| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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PZT651T1G | onsemi |
Description: TRANS NPN 60V 2A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Frequency - Transition: 75MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
на замовлення 11466 шт: термін постачання 21-31 дні (днів) |
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PZT751T1G | onsemi |
Description: TRANS PNP 60V 2A SOT223Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: SOT-223 (TO-261) Frequency - Transition: 75MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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PZTA42T1G | onsemi |
Description: TRANS NPN 300V 0.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.5 W |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SMS05T1G | onsemi |
Description: TVS DIODE 5VWM 15.5VC SC74Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 250pF @ 1MHz Current - Peak Pulse (10/1000µs): 23A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SC-74 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15.5V Power - Peak Pulse: 350W Power Line Protection: No |
на замовлення 5670 шт: термін постачання 21-31 дні (днів) |
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TCA0372DWR2G | onsemi |
Description: IC POWER 2 CIRCUIT 16SOICVoltage - Supply Span (Max): 40 V Voltage - Supply Span (Min): 5 V Current - Output / Channel: 1 A Number of Circuits: 2 Part Status: Active Supplier Device Package: 16-SOIC Voltage - Input Offset: 1 mV Current - Input Bias: 100 nA Gain Bandwidth Product: 1.4 MHz Slew Rate: 1.4V/µs Current - Supply: 5mA Operating Temperature: -40°C ~ 125°C Amplifier Type: Power Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
на замовлення 74268 шт: термін постачання 21-31 дні (днів) |
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ML2035IP | onsemi |
Description: IC OSC SINUSOIDAL PROG 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Frequency: Up to 25kHz Type: Oscillator, Sinusoidal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 8-DIP Current - Supply: 5.5 mA |
товару немає в наявності |
Мінімальне замовлення: 80 шт В кошику од. на суму грн. | ||||||||||||||||
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FOD617B | onsemi |
Description: OPTOISOLATOR 5KV TRANSISTOR 4DIPCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 4µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 125% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 63% @ 10mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FOD617C | onsemi |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 4µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube |
на замовлення 67 шт: термін постачання 21-31 дні (днів) |
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FOD617D | onsemi |
Description: OPTOISOLATOR 5KV TRANSISTOR 4DIPCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 4µs, 3µs Voltage - Output (Max): 70V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 320% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 160% @ 10mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FOD814A | onsemi |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 105°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 1mA Vce Saturation (Max): 200mV Current Transfer Ratio (Max): 150% @ 1mA Supplier Device Package: 4-DIP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 4µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 2410 шт: термін постачання 21-31 дні (днів) |
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CNY174M | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 160% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 320% @ 10mA Supplier Device Package: 6-DIP Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 270 шт: термін постачання 21-31 дні (днів) |
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CNY17F3M | onsemi |
Description: OPTOISO 4.17KV 1CH TRANS 6-DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 6-DIP Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 16029 шт: термін постачання 21-31 дні (днів) |
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FIN1027AMX | onsemi |
Description: IC TRANSCEIVER 2/0 8SOICSupplier Device Package: 8-SOIC Protocol: LVDS Data Rate: 600Mbps Number of Drivers/Receivers: 2/0 Operating Temperature: -40°C ~ 85°C Type: Driver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Voltage - Supply: 3V ~ 3.6V |
на замовлення 46343 шт: термін постачання 21-31 дні (днів) |
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FIN1028MX | onsemi |
Description: IC TRANSCEIVER 0/2 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Receiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 0/2 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: 8-SOIC |
на замовлення 5708 шт: термін постачання 21-31 дні (днів) |
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FIN1104MTCX | onsemi |
Description: IC REDRIVER LVDS 4CH 24TSSOPPackaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Delay Time: 1.75ns Number of Channels: 4 Mounting Type: Surface Mount Output: LVDS Type: Buffer, ReDriver Input: LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Applications: LVDS Current - Supply: 41mA Data Rate (Max): 800Mbps Supplier Device Package: 24-TSSOP Part Status: Active Capacitance - Input: 2.6 pF |
на замовлення 5046 шт: термін постачання 21-31 дні (днів) |
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74AC244SCX | onsemi |
Description: IC BUFF 2V/6V 20-SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-SOIC Part Status: Active |
на замовлення 1981 шт: термін постачання 21-31 дні (днів) |
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74VHC4316MX | onsemi |
Description: IC SWITCH SPST-NOX4 70OHM 16SOICSwitch Circuit: SPST - NO Crosstalk: -50dB @ 1MHz Voltage - Supply, Dual (V±): ±1V ~ 6V Voltage - Supply, Single (V+): 2V ~ 6V Supplier Device Package: 16-SOIC -3db Bandwidth: 100MHz On-State Resistance (Max): 70Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Number of Circuits: 4 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 50nA Switch Time (Ton, Toff) (Max): 30ns, 44ns Channel-to-Channel Matching (ΔRon): 5Ohm Multiplexer/Demultiplexer Circuit: 1:1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FIN1001M5X | onsemi |
Description: IC TRANSCEIVER 1/0 SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 1/0 Data Rate: 600Mbps Protocol: LVDS Supplier Device Package: SOT-23-5 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FIN1002M5X | onsemi |
Description: IC TRANSCEIVER 0/1 SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Receiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 0/1 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: SOT-23-5 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FIN1108MTDX | onsemi |
Description: IC REDRIVER LVDS 8CH 48TSSOPPackaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Delay Time: 1.75ns Number of Channels: 8 Mounting Type: Surface Mount Output: LVDS Type: Buffer, ReDriver Input: LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Applications: LVDS Current - Supply: 80mA (Max) Data Rate (Max): 800Mbps Supplier Device Package: 48-TSSOP Capacitance - Input: 3 pF |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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FIN1215MTDX | onsemi |
Description: IC SERIALIZER/DESERIAL 48TSSOPSupplier Device Package: 48-TSSOP Number of Inputs: 21 Input Type: LVTTL Data Rate: 1.785Gbps Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Function: Serializer Number of Outputs: 3 Mounting Type: Surface Mount Output Type: LVDS Package / Case: 48-TFSOP (0.240", 6.10mm Width) Packaging: Cut Tape (CT) |
на замовлення 735 шт: термін постачання 21-31 дні (днів) |
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| FIN24ACGFX | onsemi |
Description: IC SERIALIZER/DESERIAL 42-BGASupplier Device Package: 42-USS-BGA (3.5x4.5) Number of Inputs: 22/1 Input Type: LVCMOS Data Rate: 520Mbps Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -30°C ~ 70°C (TA) Function: Serializer/Deserializer Number of Outputs: 1/22 Mounting Type: Surface Mount Output Type: LVCMOS Package / Case: 42-VFBGA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FIN24CGFX | onsemi |
Description: IC SERIALIZER/DESERIAL 42-BGASupplier Device Package: 42-USS-BGA (3.5x4.5) Number of Inputs: 22/1 Input Type: LVCMOS Data Rate: 520Mbps Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -30°C ~ 70°C (TA) Function: Serializer/Deserializer Number of Outputs: 1/22 Mounting Type: Surface Mount Output Type: LVCMOS Package / Case: 42-VFBGA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FIN3385MTDX | onsemi |
Description: IC SERIALIZER/DESERIAL 56-TSSOPPart Status: Active Supplier Device Package: 56-TSSOP Number of Inputs: 28 Input Type: LVTTL Data Rate: 2.38Gbps Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Function: Serializer Number of Outputs: 4 Mounting Type: Surface Mount Output Type: LVDS Package / Case: 56-TFSOP (0.240", 6.10mm Width) Packaging: Cut Tape (CT) |
на замовлення 1038 шт: термін постачання 21-31 дні (днів) |
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FIN3386MTDX | onsemi |
Description: IC SERIALIZER/DESERIAL 56TSSOPSupplier Device Package: 56-TSSOP Number of Inputs: 4 Input Type: LVDS Data Rate: 2.38Gbps Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Function: Deserializer Number of Outputs: 28 Mounting Type: Surface Mount Output Type: LVTTL Package / Case: 56-TFSOP (0.240", 6.10mm Width) Packaging: Cut Tape (CT) |
на замовлення 4332 шт: термін постачання 21-31 дні (днів) |
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FOD852SD | onsemi |
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -30°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1.2V Current Transfer Ratio (Max): 15000% @ 1mA Supplier Device Package: 4-SMD Voltage - Output (Max): 300V Rise / Fall Time (Typ): 100µs, 20µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 66426 шт: термін постачання 21-31 дні (днів) |
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FOD2743BTV | onsemi |
Description: OPTOISOLTR 5KV 1CH TRANS 8-MDIPPackaging: Tube Package / Case: 8-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.07V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 100% @ 1mA Supplier Device Package: 8-MDIP Voltage - Output (Max): 70V Part Status: Active Number of Channels: 1 |
на замовлення 538 шт: термін постачання 21-31 дні (днів) |
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FCB11N60FTM | onsemi |
Description: MOSFET N-CH 600V 11A D2PAKPart Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCD5N60TF | onsemi |
Description: MOSFET N-CH 600V 4.6A DPAKInput Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCD5N60TM | onsemi |
Description: MOSFET N-CH 600V 4.6A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| FCD7N60TF | onsemi |
Description: MOSFET N-CH 600V 7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FCD7N60TM | onsemi |
Description: MOSFET N-CH 600V 7A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FDA69N25 | onsemi |
Description: MOSFET N-CH 250V 69A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 34.5A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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FDFMA3N109 | onsemi |
Description: MOSFET N-CH 30V 2.9A 6MICROFETInput Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.5W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMA1028NZ | onsemi |
Description: MOSFET 2N-CH 20V 3.7A 6MICROFETDrain to Source Voltage (Vdss): 20V Power - Max: 700mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Packaging: Tape & Reel (TR) Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.7A |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMA1029PZ | onsemi |
Description: MOSFET 2P-CH 20V 3.1A 6WDFNPart Status: Active Supplier Device Package: 6-WDFN (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.1A Drain to Source Voltage (Vdss): 20V Power - Max: 700mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
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FDMA1032CZ | onsemi |
Description: MOSFET N/P-CH 20V 3.7A 6MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FDMA2002NZ | onsemi |
Description: MOSFET 2N-CH 30V 2.9A 6MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 650mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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FDMC2523P | onsemi |
Description: MOSFET P-CH 150V 3A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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FDP33N25 | onsemi |
Description: MOSFET N-CH 250V 33A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 235W (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 3124 шт: термін постачання 21-31 дні (днів) |
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FDP3651U | onsemi |
Description: MOSFET N-CH 100V 80A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 5522 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5.5V @ 250µA Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 657 шт: термін постачання 21-31 дні (днів) |
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FDP65N06 | onsemi |
Description: MOSFET N-CH 60V 65A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDP75N08A | onsemi |
Description: MOSFET N-CH 75V 75A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 37.5A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDPF33N25T | onsemi |
Description: MOSFET N-CH 250V 33A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V |
на замовлення 4416 шт: термін постачання 21-31 дні (днів) |
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FDPF51N25 | onsemi |
Description: MOSFET N-CH 250V 51A TO220FInput Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 950 шт: термін постачання 21-31 дні (днів) |
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FDPF79N15 | onsemi |
Description: MOSFET N-CH 150V 79A TO220FInput Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 39.5A, 10V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDS4935BZ | onsemi |
Description: MOSFET 2P-CH 30V 6.9A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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FDZ191P | onsemi |
Description: MOSFET P-CH 20V 3A 6WLCSPInput Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Obsolete Supplier Device Package: 6-WLCSP (1x1.5) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FGA90N30TU | onsemi |
Description: IGBT 300V 90A 219W TO3PSupplier Device Package: TO-3P Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Power - Max: 219 W Current - Collector Pulsed (Icm): 220 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 90 A Gate Charge: 87 nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FHP3430IM14X | onsemi |
Description: IC OPAMP VFB 4 CIRCUIT 14SOICVoltage - Supply Span (Max): 12 V Voltage - Supply Span (Min): 2.7 V -3db Bandwidth: 170 MHz Current - Output / Channel: 100 mA Number of Circuits: 4 Part Status: Obsolete Supplier Device Package: 14-SOIC Voltage - Input Offset: 1 mV Current - Input Bias: 1.8 µA Gain Bandwidth Product: 60 MHz Slew Rate: 110V/µs Current - Supply: 2.5mA (x4 Channels) Operating Temperature: -40°C ~ 85°C Amplifier Type: Voltage Feedback Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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FMS6203MTC1400 | onsemi |
Description: IC VIDEO DRIVER 14TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FSCM0465RGWDTU | onsemi |
Description: IC OFFLINE SW FLBACK TO220F-6LPower (Watts): 70 W Part Status: Obsolete Voltage - Start Up: 12 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: TO-220F-6L (Forming) Voltage - Supply (Vcc/Vdd): 8V ~ 20V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 66kHz Duty Cycle: 80% Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: TO-220-6 Full Pack, Formed Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FSCM0465RIWDTU | onsemi |
Description: IC OFFLINE SWITCH FLYBACK I2PAKVoltage - Supply (Vcc/Vdd): 8V ~ 20V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 66kHz Duty Cycle: 80% Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: TO-262-6 Formed Leads Packaging: Tube Power (Watts): 70 W Part Status: Obsolete Voltage - Start Up: 12 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: I2-PAK-6 (Forming) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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FSCM0465RJ | onsemi |
Description: IC OFFLINE SW FLYBACK D2PAK-6Power (Watts): 55 W Part Status: Obsolete Voltage - Start Up: 12 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: D2PAK-6 Voltage - Supply (Vcc/Vdd): 8V ~ 20V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 66kHz Duty Cycle: 80% Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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FSDH0265RLX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8LSOPPower (Watts): 27 W Part Status: Obsolete Voltage - Start Up: 12 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: 8-LSOP Voltage - Supply (Vcc/Vdd): 8V ~ 20V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 77% Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HGT1S20N60A4S9A | onsemi |
Description: IGBT 600V 70A TO-263Power - Max: 290 W Current - Collector Pulsed (Icm): 280 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 70 A Part Status: Obsolete Gate Charge: 142 nC Test Condition: 390V, 20A, 3Ohm, 15V Switching Energy: 105µJ (on), 150µJ (off) Td (on/off) @ 25°C: 15ns/73ns Supplier Device Package: TO-263 (D2Pak) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR20S100CTTU | onsemi |
Description: DIODE ARR SCHOT 100V 20A TO2203Package / Case: TO-220-3 Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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FCB11N60FTM | onsemi |
Description: MOSFET N-CH 600V 11A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCD5N60TF | onsemi |
Description: MOSFET N-CH 600V 4.6A DPAKInput Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMA1028NZ | onsemi |
Description: MOSFET 2N-CH 20V 3.7A 6MICROFETSupplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.7A Drain to Source Voltage (Vdss): 20V Power - Max: 700mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3920 шт: термін постачання 21-31 дні (днів) |
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| PZT651T1G |
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Виробник: onsemi
Description: TRANS NPN 60V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 11466 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.65 грн |
| 10+ | 33.36 грн |
| 100+ | 21.63 грн |
| 500+ | 15.54 грн |
| PZT751T1G |
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Виробник: onsemi
Description: TRANS PNP 60V 2A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 60V 2A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.68 грн |
| 12+ | 26.49 грн |
| PZTA42T1G |
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Виробник: onsemi
Description: TRANS NPN 300V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
Description: TRANS NPN 300V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.33 грн |
| 12+ | 25.21 грн |
| 100+ | 16.10 грн |
| 500+ | 11.40 грн |
| SMS05T1G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 15.5VC SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 250pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15.5V
Power - Peak Pulse: 350W
Power Line Protection: No
Description: TVS DIODE 5VWM 15.5VC SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 250pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15.5V
Power - Peak Pulse: 350W
Power Line Protection: No
на замовлення 5670 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 14+ | 22.34 грн |
| 100+ | 15.81 грн |
| 500+ | 11.22 грн |
| 1000+ | 10.05 грн |
| TCA0372DWR2G |
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Виробник: onsemi
Description: IC POWER 2 CIRCUIT 16SOIC
Voltage - Supply Span (Max): 40 V
Voltage - Supply Span (Min): 5 V
Current - Output / Channel: 1 A
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 16-SOIC
Voltage - Input Offset: 1 mV
Current - Input Bias: 100 nA
Gain Bandwidth Product: 1.4 MHz
Slew Rate: 1.4V/µs
Current - Supply: 5mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Power
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: IC POWER 2 CIRCUIT 16SOIC
Voltage - Supply Span (Max): 40 V
Voltage - Supply Span (Min): 5 V
Current - Output / Channel: 1 A
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 16-SOIC
Voltage - Input Offset: 1 mV
Current - Input Bias: 100 nA
Gain Bandwidth Product: 1.4 MHz
Slew Rate: 1.4V/µs
Current - Supply: 5mA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Power
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
на замовлення 74268 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.39 грн |
| 10+ | 118.35 грн |
| 25+ | 100.45 грн |
| 100+ | 75.21 грн |
| 250+ | 65.86 грн |
| 500+ | 60.11 грн |
| ML2035IP |
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Виробник: onsemi
Description: IC OSC SINUSOIDAL PROG 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: Up to 25kHz
Type: Oscillator, Sinusoidal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 8-DIP
Current - Supply: 5.5 mA
Description: IC OSC SINUSOIDAL PROG 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: Up to 25kHz
Type: Oscillator, Sinusoidal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 8-DIP
Current - Supply: 5.5 mA
товару немає в наявності
Мінімальне замовлення: 80 шт
В кошику
од. на суму грн.
| FOD617B |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| FOD617C |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
на замовлення 67 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.84 грн |
| 10+ | 44.15 грн |
| FOD617D |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| FOD814A |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 2410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.19 грн |
| 12+ | 26.04 грн |
| 100+ | 18.77 грн |
| 500+ | 14.56 грн |
| 1000+ | 13.55 грн |
| 2000+ | 12.70 грн |
| CNY174M |
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Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 160% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 320% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 160% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 320% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.46 грн |
| 10+ | 30.42 грн |
| 100+ | 22.09 грн |
| CNY17F3M |
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Виробник: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 16029 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.46 грн |
| 10+ | 30.27 грн |
| 100+ | 21.93 грн |
| 500+ | 17.09 грн |
| 1000+ | 15.94 грн |
| 2000+ | 14.97 грн |
| 5000+ | 13.68 грн |
| 10000+ | 13.02 грн |
| FIN1027AMX |
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Виробник: onsemi
Description: IC TRANSCEIVER 2/0 8SOIC
Supplier Device Package: 8-SOIC
Protocol: LVDS
Data Rate: 600Mbps
Number of Drivers/Receivers: 2/0
Operating Temperature: -40°C ~ 85°C
Type: Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply: 3V ~ 3.6V
Description: IC TRANSCEIVER 2/0 8SOIC
Supplier Device Package: 8-SOIC
Protocol: LVDS
Data Rate: 600Mbps
Number of Drivers/Receivers: 2/0
Operating Temperature: -40°C ~ 85°C
Type: Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply: 3V ~ 3.6V
на замовлення 46343 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.16 грн |
| 10+ | 34.42 грн |
| 25+ | 30.92 грн |
| 100+ | 25.44 грн |
| 250+ | 23.72 грн |
| 500+ | 22.68 грн |
| 1000+ | 21.47 грн |
| FIN1028MX |
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Виробник: onsemi
Description: IC TRANSCEIVER 0/2 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/2
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
Description: IC TRANSCEIVER 0/2 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/2
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 8-SOIC
на замовлення 5708 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.25 грн |
| 10+ | 52.31 грн |
| 25+ | 47.22 грн |
| 100+ | 39.11 грн |
| 250+ | 36.62 грн |
| 500+ | 35.11 грн |
| 1000+ | 33.69 грн |
| FIN1104MTCX |
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Виробник: onsemi
Description: IC REDRIVER LVDS 4CH 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Delay Time: 1.75ns
Number of Channels: 4
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 41mA
Data Rate (Max): 800Mbps
Supplier Device Package: 24-TSSOP
Part Status: Active
Capacitance - Input: 2.6 pF
Description: IC REDRIVER LVDS 4CH 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Delay Time: 1.75ns
Number of Channels: 4
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 41mA
Data Rate (Max): 800Mbps
Supplier Device Package: 24-TSSOP
Part Status: Active
Capacitance - Input: 2.6 pF
на замовлення 5046 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.22 грн |
| 10+ | 145.30 грн |
| 25+ | 132.96 грн |
| 100+ | 112.11 грн |
| 250+ | 106.05 грн |
| 500+ | 104.04 грн |
| 74AC244SCX |
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Виробник: onsemi
Description: IC BUFF 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC BUFF 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 1981 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.89 грн |
| 10+ | 50.50 грн |
| 25+ | 45.56 грн |
| 100+ | 37.71 грн |
| 250+ | 35.30 грн |
| 500+ | 34.00 грн |
| 74VHC4316MX |
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Виробник: onsemi
Description: IC SWITCH SPST-NOX4 70OHM 16SOIC
Switch Circuit: SPST - NO
Crosstalk: -50dB @ 1MHz
Voltage - Supply, Dual (V±): ±1V ~ 6V
Voltage - Supply, Single (V+): 2V ~ 6V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 100MHz
On-State Resistance (Max): 70Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 50nA
Switch Time (Ton, Toff) (Max): 30ns, 44ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Description: IC SWITCH SPST-NOX4 70OHM 16SOIC
Switch Circuit: SPST - NO
Crosstalk: -50dB @ 1MHz
Voltage - Supply, Dual (V±): ±1V ~ 6V
Voltage - Supply, Single (V+): 2V ~ 6V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 100MHz
On-State Resistance (Max): 70Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 50nA
Switch Time (Ton, Toff) (Max): 30ns, 44ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
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| FIN1001M5X |
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Виробник: onsemi
Description: IC TRANSCEIVER 1/0 SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/0
Data Rate: 600Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
Description: IC TRANSCEIVER 1/0 SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/0
Data Rate: 600Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.95 грн |
| 10+ | 55.70 грн |
| 25+ | 50.33 грн |
| 100+ | 41.74 грн |
| 250+ | 39.10 грн |
| 500+ | 37.51 грн |
| 1000+ | 36.09 грн |
| FIN1002M5X |
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Виробник: onsemi
Description: IC TRANSCEIVER 0/1 SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
Description: IC TRANSCEIVER 0/1 SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.60 грн |
| 10+ | 33.14 грн |
| 25+ | 29.74 грн |
| 100+ | 24.40 грн |
| 250+ | 22.73 грн |
| 500+ | 21.72 грн |
| 1000+ | 20.55 грн |
| FIN1108MTDX |
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Виробник: onsemi
Description: IC REDRIVER LVDS 8CH 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Delay Time: 1.75ns
Number of Channels: 8
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 80mA (Max)
Data Rate (Max): 800Mbps
Supplier Device Package: 48-TSSOP
Capacitance - Input: 3 pF
Description: IC REDRIVER LVDS 8CH 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Delay Time: 1.75ns
Number of Channels: 8
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 80mA (Max)
Data Rate (Max): 800Mbps
Supplier Device Package: 48-TSSOP
Capacitance - Input: 3 pF
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 329.20 грн |
| 10+ | 240.78 грн |
| 25+ | 221.79 грн |
| 100+ | 188.52 грн |
| 250+ | 179.41 грн |
| FIN1215MTDX |
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Виробник: onsemi
Description: IC SERIALIZER/DESERIAL 48TSSOP
Supplier Device Package: 48-TSSOP
Number of Inputs: 21
Input Type: LVTTL
Data Rate: 1.785Gbps
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Serializer
Number of Outputs: 3
Mounting Type: Surface Mount
Output Type: LVDS
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Cut Tape (CT)
Description: IC SERIALIZER/DESERIAL 48TSSOP
Supplier Device Package: 48-TSSOP
Number of Inputs: 21
Input Type: LVTTL
Data Rate: 1.785Gbps
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Serializer
Number of Outputs: 3
Mounting Type: Surface Mount
Output Type: LVDS
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Cut Tape (CT)
на замовлення 735 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 319.80 грн |
| 10+ | 276.33 грн |
| 25+ | 261.28 грн |
| 100+ | 201.61 грн |
| 250+ | 180.91 грн |
| 500+ | 174.37 грн |
| FIN24ACGFX |
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Виробник: onsemi
Description: IC SERIALIZER/DESERIAL 42-BGA
Supplier Device Package: 42-USS-BGA (3.5x4.5)
Number of Inputs: 22/1
Input Type: LVCMOS
Data Rate: 520Mbps
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -30°C ~ 70°C (TA)
Function: Serializer/Deserializer
Number of Outputs: 1/22
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 42-VFBGA
Packaging: Cut Tape (CT)
Description: IC SERIALIZER/DESERIAL 42-BGA
Supplier Device Package: 42-USS-BGA (3.5x4.5)
Number of Inputs: 22/1
Input Type: LVCMOS
Data Rate: 520Mbps
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -30°C ~ 70°C (TA)
Function: Serializer/Deserializer
Number of Outputs: 1/22
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 42-VFBGA
Packaging: Cut Tape (CT)
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| FIN24CGFX |
![]() |
Виробник: onsemi
Description: IC SERIALIZER/DESERIAL 42-BGA
Supplier Device Package: 42-USS-BGA (3.5x4.5)
Number of Inputs: 22/1
Input Type: LVCMOS
Data Rate: 520Mbps
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -30°C ~ 70°C (TA)
Function: Serializer/Deserializer
Number of Outputs: 1/22
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 42-VFBGA
Packaging: Cut Tape (CT)
Description: IC SERIALIZER/DESERIAL 42-BGA
Supplier Device Package: 42-USS-BGA (3.5x4.5)
Number of Inputs: 22/1
Input Type: LVCMOS
Data Rate: 520Mbps
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -30°C ~ 70°C (TA)
Function: Serializer/Deserializer
Number of Outputs: 1/22
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 42-VFBGA
Packaging: Cut Tape (CT)
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| FIN3385MTDX |
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Виробник: onsemi
Description: IC SERIALIZER/DESERIAL 56-TSSOP
Part Status: Active
Supplier Device Package: 56-TSSOP
Number of Inputs: 28
Input Type: LVTTL
Data Rate: 2.38Gbps
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Serializer
Number of Outputs: 4
Mounting Type: Surface Mount
Output Type: LVDS
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Packaging: Cut Tape (CT)
Description: IC SERIALIZER/DESERIAL 56-TSSOP
Part Status: Active
Supplier Device Package: 56-TSSOP
Number of Inputs: 28
Input Type: LVTTL
Data Rate: 2.38Gbps
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Serializer
Number of Outputs: 4
Mounting Type: Surface Mount
Output Type: LVDS
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Packaging: Cut Tape (CT)
на замовлення 1038 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 366.83 грн |
| 10+ | 269.76 грн |
| 25+ | 248.93 грн |
| 100+ | 212.15 грн |
| 250+ | 201.92 грн |
| 500+ | 195.75 грн |
| FIN3386MTDX |
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Виробник: onsemi
Description: IC SERIALIZER/DESERIAL 56TSSOP
Supplier Device Package: 56-TSSOP
Number of Inputs: 4
Input Type: LVDS
Data Rate: 2.38Gbps
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Deserializer
Number of Outputs: 28
Mounting Type: Surface Mount
Output Type: LVTTL
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Packaging: Cut Tape (CT)
Description: IC SERIALIZER/DESERIAL 56TSSOP
Supplier Device Package: 56-TSSOP
Number of Inputs: 4
Input Type: LVDS
Data Rate: 2.38Gbps
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Deserializer
Number of Outputs: 28
Mounting Type: Surface Mount
Output Type: LVTTL
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Packaging: Cut Tape (CT)
на замовлення 4332 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 351.93 грн |
| 10+ | 257.83 грн |
| 25+ | 237.67 грн |
| 100+ | 202.23 грн |
| 250+ | 193.05 грн |
| FOD852SD |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 66426 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.95 грн |
| 10+ | 54.19 грн |
| 100+ | 40.14 грн |
| 500+ | 31.80 грн |
| FOD2743BTV |
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Виробник: onsemi
Description: OPTOISOLTR 5KV 1CH TRANS 8-MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 100% @ 1mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 70V
Part Status: Active
Number of Channels: 1
Description: OPTOISOLTR 5KV 1CH TRANS 8-MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 100% @ 1mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 70V
Part Status: Active
Number of Channels: 1
на замовлення 538 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.28 грн |
| 10+ | 104.46 грн |
| 100+ | 79.86 грн |
| 500+ | 64.76 грн |
| FCB11N60FTM |
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Виробник: onsemi
Description: MOSFET N-CH 600V 11A D2PAK
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 600V 11A D2PAK
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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| FCD5N60TF |
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Виробник: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 4.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FCD5N60TM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 54.68 грн |
| FCD7N60TF |
Виробник: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FCD7N60TM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 71.48 грн |
| FDA69N25 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 250V 69A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 34.5A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Description: MOSFET N-CH 250V 69A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 34.5A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 416.99 грн |
| 30+ | 228.55 грн |
| 60+ | 207.89 грн |
| 120+ | 178.78 грн |
| 510+ | 153.64 грн |
| FDFMA3N109 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 2.9A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 2.9A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| FDMA1028NZ |
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Виробник: onsemi
Description: MOSFET 2N-CH 20V 3.7A 6MICROFET
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Description: MOSFET 2N-CH 20V 3.7A 6MICROFET
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.43 грн |
| FDMA1029PZ |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 3.1A 6WDFN
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 3.1A 6WDFN
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.71 грн |
| 6000+ | 13.93 грн |
| 9000+ | 13.32 грн |
| 15000+ | 11.85 грн |
| 21000+ | 11.47 грн |
| FDMA1032CZ |
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Виробник: onsemi
Description: MOSFET N/P-CH 20V 3.7A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Description: MOSFET N/P-CH 20V 3.7A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDMA2002NZ |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 2.9A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Description: MOSFET 2N-CH 30V 2.9A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.35 грн |
| 6000+ | 18.12 грн |
| FDMC2523P |
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Виробник: onsemi
Description: MOSFET P-CH 150V 3A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: MOSFET P-CH 150V 3A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 45.63 грн |
| 6000+ | 42.75 грн |
| FDP33N25 |
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Виробник: onsemi
Description: MOSFET N-CH 250V 33A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 235W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 250V 33A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 235W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 3124 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.66 грн |
| 10+ | 125.67 грн |
| 50+ | 96.31 грн |
| 100+ | 81.52 грн |
| 500+ | 65.96 грн |
| FDP3651U |
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Виробник: onsemi
Description: MOSFET N-CH 100V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5522 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5522 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 657 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.95 грн |
| 50+ | 108.09 грн |
| 100+ | 97.53 грн |
| 500+ | 74.13 грн |
| FDP65N06 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 65A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Description: MOSFET N-CH 60V 65A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32.5A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FDP75N08A |
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Виробник: onsemi
Description: MOSFET N-CH 75V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37.5A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 25 V
Description: MOSFET N-CH 75V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37.5A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 25 V
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В кошику
од. на суму грн.
| FDPF33N25T |
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Виробник: onsemi
Description: MOSFET N-CH 250V 33A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
Description: MOSFET N-CH 250V 33A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
на замовлення 4416 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.09 грн |
| 10+ | 143.48 грн |
| 50+ | 110.58 грн |
| 100+ | 93.81 грн |
| 500+ | 76.35 грн |
| FDPF51N25 |
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Виробник: onsemi
Description: MOSFET N-CH 250V 51A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 250V 51A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.39 грн |
| 50+ | 107.38 грн |
| 100+ | 96.94 грн |
| 500+ | 73.78 грн |
| FDPF79N15 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 79A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 39.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 150V 79A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 39.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| FDS4935BZ |
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Виробник: onsemi
Description: MOSFET 2P-CH 30V 6.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 30V 6.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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| FDZ191P |
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Виробник: onsemi
Description: MOSFET P-CH 20V 3A 6WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-WLCSP (1x1.5)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 3A 6WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-WLCSP (1x1.5)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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| FGA90N30TU |
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Виробник: onsemi
Description: IGBT 300V 90A 219W TO3P
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 219 W
Current - Collector Pulsed (Icm): 220 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 90 A
Gate Charge: 87 nC
Description: IGBT 300V 90A 219W TO3P
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 219 W
Current - Collector Pulsed (Icm): 220 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 90 A
Gate Charge: 87 nC
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| FHP3430IM14X |
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Виробник: onsemi
Description: IC OPAMP VFB 4 CIRCUIT 14SOIC
Voltage - Supply Span (Max): 12 V
Voltage - Supply Span (Min): 2.7 V
-3db Bandwidth: 170 MHz
Current - Output / Channel: 100 mA
Number of Circuits: 4
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 1 mV
Current - Input Bias: 1.8 µA
Gain Bandwidth Product: 60 MHz
Slew Rate: 110V/µs
Current - Supply: 2.5mA (x4 Channels)
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Voltage Feedback
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OPAMP VFB 4 CIRCUIT 14SOIC
Voltage - Supply Span (Max): 12 V
Voltage - Supply Span (Min): 2.7 V
-3db Bandwidth: 170 MHz
Current - Output / Channel: 100 mA
Number of Circuits: 4
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Voltage - Input Offset: 1 mV
Current - Input Bias: 1.8 µA
Gain Bandwidth Product: 60 MHz
Slew Rate: 110V/µs
Current - Supply: 2.5mA (x4 Channels)
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Voltage Feedback
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| FMS6203MTC1400 |
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Виробник: onsemi
Description: IC VIDEO DRIVER 14TSSOP
Description: IC VIDEO DRIVER 14TSSOP
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| FSCM0465RGWDTU |
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Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 70 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-6L (Forming)
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 66kHz
Duty Cycle: 80%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 70 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-6L (Forming)
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 66kHz
Duty Cycle: 80%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
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| FSCM0465RIWDTU |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK I2PAK
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 66kHz
Duty Cycle: 80%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-262-6 Formed Leads
Packaging: Tube
Power (Watts): 70 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: I2-PAK-6 (Forming)
Description: IC OFFLINE SWITCH FLYBACK I2PAK
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 66kHz
Duty Cycle: 80%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-262-6 Formed Leads
Packaging: Tube
Power (Watts): 70 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: I2-PAK-6 (Forming)
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Мінімальне замовлення: 1000 шт
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| FSCM0465RJ |
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Виробник: onsemi
Description: IC OFFLINE SW FLYBACK D2PAK-6
Power (Watts): 55 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: D2PAK-6
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 66kHz
Duty Cycle: 80%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
Description: IC OFFLINE SW FLYBACK D2PAK-6
Power (Watts): 55 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: D2PAK-6
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 66kHz
Duty Cycle: 80%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
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Мінімальне замовлення: 1000 шт
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| FSDH0265RLX |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Power (Watts): 27 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-LSOP
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 77%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Power (Watts): 27 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-LSOP
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 77%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
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| HGT1S20N60A4S9A |
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Виробник: onsemi
Description: IGBT 600V 70A TO-263
Power - Max: 290 W
Current - Collector Pulsed (Icm): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Part Status: Obsolete
Gate Charge: 142 nC
Test Condition: 390V, 20A, 3Ohm, 15V
Switching Energy: 105µJ (on), 150µJ (off)
Td (on/off) @ 25°C: 15ns/73ns
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: IGBT 600V 70A TO-263
Power - Max: 290 W
Current - Collector Pulsed (Icm): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Part Status: Obsolete
Gate Charge: 142 nC
Test Condition: 390V, 20A, 3Ohm, 15V
Switching Energy: 105µJ (on), 150µJ (off)
Td (on/off) @ 25°C: 15ns/73ns
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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| MBR20S100CTTU |
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Виробник: onsemi
Description: DIODE ARR SCHOT 100V 20A TO2203
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Description: DIODE ARR SCHOT 100V 20A TO2203
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
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Мінімальне замовлення: 1000 шт
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| FCB11N60FTM |
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Виробник: onsemi
Description: MOSFET N-CH 600V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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| FCD5N60TF |
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Виробник: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 4.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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| FDMA1028NZ |
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Виробник: onsemi
Description: MOSFET 2N-CH 20V 3.7A 6MICROFET
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 3.7A 6MICROFET
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.49 грн |
| 10+ | 38.12 грн |
| 100+ | 24.80 грн |
| 500+ | 17.89 грн |
| 1000+ | 16.15 грн |






























