| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FCD850N80Z | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 75W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Pulsed drain current: 18A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
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| FCPF650N80Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 24A; 30.5W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 24A Power dissipation: 30.5W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement |
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| FCD2250N80Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 6.5A; 39W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Pulsed drain current: 6.5A Power dissipation: 39W Case: DPAK Gate-source voltage: ±20V On-state resistance: 2.25Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
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| FCPF850N80Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 18A; 28.4W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 18A Power dissipation: 28.4W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
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| NTPF450N80S3Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 25A; 29.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 25A Power dissipation: 29.5W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 19.3nC Kind of package: tube Kind of channel: enhancement |
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| FCPF2250N80Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.5A; Idm: 6.5A; 21.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.5A Pulsed drain current: 6.5A Power dissipation: 21.9W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.25Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
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| NGTB35N65FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3 Type of transistor: IGBT Power dissipation: 150W Case: TO247-3 Mounting: THT Gate charge: 125nC Kind of package: tube Collector-emitter voltage: 650V Collector current: 35A Gate-emitter voltage: ±20V Pulsed collector current: 120A |
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GBU8M | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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| DTA124XET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 80...130 Power dissipation: 0.3W Quantity in set/package: 3000pcs. |
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BZX84C33LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
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| SZBZX84C33LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C Application: automotive industry |
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BZX84C33LT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
на замовлення 9900 шт: термін постачання 21-30 дні (днів) |
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| SZBZX84C33ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
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74ACT139MTC | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP16; ACT; ACT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Mounting: SMD Case: TSSOP16 Manufacturer series: ACT Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: tube Quiescent current: 40µA |
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74ACT139MTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP16; ACT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 1 Mounting: SMD Case: TSSOP16 Manufacturer series: ACT Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Quiescent current: 40µA |
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74ACT139SCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SO16; ACT; ACT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 1 Mounting: SMD Case: SO16 Manufacturer series: ACT Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Quiescent current: 40µA |
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MC74ACT139DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 3 Technology: TTL Mounting: SMD Case: SOIC16 Manufacturer series: ACT Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
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| MC74ACT139DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 3 Technology: TTL Mounting: SMD Case: TSSOP16 Manufacturer series: ACT Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
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FDS5351 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8 Polarisation: unipolar Kind of package: reel; tape Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: PowerTrench® Gate charge: 27nC On-state resistance: 58.8mΩ Power dissipation: 5W Drain current: 6.1A Gate-source voltage: ±20V Drain-source voltage: 60V |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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| 1N5938BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 36V; reel,tape; CASE59; single diode; 1uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N59xxB |
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FDD306P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK Case: DPAK Mounting: SMD Kind of channel: enhancement Technology: PowerTrench® Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -12V Drain current: -6.7A Gate charge: 21nC On-state resistance: 90mΩ Power dissipation: 52W Gate-source voltage: ±8V |
на замовлення 352 шт: термін постачання 21-30 дні (днів) |
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| FAN54120MP420X | ONSEMI |
Category: Battery and battery cells controllers Description: IC: PMIC; battery charging controller; Iout: 500mA; DFN6; 4÷6VDC Operating temperature: -30...85°C Output current: 0.5A Supply voltage: 4...6V DC Rechargeable battery voltage: 4.2V Mounting: SMD Kind of integrated circuit: battery charging controller Case: DFN6 Type of integrated circuit: PMIC Kind of package: reel; tape Number of rechargeable batteries: 1 x Li-Ion / Li-Po Interface: USB |
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RFD3055LESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 38W Case: DPAK Gate-source voltage: ±16V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2477 шт: термін постачання 21-30 дні (днів) |
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RFD12N06RLESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±16V On-state resistance: 75mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Technology: UltraFET® |
на замовлення 1438 шт: термін постачання 21-30 дні (днів) |
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| FDMC8360LET40 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 658A Power dissipation: 75W Case: Power33 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMC86570LET60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Pulsed drain current: 436A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMD8240LET40 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 73A Pulsed drain current: 489A Power dissipation: 50W Case: PQFN12 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMD8260LET60 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 304A Power dissipation: 44W Case: PQFN12 Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
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| FSV340AF | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape Mounting: SMD Load current: 3A Max. forward voltage: 0.5V Max. forward impulse current: 80A Max. off-state voltage: 40V Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMA flat |
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BD243C | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 3MHz |
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TIP112G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 2W |
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| BAT54S | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.29W |
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NDS9952A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3.7/-2.9A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 130/210mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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SMUN5235DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ Type of transistor: NPN x2 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Kind of transistor: BRT |
на замовлення 5980 шт: термін постачання 21-30 дні (днів) |
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SMUN5231DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ Type of transistor: NPN x2 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Kind of transistor: BRT |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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SMUN5335DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Kind of transistor: BRT; complementary pair |
на замовлення 4090 шт: термін постачання 21-30 дні (днів) |
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| FDBL0065N40 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Power dissipation: 429W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 0.65mΩ Mounting: SMD Gate charge: 0.22µC Kind of channel: enhancement |
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MC74LVXT4053DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Case: SOIC16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT Number of inputs: 6 |
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| MC74LVXT4053DTG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT Number of inputs: 6 |
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| MC74LVXT4053DTRG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT Number of inputs: 6 |
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MC74LVXT4066DTRG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; CMOS Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Case: TSSOP14 Supply voltage: 2...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 160µA Technology: CMOS |
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LM324M | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14; tube Type of integrated circuit: operational amplifier Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO14 Operating temperature: 0...70°C Kind of package: tube |
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MMSZ5242BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 243 шт: термін постачання 21-30 дні (днів) |
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| SZMMSZ5242BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
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MMBT2222A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 1W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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| FCD850N80Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCPF650N80Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 24A; 30.5W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 24A
Power dissipation: 30.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 24A; 30.5W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 24A
Power dissipation: 30.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
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| FCD2250N80Z |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 6.5A; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Pulsed drain current: 6.5A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.25Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 6.5A; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Pulsed drain current: 6.5A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.25Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCPF850N80Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 18A; 28.4W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 18A
Power dissipation: 28.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 18A; 28.4W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 18A
Power dissipation: 28.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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| NTPF450N80S3Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 25A; 29.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 25A
Power dissipation: 29.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 19.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 25A; 29.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 25A
Power dissipation: 29.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 19.3nC
Kind of package: tube
Kind of channel: enhancement
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| FCPF2250N80Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.5A; Idm: 6.5A; 21.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.5A
Pulsed drain current: 6.5A
Power dissipation: 21.9W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.25Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.5A; Idm: 6.5A; 21.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.5A
Pulsed drain current: 6.5A
Power dissipation: 21.9W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.25Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
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| NGTB35N65FL2WG |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Collector-emitter voltage: 650V
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Collector-emitter voltage: 650V
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
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| GBU8M |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| DTA124XET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...130
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...130
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
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| BZX84C33LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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| SZBZX84C33LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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| BZX84C33LT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 9900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.97 грн |
| 105+ | 3.88 грн |
| 208+ | 1.95 грн |
| 500+ | 1.63 грн |
| 1000+ | 1.36 грн |
| 5000+ | 1.30 грн |
| SZBZX84C33ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| 74ACT139MTC |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Quiescent current: 40µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Quiescent current: 40µA
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| 74ACT139MTCX |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP16; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 1
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP16; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 1
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
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| 74ACT139SCX |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SO16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 1
Mounting: SMD
Case: SO16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SO16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 1
Mounting: SMD
Case: SO16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
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| MC74ACT139DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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| MC74ACT139DTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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| FDS5351 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Gate charge: 27nC
On-state resistance: 58.8mΩ
Power dissipation: 5W
Drain current: 6.1A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Gate charge: 27nC
On-state resistance: 58.8mΩ
Power dissipation: 5W
Drain current: 6.1A
Gate-source voltage: ±20V
Drain-source voltage: 60V
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.35 грн |
| 10+ | 41.89 грн |
| 25+ | 37.12 грн |
| 1N5938BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
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| FDD306P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Gate charge: 21nC
On-state resistance: 90mΩ
Power dissipation: 52W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Gate charge: 21nC
On-state resistance: 90mΩ
Power dissipation: 52W
Gate-source voltage: ±8V
на замовлення 352 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.06 грн |
| 10+ | 51.67 грн |
| 50+ | 41.57 грн |
| 100+ | 37.68 грн |
| 250+ | 37.28 грн |
| FAN54120MP420X |
|
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Iout: 500mA; DFN6; 4÷6VDC
Operating temperature: -30...85°C
Output current: 0.5A
Supply voltage: 4...6V DC
Rechargeable battery voltage: 4.2V
Mounting: SMD
Kind of integrated circuit: battery charging controller
Case: DFN6
Type of integrated circuit: PMIC
Kind of package: reel; tape
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Interface: USB
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Iout: 500mA; DFN6; 4÷6VDC
Operating temperature: -30...85°C
Output current: 0.5A
Supply voltage: 4...6V DC
Rechargeable battery voltage: 4.2V
Mounting: SMD
Kind of integrated circuit: battery charging controller
Case: DFN6
Type of integrated circuit: PMIC
Kind of package: reel; tape
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Interface: USB
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| RFD3055LESM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2477 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.96 грн |
| 16+ | 25.31 грн |
| 25+ | 25.23 грн |
| RFD12N06RLESM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UltraFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UltraFET®
на замовлення 1438 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.90 грн |
| 10+ | 55.07 грн |
| 50+ | 43.02 грн |
| 100+ | 40.43 грн |
| FDMC8360LET40 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 658A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 658A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMC86570LET60 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMD8240LET40 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 489A
Power dissipation: 50W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 489A
Power dissipation: 50W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMD8260LET60 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 304A
Power dissipation: 44W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 304A
Power dissipation: 44W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FSV340AF |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA flat
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA flat
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| BD243C |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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| TIP112G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
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| BAT54S |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
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| NDS9952A |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.7/-2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 130/210mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.7/-2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 130/210mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| SMUN5235DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 5980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.80 грн |
| 43+ | 9.46 грн |
| 60+ | 6.78 грн |
| 100+ | 5.85 грн |
| 500+ | 4.29 грн |
| 1000+ | 3.80 грн |
| 3000+ | 3.20 грн |
| SMUN5231DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.84 грн |
| 500+ | 5.40 грн |
| 3000+ | 3.18 грн |
| SMUN5335DW1T1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
на замовлення 4090 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 12.71 грн |
| 40+ | 10.51 грн |
| 100+ | 9.30 грн |
| 500+ | 8.41 грн |
| 3000+ | 8.09 грн |
| FDBL0065N40 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.65mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.65mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
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| MC74LVXT4053DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
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| MC74LVXT4053DTG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
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| MC74LVXT4053DTRG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
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| MC74LVXT4066DTRG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; CMOS
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Case: TSSOP14
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 160µA
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; CMOS
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Case: TSSOP14
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 160µA
Technology: CMOS
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| LM324M |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14; tube
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: 0...70°C
Kind of package: tube
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14; tube
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: 0...70°C
Kind of package: tube
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| MMSZ5242BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 243 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.58 грн |
| 67+ | 6.07 грн |
| 118+ | 3.44 грн |
| 151+ | 2.68 грн |
| 200+ | 2.13 грн |
| SZMMSZ5242BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| MMBT2222A |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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