| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MC74HCT138ADR2G | ONSEMI |
 Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Family: HCT Kind of integrated circuit: decoder; demultiplexer Manufacturer series: HCT Technology: CMOS; TTL Number of inputs: 6 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HCT138ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Family: HCT Kind of integrated circuit: decoder; demultiplexer Manufacturer series: HCT Technology: CMOS; TTL Number of inputs: 6 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MM74HCT138M | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; TTL; SMD; SO16 Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: tube Family: HCT Kind of integrated circuit: 3 to 8 line; line decoder Manufacturer series: HCT Technology: TTL Number of inputs: 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS6375 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Type of transistor: P-MOSFET Drain-source voltage: -20V Drain current: -8A Gate charge: 36nC On-state resistance: 39mΩ Power dissipation: 2.5W Gate-source voltage: ±8V Polarisation: unipolar |
на замовлення 758 шт: термін постачання 14-30 дні (днів) |
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| NSR20F40NXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; 0603; SMD; 40V; 2A; reel,tape Mounting: SMD Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Case - inch: 0603 Case - mm: 1608 Max. forward impulse current: 28A Max. forward voltage: 0.55V Max. off-state voltage: 40V |
на замовлення 4900 шт: термін постачання 14-30 дні (днів) |
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FDC634P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6 Mounting: SMD On-state resistance: 0.13Ω Power dissipation: 1.6W Gate-source voltage: ±8V Kind of channel: enhancement Type of transistor: P-MOSFET Technology: PowerTrench® Kind of package: reel; tape Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Gate charge: 10nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
| NSV20200LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 2A; 0.71W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Frequency: 100MHz Polarisation: bipolar Type of transistor: PNP Kind of package: reel; tape Power dissipation: 0.71W Collector current: 2A Collector-emitter voltage: 20V Current gain: 250 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSV20200DMTWTBG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 20V; 2A; 2.1W; WDFN6 Mounting: SMD Case: WDFN6 Frequency: 155MHz Polarisation: bipolar Type of transistor: PNP x2 Kind of package: reel; tape Power dissipation: 2.1W Collector current: 2A Collector-emitter voltage: 20V Current gain: 100 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C27LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 27V; SMD; SOT23; single diode; reel,tape; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C |
на замовлення 2455 шт: термін постачання 14-30 дні (днів) |
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MUN5211DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 60 |
на замовлення 23555 шт: термін постачання 14-30 дні (днів) |
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SMUN5211DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC847BS | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.21W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.21W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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S3M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 3A; 2.5us; SMC; Ufmax: 1.2V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Reverse recovery time: 2.5µs Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.2V Max. forward impulse current: 100A Kind of package: reel; tape Capacitance: 60pF Power dissipation: 2.6W |
на замовлення 2027 шт: термін постачання 14-30 дні (днів) |
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| NRVS3MB | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.15V Max. forward impulse current: 80A Kind of package: reel; tape Reverse recovery time: 1.5µs Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FXLA104UMX | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; UMLP16; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Number of channels: 4 Supply voltage: 1.1...3.6V DC Mounting: SMD Case: UMLP16 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 4 Number of outputs: 4 Integrated circuit features: auto-direction sensing Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDS4935A | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1090 шт: термін постачання 14-30 дні (днів) |
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| BZX79C9V1-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 9.1V; Ammo Pack; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2V7002KT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
на замовлення 5467 шт: термін постачання 14-30 дні (днів) |
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NTJD5121NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD Mounting: SMD Case: SC70-6; SC88; SOT363 On-state resistance: 2.5Ω Kind of package: reel; tape Power dissipation: 0.25W Gate charge: 0.9nC Polarisation: unipolar Version: ESD Drain current: 0.295A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V |
на замовлення 13685 шт: термін постачання 14-30 дні (днів) |
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MC74ACT244DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Case: TSSOP20 Operating temperature: -40...85°C Technology: CMOS Number of channels: 8 Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: ACT Kind of output: 3-state |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74ACT244DWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Case: SOIC20 Operating temperature: -40...85°C Kind of package: reel; tape Technology: TTL Family: ACT Number of channels: 8 Mounting: SMD Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of output: 3-state |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PZTA28 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.8A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Kind of transistor: Darlington |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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PZTA29 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Kind of transistor: Darlington |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SZMMSZ5245BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14016BDR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; SPST-NO; Ch: 4; 30uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Output configuration: SPST-NO Number of channels: 4 Case: SOIC14 Supply voltage: 3...18V Mounting: SMD Operating temperature: -55...125°C Quiescent current: 30µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSR20F30NXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape Case: DSN0603-2 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.48V Load current: 2A Max. load current: 4A Max. off-state voltage: 30V Max. forward impulse current: 28A |
на замовлення 835 шт: термін постачання 14-30 дні (днів) |
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| NSR20F20NXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DSN0603-2; SMD; 20V; 2A; reel,tape Case: DSN0603-2 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Load current: 2A Max. forward voltage: 0.45V Max. off-state voltage: 20V Max. load current: 4A Max. forward impulse current: 28A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSR2030QMUTWG | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 30V; If: 2A; Ifsm: 12.5A Electrical mounting: SMT Type of bridge rectifier: single-phase Case: uDFN4 Kind of package: reel; tape Features of semiconductor devices: Schottky Load current: 2A Max. forward voltage: 0.65V Max. off-state voltage: 30V Max. forward impulse current: 12.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NJW0281G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 15A; 150W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 150W Case: TO3P Current gain: 75...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
на замовлення 231 шт: термін постачання 14-30 дні (днів) |
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| MM3Z8V2B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 8.2V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 8.2V Mounting: SMD Tolerance: ±2% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3ZxxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFWS016N06CT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 18W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 15.6mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 226A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH75T65UPD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH75T65UPD-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH75T65UPD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65MQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65LQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 793nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65MQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 145nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FQPF7P20 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.3A Pulsed drain current: -20.8A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQPF5N90 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQPF2N80 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQPF5N40 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.9A; Idm: 12A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQPF13N06L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.1A Pulsed drain current: 40A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 6.4nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQPF16N25C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.8A Pulsed drain current: 62.4A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 53.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQPF19N20 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 48A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 7.5A Pulsed drain current: 48A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQPF45N15V2 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 31A Pulsed drain current: 180A Power dissipation: 66W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQPF6N80CT | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 22A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQPF22N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 56W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
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FQPF27N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.9A Pulsed drain current: 56A Power dissipation: 55W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
FQPF2N80YDTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
FQPF32N20C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; Idm: 112A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 17.8A Pulsed drain current: 112A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
MMBZ5233BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 6V; SMD; SOT23; reel,tape; single diode Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6V Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMBZ52xxBLT1G |
на замовлення 5794 шт: термін постачання 14-30 дні (днів) |
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KSC5026MOS | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 1.5A; 20W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 800V Collector current: 1.5A Power dissipation: 20W Case: TO126ISO Current gain: 20...40 Mounting: THT Kind of package: bulk Frequency: 15MHz Pulsed collector current: 5A |
на замовлення 1893 шт: термін постачання 14-30 дні (днів) |
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 |
FQD16N25CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK Type of transistor: N-MOSFET Technology: QFET® Power dissipation: 160W Case: DPAK Mounting: SMD Gate charge: 53.5nC Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 250V On-state resistance: 0.27Ω Kind of channel: enhancement Drain current: 10.1A Gate-source voltage: ±30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
FQP16N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB Type of transistor: N-MOSFET Power dissipation: 142W Case: TO220AB Mounting: THT Gate charge: 35nC Kind of package: tube Pulsed drain current: 64A Polarisation: unipolar Drain-source voltage: 250V On-state resistance: 0.23Ω Kind of channel: enhancement Drain current: 10A Gate-source voltage: ±30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| LM2903VDR2G | ONSEMI |
 Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Mounting: SMT Case: SO8 Operating temperature: -40...125°C Operating voltage: 2...36V Input offset voltage: 7mV Input bias current: 20nA Kind of package: reel; tape Input offset current: 5nA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
 |
QRD1114 | ONSEMI |
Category: PCB Photoelectric Sensors Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB Type of sensor: photoelectric Operation mode: diffuse-reflective Output configuration: NPN Supply voltage: 5V DC Mounting: PCB Body dimensions: 4.39x6.1x4.65mm Operating temperature: -40...85°C |
на замовлення 59 шт: термін постачання 14-30 дні (днів) |
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| NCV2931CDR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 2.7...29.5V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV7327MW0R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape Case: DFNW8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Interface: LIN Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 5...18V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCV7357MW0R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1 Case: DFNW8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Interface: CAN FD Type of integrated circuit: CAN transceiver Number of channels: 1 Supply voltage: 4.75...5.25V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV7357MW3R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1 Case: DFNW8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Interface: CAN FD Type of integrated circuit: CAN transceiver Number of channels: 1 Supply voltage: 4.75...5.25V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| MC74HCT138ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: HCT
Kind of integrated circuit: decoder; demultiplexer
Manufacturer series: HCT
Technology: CMOS; TTL
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: HCT
Kind of integrated circuit: decoder; demultiplexer
Manufacturer series: HCT
Technology: CMOS; TTL
Number of inputs: 6
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74HCT138ADTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: HCT
Kind of integrated circuit: decoder; demultiplexer
Manufacturer series: HCT
Technology: CMOS; TTL
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: HCT
Kind of integrated circuit: decoder; demultiplexer
Manufacturer series: HCT
Technology: CMOS; TTL
Number of inputs: 6
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MM74HCT138M |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; TTL; SMD; SO16
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Family: HCT
Kind of integrated circuit: 3 to 8 line; line decoder
Manufacturer series: HCT
Technology: TTL
Number of inputs: 3
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; TTL; SMD; SO16
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Family: HCT
Kind of integrated circuit: 3 to 8 line; line decoder
Manufacturer series: HCT
Technology: TTL
Number of inputs: 3
товару немає в наявності
В кошику
од. на суму грн.
| FDS6375 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -8A
Gate charge: 36nC
On-state resistance: 39mΩ
Power dissipation: 2.5W
Gate-source voltage: ±8V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -8A
Gate charge: 36nC
On-state resistance: 39mΩ
Power dissipation: 2.5W
Gate-source voltage: ±8V
Polarisation: unipolar
на замовлення 758 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 72.49 грн |
| 8+ | 56.67 грн |
| 10+ | 49.69 грн |
| 50+ | 35.32 грн |
| NSR20F40NXT5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0603; SMD; 40V; 2A; reel,tape
Mounting: SMD
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Case - inch: 0603
Case - mm: 1608
Max. forward impulse current: 28A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0603; SMD; 40V; 2A; reel,tape
Mounting: SMD
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Case - inch: 0603
Case - mm: 1608
Max. forward impulse current: 28A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
на замовлення 4900 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.95 грн |
| 14+ | 30.58 грн |
| 17+ | 25.76 грн |
| 25+ | 20.28 грн |
| 100+ | 17.37 грн |
| FDC634P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Mounting: SMD
On-state resistance: 0.13Ω
Power dissipation: 1.6W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 10nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Mounting: SMD
On-state resistance: 0.13Ω
Power dissipation: 1.6W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 10nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NSV20200LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 0.71W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Power dissipation: 0.71W
Collector current: 2A
Collector-emitter voltage: 20V
Current gain: 250
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 0.71W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Power dissipation: 0.71W
Collector current: 2A
Collector-emitter voltage: 20V
Current gain: 250
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NSV20200DMTWTBG |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 2A; 2.1W; WDFN6
Mounting: SMD
Case: WDFN6
Frequency: 155MHz
Polarisation: bipolar
Type of transistor: PNP x2
Kind of package: reel; tape
Power dissipation: 2.1W
Collector current: 2A
Collector-emitter voltage: 20V
Current gain: 100
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 2A; 2.1W; WDFN6
Mounting: SMD
Case: WDFN6
Frequency: 155MHz
Polarisation: bipolar
Type of transistor: PNP x2
Kind of package: reel; tape
Power dissipation: 2.1W
Collector current: 2A
Collector-emitter voltage: 20V
Current gain: 100
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C27LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
на замовлення 2455 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.26 грн |
| 125+ | 3.32 грн |
| 248+ | 1.68 грн |
| 500+ | 1.32 грн |
| MUN5211DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 60
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 60
на замовлення 23555 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.84 грн |
| 57+ | 7.31 грн |
| 65+ | 6.40 грн |
| 112+ | 3.74 грн |
| 500+ | 2.73 грн |
| 1000+ | 2.41 грн |
| 1500+ | 2.26 грн |
| 3000+ | 2.05 грн |
| 6000+ | 1.89 грн |
| SMUN5211DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
| BC847BS |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.21W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.21W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.21W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.21W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| S3M |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 2.5us; SMC; Ufmax: 1.2V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 2.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.2V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 60pF
Power dissipation: 2.6W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 2.5us; SMC; Ufmax: 1.2V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 2.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.2V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 60pF
Power dissipation: 2.6W
на замовлення 2027 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.11 грн |
| 19+ | 21.94 грн |
| 50+ | 16.95 грн |
| 100+ | 15.21 грн |
| 250+ | 13.13 грн |
| 500+ | 11.80 грн |
| 1000+ | 11.47 грн |
| NRVS3MB |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| FXLA104UMX |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; UMLP16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Supply voltage: 1.1...3.6V DC
Mounting: SMD
Case: UMLP16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 4
Integrated circuit features: auto-direction sensing
Frequency: 140MHz
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; UMLP16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Supply voltage: 1.1...3.6V DC
Mounting: SMD
Case: UMLP16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 4
Integrated circuit features: auto-direction sensing
Frequency: 140MHz
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| FDS4935A |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1090 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 107.39 грн |
| 6+ | 78.61 грн |
| 10+ | 67.97 грн |
| 50+ | 47.61 грн |
| 100+ | 41.30 грн |
| 125+ | 39.64 грн |
| 500+ | 37.81 грн |
| BZX79C9V1-T50A |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; Ammo Pack; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; Ammo Pack; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
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| 2V7002KT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
на замовлення 5467 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.63 грн |
| 56+ | 7.48 грн |
| 78+ | 5.35 грн |
| 100+ | 4.57 грн |
| 500+ | 3.08 грн |
| 1000+ | 2.80 грн |
| 1500+ | 2.61 грн |
| 3000+ | 2.30 грн |
| NTJD5121NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD
Mounting: SMD
Case: SC70-6; SC88; SOT363
On-state resistance: 2.5Ω
Kind of package: reel; tape
Power dissipation: 0.25W
Gate charge: 0.9nC
Polarisation: unipolar
Version: ESD
Drain current: 0.295A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD
Mounting: SMD
Case: SC70-6; SC88; SOT363
On-state resistance: 2.5Ω
Kind of package: reel; tape
Power dissipation: 0.25W
Gate charge: 0.9nC
Polarisation: unipolar
Version: ESD
Drain current: 0.295A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
на замовлення 13685 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.11 грн |
| 38+ | 10.97 грн |
| 47+ | 8.91 грн |
| 55+ | 7.58 грн |
| 100+ | 6.46 грн |
| 250+ | 5.31 грн |
| 500+ | 4.63 грн |
| 1000+ | 4.07 грн |
| 3000+ | 3.42 грн |
| MC74ACT244DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Case: TSSOP20
Operating temperature: -40...85°C
Technology: CMOS
Number of channels: 8
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: ACT
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Case: TSSOP20
Operating temperature: -40...85°C
Technology: CMOS
Number of channels: 8
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: ACT
Kind of output: 3-state
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| MC74ACT244DWR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Case: SOIC20
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: TTL
Family: ACT
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Case: SOIC20
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: TTL
Family: ACT
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of output: 3-state
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| PZTA28 |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
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Мінімальне замовлення: 4000 шт
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| PZTA29 |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
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Мінімальне замовлення: 4000 шт
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| SZMMSZ5245BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| MC14016BDR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; SPST-NO; Ch: 4; 30uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Output configuration: SPST-NO
Number of channels: 4
Case: SOIC14
Supply voltage: 3...18V
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 30µA
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; SPST-NO; Ch: 4; 30uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Output configuration: SPST-NO
Number of channels: 4
Case: SOIC14
Supply voltage: 3...18V
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 30µA
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| NSR20F30NXT5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Case: DSN0603-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.48V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 30V
Max. forward impulse current: 28A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Case: DSN0603-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.48V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 30V
Max. forward impulse current: 28A
на замовлення 835 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.16 грн |
| 18+ | 24.10 грн |
| 50+ | 17.95 грн |
| NSR20F20NXT5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 20V; 2A; reel,tape
Case: DSN0603-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.45V
Max. off-state voltage: 20V
Max. load current: 4A
Max. forward impulse current: 28A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 20V; 2A; reel,tape
Case: DSN0603-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.45V
Max. off-state voltage: 20V
Max. load current: 4A
Max. forward impulse current: 28A
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| NSR2030QMUTWG |
|
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 2A; Ifsm: 12.5A
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: uDFN4
Kind of package: reel; tape
Features of semiconductor devices: Schottky
Load current: 2A
Max. forward voltage: 0.65V
Max. off-state voltage: 30V
Max. forward impulse current: 12.5A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 2A; Ifsm: 12.5A
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: uDFN4
Kind of package: reel; tape
Features of semiconductor devices: Schottky
Load current: 2A
Max. forward voltage: 0.65V
Max. off-state voltage: 30V
Max. forward impulse current: 12.5A
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| NJW0281G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 231 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.54 грн |
| 10+ | 164.53 грн |
| 20+ | 142.93 грн |
| 30+ | 135.45 грн |
| MM3Z8V2B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 8.2V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
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| NVMFWS016N06CT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
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| FGH75T65UPD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
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| FGH75T65UPD-F085 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
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| FGH75T65UPD-F155 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
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| FGHL75T65MQDT |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 450 шт
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| FGHL75T65LQDT |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
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Мінімальне замовлення: 450 шт
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| FGHL75T65MQD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
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| FQPF7P20 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF5N90 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF2N80 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF5N40 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.9A; Idm: 12A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.9A; Idm: 12A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF13N06L |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.1A
Pulsed drain current: 40A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.1A
Pulsed drain current: 40A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF16N25C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF19N20 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 48A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7.5A
Pulsed drain current: 48A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 48A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7.5A
Pulsed drain current: 48A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF45N15V2 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF6N80CT |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF22N30 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 56W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 56W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF27N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.9A
Pulsed drain current: 56A
Power dissipation: 55W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.9A
Pulsed drain current: 56A
Power dissipation: 55W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF2N80YDTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF32N20C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; Idm: 112A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17.8A
Pulsed drain current: 112A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; Idm: 112A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17.8A
Pulsed drain current: 112A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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| MMBZ5233BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6V
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6V
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
на замовлення 5794 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 90+ | 4.65 грн |
| 105+ | 3.99 грн |
| 200+ | 2.08 грн |
| 500+ | 1.43 грн |
| 1000+ | 1.25 грн |
| 3000+ | 1.15 грн |
| KSC5026MOS |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 1.5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 1.5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 20...40
Mounting: THT
Kind of package: bulk
Frequency: 15MHz
Pulsed collector current: 5A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 1.5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 1.5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 20...40
Mounting: THT
Kind of package: bulk
Frequency: 15MHz
Pulsed collector current: 5A
на замовлення 1893 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.17 грн |
| 10+ | 53.68 грн |
| 100+ | 36.06 грн |
| 250+ | 33.07 грн |
| FQD16N25CTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Power dissipation: 160W
Case: DPAK
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 250V
On-state resistance: 0.27Ω
Kind of channel: enhancement
Drain current: 10.1A
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Power dissipation: 160W
Case: DPAK
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 250V
On-state resistance: 0.27Ω
Kind of channel: enhancement
Drain current: 10.1A
Gate-source voltage: ±30V
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| FQP16N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 142W
Case: TO220AB
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Pulsed drain current: 64A
Polarisation: unipolar
Drain-source voltage: 250V
On-state resistance: 0.23Ω
Kind of channel: enhancement
Drain current: 10A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 142W
Case: TO220AB
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Pulsed drain current: 64A
Polarisation: unipolar
Drain-source voltage: 250V
On-state resistance: 0.23Ω
Kind of channel: enhancement
Drain current: 10A
Gate-source voltage: ±30V
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| LM2903VDR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2...36V
Input offset voltage: 7mV
Input bias current: 20nA
Kind of package: reel; tape
Input offset current: 5nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2...36V
Input offset voltage: 7mV
Input bias current: 20nA
Kind of package: reel; tape
Input offset current: 5nA
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| QRD1114 |
|
Виробник: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 95.56 грн |
| 10+ | 93.90 грн |
| NCV2931CDR2G |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 2.7...29.5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 2.7...29.5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV7327MW0R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: LIN
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5...18V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: LIN
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5...18V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NCV7357MW0R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: CAN FD
Type of integrated circuit: CAN transceiver
Number of channels: 1
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: CAN FD
Type of integrated circuit: CAN transceiver
Number of channels: 1
Supply voltage: 4.75...5.25V DC
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| NCV7357MW3R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: CAN FD
Type of integrated circuit: CAN transceiver
Number of channels: 1
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8; Ch: 1
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Interface: CAN FD
Type of integrated circuit: CAN transceiver
Number of channels: 1
Supply voltage: 4.75...5.25V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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