| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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PN2907ARLRA | onsemi |
 Description: TRANS PNP 60V 0.6A TO92Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
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MPS2907ARLRA | onsemi |
Description: TRANS PNP SS GP 60V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBTA05LT1 | onsemi |
Description: TRANS DRIVER SS NPN 60V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MPSA56RLRA | onsemi |
Description: TRANS PNP SS GP 80V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MPSA13RLRA | onsemi |
Description: TRANS NPN DARL 30V 0.5A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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MMBT5550LT1 | onsemi |
Description: TRANS SS NPN 140V HV SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBTA13LT1 | onsemi |
Description: TRANS SS DARL NPN 30V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBTA14LT1 | onsemi |
Description: TRANS SS DARL NPN 30V SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 10mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 225 mW |
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MMBTA55LT1 | onsemi |
Description: TRANS DRIVER SS PNP 60V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBTA63LT1 | onsemi |
Description: TRANS SS DARL PNP 30V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBTA64LT1 | onsemi |
Description: TRANS SS DARL PNP 30V SOT23 Packaging: Cut Tape (CT) |
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MPS4124RLRA | onsemi |
Description: TRANS NPN SS GP 25V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MPS4126RLRA | onsemi |
Description: TRANS PNP 25V 0.2A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V Frequency - Transition: 170MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
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MPSA55RLRA | onsemi |
Description: TRANS PNP SS GP 60V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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2N7002LT1 | onsemi |
Description: MOSFET N-CH 60V 115MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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MPSA27RLRA | onsemi |
Description: TRANS NPN DARL SS 60V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MPSA29RLRP | onsemi |
Description: TRANS NPN DARL SS 100V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MPSA42RLRA | onsemi |
Description: TRANS NPN SS GP 500MA 300V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MPSA92RLRA | onsemi |
Description: TRANS PNP SS GP HV 300V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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2N5551RLRA | onsemi |
Description: TRANS NPN 160V 0.6A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
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MBT3906DW1T1 | onsemi |
Description: TRANS 2PNP 40V 0.2A SOT363 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MBT3946DW1T1 | onsemi |
Description: TRANS DUAL GP 200MA 40V SOT363 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBTH10LT1 | onsemi |
Description: TRANS SS VHF NPN 25V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MPSH10RLRA | onsemi |
Description: TRANS NPN VHF/UHF SS 25V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBT6427LT1 | onsemi |
Description: TRANS SS DARL NPN 40V SOT23 Packaging: Cut Tape (CT) |
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MMBT6429LT1 | onsemi |
Description: TRANS SS NPN 45V LN SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V Frequency - Transition: 700MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW |
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MMBF170LT1 | onsemi |
Description: MOSFET N-CH 60V 500MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
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MPS8098RLRA | onsemi |
Description: TRANS NPN 60V 0.5A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
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MPS8099RLRA | onsemi |
Description: TRANS NPN SS GP 80V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MPS8598RLRA | onsemi |
Description: TRANS PNP 60V 0.5A TO92 |
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MPS8599RLRA | onsemi |
Description: TRANS PNP SS GP 80V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MPS751RLRA | onsemi |
Description: TRANS PNP SS 60V HI CURRENT TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBT918LT1 | onsemi |
Description: TRANS SS VHF NPN 15V SOT23 Packaging: Cut Tape (CT) |
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2N6520RLRA | onsemi |
Description: TRANS PNP 350V 0.5A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
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MMBT8099LT1 | onsemi |
Description: TRANS NPN 80V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 225 mW |
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MPSA44RLRA | onsemi |
Description: TRANS NPN SS GP 400V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MPSW06RLRA | onsemi |
Description: TRANS NPN SS GP 1W 80V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MPSW42RLRA | onsemi |
Description: TRANS NPN SS 1W 300V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBF0201NLT1 | onsemi |
Description: MOSFET N-CH 20V 300MA SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V |
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MMBF2201NT1 | onsemi |
Description: MOSFET N-CH 20V 300MA SOT-323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SC-70-3 (SOT323) Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V |
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PZTA42T1 | onsemi |
Description: TRANS SS NPN 50MA 300V SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.5 W |
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PZTA92T1 | onsemi |
Description: TRANS SS PNP 500MA 300V SOT223 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBF4391LT1 | onsemi |
Description: JFET SS N-CHAN 30V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBF4392LT1 | onsemi |
Description: JFET SS N-CHAN 30V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBF4393LT1 | onsemi |
Description: JFET N-CH 30V 0.225W SOT23 Packaging: Cut Tape (CT) |
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MMBF4416LT1 | onsemi |
Description: MOSFET SS N-CHAN VHF 30V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBF5457LT1 | onsemi |
Description: JFET N-CH 25V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Power - Max: 225 mW Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V |
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MMBF5460LT1 | onsemi |
Description: JFET P-CH 40V 0.225W SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBF5484LT1 | onsemi |
Description: SS N-CHAN 25V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBFJ175LT1 | onsemi |
Description: SS P-CHAN 25V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBFJ177LT1 | onsemi |
Description: SS P-CHAN 25V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBFJ309LT1 | onsemi |
Description: SS N-CHAN 25V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBFJ310LT1 | onsemi |
Description: RF MOSFET N-CH JFET 10V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBFU310LT1 | onsemi |
Description: SS N-CHAN 25V SOT23 Packaging: Cut Tape (CT) |
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NTGS3446T1 | onsemi |
Description: MOSFET N-CH 20V 2.5A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V |
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NTF3055-100T1 | onsemi |
Description: MOSFET N-CH 60V 3A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 (TO-261) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V |
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MMJT9435T1 | onsemi |
Description: TRANS PNP 30V 3A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V Frequency - Transition: 110MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 3 W |
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NTD12N10T4 | onsemi |
Description: MOSFET N-CH 100V 12A DPAK |
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MMDF2C03HDR2 | onsemi |
Description: MOSFET N/P-CH 30V 4.1A/3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
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MMDF2P02HDR2 | onsemi |
Description: MOSFET 2P-CH 20V 3.3A 8-SOIC |
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| PN2907ARLRA |
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Виробник: onsemi
Description: TRANS PNP 60V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товар відсутній
| MMBTA05LT1 |
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Виробник: onsemi
Description: TRANS DRIVER SS NPN 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS DRIVER SS NPN 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MPSA13RLRA |
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Виробник: onsemi
Description: TRANS NPN DARL 30V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN DARL 30V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товар відсутній
| MMBT5550LT1 |
|
Виробник: onsemi
Description: TRANS SS NPN 140V HV SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS NPN 140V HV SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBTA13LT1 |
|
Виробник: onsemi
Description: TRANS SS DARL NPN 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS DARL NPN 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBTA14LT1 |
|
Виробник: onsemi
Description: TRANS SS DARL NPN 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 10mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
Description: TRANS SS DARL NPN 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 10mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
товар відсутній
| MMBTA55LT1 |
|
Виробник: onsemi
Description: TRANS DRIVER SS PNP 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS DRIVER SS PNP 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBTA63LT1 |
|
Виробник: onsemi
Description: TRANS SS DARL PNP 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS DARL PNP 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MPS4126RLRA |
|
Виробник: onsemi
Description: TRANS PNP 25V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: TRANS PNP 25V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товар відсутній
| 2N7002LT1 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
товар відсутній
| MPSA27RLRA |
|
Виробник: onsemi
Description: TRANS NPN DARL SS 60V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS NPN DARL SS 60V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MPSA29RLRP |
|
Виробник: onsemi
Description: TRANS NPN DARL SS 100V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS NPN DARL SS 100V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MPSA42RLRA |
|
Виробник: onsemi
Description: TRANS NPN SS GP 500MA 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS NPN SS GP 500MA 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MPSA92RLRA |
|
Виробник: onsemi
Description: TRANS PNP SS GP HV 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS PNP SS GP HV 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| 2N5551RLRA |
|
Виробник: onsemi
Description: TRANS NPN 160V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Description: TRANS NPN 160V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
товар відсутній
| MBT3906DW1T1 |
|
Виробник: onsemi
Description: TRANS 2PNP 40V 0.2A SOT363
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS 2PNP 40V 0.2A SOT363
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MBT3946DW1T1 |
|
Виробник: onsemi
Description: TRANS DUAL GP 200MA 40V SOT363
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS DUAL GP 200MA 40V SOT363
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBTH10LT1 |
|
Виробник: onsemi
Description: TRANS SS VHF NPN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS VHF NPN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MPSH10RLRA |
|
Виробник: onsemi
Description: TRANS NPN VHF/UHF SS 25V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS NPN VHF/UHF SS 25V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBT6429LT1 |
|
Виробник: onsemi
Description: TRANS SS NPN 45V LN SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Description: TRANS SS NPN 45V LN SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
товар відсутній
| MMBF170LT1 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
| MPS8098RLRA |
|
Виробник: onsemi
Description: TRANS NPN 60V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS NPN 60V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товар відсутній
| MPS751RLRA |
|
Виробник: onsemi
Description: TRANS PNP SS 60V HI CURRENT TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS PNP SS 60V HI CURRENT TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| 2N6520RLRA |
|
Виробник: onsemi
Description: TRANS PNP 350V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: TRANS PNP 350V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
товар відсутній
| MMBT8099LT1 |
|
Виробник: onsemi
Description: TRANS NPN 80V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
Description: TRANS NPN 80V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
товар відсутній
| MPSW06RLRA |
|
Виробник: onsemi
Description: TRANS NPN SS GP 1W 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS NPN SS GP 1W 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBF0201NLT1 |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 300MA SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Description: MOSFET N-CH 20V 300MA SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
товар відсутній
| MMBF2201NT1 |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 300MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Description: MOSFET N-CH 20V 300MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
товар відсутній
| PZTA42T1 |
|
Виробник: onsemi
Description: TRANS SS NPN 50MA 300V SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
Description: TRANS SS NPN 50MA 300V SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
товар відсутній
| PZTA92T1 |
|
Виробник: onsemi
Description: TRANS SS PNP 500MA 300V SOT223
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS PNP 500MA 300V SOT223
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBF4416LT1 |
|
Виробник: onsemi
Description: MOSFET SS N-CHAN VHF 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: MOSFET SS N-CHAN VHF 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBF5457LT1 |
|
Виробник: onsemi
Description: JFET N-CH 25V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Description: JFET N-CH 25V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
товар відсутній
| MMBF5460LT1 |
|
Виробник: onsemi
Description: JFET P-CH 40V 0.225W SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: JFET P-CH 40V 0.225W SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBFJ310LT1 |
|
Виробник: onsemi
Description: RF MOSFET N-CH JFET 10V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: RF MOSFET N-CH JFET 10V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| NTGS3446T1 |
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Виробник: onsemi
Description: MOSFET N-CH 20V 2.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
Description: MOSFET N-CH 20V 2.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
товар відсутній
| NTF3055-100T1 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
товар відсутній
| MMJT9435T1 |
|
Виробник: onsemi
Description: TRANS PNP 30V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3 W
Description: TRANS PNP 30V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3 W
товар відсутній
| MMDF2C03HDR2 |
|
Виробник: onsemi
Description: MOSFET N/P-CH 30V 4.1A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 4.1A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
товар відсутній