| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BD243CG | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Current gain: 20 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 1738 шт: термін постачання 21-30 дні (днів) |
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NC7SP14P5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: SC70-5 Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 0.9µA Kind of input: with Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NC7WP14P6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: dual; 2 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-6 Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 0.9µA Kind of input: with Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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HCPL2630M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: DIP8 Turn-on time: 30ns Turn-off time: 30ns Slew rate: 10kV/μs Max. off-state voltage: 5V Output voltage: -500mV...7V Manufacturer series: HCPL2630M |
на замовлення 856 шт: термін постачання 21-30 дні (днів) |
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| HCPL2630S | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 10ns Slew rate: 10kV/μs Max. off-state voltage: 5V Output voltage: -500mV...7V Manufacturer series: HCPL2630M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N4744ATR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 15V; reel,tape; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA |
на замовлення 963 шт: термін постачання 21-30 дні (днів) |
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LM2576T-ADJG | ONSEMI |
 Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.3÷37VDC; 3A; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.3...37V DC Output current: 3A Case: TO220-5 Mounting: THT Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: 0...125°C Kind of package: tube |
на замовлення 286 шт: термін постачання 21-30 дні (днів) |
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BCP56-10T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape |
на замовлення 3619 шт: термін постачання 21-30 дні (днів) |
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NDS332P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3 Drain-source voltage: -20V Drain current: -1A On-state resistance: 0.74Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: logic level Gate charge: 5nC Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SuperSOT-3 |
на замовлення 405 шт: термін постачання 21-30 дні (днів) |
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MMBFJ310LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 24mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
на замовлення 230 шт: термін постачання 21-30 дні (днів) |
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MBR20200CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220-3; Ufmax: 0.9V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.9V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.15...1.39mm |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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MC14015BDG | ONSEMI |
Category: Shift registers Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; 3÷18VDC Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: 2 Kind of package: tube Technology: CMOS Kind of integrated circuit: 4bit; shift register Mounting: SMD Case: SOIC16 Number of inputs: 3 Supply voltage: 3...18V DC |
на замовлення 152 шт: термін постачання 21-30 дні (днів) |
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MC14015BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; 3÷18VDC Operating temperature: -55...125°C Kind of package: reel; tape Mounting: SMD Technology: CMOS Kind of integrated circuit: 4bit; shift register Number of inputs: 3 Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: 2 Case: SOIC16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC541MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14 Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Kind of output: 3-state Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting Operating temperature: -40...85°C |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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74AC541MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Quiescent current: 40µA Kind of output: 3-state Kind of package: reel; tape Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting Operating temperature: -40...85°C |
на замовлення 546 шт: термін постачання 21-30 дні (днів) |
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74AC541SC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Quiescent current: 40µA Kind of output: 3-state Kind of package: tube Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting Operating temperature: -40...85°C |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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TL431AILPG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; TO92; bulk; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: bulk Maximum output current: 0.1A |
на замовлення 1169 шт: термін постачання 21-30 дні (днів) |
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TL431CLPG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±2%; TO92; bulk; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: bulk Maximum output current: 0.1A |
на замовлення 1499 шт: термін постачання 21-30 дні (днів) |
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NSI45020AT1G | ONSEMI |
Category: LED drivers Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOD123 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 45V DC Power dissipation: 0.46W Operating current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54CLT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Max. load current: 0.3A Kind of package: reel; tape |
на замовлення 5119 шт: термін постачання 21-30 дні (днів) |
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FOD817C3SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 200-400%@5mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Case: SO4 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: FOD817 |
на замовлення 1476 шт: термін постачання 21-30 дні (днів) |
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74AC138MTC | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; TSSOP16; AC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Mounting: SMD Case: TSSOP16 Manufacturer series: AC Supply voltage: 2...6V DC Kind of package: tube Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC138MTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; TSSOP16; AC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Case: TSSOP16 Mounting: SMD Number of channels: 1 Kind of package: reel; tape Manufacturer series: AC Operating temperature: -40...85°C Supply voltage: 2...6V DC |
на замовлення 393 шт: термін постачання 21-30 дні (днів) |
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FQB8N60CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.6A Pulsed drain current: 30A Power dissipation: 147W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC04MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Family: VHC Kind of package: reel; tape Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33152PG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Supply voltage: 6.1...18V DC Output voltage: 0.8...11.2V Output current: -1.5...1.5A Type of integrated circuit: driver Impulse rise time: 30ns Pulse fall time: 30ns Number of channels: 2 Kind of output: non-inverting Kind of package: tube Protection: undervoltage UVP Kind of integrated circuit: MOSFET gate driver Mounting: THT Operating temperature: -40...85°C Case: DIP8 |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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MC14093BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Mounting: SMD Case: SO14 Operating temperature: -55...125°C Supply voltage: 3...18V DC Number of channels: quad; 4 Quiescent current: 30µA Kind of package: tube Kind of input: with Schmitt trigger Kind of gate: NAND Technology: CMOS Family: HEF4000B Number of inputs: 2 |
на замовлення 546 шт: термін постачання 21-30 дні (днів) |
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MC14093BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; reel,tape Type of integrated circuit: digital Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Number of channels: quad; 4 Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NAND Technology: CMOS Family: HEF4000B Number of inputs: 2 |
на замовлення 2454 шт: термін постачання 21-30 дні (днів) |
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74ACT245SCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; ACT Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Manufacturer series: ACT Kind of integrated circuit: bidirectional; transceiver Operating temperature: -40...85°C |
на замовлення 321 шт: термін постачання 21-30 дні (днів) |
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74ACT245MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; ACT Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Quiescent current: 40µA Kind of output: 3-state Kind of package: reel; tape Manufacturer series: ACT Kind of integrated circuit: bidirectional; transceiver Operating temperature: -40...85°C |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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74ACT245SC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; ACT Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Quiescent current: 40µA Kind of output: 3-state Manufacturer series: ACT Kind of integrated circuit: bidirectional; transceiver Operating temperature: -40...85°C |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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| NRVTSS3100ET3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 3A; SMB; Ufmax: 0.995V; Ifsm: 90A Type of diode: rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.995V Max. forward impulse current: 90A Kind of package: reel; tape Application: automotive industry Max. load current: 6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MOC3061M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 600V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT |
на замовлення 997 шт: термін постачання 21-30 дні (днів) |
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MOC3061SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; zero voltage crossing driver; Gull wing 6 Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: zero voltage crossing driver Case: Gull wing 6 Mounting: SMD Number of channels: 1 Manufacturer series: MOC3061M Slew rate: 1.5kV/μs |
на замовлення 115 шт: термін постачання 21-30 дні (днів) |
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BAV103 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A Case: SOD80 Mounting: SMD Kind of package: reel; tape Capacitance: 5pF Max. off-state voltage: 200V Max. load current: 0.6A Max. forward voltage: 1.25V Load current: 0.5A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 4A Power dissipation: 0.5W Type of diode: switching |
на замовлення 5028 шт: термін постачання 21-30 дні (днів) |
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MC74AC74DG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered |
на замовлення 194 шт: термін постачання 21-30 дні (днів) |
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MC74AC74DR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; reel,tape; 40uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: TTL Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Trigger: positive-edge-triggered |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74AC74DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape; 40uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Trigger: positive-edge-triggered |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33153DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver Case: SO8 Output current: -2...1A Output voltage: 2...13.9V Number of channels: 1 Supply voltage: 11...20V DC Mounting: SMD Operating temperature: -40...105°C Impulse rise time: 55ns Pulse fall time: 55ns Kind of package: reel; tape Kind of output: inverting Protection: over current OCP; short circuit protection SCP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV99LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; 225mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Case: SOT23 Power dissipation: 0.225W Kind of package: reel; tape Max. load current: 0.45A |
на замовлення 14084 шт: термін постачання 21-30 дні (днів) |
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SBAV99LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 2968 шт: термін постачання 21-30 дні (днів) |
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| FCD7N60TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FCA47N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Pulsed drain current: 141A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCA47N60-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Pulsed drain current: 141A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement Technology: SuperFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FCH47N60-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 64mΩ Mounting: THT Gate charge: 187nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FCH47N60-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement Technology: SuperFET® |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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| FCH47N60F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 66mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FCH47N60N | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 368W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Pulsed drain current: 141A Power dissipation: 368W Case: TO247 Gate-source voltage: ±30V On-state resistance: 51.5Ω Mounting: THT Gate charge: 115nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FCH47N60NF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28.9A; Idm: 137.4A; 368W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 28.9A Pulsed drain current: 137.4A Power dissipation: 368W Case: TO247 Gate-source voltage: ±30V On-state resistance: 57.5mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KSA1013YTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed Power dissipation: 0.9W Kind of package: Ammo Pack Case: TO92 Formed Mounting: THT Frequency: 50MHz Collector-emitter voltage: 160V Current gain: 160...320 Collector current: 1A Type of transistor: PNP Polarisation: bipolar |
на замовлення 1241 шт: термін постачання 21-30 дні (днів) |
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1SMB5956BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 4188 шт: термін постачання 21-30 дні (днів) |
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BC546ABU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.625W Case: TO92 Current gain: 110...450 Mounting: THT Kind of package: bulk Frequency: 300MHz |
на замовлення 5407 шт: термін постачання 21-30 дні (днів) |
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BC546BTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.625W Case: TO92 Formed Current gain: 200...450 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
на замовлення 2393 шт: термін постачання 21-30 дні (днів) |
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BC546BTF | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.625W Case: TO92 Formed Current gain: 200...450 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
на замовлення 617 шт: термін постачання 21-30 дні (днів) |
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BC546CTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.625W Case: TO92 Formed Current gain: 110...450 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
на замовлення 691 шт: термін постачання 21-30 дні (днів) |
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MMBFJ177LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA Gate-source voltage: 30V Mounting: SMD Case: SOT23 Gate current: 50mA Drain current: 1.5mA On-state resistance: 300Ω Type of transistor: P-JFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape |
на замовлення 3612 шт: термін постачання 21-30 дні (днів) |
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MJL21194G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264 Mounting: THT Case: TO264 Collector-emitter voltage: 250V Collector current: 16A Type of transistor: NPN Power dissipation: 200W Polarisation: bipolar Kind of package: tube |
на замовлення 118 шт: термін постачання 21-30 дні (днів) |
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| ISL9V3040S3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 430V Collector current: 17A Power dissipation: 150W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5818G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: CASE59 Max. forward voltage: 0.875V Max. forward impulse current: 25A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDS9926A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 466 шт: термін постачання 21-30 дні (днів) |
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| BD243CG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 20
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 20
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 1738 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.06 грн |
| 10+ | 75.87 грн |
| 21+ | 42.16 грн |
| 58+ | 39.84 грн |
| 500+ | 38.35 грн |
| NC7SP14P5X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
товару немає в наявності
В кошику
од. на суму грн.
| NC7WP14P6X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: dual; 2
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-6
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: dual; 2
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-6
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 0.9µA
Kind of input: with Schmitt trigger
товару немає в наявності
В кошику
од. на суму грн.
| HCPL2630M |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 30ns
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7V
Manufacturer series: HCPL2630M
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 30ns
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7V
Manufacturer series: HCPL2630M
на замовлення 856 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 202.86 грн |
| 3+ | 177.16 грн |
| 9+ | 98.67 грн |
| 25+ | 93.44 грн |
| 500+ | 92.69 грн |
| HCPL2630S |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7V
Manufacturer series: HCPL2630M
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7V
Manufacturer series: HCPL2630M
товару немає в наявності
В кошику
од. на суму грн.
| 1N4744ATR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 15V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 15V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
на замовлення 963 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 16.10 грн |
| 44+ | 8.67 грн |
| 100+ | 4.56 грн |
| 338+ | 2.59 грн |
| 930+ | 2.45 грн |
| LM2576T-ADJG | |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.3÷37VDC; 3A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.3...37V DC
Output current: 3A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: 0...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.3÷37VDC; 3A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.3...37V DC
Output current: 3A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: 0...125°C
Kind of package: tube
на замовлення 286 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.50 грн |
| 10+ | 88.95 грн |
| 28+ | 83.72 грн |
| BCP56-10T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
на замовлення 3619 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.00 грн |
| 18+ | 20.86 грн |
| 50+ | 16.89 грн |
| 91+ | 9.64 грн |
| 250+ | 9.12 грн |
| NDS332P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Drain-source voltage: -20V
Drain current: -1A
On-state resistance: 0.74Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-3
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Drain-source voltage: -20V
Drain current: -1A
On-state resistance: 0.74Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-3
на замовлення 405 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 37.03 грн |
| 15+ | 26.24 грн |
| 50+ | 21.30 грн |
| 69+ | 12.78 грн |
| 188+ | 12.11 грн |
| MMBFJ310LT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 24mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 24mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 230 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 38.64 грн |
| 18+ | 21.60 грн |
| 25+ | 17.72 грн |
| 94+ | 9.42 грн |
| MBR20200CTG | |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.9V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.9V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
на замовлення 143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 209.30 грн |
| 3+ | 173.42 грн |
| 7+ | 139.04 грн |
| 18+ | 131.56 грн |
| MC14015BDG |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 2
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: 4bit; shift register
Mounting: SMD
Case: SOIC16
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 2
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: 4bit; shift register
Mounting: SMD
Case: SOIC16
Number of inputs: 3
Supply voltage: 3...18V DC
на замовлення 152 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 85.33 грн |
| 10+ | 47.09 грн |
| 24+ | 37.30 грн |
| 48+ | 33.94 грн |
| MC14015BDR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Technology: CMOS
Kind of integrated circuit: 4bit; shift register
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 2
Case: SOIC16
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Technology: CMOS
Kind of integrated circuit: 4bit; shift register
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 2
Case: SOIC16
товару немає в наявності
В кошику
од. на суму грн.
| 74AC541MTC |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 52.32 грн |
| 11+ | 35.88 грн |
| 13+ | 30.50 грн |
| 25+ | 24.82 грн |
| 74AC541MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
на замовлення 546 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 91.77 грн |
| 10+ | 39.17 грн |
| 32+ | 27.73 грн |
| 87+ | 26.24 грн |
| 500+ | 25.27 грн |
| 74AC541SC |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: tube
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: tube
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.44 грн |
| TL431AILPG |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: bulk
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: bulk
Maximum output current: 0.1A
на замовлення 1169 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.16 грн |
| 12+ | 32.14 грн |
| 25+ | 26.98 грн |
| 55+ | 16.15 грн |
| 150+ | 15.25 грн |
| 1000+ | 14.73 грн |
| TL431CLPG | |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: bulk
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: bulk
Maximum output current: 0.1A
на замовлення 1499 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 45.08 грн |
| 13+ | 29.08 грн |
| 25+ | 24.07 грн |
| 50+ | 20.78 грн |
| 76+ | 11.59 грн |
| 209+ | 10.99 грн |
| NSI45020AT1G |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V DC
Power dissipation: 0.46W
Operating current: 20mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V DC
Power dissipation: 0.46W
Operating current: 20mA
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| BAT54CLT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
на замовлення 5119 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.24 грн |
| 66+ | 5.68 грн |
| 89+ | 4.24 грн |
| 127+ | 2.96 грн |
| 144+ | 2.60 грн |
| 867+ | 1.02 грн |
| 2386+ | 0.96 грн |
| FOD817C3SD |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 200-400%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 200-400%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
на замовлення 1476 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 32.20 грн |
| 19+ | 20.11 грн |
| 25+ | 16.30 грн |
| 50+ | 13.83 грн |
| 73+ | 12.18 грн |
| 100+ | 11.66 грн |
| 200+ | 11.51 грн |
| 500+ | 11.06 грн |
| 74AC138MTC |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; TSSOP16; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Manufacturer series: AC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; TSSOP16; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Manufacturer series: AC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -40...85°C
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В кошику
од. на суму грн.
| 74AC138MTCX |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; TSSOP16; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Case: TSSOP16
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; TSSOP16; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Case: TSSOP16
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
на замовлення 393 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.86 грн |
| 10+ | 37.82 грн |
| 25+ | 32.59 грн |
| 34+ | 26.24 грн |
| 93+ | 24.82 грн |
| 250+ | 24.67 грн |
| FQB8N60CTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 30A
Power dissipation: 147W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 30A
Power dissipation: 147W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| 74VHC04MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Family: VHC
Kind of package: reel; tape
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Family: VHC
Kind of package: reel; tape
Number of inputs: 1
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В кошику
од. на суму грн.
| MC33152PG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Supply voltage: 6.1...18V DC
Output voltage: 0.8...11.2V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Impulse rise time: 30ns
Pulse fall time: 30ns
Number of channels: 2
Kind of output: non-inverting
Kind of package: tube
Protection: undervoltage UVP
Kind of integrated circuit: MOSFET gate driver
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Supply voltage: 6.1...18V DC
Output voltage: 0.8...11.2V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Impulse rise time: 30ns
Pulse fall time: 30ns
Number of channels: 2
Kind of output: non-inverting
Kind of package: tube
Protection: undervoltage UVP
Kind of integrated circuit: MOSFET gate driver
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 201.25 грн |
| MC14093BDG | |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Number of channels: quad; 4
Quiescent current: 30µA
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: HEF4000B
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Number of channels: quad; 4
Quiescent current: 30µA
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: HEF4000B
Number of inputs: 2
на замовлення 546 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.54 грн |
| 12+ | 32.59 грн |
| 25+ | 27.66 грн |
| 43+ | 20.63 грн |
| 118+ | 19.51 грн |
| 275+ | 18.76 грн |
| MC14093BDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; reel,tape
Type of integrated circuit: digital
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Number of channels: quad; 4
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: HEF4000B
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; reel,tape
Type of integrated circuit: digital
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Number of channels: quad; 4
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: HEF4000B
Number of inputs: 2
на замовлення 2454 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 46.69 грн |
| 14+ | 28.40 грн |
| 25+ | 24.97 грн |
| 50+ | 22.50 грн |
| 55+ | 16.15 грн |
| 151+ | 15.25 грн |
| 500+ | 14.65 грн |
| 74ACT245SCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Manufacturer series: ACT
Kind of integrated circuit: bidirectional; transceiver
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Manufacturer series: ACT
Kind of integrated circuit: bidirectional; transceiver
Operating temperature: -40...85°C
на замовлення 321 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 97.40 грн |
| 10+ | 65.41 грн |
| 22+ | 41.64 грн |
| 58+ | 39.32 грн |
| 74ACT245MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Kind of integrated circuit: bidirectional; transceiver
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Kind of integrated circuit: bidirectional; transceiver
Operating temperature: -40...85°C
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.60 грн |
| 10+ | 51.05 грн |
| 36+ | 24.89 грн |
| 74ACT245SC |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Kind of output: 3-state
Manufacturer series: ACT
Kind of integrated circuit: bidirectional; transceiver
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Kind of output: 3-state
Manufacturer series: ACT
Kind of integrated circuit: bidirectional; transceiver
Operating temperature: -40...85°C
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.80 грн |
| 10+ | 42.61 грн |
| NRVTSS3100ET3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMB; Ufmax: 0.995V; Ifsm: 90A
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.995V
Max. forward impulse current: 90A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 6A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMB; Ufmax: 0.995V; Ifsm: 90A
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.995V
Max. forward impulse current: 90A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 6A
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В кошику
од. на суму грн.
| MOC3061M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
на замовлення 997 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.01 грн |
| 12+ | 33.56 грн |
| 32+ | 28.18 грн |
| 86+ | 26.69 грн |
| 500+ | 25.79 грн |
| MOC3061SM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; zero voltage crossing driver; Gull wing 6
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3061M
Slew rate: 1.5kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; zero voltage crossing driver; Gull wing 6
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3061M
Slew rate: 1.5kV/μs
на замовлення 115 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.62 грн |
| 10+ | 60.55 грн |
| 18+ | 50.83 грн |
| 48+ | 47.84 грн |
| 100+ | 45.60 грн |
| BAV103 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Case: SOD80
Mounting: SMD
Kind of package: reel; tape
Capacitance: 5pF
Max. off-state voltage: 200V
Max. load current: 0.6A
Max. forward voltage: 1.25V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Case: SOD80
Mounting: SMD
Kind of package: reel; tape
Capacitance: 5pF
Max. off-state voltage: 200V
Max. load current: 0.6A
Max. forward voltage: 1.25V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Type of diode: switching
на замовлення 5028 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 16.90 грн |
| 31+ | 12.11 грн |
| 55+ | 6.89 грн |
| 100+ | 5.74 грн |
| 259+ | 3.41 грн |
| 711+ | 3.23 грн |
| 1000+ | 3.12 грн |
| 1300+ | 3.10 грн |
| MC74AC74DG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
на замовлення 194 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 83.72 грн |
| 10+ | 39.62 грн |
| 25+ | 33.79 грн |
| 42+ | 20.86 грн |
| 116+ | 19.73 грн |
| MC74AC74DR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; reel,tape; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; reel,tape; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Trigger: positive-edge-triggered
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| MC74AC74DTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Trigger: positive-edge-triggered
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| MC33153DR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: reel; tape
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: reel; tape
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
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| BAV99LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; 225mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; 225mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
на замовлення 14084 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 76+ | 5.30 грн |
| 103+ | 3.65 грн |
| 250+ | 1.72 грн |
| 500+ | 1.02 грн |
| 1000+ | 0.73 грн |
| 3000+ | 0.71 грн |
| SBAV99LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 2968 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 9.66 грн |
| 60+ | 6.28 грн |
| 88+ | 4.26 грн |
| 104+ | 3.60 грн |
| 500+ | 3.39 грн |
| FCD7N60TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FCA47N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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| FCA47N60-F109 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
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| FCH47N60-F085 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 187nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 187nC
Kind of package: tube
Kind of channel: enhancement
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| FCH47N60-F133 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 917.70 грн |
| 2+ | 651.07 грн |
| 3+ | 650.32 грн |
| 4+ | 615.19 грн |
| FCH47N60F-F085 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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| FCH47N60N |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 368W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 51.5Ω
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 368W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 51.5Ω
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Kind of channel: enhancement
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| FCH47N60NF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28.9A; Idm: 137.4A; 368W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28.9A
Pulsed drain current: 137.4A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 57.5mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28.9A; Idm: 137.4A; 368W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28.9A
Pulsed drain current: 137.4A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 57.5mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
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| KSA1013YTA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Power dissipation: 0.9W
Kind of package: Ammo Pack
Case: TO92 Formed
Mounting: THT
Frequency: 50MHz
Collector-emitter voltage: 160V
Current gain: 160...320
Collector current: 1A
Type of transistor: PNP
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Power dissipation: 0.9W
Kind of package: Ammo Pack
Case: TO92 Formed
Mounting: THT
Frequency: 50MHz
Collector-emitter voltage: 160V
Current gain: 160...320
Collector current: 1A
Type of transistor: PNP
Polarisation: bipolar
на замовлення 1241 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 37.84 грн |
| 16+ | 24.59 грн |
| 78+ | 11.44 грн |
| 213+ | 10.76 грн |
| 1000+ | 10.39 грн |
| 1SMB5956BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 4188 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 22.54 грн |
| 26+ | 14.50 грн |
| 32+ | 11.81 грн |
| 50+ | 7.77 грн |
| 100+ | 6.80 грн |
| 362+ | 6.43 грн |
| 2500+ | 6.28 грн |
| BC546ABU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92
Current gain: 110...450
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92
Current gain: 110...450
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 5407 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 16.90 грн |
| 39+ | 9.72 грн |
| 53+ | 7.09 грн |
| 100+ | 6.17 грн |
| 225+ | 3.92 грн |
| 618+ | 3.72 грн |
| 5000+ | 3.69 грн |
| BC546BTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
на замовлення 2393 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 15.30 грн |
| 48+ | 7.92 грн |
| 59+ | 6.41 грн |
| 100+ | 5.83 грн |
| 275+ | 3.21 грн |
| 756+ | 3.03 грн |
| BC546BTF |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 617 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 15.30 грн |
| 45+ | 8.45 грн |
| 61+ | 6.22 грн |
| 100+ | 5.37 грн |
| 277+ | 3.18 грн |
| BC546CTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 110...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 110...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
на замовлення 691 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.08 грн |
| 53+ | 7.18 грн |
| 78+ | 4.84 грн |
| 100+ | 4.11 грн |
| 254+ | 3.48 грн |
| MMBFJ177LT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Gate-source voltage: 30V
Mounting: SMD
Case: SOT23
Gate current: 50mA
Drain current: 1.5mA
On-state resistance: 300Ω
Type of transistor: P-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Gate-source voltage: 30V
Mounting: SMD
Case: SOT23
Gate current: 50mA
Drain current: 1.5mA
On-state resistance: 300Ω
Type of transistor: P-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
на замовлення 3612 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 12.72 грн |
| 35+ | 10.76 грн |
| 100+ | 9.34 грн |
| 111+ | 7.92 грн |
| 305+ | 7.48 грн |
| 1000+ | 7.18 грн |
| MJL21194G | |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 250V
Collector current: 16A
Type of transistor: NPN
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Mounting: THT
Case: TO264
Collector-emitter voltage: 250V
Collector current: 16A
Type of transistor: NPN
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
на замовлення 118 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 382.38 грн |
| 4+ | 243.68 грн |
| 10+ | 230.23 грн |
| ISL9V3040S3ST |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| 1N5818G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: CASE59
Max. forward voltage: 0.875V
Max. forward impulse current: 25A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: CASE59
Max. forward voltage: 0.875V
Max. forward impulse current: 25A
товару немає в наявності
В кошику
од. на суму грн.
| FDS9926A |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 466 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 60.38 грн |
| 11+ | 36.40 грн |
| 37+ | 23.99 грн |
| 102+ | 22.65 грн |