| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDMA7630 | onsemi |
Description: MOSFET N-CH 30V 11A 6MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FDMC3612 | onsemi |
Description: MOSFET N-CH 100V 3.3A/16A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 2.3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDMC510P | onsemi |
Description: MOSFET P-CH 20V 12A/18A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7860 pF @ 10 V |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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FDME510PZT | onsemi |
Description: MOSFET P-CH 20V 6A MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: MicroFet 1.6x1.6 Thin Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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FDML7610S | onsemi |
Description: MOSFET 2N-CH 30V 12A/17A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 17A Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3x4.5) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS7578 | onsemi |
Description: MOSFET N-CH 25V 17A/28A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 17A, 10V Power Dissipation (Max): 2.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDMS7580 | onsemi |
Description: MOSFET N-CH 25V 15A/29A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDMS7602S | onsemi |
Description: MOSFET 2N-CH 30V 12A/17A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 17A Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMS7694 | onsemi |
Description: MOSFET N-CH 30V 13.2A/20A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.2A, 10V Power Dissipation (Max): 2.5W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDMS8023S | onsemi |
Description: MOSFET N-CH 30V 26A/49A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V Power Dissipation (Max): 2.5W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDMS8026S | onsemi |
Description: MOSFET N-CH 30V 19A/22A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDMS8027S | onsemi |
Description: MOSFET N-CH 30V 18A/22A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDMS86200 | onsemi |
Description: MOSFET N-CH 150V 9.6A/35A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2715 pF @ 75 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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FDMS86201 | onsemi |
Description: MOSFET N-CH 120V 11.6A/49A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 11.6A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2735 pF @ 60 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDS4675-F085 | onsemi |
Description: MOSFET P-CH 40V 11A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS8949-F085 | onsemi |
Description: MOSFET 2N-CH 40V 6A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS8958A-F085 | onsemi |
Description: MOSFET N/P-CH 30V 7A/5A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5A Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FFPF10UA60ST | onsemi |
Description: DIODE AVAL 600V 10A TO220F2LPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Avalanche Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGH40N60SMDF | onsemi |
Description: IGBT FIELD STOP 600V 80A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 12ns/92ns Switching Energy: 1.3mJ (on), 260µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 119 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 349 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGH60N60SMD | onsemi |
Description: IGBT FIELD STOP 600V 120A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 39 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 18ns/104ns Switching Energy: 1.26mJ (on), 450µJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 189 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 600 W |
на замовлення 1625 шт: термін постачання 21-31 дні (днів) |
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FNA40560 | onsemi |
Description: MODULE SPM 600V 5A 26PWRDIPPackaging: Tube Package / Case: 26-PowerDIP Module (1.024", 26.00mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 5 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FNA41060 | onsemi |
Description: MOD SPM 600V 10A SPM26-AAPackaging: Tube Package / Case: 26-PowerDIP Module (1.024", 26.00mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 10 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FNA41560 | onsemi |
Description: MODULE SPM 600V 15A 26PWRDIPPackaging: Tube Package / Case: 26-PowerDIP Module (1.024", 26.00mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 15 A Voltage: 600 V |
на замовлення 65 шт: термін постачання 21-31 дні (днів) |
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FNB40560 | onsemi |
Description: MODULE SPM 600V 5A 26PWRDIPPackaging: Tube Package / Case: 26-PowerDIP Module (1.024", 26.00mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Part Status: Not For New Designs Current: 5 A Voltage: 600 V |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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FT8010MPX | onsemi |
Description: IC SUPERVISOR RESET TIMER 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Output: Open Drain, Push-Pull Type: Reset Timer Reset: Active High/Active Low Operating Temperature: -40°C ~ 85°C (TA) Reset Timeout: Adjustable/Selectable Supplier Device Package: 8-MLP (2x2) Part Status: Obsolete DigiKey Programmable: Not Verified |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FXMA2102L8X | onsemi |
Description: IC XLTR VL BIDIR 8-MICROPAKPackaging: Tape & Reel (TR) Package / Case: 8-UFQFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 37MHz Supplier Device Package: 8-MicroPak™ Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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HCPL2611M | onsemi |
Description: OPTOISOLTR 5KV OPEN COLL 8-DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Open Collector Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 50ns, 12ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 2130 шт: термін постачання 21-31 дні (днів) |
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QSE1103 | onsemi |
Description: SENSOR PHOTO 880NM SID VIEW 3SIP Packaging: Bulk Package / Case: 3-SIP, Side View Wavelength: 880nm Mounting Type: Through Hole, Right Angle Orientation: Side View Operating Temperature: -40°C ~ 85°C Viewing Angle: 50° Voltage - Collector Emitter Breakdown (Max): 5.5 V Power - Max: 100 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDMA507PZ | onsemi |
Description: MOSFET P-CH 20V 7.8A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 10 V |
на замовлення 5479 шт: термін постачання 21-31 дні (днів) |
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FDMA7630 | onsemi |
Description: MOSFET N-CH 30V 11A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V |
на замовлення 10130 шт: термін постачання 21-31 дні (днів) |
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FDMC3612 | onsemi |
Description: MOSFET N-CH 100V 3.3A/16A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 2.3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V |
на замовлення 15393 шт: термін постачання 21-31 дні (днів) |
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FDMC510P | onsemi |
Description: MOSFET P-CH 20V 12A/18A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7860 pF @ 10 V |
на замовлення 66032 шт: термін постачання 21-31 дні (днів) |
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FDML7610S | onsemi |
Description: MOSFET 2N-CH 30V 12A/17A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 17A Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3x4.5) |
на замовлення 4400 шт: термін постачання 21-31 дні (днів) |
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FDMS7580 | onsemi |
Description: MOSFET N-CH 25V 15A/29A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V |
на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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FDMS7602S | onsemi |
Description: MOSFET 2N-CH 30V 12A/17A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 17A Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 |
на замовлення 6224 шт: термін постачання 21-31 дні (днів) |
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FDMS7694 | onsemi |
Description: MOSFET N-CH 30V 13.2A/20A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.2A, 10V Power Dissipation (Max): 2.5W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 15 V |
на замовлення 2927 шт: термін постачання 21-31 дні (днів) |
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FDMS8023S | onsemi |
Description: MOSFET N-CH 30V 26A/49A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V Power Dissipation (Max): 2.5W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V |
на замовлення 1833 шт: термін постачання 21-31 дні (днів) |
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FDMS8026S | onsemi |
Description: MOSFET N-CH 30V 19A/22A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V |
на замовлення 1440 шт: термін постачання 21-31 дні (днів) |
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FDMS8027S | onsemi |
Description: MOSFET N-CH 30V 18A/22A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V |
на замовлення 2965 шт: термін постачання 21-31 дні (днів) |
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FDMS86200 | onsemi |
Description: MOSFET N-CH 150V 9.6A/35A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2715 pF @ 75 V |
на замовлення 25089 шт: термін постачання 21-31 дні (днів) |
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FDMS86201 | onsemi |
Description: MOSFET N-CH 120V 11.6A/49A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 11.6A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2735 pF @ 60 V |
на замовлення 4994 шт: термін постачання 21-31 дні (днів) |
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FDS4675-F085 | onsemi |
Description: MOSFET P-CH 40V 11A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDME510PZT | onsemi |
Description: MOSFET P-CH 20V 6A MICROFETPackaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: MicroFet 1.6x1.6 Thin Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V |
на замовлення 39867 шт: термін постачання 21-31 дні (днів) |
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FXMA2102L8X | onsemi |
Description: IC XLTR VL BIDIR 8-MICROPAKPackaging: Cut Tape (CT) Package / Case: 8-UFQFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 37MHz Supplier Device Package: 8-MicroPak™ Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 |
на замовлення 11996 шт: термін постачання 21-31 дні (днів) |
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6N137SDM | onsemi |
Description: OPTOISOLTR 5KV OPEN COLL 8-SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 3744 шт: термін постачання 21-31 дні (днів) |
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ESDR0544MDMR4G | onsemi |
Description: TVS DIODE 5VWM 10MICROPackaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI Capacitance @ Frequency: 0.7pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 10-Micro Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Power Line Protection: Yes |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC163ADTG | onsemi |
Description: IC BINARY COUNTER 4-BIT 16TSSOPPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Synchronous Operating Temperature: -55°C ~ 125°C (TA) Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-TSSOP Part Status: Last Time Buy Voltage - Supply: 2 V ~ 6 V Count Rate: 35 MHz Number of Bits per Element: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTLUD3A260PZTAG | onsemi |
Description: MOSFET 2P-CH 20V 1.3A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| CMPWR280TN | onsemi |
Description: IC REG LINEAR 3.3V 1.5A TO263-5Packaging: Tape & Reel (TR) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: 0°C ~ 70°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: TO-263-5 Voltage - Output (Min/Fixed): 3.3V Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 3 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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CM6400A | onsemi |
Description: FILTER LC(PI) 35NH/15PF ESD SMDPackaging: Tape & Reel (TR) Package / Case: 24-WFBGA, WLCSP Size / Dimension: 0.077" L x 0.077" W (1.96mm x 1.96mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: L = 35nH, C = 15pF Height: 0.025" (0.64mm) Attenuation Value: -7dB @ 5MHz Filter Order: 3rd Applications: Data Lines for Mobile Devices Technology: LC (Pi) Center / Cutoff Frequency: 250MHz (Cutoff) Resistance - Channel (Ohms): 125 ESD Protection: Yes Number of Channels: 10 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CAT4002ATD-GT3 | onsemi |
Description: IC LED DRIVER LIN DIM TSOT23-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| CM1443-04CP | onsemi |
Description: FILTER RC(PI) 100 OHMS ESD SMDPackaging: Tape & Reel (TR) Package / Case: 10-WFBGA, WLCSP Size / Dimension: 0.061" L x 0.041" W (1.56mm x 1.05mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 8.5pF Height: 0.027" (0.69mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 220MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Obsolete Number of Channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC153ADG | onsemi |
Description: IC MULTIPLEXER 2 X 4:1 16-SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 2 x 4:1 Type: Multiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOIC Part Status: Active |
на замовлення 82240 шт: термін постачання 21-31 дні (днів) |
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MC74HC368ADTG | onsemi |
Description: IC BUFFER INVERT 6V 16TSSOPPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 2, 4 (Hex) Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 16-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC11ADG | onsemi |
Description: IC GATE AND 3CH 3-INP 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 3 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF Part Status: Active Number of Circuits: 3 Current - Quiescent (Max): 1 µA |
на замовлення 56465 шт: термін постачання 21-31 дні (днів) |
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MC74HCT241ADTG | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-TSSOP Part Status: Active |
на замовлення 1162 шт: термін постачання 21-31 дні (днів) |
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CAT24C64HU4I-GT3 | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 8UDFNPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN-EP (2x3) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MC74HC153ADTG | onsemi |
Description: IC MULTIPLEXER 2 X 4:1 16-TSSOPPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 2 x 4:1 Type: Multiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC251ADG | onsemi |
Description: IC MULTIPLEXER 1 X 8:1 16-SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:1 Type: Multiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOIC Part Status: Active |
на замовлення 695 шт: термін постачання 21-31 дні (днів) |
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CAT24C02ZI-GT3A | onsemi |
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| FDMA7630 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 11A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
Description: MOSFET N-CH 30V 11A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.91 грн |
| 6000+ | 14.12 грн |
| 9000+ | 13.50 грн |
| FDMC3612 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 3.3A/16A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Description: MOSFET N-CH 100V 3.3A/16A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 20.51 грн |
| 6000+ | 18.28 грн |
| 9000+ | 17.52 грн |
| 15000+ | 15.82 грн |
| FDMC510P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 12A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7860 pF @ 10 V
Description: MOSFET P-CH 20V 12A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7860 pF @ 10 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 65.03 грн |
| FDME510PZT |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 6A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
Description: MOSFET P-CH 20V 6A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 24.54 грн |
| 10000+ | 22.54 грн |
| 25000+ | 22.49 грн |
| FDML7610S |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A/17A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3x4.5)
Description: MOSFET 2N-CH 30V 12A/17A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3x4.5)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 66.38 грн |
| FDMS7578 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 25V 17A/28A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 13 V
Description: MOSFET N-CH 25V 17A/28A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 13 V
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| FDMS7580 |
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Виробник: onsemi
Description: MOSFET N-CH 25V 15A/29A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V
Description: MOSFET N-CH 25V 15A/29A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V
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| FDMS7602S |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A/17A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 12A/17A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 39.02 грн |
| 6000+ | 35.90 грн |
| FDMS7694 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 13.2A/20A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 15 V
Description: MOSFET N-CH 30V 13.2A/20A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 15 V
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| FDMS8023S |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 26A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V
Description: MOSFET N-CH 30V 26A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V
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| FDMS8026S |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
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| FDMS8027S |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
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| FDMS86200 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 9.6A/35A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2715 pF @ 75 V
Description: MOSFET N-CH 150V 9.6A/35A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2715 pF @ 75 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 69.97 грн |
| FDMS86201 |
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Виробник: onsemi
Description: MOSFET N-CH 120V 11.6A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 11.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2735 pF @ 60 V
Description: MOSFET N-CH 120V 11.6A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 11.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2735 pF @ 60 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 73.13 грн |
| FDS4675-F085 |
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Виробник: onsemi
Description: MOSFET P-CH 40V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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| FDS8949-F085 |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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| FDS8958A-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N/P-CH 30V 7A/5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 7A/5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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| FFPF10UA60ST |
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Виробник: onsemi
Description: DIODE AVAL 600V 10A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE AVAL 600V 10A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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| FGH40N60SMDF |
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Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 1.3mJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 1.3mJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
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| FGH60N60SMD |
![]() |
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 39 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/104ns
Switching Energy: 1.26mJ (on), 450µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 189 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 39 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/104ns
Switching Energy: 1.26mJ (on), 450µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 189 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
на замовлення 1625 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 480.52 грн |
| 30+ | 266.43 грн |
| 120+ | 223.25 грн |
| 510+ | 179.90 грн |
| FNA40560 |
![]() |
Виробник: onsemi
Description: MODULE SPM 600V 5A 26PWRDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 5 A
Voltage: 600 V
Description: MODULE SPM 600V 5A 26PWRDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 5 A
Voltage: 600 V
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| FNA41060 |
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Виробник: onsemi
Description: MOD SPM 600V 10A SPM26-AA
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Description: MOD SPM 600V 10A SPM26-AA
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
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| FNA41560 |
![]() |
Виробник: onsemi
Description: MODULE SPM 600V 15A 26PWRDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
Description: MODULE SPM 600V 15A 26PWRDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1445.45 грн |
| 10+ | 1279.28 грн |
| FNB40560 |
![]() |
Виробник: onsemi
Description: MODULE SPM 600V 5A 26PWRDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Not For New Designs
Current: 5 A
Voltage: 600 V
Description: MODULE SPM 600V 5A 26PWRDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Not For New Designs
Current: 5 A
Voltage: 600 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1093.44 грн |
| FT8010MPX |
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Виробник: onsemi
Description: IC SUPERVISOR RESET TIMER 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain, Push-Pull
Type: Reset Timer
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Reset Timeout: Adjustable/Selectable
Supplier Device Package: 8-MLP (2x2)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR RESET TIMER 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain, Push-Pull
Type: Reset Timer
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Reset Timeout: Adjustable/Selectable
Supplier Device Package: 8-MLP (2x2)
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 28.52 грн |
| 6000+ | 26.09 грн |
| FXMA2102L8X |
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Виробник: onsemi
Description: IC XLTR VL BIDIR 8-MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 37MHz
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 37MHz
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 11.94 грн |
| 10000+ | 11.21 грн |
| HCPL2611M |
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Виробник: onsemi
Description: OPTOISOLTR 5KV OPEN COLL 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 5KV OPEN COLL 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 2130 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.68 грн |
| 50+ | 51.19 грн |
| 100+ | 47.28 грн |
| 500+ | 37.83 грн |
| 1000+ | 35.69 грн |
| 2000+ | 33.87 грн |
| QSE1103 |
Виробник: onsemi
Description: SENSOR PHOTO 880NM SID VIEW 3SIP
Packaging: Bulk
Package / Case: 3-SIP, Side View
Wavelength: 880nm
Mounting Type: Through Hole, Right Angle
Orientation: Side View
Operating Temperature: -40°C ~ 85°C
Viewing Angle: 50°
Voltage - Collector Emitter Breakdown (Max): 5.5 V
Power - Max: 100 mW
Description: SENSOR PHOTO 880NM SID VIEW 3SIP
Packaging: Bulk
Package / Case: 3-SIP, Side View
Wavelength: 880nm
Mounting Type: Through Hole, Right Angle
Orientation: Side View
Operating Temperature: -40°C ~ 85°C
Viewing Angle: 50°
Voltage - Collector Emitter Breakdown (Max): 5.5 V
Power - Max: 100 mW
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| FDMA507PZ |
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Виробник: onsemi
Description: MOSFET P-CH 20V 7.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 10 V
Description: MOSFET P-CH 20V 7.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 10 V
на замовлення 5479 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.27 грн |
| 10+ | 74.47 грн |
| 100+ | 49.80 грн |
| 500+ | 36.80 грн |
| 1000+ | 33.60 грн |
| FDMA7630 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 11A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
Description: MOSFET N-CH 30V 11A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
на замовлення 10130 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.42 грн |
| 10+ | 39.00 грн |
| 100+ | 25.44 грн |
| 500+ | 18.39 грн |
| 1000+ | 16.63 грн |
| FDMC3612 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 3.3A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Description: MOSFET N-CH 100V 3.3A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
на замовлення 15393 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.00 грн |
| 10+ | 48.90 грн |
| 100+ | 32.18 грн |
| 500+ | 23.46 грн |
| 1000+ | 21.29 грн |
| FDMC510P |
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Виробник: onsemi
Description: MOSFET P-CH 20V 12A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7860 pF @ 10 V
Description: MOSFET P-CH 20V 12A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7860 pF @ 10 V
на замовлення 66032 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 206.38 грн |
| 10+ | 134.39 грн |
| 100+ | 92.72 грн |
| 500+ | 70.28 грн |
| 1000+ | 64.90 грн |
| FDML7610S |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A/17A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3x4.5)
Description: MOSFET 2N-CH 30V 12A/17A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3x4.5)
на замовлення 4400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.86 грн |
| 10+ | 125.47 грн |
| 100+ | 100.85 грн |
| 500+ | 77.76 грн |
| 1000+ | 64.43 грн |
| FDMS7580 |
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Виробник: onsemi
Description: MOSFET N-CH 25V 15A/29A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V
Description: MOSFET N-CH 25V 15A/29A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 116.82 грн |
| 10+ | 92.24 грн |
| 100+ | 71.79 грн |
| 500+ | 57.10 грн |
| 1000+ | 46.52 грн |
| FDMS7602S |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A/17A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 12A/17A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
на замовлення 6224 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.41 грн |
| 10+ | 85.65 грн |
| 100+ | 58.05 грн |
| 500+ | 43.37 грн |
| 1000+ | 41.23 грн |
| FDMS7694 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 13.2A/20A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 15 V
Description: MOSFET N-CH 30V 13.2A/20A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 15 V
на замовлення 2927 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.02 грн |
| 100+ | 27.85 грн |
| 500+ | 23.49 грн |
| 1000+ | 22.22 грн |
| FDMS8023S |
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Виробник: onsemi
Description: MOSFET N-CH 30V 26A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V
Description: MOSFET N-CH 30V 26A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V
на замовлення 1833 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 107.47 грн |
| 10+ | 65.85 грн |
| 100+ | 43.94 грн |
| 500+ | 32.41 грн |
| 1000+ | 29.57 грн |
| FDMS8026S |
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Виробник: onsemi
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 187.69 грн |
| 10+ | 116.32 грн |
| 100+ | 79.89 грн |
| 500+ | 60.34 грн |
| 1000+ | 55.64 грн |
| FDMS8027S |
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Виробник: onsemi
Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.49 грн |
| 10+ | 92.02 грн |
| 100+ | 65.65 грн |
| 500+ | 50.29 грн |
| 1000+ | 20.69 грн |
| FDMS86200 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 9.6A/35A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2715 pF @ 75 V
Description: MOSFET N-CH 150V 9.6A/35A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2715 pF @ 75 V
на замовлення 25089 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 221.18 грн |
| 10+ | 138.89 грн |
| 100+ | 96.50 грн |
| 500+ | 77.40 грн |
| FDMS86201 |
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Виробник: onsemi
Description: MOSFET N-CH 120V 11.6A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 11.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2735 pF @ 60 V
Description: MOSFET N-CH 120V 11.6A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 11.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2735 pF @ 60 V
на замовлення 4994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 228.97 грн |
| 10+ | 143.69 грн |
| 100+ | 100.02 грн |
| 500+ | 80.90 грн |
| FDS4675-F085 |
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Виробник: onsemi
Description: MOSFET P-CH 40V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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| FDME510PZT |
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Виробник: onsemi
Description: MOSFET P-CH 20V 6A MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
Description: MOSFET P-CH 20V 6A MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
на замовлення 39867 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 62.30 грн |
| 10+ | 49.12 грн |
| 100+ | 38.17 грн |
| 500+ | 30.36 грн |
| 1000+ | 24.73 грн |
| 2000+ | 23.28 грн |
| FXMA2102L8X |
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Виробник: onsemi
Description: IC XLTR VL BIDIR 8-MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 37MHz
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 37MHz
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
на замовлення 11996 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.04 грн |
| 16+ | 18.97 грн |
| 25+ | 16.95 грн |
| 100+ | 13.78 грн |
| 250+ | 12.76 грн |
| 500+ | 12.15 грн |
| 1000+ | 11.46 грн |
| 6N137SDM |
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Виробник: onsemi
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 3744 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.13 грн |
| 10+ | 66.67 грн |
| 100+ | 50.13 грн |
| 500+ | 40.16 грн |
| ESDR0544MDMR4G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 10MICRO
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-Micro
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Description: TVS DIODE 5VWM 10MICRO
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-Micro
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
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| MC74HC163ADTG |
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Виробник: onsemi
Description: IC BINARY COUNTER 4-BIT 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: -55°C ~ 125°C (TA)
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-TSSOP
Part Status: Last Time Buy
Voltage - Supply: 2 V ~ 6 V
Count Rate: 35 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: -55°C ~ 125°C (TA)
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-TSSOP
Part Status: Last Time Buy
Voltage - Supply: 2 V ~ 6 V
Count Rate: 35 MHz
Number of Bits per Element: 4
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| NTLUD3A260PZTAG |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 1.3A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Description: MOSFET 2P-CH 20V 1.3A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
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| CMPWR280TN |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 1.5A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 3.3V
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 3 mA
Description: IC REG LINEAR 3.3V 1.5A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 3.3V
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 3 mA
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| CM6400A |
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Виробник: onsemi
Description: FILTER LC(PI) 35NH/15PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 24-WFBGA, WLCSP
Size / Dimension: 0.077" L x 0.077" W (1.96mm x 1.96mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 35nH, C = 15pF
Height: 0.025" (0.64mm)
Attenuation Value: -7dB @ 5MHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 125
ESD Protection: Yes
Number of Channels: 10
Description: FILTER LC(PI) 35NH/15PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 24-WFBGA, WLCSP
Size / Dimension: 0.077" L x 0.077" W (1.96mm x 1.96mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 35nH, C = 15pF
Height: 0.025" (0.64mm)
Attenuation Value: -7dB @ 5MHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 125
ESD Protection: Yes
Number of Channels: 10
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| CAT4002ATD-GT3 |
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Виробник: onsemi
Description: IC LED DRIVER LIN DIM TSOT23-6
Description: IC LED DRIVER LIN DIM TSOT23-6
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| CM1443-04CP |
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Виробник: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, WLCSP
Size / Dimension: 0.061" L x 0.041" W (1.56mm x 1.05mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 8.5pF
Height: 0.027" (0.69mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 220MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 4
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, WLCSP
Size / Dimension: 0.061" L x 0.041" W (1.56mm x 1.05mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 8.5pF
Height: 0.027" (0.69mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 220MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 4
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| MC74HC153ADG |
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Виробник: onsemi
Description: IC MULTIPLEXER 2 X 4:1 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Part Status: Active
Description: IC MULTIPLEXER 2 X 4:1 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 82240 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.93 грн |
| 14+ | 21.60 грн |
| 48+ | 17.95 грн |
| 144+ | 15.21 грн |
| 288+ | 14.42 грн |
| 528+ | 13.83 грн |
| 1008+ | 13.09 грн |
| 2544+ | 12.50 грн |
| 5040+ | 12.16 грн |
| MC74HC368ADTG |
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Виробник: onsemi
Description: IC BUFFER INVERT 6V 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-TSSOP
Description: IC BUFFER INVERT 6V 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-TSSOP
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| MC74HC11ADG |
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Виробник: onsemi
Description: IC GATE AND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
на замовлення 56465 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 77.88 грн |
| 10+ | 45.30 грн |
| 55+ | 32.30 грн |
| 110+ | 26.68 грн |
| 275+ | 22.76 грн |
| 550+ | 20.35 грн |
| 1045+ | 18.17 грн |
| 2530+ | 16.07 грн |
| 5005+ | 14.74 грн |
| MC74HCT241ADTG |
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Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-TSSOP
Part Status: Active
на замовлення 1162 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.11 грн |
| 10+ | 49.50 грн |
| 75+ | 33.55 грн |
| 150+ | 27.87 грн |
| 300+ | 24.84 грн |
| 525+ | 22.75 грн |
| 1050+ | 20.21 грн |
| CAT24C64HU4I-GT3 |
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Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 23.95 грн |
| MC74HC153ADTG |
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Виробник: onsemi
Description: IC MULTIPLEXER 2 X 4:1 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
Description: IC MULTIPLEXER 2 X 4:1 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
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| MC74HC251ADG |
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Виробник: onsemi
Description: IC MULTIPLEXER 1 X 8:1 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Part Status: Active
Description: IC MULTIPLEXER 1 X 8:1 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 695 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.65 грн |
| 10+ | 41.85 грн |
| 48+ | 30.58 грн |
| 144+ | 23.44 грн |
| 288+ | 20.80 грн |
| 528+ | 18.85 грн |
| CAT24C02ZI-GT3A |
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Виробник: onsemi
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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