| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MMBF5485 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 4mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MMBF4416A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -35V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MMBF5486 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 8mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MMBF5484 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 1mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MMBF4393LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA On-state resistance: 100Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FDS6682 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8 Case: SO8 Drain-source voltage: 30V Drain current: 14A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 31nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCH3914-7-TL-H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA Case: MCPH3 Gate current: 5mA Drain-source voltage: 15V Drain current: 16mA Type of transistor: N-JFET Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel; tape Gate-source voltage: -15V Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCH3914-8-TL-H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA Case: MCPH3 Gate current: 5mA Drain-source voltage: 15V Drain current: 25mA Type of transistor: N-JFET Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel; tape Gate-source voltage: -15V Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FAN3122CMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| FAN3181TMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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MMUN2141LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 100kΩ Current gain: 160...350 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMMUN2116LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMMUN2134LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IRFM120ATF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223 Mounting: SMD Drain-source voltage: 100V Drain current: 2.3A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 18A Case: SOT223 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NTB110N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 62nC Pulsed drain current: 69A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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FZT790A | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 2W Case: SOT223-4; TO261-4 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Current gain: 300...800 |
на замовлення 3250 шт: термін постачання 21-30 дні (днів) |
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| SPZT3904T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Mounting: SMD Kind of package: tape Frequency: 300MHz Current gain: 100...300 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SZ1SMB5928BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 13V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MC74AC374DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP20; reel,tape; 80uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Quiescent current: 80µA Trigger: positive-edge-triggered |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MC74AC374DWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC Kind of output: 3-state Manufacturer series: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MC74AC374DWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Kind of output: 3-state Manufacturer series: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MC100LVEL33DG | ONSEMI |
Category: Integrated circuits - Unclassified Description: MC100LVEL33DG |
на замовлення 196 шт: термін постачання 21-30 дні (днів) |
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| FPF2004 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.1A; Ch: 1; P-Channel; SMD; SC70-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SC70-5 On-state resistance: 0.7Ω Kind of package: reel; tape Supply voltage: 1.8...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MC33275ST-3.3T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Manufacturer series: MC33275 Operating temperature: -40...125°C Case: SOT223 Tolerance: ±1% Output voltage: 3.3V Output current: 0.8A Voltage drop: 1.1V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 0...20V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD |
на замовлення 3696 шт: термін постачання 21-30 дні (днів) |
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NCP81074ADR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -10...10A Number of channels: 1 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 7ns Pulse fall time: 7ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| NCP81074AMNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -10...10A Number of channels: 1 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 7ns Pulse fall time: 7ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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NCP81074BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -10...10A Number of channels: 1 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 7ns Pulse fall time: 7ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| NCP81074BMNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -10...10A Number of channels: 1 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 7ns Pulse fall time: 7ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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NCP115ASN180T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD Output voltage: 1.8V Operating temperature: -40...85°C Output current: 0.3A Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.7...5.5V Kind of package: reel; tape Manufacturer series: NCP115 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: TSOP5 Tolerance: ±2% |
на замовлення 326 шт: термін постачання 21-30 дні (днів) |
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| 74LVTH162244MTD | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; tube Mounting: SMD Kind of package: tube Case: TSSOP48 Type of integrated circuit: digital Number of channels: 16 Kind of output: 3-state Kind of integrated circuit: buffer; line driver; non-inverting Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NTB150N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK Type of transistor: N-MOSFET Power dissipation: 192W Case: D2PAK Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 60A Drain-source voltage: 650V Drain current: 24A On-state resistance: 0.15Ω Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NTD250N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK Type of transistor: N-MOSFET Power dissipation: 106W Case: DPAK Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 36A Drain-source voltage: 650V Drain current: 13A On-state resistance: 0.25Ω Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FCMT250N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; PQFN4 Type of transistor: N-MOSFET Power dissipation: 90W Case: PQFN4 Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 30A Drain-source voltage: 650V Drain current: 12A On-state resistance: 0.25Ω Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NTBL050N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 49A; Idm: 132A; 305W; H-PSOF8L Type of transistor: N-MOSFET Power dissipation: 305W Case: H-PSOF8L Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 132A Drain-source voltage: 650V Drain current: 49A On-state resistance: 50mΩ Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FDMB3900AN | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 7A; Idm: 28A; 1.6W; MicroFET Mounting: SMD Drain-source voltage: 25V Drain current: 7A On-state resistance: 33mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 28A Case: MicroFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NCP347MTAETBG | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; 1.2÷28VDC; WDFN10 Type of integrated circuit: supervisor circuit Supply voltage: 1.2...28V DC Case: WDFN10 Operating temperature: -40...85°C Threshold on-voltage: 2.95V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NCP347MTAFTBG | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; 1.2÷28VDC; WDFN10 Type of integrated circuit: supervisor circuit Supply voltage: 1.2...28V DC Case: WDFN10 Operating temperature: -40...85°C Threshold on-voltage: 2.95V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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NVHL020N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 83A Pulsed drain current: 472A Power dissipation: 251W Case: TO247-3 Gate-source voltage: -10...19V On-state resistance: 28mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| MMBF5485 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
товару немає в наявності
В кошику
од. на суму грн.
| MMBF4416A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
товару немає в наявності
В кошику
од. на суму грн.
| MMBF5486 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
товару немає в наявності
В кошику
од. на суму грн.
| MMBF5484 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
товару немає в наявності
В кошику
од. на суму грн.
| MMBF4393LT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 100Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 100Ω
товару немає в наявності
В кошику
од. на суму грн.
| FDS6682 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
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| MCH3914-7-TL-H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA
Case: MCPH3
Gate current: 5mA
Drain-source voltage: 15V
Drain current: 16mA
Type of transistor: N-JFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -15V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA
Case: MCPH3
Gate current: 5mA
Drain-source voltage: 15V
Drain current: 16mA
Type of transistor: N-JFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -15V
Mounting: SMD
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| MCH3914-8-TL-H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA
Case: MCPH3
Gate current: 5mA
Drain-source voltage: 15V
Drain current: 25mA
Type of transistor: N-JFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -15V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA
Case: MCPH3
Gate current: 5mA
Drain-source voltage: 15V
Drain current: 25mA
Type of transistor: N-JFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -15V
Mounting: SMD
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| FAN3122CMX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 107.29 грн |
| FAN3181TMX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 65.20 грн |
| MMUN2141LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Current gain: 160...350
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Current gain: 160...350
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| SMMUN2116LT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
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| SMMUN2134LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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| IRFM120ATF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223
Mounting: SMD
Drain-source voltage: 100V
Drain current: 2.3A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 18A
Case: SOT223
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223
Mounting: SMD
Drain-source voltage: 100V
Drain current: 2.3A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 18A
Case: SOT223
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| NTB110N65S3HF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 62nC
Pulsed drain current: 69A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 62nC
Pulsed drain current: 69A
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| FZT790A |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 300...800
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 300...800
на замовлення 3250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 52.82 грн |
| 10+ | 40.39 грн |
| 36+ | 25.37 грн |
| 98+ | 23.99 грн |
| 1000+ | 23.07 грн |
| SPZT3904T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Mounting: SMD
Kind of package: tape
Frequency: 300MHz
Current gain: 100...300
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Mounting: SMD
Kind of package: tape
Frequency: 300MHz
Current gain: 100...300
Application: automotive industry
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| SZ1SMB5928BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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| MC74AC374DTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP20; reel,tape; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 80µA
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP20; reel,tape; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 80µA
Trigger: positive-edge-triggered
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| MC74AC374DWG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Kind of output: 3-state
Manufacturer series: AC
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Kind of output: 3-state
Manufacturer series: AC
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| MC74AC374DWR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Kind of output: 3-state
Manufacturer series: AC
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Kind of output: 3-state
Manufacturer series: AC
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| MC100LVEL33DG |
|
на замовлення 196 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 98+ | 344.14 грн |
| FPF2004 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.1A; Ch: 1; P-Channel; SMD; SC70-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC70-5
On-state resistance: 0.7Ω
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.1A; Ch: 1; P-Channel; SMD; SC70-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC70-5
On-state resistance: 0.7Ω
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
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| MC33275ST-3.3T3G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Manufacturer series: MC33275
Operating temperature: -40...125°C
Case: SOT223
Tolerance: ±1%
Output voltage: 3.3V
Output current: 0.8A
Voltage drop: 1.1V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0...20V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Manufacturer series: MC33275
Operating temperature: -40...125°C
Case: SOT223
Tolerance: ±1%
Output voltage: 3.3V
Output current: 0.8A
Voltage drop: 1.1V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0...20V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
на замовлення 3696 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.60 грн |
| 11+ | 36.17 грн |
| 25+ | 30.81 грн |
| 46+ | 19.62 грн |
| 127+ | 18.55 грн |
| 1000+ | 17.86 грн |
| NCP81074ADR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
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| NCP81074AMNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
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| NCP81074BDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
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| NCP81074BMNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
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| NCP115ASN180T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Output voltage: 1.8V
Operating temperature: -40...85°C
Output current: 0.3A
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.5V
Kind of package: reel; tape
Manufacturer series: NCP115
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Output voltage: 1.8V
Operating temperature: -40...85°C
Output current: 0.3A
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.5V
Kind of package: reel; tape
Manufacturer series: NCP115
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Tolerance: ±2%
на замовлення 326 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 24.76 грн |
| 24+ | 16.40 грн |
| 35+ | 11.19 грн |
| 100+ | 4.48 грн |
| 235+ | 3.85 грн |
| 74LVTH162244MTD |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; tube
Mounting: SMD
Kind of package: tube
Case: TSSOP48
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; tube
Mounting: SMD
Kind of package: tube
Case: TSSOP48
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
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| NTB150N65S3HF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: D2PAK
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 0.15Ω
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: D2PAK
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 0.15Ω
Polarisation: unipolar
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| NTD250N65S3H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 106W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 0.25Ω
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 106W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 0.25Ω
Polarisation: unipolar
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| FCMT250N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; PQFN4
Type of transistor: N-MOSFET
Power dissipation: 90W
Case: PQFN4
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 30A
Drain-source voltage: 650V
Drain current: 12A
On-state resistance: 0.25Ω
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; PQFN4
Type of transistor: N-MOSFET
Power dissipation: 90W
Case: PQFN4
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 30A
Drain-source voltage: 650V
Drain current: 12A
On-state resistance: 0.25Ω
Polarisation: unipolar
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| NTBL050N65S3H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49A; Idm: 132A; 305W; H-PSOF8L
Type of transistor: N-MOSFET
Power dissipation: 305W
Case: H-PSOF8L
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 132A
Drain-source voltage: 650V
Drain current: 49A
On-state resistance: 50mΩ
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49A; Idm: 132A; 305W; H-PSOF8L
Type of transistor: N-MOSFET
Power dissipation: 305W
Case: H-PSOF8L
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 132A
Drain-source voltage: 650V
Drain current: 49A
On-state resistance: 50mΩ
Polarisation: unipolar
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| FDMB3900AN |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 7A; Idm: 28A; 1.6W; MicroFET
Mounting: SMD
Drain-source voltage: 25V
Drain current: 7A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 28A
Case: MicroFET
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 7A; Idm: 28A; 1.6W; MicroFET
Mounting: SMD
Drain-source voltage: 25V
Drain current: 7A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 28A
Case: MicroFET
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| NCP347MTAETBG |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; 1.2÷28VDC; WDFN10
Type of integrated circuit: supervisor circuit
Supply voltage: 1.2...28V DC
Case: WDFN10
Operating temperature: -40...85°C
Threshold on-voltage: 2.95V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; 1.2÷28VDC; WDFN10
Type of integrated circuit: supervisor circuit
Supply voltage: 1.2...28V DC
Case: WDFN10
Operating temperature: -40...85°C
Threshold on-voltage: 2.95V
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| NCP347MTAFTBG |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; 1.2÷28VDC; WDFN10
Type of integrated circuit: supervisor circuit
Supply voltage: 1.2...28V DC
Case: WDFN10
Operating temperature: -40...85°C
Threshold on-voltage: 2.95V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; 1.2÷28VDC; WDFN10
Type of integrated circuit: supervisor circuit
Supply voltage: 1.2...28V DC
Case: WDFN10
Operating temperature: -40...85°C
Threshold on-voltage: 2.95V
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| NVHL020N090SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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