на замовлення 5868 шт: термін постачання 21-30 дні (днів) |
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BS170-D75Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 909 шт: термін постачання 21-30 дні (днів) |
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BS170-D26Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 2383 шт: термін постачання 21-30 дні (днів) |
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BS170-D27Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 4353 шт: термін постачання 21-30 дні (днів) |
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BC807-40LT1G | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 10153 шт: термін постачання 21-30 дні (днів) |
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BC807-40LT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
CAT24C08C4ATR | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
CAT24C08C4CTR | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
CAT24C08C5ATR | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BD14010STU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO Collector current: 1.5A Type of transistor: PNP Power dissipation: 12.5W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO126ISO Collector-emitter voltage: 80V Current gain: 63...160 |
на замовлення 1854 шт: термін постачання 21-30 дні (днів) |
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BD140G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225 Collector current: 1.5A Type of transistor: PNP Power dissipation: 12.5W Polarisation: bipolar Kind of package: bulk Mounting: THT Case: TO225 Collector-emitter voltage: 80V Current gain: 40...250 |
на замовлення 428 шт: термін постачання 21-30 дні (днів) |
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MMBD1401 | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
на замовлення 2727 шт: термін постачання 21-30 дні (днів) |
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MMBD1403 | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: double series Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1404 | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: common cathode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
на замовлення 1864 шт: термін постачання 21-30 дні (днів) |
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MMBD1404A | ONSEMI |
![]() Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 175V Max. forward voltage: 1.25V Load current: 0.6A Semiconductor structure: common cathode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1405 | ONSEMI |
![]() ![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 0.2A Semiconductor structure: common anode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
на замовлення 723 шт: термін постачання 21-30 дні (днів) |
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MMBD1405A | ONSEMI |
![]() ![]() Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 Capacitance: 2pF Max. off-state voltage: 175V Max. forward voltage: 1.25V Load current: 0.6A Semiconductor structure: common anode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N3904BU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 300MHz |
на замовлення 7002 шт: термін постачання 21-30 дні (днів) |
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2N3904TFR | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
на замовлення 1296 шт: термін постачання 21-30 дні (днів) |
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BSS138L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A |
на замовлення 4383 шт: термін постачання 21-30 дні (днів) |
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BSS138LT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 16169 шт: термін постачання 21-30 дні (днів) |
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BSS138LT3G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A |
на замовлення 2852 шт: термін постачання 21-30 дні (днів) |
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BSS138W | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.21A Power dissipation: 0.34W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 5.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 59 шт: термін постачання 21-30 дні (днів) |
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MMBFJ113 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA Mounting: SMD Case: SOT23 Gate current: 50mA Drain current: 2mA On-state resistance: 100Ω Type of transistor: N-JFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate-source voltage: -35V |
на замовлення 4681 шт: термін постачання 21-30 дні (днів) |
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BYW80-200G | ONSEMI |
![]() ![]() Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. load current: 16A Heatsink thickness: 1.15...1.39mm |
на замовлення 1458 шт: термін постачання 21-30 дні (днів) |
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1N4448TR | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.5W |
на замовлення 9443 шт: термін постачання 21-30 дні (днів) |
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LM2904DR2G | ONSEMI |
![]() ![]() Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.3V/μs Operating temperature: -40...105°C Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 50nA Input offset current: 45...200nA Voltage supply range: ± 1.5...16V DC; 3...32V DC |
на замовлення 2572 шт: термін постачання 21-30 дні (днів) |
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FGH40N60SFDTU | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Power dissipation: 116W Case: TO247-3 Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Pulsed collector current: 120A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
на замовлення 355 шт: термін постачання 21-30 дні (днів) |
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FGH40N60SMD | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Power dissipation: 174W Case: TO247-3 Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Pulsed collector current: 120A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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FGH40N60UFDTU | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Power dissipation: 116W Case: TO247-3 Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Pulsed collector current: 120A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
на замовлення 174 шт: термін постачання 21-30 дні (днів) |
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FGAF40N60UFDTU | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Power dissipation: 40W Case: TO3PF Mounting: THT Gate charge: 150nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 20A Pulsed collector current: 160A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC78LC33NTRG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 53mV Output voltage: 3.3V Output current: 80mA Case: TSOT23-5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 4.3...12V |
на замовлення 3106 шт: термін постачання 21-30 дні (днів) |
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TL431AIDG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
на замовлення 332 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.56 грн |
20+ | 19.84 грн |
25+ | 16.36 грн |
64+ | 14.42 грн |
98+ | 13.10 грн |
MBRA340T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Kind of package: reel; tape
на замовлення 7754 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 29.22 грн |
19+ | 21.01 грн |
50+ | 16.59 грн |
100+ | 14.73 грн |
111+ | 8.22 грн |
304+ | 7.75 грн |
MC33063ADG | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.44 грн |
10+ | 38.83 грн |
25+ | 33.33 грн |
33+ | 27.75 грн |
MC33063ADR2G | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
на замовлення 778 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 96.83 грн |
10+ | 53.79 грн |
25+ | 44.96 грн |
29+ | 31.70 грн |
79+ | 30.00 грн |
MC33063AP1G | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 106 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 108.52 грн |
10+ | 64.65 грн |
23+ | 40.54 грн |
25+ | 40.46 грн |
62+ | 38.29 грн |
MC33063AVDG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Topology: boost; buck; buck-boost
Kind of integrated circuit: DC/DC converter
Case: SO8
Output current: 1.5A
Output voltage: 1.25...40V DC
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 0.1MHz
Kind of package: tube
Input voltage: 3...40V DC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Topology: boost; buck; buck-boost
Kind of integrated circuit: DC/DC converter
Case: SO8
Output current: 1.5A
Output voltage: 1.25...40V DC
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 0.1MHz
Kind of package: tube
Input voltage: 3...40V DC
на замовлення 33 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.95 грн |
9+ | 46.66 грн |
25+ | 36.90 грн |
29+ | 31.87 грн |
MC33063AVPG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; DIP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Frequency: 0.1MHz
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 146 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 122.71 грн |
10+ | 70.46 грн |
23+ | 40.54 грн |
25+ | 40.46 грн |
62+ | 38.29 грн |
FDLL4148 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
на замовлення 38591 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
55+ | 7.65 грн |
74+ | 5.27 грн |
81+ | 4.81 грн |
119+ | 3.27 грн |
139+ | 2.79 грн |
156+ | 2.49 грн |
250+ | 1.74 грн |
500+ | 1.34 грн |
1107+ | 0.82 грн |
FDLL4148-D87Z |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
MC74HC245ADTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Manufacturer series: HC
на замовлення 150 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 102.68 грн |
10+ | 56.51 грн |
25+ | 47.05 грн |
30+ | 31.01 грн |
81+ | 29.30 грн |
MC74HC245ADTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Manufacturer series: HC
товару немає в наявності
В кошику
од. на суму грн.
MC74HC245ADWG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Manufacturer series: HC
на замовлення 316 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.26 грн |
10+ | 42.79 грн |
31+ | 29.69 грн |
85+ | 27.98 грн |
MC74HC245ADWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Manufacturer series: HC
товару немає в наявності
В кошику
од. на суму грн.
MM74HC245AMTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Manufacturer series: HC
на замовлення 212 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 83.48 грн |
10+ | 47.36 грн |
25+ | 38.60 грн |
26+ | 35.11 грн |
72+ | 33.18 грн |
75+ | 31.94 грн |
MM74HC245AMTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Manufacturer series: HC
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MM74HC245ASJ |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SOP20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Case: SOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SOP20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Case: SOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HC
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MM74HC245AWM |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; HC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Quiescent current: 80µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; HC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Quiescent current: 80µA
Manufacturer series: HC
на замовлення 325 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 109.35 грн |
10+ | 62.55 грн |
21+ | 44.57 грн |
56+ | 42.17 грн |
114+ | 41.39 грн |
266+ | 40.54 грн |
MM74HC245AWMX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HC
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1N4448WS |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
на замовлення 2305 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.10 грн |
80+ | 4.88 грн |
117+ | 3.34 грн |
500+ | 2.53 грн |
568+ | 1.60 грн |
1561+ | 1.51 грн |
BD13910STU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Power dissipation: 12.5W
Polarisation: bipolar
Collector-emitter voltage: 80V
Current gain: 40...250
Collector current: 1.5A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Power dissipation: 12.5W
Polarisation: bipolar
Collector-emitter voltage: 80V
Current gain: 40...250
Collector current: 1.5A
Type of transistor: NPN
на замовлення 641 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 45.08 грн |
11+ | 37.13 грн |
38+ | 24.26 грн |
104+ | 22.94 грн |
300+ | 22.79 грн |
540+ | 22.09 грн |
BD13916S |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: bulk
Power dissipation: 1.25W
Polarisation: bipolar
Collector-emitter voltage: 80V
Current gain: 100...250
Collector current: 1.5A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: bulk
Power dissipation: 1.25W
Polarisation: bipolar
Collector-emitter voltage: 80V
Current gain: 100...250
Collector current: 1.5A
Type of transistor: NPN
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од. на суму грн.
BD13916STU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Power dissipation: 12.5W
Polarisation: bipolar
Collector-emitter voltage: 80V
Current gain: 100...250
Collector current: 1.5A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Power dissipation: 12.5W
Polarisation: bipolar
Collector-emitter voltage: 80V
Current gain: 100...250
Collector current: 1.5A
Type of transistor: NPN
на замовлення 1445 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.77 грн |
10+ | 44.18 грн |
25+ | 35.73 грн |
43+ | 21.32 грн |
118+ | 20.15 грн |
540+ | 19.46 грн |
1020+ | 19.38 грн |
BD139G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Case: TO225
Mounting: THT
Kind of package: bulk
Power dissipation: 12.5W
Polarisation: bipolar
Collector-emitter voltage: 80V
Current gain: 40...250
Collector current: 1.5A
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Case: TO225
Mounting: THT
Kind of package: bulk
Power dissipation: 12.5W
Polarisation: bipolar
Collector-emitter voltage: 80V
Current gain: 40...250
Collector current: 1.5A
Type of transistor: NPN
на замовлення 498 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 68.45 грн |
10+ | 50.54 грн |
33+ | 28.37 грн |
89+ | 26.82 грн |
2N7000-D26Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
на замовлення 2290 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 29.22 грн |
22+ | 18.06 грн |
100+ | 13.18 грн |
114+ | 7.98 грн |
312+ | 7.60 грн |
2000+ | 7.29 грн |
2N7000-D74Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
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В кошику
од. на суму грн.
2N7000-D75Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
на замовлення 639 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.90 грн |
18+ | 21.63 грн |
25+ | 16.90 грн |
100+ | 11.63 грн |
113+ | 8.06 грн |
310+ | 7.60 грн |
2N7000BU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
2N7000TA |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
на замовлення 611 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.38 грн |
20+ | 20.31 грн |
25+ | 16.51 грн |
50+ | 13.80 грн |
100+ | 11.47 грн |
117+ | 7.75 грн |
322+ | 7.36 грн |
BS170 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
на замовлення 5868 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.87 грн |
30+ | 13.33 грн |
39+ | 10.15 грн |
100+ | 7.75 грн |
141+ | 6.43 грн |
389+ | 6.05 грн |
500+ | 5.89 грн |
1000+ | 5.81 грн |
BS170-D75Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 909 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.71 грн |
19+ | 21.39 грн |
50+ | 15.04 грн |
100+ | 12.25 грн |
103+ | 8.84 грн |
282+ | 8.37 грн |
500+ | 8.14 грн |
BS170-D26Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 2383 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.72 грн |
21+ | 18.60 грн |
50+ | 12.48 грн |
100+ | 10.62 грн |
115+ | 7.91 грн |
317+ | 7.44 грн |
1000+ | 7.36 грн |
2000+ | 7.21 грн |
BS170-D27Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 4353 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.72 грн |
32+ | 12.40 грн |
50+ | 9.77 грн |
100+ | 8.76 грн |
138+ | 6.59 грн |
377+ | 6.28 грн |
1000+ | 6.12 грн |
BC807-40LT1G | ![]() |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 10153 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.51 грн |
84+ | 4.65 грн |
103+ | 3.80 грн |
136+ | 2.85 грн |
167+ | 2.33 грн |
202+ | 1.92 грн |
835+ | 1.09 грн |
2297+ | 1.02 грн |
BC807-40LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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CAT24C08C4ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08C4CTR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08C5ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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BD14010STU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
Collector-emitter voltage: 80V
Current gain: 63...160
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO126ISO
Collector-emitter voltage: 80V
Current gain: 63...160
на замовлення 1854 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 79.30 грн |
10+ | 48.91 грн |
25+ | 44.80 грн |
29+ | 32.09 грн |
78+ | 30.31 грн |
BD140G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO225
Collector-emitter voltage: 80V
Current gain: 40...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 12.5W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO225
Collector-emitter voltage: 80V
Current gain: 40...250
на замовлення 428 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.12 грн |
10+ | 48.52 грн |
27+ | 33.87 грн |
74+ | 32.01 грн |
250+ | 31.08 грн |
MMBD1401 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
на замовлення 2727 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.70 грн |
39+ | 10.15 грн |
59+ | 6.64 грн |
100+ | 5.60 грн |
225+ | 4.05 грн |
617+ | 3.83 грн |
1000+ | 3.68 грн |
MMBD1403 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
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MMBD1404 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
на замовлення 1864 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.70 грн |
35+ | 11.24 грн |
53+ | 7.32 грн |
100+ | 6.23 грн |
230+ | 3.95 грн |
633+ | 3.73 грн |
1000+ | 3.59 грн |
MMBD1404A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 175V
Max. forward voltage: 1.25V
Load current: 0.6A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 175V
Max. forward voltage: 1.25V
Load current: 0.6A
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
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MMBD1405 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
на замовлення 723 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.53 грн |
37+ | 10.70 грн |
50+ | 8.29 грн |
100+ | 7.52 грн |
192+ | 4.73 грн |
527+ | 4.50 грн |
MMBD1405A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 175V
Max. forward voltage: 1.25V
Load current: 0.6A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Capacitance: 2pF
Max. off-state voltage: 175V
Max. forward voltage: 1.25V
Load current: 0.6A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Leakage current: 0.1µA
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од. на суму грн.
2N3904BU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 7002 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.86 грн |
49+ | 8.06 грн |
100+ | 4.36 грн |
291+ | 3.12 грн |
799+ | 2.95 грн |
3000+ | 2.84 грн |
2N3904TFR |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 1296 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.36 грн |
44+ | 8.99 грн |
52+ | 7.52 грн |
78+ | 4.99 грн |
100+ | 4.28 грн |
258+ | 3.52 грн |
709+ | 3.33 грн |
BSS138L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
на замовлення 4383 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.69 грн |
43+ | 9.07 грн |
67+ | 5.86 грн |
250+ | 3.53 грн |
426+ | 2.13 грн |
1170+ | 2.02 грн |
BSS138LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 16169 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.69 грн |
50+ | 7.91 грн |
100+ | 6.36 грн |
250+ | 5.36 грн |
338+ | 2.68 грн |
928+ | 2.54 грн |
BSS138LT3G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
на замовлення 2852 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.53 грн |
37+ | 10.70 грн |
46+ | 8.45 грн |
100+ | 4.22 грн |
284+ | 3.20 грн |
780+ | 3.02 грн |
2500+ | 2.91 грн |
BSS138W |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 59 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.54 грн |
37+ | 10.70 грн |
50+ | 8.39 грн |
MMBFJ113 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Mounting: SMD
Case: SOT23
Gate current: 50mA
Drain current: 2mA
On-state resistance: 100Ω
Type of transistor: N-JFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -35V
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Mounting: SMD
Case: SOT23
Gate current: 50mA
Drain current: 2mA
On-state resistance: 100Ω
Type of transistor: N-JFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -35V
на замовлення 4681 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.54 грн |
28+ | 14.34 грн |
33+ | 11.94 грн |
50+ | 10.39 грн |
100+ | 9.07 грн |
138+ | 6.59 грн |
380+ | 6.28 грн |
1000+ | 6.05 грн |
BYW80-200G | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
на замовлення 1458 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 94.33 грн |
10+ | 52.32 грн |
20+ | 46.90 грн |
50+ | 45.19 грн |
54+ | 44.34 грн |
100+ | 42.63 грн |
1N4448TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
на замовлення 9443 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.14 грн |
139+ | 2.79 грн |
188+ | 2.06 грн |
250+ | 1.78 грн |
500+ | 1.57 грн |
1000+ | 1.36 грн |
1027+ | 0.88 грн |
2827+ | 0.84 грн |
LM2904DR2G | ![]() |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.3V/μs
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.3V/μs
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Voltage supply range: ± 1.5...16V DC; 3...32V DC
на замовлення 2572 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.23 грн |
23+ | 17.21 грн |
25+ | 16.05 грн |
75+ | 12.40 грн |
100+ | 11.78 грн |
111+ | 8.22 грн |
304+ | 7.75 грн |
2500+ | 7.44 грн |
FGH40N60SFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
на замовлення 355 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 343.09 грн |
3+ | 273.63 грн |
5+ | 191.46 грн |
14+ | 180.61 грн |
150+ | 178.28 грн |
FGH40N60SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
на замовлення 82 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 288.00 грн |
3+ | 236.42 грн |
5+ | 204.64 грн |
13+ | 193.79 грн |
FGH40N60UFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
на замовлення 174 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 414.05 грн |
4+ | 231.77 грн |
11+ | 218.59 грн |
120+ | 217.82 грн |
FGAF40N60UFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
MC78LC33NTRG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
на замовлення 3106 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 30.39 грн |
42+ | 21.94 грн |
114+ | 20.77 грн |
500+ | 20.00 грн |