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MPSW92 MPSW92 onsemi mpsw92-d.pdf Description: TRANS PNP 300V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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2N6517 2N6517 onsemi 2N6515%20Rev4.pdf description Description: TRANS NPN 350V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
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2N5458 2N5458 onsemi 2n5457-d.pdf Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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2N5461 2N5461 onsemi 2N5460%20Rev5.pdf Description: JFET P-CH 40V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 135°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92 (TO-226)
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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NTGS3446T1 NTGS3446T1 onsemi ntgs3446-d.pdf Description: MOSFET N-CH 20V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
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NTF3055-100T1 NTF3055-100T1 onsemi ntf3055-100-d.pdf Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
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2N4921 2N4921 onsemi 2n4921-d.pdf Description: TRANS NPN 40V 1A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
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2N6038 2N6038 onsemi 2n6035-d.pdf Description: TRANS NPN DARL 60V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
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2N5655 2N5655 onsemi 2N5655G%2C57G.pdf Description: TRANS NPN 250V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
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MMJT9435T1 MMJT9435T1 onsemi mmjt9435-d.pdf Description: TRANS PNP 30V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3 W
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2N6034 2N6034 onsemi 2n6035-d.pdf Description: TRANS PNP DARL 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
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NTD12N10T4 NTD12N10T4 onsemi ntd12n10-d.pdf Description: MOSFET N-CH 100V 12A DPAK
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2N6109 2N6109 onsemi 2n6107-d.pdf Description: TRANS PNP 50V 7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
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MMDF2C03HDR2 MMDF2C03HDR2 onsemi mmdf2c03hd-d.pdf Description: MOSFET N/P-CH 30V 4.1A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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MMDF2P02HDR2 MMDF2P02HDR2 onsemi mmdf2p02hd-d.pdf Description: MOSFET 2P-CH 20V 3.3A 8-SOIC
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2N6667 2N6667 onsemi 2n6667-d.pdf Description: TRANS PNP DARL 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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MMPQ2222AR1 MMPQ2222AR1 onsemi mmpq2222a-d.pdf Description: TRANS 4NPN QUAD 40V 500MA 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 350MHz
Supplier Device Package: 16-SOIC
Part Status: Obsolete
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NTD80N02-001 NTD80N02-001 onsemi ntd80n02-d.pdf Description: MOSFET N-CH 24V 80A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
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NTD80N02T4 NTD80N02T4 onsemi ntd80n02-d.pdf Description: MOSFET N-CH 24V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
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NTP75N06 NTP75N06 onsemi ntp75n06-d.pdf Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
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MMBT2222ALT1 MMBT2222ALT1 onsemi mmbt2222lt1-d.pdf Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
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MMBT2222LT1 MMBT2222LT1 onsemi mmbt2222lt1-d.pdf description Description: TRANS NPN 30V 600MA SOT23
Packaging: Cut Tape (CT)
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MMBT2369ALT1 MMBT2369ALT1 onsemi mmbt2369lt1-d.pdf Description: TRANS SS GP NPN 15V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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2N3904RLRA 2N3904RLRA onsemi 2n3903-d.pdf Description: TRANS NPN 40V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100µA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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2N3906RLRA 2N3906RLRA onsemi 2n3906-d.pdf Description: TRANS PNP 40V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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2N4401RLRA 2N4401RLRA onsemi 2n4401-d.pdf Description: TRANS NPN 40V 0.6A TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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2N4403RLRA 2N4403RLRA onsemi 2n4403-d.pdf Description: TRANS PNP 40V 0.6A TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBT4126LT1 MMBT4126LT1 onsemi mmbt4126lt1-d.pdf Description: TRANS SS GP PNP 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBT2222AWT1 MMBT2222AWT1 onsemi mmbt2222awt1-d.pdf Description: TRANS NPN 40V 0.6A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
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MMBT2907AWT1 MMBT2907AWT1 onsemi mmbt2907awt1-d.pdf Description: TRANS SS GP PNP 60V SOT323
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBT3906WT1 MMBT3906WT1 onsemi mmbt3904wt1-d.pdf Description: TRANS SS GP PNP 40V SOT323
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBT5087LT1 MMBT5087LT1 onsemi mmbt5087lt1-d.pdf Description: TRANS PNP 50V 50MA SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBT5088LT1 MMBT5088LT1 onsemi mmbt5088lt1-d.pdf Description: TRANS NPN 30V 50MA SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBT5089LT1 MMBT5089LT1 onsemi mmbt5088lt1-d.pdf Description: TRANS NPN 25V 50MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 225 mW
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MPS2222ARLRA MPS2222ARLRA onsemi mps2222-d.pdf Description: TRANS NPN SS GP 40V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSA06RLRA MPSA06RLRA onsemi pzta06-d.pdf Description: TRANS NPN SS GP 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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PN2222ARLRA PN2222ARLRA onsemi DS_488_PN2222.pdf Description: TRANS SS GP NPN 600MA 40V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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PN2907ARLRA PN2907ARLRA onsemi PN2907A-D.pdf Description: TRANS PNP 60V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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MPS2907ARLRA MPS2907ARLRA onsemi mps2907a-d.pdf Description: TRANS PNP SS GP 60V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBTA05LT1 MMBTA05LT1 onsemi mmbta05lt1-d.pdf Description: TRANS DRIVER SS NPN 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSA56RLRA MPSA56RLRA onsemi pzta06-d.pdf Description: TRANS PNP SS GP 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSA13RLRA MPSA13RLRA onsemi mpsa13-d.pdf Description: TRANS NPN DARL 30V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MMBT5550LT1 MMBT5550LT1 onsemi mmbt5550lt1-d.pdf Description: TRANS SS NPN 140V HV SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBTA13LT1 MMBTA13LT1 onsemi mmbta13lt1-d.pdf Description: TRANS SS DARL NPN 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBTA14LT1 MMBTA14LT1 onsemi MMBTA13LT1-D.pdf Description: TRANS NPN DARL 30V 0.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 10mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
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MMBTA55LT1 MMBTA55LT1 onsemi MMBTA55LT1-D.pdf Description: TRANS DRIVER SS PNP 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBTA63LT1 MMBTA63LT1 onsemi MMBT%2CSMMBTA%2863%2C64%29LT1G.pdf Description: TRANS SS DARL PNP 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBTA64LT1 MMBTA64LT1 onsemi mmbta63lt1-d.pdf Description: TRANS SS DARL PNP 30V SOT23
Packaging: Cut Tape (CT)
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MPS4124RLRA MPS4124RLRA onsemi mps4124-d.pdf Description: TRANS NPN SS GP 25V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSA55RLRA MPSA55RLRA onsemi pzta06-d.pdf Description: TRANS PNP SS GP 60V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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2N7002LT1 2N7002LT1 onsemi 2n7002l-d.pdf Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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MPSA27RLRA MPSA27RLRA onsemi mpsa27-d.pdf Description: TRANS NPN DARL SS 60V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSA29RLRP MPSA29RLRP onsemi mpsa28-d.pdf Description: TRANS NPN DARL SS 100V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSA42RLRA MPSA42RLRA onsemi MPSA42-D.pdf Description: TRANS NPN SS GP 500MA 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSA92RLRA MPSA92RLRA onsemi mpsa92-d.pdf Description: TRANS PNP SS GP HV 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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2N5551RLRA 2N5551RLRA onsemi 2n5551t-d.pdf Description: TRANS NPN 160V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
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MBT3906DW1T1 MBT3906DW1T1 onsemi MBT%2CSMBT3906DW1T1.pdf Description: TRANS 2PNP 40V 0.2A SOT363
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MBT3946DW1T1 MBT3946DW1T1 onsemi mbt3946dw1t1-d.pdf Description: TRANS DUAL GP 200MA 40V SOT363
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBTH10LT1 MMBTH10LT1 onsemi NSV%2CS%2CMMBTH10L%284L%29.pdf Description: TRANS SS VHF NPN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSH10RLRA MPSH10RLRA onsemi mpsh10-d.pdf Description: TRANS NPN VHF/UHF SS 25V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSW92 mpsw92-d.pdf
MPSW92
Виробник: onsemi
Description: TRANS PNP 300V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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2N6517 description 2N6515%20Rev4.pdf
2N6517
Виробник: onsemi
Description: TRANS NPN 350V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
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2N5458 2n5457-d.pdf
2N5458
Виробник: onsemi
Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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2N5461 2N5460%20Rev5.pdf
2N5461
Виробник: onsemi
Description: JFET P-CH 40V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 135°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92 (TO-226)
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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NTGS3446T1 ntgs3446-d.pdf
NTGS3446T1
Виробник: onsemi
Description: MOSFET N-CH 20V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
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NTF3055-100T1 ntf3055-100-d.pdf
NTF3055-100T1
Виробник: onsemi
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
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2N4921 2n4921-d.pdf
2N4921
Виробник: onsemi
Description: TRANS NPN 40V 1A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
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2N6038 2n6035-d.pdf
2N6038
Виробник: onsemi
Description: TRANS NPN DARL 60V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
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2N5655 2N5655G%2C57G.pdf
2N5655
Виробник: onsemi
Description: TRANS NPN 250V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
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MMJT9435T1 mmjt9435-d.pdf
MMJT9435T1
Виробник: onsemi
Description: TRANS PNP 30V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3 W
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2N6034 2n6035-d.pdf
2N6034
Виробник: onsemi
Description: TRANS PNP DARL 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
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NTD12N10T4 ntd12n10-d.pdf
NTD12N10T4
Виробник: onsemi
Description: MOSFET N-CH 100V 12A DPAK
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2N6109 2n6107-d.pdf
2N6109
Виробник: onsemi
Description: TRANS PNP 50V 7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
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MMDF2C03HDR2 mmdf2c03hd-d.pdf
MMDF2C03HDR2
Виробник: onsemi
Description: MOSFET N/P-CH 30V 4.1A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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MMDF2P02HDR2 mmdf2p02hd-d.pdf
MMDF2P02HDR2
Виробник: onsemi
Description: MOSFET 2P-CH 20V 3.3A 8-SOIC
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2N6667 2n6667-d.pdf
2N6667
Виробник: onsemi
Description: TRANS PNP DARL 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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MMPQ2222AR1 mmpq2222a-d.pdf
MMPQ2222AR1
Виробник: onsemi
Description: TRANS 4NPN QUAD 40V 500MA 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 350MHz
Supplier Device Package: 16-SOIC
Part Status: Obsolete
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NTD80N02-001 ntd80n02-d.pdf
NTD80N02-001
Виробник: onsemi
Description: MOSFET N-CH 24V 80A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
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NTD80N02T4 ntd80n02-d.pdf
NTD80N02T4
Виробник: onsemi
Description: MOSFET N-CH 24V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
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NTP75N06 ntp75n06-d.pdf
NTP75N06
Виробник: onsemi
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
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MMBT2222ALT1 mmbt2222lt1-d.pdf
MMBT2222ALT1
Виробник: onsemi
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
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MMBT2222LT1 description mmbt2222lt1-d.pdf
MMBT2222LT1
Виробник: onsemi
Description: TRANS NPN 30V 600MA SOT23
Packaging: Cut Tape (CT)
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MMBT2369ALT1 mmbt2369lt1-d.pdf
MMBT2369ALT1
Виробник: onsemi
Description: TRANS SS GP NPN 15V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2N3904RLRA 2n3903-d.pdf
2N3904RLRA
Виробник: onsemi
Description: TRANS NPN 40V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100µA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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В кошику  од. на суму  грн.
2N3906RLRA 2n3906-d.pdf
2N3906RLRA
Виробник: onsemi
Description: TRANS PNP 40V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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В кошику  од. на суму  грн.
2N4401RLRA 2n4401-d.pdf
2N4401RLRA
Виробник: onsemi
Description: TRANS NPN 40V 0.6A TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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В кошику  од. на суму  грн.
2N4403RLRA 2n4403-d.pdf
2N4403RLRA
Виробник: onsemi
Description: TRANS PNP 40V 0.6A TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MMBT4126LT1 mmbt4126lt1-d.pdf
MMBT4126LT1
Виробник: onsemi
Description: TRANS SS GP PNP 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MMBT2222AWT1 mmbt2222awt1-d.pdf
MMBT2222AWT1
Виробник: onsemi
Description: TRANS NPN 40V 0.6A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
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MMBT2907AWT1 mmbt2907awt1-d.pdf
MMBT2907AWT1
Виробник: onsemi
Description: TRANS SS GP PNP 60V SOT323
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MMBT3906WT1 mmbt3904wt1-d.pdf
MMBT3906WT1
Виробник: onsemi
Description: TRANS SS GP PNP 40V SOT323
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MMBT5087LT1 mmbt5087lt1-d.pdf
MMBT5087LT1
Виробник: onsemi
Description: TRANS PNP 50V 50MA SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MMBT5088LT1 mmbt5088lt1-d.pdf
MMBT5088LT1
Виробник: onsemi
Description: TRANS NPN 30V 50MA SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MMBT5089LT1 mmbt5088lt1-d.pdf
MMBT5089LT1
Виробник: onsemi
Description: TRANS NPN 25V 50MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 225 mW
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В кошику  од. на суму  грн.
MPS2222ARLRA mps2222-d.pdf
MPS2222ARLRA
Виробник: onsemi
Description: TRANS NPN SS GP 40V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MPSA06RLRA pzta06-d.pdf
MPSA06RLRA
Виробник: onsemi
Description: TRANS NPN SS GP 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
PN2222ARLRA DS_488_PN2222.pdf
PN2222ARLRA
Виробник: onsemi
Description: TRANS SS GP NPN 600MA 40V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
PN2907ARLRA PN2907A-D.pdf
PN2907ARLRA
Виробник: onsemi
Description: TRANS PNP 60V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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В кошику  од. на суму  грн.
MPS2907ARLRA mps2907a-d.pdf
MPS2907ARLRA
Виробник: onsemi
Description: TRANS PNP SS GP 60V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MMBTA05LT1 mmbta05lt1-d.pdf
MMBTA05LT1
Виробник: onsemi
Description: TRANS DRIVER SS NPN 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MPSA56RLRA pzta06-d.pdf
MPSA56RLRA
Виробник: onsemi
Description: TRANS PNP SS GP 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MPSA13RLRA mpsa13-d.pdf
MPSA13RLRA
Виробник: onsemi
Description: TRANS NPN DARL 30V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MMBT5550LT1 mmbt5550lt1-d.pdf
MMBT5550LT1
Виробник: onsemi
Description: TRANS SS NPN 140V HV SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MMBTA13LT1 mmbta13lt1-d.pdf
MMBTA13LT1
Виробник: onsemi
Description: TRANS SS DARL NPN 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MMBTA14LT1 MMBTA13LT1-D.pdf
MMBTA14LT1
Виробник: onsemi
Description: TRANS NPN DARL 30V 0.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 10mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
товару немає в наявності
В кошику  од. на суму  грн.
MMBTA55LT1 MMBTA55LT1-D.pdf
MMBTA55LT1
Виробник: onsemi
Description: TRANS DRIVER SS PNP 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MMBTA63LT1 MMBT%2CSMMBTA%2863%2C64%29LT1G.pdf
MMBTA63LT1
Виробник: onsemi
Description: TRANS SS DARL PNP 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MMBTA64LT1 mmbta63lt1-d.pdf
MMBTA64LT1
Виробник: onsemi
Description: TRANS SS DARL PNP 30V SOT23
Packaging: Cut Tape (CT)
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В кошику  од. на суму  грн.
MPS4124RLRA mps4124-d.pdf
MPS4124RLRA
Виробник: onsemi
Description: TRANS NPN SS GP 25V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MPSA55RLRA pzta06-d.pdf
MPSA55RLRA
Виробник: onsemi
Description: TRANS PNP SS GP 60V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2N7002LT1 2n7002l-d.pdf
2N7002LT1
Виробник: onsemi
Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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MPSA27RLRA mpsa27-d.pdf
MPSA27RLRA
Виробник: onsemi
Description: TRANS NPN DARL SS 60V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MPSA29RLRP mpsa28-d.pdf
MPSA29RLRP
Виробник: onsemi
Description: TRANS NPN DARL SS 100V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MPSA42RLRA MPSA42-D.pdf
MPSA42RLRA
Виробник: onsemi
Description: TRANS NPN SS GP 500MA 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MPSA92RLRA mpsa92-d.pdf
MPSA92RLRA
Виробник: onsemi
Description: TRANS PNP SS GP HV 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2N5551RLRA 2n5551t-d.pdf
2N5551RLRA
Виробник: onsemi
Description: TRANS NPN 160V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
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MBT3906DW1T1 MBT%2CSMBT3906DW1T1.pdf
MBT3906DW1T1
Виробник: onsemi
Description: TRANS 2PNP 40V 0.2A SOT363
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MBT3946DW1T1 mbt3946dw1t1-d.pdf
MBT3946DW1T1
Виробник: onsemi
Description: TRANS DUAL GP 200MA 40V SOT363
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
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MMBTH10LT1 NSV%2CS%2CMMBTH10L%284L%29.pdf
MMBTH10LT1
Виробник: onsemi
Description: TRANS SS VHF NPN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
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MPSH10RLRA mpsh10-d.pdf
MPSH10RLRA
Виробник: onsemi
Description: TRANS NPN VHF/UHF SS 25V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
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