| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDD306P | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK Case: DPAK Mounting: SMD Kind of channel: enhancement Technology: PowerTrench® Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -12V Drain current: -6.7A Gate charge: 21nC On-state resistance: 90mΩ Power dissipation: 52W Gate-source voltage: ±8V |
на замовлення 352 шт: термін постачання 21-30 дні (днів) |
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| FAN54120MP420X | ONSEMI |
Category: Battery and battery cells controllers Description: IC: PMIC; battery charging controller; Iout: 500mA; DFN6; 4÷6VDC Operating temperature: -30...85°C Output current: 0.5A Supply voltage: 4...6V DC Rechargeable battery voltage: 4.2V Mounting: SMD Kind of integrated circuit: battery charging controller Case: DFN6 Type of integrated circuit: PMIC Kind of package: reel; tape Number of rechargeable batteries: 1 x Li-Ion / Li-Po Interface: USB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RFD3055LESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 38W Case: DPAK Gate-source voltage: ±16V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2477 шт: термін постачання 21-30 дні (днів) |
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RFD12N06RLESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±16V On-state resistance: 75mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Technology: UltraFET® |
на замовлення 1438 шт: термін постачання 21-30 дні (днів) |
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| FDMC8360LET40 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 658A Power dissipation: 75W Case: Power33 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMC86570LET60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Pulsed drain current: 436A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMD8240LET40 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 73A Pulsed drain current: 489A Power dissipation: 50W Case: PQFN12 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMD8260LET60 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 304A Power dissipation: 44W Case: PQFN12 Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FSV340AF | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape Mounting: SMD Load current: 3A Max. forward voltage: 0.5V Max. forward impulse current: 80A Max. off-state voltage: 40V Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMA flat |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BD243C | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TIP112G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BAT54S | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.29W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NDS9952A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3.7/-2.9A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 130/210mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMUN5235DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ Type of transistor: NPN x2 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Kind of transistor: BRT |
на замовлення 5980 шт: термін постачання 21-30 дні (днів) |
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SMUN5231DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ Type of transistor: NPN x2 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Kind of transistor: BRT |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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SMUN5335DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Kind of transistor: BRT; complementary pair |
на замовлення 4090 шт: термін постачання 21-30 дні (днів) |
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| FDBL0065N40 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Power dissipation: 429W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 0.65mΩ Mounting: SMD Gate charge: 0.22µC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC74LVXT4053DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Case: SOIC16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT Number of inputs: 6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MC74LVXT4053DTG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT Number of inputs: 6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC74LVXT4053DTRG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT Number of inputs: 6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC74LVXT4066DTRG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; CMOS Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Case: TSSOP14 Supply voltage: 2...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 160µA Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LM324M | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14; tube Type of integrated circuit: operational amplifier Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO14 Operating temperature: 0...70°C Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ5242BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 243 шт: термін постачання 21-30 дні (днів) |
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| SZMMSZ5242BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| FDD306P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Gate charge: 21nC
On-state resistance: 90mΩ
Power dissipation: 52W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Gate charge: 21nC
On-state resistance: 90mΩ
Power dissipation: 52W
Gate-source voltage: ±8V
на замовлення 352 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.06 грн |
| 10+ | 51.67 грн |
| 50+ | 41.57 грн |
| 100+ | 37.68 грн |
| 250+ | 37.28 грн |
| FAN54120MP420X |
|
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Iout: 500mA; DFN6; 4÷6VDC
Operating temperature: -30...85°C
Output current: 0.5A
Supply voltage: 4...6V DC
Rechargeable battery voltage: 4.2V
Mounting: SMD
Kind of integrated circuit: battery charging controller
Case: DFN6
Type of integrated circuit: PMIC
Kind of package: reel; tape
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Interface: USB
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Iout: 500mA; DFN6; 4÷6VDC
Operating temperature: -30...85°C
Output current: 0.5A
Supply voltage: 4...6V DC
Rechargeable battery voltage: 4.2V
Mounting: SMD
Kind of integrated circuit: battery charging controller
Case: DFN6
Type of integrated circuit: PMIC
Kind of package: reel; tape
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Interface: USB
товару немає в наявності
В кошику
од. на суму грн.
| RFD3055LESM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2477 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.96 грн |
| 16+ | 25.31 грн |
| 25+ | 25.23 грн |
| RFD12N06RLESM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UltraFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UltraFET®
на замовлення 1438 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.90 грн |
| 10+ | 55.07 грн |
| 50+ | 43.02 грн |
| 100+ | 40.43 грн |
| FDMC8360LET40 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 658A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 658A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FDMC86570LET60 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FDMD8240LET40 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 489A
Power dissipation: 50W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 489A
Power dissipation: 50W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FDMD8260LET60 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 304A
Power dissipation: 44W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 304A
Power dissipation: 44W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FSV340AF |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA flat
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA flat
товару немає в наявності
В кошику
од. на суму грн.
| BD243C |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
товару немає в наявності
В кошику
од. на суму грн.
| TIP112G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
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| BAT54S |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
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| NDS9952A |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.7/-2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 130/210mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.7/-2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 130/210mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| SMUN5235DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 5980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.80 грн |
| 43+ | 9.46 грн |
| 60+ | 6.78 грн |
| 100+ | 5.85 грн |
| 500+ | 4.29 грн |
| 1000+ | 3.80 грн |
| 3000+ | 3.20 грн |
| SMUN5231DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.84 грн |
| 500+ | 5.40 грн |
| 3000+ | 3.18 грн |
| SMUN5335DW1T1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
на замовлення 4090 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 12.71 грн |
| 40+ | 10.51 грн |
| 100+ | 9.30 грн |
| 500+ | 8.41 грн |
| 3000+ | 8.09 грн |
| FDBL0065N40 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.65mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.65mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
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| MC74LVXT4053DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
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| MC74LVXT4053DTG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
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| MC74LVXT4053DTRG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
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| MC74LVXT4066DTRG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; CMOS
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Case: TSSOP14
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 160µA
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; CMOS
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Case: TSSOP14
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 160µA
Technology: CMOS
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| LM324M |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14; tube
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: 0...70°C
Kind of package: tube
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14; tube
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: 0...70°C
Kind of package: tube
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| MMSZ5242BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 243 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.58 грн |
| 67+ | 6.07 грн |
| 118+ | 3.44 грн |
| 151+ | 2.68 грн |
| 200+ | 2.13 грн |
| SZMMSZ5242BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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