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NDD04N60Z-1G NDD04N60Z-1G onsemi NDx04N60Z.pdf Description: MOSFET N-CH 600V 4.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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NDD04N60ZT4G NDD04N60ZT4G onsemi NDx04N60Z.pdf Description: MOSFET N-CH 600V 4.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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NLSV1T34AMX1TCG NLSV1T34AMX1TCG onsemi nlsv1t34-d.pdf Description: IC TRANSLATOR UNIDIR 6ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 6-XFLGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 4.5V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 6-ULLGA (1.45x1)
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NLSV1T34DFT2G NLSV1T34DFT2G onsemi nlsv1t34-d.pdf Description: IC TRNSLTR UNIDIRECTIONAL SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 4.5V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+26.52 грн
6000+23.61 грн
9000+22.62 грн
15000+21.03 грн
Мінімальне замовлення: 3000
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NLSX3018DTR2G NLSX3018DTR2G onsemi nlsx3018-d.pdf Description: IC TRNSLTR BIDIRECTIONAL 20TSSOP
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NLSX3018DWR2G NLSX3018DWR2G onsemi nlsx3018-d.pdf Description: IC TRNSLTR BIDIRECTIONAL 20SOIC
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NLX1G332AMX1TCG NLX1G332AMX1TCG onsemi nlx1g332-d.pdf Description: IC GATE OR 1CH 3-INP 6ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-ULLGA (1.45x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NLX1G99AMX1TCG NLX1G99AMX1TCG onsemi nlx1g99-d.pdf Description: IC MINIGATE MULTIFUNC 8ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Output Type: Tri-State
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 4
Schmitt Trigger Input: Yes
Supplier Device Package: 8-ULLGA (1.95x1)
Number of Circuits: 1
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NLX1G99BMX1TCG NLX1G99BMX1TCG onsemi nlx1g99-d.pdf Description: IC MINIGATE MULTIFUNC 8ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Output Type: Tri-State
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 4
Schmitt Trigger Input: Yes
Supplier Device Package: 8-ULLGA (1.6x1)
Number of Circuits: 1
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NLX1G99CMX1TCG NLX1G99CMX1TCG onsemi nlx1g99-d.pdf Description: IC MINIGATE MULTIFUNC 8ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Output Type: Tri-State
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 4
Schmitt Trigger Input: Yes
Supplier Device Package: 8-ULLGA (1.45x1)
Number of Circuits: 1
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NSI50010YT1G NSI50010YT1G onsemi nsi50010y-d.pdf Description: IC CURRENT REGULATOR SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 50V
Current - Output: 10mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
на замовлення 23000 шт:
термін постачання 21-31 дні (днів)
3000+11.89 грн
6000+10.42 грн
9000+9.90 грн
15000+8.74 грн
21000+8.41 грн
Мінімальне замовлення: 3000
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NTB6412ANG NTB6412ANG onsemi ntb6412an-d.pdf Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
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NTB6412ANT4G NTB6412ANT4G onsemi ntb6412an-d.pdf Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
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NTB6413ANT4G NTB6413ANT4G onsemi ntb6413an-d.pdf Description: MOSFET N-CH 100V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 42A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 31200 шт:
термін постачання 21-31 дні (днів)
800+74.36 грн
1600+66.48 грн
2400+65.39 грн
Мінімальне замовлення: 800
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NTD4910N-35G NTD4910N-35G onsemi ntd4910n-d.pdf Description: MOSFET N-CH 30V 8.2A/37A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.37W (Ta), 27.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 15 V
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NTD6414AN-1G NTD6414AN-1G onsemi ntd6414an-d.pdf Description: MOSFET N-CH 100V 32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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NTD6414ANT4G NTD6414ANT4G onsemi ntd6414an-d.pdf Description: MOSFET N-CH 100V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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NTD6415AN-1G NTD6415AN-1G onsemi ntd6415an-d.pdf Description: MOSFET N-CH 100V 23A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 23A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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NTD6415ANT4G NTD6415ANT4G onsemi ntd6415an-d.pdf Description: MOSFET N-CH 100V 23A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 23A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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NTD6416AN-1G NTD6416AN-1G onsemi ntd6416an-d.pdf Description: MOSFET N-CH 100V 17A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
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NTD6416ANL-1G NTD6416ANL-1G onsemi ntd6416anl-d.pdf Description: MOSFET N-CH 100V 19A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
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NTD6416ANLT4G NTD6416ANLT4G onsemi ntd6416anl-d.pdf Description: MOSFET N-CH 100V 19A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+37.27 грн
Мінімальне замовлення: 2500
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NTD6416ANT4G NTD6416ANT4G onsemi ntd6416an-d.pdf Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+34.96 грн
5000+31.62 грн
Мінімальне замовлення: 2500
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NTMFS4852NT1G NTMFS4852NT1G onsemi Description: MOSFET N-CH 30V 16A/155A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 12 V
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NTMFS4921NT1G NTMFS4921NT1G onsemi ntmfs4921n.pdf Description: MOSFET N-CH 30V 8.8A/58.5A 5DFN
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NTMFS4921NT3G NTMFS4921NT3G onsemi ntmfs4921n.pdf Description: MOSFET N-CH 30V 8.8A/58.5A 5DFN
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NTMS4920NR2G NTMS4920NR2G onsemi ntms4920n-d.pdf Description: MOSFET N-CH 30V 10.6A 8SOIC
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NTP6411ANG NTP6411ANG onsemi ntb6411n-d.pdf Description: MOSFET N-CH 100V 77A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
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NTP6412ANG NTP6412ANG onsemi ntb6412an-d.pdf Description: MOSFET N-CH 100V 58A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
на замовлення 53 шт:
термін постачання 21-31 дні (днів)
2+219.91 грн
50+105.19 грн
Мінімальне замовлення: 2
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NTTFS4800NTAG NTTFS4800NTAG onsemi nttfs4800n-d.pdf Description: MOSFET N-CH 30V 5A/32A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 964 pF @ 15 V
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NTTFS4840NTAG NTTFS4840NTAG onsemi nttfs4840.pdf Description: MOSFET N-CH 30V 4.6A/26A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
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NTTFS4932NTAG NTTFS4932NTAG onsemi nttfs4932n-d.pdf Description: MOSFET N-CH 30V 11A/79A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 15 V
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NTTFS4937NTAG NTTFS4937NTAG onsemi nttfs4937n-d.pdf Description: MOSFET N-CH 30V 11A/75A 8WDFN
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NTTFS4937NTWG NTTFS4937NTWG onsemi nttfs4937n-d.pdf Description: MOSFET N-CH 30V 11A/75A 8WDFN
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NTTFS4939NTAG NTTFS4939NTAG onsemi nttfs4939n-d.pdf Description: MOSFET N-CH 30V 8.9A/52A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 15 V
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NTTFS4939NTWG NTTFS4939NTWG onsemi nttfs4939n-d.pdf Description: MOSFET N-CH 30V 8.9A/52A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 15 V
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NTTFS4941NTAG NTTFS4941NTAG onsemi nttfs4941n-d.pdf Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V
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NTTFS4941NTWG NTTFS4941NTWG onsemi nttfs4941n-d.pdf Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
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NTTFS4943NTAG NTTFS4943NTAG onsemi nttfs4943n-d.pdf Description: MOSFET N-CH 30V 8A/41A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 22.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
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NTTFS4943NTWG NTTFS4943NTWG onsemi nttfs4943n-d.pdf Description: MOSFET N-CH 30V 8A/41A 8WDFN
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NTTFS4945NTAG NTTFS4945NTAG onsemi nttfs4945n-d.pdf Description: MOSFET N-CH 30V 7.1A/34A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 890mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V
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NTTFS4945NTWG NTTFS4945NTWG onsemi nttfs4945n-d.pdf Description: MOSFET N-CH 30V 7.1A/34A 8WDFN
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NCP3418DR2 NCP3418DR2 onsemi ncp3418-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.6V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 30 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
DigiKey Programmable: Not Verified
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FDPF8N50NZ FDPF8N50NZ onsemi FDP%28F%298N50NZ.pdf Description: MOSFET N-CH 500V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
3+152.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDP5N50NZ FDP5N50NZ onsemi FAIRS46396-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 3522 шт:
термін постачання 21-31 дні (днів)
4+96.85 грн
10+76.53 грн
100+59.52 грн
500+47.34 грн
1000+38.57 грн
2000+36.31 грн
Мінімальне замовлення: 4
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FAN7930M FAN7930M onsemi Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
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FDD86102 FDD86102 onsemi fdd86102-d.pdf Description: MOSFET N-CH 100V 8A/36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
на замовлення 62500 шт:
термін постачання 21-31 дні (днів)
2500+53.55 грн
5000+51.36 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FXMA108BQX FXMA108BQX onsemi fxma108-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 20DQFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-DQFN (2.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
3000+27.04 грн
6000+24.08 грн
9000+23.09 грн
15000+21.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDD86102 FDD86102 onsemi fdd86102-d.pdf Description: MOSFET N-CH 100V 8A/36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
на замовлення 62546 шт:
термін постачання 21-31 дні (днів)
2+158.78 грн
10+105.27 грн
100+73.45 грн
500+57.63 грн
1000+51.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FXMA108BQX FXMA108BQX onsemi fxma108-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 20DQFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-DQFN (2.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 50436 шт:
термін постачання 21-31 дні (днів)
4+105.59 грн
10+61.54 грн
25+51.56 грн
100+38.08 грн
250+33.16 грн
500+30.18 грн
1000+27.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
7WBD3306AMUTCG 7WBD3306AMUTCG onsemi 7wbd3306-d.pdf Description: IC BUS SWITCH 1 X 1:1 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
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7WBD3306USG 7WBD3306USG onsemi 7wbd3306-d.pdf Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: US8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+19.74 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ADP3212AMNR2G ADP3212AMNR2G onsemi adp3212a-d.pdf Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Up to 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
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ASM3I2669AF-06OR ASM3I2669AF-06OR onsemi Description: IC FREQ MOD 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 13MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 6-TSOP
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ASM3P2107AF-08SR ASM3P2107AF-08SR onsemi ASM3P2107A.pdf Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 22MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ASM3P2108AF-08SR ASM3P2108AF-08SR onsemi Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 45MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ASM3P2180AF-08SR ASM3P2180AF-08SR onsemi ASM3P2180A.pdf Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 30MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.8V ~ 3.7V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ASM3P2182AF-08SR ASM3P2182AF-08SR onsemi ASM3P2182A.pdf Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 210MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: CMOS, TTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.7V ~ 3.7V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ASM3P2274AF-06OR ASM3P2274AF-06OR onsemi ASM3P2274A.pdf Description: IC FREQ MOD 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 120MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 6-TSOP
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ASM3P2474AF-06OR ASM3P2474AF-06OR onsemi Description: IC FREQ MOD 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 60MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 6-TSOP
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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NDD04N60Z-1G NDx04N60Z.pdf
NDD04N60Z-1G
Виробник: onsemi
Description: MOSFET N-CH 600V 4.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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NDD04N60ZT4G NDx04N60Z.pdf
NDD04N60ZT4G
Виробник: onsemi
Description: MOSFET N-CH 600V 4.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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NLSV1T34AMX1TCG nlsv1t34-d.pdf
NLSV1T34AMX1TCG
Виробник: onsemi
Description: IC TRANSLATOR UNIDIR 6ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 6-XFLGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 4.5V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 6-ULLGA (1.45x1)
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NLSV1T34DFT2G nlsv1t34-d.pdf
NLSV1T34DFT2G
Виробник: onsemi
Description: IC TRNSLTR UNIDIRECTIONAL SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 4.5V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+26.52 грн
6000+23.61 грн
9000+22.62 грн
15000+21.03 грн
Мінімальне замовлення: 3000
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NLSX3018DTR2G nlsx3018-d.pdf
NLSX3018DTR2G
Виробник: onsemi
Description: IC TRNSLTR BIDIRECTIONAL 20TSSOP
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NLSX3018DWR2G nlsx3018-d.pdf
NLSX3018DWR2G
Виробник: onsemi
Description: IC TRNSLTR BIDIRECTIONAL 20SOIC
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NLX1G332AMX1TCG nlx1g332-d.pdf
NLX1G332AMX1TCG
Виробник: onsemi
Description: IC GATE OR 1CH 3-INP 6ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-ULLGA (1.45x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NLX1G99AMX1TCG nlx1g99-d.pdf
NLX1G99AMX1TCG
Виробник: onsemi
Description: IC MINIGATE MULTIFUNC 8ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Output Type: Tri-State
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 4
Schmitt Trigger Input: Yes
Supplier Device Package: 8-ULLGA (1.95x1)
Number of Circuits: 1
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NLX1G99BMX1TCG nlx1g99-d.pdf
NLX1G99BMX1TCG
Виробник: onsemi
Description: IC MINIGATE MULTIFUNC 8ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Output Type: Tri-State
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 4
Schmitt Trigger Input: Yes
Supplier Device Package: 8-ULLGA (1.6x1)
Number of Circuits: 1
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NLX1G99CMX1TCG nlx1g99-d.pdf
NLX1G99CMX1TCG
Виробник: onsemi
Description: IC MINIGATE MULTIFUNC 8ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Output Type: Tri-State
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 4
Schmitt Trigger Input: Yes
Supplier Device Package: 8-ULLGA (1.45x1)
Number of Circuits: 1
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NSI50010YT1G nsi50010y-d.pdf
NSI50010YT1G
Виробник: onsemi
Description: IC CURRENT REGULATOR SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 50V
Current - Output: 10mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
на замовлення 23000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.89 грн
6000+10.42 грн
9000+9.90 грн
15000+8.74 грн
21000+8.41 грн
Мінімальне замовлення: 3000
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NTB6412ANG ntb6412an-d.pdf
NTB6412ANG
Виробник: onsemi
Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
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NTB6412ANT4G ntb6412an-d.pdf
NTB6412ANT4G
Виробник: onsemi
Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
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NTB6413ANT4G ntb6413an-d.pdf
NTB6413ANT4G
Виробник: onsemi
Description: MOSFET N-CH 100V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 42A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 31200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+74.36 грн
1600+66.48 грн
2400+65.39 грн
Мінімальне замовлення: 800
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NTD4910N-35G ntd4910n-d.pdf
NTD4910N-35G
Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A/37A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.37W (Ta), 27.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1203 pF @ 15 V
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NTD6414AN-1G ntd6414an-d.pdf
NTD6414AN-1G
Виробник: onsemi
Description: MOSFET N-CH 100V 32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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NTD6414ANT4G ntd6414an-d.pdf
NTD6414ANT4G
Виробник: onsemi
Description: MOSFET N-CH 100V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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NTD6415AN-1G ntd6415an-d.pdf
NTD6415AN-1G
Виробник: onsemi
Description: MOSFET N-CH 100V 23A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 23A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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NTD6415ANT4G ntd6415an-d.pdf
NTD6415ANT4G
Виробник: onsemi
Description: MOSFET N-CH 100V 23A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 23A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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NTD6416AN-1G ntd6416an-d.pdf
NTD6416AN-1G
Виробник: onsemi
Description: MOSFET N-CH 100V 17A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
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NTD6416ANL-1G ntd6416anl-d.pdf
NTD6416ANL-1G
Виробник: onsemi
Description: MOSFET N-CH 100V 19A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
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NTD6416ANLT4G ntd6416anl-d.pdf
NTD6416ANLT4G
Виробник: onsemi
Description: MOSFET N-CH 100V 19A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+37.27 грн
Мінімальне замовлення: 2500
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NTD6416ANT4G ntd6416an-d.pdf
NTD6416ANT4G
Виробник: onsemi
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+34.96 грн
5000+31.62 грн
Мінімальне замовлення: 2500
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NTMFS4852NT1G
NTMFS4852NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 16A/155A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 12 V
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NTMFS4921NT1G ntmfs4921n.pdf
NTMFS4921NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 8.8A/58.5A 5DFN
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NTMFS4921NT3G ntmfs4921n.pdf
NTMFS4921NT3G
Виробник: onsemi
Description: MOSFET N-CH 30V 8.8A/58.5A 5DFN
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NTMS4920NR2G ntms4920n-d.pdf
NTMS4920NR2G
Виробник: onsemi
Description: MOSFET N-CH 30V 10.6A 8SOIC
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NTP6411ANG ntb6411n-d.pdf
NTP6411ANG
Виробник: onsemi
Description: MOSFET N-CH 100V 77A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
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NTP6412ANG ntb6412an-d.pdf
NTP6412ANG
Виробник: onsemi
Description: MOSFET N-CH 100V 58A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
на замовлення 53 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+219.91 грн
50+105.19 грн
Мінімальне замовлення: 2
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NTTFS4800NTAG nttfs4800n-d.pdf
NTTFS4800NTAG
Виробник: onsemi
Description: MOSFET N-CH 30V 5A/32A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 964 pF @ 15 V
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NTTFS4840NTAG nttfs4840.pdf
NTTFS4840NTAG
Виробник: onsemi
Description: MOSFET N-CH 30V 4.6A/26A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
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NTTFS4932NTAG nttfs4932n-d.pdf
NTTFS4932NTAG
Виробник: onsemi
Description: MOSFET N-CH 30V 11A/79A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 15 V
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NTTFS4937NTAG nttfs4937n-d.pdf
NTTFS4937NTAG
Виробник: onsemi
Description: MOSFET N-CH 30V 11A/75A 8WDFN
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NTTFS4937NTWG nttfs4937n-d.pdf
NTTFS4937NTWG
Виробник: onsemi
Description: MOSFET N-CH 30V 11A/75A 8WDFN
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NTTFS4939NTAG nttfs4939n-d.pdf
NTTFS4939NTAG
Виробник: onsemi
Description: MOSFET N-CH 30V 8.9A/52A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 15 V
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NTTFS4939NTWG nttfs4939n-d.pdf
NTTFS4939NTWG
Виробник: onsemi
Description: MOSFET N-CH 30V 8.9A/52A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 15 V
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NTTFS4941NTAG nttfs4941n-d.pdf
NTTFS4941NTAG
Виробник: onsemi
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V
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NTTFS4941NTWG nttfs4941n-d.pdf
NTTFS4941NTWG
Виробник: onsemi
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
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NTTFS4943NTAG nttfs4943n-d.pdf
NTTFS4943NTAG
Виробник: onsemi
Description: MOSFET N-CH 30V 8A/41A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 22.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
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NTTFS4943NTWG nttfs4943n-d.pdf
NTTFS4943NTWG
Виробник: onsemi
Description: MOSFET N-CH 30V 8A/41A 8WDFN
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NTTFS4945NTAG nttfs4945n-d.pdf
NTTFS4945NTAG
Виробник: onsemi
Description: MOSFET N-CH 30V 7.1A/34A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 890mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V
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NTTFS4945NTWG nttfs4945n-d.pdf
NTTFS4945NTWG
Виробник: onsemi
Description: MOSFET N-CH 30V 7.1A/34A 8WDFN
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NCP3418DR2 ncp3418-d.pdf
NCP3418DR2
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.6V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 30 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
DigiKey Programmable: Not Verified
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FDPF8N50NZ FDP%28F%298N50NZ.pdf
FDPF8N50NZ
Виробник: onsemi
Description: MOSFET N-CH 500V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+152.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDP5N50NZ FAIRS46396-1.pdf?t.download=true&u=5oefqw
FDP5N50NZ
Виробник: onsemi
Description: MOSFET N-CH 500V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 3522 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+96.85 грн
10+76.53 грн
100+59.52 грн
500+47.34 грн
1000+38.57 грн
2000+36.31 грн
Мінімальне замовлення: 4
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FAN7930M
FAN7930M
Виробник: onsemi
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
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FDD86102 fdd86102-d.pdf
FDD86102
Виробник: onsemi
Description: MOSFET N-CH 100V 8A/36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
на замовлення 62500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+53.55 грн
5000+51.36 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FXMA108BQX fxma108-d.pdf
FXMA108BQX
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 20DQFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-DQFN (2.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+27.04 грн
6000+24.08 грн
9000+23.09 грн
15000+21.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDD86102 fdd86102-d.pdf
FDD86102
Виробник: onsemi
Description: MOSFET N-CH 100V 8A/36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
на замовлення 62546 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+158.78 грн
10+105.27 грн
100+73.45 грн
500+57.63 грн
1000+51.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FXMA108BQX fxma108-d.pdf
FXMA108BQX
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 20DQFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-DQFN (2.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 50436 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+105.59 грн
10+61.54 грн
25+51.56 грн
100+38.08 грн
250+33.16 грн
500+30.18 грн
1000+27.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
7WBD3306AMUTCG 7wbd3306-d.pdf
7WBD3306AMUTCG
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
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7WBD3306USG 7wbd3306-d.pdf
7WBD3306USG
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: US8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+19.74 грн
Мінімальне замовлення: 3000
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ADP3212AMNR2G adp3212a-d.pdf
ADP3212AMNR2G
Виробник: onsemi
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Up to 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
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ASM3I2669AF-06OR
ASM3I2669AF-06OR
Виробник: onsemi
Description: IC FREQ MOD 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 13MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 6-TSOP
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ASM3P2107AF-08SR ASM3P2107A.pdf
ASM3P2107AF-08SR
Виробник: onsemi
Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 22MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ASM3P2108AF-08SR
ASM3P2108AF-08SR
Виробник: onsemi
Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 45MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ASM3P2180AF-08SR ASM3P2180A.pdf
ASM3P2180AF-08SR
Виробник: onsemi
Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 30MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.8V ~ 3.7V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ASM3P2182AF-08SR ASM3P2182A.pdf
ASM3P2182AF-08SR
Виробник: onsemi
Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 210MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: CMOS, TTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.7V ~ 3.7V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ASM3P2274AF-06OR ASM3P2274A.pdf
ASM3P2274AF-06OR
Виробник: onsemi
Description: IC FREQ MOD 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 120MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 6-TSOP
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ASM3P2474AF-06OR
ASM3P2474AF-06OR
Виробник: onsemi
Description: IC FREQ MOD 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 60MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 6-TSOP
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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