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NTLUS020N03CTAG ONSEMI ntlus020n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Pulsed drain current: 24A
Power dissipation: 1.52W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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DFB20100 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2D936488840DC&compId=DFB20xx.pdf?ci_sign=acc8c342310d07484802840a4e397ecb76a692aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Max. forward impulse current: 250A
Leads: flat pin
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Type of bridge rectifier: single-phase
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MC100LVEP11DR2G MC100LVEP11DR2G ONSEMI mc10lvep11-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 2.375÷3.8VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; fanout buffer
Supply voltage: 2.375...3.8V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
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NB3L553MNR4G NB3L553MNR4G ONSEMI 0900766b8125d51f.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Supply voltage: 2.375...5.25V DC
Mounting: SMD
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
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NB3N551DR2G NB3N551DR2G ONSEMI nb3n551-d.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS; 3÷5.5VDC; SMD; SO8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Supply voltage: 3...5.5V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Technology: CMOS
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NB3RL02FCT2G ONSEMI nb3rl02-d.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 2; 2.3÷5.5VDC; SMD; WLCSP8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: WLCSP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 2
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NB6L11SMNG ONSEMI nb6l11s-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 2; CMOS,LVDS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Supply voltage: 3.8V DC
Mounting: SMD
Case: QFN16
Operating temperature: -40...85°C
Kind of package: tube
Number of channels: 2
Technology: CMOS; LVDS; TTL
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NB6N11SMNR2G ONSEMI nb6n11s-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 1; CMOS,TTL; 3.8VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Supply voltage: 3.8V DC
Mounting: SMD
Case: QFN16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Technology: CMOS; TTL
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NB6N14SMNR2G ONSEMI nb6n14s-d.pdf Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 1; 3÷3.6VDC; SMD; QFN16
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: QFN16
Operating temperature: -40...85°C
Number of channels: 1
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MUN5211DW1T1G MUN5211DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1455BDF25C0CE&compId=MUN5211DW1.PDF?ci_sign=3cf432a5e8d799c49791300d0639c0541b0793dd Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 60
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SMUN5211DW1T1G SMUN5211DW1T1G ONSEMI dtc114ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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NTD20N06T4G ONSEMI ntd20n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTDV20N06T4G-VF01 ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDPF320N06L FDPF320N06L ONSEMI fdpf320n06l-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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MC74AC125DR2G MC74AC125DR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
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SS23FA ONSEMI ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
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6N137M 6N137M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED39EBACC9E606C29E4&compId=6N137.pdf?ci_sign=3f2adbed7e697dc552a45162076791d11ab83709 Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
Slew rate: 2.5kV/μs
CTR@If: 19-50%@16mA
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SZESD7351HT1G ONSEMI esd7351-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD323; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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SZ1SMB5927BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FDA16N50-F109 FDA16N50-F109 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD923142AC3A0C7&compId=FDA16N50_F109.PDF?ci_sign=c603ddf6113d634b6762760ffa586cc84b7053d3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
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FDA16N50LDTU ONSEMI FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw fda16n50ldtu-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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1N5239BTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 1N52xxB
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FDG1024NZ FDG1024NZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECEAA033AFB1E28&compId=FDG1024NZ.pdf?ci_sign=2dd81f2da8a73f94804271db1a5248d982297911 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Case: SC70-6; SC88; SOT363
Drain-source voltage: 20V
Drain current: 1.2A
On-state resistance: 389mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.6nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
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FST3125DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278DD72EE0D3&compId=74FST3125.pdf?ci_sign=40b3fc8bc7d6f9f64987e32314b427484f5ec79f Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 4
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FST3125MTCX FST3125MTCX ONSEMI 74fst3125.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; CMOS,TTL; SMD; TSSOP14; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 3µA
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NCP110AMX085TBG ONSEMI ncp110-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.85V; 200mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.85V
Output current: 0.2A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP110
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.1...5.5V
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NCP130BMX080TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 0.15V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0.8...5.5V
Output current: 0.3A
Output voltage: 0.8V
Manufacturer series: NCP130
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Case: XDFN6
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NCP114AMX080TCG ONSEMI ncp114-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; uDFN4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.5V
Output current: 0.3A
Output voltage: 0.8V
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Case: uDFN4
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NCP130AMX080TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 0.15V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0.8...5.5V
Output current: 0.3A
Output voltage: 0.8V
Manufacturer series: NCP130
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Case: XDFN6
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NCP110AMX080TBG ONSEMI ncp110-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+9.95 грн
Мінімальне замовлення: 5000
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MUN5135DW1T1G MUN5135DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EA7491EEBC6749&compId=MUN5135DW1.PDF?ci_sign=2947b13475a6c547a8a5f225ab134ad9506666c4 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Collector-emitter voltage: 50V
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NTBG030N120M3S ONSEMI NTBG030N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
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FGH75T65SHDTL4 ONSEMI fgh75t65shdtl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Case: TO247-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 227W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 126nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
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FGH75T65SQDNL4 ONSEMI fgh75t65sqdnl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Case: TO247-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 188W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 152nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
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NC7SZ373P6X NC7SZ373P6X ONSEMI ONSM-S-A0003585304-1.pdf?t.download=true&u=5oefqw Category: Latches
Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: 7SZ
Trigger: level-triggered
на замовлення 2722 шт:
термін постачання 21-30 дні (днів)
20+22.12 грн
27+14.85 грн
33+12.24 грн
43+9.32 грн
100+6.32 грн
163+5.69 грн
250+5.21 грн
Мінімальне замовлення: 20
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MMSD3070 ONSEMI mmsd3070-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD123; reel,tape
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: SMD
Case: SOD123
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FDN338P FDN338P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF8C4E96E0DE28&compId=FDN338P.pdf?ci_sign=bb457ed12eae984270616f2c470fdc17c0c2a9cf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 5803 шт:
термін постачання 21-30 дні (днів)
12+36.58 грн
17+23.85 грн
50+18.01 грн
79+11.77 грн
218+11.06 грн
3000+10.50 грн
Мінімальне замовлення: 12
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NTMJS0D7N03CGTWG ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 410A
On-state resistance: 0.65mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Kind of package: reel; tape
Gate charge: 147nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 900A
Mounting: SMD
Case: LFPAK8
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NTB6410ANT4G ONSEMI NTB6410AN-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; D2PAK
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Kind of package: reel; tape
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 305A
Mounting: SMD
Case: D2PAK
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NTP6410ANG ONSEMI ntb6410an-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 305A
Mounting: THT
Case: TO220-3
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NCP51145MNTAG NCP51145MNTAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CEE6C66BE280C7&compId=NCP51145.pdf?ci_sign=2bf54601ef8295f1ee1cb715c15bd9b934fbec7a Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷2.5VDC
Operating temperature: max. 150°C
Output voltage: 0.6...2.5V DC
Output current: 1.8A
Type of integrated circuit: PMIC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Case: DFN8
Operating voltage: 1...5.5/4.75...5.5V DC
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NCP51510MNTAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0A3A83F0A80C7&compId=NCP51510.pdf?ci_sign=bd78d6aacab82590dc2c199903058cc847566d40 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Operating temperature: -40...125°C
Output voltage: 0.5...1.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Case: DFN10
Operating voltage: 1.1...3.6/2.7...3.6V DC
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NCV51510MNTAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0A3A83F0A80C7&compId=NCP51510.pdf?ci_sign=bd78d6aacab82590dc2c199903058cc847566d40 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Operating temperature: -40...125°C
Output voltage: 0.5...1.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Case: DFN10
Operating voltage: 1.1...3.6/2.7...3.6V DC
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NTLJF4156NTAG ONSEMI ntljf4156n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 4.6A; Idm: 20A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET + Schottky
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Case: WDFN6
Drain-source voltage: 30V
Drain current: 4.6A
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NTLJS4114NTAG ONSEMI ntljs4114n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 28A; 1.92W; WDFN6
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.92W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.5nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 28A
Mounting: SMD
Case: WDFN6
Drain-source voltage: 30V
Drain current: 7.8A
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NTLUD4C26NTAG ONSEMI Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.3A; 1.7W; uDFN6
On-state resistance: 21mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: uDFN6
Drain-source voltage: 30V
Drain current: 5.3A
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NC7WZ04P6X NC7WZ04P6X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE5C75D3680745&compId=NC7WZ04.pdf?ci_sign=a8b9312ba4172166f3f85291b08110c18da9d35f Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SC70-6
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
Number of channels: dual; 2
Quiescent current: 10µA
Kind of package: reel; tape
Kind of gate: NOT
Mounting: SMD
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NC7WZ04P6X-L22347 ONSEMI nc7wz04-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 5854 шт:
термін постачання 21-30 дні (днів)
3000+6.12 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BD239C BD239C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD93DB4214ABDF80D3&compId=BD239x.pdf?ci_sign=2b255cd84aa1d429c5df5a3b374a6dc10198953e Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: bulk
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1SMA5918BT3G 1SMA5918BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 2629 шт:
термін постачання 21-30 дні (днів)
17+26.37 грн
22+18.32 грн
50+13.90 грн
125+7.42 грн
344+6.95 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
SZ1SMA5918BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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NTBG020N120SC1 ONSEMI ntbg020n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...20V
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MUR1610CTG MUR1610CTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E77CFBC197C469&compId=MUR1610CTG.PDF?ci_sign=a2fe15ddc41e172553a987727bbb91cf41ebe10b Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8Ax2; tube; Ifsm: 100A; TO220AB
Mounting: THT
Case: TO220AB
Max. off-state voltage: 100V
Max. load current: 16A
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Kind of package: tube
Type of diode: rectifying
Heatsink thickness: 1.15...1.39mm
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SURS8260T3G-VF01 ONSEMI MURS260T3-D.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
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MOC8050M MOC8050M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE21F0609FE745&compId=MOC8050M.pdf?ci_sign=641609158cfd4e09bef9cc3f8e8b625019582a72 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 4.17kV; CTR@If: 500%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Case: DIP6
Turn-off time: 95µs
CTR@If: 500%@10mA
Turn-on time: 8.5µs
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RFD16N05SM9A RFD16N05SM9A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEF75F1BB8E745&compId=RFD16N05SM.pdf?ci_sign=11584988654cc6f71ae7865d85d2e4358f7455d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Mounting: SMD
Drain-source voltage: 50V
Drain current: 16A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 72W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: DPAK
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NTLJS2103PTBG ONSEMI ntljs2103p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -24A
Mounting: SMD
Case: WDFN6
Drain-source voltage: -12V
Drain current: -7.7A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
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NFVA25012NP2T ONSEMI nfva25012np2t-d.pdf Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
24+7260.56 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
MMBZ5252BLT1G MMBZ5252BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Tolerance: ±5%
Leakage current: 0.1µA
Power dissipation: 0.3W
Manufacturer series: MMBZ52xxBLT1G
Zener voltage: 24V
на замовлення 5419 шт:
термін постачання 21-30 дні (днів)
46+9.36 грн
65+6.16 грн
129+3.06 грн
500+1.99 грн
774+1.19 грн
2128+1.13 грн
Мінімальне замовлення: 46
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SM24T1G SM24T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5 Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Max. forward impulse current: 5A
на замовлення 2704 шт:
термін постачання 21-30 дні (днів)
25+17.01 грн
38+10.43 грн
100+6.00 грн
182+5.13 грн
499+4.82 грн
1000+4.74 грн
Мінімальне замовлення: 25
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NTLUS020N03CTAG ntlus020n03c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Pulsed drain current: 24A
Power dissipation: 1.52W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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DFB20100 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2D936488840DC&compId=DFB20xx.pdf?ci_sign=acc8c342310d07484802840a4e397ecb76a692aa
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Max. forward impulse current: 250A
Leads: flat pin
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Type of bridge rectifier: single-phase
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MC100LVEP11DR2G mc10lvep11-d.pdf
MC100LVEP11DR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,differential; Ch: 1; 2.375÷3.8VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; fanout buffer
Supply voltage: 2.375...3.8V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
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NB3L553MNR4G 0900766b8125d51f.pdf
NB3L553MNR4G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Supply voltage: 2.375...5.25V DC
Mounting: SMD
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
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NB3N551DR2G nb3n551-d.pdf
NB3N551DR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS; 3÷5.5VDC; SMD; SO8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Supply voltage: 3...5.5V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Technology: CMOS
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NB3RL02FCT2G nb3rl02-d.pdf
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 2; 2.3÷5.5VDC; SMD; WLCSP8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: WLCSP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 2
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NB6L11SMNG nb6l11s-d.pdf
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 2; CMOS,LVDS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Supply voltage: 3.8V DC
Mounting: SMD
Case: QFN16
Operating temperature: -40...85°C
Kind of package: tube
Number of channels: 2
Technology: CMOS; LVDS; TTL
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NB6N11SMNR2G nb6n11s-d.pdf
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 1; CMOS,TTL; 3.8VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Supply voltage: 3.8V DC
Mounting: SMD
Case: QFN16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Technology: CMOS; TTL
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NB6N14SMNR2G nb6n14s-d.pdf
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer,translator; Ch: 1; 3÷3.6VDC; SMD; QFN16
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer; translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: QFN16
Operating temperature: -40...85°C
Number of channels: 1
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MUN5211DW1T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1455BDF25C0CE&compId=MUN5211DW1.PDF?ci_sign=3cf432a5e8d799c49791300d0639c0541b0793dd
MUN5211DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 60
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SMUN5211DW1T1G dtc114ed-d.pdf
SMUN5211DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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NTD20N06T4G ntd20n06-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTDV20N06T4G-VF01
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDPF320N06L fdpf320n06l-d.pdf
FDPF320N06L
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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MC74AC125DR2G mc74ac125-d.pdf
MC74AC125DR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
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SS23FA ss29fa-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
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6N137M pVersion=0046&contRep=ZT&docId=005056AB752F1ED39EBACC9E606C29E4&compId=6N137.pdf?ci_sign=3f2adbed7e697dc552a45162076791d11ab83709
6N137M
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
Slew rate: 2.5kV/μs
CTR@If: 19-50%@16mA
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SZESD7351HT1G esd7351-d.pdf
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD323; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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SZ1SMB5927BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FDA16N50-F109 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD923142AC3A0C7&compId=FDA16N50_F109.PDF?ci_sign=c603ddf6113d634b6762760ffa586cc84b7053d3
FDA16N50-F109
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
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FDA16N50LDTU FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw fda16n50ldtu-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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1N5239BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Kind of package: reel; tape
Manufacturer series: 1N52xxB
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FDG1024NZ pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECEAA033AFB1E28&compId=FDG1024NZ.pdf?ci_sign=2dd81f2da8a73f94804271db1a5248d982297911
FDG1024NZ
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Case: SC70-6; SC88; SOT363
Drain-source voltage: 20V
Drain current: 1.2A
On-state resistance: 389mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.6nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
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FST3125DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278DD72EE0D3&compId=74FST3125.pdf?ci_sign=40b3fc8bc7d6f9f64987e32314b427484f5ec79f
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 4
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FST3125MTCX 74fst3125.pdf
FST3125MTCX
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; CMOS,TTL; SMD; TSSOP14; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 3µA
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NCP110AMX085TBG ncp110-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.85V; 200mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.85V
Output current: 0.2A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP110
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.1...5.5V
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NCP130BMX080TCG ncp130-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 0.15V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0.8...5.5V
Output current: 0.3A
Output voltage: 0.8V
Manufacturer series: NCP130
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Case: XDFN6
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NCP114AMX080TCG ncp114-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; uDFN4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.5V
Output current: 0.3A
Output voltage: 0.8V
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Case: uDFN4
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NCP130AMX080TCG ncp130-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 0.15V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0.8...5.5V
Output current: 0.3A
Output voltage: 0.8V
Manufacturer series: NCP130
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Case: XDFN6
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NCP110AMX080TBG ncp110-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+9.95 грн
Мінімальне замовлення: 5000
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MUN5135DW1T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EA7491EEBC6749&compId=MUN5135DW1.PDF?ci_sign=2947b13475a6c547a8a5f225ab134ad9506666c4
MUN5135DW1T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Collector-emitter voltage: 50V
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NTBG030N120M3S NTBG030N120M3S-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
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FGH75T65SHDTL4 fgh75t65shdtl4-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Case: TO247-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 227W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 126nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
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FGH75T65SQDNL4 fgh75t65sqdnl4-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Case: TO247-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 188W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 152nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
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NC7SZ373P6X ONSM-S-A0003585304-1.pdf?t.download=true&u=5oefqw
NC7SZ373P6X
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: 7SZ
Trigger: level-triggered
на замовлення 2722 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.12 грн
27+14.85 грн
33+12.24 грн
43+9.32 грн
100+6.32 грн
163+5.69 грн
250+5.21 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MMSD3070 mmsd3070-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD123; reel,tape
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: SMD
Case: SOD123
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FDN338P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF8C4E96E0DE28&compId=FDN338P.pdf?ci_sign=bb457ed12eae984270616f2c470fdc17c0c2a9cf
FDN338P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 5803 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.58 грн
17+23.85 грн
50+18.01 грн
79+11.77 грн
218+11.06 грн
3000+10.50 грн
Мінімальне замовлення: 12
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NTMJS0D7N03CGTWG
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 410A
On-state resistance: 0.65mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Kind of package: reel; tape
Gate charge: 147nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 900A
Mounting: SMD
Case: LFPAK8
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NTB6410ANT4G NTB6410AN-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; D2PAK
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Kind of package: reel; tape
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 305A
Mounting: SMD
Case: D2PAK
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NTP6410ANG ntb6410an-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 305A
Mounting: THT
Case: TO220-3
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NCP51145MNTAG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CEE6C66BE280C7&compId=NCP51145.pdf?ci_sign=2bf54601ef8295f1ee1cb715c15bd9b934fbec7a
NCP51145MNTAG
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷2.5VDC
Operating temperature: max. 150°C
Output voltage: 0.6...2.5V DC
Output current: 1.8A
Type of integrated circuit: PMIC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Case: DFN8
Operating voltage: 1...5.5/4.75...5.5V DC
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NCP51510MNTAG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0A3A83F0A80C7&compId=NCP51510.pdf?ci_sign=bd78d6aacab82590dc2c199903058cc847566d40
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Operating temperature: -40...125°C
Output voltage: 0.5...1.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Case: DFN10
Operating voltage: 1.1...3.6/2.7...3.6V DC
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NCV51510MNTAG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0A3A83F0A80C7&compId=NCP51510.pdf?ci_sign=bd78d6aacab82590dc2c199903058cc847566d40
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Operating temperature: -40...125°C
Output voltage: 0.5...1.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Case: DFN10
Operating voltage: 1.1...3.6/2.7...3.6V DC
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NTLJF4156NTAG ntljf4156n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 4.6A; Idm: 20A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET + Schottky
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Case: WDFN6
Drain-source voltage: 30V
Drain current: 4.6A
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NTLJS4114NTAG ntljs4114n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 28A; 1.92W; WDFN6
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.92W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.5nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 28A
Mounting: SMD
Case: WDFN6
Drain-source voltage: 30V
Drain current: 7.8A
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NTLUD4C26NTAG
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.3A; 1.7W; uDFN6
On-state resistance: 21mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: uDFN6
Drain-source voltage: 30V
Drain current: 5.3A
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NC7WZ04P6X pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE5C75D3680745&compId=NC7WZ04.pdf?ci_sign=a8b9312ba4172166f3f85291b08110c18da9d35f
NC7WZ04P6X
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SC70-6
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
Number of channels: dual; 2
Quiescent current: 10µA
Kind of package: reel; tape
Kind of gate: NOT
Mounting: SMD
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NC7WZ04P6X-L22347 nc7wz04-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 5854 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+6.12 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BD239C pVersion=0046&contRep=ZT&docId=005056AB281E1EDD93DB4214ABDF80D3&compId=BD239x.pdf?ci_sign=2b255cd84aa1d429c5df5a3b374a6dc10198953e
BD239C
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: bulk
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1SMA5918BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5918BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 2629 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.37 грн
22+18.32 грн
50+13.90 грн
125+7.42 грн
344+6.95 грн
Мінімальне замовлення: 17
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SZ1SMA5918BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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NTBG020N120SC1 ntbg020n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...20V
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MUR1610CTG pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E77CFBC197C469&compId=MUR1610CTG.PDF?ci_sign=a2fe15ddc41e172553a987727bbb91cf41ebe10b
MUR1610CTG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8Ax2; tube; Ifsm: 100A; TO220AB
Mounting: THT
Case: TO220AB
Max. off-state voltage: 100V
Max. load current: 16A
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Kind of package: tube
Type of diode: rectifying
Heatsink thickness: 1.15...1.39mm
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SURS8260T3G-VF01 MURS260T3-D.PDF
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
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MOC8050M pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE21F0609FE745&compId=MOC8050M.pdf?ci_sign=641609158cfd4e09bef9cc3f8e8b625019582a72
MOC8050M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 4.17kV; CTR@If: 500%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Case: DIP6
Turn-off time: 95µs
CTR@If: 500%@10mA
Turn-on time: 8.5µs
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RFD16N05SM9A pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEF75F1BB8E745&compId=RFD16N05SM.pdf?ci_sign=11584988654cc6f71ae7865d85d2e4358f7455d0
RFD16N05SM9A
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Mounting: SMD
Drain-source voltage: 50V
Drain current: 16A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 72W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: DPAK
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NTLJS2103PTBG ntljs2103p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -24A
Mounting: SMD
Case: WDFN6
Drain-source voltage: -12V
Drain current: -7.7A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
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NFVA25012NP2T nfva25012np2t-d.pdf
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+7260.56 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
MMBZ5252BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5252BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Tolerance: ±5%
Leakage current: 0.1µA
Power dissipation: 0.3W
Manufacturer series: MMBZ52xxBLT1G
Zener voltage: 24V
на замовлення 5419 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.36 грн
65+6.16 грн
129+3.06 грн
500+1.99 грн
774+1.19 грн
2128+1.13 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
SM24T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5
SM24T1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Max. forward impulse current: 5A
на замовлення 2704 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.01 грн
38+10.43 грн
100+6.00 грн
182+5.13 грн
499+4.82 грн
1000+4.74 грн
Мінімальне замовлення: 25
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