| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MPSW92 | onsemi |
 Description: TRANS PNP 300V 0.5A TO92Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Current - Collector Cutoff (Max): 250nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP |
товару немає в наявності |
В кошику од. на суму грн. |
 |
2N6517 | onsemi |
 Description: TRANS NPN 350V 0.5A TO92Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
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2N5458 | onsemi |
Description: JFET N-CH 25V TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: 135°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Power - Max: 310 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
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2N5461 | onsemi |
Description: JFET P-CH 40V TO92 Supplier Device Package: TO-92 (TO-226) Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V FET Type: P-Channel Operating Temperature: -65°C ~ 135°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NTGS3446T1 | onsemi |
Description: MOSFET N-CH 20V 2.5A 6TSOP Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NTF3055-100T1 | onsemi |
Description: MOSFET N-CH 60V 3A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 (TO-261) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
2N4921 | onsemi |
Description: TRANS NPN 40V 1A TO126 Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk Power - Max: 30 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-126 Frequency - Transition: 3MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V Current - Collector Cutoff (Max): 500µA |
товару немає в наявності |
В кошику од. на суму грн. |
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2N6038 | onsemi |
Description: TRANS NPN DARL 60V 4A TO-126 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
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2N5655 | onsemi |
Description: TRANS NPN 250V 0.5A TO-126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV Frequency - Transition: 10MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 20 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MMJT9435T1 | onsemi |
Description: TRANS PNP 30V 3A SOT223 Power - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 3 A Part Status: Obsolete Supplier Device Package: SOT-223 (TO-261) Frequency - Transition: 110MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
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2N6034 | onsemi |
Description: TRANS PNP DARL 40V 4A TO126 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 4 A Part Status: Obsolete Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NTD12N10T4 | onsemi |
Description: MOSFET N-CH 100V 12A DPAK |
товару немає в наявності |
В кошику од. на суму грн. |
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2N6109 | onsemi |
Description: TRANS PNP 50V 7A TO-220 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 7 A Part Status: Obsolete Supplier Device Package: TO-220 Frequency - Transition: 10MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
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MMDF2C03HDR2 | onsemi |
Description: MOSFET N/P-CH 30V 4.1A/3A 8SOIC Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. |
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MMDF2P02HDR2 | onsemi |
Description: MOSFET 2P-CH 20V 3.3A 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. |
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2N6667 | onsemi |
Description: TRANS PNP DARL 60V 10A TO-220 Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 10 A Part Status: Obsolete Supplier Device Package: TO-220 DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MMPQ2222AR1 | onsemi |
Description: TRANS 4NPN QUAD 40V 500MA 16SOIC Part Status: Obsolete Supplier Device Package: 16-SOIC Frequency - Transition: 350MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 500mA Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 4 NPN (Quad) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NTD80N02-001 | onsemi |
Description: MOSFET N-CH 24V 80A IPAK Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Drain to Source Voltage (Vdss): 24 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
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NTD80N02T4 | onsemi |
Description: MOSFET N-CH 24V 80A DPAK Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Drain to Source Voltage (Vdss): 24 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. |
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NTP75N06 | onsemi |
Description: MOSFET N-CH 60V 75A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MMBT2222ALT1 | onsemi |
Description: TRANS NPN 40V 0.6A SOT23-3 Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 600 mA Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
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MMBT2369ALT1 | onsemi |
Description: TRANS SS GP NPN 15V SOT23 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
2N3904RLRA | onsemi |
Description: TRANS NPN 40V 0.2A TO92 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 200 mA Part Status: Obsolete Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100µA, 1V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
|
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2N3906RLRA | onsemi |
Description: TRANS PNP 40V 0.2A TO92 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 200 mA Part Status: Obsolete Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
2N4401RLRA | onsemi |
Description: TRANS NPN 40V 0.6A TO92 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MMBT4126LT1 | onsemi |
Description: TRANS SS GP PNP 25V SOT23 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MMBT2222AWT1 | onsemi |
Description: TRANS NPN 40V 0.6A SC70-3 Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 600 mA Part Status: Obsolete Supplier Device Package: SC-70-3 (SOT323) Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MMBT2907AWT1 | onsemi |
Description: TRANS SS GP PNP 60V SOT323 Packaging: Cut Tape (CT) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
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MMBT5087LT1 | onsemi |
Description: TRANS PNP 50V 50MA SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
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MMBT5088LT1 | onsemi |
Description: TRANS NPN 30V 50MA SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
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MMBT5089LT1 | onsemi |
Description: TRANS NPN 25V 50MA SOT23 Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 50 mA Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MPS2222ARLRA | onsemi |
Description: TRANS NPN SS GP 40V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
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MPSA06RLRA | onsemi |
Description: TRANS NPN SS GP 80V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
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PN2222ARLRA | onsemi |
Description: TRANS SS GP NPN 600MA 40V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
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MPS2907ARLRA | onsemi |
Description: TRANS PNP SS GP 60V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
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MMBTA05LT1 | onsemi |
Description: TRANS DRIVER SS NPN 60V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MPSA56RLRA | onsemi |
Description: TRANS PNP SS GP 80V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
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MMBT5550LT1 | onsemi |
Description: TRANS SS NPN 140V HV SOT23 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
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MMBTA13LT1 | onsemi |
Description: TRANS SS DARL NPN 30V SOT23 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
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MMBTA14LT1 | onsemi |
Description: TRANS NPN DARL 30V 0.3A SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 300 mA Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. |
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MMBTA55LT1 | onsemi |
Description: TRANS DRIVER SS PNP 60V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
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MMBTA63LT1 | onsemi |
Description: TRANS SS DARL PNP 30V SOT23 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
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MPS4124RLRA | onsemi |
Description: TRANS NPN SS GP 25V TO92 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
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MPSA55RLRA | onsemi |
Description: TRANS PNP SS GP 60V TO92 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
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2N7002LT1 | onsemi |
Description: MOSFET N-CH 60V 115MA SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
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MPSA27RLRA | onsemi |
Description: TRANS NPN DARL SS 60V TO92 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MPSA29RLRP | onsemi |
Description: TRANS NPN DARL SS 100V TO92 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
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MPSA42RLRA | onsemi |
Description: TRANS NPN SS GP 500MA 300V TO92 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
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MPSA92RLRA | onsemi |
Description: TRANS PNP SS GP HV 300V TO92 Part Status: Obsolete Packaging: Cut Tape (CT) |
товару немає в наявності |
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 |
MBT3946DW1T1 | onsemi |
Description: TRANS DUAL GP 200MA 40V SOT363 Part Status: Obsolete Packaging: Cut Tape (CT) |
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MPSH10RLRA | onsemi |
Description: TRANS NPN VHF/UHF SS 25V TO92 Part Status: Obsolete Packaging: Cut Tape (CT) |
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MMBT6427LT1 | onsemi |
Description: TRANS SS DARL NPN 40V SOT23 Packaging: Cut Tape (CT) |
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MMBT6428LT1 | onsemi |
Description: TRANS SS NPN 50V LN SOT23 Packaging: Cut Tape (CT) |
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MMBF170LT1 | onsemi |
Description: MOSFET N-CH 60V 500MA SOT23-3 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) |
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MPS8098RLRA | onsemi |
Description: TRANS NPN 60V 0.5A TO92 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Packaging: Cut Tape (CT) |
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MPS8099RLRA | onsemi |
Description: TRANS NPN SS GP 80V TO92 Part Status: Obsolete Packaging: Cut Tape (CT) |
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 |
MPS8598RLRA | onsemi |
Description: TRANS PNP 60V 0.5A TO92 |
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MPS8599RLRA | onsemi |
Description: TRANS PNP SS GP 80V TO92 Part Status: Obsolete Packaging: Cut Tape (CT) |
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MPS751RLRA | onsemi |
Description: TRANS PNP SS 60V HI CURRENT TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
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MMBT918LT1 | onsemi |
Description: TRANS SS VHF NPN 15V SOT23 Packaging: Cut Tape (CT) |
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В кошику од. на суму грн. |
| MPSW92 |
|
Виробник: onsemi
Description: TRANS PNP 300V 0.5A TO92
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Description: TRANS PNP 300V 0.5A TO92
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
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| 2N6517 | |
|
Виробник: onsemi
Description: TRANS NPN 350V 0.5A TO92
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Description: TRANS NPN 350V 0.5A TO92
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
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| 2N5458 |
|
Виробник: onsemi
Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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| 2N5461 |
|
Виробник: onsemi
Description: JFET P-CH 40V TO92
Supplier Device Package: TO-92 (TO-226)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Description: JFET P-CH 40V TO92
Supplier Device Package: TO-92 (TO-226)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
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| NTGS3446T1 |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 2.5A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 2.5A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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| NTF3055-100T1 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
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| 2N4921 |
|
Виробник: onsemi
Description: TRANS NPN 40V 1A TO126
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-126
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Current - Collector Cutoff (Max): 500µA
Description: TRANS NPN 40V 1A TO126
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-126
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Current - Collector Cutoff (Max): 500µA
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| 2N6038 |
|
Виробник: onsemi
Description: TRANS NPN DARL 60V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS NPN DARL 60V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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| 2N5655 |
|
Виробник: onsemi
Description: TRANS NPN 250V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
Description: TRANS NPN 250V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
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| MMJT9435T1 |
|
Виробник: onsemi
Description: TRANS PNP 30V 3A SOT223
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: TRANS PNP 30V 3A SOT223
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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| 2N6034 |
|
Виробник: onsemi
Description: TRANS PNP DARL 40V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS PNP DARL 40V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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| NTD12N10T4 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 12A DPAK
Description: MOSFET N-CH 100V 12A DPAK
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| 2N6109 |
|
Виробник: onsemi
Description: TRANS PNP 50V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS PNP 50V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| MMDF2C03HDR2 |
|
Виробник: onsemi
Description: MOSFET N/P-CH 30V 4.1A/3A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Description: MOSFET N/P-CH 30V 4.1A/3A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
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| MMDF2P02HDR2 |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 3.3A 8-SOIC
Description: MOSFET 2P-CH 20V 3.3A 8-SOIC
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| 2N6667 |
|
Виробник: onsemi
Description: TRANS PNP DARL 60V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS PNP DARL 60V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| MMPQ2222AR1 |
|
Виробник: onsemi
Description: TRANS 4NPN QUAD 40V 500MA 16SOIC
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 500mA
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 4 NPN (Quad)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: TRANS 4NPN QUAD 40V 500MA 16SOIC
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 500mA
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 4 NPN (Quad)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| NTD80N02-001 |
|
Виробник: onsemi
Description: MOSFET N-CH 24V 80A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 24V 80A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| NTD80N02T4 |
|
Виробник: onsemi
Description: MOSFET N-CH 24V 80A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 24V 80A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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| NTP75N06 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| MMBT2222ALT1 |
|
Виробник: onsemi
Description: TRANS NPN 40V 0.6A SOT23-3
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 40V 0.6A SOT23-3
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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| 2N3904RLRA |
|
Виробник: onsemi
Description: TRANS NPN 40V 0.2A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100µA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
Description: TRANS NPN 40V 0.2A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100µA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
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| 2N3906RLRA |
|
Виробник: onsemi
Description: TRANS PNP 40V 0.2A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
Description: TRANS PNP 40V 0.2A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
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| MMBT2222AWT1 |
|
Виробник: onsemi
Description: TRANS NPN 40V 0.6A SC70-3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: SC-70-3 (SOT323)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS NPN 40V 0.6A SC70-3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: SC-70-3 (SOT323)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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| MMBT2907AWT1 |
|
Виробник: onsemi
Description: TRANS SS GP PNP 60V SOT323
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS GP PNP 60V SOT323
Packaging: Cut Tape (CT)
Part Status: Obsolete
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| MMBT5089LT1 |
|
Виробник: onsemi
Description: TRANS NPN 25V 50MA SOT23
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 25V 50MA SOT23
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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| PN2222ARLRA |
|
Виробник: onsemi
Description: TRANS SS GP NPN 600MA 40V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS GP NPN 600MA 40V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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| MMBTA05LT1 |
|
Виробник: onsemi
Description: TRANS DRIVER SS NPN 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS DRIVER SS NPN 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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| MMBT5550LT1 |
|
Виробник: onsemi
Description: TRANS SS NPN 140V HV SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Description: TRANS SS NPN 140V HV SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
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| MMBTA13LT1 |
|
Виробник: onsemi
Description: TRANS SS DARL NPN 30V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Description: TRANS SS DARL NPN 30V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
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| MMBTA14LT1 |
|
Виробник: onsemi
Description: TRANS NPN DARL 30V 0.3A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Description: TRANS NPN DARL 30V 0.3A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
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| MMBTA55LT1 |
|
Виробник: onsemi
Description: TRANS DRIVER SS PNP 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS DRIVER SS PNP 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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| MMBTA63LT1 |
|
Виробник: onsemi
Description: TRANS SS DARL PNP 30V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Description: TRANS SS DARL PNP 30V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
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| 2N7002LT1 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 115MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 115MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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| MPSA27RLRA |
|
Виробник: onsemi
Description: TRANS NPN DARL SS 60V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
Description: TRANS NPN DARL SS 60V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
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| MPSA29RLRP |
|
Виробник: onsemi
Description: TRANS NPN DARL SS 100V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
Description: TRANS NPN DARL SS 100V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
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| MPSA42RLRA |
|
Виробник: onsemi
Description: TRANS NPN SS GP 500MA 300V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
Description: TRANS NPN SS GP 500MA 300V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
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| MPSA92RLRA |
|
Виробник: onsemi
Description: TRANS PNP SS GP HV 300V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
Description: TRANS PNP SS GP HV 300V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
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| MBT3946DW1T1 |
|
Виробник: onsemi
Description: TRANS DUAL GP 200MA 40V SOT363
Part Status: Obsolete
Packaging: Cut Tape (CT)
Description: TRANS DUAL GP 200MA 40V SOT363
Part Status: Obsolete
Packaging: Cut Tape (CT)
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| MPSH10RLRA |
|
Виробник: onsemi
Description: TRANS NPN VHF/UHF SS 25V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
Description: TRANS NPN VHF/UHF SS 25V TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
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| MMBF170LT1 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 500MA SOT23-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Description: MOSFET N-CH 60V 500MA SOT23-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
товару немає в наявності
В кошику
од. на суму грн.
| MPS8098RLRA |
|
Виробник: onsemi
Description: TRANS NPN 60V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Cut Tape (CT)
Description: TRANS NPN 60V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| MPS8598RLRA |
|
Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92
Description: TRANS PNP 60V 0.5A TO92
товару немає в наявності
В кошику
од. на суму грн.
| MPS751RLRA |
|
Виробник: onsemi
Description: TRANS PNP SS 60V HI CURRENT TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS PNP SS 60V HI CURRENT TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.